CN103794725A - Ink-jet printing method based on organic semiconductor film crystallization orientation induction by heavy metal - Google Patents
Ink-jet printing method based on organic semiconductor film crystallization orientation induction by heavy metal Download PDFInfo
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- CN103794725A CN103794725A CN201410072003.6A CN201410072003A CN103794725A CN 103794725 A CN103794725 A CN 103794725A CN 201410072003 A CN201410072003 A CN 201410072003A CN 103794725 A CN103794725 A CN 103794725A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
Abstract
The invention discloses an ink-jet printing method based on organic semiconductor film crystallization orientation induction by heavy metal. The method is characterized by comprising the steps that a substrate is obtained, a heavy metal layer is evaporated on a part of the substrate, and therefore a heave metal area, a substrate area and the boundary line between the heavy metal area and the substrate area are formed; by means of the ink-jet printing mode, an organic semiconductor film is prepared with one point in the heavy metal area as a printing starting point and one point in the substrate area as a printing terminal point, the length of the organic semiconductor film in the heavy metal area is Lr, the total length of the organic semiconductor film is Ls, eta=Lr/ls, and then eta ranges from 14.1 percent to 76.5 percent. According to the ink-jet printing method based on organic semiconductor film crystallization orientation induction by heavy metal, when the organic semiconductor film is prepared in the mode of ink-jet printing, the feature that the heavy metal has a larger surface energy dispersion component relative to the surface of the substrate is utilized, crystallization orientation of the organic semiconductor film is induced, and the prepared organic semiconductor film is even in thickness, has crystallization orientation and is suitable for manufacturing a high-performance organic thin-film transistor.
Description
Technical field
The present invention relates to a kind of inkjet printing methods based on heavy metal induction organic semiconductor thin-film crystalline orientation.
Background technology
Organic electronic material and device are because it has flexibility, light-duty, easily processing and can, by the feature such as MOLECULE DESIGN performance of control, be subject in recent years extensive concern and further investigation.Micro-patterning process technology is to realize the necessary means of electronic device and integrated processing thereof, is also a hot issue of organic electronic research field.Many simple efficient non-traditional pattern process method are developed and are applied in the processing of organic electronic device, mainly comprise silk screen printing, rigid masks technology, soft printing, nano impression, laser thermal transfer printing, inkjet printing etc.These technology have been given full play to the easily feature of processing of organic material, can in patterning process, protect the performance of organic electronic material can not suffer damage because of the reason of processing technology simultaneously.
In recent years, the research of OTFT (organic thin film transistor, OTFT) device and application are fast-developing, enjoy people's concern as the new Display Technique of the next generation.Compared with silicon-based transistor, OTFT has more advantage: first preparation method's flexible and convenient of organic film, as Langmuir-Blodgett(LB) technology, numerator self-assembly technique, vacuum evaporation, inkjet printing etc.; Secondly the preparation technology of organic film is lower to equipment requirement, does not need high-temperature heat treatment, thereby has reduced production cost.Meanwhile, can improve by suitably modifying organic molecular structure the performance of OTFT device with organic material.In addition, OTFT device also has good pliability, carries convenient.There are some researches show, " entirely organic " transistor (transistor of all making with organic material) is carried out to moderately distortion or bending, can't change significantly the electrology characteristic of device, this good characteristic has further been widened the scope of application of OTFT.
In academia and industrial quarters, solwution method is manufactured OTFT and is more and more paid close attention to.Compared with other method, the OTFT technique based on organic solution is due to its low temperature with without the manufacture process of vacuum, and the advantage such as having can low temperature manufacture, low cost of manufacture, has caused extensive concern.And inkjet printing is at present for the preparation of one of the most promising solwution method of OTFT device.Inkjet technology is that digital figure is directly delivered to and on substrate, is formed patterned film by relevant device, therefore do not need original template, can realize efficiently the patterning processing of organic film in flexible and large-area substrates, be therefore considered to have most the technology of industrial prospect simultaneously.Wherein inkjet technology can be given full play to the feature of organic molecule solution processable, substrate material is not had to special requirement simultaneously, therefore be used to, in the processing of macromolecule Organic Light Emitting Diode, macromolecule OTFT and integrated device thereof, obtain the thin-film device of better performances.
In the OTFT of solution-treated material, two (triisopropyl silylethynyl) pentacenes (TIPS-PEN) of 6,13-have been widely used as the active layer of OTFT because of its high mobility and on-off ratio.But TIPS-PEN film is due to the difference of its crystalline phase pattern and orientation, causes the film of printing on a substrate on electric property, to have very big-difference.Controlling thickness evenness and the crystallization behavior of film well, is the necessary process that improves the small molecule organic semiconductor thin film field-effect mobilities such as TIPS-PEN and individual devices performance, is also the effective means that improves corresponding device performance uniformity.
Experimental study shows, the interaction of solute molecule in substrate and ink, particularly the Van der Waals force between substrate and solute molecule is the key factor that affects ink dried film forming procedure, and larger substrate surface energy dispersive component is conducive to solute molecule crystal film fixing and self-assembled growth formation large-size occurs at solution edge.Existing method has: take TIPS-PEN as solute, dichloro-benzenes is solvent formulate ink.By adding dodecane, induction produces kalimeris dagger-axe Buddhist nun and flows, and cooperation solvent evaporates the Radial Flow causing and forms circulation, completes by this self assembling process of single-point, makes it have the crystalline orientation of center radiation shape.But the validity of the method is only printed in technique and obtained checking at single-point, and for the film of printing list lines or multi-line composition, due to the decline of flowing fluid ratio surface area, the implementation result of the method is unsatisfactory.In addition, take TIPS-PEN as solute, take tetrahydronaphthalene as solvent formulate ink.By spin coating P α MS layer on insulating barrier, at 70 ℃, print and form bi-component blend, when dry, complete self-assembled film by vertical phase separation, corresponding film has good uniformity.The shortcoming of the method is to need to adopt higher technological temperature and complicated process of preparation.Therefore, be necessary to develop new substitute technology and expand the range of application of inkjet technology.
Summary of the invention
In order to solve the uncertainty of the crystalline orientation that the isotropic spreading behavior of inkjet printing ink inside brings, the present invention proposes to adopt the inkjet printing methods of heavy metal induction organic semiconductor thin-film crystalline orientation, by simple low cost process, utilize the membrane process that is self-assembled into of molecule organic semiconductor in solid phase surface induction control solution, in improving film gauge uniformity, be formed with the crystalline orientation that is beneficial to electron transfer.
Technical solution problem of the present invention, adopts following technical scheme:
The present invention is based on the inkjet printing methods of heavy metal induction organic semiconductor thin-film crystalline orientation, its feature is: get substrate, at the local evaporation heavy metal layer of described substrate, form the boundary line of heavy metal region, basal region and heavy metal region and basal region; By the mode of inkjet printing, take in heavy metal region a bit for print starting point, take in basal region a bit as printing terminal, prepare organic semiconductor thin-film, making organic semiconductor thin-film is L in the length in described heavy metal region
r, the overall length that makes organic semiconductor thin-film is L
s, make η=L
r/ L
s, η meets η=14.1%～76.5%.
The inkjet printing methods that the present invention is based on heavy metal induction organic semiconductor thin-film crystalline orientation, its feature is also: the atomic number of described heavy metal layer heavy metal used is greater than 26.
The thickness of described heavy metal layer is 5～50nm.
The surface energy dispersive component of described heavy metal layer can dispersive component large 5%～15% than the surface of described substrate.
Heavy metal layer can be designed as arbitrary shape, and the boundary line of heavy metal region and basal region also can have any shape, and substrate also has multiple choices, the substrate of for example patterning.
Described organic semiconductor thin-film is two (triisopropyl silylethynyl) pentacene thin film of 6,13-.
Compared with the prior art, beneficial effect of the present invention is embodied in:
1, the present invention is in the time preparing organic semiconductor thin-film in the mode of inkjet printing, utilize the surface energy dispersive component of heavy metal layer than the surface energy dispersive component large 5%～15% of printed substrates, the crystalline orientation of induction organic semiconductor thin-film, the even thickness of prepared organic semiconductor thin-film, and there is crystalline orientation, be applicable to making high-performance OTFT;
2, the present invention is based on the inkjet printing methods of heavy metal induction organic semiconductor thin-film crystalline orientation, solved the contingency problem of the existing organic semiconductor thin-film crystalline orientation of preparing by inkjet printing;
3, simple, the easy operating of technique of the present invention.
Accompanying drawing explanation
Fig. 1 is at Au/PVP interface printing list lattice array and polarisation picture thereof under 35 ℃ of conditions;
Fig. 2 prints single-point pattern at Au/PVP interface under 35 ℃ of conditions: a is Au interface; B is interface, Au-PVP boundary; C is PVP interface; D, e, f are respectively a, b, polarisation picture that c is corresponding;
Fig. 3 is the model schematic diagram of gold to thin film crystallization orientation induction;
Fig. 4 be under 35 ℃ of conditions in different η value printing list lines film morphology: a is η <-D
s/ 2L
s, b is η=14.1%, and c is η=28.3%, and d is η=48.1%, and e is that η=64.4%, f are that η=76.5%, g～l are followed successively by the corresponding polarisation picture of a～f.
Specific embodiment
The inkjet printing methods of the present embodiment based on metal inducement organic semiconductor thin-film crystalline orientation is to get substrate, at its local evaporation heavy metal layer, forms the boundary line of heavy metal region, basal region and heavy metal region and basal region; By the mode of inkjet printing, take in heavy metal region a bit for print starting point, take in basal region a bit as printing terminal, prepare organic semiconductor thin-film, making organic semiconductor thin-film is L in the length in described heavy metal region
r, the overall length that makes organic semiconductor thin-film is L
s, make η=L
r/ L
s, η meets η=14.1%～76.5%.
The thickness of heavy metal layer is 5～20nm.Heavy metal layer cross thin meeting cause its surface can skewness and precision not high; Blocked up continuity and the waste material that destroys organic semiconductor thin-film.
The present embodiment adopts surperficial SiO
2thickness of insulating layer be on the Si sheet of highly doped degree of 300nm spin coating PVP layer (thickness is 100nm) as substrate, selected ink is using TIPS-PEN as solute, prepare according to mass fraction 2wt% take tetrahydronaphthalene as solvent; Selected heavy metal is gold (Au).
Utilize heavy metal layer to there is larger surface energy dispersive component with respect to substrate surface, induce the membrane process that is self-assembled into of film, be formed with and be beneficial to the crystallization shape of electron transfer and certain crystalline orientation.This film is applicable to making high-performance OTFT.Table 1 is depicted as a heavy metal species Au (phenyl-pentafluoride thiophenol gas phase treatment) and a kind of organic material poly-(4-Vinyl phenol) surface energy measurement result (PVP), and wherein contact angle is to obtain by contact angle measurement.Phenyl-pentafluoride thiophenol process Au be can dispersive component difference for fear of Au and PVP surface excessive and destruction film continuity.The two surface can dispersive component the attach most importance to surface of metal level of the OK range of difference can dispersive component can dispersive component than the surface of printed substrates high by 5%～15%.
The surface of table 1Au and PVP can be added up
As shown in Figure 1, under 35 ℃ of conditions at Au/PVP interface printing list lattice array figure.Fig. 1 (a) be its without petrographic microscope image, Fig. 1 (b) is its petrographic microscope image.As we can see from the figure, at Au interface, interface, Au-PVP boundary, there are three kinds of different single-point patterns in PVP interface.This difference is particularly evident in polarized light image.Further, in order to probe into its single-point pattern, choose the representative adjacent single-point in three, three kinds of interfaces, by its pattern of high power metallography microscope sem observation, as shown in Figure 2.Fig. 2 (a) is Au substrate surface single-point figure, and Fig. 2 (b) is surface, Au-PVP junctional area single-point figure, and Fig. 2 (c) is PVP substrate surface single-point figure; Fig. 2 (d)～(f) is respectively corresponding single-point polarisation figure.
Three kinds of surperficial single-point patterns present evident regularity as can be seen from Figure 2.Single-point diameter is according to the difference of printed substrate, at Au substrate surface, and surface, Au-PVP junctional area, PVP substrate surface reduces successively gradually; And single-point has formed obvious crystalline orientation on surface, Au-PVP junctional area, this orientation is in a certain angle with respect to Print direction.This has illustrated that Au substrate can change the local-crystalized pattern of organic semi-conductor, the possibility of induced crystallization orientation.
Fig. 3 is the model schematic diagram of gold to thin film crystallization orientation induction.For there is the schematic diagram of golden induction in Fig. 3 (a), Fig. 3 (b) is not for existing the schematic diagram of golden induction.In our model, definition D
sfor the maximum of single-point on PVP substrate sprawled diameter.Definition:
η=L
r/L
s (1)
Wherein, L
rfor organic semiconductor thin-film is at the length in heavy metal region, L
sfor the overall length of organic semiconductor thin-film.
Further, if definition thin film crystallization orientation is θ with respect to the angle of printing line orientations, θ characterizes a good and bad index of thin film crystallization orientation so, and η is a variable that affects θ, and η and thin film crystallization degree also exist certain relation.
Fig. 4 is single line bar film morphology figure and the polarisation figure printing under 35 ℃ of conditions.In polarized light microscopy photo, the luminance difference of printing thin film shows that the thin film crystallization degree of printing under the substrate of different materials is different: under Au induction, be printed on the degree of crystallinity that the film on PVP substrate has the crystal size of obvious increase and obviously strengthens.
As can be seen from Figure 4, in Fig. 4 (a), η <-D
s/ 2L
stime (now without Au induction), film is without any the crystallite being orientated in face, does not have θ angle preferentially; In Fig. 4 (b), when η=14.1%, the induction of Au starts to manifest, but due to contact area deficiency, this induction is not enough to affect whole thin film crystallization orientation, therefore formed the film first half shape crystalline orientation into θ angle that only contact with Au and latter half without the special appearance being orientated; In Fig. 4 (c), when η=28.3%, this induction exerts an influence to whole thin film crystallization orientation; At Fig. 4 (d) with (e), in the time of η=48.1% and 64.4%, the θ angle crystalline orientation that this induction forms is very obvious; In Fig. 4 (f), in the time of η=76.5%, this induction intensity is excessive, and film almost all guides on Au substrate, and at this moment η has exceeded OK range.
Therefore, by controlling η a suitable scope, can obtain good thin film crystallization orientation, in the present embodiment, this scope is take the situation of η=14.1% as lower limit, take the situation of η=76.5% as the upper limit.
In sum, when η value is controlled at OK range by we, there is with respect to substrate surface the membrane process that is self-assembled into that heavy metal layer that larger surface can dispersive component will induction organic semiconductor thin-film so, be formed with and be beneficial to the large-size crystals film morphology of electron transfer and certain face intercrystalline orientation, this orientation is characterized by θ value.The large-size crystals film that this induction forms has controlled θ value simultaneously, is applicable to making high-performance OTFT.
Claims (5)
1. the inkjet printing methods based on heavy metal induction organic semiconductor thin-film crystalline orientation, it is characterized in that: get substrate, at the local evaporation heavy metal layer of described substrate, form the boundary line of heavy metal region, basal region and heavy metal region and basal region; By the mode of inkjet printing, take in heavy metal region a bit for print starting point, take in basal region a bit as printing terminal, prepare organic semiconductor thin-film, making organic semiconductor thin-film is L in the length in described heavy metal region
r, the overall length that makes organic semiconductor thin-film is L
s, make η=L
r/ L
s, η meets η=14.1%～76.5%.
2. the inkjet printing methods based on heavy metal induction organic semiconductor thin-film crystalline orientation according to claim 1, is characterized in that: the atomic number of described heavy metal layer heavy metal used is greater than 26.
3. the inkjet printing methods based on heavy metal induction organic semiconductor thin-film crystalline orientation according to claim 1, is characterized in that: the thickness of described heavy metal layer is 5～50nm.
4. the inkjet printing methods based on heavy metal induction organic semiconductor thin-film crystalline orientation according to claim 1, is characterized in that: the surface energy dispersive component of described heavy metal layer can dispersive component large 5%～15% than the surface of described substrate.
5. the inkjet printing methods based on heavy metal induction organic semiconductor thin-film crystalline orientation according to claim 1, is characterized in that: described organic semiconductor thin-film is two (triisopropyl silylethynyl) pentacene thin film of 6,13-.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328812A (en) * | 2015-07-06 | 2017-01-11 | 元太科技工业股份有限公司 | Active element and manufacturing method thereof |
| CN106356453A (en) * | 2016-09-29 | 2017-01-25 | 合肥工业大学 | Asymmetric-structure-based organic semiconductor thin film oriented-preparation method and characterization method |
| CN108602017A (en) * | 2015-12-10 | 2018-09-28 | 康奈尔大学 | Ordered nano particle and particle coating and production and preparation method thereof |
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| WO2012001358A1 (en) * | 2010-07-02 | 2012-01-05 | Cambridge Display Technology Limited | Method of forming a semiconductor device |
| CN102623639A (en) * | 2012-04-10 | 2012-08-01 | 合肥工业大学 | Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step |
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| WO2012001358A1 (en) * | 2010-07-02 | 2012-01-05 | Cambridge Display Technology Limited | Method of forming a semiconductor device |
| CN103403903A (en) * | 2010-10-07 | 2013-11-20 | 乔治亚州技术研究公司 | Field-effect transistor and manufacturing process thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328812A (en) * | 2015-07-06 | 2017-01-11 | 元太科技工业股份有限公司 | Active element and manufacturing method thereof |
| CN106328812B (en) * | 2015-07-06 | 2019-10-18 | 元太科技工业股份有限公司 | Active component and preparation method thereof |
| CN108602017A (en) * | 2015-12-10 | 2018-09-28 | 康奈尔大学 | Ordered nano particle and particle coating and production and preparation method thereof |
| CN106356453A (en) * | 2016-09-29 | 2017-01-25 | 合肥工业大学 | Asymmetric-structure-based organic semiconductor thin film oriented-preparation method and characterization method |
| CN106356453B (en) * | 2016-09-29 | 2018-12-21 | 合肥工业大学 | A kind of organic semiconductor thin-film orientation preparation method and characterizing method based on unsymmetric structure |
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