CN201383492Y - Microwave excitation small-sized plasma etching device - Google Patents
Microwave excitation small-sized plasma etching device Download PDFInfo
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- CN201383492Y CN201383492Y CN200920118415U CN200920118415U CN201383492Y CN 201383492 Y CN201383492 Y CN 201383492Y CN 200920118415 U CN200920118415 U CN 200920118415U CN 200920118415 U CN200920118415 U CN 200920118415U CN 201383492 Y CN201383492 Y CN 201383492Y
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model discloses a microwave excitation small-sized plasma etching device which comprises a main device and peripheral devices, wherein the main device mainly consists of a microwave system and a reaction device, the microwave system comprises a microwave chamber, a microwave source and a microwave control circuit, the reaction device is arranged in the microwave chamber, and consists of a reaction chamber and a quartz cover, and a base support, a sample stage and a constraint device are arranged in the reaction chamber, a central exhaust component is arranged on the lower portion of the base support, the sample stage is connected with a high-frequency bias power supply, a water-cooling groove is arranged in the sample stage, and an air flow circular scatterer is arranged on the top of the reaction chamber. By adopting the microwave excitation mode, the electrode contamination is avoided, and higher plasma density and larger pressure intensity working range can be generated, as the microwave leakage is easy to control and prevent, the safety performance is excellent, and the etching device and the high-frequency bias power supply can separately regulate and control the density and bombarding energy of plasma, thereby well controlling the etching speed and etching depth of the plasma.
Description
Technical field
The utility model relates to the etching device in a kind of semiconductor components and devices and the opto-electronic device processing, especially relates to a kind of microwave excited small-sized plasma etching apparatus.
Background technology
Plasma etching apparatus mainly utilizes plasma that the physics and the chemical reaction of opto-electronic device to be etched or semiconductor components and devices etc. are worked.At present, popular plasma etching apparatus mainly contains capacitance coupling type (CCP) plasma etching machine and inductive coupling type (ICP) plasma etching machine two macrospecies on the market.The capacitance coupling type plasma etching machine can produce bigbore plasma, and cost is lower, but have the electrode fouling problem, and operating pressure compares higherly, and plasma density is lower, is not suitable for high density plasma etch; On the other hand, high-frequency discharge power supply and high frequency bias power supply in the capacitance coupling type plasma etching machine act on plasma simultaneously, so the very difficult separate regulation of control of the particle energy of sample to be etched is controlled and bombarded to the concentration of article on plasma body.Inductive coupling type plasma etching function produces high-density plasma, the particle energy of density that can the separate regulation plasma and bombardment sample to be etched, and pressure working range with broad, therefore be widely used, but inductive coupling type plasma etching machine also has deficiency, as needs fixed inductance coil on the reative cell top cover, in order to shield the electrode fouling of generation, the volume that adds radome is bigger; Some of them inductive coupling type plasma etching machine has observation window at sidewall, but can influence the symmetry of plasma distribution; Also have the checkout gear of inductive coupling type plasma etching machine by built-in complexity to wait in addition and monitor etching process, though the symmetry of plasma distribution is guaranteed, price is higher.
Summary of the invention
It is big that technical problem to be solved in the utility model provides a kind of operating pressure scope, can be than producing the higher density plasma under the low pressure, electrodeless pollution and plasma distribution symmetrically with microwave excited plasma etching apparatus.
The utility model solves the problems of the technologies described above the technical scheme that is adopted: a kind of microwave excited small-sized plasma etching apparatus, comprise main equipment and ancillary equipment, described ancillary equipment is mainly by gas supply device, water supply installation and vacuum plant are formed, described gas supply device, described water supply installation is connected with described main equipment respectively with described vacuum plant, described main equipment mainly is made up of microwave system and reaction unit, described microwave system comprises microwave office, the microwave control circuit that is arranged at the microwave source in the described microwave office and is electrically connected with described microwave source, described reaction unit is arranged in the described microwave office, described reaction unit comprises reative cell and the quartz cover that is complementary with described reative cell, be provided with base support in the described reative cell, sample stage and restraint device, the bottom of described base support is provided with central exhaust component, described central exhaust component is connected with described vacuum plant by blast pipe, described sample stage insulation is connected on the described base support, described sample stage is connected with the high frequency bias power supply that is used to regulate and control bias voltage, be provided with water-cooling groove in the described sample stage, described water-cooling groove is connected with described water supply installation with drainage pipe by water inlet pipe, the top of described reative cell is provided with inlet air flow annular disperser, described inlet air flow annular disperser is connected with described gas supply device by admission line and air inlet pipe, described inlet air flow annular disperser is connected described quartz cover with described restraint device, space between described sample stage and the described restraint device forms reaction chamber.
Described microwave office comprise microwave office's cavity and with the movable microwave chamber door that cooperates of described microwave office cavity, described microwave source be arranged at described microwave office cavity directly over, described microwave chamber door is provided with the watch window that is used to observe etching sample process, and the micro-wave screening net is housed on the described watch window.
Described quartz cover is circular-arc, is provided with sealing device between described quartz cover and the described reative cell.
Described sealing device comprises the annular seal groove and the sealing cell wall that is arranged on the described annular seal groove on the top that is arranged at described reative cell, be provided with sealing rubber ring in the described annular seal groove, described quartz cover is provided with the quartz cover handle, offers the opening of being convenient to pick and place described quartz cover on the described sealing cell wall.
Described central exhaust component comprises main exhaust and is distributed in branched discharge pipe around the described main exhaust, and described main exhaust is communicated with described branched discharge pipe, and described main exhaust passes through described blast pipe and is connected with described vacuum plant.
Be provided with seal between described base support and the described sample stage.
The material that described restraint device adopts is the material with good electrical conductivity and thermal conductivity, described restraint device comprises constraint wall and constraint base ring, described constraint base ring is arranged at the bottom of described constraint wall, the thickness of described constraint base ring is greater than 8mm, annular is evenly distributed with and is used to control the flow velocity of air-flow and the air vent hole of distribution on the described constraint base ring, the upper surface of described constraint base ring a little more than or etc. be higher than the loading surface of described sample stage, be provided with insulated ring between described constraint base ring and the described sample stage, the top of described constraint wall is connected with described inlet air flow annular disperser.
Described admission line is arranged in the described reative cell and runs through the bottom of described reative cell, described admission line is communicated with described air inlet pipe, described inlet air flow annular disperser is provided with annular gas and disperses the chamber, described annular gas disperses the chamber to be communicated with described admission line, be evenly distributed with the gas dispersion aperture on the described inlet air flow annular disperser, described gas dispersion aperture disperses the chamber to be communicated with described annular gas, and the slope of described gas dispersion aperture and the radian of described quartz cover are complementary.
In the described gas dispersion aperture sleeve pipe is installed, is provided with the airflow hole that runs through described sleeve pipe in the described sleeve pipe, described gas dispersion aperture is communicated with described airflow hole.
Described water inlet pipe comprises into water metal tube and water supply hose, described drainage pipe comprises draining metal tube and scupper hose, described water inlet metal tube and described draining metal tube all are arranged in the described water-cooling groove and run through the bottom of described water-cooling groove, one end of described water inlet metal tube passes described base support and described central exhaust component is communicated with described water supply hose, one end of described draining metal tube passes described base support and described central exhaust component is communicated with described scupper hose, described water supply hose is connected with described water supply installation respectively with described scupper hose, described water inlet metal tube is positioned at the cell wall of the crooked and described mouth of pipe of the mouth of pipe of an end of described water-cooling groove towards described water-cooling groove, the position of the mouth of pipe of described water inlet metal tube is near the bottom of described water-cooling groove, and described draining metal tube is positioned at the top of the close described water-cooling groove in position of the mouth of pipe of an end of described water-cooling groove.
Compared with prior art, advantage of the present utility model is: 1. by adopting microwave excited mode, avoided electrode fouling, and can produce higher plasma density, and bigger pressure working range arranged, owing to the microwave technology comparative maturity, therefore more easy to control the and protection of microwave leakage has good safety performance simultaneously; The density and the bombarding energy of it and the discrete regulation and control plasma of high frequency bias power supply are with the etch rate and the etching depth of better control plasma.2. microwave source is located at the top of microwave office, the symmetry that has guaranteed the electric field of discharge usefulness distributes, designed the inlet air flow annular disperser that is used for symmetrical dispersed gas body and function in addition, the air vent hole of gas stream symmetrically and evenly, reach the central exhaust component that symmetrical exhaust is used, the plasma that makes this device generate has good symmetry, again because gas stream does not have obstruction in flowing, be furnished with the sleeve pipe of regulating plasma distribution simultaneously, therefore the air-flow above sample stage distributes and has good homogeneous.So just make etch rate have good homogeneous.3. adopt circular-arc large tracts of land quartz cover, strengthened coupling efficiency, made things convenient for observation simultaneously reaction chamber internal reaction situation.4. gather multiple dismantled and assembled structure, made things convenient for the maintenance and the cleaning of reaction cavity, the useful life of having improved complete machine, simultaneously can be by changing its scopes of application of expansion such as parts such as sample stage.5. the cost performance height utilizes etching device of the present utility model can carry out the basic research and the education experiment of plasma technique, helps the promotion and application of China's plasma technique.
Description of drawings
Fig. 1 is an overall structure block diagram of the present utility model;
Fig. 2 is the cutaway view of main equipment of the present utility model;
Fig. 3 is the simple structure schematic diagram of microwave office of the present utility model;
Fig. 4 is the vertical view of quartz cover of the present utility model;
Fig. 5 is the structural representation of sealing device of the present utility model (not establishing sealing rubber ring);
Fig. 6 a is the vertical view of sample stage of the present utility model;
Fig. 6 b is that A-A among Fig. 6 a is to cutaway view;
Fig. 7 a is the vertical view of base support of the present utility model;
Fig. 7 b is the transverse sectional view of Fig. 7 a;
Fig. 8 a is the vertical view of the constraint base ring of wherein a kind of structure of the present utility model;
Fig. 8 b is the vertical view of the constraint base ring of another kind of structure of the present utility model;
Fig. 9 is the part-structure cutaway view of inlet air flow annular disperser of the present utility model.
Embodiment
Embodiment describes in further detail the utility model below in conjunction with accompanying drawing.
As shown in Figure 1, a kind of microwave excited small-sized plasma etching apparatus comprises main equipment 101 and ancillary equipment.Ancillary equipment mainly is made up of gas supply device 102, water supply installation 106 and vacuum plant 107, and vacuum plant 107 comprises vacuum meter 104 and vacuum pump 105.Gas supply device 102 is used to supply etching reaction gas, be connected with air inlet pipe 110 between gas supply device 102 and the main equipment 101, air inlet pipe 110 is provided with and is used to control the charge flow rate of etching reaction gas and the gas stream adjuster valve 103 of flow velocity, water supply installation 106 provides required cooling water for the sample etching process, be connected with water supply hose 112 and scupper hose 113 between water supply installation 106 and the main equipment 101, be connected with blast pipe 111 between vacuum pump 105 and the main equipment 101, vacuum meter 104 is connected on the blast pipe 111.
Reaction unit is arranged in the microwave office 1, and reaction unit comprises reative cell 4 and the quartz cover 5 that is complementary with reative cell 4.The structure of quartz cover as shown in Figure 4, quartz cover 5 is circular-arc, circular-arc quartz cover 5 can increase the contact area of reative cell reaction gases and microwave, thereby increases the coupling efficiency of microwave energy, has also increased the compression strength of quartz cover 5 simultaneously; Be provided with sealing device between quartz cover 5 and the reative cell 4, sealing device separates microwave office 1 with reative cell 4, make microwave office 1 and reative cell 4 be under the different pressure states, and play an effect that microwave energy is coupled into reative cell 4, sealing device comprises the annular seal groove 41 and the sealing cell wall 42 that is arranged on the annular seal groove 41 on the top that is arranged at reative cell 4 as shown in Figure 5, be provided with sealing rubber ring 43 (not shown in Fig. 5) in the annular seal groove 41, quartz cover 5 is provided with quartz cover handle 51, offer the opening 44 of being convenient to pick and place quartz cover 5 on the sealing cell wall 42, quartz cover 5 is buckled in the annular seal groove 41.When reality is used, can on sealing rubber ring 43, be coated with the last layer seal grease, can make that like this sealing effectiveness is better.Quartz cover 5, sample stage 7 and reaction chamber 46 of restraint device 8 common formations, the plasma confinement that microwave excitation produces is in reaction chamber 46.
Be provided with base support 6, sample stage 7 and restraint device 8 in the reative cell 4.Shown in Fig. 7 a and Fig. 7 b, the bottom of base support 6 is provided with central exhaust component 61, and central exhaust component 61 is communicated with reative cell 4 and vacuum plant 107.Central authorities' exhaust component 61 comprises main exhaust 63 and is symmetrically distributed in main exhaust 63 four branched discharge pipes 64 all around, four branched discharge pipes 64 are communicated with reative cell 4 respectively, main exhaust 63 is communicated with branched discharge pipe 64, main exhaust 63 is connected with vacuum plant 107 by blast pipe 111, vacuum meter 104 in the vacuum plant 107 is used for the pressure values in the observing response chamber 4, and vacuum pump 105 is used to keep the vacuum degree in the reative cell 4 and the discharge of waste gas.At this, the diameter of main exhaust 63 can be designed in the 6-15mm scope, with the design of the diameter of branched discharge pipe 64 in the 4-8mm scope, the restriction of main exhaust 63 sizes mainly be for the access pipeline correspondence of external vacuum pump 105, also be for laboratory air-channel system correspondence commonly used.
The top of reative cell 4 is provided with the inlet air flow annular disperser 9 that is connected with restraint device 8, be provided with the admission line 45 of the bottom of running through reative cell 4 in the reative cell 4, admission line 45 is communicated with the air inlet pipe 110 of outside, and inlet air flow annular disperser 9 is connected with gas supply device 102 with air inlet pipe 110 by admission line 45.Inlet air flow annular disperser 9 is provided with annular gas and disperses chamber 91, annular gas disperses chamber 91 to be communicated with admission line 45, be evenly distributed with at least eight gas dispersion apertures 92 on the inlet air flow annular disperser 9, gas dispersion aperture 92 can evenly disperse the gas that reacts, gas dispersion aperture 92 disperses chamber 91 to be communicated with annular gas, should be complementary with the radian of quartz cover 5 and the diameter of gas dispersion aperture 92 should not be too big at the slope of this gas dispersion aperture 92, effective like this directivity that guarantees gas stream, make that the gas of eluting gas dispersion apertures 92 is mobile along the curved surface of quartz cover 5, thereby can increase the coupling efficiency of reacting gas and microwave, to produce highdensity plasma.In addition, also can guarantee the directivity of gas stream by additive method, as shown in Figure 9, can be threaded 93 in the gas dispersion aperture 92, the aperture of gas dispersion aperture 92 can be designed to 4mm, the width of screw thread 93 is 1mm, sleeve pipe 95 so as required can be spirally connected in gas dispersion aperture 92, be provided with the airflow hole 96 that runs through sleeve pipe 95 in the sleeve pipe 95, gas dispersion aperture 92 is communicated with airflow hole 96, sleeve pipe 95 the flow velocity that mainly plays adjustments of gas is set, the oblique fire direction of control gaseous and the distribution of gas in reative cell 4, the pore size of airflow hole 96 can design as required, to change the flow velocity size of air-flow, the length of the sleeve pipe 95 that also can extend as required is with the distribution of adjustments of gas stream in reative cell 4.
When using the utility model, restraint device 8, inlet air flow annular disperser 9, reative cell 4 and base support 6 all should ground connection, to keep the ground potential of plasma.
The desirable metal material of material such as the aluminium alloy of the parts in this specific embodiment in microwave office's cavity 11 and reative cell 4 and the reative cell 4 prepare, microwave office's cavity 11 or reative cell 4 and the direct contact portion of microwave can spray the coating of microwave reflection, then to spray coating such as carborundum, alundum (Al etc. with the plasma contact portion, should spray then for the conductor contact-making surface of needs conductions that to have corrosion resistance high and the coating of satisfactory electrical conductivity such as the coat of silicon carbide that electricity is led arranged with strong corrosion resistant.
The sample of the utility model etching can be opto-electronic device, electronics machine component, optics, silicon chip etc.
The course of work of the present utility model and principle are: the reacting gas that gas supply device provides disperses in the chamber from the annular gas that admission line flows into inlet air flow annular disperser by air inlet pipe, evenly disperse to enter in the reaction chamber by the gas dispersion aperture on the inlet air flow annular disperser again, because the aperture of gas dispersion aperture is less and have certain inclination angle, therefore, mobile from the reacting gas that the gas dispersion aperture flows out along the cambered surface of quartz cover, and the microwave that microwave source produces is by setting up electromagnetic field in the large-area quartz cover introducing reaction chamber, when reacting gas is subjected to microwave irradiation and after being energized, electronics in the reacting gas obtains energy under the microwave field effect, make its ionization with gas molecule collision, thereby obtain more freedom electronics and ion (being plasma), the free electron and the ion that produce spread downwards, and the whole orientation of making macroscopic view of electronics and ion moves under the effect of high frequency bias power supply, wherein the ion population of positively charged is to the sample stage motion of back bias voltage, and at the sample that bombards under the acceleration in sample stage upper surface sheath floor district on the loading surface that is placed in sample stage, thereby reach the effect of etching, the waste gas after the etching is discharged outside the reative cell by the air vent hole and the central exhaust component of the annular spread on the constraint base ring.In etching process, the generation density that can improve plasma by the microwave power that increases microwave source reaches the purpose that improves etch rate, and for improving etching depth and etching dynamics, then can realize by increasing the high frequency bias power source voltage.In whole process, reaction chamber is under the state of low pressure, to guarantee carrying out smoothly of gas discharge.
Claims (10)
1, a kind of microwave excited small-sized plasma etching apparatus, comprise main equipment and ancillary equipment, described ancillary equipment is mainly by gas supply device, water supply installation and vacuum plant are formed, described gas supply device, described water supply installation is connected with described main equipment respectively with described vacuum plant, it is characterized in that described main equipment mainly is made up of microwave system and reaction unit, described microwave system comprises microwave office, the microwave control circuit that is arranged at the microwave source in the described microwave office and is electrically connected with described microwave source, described reaction unit is arranged in the described microwave office, described reaction unit comprises reative cell and the quartz cover that is complementary with described reative cell, be provided with base support in the described reative cell, sample stage and restraint device, the bottom of described base support is provided with central exhaust component, described central exhaust component is connected with described vacuum plant by blast pipe, described sample stage insulation is connected on the described base support, described sample stage is connected with the high frequency bias power supply that is used to regulate and control bias voltage, be provided with water-cooling groove in the described sample stage, described water-cooling groove is connected with described water supply installation with drainage pipe by water inlet pipe, the top of described reative cell is provided with inlet air flow annular disperser, described inlet air flow annular disperser is connected with described gas supply device by admission line and air inlet pipe, and described inlet air flow annular disperser is connected with described restraint device.
2, microwave excited small-sized plasma etching apparatus according to claim 1, it is characterized in that described microwave office comprise microwave office's cavity and with the movable microwave chamber door that cooperates of described microwave office cavity, described microwave source be arranged at described microwave office cavity directly over, described microwave chamber door is provided with the watch window that is used to observe etching sample process, and the micro-wave screening net is housed on the described watch window.
3, microwave excited small-sized plasma etching apparatus according to claim 1 is characterized in that described quartz cover is circular-arc, is provided with sealing device between described quartz cover and the described reative cell.
4, microwave excited small-sized plasma etching apparatus according to claim 3, it is characterized in that described sealing device comprises the annular seal groove and the sealing cell wall that is arranged on the described annular seal groove on the top that is arranged at described reative cell, be provided with sealing rubber ring in the described annular seal groove, described quartz cover is provided with the quartz cover handle, offers the opening of being convenient to pick and place described quartz cover on the described sealing cell wall.
5, microwave excited small-sized plasma etching apparatus according to claim 1, it is characterized in that described central exhaust component comprises main exhaust and is distributed in described main exhaust branched discharge pipe all around, described main exhaust is communicated with described branched discharge pipe, and described main exhaust is connected with described vacuum plant by described blast pipe.
6, microwave excited small-sized plasma etching apparatus according to claim 1 is characterized in that being provided with seal between described base support and the described sample stage.
7, microwave excited small-sized plasma etching apparatus according to claim 1, it is characterized in that the material that described restraint device adopts is the material with good electrical conductivity and thermal conductivity, described restraint device comprises constraint wall and constraint base ring, described constraint base ring is arranged at the bottom of described constraint wall, the thickness of described constraint base ring is greater than 8mm, annular is evenly distributed with and is used to control the flow velocity of air-flow and the air vent hole of distribution on the described constraint base ring, the upper surface of described constraint base ring a little more than or etc. be higher than the loading surface of described sample stage, be provided with insulated ring between described constraint base ring and the described sample stage, the top of described constraint wall is connected with described inlet air flow annular disperser.
8, microwave excited small-sized plasma etching apparatus according to claim 3, it is characterized in that described admission line is arranged in the described reative cell and runs through the bottom of described reative cell, described admission line is communicated with described air inlet pipe, described inlet air flow annular disperser is provided with annular gas and disperses the chamber, described annular gas disperses the chamber to be communicated with described admission line, be evenly distributed with the gas dispersion aperture on the described inlet air flow annular disperser, described gas dispersion aperture disperses the chamber to be communicated with described annular gas, and the slope of described gas dispersion aperture and the radian of described quartz cover are complementary.
9, microwave excited small-sized plasma etching apparatus according to claim 8, it is characterized in that in the described gas dispersion aperture sleeve pipe being installed, be provided with the airflow hole that runs through described sleeve pipe in the described sleeve pipe, described gas dispersion aperture is communicated with described airflow hole.
10, microwave excited small-sized plasma etching apparatus according to claim 1, it is characterized in that described water inlet pipe comprises into water metal tube and water supply hose, described drainage pipe comprises draining metal tube and scupper hose, described water inlet metal tube and described draining metal tube all are arranged in the described water-cooling groove and run through the bottom of described water-cooling groove, one end of described water inlet metal tube passes described base support and described central exhaust component is communicated with described water supply hose, one end of described draining metal tube passes described base support and described central exhaust component is communicated with described scupper hose, described water supply hose is connected with described water supply installation respectively with described scupper hose, described water inlet metal tube is positioned at the cell wall of the crooked and described mouth of pipe of the mouth of pipe of an end of described water-cooling groove towards described water-cooling groove, the position of the mouth of pipe of described water inlet metal tube is near the bottom of described water-cooling groove, and described draining metal tube is positioned at the top of the close described water-cooling groove in position of the mouth of pipe of an end of described water-cooling groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920118415U CN201383492Y (en) | 2009-04-23 | 2009-04-23 | Microwave excitation small-sized plasma etching device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200920118415U CN201383492Y (en) | 2009-04-23 | 2009-04-23 | Microwave excitation small-sized plasma etching device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104766778A (en) * | 2015-03-31 | 2015-07-08 | 上海华力微电子有限公司 | Plasma etching equipment cavity sealing face protecting device |
| CN104916564A (en) * | 2014-03-13 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing device |
| WO2021208408A1 (en) * | 2020-04-16 | 2021-10-21 | 苏州邦提克智能科技有限公司 | Tubular dielectric barrier discharge plasma generation device |
-
2009
- 2009-04-23 CN CN200920118415U patent/CN201383492Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916564A (en) * | 2014-03-13 | 2015-09-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing device |
| WO2015135350A1 (en) * | 2014-03-13 | 2015-09-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma machining device |
| CN104916564B (en) * | 2014-03-13 | 2018-01-09 | 北京北方华创微电子装备有限公司 | Reaction chamber and plasma processing device |
| CN104766778A (en) * | 2015-03-31 | 2015-07-08 | 上海华力微电子有限公司 | Plasma etching equipment cavity sealing face protecting device |
| WO2021208408A1 (en) * | 2020-04-16 | 2021-10-21 | 苏州邦提克智能科技有限公司 | Tubular dielectric barrier discharge plasma generation device |
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Granted publication date: 20100113 Termination date: 20120423 |