CN103780238B - Has the infrared ray electric switch of automatic dimming function - Google Patents
Has the infrared ray electric switch of automatic dimming function Download PDFInfo
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- CN103780238B CN103780238B CN201210407352.XA CN201210407352A CN103780238B CN 103780238 B CN103780238 B CN 103780238B CN 201210407352 A CN201210407352 A CN 201210407352A CN 103780238 B CN103780238 B CN 103780238B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 238000011068 load Methods 0.000 claims abstract description 78
- 230000001276 controlling effect Effects 0.000 claims abstract description 9
- 230000000051 modifying Effects 0.000 claims description 28
- 230000005611 electricity Effects 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 11
- 230000003287 optical Effects 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 230000001960 triggered Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 210000001367 Arteries Anatomy 0.000 claims description 2
- 210000003462 Veins Anatomy 0.000 claims description 2
- 230000001131 transforming Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 230000035807 sensation Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 230000001360 synchronised Effects 0.000 description 5
- 238000010616 electrical installation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000036633 rest Effects 0.000 description 2
- FKDHHVKWGRFRTG-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine Chemical compound [N-]1OC(=N)C=[N+]1N1CCOCC1 FKDHHVKWGRFRTG-UHFFFAOYSA-N 0.000 description 1
- 210000003491 Skin Anatomy 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 230000001808 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000750 progressive Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Abstract
The invention discloses a kind of infrared ray electric switches having automatic dimming function, this infrared ray electric switch is for controlling the on-state rate between load and power supply, and this infrared ray electric switch includes controllable semiconductor switch element, infrared light transducer[sensor and microcontroller.Controllable semiconductor switch element is electrically connected between load and power supply.Infrared light transducer[sensor exports infrared light sensing signal.Microcontroller is electrically connected between controllable semiconductor switch element and infrared light transducer[sensor, this microcontroller controls the cut-off and conducting of controllable semiconductor switch element according to this according to this infrared light sensing signal.Wherein, when controllable semiconductor switch element conductive, time span of the microcontroller according to infrared light sensing signal controls power supply supplied to the electrical power size loaded according to this.
Description
Technical field
The present invention is switched about a kind of infrared ray electric, and having the infrared of automatic dimming function in particular to a kind of
Line electric switch.
Background technology
Machinery electric switch is engagement or separation based on two panels conductive metal, generates short circuit or open circuit respectively.Such machine
Tool formula electric switch be typically operated with manual contact, and in switch engage when, since the high current of moment will produce fire
Flower or electric arc, therefore be not suitable in the space for having gas explosion doubt.
However, controllable semiconductor switch element, for example, two-way controllable triode (Triac), in conducting, two is defeated
Go out the voltage difference of electrode close to no-voltage, and in cut-off, the electric currents of two electrodes is flowed through close to zero current.Therefore, solid-state
Electronics electric switch utilizes the electrical characteristics of above-mentioned two-way controllable triode, and controls two-way controllable triode according to this by trigger circuit
Conducting or power-off.Since the efficiency of solid-state electronic electric switch is similar to machinery electric switch, but solid-state electronic electric switch
It the channel of main electrical current, therefore can be to avoid the generation of spark or electric arc due to no mechanical engagement.
The implementation technology that there are many existing solid-state electronic electric switches, such as patent US 4, one disclosed in 322,637
Kind triggers the technology of two-way controllable triode ON with optical coupling element, or is taken off in such as patent US 6,285,140B1
A kind of microcontroller (microcontroller unit, MCU) shown combines the technology of zero-crossing detector, and by microcontroller
The trigger signal synchronous with AC power is generated, to control the conducting of two-way controllable triode, transmission electric power to light-emitting diodes
Pipe.However, above-mentioned solid-state electronic electric switch is substantially only used as the short circuit between load and AC power or open circuit connection.
In addition to this, either machinery electric switch or solid-state electronic electric switch, are usually provided with spring button, and pass through
Hand presses above-mentioned button to convert conducting or off-position.However, in many workplaces, for example, kitchen or hospital
Workbench is not suitable for directly touching electric switch because hand stains.
Invention content
The object of the present invention is to provide a kind of infrared ray electric switch, this infrared ray electric switch is switched in a manner of optical sensor
ON/OFF and modulation light-source brightness, and one group of infrared light transducer[sensor is included at least, one group of microcontroller and a controllable semiconductor are opened
Element is closed, wherein controllable semiconductor switch element series load and is connected to power supply.
The embodiment of the present invention provides a kind of infrared ray electric switch, this infrared ray electric switch is connected between load and power supply,
And for controlling the on-state rate between load and power supply.It includes controllable semiconductor switch element that this infrared ray electric, which switchs, infrared
Optical sensor and microcontroller.Controllable semiconductor switch element is electrically connected between load and power supply.Infrared light transducer[sensor
The sensing range for whether entering infrared light transducer[sensor according to entity, exports infrared light sensing signal according to this.Microcontroller electrically connects
It is connected between controllable semiconductor switch element and infrared light transducer[sensor, this microcontroller infrared light sensing letter above-mentioned according to this
Number, the cut-off and conducting of controllable semiconductor switch element are controlled according to this.Wherein, micro- when controllable semiconductor switch element conductive
Time span of the controller according to infrared light sensing signal controls power supply supplied to the electrical power size loaded according to this.
The embodiment of the present invention provides a kind of infrared ray electric switch, this infrared ray electric switch be connected to load and DC power supply it
Between, and for controlling the on-state rate between load and DC power supply.This infrared ray electric switch includes that unidirectional controllable semiconductor is opened
Close element, infrared light transducer[sensor and microcontroller.Unidirectional controllable semiconductor switch element is electrically connected at load and direct current
Between source.Whether infrared light transducer[sensor enters the sensing range of infrared light transducer[sensor according to entity, exports infrared light sensing according to this
Signal.Microcontroller is electrically connected between unidirectional controllable semiconductor switch element and infrared light transducer[sensor, this microcontroller according to
According to above-mentioned infrared light sensing signal, pulse width modulation voltage signal is generated, controls unidirectional controllable semiconductor switch member according to this
The cut-off or conducting of part.Wherein, when unidirectional controllable semiconductor switch element conductive, microcontroller is according to infrared light sensing signal
Time span when low potential controls direct current power supply to the electrical power size of load according to this.
The embodiment of the present invention provides a kind of infrared ray electric switch, this infrared ray electric switch be connected to load and AC power it
Between, and for controlling the on-state rate between load and AC power.It includes multiple relay elements that this infrared ray electric, which switchs, infrared
Optical sensor and microcontroller.The multiple relay element is mutually in parallel so that the multiple relay is electrically connected at
Between load and AC power.Whether infrared light transducer[sensor enters the sensing range of infrared light transducer[sensor according to entity, defeated according to this
Go out infrared light sensing signal.Microcontroller is electrically connected between infrared light transducer[sensor and the multiple relay element, this micro-control
Device processed generates zero potential voltage or high-potential voltage, controls respectively according to this multiple according to above-mentioned infrared light sensing signal
The open circuit of relay element or short circuit.
The embodiment of the present invention provides a kind of infrared ray electric switch, this infrared ray electric switch be connected to load and AC power it
Between, and for controlling the on-state rate between load and AC power.This infrared ray electric switch includes two-way controllable semiconductor switch
Element, infrared light transducer[sensor, zero-crossing detector and microcontroller.Two-way controllable semiconductor switch element is electrically connected at negative
It carries between AC power.Whether infrared light transducer[sensor enters the sensing range of infrared light transducer[sensor according to entity, exports according to this
Infrared light sensing signal.Zero-crossing detector is electrically connected AC power.Microcontroller is electrically connected at infrared light transducer[sensor, mistake
Between zero detector and two-way controllable semiconductor switch element.This microcontroller is according to above-mentioned infrared light sensing signal, production
Raw zero potential voltage or zero crossing delay voltage pulse, control the cut-off or conducting of two-way controllable semiconductor switch element according to this.
Wherein, when two-way controllable semiconductor switch element conductive, microcontroller according to infrared light sensing signal when the low potential when
Between length, according to this control AC power supplied to load electrical power size.In short, it is a feature of the present invention that with micro-control
The program of device processed understands infrared light sensing signal, an operation interface contactless between user and electric switch is constituted, with evidence
To implement the mode of operation of at least two electric switches.
For the enabled feature and technology contents for being further understood that the present invention, please refer to below in connection with the present invention specifically
Bright and attached drawing, but these explanations are intended merely to illustrate the present invention with institute's accompanying drawings, rather than the interest field of the present invention is appointed
What limitation.
Description of the drawings
Fig. 1 is that the infrared ray electric switch of the present invention is used in the block diagram of AC power.
Fig. 2 is that the infrared ray electric switch of the present invention is used in the circuit implementation schematic diagram of AC power.
Fig. 3 A are schematic diagram of infrared light transducer[sensor when practical operation in the infrared ray electric switch of the present invention.
Fig. 3 B are the waveform diagram of the infrared light sensing signal of the present invention.
Fig. 4 is the step flow chart of the program of the microcontroller in the infrared ray electric switch of the present invention.
Fig. 5 is electricity of the infrared ray electric switch of present invention when switcheding on/off the infrared ray electric in pattern and switching in cut-off
Corrugating figure.
Fig. 6 is electricity of the infrared ray electric switch of present invention when switcheding on/off the infrared ray electric in pattern and switching in conducting
Corrugating figure.
Fig. 7 is the voltage waveform for the infrared ray electric switch that the infrared ray electric of the present invention switchs in modulation electrical power pattern
Figure.
Fig. 8 A are that the infrared ray electric switch of the present invention is used in the block diagram of DC power supply.
Fig. 8 B are the voltage oscillogram of the pulse width modulation voltage signal of the present invention.
Fig. 9 is that the infrared ray electric switch of the present invention is used in another block diagram of AC power.
Figure 10 is implementation schematic diagram of the infrared ray electric switch application in general electrical installation of the present invention.
Wherein, the reference numerals are as follows：
1,1',1"：Infrared ray electric switchs；
11,11',11"：Infrared light transducer[sensor；
110：Timer；
112,114：Amplifier；
PD：Photodiode；
IR_LED：Infrared light-emitting diode；
12,12',12"：Microcontroller；
13：Zero-crossing detector；
14：Two-way controllable semiconductor switch element；
T1：Two-way controllable triode；
14'：Unidirectional controllable semiconductor switch element；
15a,15b,15c：Relay；
16b,16c：Impedance；
2,2',2"：Load；
2a~2g：General electrical installation；
3,3"：AC power；
3'：DC power supply；
C1~C4：Capacitance；
D1~D3, Dz：Diode M1, M2, Q1：Transistor；
R1~R15：Resistance；
pin_1,pin_3,pin_10：Stitch；
VDD：Voltage source；
H,L：Electric potential signal；
Ts,T2：Time span；
T1：Period；
To：Preset time；
tD：Time delay；
ton：Turn-on time；
S1~S10：Steps flow chart.
Specific implementation mode
Refering to fig. 1, Fig. 1 is that the infrared ray electric switch of the present invention is used in the side of AC power to controllable semiconductor switch element
Block diagram.As shown in Figure 1, infrared ray electric switch 1 is connected with load 2, and it is connected to AC power 3, to control the transmission of AC power 3
Electrical power to load 2.This infrared ray electric switch 1 include at least one group of infrared light transducer[sensor, 11, one groups of microcontrollers (MCU) 12,
Zero-crossing detector 13 and a two-way controllable semiconductor switch element 14.In Fig. 1, infrared light transducer[sensor 11 is electrically connected micro-
One stitch of controller 12, to transmit infrared light sensing signal to microcontroller 12.Zero-crossing detector 13 electrically connects
Another stitch of microcontroller 12 and a conducting wire of AC power 3 are connect, to generate the signal synchronous with AC power 3, and
Above-mentioned synchronizing signal is input to microcontroller 12.Microcontroller 12 is electrically connected to another stitch and two-way is controllably partly led
The coordination electrode of body switch element 14 uses transmission voltage pulse to control the electrical shape of two-way controllable semiconductor switch element 14
State.
Infrared light transducer[sensor 11 exports infrared light sensing signal to microcontroller 12, and via the write-in journey in microcontroller
After sequence understands this infrared light sensing signal, microcontroller 12 is made to execute at least two operating modes according to this.
One of which operating mode is to switched on/off pattern, the sense that microcontroller 12 is sent out according to infrared light transducer[sensor 11
Survey signal so that microcontroller 12 in an alternating manner, sequentially switches the conducting and cut-off of two-way controllable semiconductor switch element 14.
In addition, in this operating mode, microcontroller 12 is by output voltage pulse signal, to trigger two-way controllable semiconductor switch member
The conducting of part 14, and definite value electrical power is transmitted to load 2, either, microcontroller 12 exports zero potential voltage, causes two-way
Controllable semiconductor switch element 14 ends, and stops transmission electric power to load 2.
Another operating mode is modulation electrical power pattern, and microcontroller 12 is exported same according to zero-crossing detector 13
Signal is walked, generates the phase delay voltage pulse synchronous with AC power 3 according to this, and in the positive half cycle of AC power 3 and negative half
The appropriate time point in week triggers the conducting of two-way controllable semiconductor switch element 14, and is exported according to infrared light transducer[sensor 11
Infrared light sensing signal, continuously change the size of the conduction phase of two-way controllable semiconductor switch element 14, to transmit difference
Electrical power to load 2.In addition, preceding two addressed kind operating mode, can pass through an entity (being, for example, hand, foot or trunk)
Stretch into infrared light sensing signal produced by the sensing range of infrared light transducer[sensor 11, come select execute switched on/off pattern or
The pattern of modulation electrical power.
Coordinate Fig. 1, refering to Fig. 2.Fig. 2 is that the infrared ray electric switch of the present invention is used in the circuit implementation signal of AC power
Figure.As shown in Fig. 2, infrared ray electric switch 1 is connected with load 2 and AC power 3.AC power 3, by capacitance C2 decompression with
The rectification of diode D1, D2 and Dz, generate make circuit can normal operation voltage source VDD.Infrared light transducer[sensor 11 is with crystal
For pipe M2 as output stage, the drain electrode of transistor M2 is electrically connected the stitch pin_3 of microcontroller 12, is believed with transmitting infrared light sensing
Number arrive microcontroller 12.
Zero-crossing detector 13 is made of transistor Q1, and the collector of wherein transistor Q1 is electrically connected microcontroller 12
The base stage of stitch pin_10, transistor Q1 are led via one that a resistance R3 and a diode D3 are connected to AC power 3
Line.In the positive half cycle of AC power 3, transistor Q1 saturation conductions, the voltage of the collector of transistor Q1 is close to zero potential；?
When the negative half period of AC power 3, transistor Q1 cut-offs, the voltage source VDD of the current collection extremely high potential of transistor Q1.Control exchange
Therefore the sine wave of power supply 3, zero-crossing detector 13 are exported the square wave and a high electricity of a low potential by the collector of transistor Q1
The square wave of position, it is synchronous with AC power 3 according to this, and by the stitch pin_10 of above-mentioned square wave input to microcontroller 12, anticipate
Justice further illustrates later.In in practice, two-way controllable semiconductor switch element 14 can be a two-way controllable triode
T1, microcontroller 12 are electrically connected to the grid of two-way controllable triode T1 with stitch pin_1, control two-way controllable triode T1
Conducting whether or the two-way controllable triode T1 of adjustment conducting degree, but not limited to this.
Referring again to Fig. 2, infrared light transducer[sensor 11 includes radiating circuit and receiving circuit.In radiating circuit part, one red
UV light-emitting diode IR_LED is concatenated into the drain electrode of a transistor M1, the grid of this transistor M1 and timer 110
Output end is electrically connected.In in practice, timer 110 can be 555 timers, this 555 timer exports about 3kHz frequencies
Square-wave voltage makes the infrared light of infrared light-emitting diode IR_LED output squares with the drain current of modulation transistor M1,
Using the light source as sensing.
In receiving circuit part comprising a photodiode PD, the amplifier 112 of two-stage series connection and 114 and one
A transistor M2.If before addressed, the drain electrode of transistor M2 is electrically connected to the stitch pin_3 of microcontroller 12.Photodiode
PD constitutes infrared light detection circuit with amplifier 112, and 112 output end of amplifier is connected to amplifier 114.In in practice, amplify
Device 112 and 114 can be operational amplifier LM324, and amplifier 114 and resistance R7~10 are combined as a kind of Shi Mite
(Schmitt) trigger circuit, wherein this Shi Mite trigger circuit tool there are one critical voltage, this critical voltage be by resistance R8 and
The bleeder circuit of R9 compositions generates.
Photodiode PD is to receive the infrared light of radiating circuit, if the electric potential signal value of amplifier 112 is more than aforementioned
And critical voltage value, then amplifier 114 generate a high potential signal, this voltage signal is added in the grid of transistor M2, and
It causes transistor M2 to be connected, therefore, a low-potential signal close to zero, low-potential signal is exported from the drain electrode of transistor M2
Time span it is related with the time for sensing infrared light.
In addition, if photodiode PD is not received by infrared light, the electric potential signal value of this i.e. amplifier 112 is less than critical
Voltage value, the permanent output of amplifier 114 close to no-voltage signal to the grid of transistor M2, and cause the cut-off of transistor M2,
Therefore, a high potential signal, voltage level VDD are exported from the drain electrode of transistor M2.In other words, the microcontroller of Fig. 2
Whether the stitch pin_3 of device 12 has sensor operation according to infrared light transducer[sensor 11, and is respectively received a low-potential signal or one
High potential signal, the wherein time span of low-potential signal are about the time for sensing infrared light.
In other words, microcontroller 12, can be by judging that this infrared light sensing is believed when detecting infrared light sensing signal
Time span number when low potential executes above two operating mode according to this, wherein an operating mode is two-way controllable in order to control
The cut-off and conducting of thyristor 14, another operating mode are tune when two-way controllable semiconductor switch element 14 is connected
The conducting degree of this whole two-way controllable semiconductor switch element 14.In other words, it is led in two-way controllable semiconductor switch element 14
When logical, microcontroller 12 can control AC power 3 according to this supplied to load 2 according to the time span of infrared light sensing signal
Electrical power size.Coordinate Fig. 2, also referring to infrared in the infrared ray electric switch that Fig. 3 A and Fig. 3 B, Fig. 3 A are the present invention
Schematic diagram of optical sensor when practical operation；Fig. 3 B are the waveform diagram of the infrared light sensing signal of the present invention.Such as Fig. 3 A
Shown, Fig. 3 A describe the essential structure of infrared light transducer[sensor 11, one of infrared light-emitting diode IR_LED and one it is photosensitive
Diode PD is arranged in parallel.It is arranged close to this when with hand, the infrared light of light emitting diode IR_LED is scattered from the skin surface of hand
It goes out and possibly into the light receiving surface of photodiode PD.
As shown in Figure 3B, Fig. 3 B are the output voltage signal of infrared light transducer[sensor 11.Substantially, if photodiode PD does not have
Have when receiving the intensity deficiency from the infrared light of wrist-watch area scattering or received infrared light, infrared light transducer[sensor 11
Transistor M2 drain electrode export a high potential signal H, size VDD.One " appropriately distance ", if photosensitive two pole
Pipe PD receives the infrared light scattered out from hand, and the electric potential signal value that intensity causes amplifier 112 to be exported is more than amplification
The critical voltage value of device 114, amplifier 114 thus trigger, and generate high-potential voltage, and driving transistor M2 conducting, then from
The low-potential signal L of the drain electrode output one about zero of M2.In other words, when infrared light transducer[sensor 11 sense entity (such as
For hand, foot or trunk) enter the infrared light transducer[sensor 11 sensing range when, infrared light transducer[sensor 11 output belongs to low potential
Infrared light sensing signal, when entity leaves the sensing range of infrared light transducer[sensor 11, the output of infrared light transducer[sensor 11 belongs to high
The infrared light sensing signal of current potential.
This " appropriately distance " can be defined as " the effective sensing range " of infrared light transducer[sensor 11.In addition, Fig. 3 B's is low
The time span Ts of electric potential signal L is approximately equal to the time that hand stops " effective sensing range " herein, and size is about that zero is several extremely
Several seconds.When mobile hand leaves this " effective sensing range ", the output of infrared light transducer[sensor 11 becomes high potential from low potential.It is red
The output electric signal of outer optical sensor 11 is two bit signals, can sentence via the program of microcontroller 12 if Fig. 3 B are described
It reads, the foundation as operation infrared ray electric switch 1.
Coordinate the step flow chart of the program of the microcontroller in the infrared ray electric switch that Fig. 2 and Fig. 3, Fig. 4 are the present invention.
As shown in figure 4, in microcontroller 12, the program of write-in read-only memory (read only memory, ROM) includes several work
Loop, and start from the position the loop for the pattern that switchedes on/off (step S1~step S6).The stitch pin_3 of microcontroller 12
The voltage signal transmitted from infrared light transducer[sensor 11 is received, the wherein time span Ts of low-potential signal is that hand rests on sensing
The time of distance.
The program of microcontroller 12 is since the loop (step S1~step S2) that infrared ray electric switch 1 ends.Microcontroller
The program of device 12 scans the current potential (step S2) of stitch pin_3, if high potential, the program of microcontroller 12 stays in switching device
The loop (step S1~step S2) of 1 cut-off, if low potential, program jumps into loop (the step S3 of the conducting of infrared ray electric switch 1
~step S6).In the loop (step S3~step S6) that infrared ray electric switch 1 is connected, the program of microcontroller 12 scans pin_3
Current potential enter step S5 from step S4 if detecting low potential, the length of interpretation time span Ts and with one it is default when
Between To make comparisons.In in practice, preset time T o is not limited between 1 to 2 second with this range.
In step s 5, if time span Ts is less than preset time T o, S6 is entered step, whether is detection stitch pin_3
High potential, if so, program rebound infrared ray electric switch 1 end loop (step S1~step S2), if it is not, program stay in it is infrared
The loop (step S3~step S6) that line electric switch 1 is connected.
In short, in the big loop (step S1~step S6) switcheded on/off, with hand, short stay is infrared in sensing back and forth
The sensing range of optical sensor 11 can switch the cut-off of infrared ray electric switch 1 or conducting repeatedly, this is the work switcheded on/off
Operation mode.
In step s 5, if time span Ts is more than preset time T o, S7 is entered step, and interpretation time span Ts is
The no preset time T o for being more than n times, wherein n >=2, if it is not, then returning to loop (the step S3~step of the conducting of infrared ray electric switch 1
Rapid S4), if so, jumping into the loop (step S8~step S10) of modulation electrical power pattern from step S7.Fig. 4 is not explicitly shown
The details of modulation electrical power (S8) flow, briefly, the program of microcontroller 12 scans the current potential of stitch pin_3, if detecting
Multiple low-potential signals, time span Ts and Ts ' is different in size, and time span Ts and Ts ' are less than preset time nTo
When, if microcontroller 12 become larger in a continuous manner either become smaller electrical power transmission reach maximum or minimum electrical power after,
Then no longer the low potential detected is responded.In the loop (step S8~step S10) of modulation electric work, if detecting, the time is long
When spending Ts more than n To, the program of microcontroller 12 is i.e. from modulation electrical power pattern (step S8~step S10) rebound infrared ray
The loop (step S1~step S2) that electric switch 1 ends.Then, above-mentioned flow is repeated.
According to the embodiment of Fig. 2 circuits, can preset time T o be set as to 2 seconds and n is set as 2.Therefore, complex chart 4
The step flow of microcontroller 12 is less than 2 seconds by the time span Ts of low potential (that is, hand rests on if stitch pin_3 is detected
The time of sensing range is less than 2 seconds) when, microcontroller 12 does not change operating mode；If stitch pin_3 detect low potential when
Between length Ts be more than 4 seconds (that is, hand rest on sensing range time be more than 4 seconds) when, microcontroller 12 convert operating mode.
In other words, if time span Ts of infrared light sensing signal when low potential is less than preset time T o, microcontroller 12
The transformation of operating mode is not made；If time span Ts of infrared light sensing signal when low potential is more than preset time T o,
Microcontroller 12 is converted in an alternating manner between above two operating mode.
Coordinate Fig. 2 and Fig. 4, also referring to Fig. 5 to Fig. 7, Fig. 5 is the infrared ray electric switch of the present invention in switcheding on/off
Voltage oscillogram of infrared ray electric switch when cut-off in pattern；Fig. 6 is the infrared ray electric switch of the present invention in switcheding on/off
Voltage oscillogram of infrared ray electric switch when conducting in pattern；Fig. 7 is that the infrared ray electric of the present invention is switched in modulation electric work
The voltage oscillogram of infrared ray electric switch in rate pattern.From top to bottom the voltage waveform of sequential is respectively to hand over to Fig. 5 to Fig. 7
The signal of the output of the sine wave, zero-crossing detector 13 in galvanic electricity source 3, the signal exported from the stitch pin_1 of microcontroller 12
And in the voltage waveform for loading 2 two endpoints, the program for illustrating microcontroller 12 is used with infrared ray electric switch 1 above-mentioned
Two operating mode interactions.Wherein, the output of zero-crossing detector 13 has such as been addressed, has been square-wave signal, is sent to microcontroller above
The stitch pin_10 of device 12, the trigger signal that the external control as microcontroller 12 interrupts.In addition, from the stitch of microcontroller 12
The signal of pin_1 outputs, is transmitted to the grid of two-way controllable triode T1, to control the conducting shape of two-way controllable triode T1
State.
The program of microcontroller 12 is switcheding on/off and the loop of modulation electrical power pattern respectively, is interrupted using external control
Technology, the voltage pulse synchronous with AC power 3 is generated, for this purpose, the electricity of the program preset stitch pin_10 of microcontroller 12
Position changes the signal interrupted for triggering external control.Because of the square-wave signal of zero-crossing detector 13, the high/low potential change time
Point is the zero crossing of sine wave 3.Therefore, the program of microcontroller 12 automatically the zero crossing of AC power 3 trigger external control in
Disconnected, meaning is further in Fig. 6 and Fig. 7 explanations.
Coordinate Fig. 2 and Fig. 4, refering to Fig. 5, loop (step S1 that the program of microcontroller 12 is ended from infrared ray electric switch 1
~step S2) start.The program of microcontroller scans the current potential of stitch pin_3, if stitch pin_3 is high potential, micro-control
Device 12 processed exports no-voltage from stitch pin_1.Two-way controllable triode T1 is because grid ends for zero potential so that is loading
The voltage at 2 both ends is zero.
Coordinate Fig. 2 and Fig. 4, refering to Fig. 6, in the loop (step S1~step S2) that infrared ray electric switch 1 ends, microcontroller
The program of device 12 scans the current potential of stitch pin_3.If detecting, stitch pin_3 is low potential, the program of microcontroller 12
Jump to the loop (step S3~step S4) of the conducting of infrared ray electric switch 1.In this loop (step S3~step S4), micro-control
The program of device 12 processed scans the voltage signal of stitch pin_10, and the potential change time point of the square-wave signal of stitch pin_10 occurs
External control interrupts, and is not carried out other programs in this interrupt routine, but is immediately returned to main program.Such programming,
It is the zero crossing for the time occurred using interrupt routine being alternating voltage.The program of microcontroller is then occurred with interrupt routine
Time on the basis of, by a time delay tD, zero crossing is generated by program and is delayed voltage pulse, and is defeated from stitch pin_1
Go out.The signal exported by stitch pin_1 i.e. voltage pulse thus, respectively apart from one time delay tD of zero crossing, and it is out of the ordinary
AC power 3 just and negative half period generate pulse, be allowed to be connected for triggering two-way controllable triode T1, transmission exchange electric work
Rate to load 2.The AC power 3 of compares figure 6 and the signal of stitch pin_1 outputs, in the voltage waveform for loading 2 two endpoints
The average electrical power of figure, load 2 is proportional to the turn-on time ton of two-way controllable triode T1.
In the loop (step S3~step S4) that infrared ray electric switch 1 is connected, the time of zero crossing delay voltage pulse
It is fixed value to postpone tD, then the average electrical power for loading 2 is also fixed value.Generally, a minimum time delay tD is designed, is made
The turn-on time ton of two-way controllable triode T1 is maximum, to transmit maximum average electrical power to load 2.If load 2 is electric light
Source, when alternately switching infrared ray electric switch 1 ends or is connected, light source is then respectively with most dark or most bright luminance fluctuation.Yu Shi
In business, load 2 can be the module of a kind of red-hot type light bulb, fluorescent lamp, alternating-current light emitting diode or a light emitting diode
Equal electric light sources, wherein needing the output port end for being connected across full-wave bridge if load 2 is the module of light emitting diode.
Coordinate Fig. 2 and Fig. 4, refering to Fig. 7, in larger loop (the step S3~step S6) that infrared ray electric switch 1 is connected,
The program of microcontroller 12 scans the current potential of stitch pin_3.If detecting, the time span Ts that stitch pin_3 is low potential is big
It is more than or equal to 1 in nTo, wherein n, the program of microcontroller 12 jumps to the loop (step of 1 modulation electrical power of infrared ray electric switch
S8~step S10).In this loop (step S8~step S10), the program of microcontroller 12 scans the voltage of stitch pin_10
Signal generates the zero crossing delay voltage pulse with time delay tD similar to Fig. 6 in a manner of triggering external control and interrupt,
It is exported from stitch pin_1.This simultaneously, the program of microcontroller 12 scans the current potential of stitch pin_3, if detecting time span Ts
The low-potential signal to differ in size, then the program of microcontroller in a continuous manner, and according to the ratio of time span Ts, increase
The time delay tD of voltage pulse.After if time delay tD reaches a preset maximum value, the program of microcontroller 12
It does not continue to respond the low potential detected.Wherein, it is to shorten two-way controllable triode T1 to increase time delay tD
Turn-on time ton, to reduce the average electrical power for being transferred to load 2.Therefore, Fig. 7 is to illustrate that the present invention's is red with voltage waveform
For outside line electric switch 1 in modulation electrical power pattern, 12 program of microcontroller corresponds to infrared light sensing, transfers the time in a progressive way
Postpone tD.
Generally, if load 2 light emitting diodes, especially alternating-current light emitting diode (AC-LED), this two pole of AC light-emitting
There are one the cut-in voltage Vt for beginning to turn on electric current for pipe tool.When zero crossing delay voltage pulse is generated in the program of microcontroller 12
And when being exported from stitch pin_1, if the voltage value of AC power 3 is still below the cut-in voltage Vt of load 2, two-way controllable half
Conductor switch element 14 may not be triggered conducting.Accordingly, it is considered to load 2 cut-in voltage Vt, in design drawing 6 and Fig. 7
When zero crossing delay voltage pulse, it is necessary to time delay tD be limited in following range, to determine the stabilization of semiconductor element 14
Triggering：
to<tD<1/ (2f)-to,
Wherein to=(1/2 π f) sin-1 (Vt/Vm), f are the frequencies of AC power, and Vm is the voltage amplitude of AC power.
In addition to this, the system that idea of the invention can also be applied to DC power supply need only will be opened in controllable semiconductor
The program for closing element and microcontroller makees small change, and removes zero-crossing detector and can be realized.Please refer to Fig. 8 A, Fig. 8 A
The block diagram of DC power supply is used in for the infrared ray electric switch of the present invention.As shown in Figure 8 A, infrared ray electric switch 1 ' is connected to
Between load 2 ' and DC power supply 3 ', i.e., infrared ray electric switch 1 ', load 2 ' and DC power supply 3 ' are cascaded, via infrared
Line electric switch 1 ' controls DC power supply 3 ' and is transferred to electrical power to load 2 '.Compares figure 1 is wrapped in the infrared ray electric switch 1 ' of Fig. 8 A
Include infrared light transducer[sensor 11 ', microcontroller 12 ' and unidirectional controllable semiconductor switch element 14 '.In in practice, unidirectional controllable half
Conductor switch element 14 ' can be bipolar junction-type transistor (bipolar junction transistor, BJT) or gold
Category oxide semiconductor field effect transistor (metal-oxide-semiconductor field-effect transistor,
MOSFET), it can be light emitting diode or red-hot type light bulb to load 2 ', and but not limited to this.
Coordinate Fig. 3, refering to Fig. 8 A.The transmission of infrared light transducer[sensor 11 ' detects the infrared light sensing signal of movement in one's hands, as
The procedure selection operating mode of microcontroller 12 ' and the foundation of operation infrared ray electric switch 1 '.In the infrared of the pattern that switchedes on/off
In the case that line electric switch 1 ' ends, the program of microcontroller 12 ' sends out zero potential voltage to unidirectional controllable semiconductor switch member
The grid of part 14 ', for ending unidirectional controllable semiconductor switch element 14 '.In the infrared ray electric switch 1 for the pattern that switchedes on/off
In the case of conducting, the program of microcontroller 12 ' sends out pulse width modulation (pulse width modulation, PWM) electricity
It presses signal to the grid of unidirectional controllable semiconductor switch element 14 ', adjusts this unidirectional controllable semiconductor switch element 14 ' according to this
Conducting electric current, and definite value electrical power is transmitted to load 2 '.
It is the voltage oscillogram of the pulse width modulation voltage signal of the present invention refering to Fig. 8 B, Fig. 8 B.As shown in Figure 8 B, arteries and veins
It is square wave to rush width modulation voltage signal, including a zero potential voltage (or low-potential voltage) and a high-potential voltage,
The period of wherein pulse width modulation voltage signal is T1.When pulse width modulation voltage signal is in high potential, then unidirectionally may be used
It controls thyristor 14 ' to be connected, if time span when high potential is T2, via unidirectional controllable semiconductor switch member
The average electrical power that part 14 ' is transferred to load 2 ' is proportional to T2/T1, defined in δ=T2/T1 be pulse width modulation signal
Duty ratio (duty cycle).Generally, in the pattern that switchedes on/off, the program of microcontroller 12 ' generates pulse width modulation letter
Number, this pulse width modulation signal has maximum duty ratio, so that infrared ray electric switch 1 ' transmits maximum put down in conducting
Equal electrical power is to loading 2 '.In addition, in modulation electrical power pattern, the program of microcontroller 12 ' scans infrared light transducer[sensor 11 '
Signal, if detecting the low-potential signal of sensing, time span Ts is different in size, then the program of microcontroller 12 ' is temporally
The duty ratio of length Ts scale smaller pulse width modulation signals, to gradually reduce the electrical power for being transferred to load 2 '.
Generally, the size that conduction phase angle is controlled with two-way controllable semiconductor switch element 14, easily occurs high-order harmonic wave, and does
Disturb the efficiency of load.Idea of the invention can also be applied to AC power, but exclude two-way controllable triode T1 and zero passage
The use of spot detector 13.
Refering to Fig. 9, Fig. 9 is that the infrared ray electric switch of the present invention is used in another block diagram of AC power.Such as Fig. 9 institutes
Show, wherein infrared ray electric switch 1 " is connected between load 2 " and AC power 3 ", i.e., infrared ray electric switch 1 ", load 2 " and
AC power 3 " is cascaded.Compares figure 1, in the embodiment of Fig. 9, wherein infrared ray electric switch 1 " includes infrared light transducer[sensor
11 ", microcontroller 12 " and three relays (relay) 15a, 15b and 15c, wherein described three relays 15a, 15b with
And 15c is separately connected different impedance (electrical impedance), impedance is zero, 16b and 16c respectively, according to this
Form the branch of three different impedances.Described three relays 15a, 15b and 15c are mutually in parallel, and are connected to load
2 " and AC power 3 ", in other words, described three relays 15a, 15b and 15c are series at load 2 " and are electrically connected friendship
Galvanic electricity source 3.In in practice, load 2 " can be electric fan, alternating-current light emitting diode, fluorescent lamp or red-hot type light bulb.
The metal for driving each relay 15a, 15b and 15c is electrically connected with three stitch for microcontroller 12 "
The grid of oxide semiconductor field effect transistor.When three stitch of microcontroller 12 " export zero potential voltage to metal simultaneously
When oxide semiconductor field effect transistor, three relay 15a, 15b and 15c power-off, then infrared ray electric switch 1 " power off or
Open circuit.When a wherein stitch for microcontroller 12 " exports high-potential voltage signal to metal oxide semiconductcor field effect crystal
Guan Shi, remaining two stitch is zero potential, then corresponding unique relay is attracted conducting, the power-off of other two relay.Cause
This, according to the procedure operation of microcontroller 12 ", when first relay 15a is attracted, AC power 3 " directly transmits the first stage
AC power to load 2 "；When second relay 15b is attracted, AC power 3 " is transmitted via a series impedance 16b
The AC power of second stage to load 2 "；When third relay 15c1 is attracted, AC power 3 " is hindered via a series connection
The AC power of anti-16c transmission phase III is to loading 2 ".
Coordinate Fig. 3, refering to Fig. 9.The transmission of infrared light transducer[sensor 11 " detects the signal of movement in one's hands, as microcontroller 12 "
Procedure selection operating mode and operation infrared ray electric switch 1 " foundation.In the infrared ray electric switch 1 " for the pattern that switchedes on/off
In the case of cut-off, three stitch of microcontroller 12 " send out zero potential voltage to metal oxide semiconductcor field effect transistor
Grid, be used for cutoff relay 15a, 15b and 15c.The case where the infrared ray electric switch 1 " for the pattern that switchedes on/off is connected
Under, first stitch of microcontroller 12 " exports high-potential voltage, remaining two stitch exports zero potential voltage, relay 15a
It is attracted, transmits the AC power of first stage to loading 2 ".In modulation electrical power pattern, the program of microcontroller 12 " scans
The signal of infrared light transducer[sensor 11 ", if detecting the low-potential signal of sensing, the program of microcontroller 12 " sequentially respectively from
Second stitch or third branch stitch export high-potential voltage, remaining two stitch exports zero potential voltage, respectively drives according to this
Relay 15b or relay 15c are attracted, and change the electrical power for being transferred to load 2 ".In other words, microcontroller 12 " detects
Infrared light sensing signal, and according to this infrared light sensing signal, a zero potential voltage or a high-potential voltage are generated, according to this
Open circuit or the short circuit of the multiple relay 15a, 15b and 15c are controlled respectively.
0, Figure 10 is implementation schematic diagram of the infrared ray electric switch application in general electrical installation of the present invention refering to fig. 1.Such as
Shown in Figure 10, infrared ray electric of the invention switch can be applied in pendent lamp 2a, electric fan 2b, outdoor lights 2c, kitchen cabinets lamp 2d
With 2e, tables' lamp 2f and floor lamp 2g.In addition, infrared light transducer[sensor can use independent modular manner, it is placed on suitable position
It sets, then is wired to the microcontroller of infrared ray electric switch.In this way, can be more convenient to stretch out one's hand the sensing model of infrared light transducer[sensor
It encloses, to operate the on or off of electric light source, and dims when necessary.
Example the above is only the implementation of the present invention, but it is not to limit to the scope of the claims of the present invention.
Claims (13)
1. a kind of infrared ray electric switch, which is characterized in that be suitable for controlling the on-state rate between a load and a power supply, wherein
There is a cut-in voltage, the power supply to be supplied to the voltage value of the load to be cut more than or equal to this by infrared ray electric switch for the load
Enter voltage, which is triggered startup, and infrared ray electric switch includes：
One controllable semiconductor switch element, is electrically connected between the load and the power supply；
Whether one infrared light transducer[sensor, the sensing range of the infrared light transducer[sensor is entered according to an entity, and it is infrared to export one according to this
Light sensing signal；And
One microcontroller is electrically connected between the controllable semiconductor switch element and the infrared light transducer[sensor, the microcontroller
According to the infrared light sensing signal, the cut-off and conducting of the controllable semiconductor switch element are controlled according to this；
Wherein, when the controllable semiconductor switch element conductive, the microcontroller is long according to the time of the infrared light sensing signal
Degree controls the electrical power size that the power supply is supplied to the load according to this；
Wherein, in the microcontroller when detecting the infrared light sensing signal, by the time for judging the infrared light sensing signal
Length, executes one of two operating modes according to this, one of described two operating modes in order to control this controllably partly lead
The cut-off and conducting of body switch element, another operating mode are that this is adjusted when the controllable semiconductor switch element conductive controllably
The conducting degree of thyristor；
It is in the controllable semiconductor switch element when the microcontroller executes one of described two operating modes according to this
After the conducting degree for adjusting the controllable semiconductor switch element when conducting, the time span of the infrared light sensing signal is more than one
When preset time, which stops executing the operating mode.
2. infrared ray electric switch as described in claim 1, which is characterized in that the infrared light transducer[sensor senses entity entrance
When the sensing range of the infrared light transducer[sensor, which exports the infrared light sensing signal for belonging to low potential, when
When the entity leaves the sensing range of the infrared light transducer[sensor, which exports the infrared light sensation for belonging to high potential
Survey signal.
3. infrared ray electric as claimed in claim 2 switch, which is characterized in that if the infrared light sensing signal is when low potential
When time span is less than the preset time, which does not make the transformation of described two operating modes, if the infrared light sensing
When time span of signal when low potential is more than the preset time, which is to be opened in the controllable semiconductor
The conducting degree of the controllable semiconductor switch element is adjusted when closing element conductive, returns control controllable semiconductor switch member later
The cut-off of part and conduction mode.
4. infrared ray electric switch as claimed in claim 3, which is characterized in that the preset time is between 1 to 2 second.
5. infrared ray electric switch as claimed in claim 3, which is characterized in that detect the infrared light sensing letter in the microcontroller
Number when, time span of the microcontroller according to the infrared light sensing signal when the low potential controls this and controllably partly leads in order
The cut-off of body switch element is to conducting, then according to the condition of described two operating modes, adjusts the controllable semiconductor switch according to this
The conducting degree of element.
6. a kind of infrared ray electric switch, which is characterized in that it is suitable for controlling the on-state rate between a load and a DC power supply,
In, which there is a cut-in voltage, the power supply to be supplied to the voltage value of the load to be more than or equal to by infrared ray electric switch
The cut-in voltage, the load are triggered startup, and infrared ray electric switch includes：
One unidirectional controllable semiconductor switch element, is electrically connected between the load and the DC power supply；
Whether one infrared light transducer[sensor, the sensing range of the infrared light transducer[sensor is entered according to an entity, and it is infrared to export one according to this
Light sensing signal；And
One microcontroller is electrically connected between the unidirectional controllable semiconductor switch element and the infrared light transducer[sensor, the micro-control
Device processed generates a pulse width modulation voltage signal, controls the unidirectional controllable semiconductor according to this according to the infrared light sensing signal
The cut-off or conducting of switch element；
Wherein, when the unidirectional controllable semiconductor switch element conductive, the microcontroller is according to the infrared light sensing signal in low
Time span when current potential controls the direct current power supply to the electrical power size of the load according to this；
Wherein, in the microcontroller when detecting the infrared light sensing signal, by judging the infrared light sensing signal in low electricity
Time span when position executes one of two operating modes according to this, and one of described two operating modes are in order to control
The cut-off and conducting of the unidirectional controllable semiconductor switch element, another operating mode are in the unidirectional controllable semiconductor switch member
Part adjusts the conducting degree of the unidirectional controllable semiconductor switch element when being connected；
It is in the unidirectional controllable semiconductor switch when the microcontroller executes one of described two operating modes according to this
After the conducting degree for adjusting the controllable semiconductor switch element when element conductive, the time span of the infrared light sensing signal is big
When a preset time, which stops executing the operating mode.
7. infrared ray electric switch as claimed in claim 6, which is characterized in that the unidirectional controllable semiconductor switch element is bipolar
Property junction transistor or metal oxide semiconductcor field effect transistor.
8. infrared ray electric switch as claimed in claim 6, which is characterized in that the load is light emitting diode.
9. a kind of infrared ray electric switch, which is characterized in that it is suitable for controlling the on-state rate between a load and an AC power,
In, which there is a cut-in voltage, the AC power to be supplied to the voltage value of the load to be more than by infrared ray electric switch
Equal to the cut-in voltage, which is triggered startup, and infrared ray electric switch includes：
Multiple relay elements are electrically connected in multiple metal oxide semiconductcor field effect transistors, wherein each relay
Device element is driven by one of those metal oxide semiconductcor field effect transistors respectively, and multiple relay element
It is mutually in parallel so that multiple relay is electrically connected between the load and the AC power；
Whether one infrared light transducer[sensor, the sensing range of the infrared light transducer[sensor is entered according to an entity, and it is infrared to export one according to this
Light sensing signal；And
One microcontroller is electrically connected the infrared light transducer[sensor and respectively drives multiple metal oxygen of multiple relay element
Compound semiconductcor field effect transistor, the microcontroller generate a zero potential voltage or a high electricity according to the infrared light sensing signal
Position voltage controls cut-off or the conducting state of multiple metal oxide semiconductcor field effect transistor respectively, and control should respectively according to this
The cut-off or conducting of multiple relay elements；
Wherein, in the microcontroller when detecting the infrared light sensing signal, by judging the infrared light sensing signal in low electricity
Time span when position executes one of two operating modes according to this, and one of described two operating modes are in order to control
The conducting of one of the cut-off of those relay elements or those relay elements, another operating mode in order to control those after
Wherein another conducting of electric elements；
When the microcontroller execute according to this one of described two operating modes in order to control those relay elements cut
Only or after the conducting of one of those relay elements, the time span of the infrared light sensing signal is more than a preset time
When, which stops executing the operating mode.
10. infrared ray electric switch as claimed in claim 9, which is characterized in that the load is alternating-current light emitting diode.
11. a kind of infrared ray electric switch, which is characterized in that it is suitable for controlling the on-state rate between a load and an AC power,
Wherein, which there is a cut-in voltage, the AC power to be supplied to the voltage value of the load big by infrared ray electric switch
In equal to the cut-in voltage, which is triggered startup, and infrared ray electric switch includes：
One two-way controllable semiconductor switch element, is electrically connected between the load and the AC power；
Whether one infrared light transducer[sensor, the sensing range of the infrared light transducer[sensor is entered according to an entity, and it is infrared to export one according to this
Light sensing signal；
One zero-crossing detector is electrically connected the AC power；And
One microcontroller is electrically connected at the infrared light transducer[sensor, the zero-crossing detector and the two-way controllable semiconductor switch
Between element, which generates a zero potential voltage or zero crossing delay voltage arteries and veins according to the infrared light sensing signal
Punching, controls the cut-off or conducting of the two-way controllable semiconductor switch element according to this；
Wherein, when the two-way controllable semiconductor switch element conductive, the microcontroller is according to the infrared light sensing signal in low
Time span when current potential controls the electrical power size that the AC power is supplied to the load according to this；
Wherein, in the microcontroller when detecting the infrared light sensing signal, by judging the infrared light sensing signal in low electricity
Time span when position executes one of two operating modes according to this, and one of described two operating modes are in order to control
The cut-off and conducting of the two-way controllable semiconductor switch element, another operating mode are in the two-way controllable semiconductor switch member
Part adjusts the conducting degree of the two-way controllable semiconductor switch element when being connected；
It is in the two-way controllable semiconductor switch when the microcontroller executes one of described two operating modes according to this
After the conducting degree for adjusting the two-way controllable semiconductor switch element when element conductive, the time of the infrared light sensing signal is long
When degree is more than a preset time, which stops executing the operating mode.
12. infrared ray electric switch as claimed in claim 11, which is characterized in that the two-way controllable semiconductor switch element is double
To controllable triode.
13. infrared ray electric switch as claimed in claim 11, which is characterized in that the load is alternating-current light emitting diode or hair
The module of optical diode, the module of wherein light emitting diode are to be connected across the output port end of full-wave bridge.
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| US9345112B2 (en) * | 2013-03-09 | 2016-05-17 | Chia-Teh Chen | Microcontroller-based multifunctional electronic switch and lighting apparatus having the same |
| CN105208742A (en) * | 2015-10-23 | 2015-12-30 | 深圳迈睿智能科技有限公司 | AC LED light adjustment method and inductive light adjustment controller |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101072023A (en) * | 2006-05-09 | 2007-11-14 | 田蕾股份有限公司 | Infrared ray switching device |
| CN201393323Y (en) * | 2009-04-02 | 2010-01-27 | 柳延东 | Indoor lighting equipment switch intelligent controller |
| CN202190444U (en) * | 2011-08-04 | 2012-04-11 | 英飞特电子（杭州）有限公司 | Non-contact type light regulating signal generating device |
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| US6285140B1 (en) * | 1999-04-21 | 2001-09-04 | Pharos Innovations Inc. | Variable-effect lighting system |
| US8310163B2 (en) * | 2010-08-24 | 2012-11-13 | Chia-Teh Chen | Microcontroller-based lighting control system and method for lighting control |
| CN102209418B (en) * | 2011-06-28 | 2014-01-29 | 林万炯 | Dimming light emitting diode (LED) lamp and dimming method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101072023A (en) * | 2006-05-09 | 2007-11-14 | 田蕾股份有限公司 | Infrared ray switching device |
| CN201393323Y (en) * | 2009-04-02 | 2010-01-27 | 柳延东 | Indoor lighting equipment switch intelligent controller |
| CN202190444U (en) * | 2011-08-04 | 2012-04-11 | 英飞特电子（杭州）有限公司 | Non-contact type light regulating signal generating device |
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