CN103779193A - Nitride semi-conductor component based on diamond substrate and manufacturing method thereof - Google Patents
Nitride semi-conductor component based on diamond substrate and manufacturing method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 239000010432 diamond Substances 0.000 title claims abstract description 75
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 75
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 54
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 19
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 3
- 238000005498 polishing Methods 0.000 claims description 37
- -1 nitride compound Chemical class 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910021389 graphene Inorganic materials 0.000 claims description 14
- 230000026267 regulation of growth Effects 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 230000012010 growth Effects 0.000 abstract description 24
- 239000000463 material Substances 0.000 abstract description 24
- 230000008901 benefit Effects 0.000 abstract description 8
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 22
- 230000006872 improvement Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
The invention discloses a nitride semi-conductor component based on a diamond substrate and a manufacturing method thereof. The method includes the following steps of (S1) providing the diamond substrate, (S2) growing a first nitride semi-conductor layer on the diamond substrate in an HVPE method, and (S3) growing a second nitride semi-conductor layer on the first nitride semi-conductor layer in an MOCVD method. A dielectric layer does not need to be introduced, hear resistance of the interfaces of nitride semi-conductors and heat resistance of the interface of the diamond substrate are small, and the heat dissipation performance of a material is good; the nitride semi-conductor layers grow in the HVPE method and the MOCVD method, and accordingly the advantages of being high in growth speed, good in growth quality and the like are achieved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of nitride compound semiconductor device based on diamond substrate and preparation method thereof.
Background technology
Along with the continuous miniaturization of electronic product and high speed, reduction device thermal resistance improves its heat-sinking capability and becomes more and more urgent.In IC circuit, heat comprises transistor, resistance, electric capacity etc. from a lot of devices, and heat-sinking capability missionary society causes the quick rising of temperature.The rising of temperature can cause device performance degeneration, when serious, can cause component failure, and for example device burns or short circuit.Reduce thermal resistance, improve heat-sinking capability and be even more important for high-power and high-current device.The raising device adopting at present and the method for system radiating ability mainly contain: fan, heat sink, semiconductor chilling plate etc.Because system speed improves, power consumption increase will reach identical heat-sinking capability need to increase heat sink area, increases fan dimension and speed etc., and this contradicts with the miniaturization of equipment and system.
Gallium nitride heterojunction device is the wide band gap semiconductor device with high concentration two-dimensional electron gas, and therefore it has high output power density, high temperature resistant, high-breakdown-voltage.Because GaN materials chemistry bond energy is high, the physical and chemical performance of material is stable, and the HEMT based on AlGaN/GaN heterojunction has very strong Radiation hardness.Based on above advantage, AlGaN/GaN HEMT device can be widely used in the high frequency high-power component fields such as radar, communication and Aero-Space, and also has very big application potential in power electronic device field.For RF system, as radar and communication system, adopt GaN transistor can obtain good performance, but its service behaviour is also subject to the very big impact of thermal resistance.And most of thermal resistance comes from the thermocouple junctions position of base material and GaN transistor junction.And gallium nitride transistor based on diamond substrate, because diamond thermal resistance is little, heat-sinking capability is good, can significantly reduce device thermal resistance and improve heat-sinking capability, and then improve systematic function.RF system based on gallium nitride in diamond substrate can obtain more high power, more high efficiency and smaller szie.
The main method of preparing at present gallium nitride (GaN) on diamond (diamond) substrate has wafer bonding.Wafer bonding concrete grammar is as shown in Figure 1:
The first step, fits to nitride semiconductor layer 2 ' (as GaN layer) top by sacrificing protection layer 3 ';
Second step, removes substrate 1 ' (being preferably silicon substrate) by wet method or dry etching;
The 3rd step, by diamond substrate 4 ' and nitride semiconductor layer 2 ' bonding;
The 4th step, removes sacrificing protection layer 3 ', obtains nitride material in diamond substrate.
Before the 3rd stepping line unit closes, first with the medium coatings that thickness is nanometer scale, nitride semiconductor layer is processed, the method can cause the thermal resistance of interface larger, reduces device performance.
Therefore, for above-mentioned technical problem and improve one's methods, be necessary to provide a kind of nitride compound semiconductor device based on diamond substrate and preparation method thereof.
Summary of the invention
The object of the invention is to overcome the deficiency of gallium nitride material in above preparation diamond substrate, a kind of new nitride compound semiconductor device based on diamond substrate and preparation method thereof is provided.The invention solves nitride semiconductor layer and the large problem of diamond substrate interface thermal resistance, have advantages of that thermal resistance is little, good heat conductivity, surface smoothness be large.
Technical thought of the present invention is: growing nitride semiconductor layer in the diamond substrate of polishing, the growing method of nitride semiconductor layer adopts HVPE (hydride vapour phase epitaxy method) and MOCVD (metallo-organic compound chemical vapour deposition technique) to combine.It is high that the substrate surface growing nitride semiconductor of polishing obtains material evenness; The speed of growing nitride semi-conducting material is fast, thickness is large to adopt HVPE (hydride vapour phase epitaxy method) and MOCVD (metallo-organic compound chemical vapour deposition technique) to combine.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A preparation method for nitride compound semiconductor device based on diamond substrate, said method comprising the steps of:
S1, provide diamond substrate;
S2, in diamond substrate, adopt HVPE growth regulation mononitride semiconductor layer;
S3, on the first nitride semiconductor layer, adopt MOCVD growth regulation diammine semiconductor layer.
As a further improvement on the present invention, after described step S1, also comprise:
S02, diamond substrate is carried out to planarizing process.
As a further improvement on the present invention, described step S02 is specially:
Polishing is carried out in diamond substrate surface.
As a further improvement on the present invention, described step S02 is specially:
Growing graphene layer in diamond substrate.
As a further improvement on the present invention, described step S02 is specially:
Polishing is carried out in diamond substrate surface;
Growing graphene layer on diamond substrate surface after polishing.
As a further improvement on the present invention, after described step S2, also comprise:
The first nitride semiconductor layer is carried out to polishing.
As a further improvement on the present invention, described " polishing " comprise chemical polishing, mechanical polishing, chemico-mechanical polishing.
As a further improvement on the present invention, described diamond substrate is mono-crystalline structures or polycrystalline structure.
As a further improvement on the present invention, the preparation method of described diamond substrate is PVD or CVD.
As a further improvement on the present invention, described the first nitride semiconductor layer and/or the second nitride semiconductor layer are one or more the combination in GaN, AlGaN, AlN, InN, AlInGaN.
As a further improvement on the present invention, described the first nitride semiconductor layer and/or the second nitride semiconductor layer are doped layer or non-doped layer.
Correspondingly, a kind of nitride compound semiconductor device, described nitride compound semiconductor device adopts said method to prepare.
The present invention has the following advantages:
Need not introduce dielectric layer, therefore the thermal resistance of nitride-based semiconductor and diamond substrate interface is little, material perfect heat-dissipating;
Diamond substrate is carried out to planarizing process makes the nitride semiconductor layer evenness of subsequent growth high;
Adopt the features such as hydride vapour phase epitaxy method and the metallo-organic compound chemical vapour deposition technique growing nitride semiconductor layer that combines has fast growth, and growth quality is good.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, the accompanying drawing the following describes is only some embodiment that record in the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the process flow diagram of nitride compound semiconductor device on wafer bonding growing diamond substrate in prior art;
Wherein, 1 ' is substrate (preferably silicon), and 2 ' is nitride semiconductor layer, and 3 ' is sacrificing protection layer, and 4 ' is diamond substrate.
Fig. 2 is the preparation method's process flow diagram that the present invention is based on the nitride compound semiconductor device of diamond substrate.
Wherein, 1 is diamond substrate, and 2 is the first nitride semiconductor layer, and 3 is the second nitride semiconductor layer.
Embodiment
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, the conversion in structure, method or function that those of ordinary skill in the art makes according to these execution modes is all included in protection scope of the present invention.
The invention discloses a kind of preparation method of the nitride compound semiconductor device based on diamond substrate and preparation thereof and nitride compound semiconductor device, shown in ginseng Fig. 2, the method comprises:
S1, provide diamond substrate 1;
S2, in diamond substrate 1, adopt hydride vapour phase epitaxy method (HVPE, Hydride Vapor Phase Epitaxy) growth regulation mononitride semiconductor layer 2;
S3, on the first nitride semiconductor layer 2, adopt metallo-organic compound chemical vapour deposition technique (MOCVD, Metal-organic Chemical Vapor Deposition) growth regulation diammine semiconductor layer 3.
In an embodiment of the present invention, the first nitride semiconductor layer 2 and the second nitride semiconductor layer 3 are gallium nitride, and its structure can be wurtzite structure or zincblende lattce structure.The preparation method of this nitride compound semiconductor device is specially:
S1, selection diamond substrate material.This diamond substrate material can be that mono-crystalline structures can be also polycrystalline structure, can be natural can be also PVD (physical vapour deposition (PVD)) or CVD (chemical vapour deposition (CVD)) growth, there is the little rapid heat dissipation of thermal resistance.
S2, in diamond substrate, adopt HVPE growth regulation mononitride semiconductor layer.
In present embodiment, take gallium nitride as example, its growth course and feature are described.
HVPE is mainly that to adopt gallium, hydrogen chloride, ammonia be raw material, and gallium and hydrogen chloride react, and produce gallium chloride, and gallium chloride becomes gas after 200 ℃, on substrate surface, becomes gallium nitride with ammonia gas react.Because the method is very high in surperficial chemical saturation, thereby fast growth, than 50～100 times of the fast growths of MOCVD.HVPE method growing gallium nitride, can grow 200～300 microns for one hour, can at short notice this material be become to high-quality gallium nitride, fast nucleation.Therefore the method has that cost is low, the measured advantage of fast growth matter.
S3, on the first nitride semiconductor layer, adopt MOCVD growth regulation diammine semiconductor layer.
In present embodiment, take gallium nitride as example, its growth course and feature are described.
The method is all to pass into reative cell in the mode of gaseous state for each component and the dopant of growing gallium nitride material, therefore, can control by the flow of accurate control gaseous source and make-and-break time the component, doping content, thickness etc. of epitaxial loayer, can be for growth thin layer and Ultrathin Layer Materials.In reative cell, gas flow rate is very fast.Therefore, in the time need to changing the component of multi-element compounds and doping content, can change rapidly, reduce the possibility that memory effect occurs, this is conducive to obtain precipitous interface, is suitable for carrying out the growth of heterostructure and superlattice and quantum wells.The AlGaN/GaN heterojunction material performance that the method can obtain is good.Crystal growth is what to carry out in the mode of pyrolysis chemical reaction, is single warm area epitaxial growth, as long as control the uniformity of reaction source air-flow and Temperature Distribution well, just can guarantee the uniformity of epitaxial material.Therefore, be suitable for multi-disc and large stretch of epitaxial growth, be convenient to industrialized mass, and adopt MOCVD to be conducive to form the AlGaN/GaN heterojunction that material property is good.
Further, in the present invention, can also carry out planarizing process to diamond substrate, illustrate below in conjunction with embodiment.
In the second execution mode of the present invention, the preparation method of the nitride compound semiconductor device based on diamond substrate comprises the following steps:
S1, provide diamond substrate;
S02, polishing is carried out in diamond substrate surface;
On S2, diamond substrate surface after polishing, adopt HVPE growth regulation mononitride semiconductor layer;
S3, on the first nitride semiconductor layer, adopt MOCVD growth regulation diammine semiconductor layer.
In present embodiment, diamond substrate planarizing process is polishing diamond substrate surface.The optional chemical polishing of finishing method, mechanical polishing and chemico-mechanical polishing (CMP), preferably select CMP.It is fast that CMP has speed, and evenness is high, damages little advantage.After polishing, be conducive to reduce defect carrying out subsequent material growth, improve the quality of material, comprise uniformity and evenness etc.
In the 3rd execution mode of the present invention, the preparation method of the nitride compound semiconductor device based on diamond substrate comprises the following steps:
S1, provide diamond substrate;
S02, on diamond substrate surface growing graphene layer;
S2, on graphene layer, adopt HVPE growth regulation mononitride semiconductor layer;
S3, on the first nitride semiconductor layer, adopt MOCVD growth regulation diammine semiconductor layer.
Diamond substrate planarizing process is growing graphene layer on diamond substrate surface in the present embodiment, and all the other are all identical with the first execution mode, no longer further repeat at this.
Because the material of diamond and Graphene is carbon, and the surface smoothness of graphene layer is higher than diamond substrate, and the crystal structure of graphene layer is more conducive to growth nitride epitaxial layer compared with adamantine crystal structure, have that cost is low, the measured advantage of fast growth matter.
In the 4th execution mode of the present invention, the preparation method of the nitride compound semiconductor device based on diamond substrate comprises the following steps:
S1, provide diamond substrate;
S02, polishing is carried out in diamond substrate surface; Growing graphene layer on diamond substrate surface after polishing;
S2, on graphene layer, adopt HVPE growth regulation mononitride semiconductor layer;
S3, on the first nitride semiconductor layer, adopt MOCVD growth regulation diammine semiconductor layer.
Compared with the 3rd execution mode, present embodiment needed diamond substrate surface to carry out polishing before growing graphene layer, the optional chemical polishing of finishing method, mechanical polishing and chemico-mechanical polishing, on diamond substrate surface after polishing, be more conducive to growing graphene layer, further improved the speed of growth and quality.
Further, in the respective embodiments described above, grow after the first nitride semiconductor layer, can also carry out polishing to the first nitride semiconductor layer, similarly, the optional chemical polishing of finishing method, mechanical polishing and chemico-mechanical polishing.The first nitride semiconductor layer after polishing can improve the speed of growth and the quality of the second nitride semiconductor layer thereon.
It should be noted that in the present invention that the first nitride semiconductor layer and/or the second nitride semiconductor layer are not limited only to gallium nitride, also can be with being other nitride semi-conductor materials, as AlGaN, InN, AlN, AlInN, AlInGaN, can be a kind of can be also the combination of multiple material.The material of the first nitride semiconductor layer and the second nitride semiconductor layer can be the same or different.Further, the first nitride semiconductor layer and/or the second nitride semiconductor layer are doped layer or non-doped layer.This material can be for the preparation of photoelectric device as LED through subsequent technique, AlGaN/GaN HEMT device or the integrated circuit that comprises this structure etc.
As can be seen from the above technical solutions, nitride compound semiconductor device that the present invention is based on diamond substrate and preparation method thereof has the following advantages:
Need not introduce dielectric layer, therefore the thermal resistance of nitride-based semiconductor and diamond substrate interface is little, material perfect heat-dissipating;
Diamond substrate is carried out to planarizing process makes the nitride semiconductor layer evenness of subsequent growth high;
The features such as the method growing nitride semiconductor layer that adopts HVPE and MOCVD to combine has fast growth, and growth quality is good.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and in the situation that not deviating from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, is therefore intended to all changes that drop in the implication and the scope that are equal to important document of claim to include in the present invention.Any Reference numeral in claim should be considered as limiting related claim.
In addition, be to be understood that, although this specification is described according to execution mode, but be not that each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should make specification as a whole, and the technical scheme in each embodiment also can, through appropriately combined, form other execution modes that it will be appreciated by those skilled in the art that.
Claims (12)
1. a preparation method for the nitride compound semiconductor device based on diamond substrate, is characterized in that, said method comprising the steps of:
S1, provide diamond substrate;
S2, in diamond substrate, adopt HVPE growth regulation mononitride semiconductor layer;
S3, on the first nitride semiconductor layer, adopt MOCVD growth regulation diammine semiconductor layer.
2. method according to claim 1, is characterized in that, after described step S1, also comprises:
S02, diamond substrate is carried out to planarizing process.
3. method according to claim 2, is characterized in that, described step S02 is specially:
Polishing is carried out in diamond substrate surface.
4. method according to claim 2, is characterized in that, described step S02 is specially:
Growing graphene layer in diamond substrate.
5. method according to claim 2, is characterized in that, described step S02 is specially:
Polishing is carried out in diamond substrate surface;
Growing graphene layer on diamond substrate surface after polishing.
6. method according to claim 1, is characterized in that, after described step S2, also comprises:
The first nitride semiconductor layer is carried out to polishing.
7. according to the method described in any one in claim 3 or 5, it is characterized in that, described " polishing " comprises chemical polishing, mechanical polishing, chemico-mechanical polishing.
8. method according to claim 1, is characterized in that, described diamond substrate is mono-crystalline structures or polycrystalline structure.
9. method according to claim 1, is characterized in that, the preparation method of described diamond substrate is PVD or CVD.
10. method according to claim 1, is characterized in that, described the first nitride semiconductor layer and/or the second nitride semiconductor layer are one or more the combination in GaN, AlGaN, AlN, InN, AlInGaN.
11. methods according to claim 1, is characterized in that, described the first nitride semiconductor layer and/or the second nitride semiconductor layer are doped layer or non-doped layer.
12. 1 kinds of nitride compound semiconductor devices based on diamond substrate, is characterized in that, described nitride compound semiconductor device adopts method in claim 1 to prepare.
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| CN108807153A (en) * | 2018-04-08 | 2018-11-13 | 中国电子科技集团公司第五十五研究所 | Buddha's warrior attendant ground mass gallium nitride transistor and the preparation method based on surface-activated bond technique |
| CN109273526A (en) * | 2018-10-24 | 2019-01-25 | 深圳市华讯方舟微电子科技有限公司 | A kind of high-performance transistor and its manufacturing method |
| CN110223918A (en) * | 2019-04-23 | 2019-09-10 | 西安电子科技大学 | A kind of aperture formula compound substrate gallium nitride device and preparation method thereof |
| WO2019178916A1 (en) * | 2018-03-21 | 2019-09-26 | 华南理工大学 | Two-dimensional ain material, fabrication method therefor and application thereof |
| CN113056659A (en) * | 2018-09-19 | 2021-06-29 | 阿卡什系统公司 | System and method for satellite communication |
| EP4131346A4 (en) * | 2020-03-23 | 2023-04-19 | Mitsubishi Electric Corporation | Nitride semiconductor device, and method for manufacturing same |
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