CN103794473B - The method of transition metal impurity in silicon wafer or silicon device is absorbed under a kind of room temperature - Google Patents
The method of transition metal impurity in silicon wafer or silicon device is absorbed under a kind of room temperature Download PDFInfo
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- CN103794473B CN103794473B CN201410041978.2A CN201410041978A CN103794473B CN 103794473 B CN103794473 B CN 103794473B CN 201410041978 A CN201410041978 A CN 201410041978A CN 103794473 B CN103794473 B CN 103794473B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 133
- 239000010703 silicon Substances 0.000 title claims abstract description 133
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000012535 impurity Substances 0.000 title claims abstract description 50
- 150000003624 transition metals Chemical class 0.000 title claims abstract description 44
- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 43
- 230000007547 defect Effects 0.000 claims abstract description 78
- 238000005247 gettering Methods 0.000 claims abstract description 48
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 230000005250 beta ray Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 8
- 239000002210 silicon-based material Substances 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 229920005591 polysilicon Polymers 0.000 abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 17
- 229910052737 gold Inorganic materials 0.000 description 17
- 239000013078 crystal Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010057362 Underdose Diseases 0.000 description 1
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
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Abstract
The invention discloses a kind of method absorbing transition metal impurity in silicon wafer or silicon device, at room temperature dosage is carried out to silicon wafer or silicon device and be less than 5000Gy low dosage electron irradiation, make the transition metal impurity in silicon wafer district to be cleaned or silicon device active area to the diffusion of neighbouring gettering defect area, thus reduce the transition metal impurity concentration in silicon wafer district to be cleaned or silicon device active area.Compared to existing silicon materials impurity absorption method, the method is at room temperature carried out, thus not only can be used for silicon wafer and also can be used for silicon device gettering, and the method is not limited to monocrystalline or polysilicon chip and silicon device, is also applicable to other semi-conducting material (as germanium) and corresponding device.
Description
Technical field
The present invention relates to room temperature goes down except the method for transition metal impurity in silicon wafer and silicon device, be specifically related at room temperature utilize low dosage electron irradiation and gettering defect area to absorb the transition metal impurity in silicon wafer or silicon device, thus improve the method for silicon wafer quality or silicon device performance.
Background technology
All containing, for example transition metal impurities such as copper, iron, nickel and gold in silicon wafer and silicon device, and being also inevitably subject to the contamination in various degree of multiple transition metal impurity in device fabrication process, the performance of existence to silicon device of these impurity has serious adverse effect.Transition metal impurity content to be reduced in the silicon device techniques such as large scale integrated circuit, solar cell, photodetector as far as possible.Usual employing impurity-absorbing technique also combines with rational process program, transition metal impurity is attracted to certain area and deposits, to reach the object reducing transition metal impurity in silicon single crystal or silicon device active area.For silicon materials, determine that the principal element of minority carrier lifetime is the deep-level impurity defect in semiconductor, transition metal impurity usually has deep energy level in silicon forbidden band.Gettering process will reduce transition metal impurity in silicon materials exactly, increases minority carrier lifetime, reduces transition metal to the compensation of doping shallow in silicon, reduces the content of transition metal silicide, thus improve performance of semiconductor device.
Usual impurity absorption method (as back side damage, phosphorus diffusion and the method such as aluminium alloy) needs five more, 600 and even the high temperature of thousands of degrees Celsius, the time of dozens of minutes to tens hour, this long-time high temperature probably destroys device architecture.
Summary of the invention
The object of the present invention is to provide the method for transition metal impurity in a kind of absorption silicon wafer of the low cost at room temperature just can carried out or silicon device.
Technical scheme of the present invention is as follows:
A kind of method absorbing transition metal impurity in silicon wafer or silicon device, at room temperature low dosage electron irradiation (irradiation dose is less than 5000Gy) is carried out to silicon wafer or silicon device, make the transition metal impurity being positioned at silicon wafer district to be cleaned or silicon device active area to the diffusion of neighbouring gettering defect area, thus reduce the concentration (see Fig. 1) of the transition metal impurity in silicon wafer district to be cleaned or silicon device active area.Wherein, described silicon wafer district to be cleaned refers to the region (the usual degree of depth is less than 5 microns) of certain depth scope under silicon wafer surface, and this region is by the active area for the preparation of silicon device; Gettering defect area near described refers to that district to be cleaned or silicon device active-surface distance are less than the gettering defect area of 3 microns usually with silicon wafer.
The principle of the inventive method can be described intuitively by Fig. 1, but it should be noted that, for convenience of describing, Fig. 1 only gives the situation that gettering defect area is positioned at silicon wafer surface, actual conditions are that gettering defect area is not limited to surface, both can be positioned at above district to be cleaned, also can be positioned at below district to be cleaned or side.In adsorption process, transition metal impurity atom spreads to neighbouring defect area.Silicon under high-power electron beam 4 irradiation in silicon increases from gap densities, according to Kickout mechanism, (silicon moves to the transition metal atoms place of subrogating from interstitial atom, transition metal atoms is clamp-oned in gap, and silicon enter from interstitial atom subrogate position), the concentration being in the transition metal atoms in silicon crystal lattice gap increases greatly, thus greatly accelerates the speed that transition metal at room temperature spreads.And the solubility of transition metal 2 near gettering defect area 3 is far above its solubility in complete silicon crystal lattice, thus at room temperature some transition metal 2(as gold) to be spread to gettering defect area 3 by district to be cleaned or silicon active area and to deposit (Impurity Diffusion direction is as shown in arrow in Fig. 1 (b) 5), form the region 6 of low transition metal impurity content in silicon wafer top layer certain depth scope.
Gettering defect area and low dosage electron irradiation are two key links of the present invention.Gettering defect area of the present invention refers to the defect area that can be used for absorbing transition metal impurity in silicon wafer district to be cleaned or silicon device active area.Gettering defect area can be divided into native defect district, transformation defect area and new three kinds, defect area.For most of single crystal silicon device, native defect district often can't meet the demands, and usually needs to transform, becomes transformation defect area or introduce new defect area, making gettering defect area meet the requirement of gettering.
After native defect district refers to that silicon wafer or silicon device complete by normal preparation technology's manufacture, the defect area existed near silicon wafer district to be cleaned or silicon device active area.Such as: because the periodic arrangement of lattice is at surface termination, atomic arrangement reconstructs, so silicon wafer surface is exactly a native defect district; Wafer prepared by progress in Czochralski silicon method, owing to being rich in oxygen in progress in Czochralski silicon material, oxygen content is up to 10
18cm
-3magnitude, under room temperature, oxygen precipitation forms native defect district; Even if the defect area that ion implantation is also remaining after annealing and polycrystalline silicon material grain boundary Ye Doushi native defect district.For the solar cell prepared by normal configuration and technique with polysilicon semiconductor material, native defect district adds that low dosage electron irradiation just has certain effect of absorbing p-n junction district transition metal impurity.The native defect district of effective gettering effect can be played in electron irradiation process, be usually less than 3 microns with the distance of silicon wafer district to be cleaned or silicon device active area.
In most of the cases, native defect district can not meet gettering requirement, and it is necessary for transforming native defect district or introducing new defect area.Its objective is and improve gettering effect, make it as far as possible to meet the demands.Wherein specially change material, device architecture and technique for improving electron irradiation gettering effect, thus the defect area in transformation native defect district is called transformation defect area.Such as: carry out cleaning at silicon chip or non-packaging surface, be oxidized or the process such as passivation, changing surface state transforms native defect district; Defect remaining after utilizing ion implantation to anneal, as in native defect district situation, changing the parameter of ion implantation and/or annealing, as specially changed annealing temperature, time and mode, changing density and the kind of defect in native defect district, becomes transformation defect area.
Artificially introduce new defect area to reach better gettering object, this defect area should control in the scope being less than 3 microns from silicon wafer district to be cleaned or silicon device active-surface.The method introducing new defect area is a lot, such as: sandblast on the surface of silicon wafer or device, wear and tear; Etch various ditch, groove, hole; Ion implantation or bombardment; Plasma treatment; Carry out laser or incoherent light irradiation; Carry out the diffusion and/or alloy process etc. that add.Introduce new defect area method therefor, intensity and design parameter, have material impact to the character introducing new defect area.Determine after should testing according to the situation of silicon materials or device.
Technical scheme of the present invention is the gettering defect area utilizing silicon wafer or silicon device, comprise native defect district, transform the new defect area of defect area and introducing, (5000Gy is less than by low dosage, usually be less than 500Gy) electron irradiation to absorb the transition metal impurity of silicon wafer top layer and silicon device active area, improve the performance of silicon device.It is pointed out that electron irradiation introduces point defect usually in semiconductor lattice, minority carrier lifetime and carrier concentration decline thereupon, can bring negative effect, cause device performance to decline.And the scheme that the electron irradiation that the present invention adopts adds gettering defect area carrys out gettering, because electron irradiation dosage is low, be usually less than 500Gy, the negative effect brought is little, usually can ignore.
Electron irradiation source can adopt electron accelerator or β ray radiation source as
32p,
90sr,
90y,
147pm etc.For electron accelerator, key control parameter is electron energy, irradiation dose and dose rate; To β ray radiation source, be then irradiation dose and dose rate.When electron irradiation silicon wafer, under doses rate, increase irradiation dose gradually, because electron irradiation produces point defect in silicon, it is generally acknowledged silicon wafer minority carrier lifetime tau should with the rising of irradiation dose monotonic decreasing.Our experiment proves the rising with irradiation dose, and the decline with the τ of the silicon wafer of suitable gettering defect area is slow than not having the silicon wafer of gettering defect area, and at the irradiation initial stage, the former has even occurred the abnormal phenomena that τ rises with the rising of irradiation dose.This can be extracted to gettering defect area to explain with the transition metal impurity playing complex centre effect in silicon chip.When irradiation dose constantly rises, the point defect produced also constantly increases, and in silicon chip, the leaching process of transition metal impurity can be tending towards limit gradually, and finally, τ will decline with the rising of irradiation dose.Under the rising and larger irradiation dose of irradiation initial stage τ τ decline between, τ reaches maximum.If be abscissa with irradiation dose, and with the τ/τ of characteristic
oas ordinate, wherein τ
othe minority carrier lifetime of predose silicon wafer, then τ/τ
ofunction as irradiation dose also has a maximum.We carry out 3 ~ 5MeV energy electron irradiation to the silicon chip of Au ion implantation, and dose rate is 8Gy/s, the τ/τ recorded
oas the function of irradiation dose, be shown in Fig. 2.For certain silicon device with certain gettering defect area, under the fixed condition in high-energy electron irradiation source, should be determined by experiment and silicon device parameter can be made to obtain the irradiation energy of maximum improvement, dosage and dose rate.For Different Silicon device and its different parameters, optimum electron irradiation energy, dosage and dose rate are different.Generally speaking, the energy range of electron irradiation is 0.01 ~ 100MeV, and preferable range is 0.1 ~ 10MeV, is more preferably 2 ~ 5MeV; Dose rate scope is 1 ~ 1000Gy/s; Irradiation dose scope is 1 ~ 5000Gy, and preferable range is 1 ~ 1000Gy, more preferably 1 ~ 500Gy.Electron accelerator has better performance of control relative to β ray radiation source, in general, is more suitable electron irradiation equipment.
From existing silicon materials impurity absorption method (as the back side damage, the method such as aluminium phosphorus diffusion) all need high temperature different, the method that the electron irradiation that the present invention proposes absorbs transition metal impurity in silicon wafer or silicon device is at room temperature carried out, thus not only can be used for the silicon wafer gettering before device preparation, also gettering can be carried out in device fabrication process, and to the silicon device gettering prepared.In addition, also have with usual silicon materials impurity absorption method difference: the invention is not restricted to monocrystalline or polysilicon chip and silicon device, be also applicable to some other semi-conducting material (as germanium) and corresponding devices.
Accompanying drawing explanation
Fig. 1 is the principle schematic that the present invention absorbs transition metal impurity method in silicon wafer or silicon device, wherein (a) silicon wafer surface gettering defect area; B () electron irradiation makes impurity spread to gettering defect area; C () transition metal impurity is captured in gettering defect area, define a clear area for the preparation of device on silicon wafer top layer; 1-silicon wafer, 2-transition metal impurity, 3-gettering defect area, 4-high-power electron beam, 5-transition metal impurity dispersal direction, 6-clear area.
Fig. 2 is the silicon single crystal disk τ/τ of embodiment 1
0as the functional arrangement of irradiation dose.
Fig. 3 show before embodiment 2 electron irradiation and after 50Gy electron irradiation ion implantation gold silicon wafer in gold concentration distribution.
Embodiment
Below in conjunction with by embodiment, the invention will be further described, but the present invention is not limited to following instance.
Embodiment 1:
Gold is injected to polished silicon single-chip sample, absorbs transition metal impurity gold in silicon chip by electron irradiation impurity absorption method, measure the effect of electron irradiation gettering.Specifically, adopt ion injection method to inject gold, Implantation Energy is 550KeV, surface density 1 × 10
12cm
-2, the silicon single crystal flake obtained containing transition metal impurity gold is tested for gettering.Adopting ICP(inductively coupled plasma before gettering) equipment to silicon single crystal flake process 2 minutes, introduces in silicon single crystal flake front face surface the new defect area that the degree of depth is not more than 20 nanometers under 250W power.Then irradiate silicon wafer front under 3 ~ 5MeV energy with electron accelerator, radiation dose rate is about 8Gy/s, τ/τ
0as irradiation dose function as shown in Figure 2.When irradiation dose is 50Gy, τ/τ
0be 1.85, namely after 50Gy electron irradiation, minority carrier lifetime adds 85%.Minority carrier lifetime increases explanation electron irradiation and has the effect absorbing transition metal impurity.
Embodiment 2
Gold is injected to polished silicon single-chip sample, is absorbed the gold injected in silicon chip by electron irradiation impurity absorption method, with the effect of detected electrons irradiation gettering.Specifically, adopt ion injection method to inject gold, Implantation Energy is 550KeV, surface density 7 × 10
13cm
-2.Use the impurity absorption method in above-described embodiment 1 and conditional parameter, SIMS(secondary ion mass spectroscopy) measure the distribution of silicon single crystal flake gold before and after electron irradiation, the distribution of peaks of the impurity gold of original place in district to be cleaned moves to the gettering defect area of silicon wafer surface significantly, as shown in Figure 3.Under confirming electron irradiation, transition metal impurity gold spreads and the gettering effect be captured to gettering defect area.
Embodiment 3:
To polished silicon single-chip sample implanting transition metal impurities gold, room temperature electron irradiation of upchecking absorbs the effect of gold in silicon wafer.Specifically, gold adopts ion implantation, and energy is 550KeV, implantation dosage 1 × 10
12cm
-2.Adopting ICP(inductively coupled plasma) equipment to silicon single crystal flake process 2 minutes, introduces in its front face surface the gettering defect area that the degree of depth is not more than 20 nanometers under 250W power.Then irradiate front wafer surface with under electron accelerator 3 ~ 5MeV energy, radiation dose rate is 50Gy/s, and irradiation dose is 200Gy, measures the ratio τ/τ of sample minority carrier lifetime before and after electron irradiation
0be 1.96, namely after electron irradiation, minority carrier lifetime adds one times nearly, reflects the minimizing of the transition metal gold concentration as complex centre in silicon single crystal.
Embodiment 4:
Adopt electronic irradiation technique, improve multicrystalline solar cells efficiency.Specifically, utilize native defect district in polysilicon solar cell, do not transform native defect district or introduce new defect area, with under electron accelerator 3 ~ 5MeV energy, front illuminated being carried out to the commercial polysilicon solar battery slice of multi-disc, radiation dose rate is about 8Gy/s, irradiation dose 50Gy, after predose, the photoelectric conversion efficiency of solar cell is as shown in table 1, can find out, after irradiation, polycrystalline silicon battery plate photoelectric conversion efficiency all increases, and increases by 4.2% to 7.1% than prototype part.
The conversion efficiency of solar cell before and after table 1. electron irradiation
Claims (10)
1. absorb the method for transition metal impurity in silicon wafer or silicon device for one kind, at room temperature dosage is carried out to silicon wafer or silicon device and be less than 5000Gy low dosage electron irradiation, make the transition metal impurity in silicon wafer district to be cleaned or silicon device active area to the diffusion of neighbouring gettering defect area, thus reduce the concentration of the transition metal impurity in silicon wafer district to be cleaned or silicon device active area; Wherein, described silicon wafer district to be cleaned refers to the region that the degree of depth is less than 5 microns under silicon wafer surface; Gettering defect area near described refers to the gettering defect area that district to be cleaned or silicon device active-surface distance are less than 3 microns with silicon wafer.
2. the method for claim 1, it is characterized in that, after electron irradiation is carried out to silicon wafer or silicon device in the basis in native defect district, if the gettering effect of expection cannot be reached, then the native defect district of silicon wafer or silicon device is transformed or introduces new defect area, and then carry out electron irradiation, finally meet gettering requirement.
3. method as claimed in claim 2, it is characterized in that, one or more adopting in following method are transformed the native defect district near silicon wafer district to be cleaned or silicon device active area: at silicon wafer or do not encapsulate silicon device surface and clean, be oxidized or Passivation Treatment; Change the parameter that device manufacturing processes intermediate ion injects and/or anneals.
4. method as claimed in claim 2, is characterized in that, one or more adopting in following method introduce new defect area near silicon wafer district to be cleaned or silicon device active area: sandblast on the surface of silicon wafer or silicon device, wear and tear; Etch various ditch, groove, hole; Ion implantation or bombardment; Plasma treatment; Carry out laser or incoherent light irradiation; Carry out the diffusion that adds and/or alloy process.
5. the method for claim 1, is characterized in that, described electron irradiation adopts electron accelerator or β ray radiation source to carry out.
6. method as claimed in claim 5, it is characterized in that, described β ray radiation source is
32p,
90sr,
90y or
147pm.
7. method as claimed in claim 5, it is characterized in that, the energy of electron irradiation is 0.01 ~ 100MeV, and dose rate is 1 ~ 1000Gy/s, and irradiation dose is 1 ~ 5000Gy.
8. method as claimed in claim 7, it is characterized in that, the irradiation dose of electron irradiation is 1 ~ 1000Gy.
9. method as claimed in claim 8, it is characterized in that, the irradiation dose of electron irradiation is 1 ~ 500Gy.
10. method as claimed in claim 7, it is characterized in that, the energy of electron irradiation is 0.1 ~ 10MeV.
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| CN104882377A (en) * | 2015-04-21 | 2015-09-02 | 北京大学 | Method of sucking and removing metal impurity in silicon material at room temperature |
| JP6296001B2 (en) * | 2015-05-20 | 2018-03-20 | 信越半導体株式会社 | Manufacturing method and evaluation method of silicon epitaxial wafer |
| JP2017038030A (en) * | 2015-08-14 | 2017-02-16 | 株式会社ディスコ | Wafer processing method and electronic device |
| CN106910680A (en) * | 2015-12-23 | 2017-06-30 | 北京大学 | The method that metallic atom diffusion in GaAs is encouraged under room temperature environment |
| CN106910681B (en) * | 2015-12-23 | 2019-12-13 | 北京大学 | Method for exciting metal atom diffusion in gallium arsenide under room temperature environment |
| CN107068806B (en) * | 2017-04-19 | 2018-10-19 | 常州时创能源科技有限公司 | The method for eliminating polycrystalline silicon battery plate interior metal complex |
| CN113257953A (en) * | 2021-04-18 | 2021-08-13 | 安徽华晟新能源科技有限公司 | Gettering method and phosphorus gettering device for N-type silicon wafer |
| CN115188825B (en) * | 2022-07-04 | 2024-01-30 | 弘大芯源(深圳)半导体有限公司 | Method for manufacturing radiation-resistant metal oxide semiconductor field effect device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1050792A (en) * | 1990-08-20 | 1991-04-17 | 河北工学院 | The silicon semiconductor device technology to control defect of silicon chip |
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| CN103534791A (en) * | 2011-05-13 | 2014-01-22 | 胜高股份有限公司 | Method for manufacturing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method for manufacturing solid-state image pickup element |
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