CN103765179A - Capacitance type pressure sensor, method for manufacturing same, and input device - Google Patents
Capacitance type pressure sensor, method for manufacturing same, and input device Download PDFInfo
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- CN103765179A CN103765179A CN201280041882.5A CN201280041882A CN103765179A CN 103765179 A CN103765179 A CN 103765179A CN 201280041882 A CN201280041882 A CN 201280041882A CN 103765179 A CN103765179 A CN 103765179A
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- diaphragm
- pressure transducer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Abstract
A dielectric layer (33) is formed on the upper surface of a fixed electrode (32), and a recess (34) is provided in the surface of the dielectric layer (33). An upper substrate (37) is layered on the surface of the dielectric layer (33) so as to cover the recess (34), and a conductive diaphragm (38) (part of the upper substrate (37)) having a thin film form is disposed over the recess (34). A first contact surface (35) and a second contact surface (36) for making contact with the diaphragm (38) are formed on the surface of the dielectric layer (33) within the recess (34). The first contact surface (35) and the second contact surface (36) are, for example, horizontal surfaces, and the first contact surface (35) and the second contact surface (36) are separated by a step, which is a vertical surface. The second contact surface (36) is in a position higher than the first contact surface (35).
Description
Technical field
The present invention relates to capacitance pressure transducer, and its manufacture method and input media, in particular to the diaphragm by because of pressure deflection and dielectric layer, contact capacitance pressure transducer, and its manufacture method of the touch mode of detection pressure.In addition, relate to the input media of having applied this capacitance pressure transducer.
Background technology
In common capacitance pressure transducer,, the diaphragm of electric conductivity (movable electrode) separates gap with fixed electorde and is relative, according to the capacitance variations between diaphragm and fixed electorde because of pressure deflection, carrys out detected pressures.But, in the case of this pressure transducer be utilize silicon substrate etc. and the microdevice manufactured by MEMS technology, when diaphragm being applied compared with large pressure, during diaphragm deflection significantly, diaphragm is likely damaged.
Therefore, motion has following pressure transducer,, on the surface of fixed electorde, is provided with dielectric layer that is, and because the diaphragm of pressure deflection contacts with dielectric layer, by the variation of its contact area, the electric capacity between diaphragm and fixed electorde changes.This pressure transducer is often called as touch mode (static) capacitance pressure transducer.
As the capacitance pressure transducer, of touch mode, for example, the capacitance pressure transducer, that has non-patent literature 1 to record.Fig. 1 (A) is the sectional view of the pressure transducer 11 that represents that non-patent literature 1 records.In this pressure transducer 11, on glass substrate 12, be formed with the fixed electorde 13 being formed by metallic film, from fixed electorde 13, on glass substrate 12, be formed with dielectric film 14.On dielectric film 14, offer through hole 15, the electrode pad above 16 that is arranged at dielectric film 14 is connected with fixed electorde 13 through through hole 15.On dielectric film 14, be laminated with silicon substrate 17, on silicon substrate 17, be provided with recess 18, and be provided with below recess 19, between recess 18 and recess 19, be formed with the diaphragm 20 of film-form.Diaphragm 20 is arranged on the position overlapping with fixed electorde 13.In addition, become high concentration doped with B(boron below silicon substrate 17) P+ layer 21, thus, diaphragm 20 is endowed electric conductivity and has the function of movable electrode.Below diaphragm 20 and between dielectric film 14, the gap 22 that has produced several μ m because of recess 19.
Fig. 1 (B) is the figure that represents the relation (pressure-capacitance characteristic) between pressure and the electric capacity of pressure transducer 11, is the figure that non-patent literature 1 is recorded.When the diaphragm 20 to pressure transducer 11 is exerted pressure, diaphragm 20 is exerted pressure and is produced deflection according to this, and contacts with dielectric film 14 with certain pressure.The pressure of Fig. 1 (B) is the state that diaphragm 20 does not contact with dielectric film 14 from 0 to Pa interval (not contact area).What the interval (beginning contact area) of pressure from Pa to Pb represented is the state contacting with dielectric film 14 from diaphragm 20 to contacting reliably with area to a certain degree.The interval (operating space) of pressure from Pb to Pc is the region that the area of the part that diaphragm 20 contacts with dielectric film 14 along with the increase of pressure increases gradually.The interval (zone of saturation) of pressure from Pc to Pd is even if be that the roughly whole face of diaphragm 20 all contacts with dielectric film 14 and pressure increases and region that contact area also increases hardly.
According to pressure-capacitance characteristic of Fig. 1 (B), in the not contact area not contacting at diaphragm 20, the variation of electric capacity is less, but when reaching beginning contact area, the rate of change (gathering way) of electric capacity just increases gradually.And then in operating space, although linear good, the rate of change of electric capacity reduces gradually, when reaching capacity region, electric capacity increases hardly.
In the pressure transducer 11 of this touch mode, if establishing the contact area of diaphragm 20 and dielectric film 14 is S, if the thickness of dielectric film 14 is d, the specific inductive capacity of establishing dielectric film 14 is ε, and the electric capacity between diaphragm 20 and dielectric film 14 represents by formula 1 below.
C=Co+ ε (S/d) (formula 1)
At this, Co is the electric capacity of contact area not.
Because thickness d and the DIELECTRIC CONSTANT ε of dielectric film 14 do not change, therefore known according to formula 1, when pressure P increases, the contact area S of diaphragm 20 just increases, and consequently, the capacitor C of pressure transducer 11 increases.But according to Fig. 1 (B), pressure-capacitance characteristic from starting to touch, describe is all parabolic curve by zone of saturation.Therefore, contact area S(or, capacitance difference C-Co) be considered to, with regard to qualitative, roughly with P
n(wherein, 0 < n < 1) is directly proportional.
, in pressure transducer, in most cases, in lower pressure region, require high sensitivity, but can in high pressure region, be also muting sensitivity, sometimes in the internal control of high pressure region, be made as muting sensitivity, for example, instead, wish range extension.
But, when adopt be the structure of the pressure transducer recorded as non-patent literature 1 time, when carrying out high-sensitivity in lower pressure region, even in high pressure region, measure sensitivity and also raise, being difficult to be manufactured in lower pressure region is the pressure transducer of muting sensitivity for high sensitivity and in high pressure region.In addition, even by the specific inductive capacity of the diameter of diaphragm and thickness, dielectric layer and thickness is equivalent optimizes and can obtain best measurement sensitivity in lower pressure region and in high pressure region, but be also difficult to design.
And in the pressure transducer of recording at non-patent literature 1, whether the pressure that is difficult to detection measurement has reached the maximal value (maximum pressure) of range, in the time will surveying this value, just needs subsequent conditioning circuit.
In addition, patent documentation 1 is disclosed is the semiconductor pressure sensor that is provided with stepped backup portion on the silicon substrate relative with diaphragm.But the disclosed pressure transducer of patent documentation 1 is the pressure transducer that the deflection by utilizing deformation detection element (piezoresistance) to survey diaphragm carrys out detected pressures, different from capacitive pressure transducer.And this pressure transducer is only diaphragm along the bight (upper end of step wall) of backup portion and the pressure transducer of distortion, be not the height of sensitivity in lower pressure region and high pressure region different pressure transducers all.
Patent documentation 1: No. 3144314 communique of patent
Non-patent literature 1: quick, outer 4 of Yamamoto, " touch mode capacitance pressure transducer, ", rattan storehouse technical report, K.K. Tokura, October calendar year 2001, No. 101, p.71-74
Summary of the invention
The present invention completes in view of technical task as above, its object is, providing a kind of can easily change measurement sensitivity according to the measurement range of pressure, and easily whether detection pressure has reached capacitance pressure transducer, and its manufacture method of the peaked touch mode of range.And then, relate to the input media of applying this sensor.
The first capacitance pressure transducer, of the present invention possesses: fixed electorde; Be formed at the dielectric layer of the top of described fixed electorde; The diaphragm of the electric conductivity forming across gap above described dielectric layer, it is characterized in that, the part relative with described diaphragm in described dielectric layer has the multiple contact areas for contacting with described diaphragm, when the thickness of described dielectric layer is made as to d, when the specific inductive capacity of described dielectric layer is made as to ε, on the mutual border of described each contact area, its value than ε/d changes discontinuously.In addition, on the mutual border of each contact area, value than ε/d changes and refers to discontinuously, and on contact area border each other, the value of the ε/d of the value of ε/d of the position that approaches this border most of a side contact area and the position that approaches this border most of the opposing party's contact area is different.
In the first capacitance pressure transducer, of the present invention, while contacting with dielectric layer owing to exceeding the border of contact area when the surface of contact of diaphragm, the relation (capacitance characteristic) of contact area and electric capacity just changes, therefore, according to the scope of gaging pressure, can make pressure-capacitance characteristic change.For example, can either in lower pressure region, put forward high measurement sensitivity, can in high pressure region, reduce again and measure sensitivity.And then, also easily carry out the detection of the top pressure of range.
As certain embodiment of the first capacitance pressure transducer, of the present invention, as long as the thickness of described dielectric layer is changed discontinuously on the mutual border of described each contact area.As which, both can change thickness in the face side of dielectric layer, also side changes thickness overleaf.
The thickness that changes dielectric layer in face side, as long as stepped step is set on the mutual border of described each contact area and the surface at described dielectric layer.Particularly, as long as make the distance of the described diaphragm under state that the surface lies of described each contact area do not exert pressure mutually identical.In this case, when diaphragm exceedes the border of each contact area, the elasticity of diaphragm will change discontinuously, therefore, according to the scope of gaging pressure, can make pressure-capacitance characteristic occur to change more significantly.
Being characterized as of the different embodiment of the first capacitance pressure transducer, of the present invention, when putting on the pressure increase of described diaphragm, described diaphragm contacts with the described contact area less than the value of ε/d successively.According to this embodiment, in lower pressure region, can put forward high measurement sensitivity, in high pressure region, can reduce measurement sensitivity.
Particularly, if the surface of described each contact area is with in the case of the pressure that described diaphragm is applied with to increase gradually, the mode that the height recording from the bottom surface of described dielectric layer raises successively according to the order of described diaphragm contact forms, in lower pressure region, high measurement sensitivity can be put forward, in high pressure region, measurement sensitivity can be reduced.
In addition, side changes in the situation of thickness of dielectric layer overleaf, as long as form stepped step in the region relative with described diaphragm and on described fixed electorde.In this case, the surface of described each contact area also can be formed as smooth as a whole, and diaphragm can be out of shape reposefully.
Particularly, if the thickness of the dielectric layer under described surface of contact is with in the case of the pressure that described diaphragm is applied with to increase gradually, according to the order of the described diaphragm contact successively mode of thickening, form, in lower pressure region, high measurement sensitivity can be put forward, in high pressure region, measurement sensitivity can be reduced.
If the surface of described contact area is all the plane parallel with the described diaphragm of the state of not exerting pressure, the surperficial processing of dielectric layer will become easy.
As the further different embodiment of the first capacitance pressure transducer, of the present invention, on the mutual border of described each contact area, the specific inductive capacity of described dielectric layer also can change discontinuously.Also like this in this case, when the surface of contact of diaphragm exceedes the border of contact area and contacts with dielectric layer, the relation (capacitance characteristic) between contact area and electric capacity just changes, therefore, according to the scope of gaging pressure, can make pressure-capacitance characteristic change.For example, can either in lower pressure region, put forward high measurement sensitivity, can in high pressure region, reduce again and measure sensitivity.
The second capacitance pressure transducer, of the present invention possesses: fixed electorde; Be formed at the dielectric layer of the top of described fixed electorde; The diaphragm of the electric conductivity forming across gap above described dielectric layer, it is characterized in that, the part relative with described diaphragm in described dielectric layer has the multiple contact areas for contacting with described diaphragm, on the mutual border of described each contact area, the surface of described dielectric layer has stair-stepping step.
In the second capacitance pressure transducer, of the present invention, when diaphragm exceedes the border of each contact area, the elasticity of diaphragm just changes discontinuously, therefore, according to the scope of gaging pressure, can make pressure-capacitance characteristic change more significantly.For example, can either in lower pressure region, put forward high measurement sensitivity, can in high pressure region, reduce again and measure sensitivity.
The manufacture method of capacitance pressure transducer, of the present invention makes the different capacitance pressure transducer, of thickness of contact area for the manufacture of giving step to the face side of dielectric layer, this manufacture method possesses following operation: above described fixed electorde, form the first dielectric film; By etching, partly remove described the first dielectric film and form first opening with stepped edges; From described the first dielectric film, above described fixed electorde, form the second dielectric film; By etching, partly remove described the second dielectric film and form second opening with stepped edges; From described the first dielectric film and described the second dielectric film, above described fixed electorde, form the 3rd dielectric film.In addition, the first opening does not need to connect the first dielectric film.The second opening does not need to connect the second dielectric film yet.In addition, the area of described the second opening both can be less than described the first opening, also can be larger than described the first opening.
According to this manufacture method, can manufacture by simple MEMS operation and give to the face side of dielectric layer the different capacitance pressure transducer, of thickness that step makes contact area.
Accompanying drawing explanation
Fig. 1 (A) is the summary sectional view that represents the pressure transducer of conventional example; Fig. 1 (B) is presentation graphs 1(A) shown in pressure and the electric capacity of pressure transducer of conventional example between the figure of relation;
Fig. 2 (A) is the summary planimetric map of the pressure transducer of embodiment of the present invention 1; Fig. 2 (B) is the summary sectional view along the X-X line of Fig. 2 (A);
Fig. 3 (A) and Fig. 3 (B) are summary planimetric map and the summary sectional views of the state except diaphragm of the pressure transducer of embodiment of the present invention 1;
Fig. 4 (A)-Fig. 4 (D) is the key diagram of the degree of deformation of the diaphragm while representing diaphragm to be applied with gradually the pressure increasing;
Fig. 5 is the figure that represents the relation between the pressure transducer of the embodiment of the present invention and the pressure of the pressure transducer of conventional example and the rate of change of electric capacity;
Fig. 6 (A)-Fig. 6 (E) is the sectional view that the manufacturing process of the pressure transducer to embodiment of the present invention 1 describes;
Fig. 7 (A)-Fig. 7 (D) is the sectional view that the manufacturing process of the same pressure transducer is described, expression be the then operation of Fig. 6 (E);
Fig. 8 (A)-Fig. 8 (C) is the sectional view that the manufacturing process of the same pressure transducer is described, expression be the then operation of Fig. 7 (D);
Fig. 9 (A) and Fig. 9 (B) are the sectional views that the manufacturing process of the same pressure transducer is described, expression be the then operation of Fig. 8 (C);
Figure 10 (A) is the summary planimetric map of the pressure transducer of embodiment of the present invention 2; Figure 10 (B) is the summary planimetric map of the dielectric layer that uses of this pressure transducer;
Figure 11 is the summary sectional view of the pressure transducer of embodiment of the present invention 3;
Figure 12 is the summary sectional view of the pressure transducer of embodiment of the present invention 4;
Figure 13 is the summary sectional view of the pressure transducer of embodiment of the present invention 5;
Figure 14 is the summary sectional view of the pressure transducer of embodiment of the present invention 6;
Figure 15 is the summary sectional view of the input media of embodiment of the present invention 7.
Symbol description
31,61-65 pressure transducer
32 fixed electordes
33 dielectric layers
34 recesses
35 first surface of contact (surface of contact)
36 second surface of contact (surface of contact)
37 upper substrates
38 diaphragms
40 top electrode pads
42 bottom electrode pads
Embodiment
Below, with reference to accompanying drawing, preferred forms of the present invention is described.But the present invention is not limited to embodiment below, not departing from the scope of purport of the present invention, can carry out various design alterations.
(embodiment 1)
Below, with reference to Fig. 2 and Fig. 3, the structure of the pressure transducer 11 to embodiments of the present invention describes.Fig. 2 (A) is the summary planimetric map of pressure transducer 11, and Fig. 2 (B) is the X-X line sectional view of Fig. 2 (A).In addition, Fig. 3 (A) is the summary planimetric map of the dielectric layer 33 that represents that pressure transducer 11 uses, and Fig. 3 (B) is the fixed electorde 32 that uses of pressure transducer 11 and the summary sectional view of dielectric layer 33.
In this pressure transducer 11, on the fixed electorde 32 being formed by conductive materials such as low-resistance silicon substrate and metal films, be formed with dielectric layer 33.Dielectric layer 33 is by SiO
2, the dielectric substance such as SiN, TEOS forms.Dielectric layer 33 is concaved with recess 34(recess in the above).In recess 34, be formed with the different multiple surface of contact (surface of contact area) of height that record below dielectric layer 33.In illustrative example, be provided with the first surface of contact 35 and circular second surface of contact 36 that is arranged at the high position of the surrounding of the first surface of contact 35 of the lower position of the central portion that is arranged at circularly recess 34.Border between the first surface of contact 35 and the second surface of contact 36 becomes and vertical plane (calling step wall in the following text) vertical below dielectric layer 33, and between the first surface of contact 35 and the second surface of contact 36, the height of surface of contact changes step-likely.
On dielectric layer 33, be formed with the upper substrate 37 of the film-form being formed by conductive materials such as low-resistance silicon substrates.Upper substrate 37 cover recess 34 above.On upper substrate 37, by metal material, be provided with top electrode pad 40 and distribution 41, top electrode pad 40 and distribution 41 and upper substrate 37 conductings.And then, above upper substrate 37, pass through SiO
2or the dielectric film such as SiN or the diaphragm 39 that consists of resins such as polyimide cover.Top electrode pad 40 exposes from diaphragm 39.Like this, by the region of the horizontal development above recess 34 and in hollow in upper substrate 37 and diaphragm 39, be formed with the diaphragm 38 of pressure-sensitive use.
In this pressure transducer 11, diaphragm 38 is exerted pressure.Fig. 4 (A)-what (D) represent is the situation while having pressed diaphragm 38 with the soft leading section of pressing body 43.From Fig. 4 (A), to Fig. 4 (D) pressure, increase gradually.The variation of electric capacity is now as described below qualitatively.
During before the state not contacted with dielectric layer 33 to press compared with little pressure from diaphragm 38 contacts with dielectric layer 33 gently to diaphragm 38 as shown in Figure 4 (A), can think that the variation of the electric capacity between diaphragm 38 and fixed electorde 32 is little, and constant.Electric capacity (steady state value) now represents with Co.
When putting on the pressure of diaphragm 38, increase gradually and contact with the first surface of contact 35, and when the area S1 that diaphragm 38 contacts with the first surface of contact 35 as shown in Fig. 4 (B) increases gradually, the capacitor C between diaphragm 38 and fixed electorde 32 just changes thereupon as formula 2 below.
C=Co+(ε/d1) S1(formula 2)
Or, if by Δ C=(C-Co) and/Co is while being defined as than electric capacity, becomes
Δ C=(C-Co)/Co=(ε S1)/(d1Co) (formula 3).
At this, ε is the specific inductive capacity of dielectric layer 33, and d1 is the dielectric layer 33(contact area under the first surface of contact 35) thickness.
When putting on that the pressure of diaphragm 38 increases and diaphragm 38 while touching the upper end of step wall, diaphragm 38 just starts to contact with the second surface of contact 36 gradually therefrom.As shown in Fig. 4 (C), if establish the Maximum Contact area to the first surface of contact 35 of diaphragm 38, be S1max, capacitor C when diaphragm 38 contacts with the angle (upper end of step wall) of the second surface of contact 36 just represents by formula 4 below.
C=Co+(ε/d1) S1max(formula 4)
Or, Δ C=(C-Co) and/Co=(ε S1mac)/(d1Co) (formula 5)
When putting on the pressure of diaphragm 38 and further increase, the area that diaphragm 38 contacts with the second surface of contact 36 just increases gradually.Capacitor C when diaphragm 38 contacts with the second surface of contact 36 with contact area S2 represents by formula 6 below.
C=Co+(ε/d1) S1max+(ε/d2) S2(formula 6)
Or, Δ C=(ε S1mac) and/(d1Co)+(ε S2)/(d2Co) (formula 7)
At this, d2 is the dielectric layer 33(contact area under the second surface of contact 36) thickness.
The coefficient of the contact area S1 of above-mentioned formula 3 is different with the coefficient of the contact area S2 of above-mentioned formula 7.The variation pattern of the pressure-capacitance characteristic when variation pattern of pressure-capacitance characteristic when therefore, known diaphragm 38 contacts from the first surface of contact 35 contacts with the second surface of contact 36 with diaphragm 38 is different.Particularly, when the known thickness d 2 when the dielectric layer 33 under thickness d 1 to the second surface of contact 36 of the dielectric layer 33 under the first surface of contact 35 is thin, the measurement sensitivity of lower pressure region just raises, and the measurement sensitivity in high pressure region just reduces.
In addition, when the contact area of diaphragm 38 increases, diaphragm 38 can Free Transform the area in region just diminish, therefore, the elasticity of diaphragm 38 just raises gradually.And, when the butt of the angle (upper end of step wall) of diaphragm 38 and the second surface of contact 36, diaphragm 38 can Free Transform the area in region will diminish discontinuously, therefore, in the front and back of the angle butt of diaphragm 38 and the second surface of contact 36, the elasticity of diaphragm 38 can sharply raise.This result is that under the state contacting with the first surface of contact 35 at diaphragm 38, measurement sensitivity raises, and under the state contacting, measures sensitivity at diaphragm 38 with the second surface of contact 36.Therefore, in the pressure transducer 31 of embodiment 1, even by this phenomenon, the measurement sensitivity of lower pressure region also raises, and the measurement sensitivity in high pressure region also reduces.
Fig. 5 is that the pressure-capacitance characteristic of pressure transducer (conventional example) that the pressure-capacitance characteristic of the pressure transducer of embodiment of the present invention 1 (embodiment 1) and non-patent literature 1 are recorded compares and the figure that represents.These characteristics obtain by simulating.What the transverse axis of Fig. 5 represented is pressure P, and that the longitudinal axis represents is the ratio electric capacity Δ C=(C-Co between diaphragm (movable electrode) and fixed electorde)/Co.At this, C is the electric capacity of pressure while being P, and Co is the electric capacity of non-contact area.
The contact area of diaphragm 38 roughly with P
n(wherein, 0 < n < 1) is directly proportional, and therefore, what the expressed pressure-capacitance characteristic of formula 2-4 was described is parabolic curve.Therefore, formula 2-4 and Fig. 5 match.
But, pressure-the capacitance characteristic of the pressure transducer of conventional example spreads all over whole region and the variation smoothly of parabolic shape ground, on the other hand, the front and back of the pressure P e during upper end butt of the step wall of the variation pattern of the pressure-capacitance characteristic of the pressure transducer of embodiment 1 between diaphragm 38 and first, second surface of contact 35,36 and different.
That is,, in the pressure transducer of conventional example, in the entirety of range, the variation pattern of measuring sensitivity all changes according to constant rule.Therefore, when with in lower pressure region, can obtain the mode of measurement sensitivity of this prestige while designing, the measurement sensitivity in high pressure region also determines therefrom, can not be at random in the mode that becomes high sensitivity in lower pressure region and become muting sensitivity in high pressure region, designs.Similarly, near the saturation degree of the electric capacity maximum pressure Pf of the range of pressure can not at random design.
On the other hand, in the pressure transducer 11 of embodiment of the present invention 1, at pressure, be less than Pe and under state (lower pressure region) that diaphragm 38 only contacts with the first surface of contact 35, to measure the mode that sensitivity raises, design.But, at pressure, be greater than Pe and under state (high pressure region) that diaphragm 38 also contacts with the second surface of contact 36, because the thickness d 1 of the dielectric layer 33 under thickness d 2 to the first surface of contact 35 of the dielectric layer 33 under the second surface of contact 36 is large, so it is low to measure remolding sensitivity lower pressure region.Therefore, according to embodiment 1, can be produced on measure in lower pressure region highly sensitive and at the low pressure transducer 11 of high pressure area inner measuring sensitivity.In addition, due to also can be low in the sensitivity of high pressure area inner measuring, therefore, by the thickness d 2 of dielectric layer 33 and the area of the second surface of contact 36 under suitable selection the second surface of contact 36, can approach its saturation value and mode that the variation of electric capacity reduces designs with electric capacity under the top pressure Pf at range.Thereby the situation that can roughly become top pressure Pf to the pressure P of measuring from the variation of electric capacity is surveyed.
Then, the manufacturing process of above-mentioned pressure transducer 11 is described.Fig. 6-Fig. 9 is the figure that represents particularly the manufacturing process of pressure transducer 11.In addition, in the manufacturing process of Fig. 6-Fig. 9, the operation of manufacturing a pressure transducer is described, but normally on wafer, once make multiple pressure transducers.
Pressure transducer 11 is divided into upper substrate side and fixed electorde side is manufactured.First, by Fig. 6 (A)-(E) manufacture method of upper substrate side is described.What Fig. 6 (A) represented is the state that is formed with the metal film 40a such as Al or Au on the upper substrate 37 consisting of silicon substrate etc. on whole by sputter or evaporation.Metal film 40a on upper substrate 37 forms pattern by photo-mask process, as shown in Fig. 6 (B), forms the top electrode pad 40 and the distribution 41 that metal film 40a, consist of on upper substrate 37.Next, as shown in Fig. 6 (C), by methods such as sputter or CVD, coatings, use SiO
2the diaphragm 39 forming Deng dielectric film or by polyimide resin material, covers whole above of upper substrate 37 from power on utmost point pad 40 and distribution 41.Diaphragm 39, on top electrode pad 40, partly arranges openning 50, and as shown in Fig. 6 (D), at least a portion of top electrode pad 40 is exposed from diaphragm 39.As by the method for diaphragm 39 openings, both can carry out dry-etching by reactant gas, also can use liquid (etching solution) to carry out Wet-type etching.After this, as shown in Fig. 6 (E), by carry out grinding and grinding or etching below upper substrate 37, carry out the thickness of attenuate upper substrate 37, form the diaphragm 38 of the film-form being formed by upper substrate 37 and diaphragm 39.
Then, by Fig. 7 (A)-(D) and Fig. 8 (A)-(C) manufacture method of fixed electorde side is described.What Fig. 7 (A) represented is on whole, by methods such as thermal oxide or sputter, CVD, to be formed with by SiO on the fixed electorde 32 consisting of low-resistance silicon substrate etc.
2, the dielectric film 33a that forms of the dielectric substance such as SiN, TEOS state.The step that the thick gauge of this dielectric film 33a is decided to be between the first surface of contact 35 and the second surface of contact 36 equates.This dielectric film 33a, by using the Wet-type etching of liquid or using the dry-etching of reactant gas to carry out etching, as shown in Fig. 7 (B), forms opening 51(the first opening at central portion).The opening 51 of dielectric film 33a is formed at the region roughly equal with the region that becomes recess 34.And then as shown in Fig. 7 (C), from dielectric film, 33a starts, on fixed electorde 32, on whole, use the dielectric substance identical with dielectric film 33a, form dielectric film 33b.This dielectric film 33b, by using the Wet-type etching of liquid or using the dry-etching of reactant gas to carry out etching, as shown in Fig. 7 (D), forms opening 52(the second opening at central portion).The opening 52 of dielectric film 33b is formed at area and is less than opening 51 region roughly equal with the first surface of contact 35.Then, as shown in Fig. 8 (A), from dielectric film, 33b starts, and on fixed electorde 32, on whole, by methods such as thermal oxide or sputter, CVD, utilizes the dielectric substance identical with dielectric film 33a, 33b, forms dielectric film 33c.This result is to form dielectric layer 33 by dielectric film 33a, 33b, 33c.In addition, also can form dielectric layer 33 by diverse ways with it.That is, also can be on the dielectric layer that thickness is larger 33 be formed at fixed electorde 32 after, dielectric layer 33 is carried out etching and forms the recess 34 with the first surface of contact 35 and the second surface of contact 36.
After this, as required, by carry out grinding and grinding or etching below fixed electorde 32, as shown in Fig. 8 (B), by the reduced thickness of fixed electorde 32.As shown in Fig. 8 (C), below fixed electorde 32, form the metal films such as Al or Au, carry out Wet-type etching with liquid, or utilize reactant gas to carry out dry-etching, metal film is formed to pattern, form bottom electrode pad 42.
After this, by normal temperature engage, the joint method such as melting joint, resin-bonded, eutectic joint, upper substrate 37 is bonded on dielectric layer 33, obtain the pressure transducer 31 as Fig. 9 (A).In addition, afterwards, as shown in Fig. 9 (B), also can below fixed electorde 32 and bottom electrode pad 42, on whole, form diaphragm 53, and on diaphragm 53, output openning 54 and bottom electrode pad 42 is exposed from openning 54.In addition, produce once multiple pressure transducer 11 by wafer in the situation that, after this, wafer is cut off, be cut into pressure transducer 11 one by one.
In addition,, in the operation of Fig. 7 (D), the opening 51 of Area Ratio dielectric film 33a of opening the opening 52 on dielectric film 33b is little, but also can be in contrast, makes the opening 52 of dielectric film 33b be greater than opening 51.
(embodiment 2)
Figure 10 (A) is the summary planimetric map of the pressure transducer 61 of embodiment of the present invention 2.Figure 10 (B) is the summary planimetric map of the dielectric layer 33 that uses of this pressure transducer 61.In this pressure transducer 61, recess 34, the first surface of contact 35, the second surface of contact 36 and diaphragm 38 are all formed as oblong-shaped.
According to this embodiment, after diaphragm 38 fully contacts with the first surface of contact 35 and the second surface of contact 36 on short side direction, surface of contact to the first surface of contact 35 and the second surface of contact 36 extends to long side direction, therefore, can obtain being different from the pressure-capacitance characteristic of embodiment 1.
In addition, the flat shape of recess 34 and the first surface of contact 35, the second surface of contact 36, except making circle or rectangle, also can be made into the various shapes such as square, ellipse, hexagon, octagon.
(embodiment 3)
Figure 11 is the summary sectional view of the pressure transducer 62 of embodiment of the present invention 3.In this pressure transducer 62, because the second surface of contact 36 oliquely downward tilts towards the first surface of contact 35, therefore, diaphragm 38 easily contacts with the second surface of contact 36.
(embodiment 4)
Figure 12 is the summary sectional view of the capacitance pressure transducer, 63 of the touch mode of embodiment of the present invention 4.In this pressure transducer 63, in the region relative with the central portion of diaphragm 38, make the outstanding and be formed with protuberance 71 above of fixed electorde 32.In addition, on the dielectric layer 33 on be formed at fixed electorde 32, and in the region relative with diaphragm 38, be formed with recess 34, in recess 34, being formed as above of dielectric layer 33 is smooth.Therefore, be arranged in the central portion of recess 34 and be positioned at protuberance 71 directly over the first surface of contact 35, the thickness attenuation of dielectric layer 33.In addition, be arranged in the peripheral part of recess 34 and lower than protuberance 71 with 72 relative the second surface of contact 36 above fixed electorde 32, the thickness thickening of dielectric layer 33.
In the pressure transducer 63 of embodiment 4, the surface of contact of diaphragm 38 is expanded to the second surface of contact 36 from the first surface of contact 35, and as shown in above-mentioned formula 2-7, electric capacity is along with the contact area of diaphragm 38 increases and changes.Thereby, when only contacting with the first surface of contact 35 when also contacting with the second surface of contact 36, the increase mode difference of electric capacity.That is, can be formed as measuring sensitivity and raise in area of low pressure, and in high-pressure area, measure sensitivity and reduce.
(embodiment 5)
Figure 13 is the summary sectional view of the capacitance pressure transducer, 64 of the touch mode of embodiment of the present invention 5.In this pressure transducer 64, on fixed electorde 32, be concaved with recess 34.In recess 34, be formed with the different multiple planes of height that record below fixed electorde 32.In illustrative example, be provided with the central portion that is positioned at recess 34 lower position the first plane 73 and be positioned at the second plane 74 of the high position of the surrounding of the first plane 73.Border between the first plane 73 and the second plane 74 becomes and vertical plane (step wall) vertical below fixed electorde 32, and between the first plane 73 and the second plane 74, the height of plane changes steppedly.
And then, on fixed electorde 32, be formed with the dielectric layer 33 of uniform thickness.Therefore, on dielectric layer 33, be also formed with recess 34, in recess 34, be formed with first surface of contact 35 and the second surface of contact 36 that is positioned at the high position in the second plane 74 of the lower position being positioned in the first plane 73.
In the pressure transducer 64 of embodiment 5, the even thickness of dielectric layer 33, but in recess 34, be formed with the surface of dielectric layer 33 steppedly.Therefore, as tdescribed in embodiment 1, at diaphragm 38 during with angle (upper end of the step wall) butt of the second surface of contact 36, diaphragm 38 can Free Transform the area in region can reduce discontinuously, therefore, in the front and back of the angle butt of diaphragm 38 and the second surface of contact 36, the elasticity of diaphragm 38 can raise sharp.This result is that under the state contacting with the first surface of contact 35 at diaphragm 38, measurement sensitivity raises, and under the state contacting, measures sensitivity at diaphragm 38 with the second surface of contact 36.Thereby in the pressure transducer 31 of embodiment 1, by this phenomenon, the measurement sensitivity of lower pressure region also raises, the measurement sensitivity in high pressure region also reduces.
(embodiment 6)
Figure 14 is the summary sectional view of the capacitance pressure transducer, 65 of the touch mode of embodiment of the present invention 6.In this pressure transducer 65, on fixed electorde 32, be formed with dielectric layer 75,76, on dielectric layer 75,76, be concaved with recess 34.In bottom surface in recess 34, the central portion of recess 34 is formed by the larger dielectric layer 76 of specific inductive capacity, and the peripheral part of recess 34 is formed by the less dielectric layer 75 of specific inductive capacity.And, in recess 34, above dielectric layer 76, become the first surface of contact 35, above dielectric layer 75, become the second surface of contact 36.In addition, in the bottom surface of recess 34, the thickness of the thickness of dielectric layer 75 and dielectric layer 76 is roughly equal, and the first surface of contact 35 and the second surface of contact 36 become the tabular surface of equal height.
In this pressure transducer 65, even if being pressed, diaphragm 38 contacts with dielectric layer 75,75, the variation of the capacitor C between diaphragm 38 and fixed electorde 32 is also little, can think constant.When with Co, represent now electric capacity (steady state value) time, the ratio electric capacity Δ C=(C-Co between diaphragm 38 and fixed electorde 32)/Co just changes as follows like that.
Being exerted pressure, diaphragm 38 contacts with the first surface of contact 35 and when area S1 that diaphragm 38 contacts with the first surface of contact 35 increases gradually, the ratio electric capacity Δ C between diaphragm 38 and fixed electorde 32 changes as formula 8 below.
Δ C=(ε 1S1)/(dCo) (formula 8)
At this, ε 1 is the specific inductive capacity of dielectric layer 76, and d is the thickness of the dielectric layer 75,76 of the bottom surface of recess 34.
At the pressure that puts on diaphragm 38, increase and the surface of contact of diaphragm 38 during to whole expansion of the first surface of contact 35, if establishing the area of the first surface of contact 35 is S1max, ratio electric capacity Δ C now represents by formula 9 below.
Δ C=(ε 1S1mac)/(dCo) (formula 9)
At the pressure that puts on diaphragm 38, further increase and the surface of contact of diaphragm 38 while expanding to the second surface of contact 36, when establishing the contact area of diaphragm 38 and the second surface of contact 36, be S2, and when the specific inductive capacity of establishing dielectric layer 75 is ε 2, than electric capacity Δ C, by formula 10 below, represent.
Δ C=(ε 1S1mac)/(dCo)+(ε 2S2)/(dCo) (formula 10)
The coefficient of the contact area S1 of above-mentioned formula 8 is different with the coefficient of the contact area S2 of above-mentioned formula 10.The variation pattern of the pressure-capacitance characteristic when variation pattern of pressure-capacitance characteristic when therefore, known diaphragm 38 contacts from the first surface of contact 35 contacts with the second surface of contact 36 with diaphragm 38 is different.Particularly, when the DIELECTRIC CONSTANT ε 2 of the dielectric layer 75 under DIELECTRIC CONSTANT ε 1 to the second surface of contact 36 of the dielectric layer 76 under the first surface of contact 35 is large, the measurement sensitivity of lower pressure region just raises, and the measurement sensitivity in high pressure region just reduces.
(embodiment 7)
Figure 15 is the sectional view that represents the structure of for example touch panel of flat input media 81 of embodiment of the present invention 7.This input media 81 is that multiple detecting means 82 with the structure same with pressure transducer of the present invention are arranged in to the device that array-like (for example, rectangular-shaped or cellular) forms.In addition, each detecting means 82 electric independence respectively, can detect respectively the pressure that puts on each detecting means 82 independently.According to this input media 81, can detect as touch panel and to wait the point of pressing with finger, and also can detect each point by Compressive Strength.
Claims (16)
1. a capacitance pressure transducer,, possesses:
Fixed electorde;
Be formed at the dielectric layer of the top of described fixed electorde;
The diaphragm of the electric conductivity forming across gap above described dielectric layer, is characterized in that,
The part relative with described diaphragm in described dielectric layer has the multiple contact areas for contacting with described diaphragm,
When the thickness of described dielectric layer is made as to d, when the specific inductive capacity of described dielectric layer is made as to ε, on the mutual border of described each contact area, its value than ε/d changes discontinuously.
2. capacitance pressure transducer, as claimed in claim 1, is characterized in that,
On the mutual border of described each contact area, the thickness of described dielectric layer changes discontinuously.
3. capacitance pressure transducer, as claimed in claim 2, is characterized in that,
On the mutual border of described each contact area, the surface of described dielectric layer has stair-stepping step.
4. capacitance pressure transducer, as claimed in claim 3, is characterized in that,
The surface of described each contact area is under the state of not exerting pressure, and its distance apart from described diaphragm is mutually different.
5. capacitance pressure transducer, as claimed in claim 1, is characterized in that,
When putting on the pressure increase of described diaphragm, described diaphragm contacts with the described contact area less than the value of ε/d successively.
6. capacitance pressure transducer, as claimed in claim 3, is characterized in that,
In the case of described diaphragm being applied with to the pressure of increase gradually, the surface of described each contact area raises according to the order of described diaphragm contact successively at the height recording from the bottom surface of described dielectric layer.
7. capacitance pressure transducer, as claimed in claim 2, is characterized in that,
The surface of described each contact area is smooth face.
8. capacitance pressure transducer, as claimed in claim 7, is characterized in that,
In the region relative with described diaphragm, on described fixed electorde, be formed with stair-stepping step.
9. capacitance pressure transducer, as claimed in claim 2, is characterized in that,
In the case of described diaphragm being applied with to the pressure of increase gradually, the thickness of the dielectric layer under described surface of contact is according to the order thickening successively of described diaphragm contact.
10. capacitance pressure transducer, as claimed in claim 1, is characterized in that,
The surface of described contact area is under the state of not exerting pressure, and it is the plane parallel with described diaphragm.
11. capacitance pressure transducer,s as claimed in claim 1, is characterized in that,
On the mutual border of described each contact area, the specific inductive capacity of described dielectric layer changes discontinuously.
12. 1 kinds of capacitance pressure transducer,s, it possesses:
Fixed electorde;
Be formed at the dielectric layer of the top of described fixed electorde;
The diaphragm of the electric conductivity forming across gap above described dielectric layer, is characterized in that,
The part relative with described diaphragm in described dielectric layer has the multiple contact areas for contacting with described diaphragm,
On the mutual border of described each contact area, the surface of described dielectric layer has stair-stepping step.
The manufacture method of 13. 1 kinds of capacitance pressure transducer,s, it possesses following operation for the manufacture of capacitance pressure transducer, claimed in claim 3:
Above described fixed electorde, form the first dielectric film;
By etching, partly remove described the first dielectric film and form first opening with stepped edges;
From described the first dielectric film, above described fixed electorde, form the second dielectric film;
By etching, partly remove described the second dielectric film and form second opening with stepped edges;
From described the first dielectric film and described the second dielectric film, above described fixed electorde, form the 3rd dielectric film.
The manufacture method of 14. capacitance pressure transducer,s as claimed in claim 13, is characterized in that,
Described in the Area Ratio of described the second opening, the first opening is little.
The manufacture method of 15. capacitance pressure transducer,s as claimed in claim 13, is characterized in that,
Described in the Area Ratio of described the second opening, the first opening is large.
16. 1 kinds of input medias, it is equipped with pressure transducer claimed in claim 1.
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| JP2011249181A JP5737148B2 (en) | 2011-11-14 | 2011-11-14 | Capacitive pressure sensor, method for manufacturing the same, and input device |
| JP2011-249181 | 2011-11-14 | ||
| PCT/JP2012/079314 WO2013073506A1 (en) | 2011-11-14 | 2012-11-12 | Capacitance type pressure sensor, method for manufacturing same, and input device |
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| CN103765179A true CN103765179A (en) | 2014-04-30 |
| CN103765179B CN103765179B (en) | 2016-08-17 |
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| JP (1) | JP5737148B2 (en) |
| KR (1) | KR101553786B1 (en) |
| CN (1) | CN103765179B (en) |
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Also Published As
| Publication number | Publication date |
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| JP2013104797A (en) | 2013-05-30 |
| JP5737148B2 (en) | 2015-06-17 |
| WO2013073506A1 (en) | 2013-05-23 |
| KR101553786B1 (en) | 2015-09-16 |
| KR20140048996A (en) | 2014-04-24 |
| TWI529379B (en) | 2016-04-11 |
| CN103765179B (en) | 2016-08-17 |
| TW201319537A (en) | 2013-05-16 |
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