CN103794473A - Method for removing transition metal impurities in silicon wafer or silicon device in sucking mode at indoor temperature - Google Patents
Method for removing transition metal impurities in silicon wafer or silicon device in sucking mode at indoor temperature Download PDFInfo
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- CN103794473A CN103794473A CN201410041978.2A CN201410041978A CN103794473A CN 103794473 A CN103794473 A CN 103794473A CN 201410041978 A CN201410041978 A CN 201410041978A CN 103794473 A CN103794473 A CN 103794473A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 133
- 239000010703 silicon Substances 0.000 title claims abstract description 133
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 239000012535 impurity Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 51
- 150000003624 transition metals Chemical class 0.000 title claims abstract description 44
- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 43
- 230000007547 defect Effects 0.000 claims abstract description 78
- 238000005247 gettering Methods 0.000 claims description 46
- 230000000694 effects Effects 0.000 claims description 14
- 238000002513 implantation Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 230000005250 beta ray Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 18
- 229910052737 gold Inorganic materials 0.000 description 18
- 239000013078 crystal Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010057362 Underdose Diseases 0.000 description 1
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 229910021350 transition metal silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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Abstract
The invention discloses a method for removing transition metal impurities in a silicon wafer or silicon device in a sucking mode at the indoor temperature. Low-dose electron irradiation with the dose smaller than 5000 Gy is carried out on the silicon wafer or silicon device at the indoor temperature to enable the transition metal impurities in a to-be-cleaned area of the silicon wafer or an active area of the silicon device to be diffused to a nearby impurity sucking defect area, and therefore the concentration of the transition metal impurities in the to-be-cleaned area of the silicon wafer or the active area of the silicon device is lowered. Compared with an existing silicon material impurity sucking method, the method is implemented at the indoor temperature, and therefore the method can be used for silicon wafer or silicon device impurity sucking, is not limited to the single-crystal or polycrystalline silicon wafer and the silicon device, and is also suitable for other semiconductor materials such as germanium, and corresponding devices.
Description
Technical field
The present invention relates to room temperature goes down except the method for transition metal impurity in silicon wafer and silicon device, be specifically related at room temperature utilize low dosage electron irradiation and gettering defect area to absorb the transition metal impurity in silicon wafer or silicon device, thereby improve the method for silicon wafer quality or silicon device performance.
Background technology
In silicon wafer and silicon device, all contain just like transition metal impurities such as copper, iron, nickel and gold, and in device preparation process, be also inevitably subject to the contamination in various degree of multiple transition metal impurity, the existence of these impurity has serious adverse effect to the performance of silicon device.In the silicon device techniques such as large scale integrated circuit, solar cell, photodetector, to reduce transition metal impurity content as far as possible.Conventionally adopt impurity-absorbing technique and combine with rational process program, transition metal impurity is attracted to deposit to certain area, to reach the object that reduces transition metal impurity in silicon single crystal or silicon device active area.The principal element that determines minority carrier lifetime for silicon materials is the deep-level impurity defect in semiconductor, and transition metal impurity conventionally has deep energy level in silicon forbidden band.Gettering process will reduce transition metal impurity in silicon materials exactly, increases minority carrier lifetime, reduces the compensation of transition metal to shallow doping in silicon, reduces the content of transition metal silicide, thereby improves performance of semiconductor device.
Conventionally impurity absorption method (as methods such as back side damage, phosphorus diffusion and aluminium alloys) need five more, 600 and even the high temperature of thousands of degrees Celsius, the time of dozens of minutes to tens hour, this long-time high temperature probably destroys device architecture.
Summary of the invention
The object of the present invention is to provide a kind of method of absorbing cheaply transition metal impurity in silicon wafer or silicon device that at room temperature just can carry out.
Technical scheme of the present invention is as follows:
A kind of method of absorbing transition metal impurity in silicon wafer or silicon device, at room temperature silicon wafer or silicon device are carried out to low dosage electron irradiation (irradiation dose is less than 5000Gy), make the transition metal impurity that is positioned at silicon wafer district to be cleaned or silicon device active area near gettering defect area diffusion, thereby reduce the concentration (referring to Fig. 1) of the transition metal impurity in silicon wafer district to be cleaned or silicon device active area.Wherein, described silicon wafer district to be cleaned refers to the region (degree of depth is less than 5 microns conventionally) of certain depth scope under silicon wafer surface, and this region is by the active area for the preparation of silicon device; Near gettering defect area described refers to the gettering defect area that is conventionally less than 3 microns with silicon wafer district to be cleaned or silicon device active area Edge Distance.
The principle of the inventive method can be described intuitively by Fig. 1, but it should be noted that, for convenience of describing, Fig. 1 has only provided gettering defect area and has been positioned at the situation of silicon wafer surface, actual conditions are that gettering defect area is not limited to surface, both can be positioned at district to be cleaned above, also can be positioned at below district to be cleaned or side.In adsorption process, transition metal impurity atom is near the diffusion of defect area.Silicon under high-power electron beam 4 irradiation in silicon between gap density increase, according to Kick out mechanism, (silicon moves to the transition metal atoms place of subrogating from interstitial atom, transition metal atoms is clamp-oned in gap, and silicon enters and subrogates position from interstitial atom), the concentration of the transition metal atoms in silicon crystal lattice gap increases greatly, thereby has greatly accelerated the speed that transition metal at room temperature spreads.And transition metal 2 near solubility gettering defect area 3 far above it the solubility in complete silicon crystal lattice, thereby at room temperature some transition metal 2(as gold) spread to gettering defect area 3 by Huo Gui active area, district to be cleaned and deposit (Impurity Diffusion direction is as shown in arrow 5 in Fig. 1 (b)), form the region 6 of low transition metal impurity content in silicon wafer top layer certain depth scope.
Gettering defect area and low dosage electron irradiation are two key links of the present invention.Gettering of the present invention defect area refers to the defect area that can be used for absorbing transition metal impurity in silicon wafer district to be cleaned or silicon device active area.Gettering defect area can be divided into three kinds of native defect district, transformation He Xin defect areas, defect area.For most of monocrystalline silicon device, native defect district often can't meet the demands, and conventionally need to transform, and becomes transformation defect area or introduces new defect area, makes gettering defect area meet the requirement of gettering.
After native defect district refers to that silicon wafer or silicon device complete by normal preparation technology's manufacture, near the defect area having existed silicon wafer district to be cleaned or silicon device active area.For example: because the periodic arrangement of lattice stops on surface, atomic arrangement generation reconstruct, so silicon wafer surface is exactly a native defect district; Wafer prepared by progress in Czochralski silicon method, owing to being rich in oxygen in progress in Czochralski silicon material, oxygen content is up to 10
18cm
-3magnitude, under room temperature, oxygen precipitation forms native defect district; Even if Implantation is in annealing remaining defect area and polycrystalline silicon material grain boundary Ye Doushi native defect district also afterwards.For the solar cell of preparing by normal configuration and technique with polysilicon semiconductor material, native defect district adds that low dosage electron irradiation just has the effect of certain absorption p-n junction district transition metal impurity.In electron irradiation process, can play the native defect district of effective gettering effect, conventionally be less than 3 microns with the distance of silicon wafer district to be cleaned or silicon device active area.
In most of the cases, native defect district can not meet gettering requirement, and it is necessary transforming native defect district or introducing new defect area.Its objective is and improve gettering effect, make it as far as possible to meet the demands.Wherein specially change material, device architecture and technique for improving electron irradiation gettering effect, thereby the defect area that transformation native defect district forms is called transformation defect area.For example: silicon chip or not packaging surface clean, the processing such as oxidation or passivation, change surface state to transform native defect district; Utilize the rear remaining defect of Implantation annealing as in native defect district situation, change the parameter of Implantation and/or annealing, as specially changed annealing temperature, time and mode, change density and the kind of defect in native defect district, become transformation defect area.
Artificially introduce new defect area, the scope that this defect area should be controlled at from silicon wafer district to be cleaned or edge, silicon device active area is less than 3 microns in order to reach better gettering object.The method of introducing new defect area is a lot, for example: sandblast, wear and tear in the surface at silicon wafer or device; The various ditches of etching, groove, hole; Implantation or bombardment; Plasma treatment; Carry out laser or incoherent light irradiation; The diffusion and/or the alloy process etc. that add.Introduce new defect area method therefor, intensity and design parameter, the character of introducing new defect area is had to material impact.After should testing according to the situation of silicon materials or device, determine.
Technical scheme of the present invention is to utilize the gettering defect area of silicon wafer or silicon device, comprise the new defect area of native defect district, transformation defect area and introducing, (be less than 5000Gy by low dosage, conventionally being less than 500Gy) electron irradiation absorbs the transition metal impurity of silicon wafer top layer and silicon device active area, improves the performance of silicon device.It is pointed out that electron irradiation introduces point defect conventionally in semiconductor lattice, minority carrier lifetime and carrier concentration decline thereupon, can bring negative effect, cause device performance to decline.And the scheme that the electron irradiation that the present invention adopts adds gettering defect area is carried out gettering, because electron irradiation dosage is low, be conventionally less than 500Gy, the negative effect bringing is little, conventionally can ignore.
Electron irradiation source can adopt electron accelerator or β ray radiation source as
32p,
90sr,
90y,
147pm etc.For electron accelerator, key control parameter is electron energy, irradiation dose and dose rate; To β ray radiation source, be irradiation dose and dose rate.In the time of electron irradiation silicon wafer, under doses rate, increase gradually irradiation dose, because electron irradiation produces point defect in silicon, it is generally acknowledged that the minority carrier lifetime tau of silicon wafer should the dull decline with the rising of irradiation dose.We experimental results show that the rising with irradiation dose, have the decline of τ of the silicon wafer of suitable gettering defect area than there is no the silicon wafer of gettering defect area for slow, and at the irradiation initial stage, the former has even occurred the abnormal phenomena that τ rises with the rising of irradiation dose.This can be extracted to gettering defect area with the transition metal impurity that plays complex centre effect in silicon chip and explain.When irradiation dose constantly rises, the point defect producing also constantly increases, and in silicon chip, the leaching process of transition metal impurity can be tending towards limit gradually, and final, τ will decline with the rising of irradiation dose.Under the rising of irradiation initial stage τ and larger irradiation dose, between the decline of τ, τ reaches maximum.If take irradiation dose as abscissa, and with the τ/τ of characteristic
oas ordinate, wherein τ
othe minority carrier lifetime of predose silicon wafer, τ/τ
oalso there is a maximum as the function of irradiation dose.We carry out 3～5MeV energy electron irradiation to the silicon chip of Au Implantation, and dose rate is 8Gy/s, the τ/τ recording
oas the function of irradiation dose, be shown in Fig. 2.For certain silicon device with certain gettering defect area, under the fixed condition in high-energy electron irradiation source, should be determined by experiment and can make silicon device parameter obtain maximum irradiation energy, dosage and the dose rate of improving.For Different Silicon device and its different parameters, optimum electron irradiation energy, dosage and dose rate are different.Generally speaking, the energy range of electron irradiation is 0.01～100MeV, and preferable range is 0.1～10MeV, more preferably 2～5MeV; Dose rate scope is 1～1000Gy/s; Irradiation dose scope is 1～5000Gy, and preferable range is 1～1000Gy, more preferably 1～500Gy.Electron accelerator has better performance of control with respect to β ray radiation source, in general, is more suitable electron irradiation equipment.
All need high temperature different from existing silicon materials impurity absorption method (as methods such as back side damage, the diffusions of aluminium phosphorus), the electron irradiation that the present invention proposes is absorbed the method for transition metal impurity in silicon wafer or silicon device and is at room temperature carried out, thereby not only can be used for the silicon wafer gettering before device preparation, also can in device preparation process, carry out gettering, and to the silicon device gettering of having prepared.In addition also have with common silicon materials impurity absorption method difference: the invention is not restricted to monocrystalline or polysilicon chip and silicon device, be also applicable to some other semi-conducting material (as germanium) and corresponding devices.
Accompanying drawing explanation
Fig. 1 is the principle schematic that the present invention absorbs transition metal impurity method in silicon wafer or silicon device, wherein (a) silicon wafer surface gettering defect area; (b) electron irradiation makes impurity spread to gettering defect area; (c) transition metal impurity is captured in gettering defect area, has formed a clear area for the preparation of device on silicon wafer top layer; 1-silicon wafer, 2-transition metal impurity, 3-gettering defect area, 4-high-power electron beam, 5-transition metal impurity dispersal direction, 6-clear area.
Fig. 2 is silicon single crystal disk τ/τ of embodiment 1
0as the functional arrangement of irradiation dose.
In the silicon wafer of Implantation gold, gold concentration distributes before Fig. 3 has shown embodiment 2 electron irradiations and after 50Gy electron irradiation.
Embodiment
Below in conjunction with by embodiment, the invention will be further described, but the present invention is not limited to following instance.
Embodiment 1:
Polished silicon single-chip sample is injected to gold, absorb transition metal impurity gold in silicon chip by electron irradiation impurity absorption method, measure the effect of electron irradiation gettering.Specifically, adopt ion injection method to inject gold, Implantation Energy is 550KeV, surface density 1 × 10
12cm
-2, obtain testing for gettering containing the silicon single crystal flake of transition metal impurity gold.Adopting ICP(inductively coupled plasma before gettering) equipment processes 2 minutes silicon single crystal flake under 250W power, introduces in silicon single crystal flake front face surface the new defect area that the degree of depth is not more than 20 nanometers.Then silicon wafer front is irradiated under 3～5MeV energy with electron accelerator, radiation dose rate is about 8Gy/s, τ/τ
0as the function of irradiation dose as shown in Figure 2.When irradiation dose is 50Gy, τ/τ
0be 1.85,, after 50Gy electron irradiation, minority carrier lifetime has increased by 85%.Minority carrier lifetime increases explanation electron irradiation and has the effect of absorbing transition metal impurity.
Polished silicon single-chip sample is injected to gold, absorb the gold injecting in silicon chip by electron irradiation impurity absorption method, with the effect of detected electrons irradiation gettering.Specifically, adopt ion injection method to inject gold, Implantation Energy is 550KeV, surface density 7 × 10
13cm
-2.Use impurity absorption method and conditional parameter in above-described embodiment 1, SIMS(secondary ion mass spectroscopy) distribution of measuring silicon single crystal flake gold before and after electron irradiation, the distribution of peaks of former impurity gold in district to be cleaned moves to the gettering defect area of silicon wafer surface significantly, as shown in Figure 3.Confirm under electron irradiation that transition metal impurity gold is to the diffusion of gettering defect area captive gettering effect.
Embodiment 3:
To polished silicon single-chip sample implanting transition metal impurities gold, the room temperature of upchecking electron irradiation is absorbed the effect of gold in silicon wafer.Specifically, gold adopts Implantation, and energy is 550KeV, implantation dosage 1 × 10
12cm
-2.Adopting ICP(inductively coupled plasma) equipment processes 2 minutes silicon single crystal flake under 250W power, introduces in its front face surface the gettering defect area that degree of depth is not more than 20 nanometers.Then, with front wafer surface being irradiated under electron accelerator 3～5MeV energy, radiation dose rate is 50Gy/s, and irradiation dose is 200Gy, measures the ratio τ/τ of sample minority carrier lifetime before and after electron irradiation
0be 1.96, after electron irradiation, minority carrier lifetime has increased by one times nearly, has reflected the minimizing as the transition metal gold concentration in complex centre in silicon single crystal.
Embodiment 4:
Adopt electronic irradiation technique, improve multicrystalline solar cells efficiency.Specifically, utilize native defect district in polysilicon solar cell, do not transform native defect district or introduce new defect area, with under electron accelerator 3～5MeV energy, the commercial polysilicon solar battery slice of multi-disc is carried out to front illuminated, radiation dose rate is about 8Gy/s, irradiation dose 50Gy, after predose, the photoelectric conversion efficiency of solar cell is as shown in table 1, can find out, after irradiation, polycrystalline silicon battery plate photoelectric conversion efficiency all increases, and increases by 4.2% to 7.1% than former device.
The conversion efficiency of solar cell before and after table 1. electron irradiation
Claims (10)
1. absorb the method for transition metal impurity in silicon wafer or silicon device for one kind, at room temperature silicon wafer or silicon device are carried out to dosage and be less than 5000Gy low dosage electron irradiation, transition metal impurity in silicon wafer district to be cleaned or silicon device active area is spread near gettering defect area, thereby reduce the concentration of the transition metal impurity in silicon wafer district to be cleaned or silicon device active area; Wherein, described silicon wafer district to be cleaned refers to the region that the degree of depth is less than 5 microns under silicon wafer surface; Near gettering defect area described refers to the gettering defect area that is less than 3 microns with silicon wafer district to be cleaned or silicon device active area Edge Distance.
2. the method for claim 1, it is characterized in that, on the basis in native defect district, silicon wafer or silicon device are carried out after electron irradiation, if cannot reach the gettering effect of expection, the native defect district of silicon wafer or silicon device is transformed or introduces new defect area, and then carry out electron irradiation, finally meet gettering requirement.
3. method as claimed in claim 2, it is characterized in that, adopt one or more in following method to transform near native defect district silicon wafer district to be cleaned or silicon device active area: at silicon wafer or do not encapsulate that silicon device surface is cleaned, oxidation or Passivation Treatment; Change the parameter that device manufacturing processes intermediate ion injects and/or anneals.
4. method as claimed in claim 2, is characterized in that, adopts one or more in following method near silicon wafer district to be cleaned or silicon device active area, to introduce new defect area: to sandblast, wear and tear in the surface at silicon wafer or silicon device; The various ditches of etching, groove, hole; Implantation or bombardment; Plasma treatment; Carry out laser or incoherent light irradiation; The diffusion adding and/or alloy process.
5. the method for claim 1, is characterized in that, described electron irradiation adopts electron accelerator or β ray radiation source to carry out.
6. method as claimed in claim 5, is characterized in that, described β ray radiation source is
32p,
90sr,
90y or
147pm.
7. method as claimed in claim 5, is characterized in that, the energy of electron irradiation is 0.01～100MeV, and dose rate is 1～1000Gy/s, and irradiation dose is 1～5000Gy.
8. method as claimed in claim 7, is characterized in that, the irradiation dose of electron irradiation is 1～1000Gy.
9. method as claimed in claim 8, is characterized in that, the irradiation dose of electron irradiation is 1～500Gy.
10. method as claimed in claim 7, is characterized in that, the energy of electron irradiation is 0.1～10MeV.
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Cited By (8)
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|---|---|---|---|---|
| CN104882377A (en) * | 2015-04-21 | 2015-09-02 | 北京大学 | Method of sucking and removing metal impurity in silicon material at room temperature |
| CN106469650A (en) * | 2015-08-14 | 2017-03-01 | 株式会社迪思科 | The processing method of chip and electronic device |
| CN106910680A (en) * | 2015-12-23 | 2017-06-30 | 北京大学 | The method that metallic atom diffusion in GaAs is encouraged under room temperature environment |
| CN106910681A (en) * | 2015-12-23 | 2017-06-30 | 北京大学 | A kind of method that metallic atom diffusion in GaAs is encouraged under room temperature environment |
| CN107068806A (en) * | 2017-04-19 | 2017-08-18 | 常州时创能源科技有限公司 | The method for eliminating polycrystalline silicon battery plate interior metal complex |
| CN107615470A (en) * | 2015-05-20 | 2018-01-19 | 信越半导体株式会社 | The manufacture method and evaluation method of silicon epitaxial wafer |
| CN113257953A (en) * | 2021-04-18 | 2021-08-13 | 安徽华晟新能源科技有限公司 | Gettering method and phosphorus gettering device for N-type silicon wafer |
| CN115188825A (en) * | 2022-07-04 | 2022-10-14 | 弘大芯源(深圳)半导体有限公司 | Method for manufacturing radiation-resistant metal oxide semiconductor field effect device and manufacturing method thereof |
Citations (5)
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| CN113257953A (en) * | 2021-04-18 | 2021-08-13 | 安徽华晟新能源科技有限公司 | Gettering method and phosphorus gettering device for N-type silicon wafer |
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