CN103777266A - Reflection phase delay mirror and manufacturing method thereof - Google Patents
Reflection phase delay mirror and manufacturing method thereof Download PDFInfo
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- CN103777266A CN103777266A CN201410036039.9A CN201410036039A CN103777266A CN 103777266 A CN103777266 A CN 103777266A CN 201410036039 A CN201410036039 A CN 201410036039A CN 103777266 A CN103777266 A CN 103777266A
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Abstract
The invention discloses a reflection phase delay mirror and a manufacturing method thereof. The reflection phase delay mirror comprises a plane substrate sheet, a high reflectance film is plated on one face of the plane substrate sheet, the high reflectance film is formed by Au(LH)m, the Au is Au plating layers, the L is low refractive index layers, the H is a high refractive index layer, and the m is the alternate repeating number of the low refractive index layers and the high refractive index layers. According to the manufacturing method of the reflection phase delay mirror, a gold layer is plated on one face of the plane substrate sheet first, the low refractive index layers and the high refractive index layers are plated alternatively, when linearly polarized light irradiates the surface of the reflection phase delay mirror with a 45-degree angle, the linearly polarized light is broken up into S polarized light vectors and P polarized light vectors, the S polarized light vectors and the P polarized light vectors are mutually perpendicular and basically equal in amplitude, high reflectance and phase delay of the S polarized light vectors and the P polarized light vectors are achieved, the linearly polarized light output by a laser light source can also be converted into circularly polarized light, the circularly polarized light is excellent light beams for cutting and welding, cuts or welding seams can be identical, and the surfaces of the cuts are smooth and perpendicular to machining surfaces.
Description
Technical field
The present invention relates to optical field, refer to that especially a kind of reflected phase will for laser high-precision cutting and welding postpones mirror and preparation method thereof.
Background technology
In optical system, use a large amount of optical elements, realize the functions such as the turning back of generation, amplification and light beam, polarization of light wave.Wherein phase delay chip is a kind of optical elements of a large amount of uses in optical system, is a kind of important polarized light modulation device, to realize the adjusting of two kinds of polarized light phase differential of incident beam.As the composite phase retardation plate (CN102798921A) in organic light emitting display, have good visual characteristic and be applicable to the composite phase retardation plate (CN1932560A) in mobile device liquid crystal display, compensation silicon-based liquid crystal display screen produces the trim retarder (CN1661420A) of residual birefringence.In order to realize phase delay, must use to have and regulate the anisotropic material of two kinds of polarized light phase differential abilities of incident or utilizing saturating reflected phase will delay variance in oblique incidence situation, as liquid crystal (CN1078049A, CN102707362A), birefringece crystal material (CN102383808A, CN102508328A), lead lanthanum zirconate titanate (PLZT) electrooptical ceramics material (CN102722041A) and phase delay optical fiber (CN2791666Y) etc.Under normal circumstances, phase delay device transmission is used, and according to this device, the adjusting of two kinds of polarized light phase differential of incident beam is realized to certain phase-delay quantity.Patent CN201166717Y, by with two oblique incidences under the film-type phase retardation film that uses, two optical adjusting frames and an accurate platform of adjusting can be realized regulating reflection phase delay function, although this type of design is based on reflection-type phase delay device, but need multiple component combinations could realize corresponding phase delay function, system is comparatively complicated together.
Optical resonator (optical resonant cavity) thus be light wave therein back reflective the cavity of luminous energy feedback is provided, be the necessary component of laser instrument, conventionally formed by two planes vertical with actuating medium axis or catoptron.Laserresonator completely reflecting mirror, is coated with difficulty very large.But it does not relate to polarisation of light and phase delay, therefore can not be applied to hi-precision cutting and the welding of laser.
Summary of the invention
The present invention proposes a kind of reflected phase will and postpones mirror and preparation method thereof, is mainly used in laser instrument, can realize cutting and the welding of laser high-precision.
Technical scheme of the present invention is achieved in that a kind of reflected phase will postpones mirror, comprises plane-based egative film, is coated with highly reflecting films in the one side of described plane-based egative film, and the formation of described highly reflecting films is Au(LH)
m, wherein, Au is plating Au layer, and L is low-index layer, and H is high refractive index layer, and m is low-index layer and the alternately repeated number of times of high refractive index layer.
Wherein, preferably, described low-index layer is YF
3layer, described high refractive index layer is ZnSe layer.
Wherein, preferably, the value of described m is 1,2,3,4,5,6 or 7.
Wherein, preferably, described plane-based egative film is silica-based egative film or copper substrate sheet.
Reflected phase will postpones a preparation method for mirror, comprises the following steps:
1) will after the cleaning of plane-based egative film, pack coating machine into;
2) adopt electron gun evaporation source, be first coated with Au layer in the one side of plane-based egative film, then alternately repeat to be coated with low-index layer and high refractive index layer;
3) after rete has been coated with, naturally cool to room temperature, to obtain final product.
Beneficial effect of the present invention is:
1. the present invention is in first Gold plated Layer of plane-based egative film, then alternately plate low-refraction YF3 layer and high index of refraction ZnSe layer, when linearly polarized light incides on reflected phase will delay mirror surface with 45° angle, make linearly polarized light be decomposed into S polarized light orthogonal and that amplitude equates substantially, P Polarization Vector, realize high reflectance and the phase delay of S polarized light, P polarized light.
2. low-refraction YF in the present invention
3the number of times that layer and high index of refraction ZnSe layer alternately repeat to be coated with is 7 o'clock, when linearly polarized light incides on reflected phase will delay mirror surface with 45° angle, can realize 90 ° of the high reflectance of S polarized light, P polarized light and phase delays, thereby reach the object that realizes circularly polarized light.
3. reflected phase will delay mirror of the present invention can make the linearly polarized light of LASER Light Source output be converted to circularly polarized light, and circularly polarized light is cutting and the fine light beam welding, and makes otch or weld seam consistent, cut sides is smooth and perpendicular to finished surface, increase substantially process velocity, efficiency is high, and crudy is good.
4. principle and manufacture method, the using method of reflected phase will delay mirror of the present invention are not only applicable to high power CO2 laser light source, are equally applicable to other LASER Light Source.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation that the embodiment of the present invention 1 reflected phase will postpones mirror;
Fig. 2 is the local enlarged diagram of highly reflecting films in Fig. 1.
In figure:
1. substrate sheet, 2. plating Au layer, 3.YF
3layer, 4.ZnSe layer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
As depicted in figs. 1 and 2, the present embodiment discloses a kind of reflected phase will and postpones mirror, comprises plane-based egative film 1, is coated with highly reflecting films in the one side of described plane-based egative film 1, and the formation of described highly reflecting films is Au(LH)
7, wherein, Au is plating Au layer 2, and L is low-index layer, and H is high refractive index layer, and 7 represent low-index layer and the alternately repeated number of times of high refractive index layer.
Wherein, low-index layer is YF
3layer 3, high refractive index layer is ZnSe layer 4.
Wherein, the thickness of plating Au layer 2 is 200nm, YF
3the thickness of layer 3 and ZnSe layer 4 is as follows successively:
| YF 3Layer | 1565.99nm |
| ZnSe layer | 1545.75nm |
| YF 3Layer | 1150.71nm |
| ZnSe layer | 1604.76nm |
| YF 3Layer | 898.86nm |
| ZnSe layer | 1639.04nm |
| YF 3Layer | 722.01nm |
| ZnSe layer | 1639.64nm |
| YF 3Layer | 599.02nm |
| ZnSe layer | 1567.89nm |
| YF 3Layer | 564.82nm |
| ZnSe layer | 1514.55nm |
| YF 3Layer | 584.33nm |
| ZnSe layer | 978.79nm |
Above-mentioned reflected phase will postpones the preparation method of mirror, comprises the following steps:
1) after being cleaned, plane-based egative film 1 packs coating machine into;
2) adopt electron gun evaporation source, be first coated with Au layer in the one side of plane-based egative film 1, then low-refraction YF
3layer and high index of refraction ZnSe layer 4 are alternately coated with;
3) after rete has been coated with, naturally cool to room temperature, to obtain final product.
In the present embodiment, the model of coating machine used is ZZS660 type, and electron gun evaporation source adopts E type electron gun evaporation source.
In the present embodiment, it is that diameter is the circular flat mirror that 50.8mm, thickness are 10mm that the reflected phase will making postpones mirror.When the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, the result of reflection of light rate and phase delay is as shown in table 1 below:
Table 1: embodiment 1 reflection of light rate and phase delay result
| Film system | Reflectivity | Phase place | Phase differential |
| Au(LH) 7 | Rs=98.12% | Ps=143.97° | Dif=88.96° |
| ? | Rp=98.12% | Pp=232.94° | ? |
Illustrate: Rs is S component reflectivity, Rp is P component reflectivity, and Ps is S component phase, and Pp is P component phase, and Dif is the phase differential of S component and P component, and L is low-refraction YF
3layer, H is high index of refraction ZnSe layer 4.
As can be seen from the above table, when the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, can realize 90 ° of the high reflectance of S polarized light, P polarized light and phase delays, thereby reach the object that realizes circularly polarized light.Circularly polarized light is cutting and the fine light beam of welding, makes otch or weld seam consistent, and cut sides is smooth and perpendicular to finished surface, increases substantially process velocity, and efficiency is high, and crudy is good.
In the present embodiment, plane-based egative film 1 removes as silica-based egative film, in the present invention, and also available copper substrate sheet.
Embodiment 2
The present embodiment discloses a kind of reflected phase will and postpones mirror, and the difference of the present embodiment and embodiment 1 is: YF
3layer 3 and the alternately repeated number of times of ZnSe layer 4 are 6, and other technical characterictic and preparation method are all identical with embodiment 1.
Wherein, the thickness of plating Au layer 2 is 200nm, YF
3the thickness of layer 3 and ZnSe layer 4 is as follows successively:
When the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, the result of reflection of light rate and phase delay is as shown in table 2 below.
The present embodiment discloses a kind of reflected phase will and postpones mirror, and the difference of the present embodiment and embodiment 1 is: YF
3layer 3 and the alternately repeated number of times of ZnSe layer 4 are 5, and other technical characterictic and preparation method are all identical with embodiment 1.
Wherein, the thickness of plating Au layer 2 is 200nm, YF
3the thickness of layer 3 and ZnSe layer 4 is as follows successively:
| YF 3Layer | 1573nm |
| ZnSe layer | 1553nm |
| YF 3Layer | 1161nm |
| ZnSe layer | 1606nm |
| YF 3Layer | 911nm |
| ZnSe layer | 1596nm |
| YF 3Layer | 671nm |
| ZnSe layer | 1438nm |
| YF 3Layer | 356nm |
| ZnSe layer | 1128nm |
When the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, the result of reflection of light rate and phase delay is as shown in table 2 below.
Embodiment 4
The present embodiment discloses a kind of reflected phase will and postpones mirror, and the difference of the present embodiment and embodiment 1 is: YF
3layer 3 and the alternately repeated number of times of ZnSe layer 4 are 4, and other technical characterictic and preparation method are all identical with embodiment 1.
Wherein, the thickness of plating Au layer 2 is 200nm, YF
3the thickness of layer 3 and ZnSe layer 4 is as follows successively:
| YF 3Layer | 1543nm |
| ZnSe layer | 1528nm |
| YF 3Layer | 1140nm |
| ZnSe layer | 1534nm |
| YF 3Layer | 862nm |
| ZnSe layer | 1380nm |
| YF 3Layer | 507nm |
| ZnSe layer | 951nm |
When the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, the result of reflection of light rate and phase delay is as shown in table 2 below.
Embodiment 5
The present embodiment discloses a kind of reflected phase will and postpones mirror, and the difference of the present embodiment and embodiment 1 is: YF
3layer 3 and the alternately repeated number of times of ZnSe layer 4 are 3, and other technical characterictic and preparation method are all identical with embodiment 1.
Wherein, the thickness of plating Au layer 2 is 200nm, YF
3the thickness of layer 3 and ZnSe layer 4 is as follows successively:
| YF 3Layer | 1418nm |
| ZnSe layer | 1471nm |
| YF 3Layer | 1118nm |
| ZnSe layer | 1302nm |
| YF 3Layer | 707nm |
| ZnSe layer | 800nm |
When the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, the result of reflection of light rate and phase delay is as shown in table 2 below.
Embodiment 6
The present embodiment discloses a kind of reflected phase will and postpones mirror, and the difference of the present embodiment and embodiment 1 is: YF
3layer 3 and the alternately repeated number of times of ZnSe layer 4 are 2, and other technical characterictic and preparation method are all identical with embodiment 1.
Wherein, the thickness of plating Au layer 2 is 200nm, YF
3the thickness of layer 3 and ZnSe layer 4 is as follows successively:
| YF 3Layer | 1226nm |
| ZnSe layer | 1235nm |
| YF 3Layer | 935nm |
| ZnSe layer | 747nm |
When the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, the result of reflection of light rate and phase delay is as shown in table 2 below.
Embodiment 7
The present embodiment discloses a kind of reflected phase will and postpones mirror, and the difference of the present embodiment and embodiment 1 is: YF
3layer 3 and the alternately repeated number of times of ZnSe layer 4 are 1, and other technical characterictic and preparation method are all identical with embodiment 1.
Wherein, the thickness of plating Au layer 2 is 200nm, YF
3the thickness of layer 3 and ZnSe layer 4 is as follows successively:
| YF 3Layer | 766nm |
| ZnSe layer | 757nm |
When the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, the result of reflection of light rate and phase delay is as shown in table 2 below.
Table 2: embodiment 2～6 reflection of light rates and phase delay result
| Film system | Reflectivity | Phase place | Phase differential |
| Au(LH) | Rs=98.44% | Ps=264.76° | Dif=56.24° |
| ? | Rp=97.44% | Pp=321.01° | ? |
| Au(LH) 2 | Rs=99.13% | Ps=264.35° | Dif=86.56° |
| ? | Rp=97.06% | Pp=350.91° | ? |
| Au(LH) 3 | Rs=98.55% | Ps=329.10° | Dif=87.04° |
| ? | Rp=97.28% | Pp=56.14° | ? |
| Au(LH) 4 | Rs=97.58% | Ps=64.14° | Dif=87.79° |
| ? | Rp=97.54% | Pp=151.93° | ? |
| Au(LH) 5 | Rs=97.77% | Ps=106.92° | Dif=88.22° |
| ? | Rp=97.77% | Pp=195.14° | ? |
| Au(LH) 6 | Rs=97.90% | Ps=142.08° | Dif=88.45° |
| ? | Rp=97.90% | Pp=230.53° | ? |
Illustrate: Rs is S component reflectivity, Rp is P component reflectivity, and Ps is S component phase, and Pp is P component phase, and Dif is the phase differential of S component and P component, and L is low-refraction YF
3layer, H is high index of refraction ZnSe layer.
As can be seen from the above table, when the reflected phase will that polarized light incides the present embodiment with 45° angle postpones on mirror surface, can realize high reflectance and the phase delay of S polarized light, P polarized light.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. reflected phase will postpones a mirror, comprises plane-based egative film, it is characterized in that, be coated with highly reflecting films in the one side of described plane-based egative film, the formation of described highly reflecting films is Au(LH)
m, wherein, Au is plating Au layer, and L is low-index layer, and H is high refractive index layer, and m is low-index layer and the alternately repeated number of times of high refractive index layer.
2. a kind of reflected phase will according to claim 1 postpones mirror, it is characterized in that, described low-index layer is YF
3layer, described high refractive index layer is ZnSe layer.
3. a kind of reflected phase will according to claim 1 postpones mirror, it is characterized in that, the value of described m is 1,2,3,4,5,6 or 7.
4. a kind of reflected phase will according to claim 2 postpones mirror, it is characterized in that, described plane-based egative film is silica-based egative film or copper substrate sheet.
5. the reflected phase will described in claim 1～4 any one postpones a preparation method for mirror, it is characterized in that, comprises the following steps:
1) will after the cleaning of plane-based egative film, pack coating machine into;
2) adopt electron gun evaporation source, be first coated with Au layer in the one side of plane-based egative film, then alternately repeat to be coated with low-index layer and high refractive index layer;
3) after rete has been coated with, naturally cool to room temperature, to obtain final product.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110274326A (en) * | 2018-03-16 | 2019-09-24 | 浙江大学 | A kind of radiation refrigerator and preparation method thereof in the daytime |
| US10761256B2 (en) | 2018-04-16 | 2020-09-01 | Samsung Electronics Co., Ltd. | Backlight unit providing uniform light and display apparatus including the same |
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| US10761256B2 (en) | 2018-04-16 | 2020-09-01 | Samsung Electronics Co., Ltd. | Backlight unit providing uniform light and display apparatus including the same |
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Application publication date: 20140507 |