CN103762882B - Asymmetric Pulse Topology and Surface Treatment Method for Plasma Electrolytic Oxidation - Google Patents
Asymmetric Pulse Topology and Surface Treatment Method for Plasma Electrolytic Oxidation Download PDFInfo
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- CN103762882B CN103762882B CN201410027303.2A CN201410027303A CN103762882B CN 103762882 B CN103762882 B CN 103762882B CN 201410027303 A CN201410027303 A CN 201410027303A CN 103762882 B CN103762882 B CN 103762882B
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- 238000007745 plasma electrolytic oxidation reaction Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004381 surface treatment Methods 0.000 title abstract description 5
- 238000012545 processing Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 239000003792 electrolyte Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 10
- 238000010891 electric arc Methods 0.000 abstract description 3
- 230000002457 bidirectional effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910001234 light alloy Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
The invention discloses an asymmetric pulse topology and surface treatment method for plasma electrolytic oxidation, wherein the asymmetric pulse is used for carrying out the technological process of plasma electrolytic oxidation when the output voltage is positive, and a ceramic layer is in a growth stage; when the output voltage is negative, the ceramic layer is discontinuously grown, the power supply cleans the surface of the workpiece, and the electric arc generated during processing is extinguished, so that the roughness of the ceramic layer on the surface of the workpiece is reduced, and the surface is compact and smooth.
Description
Technical field
The invention belongs to power supply technical field, be specifically related to a kind of for plasma electrolytic oxidation
Asymmetric impulse topology, the method that the invention still further relates to use above topology to carry out surface process.
Background technology
Plasma electrolytic oxidation, also known as differential arc oxidation, is in suitable electrolyte by this technology, treats
As anode, rustless steel, as negative electrode, then applies light-alloy alloys such as () aluminum, magnesium, titaniums processed
Suitably electric field, thus produce the courses of reaction such as the chemistry of complexity, electrochemistry, plasma so that
Metal surface growth in situ goes out to have the ceramic coating of the excellent properties such as densification, wear-resisting, anti-corrosion, insulation,
Thus reach the purpose of surfacecti proteon.This technology is controlled by controlling the composition of electrical quantity and regulation electrolyte
The structure of oxygenerating film and thickness.In actual application, plasma electrolytic oxidation used electric field shape
Formula mainly has the modes such as direct current, unidirectional pulse, bidirectional pulse.And bidirectional pulse is at the base of unidirectional positive pulse
Superposition negative-going pulse on plinth, the addition of negative-going pulse to promoting that ceramic layer performance boost has greater advantage,
The anion in solution can be attracted so that it is be diffused near anode so that oxidation is anti-when positive phase voltage
Should be more abundant, therefore make film layer more smooth, fine and close.The most gradually in application and research increasingly
It is used more.
Zeng Min, Wang Xiaodong et al. are published in " the contravariant differential arc oxidation of " welding journal " 6 phases in 2009
The development of power-supply device " literary composition proposes a kind of high power contravariant formula mao power source, it uses two
Level inversion transformation technique achieves bidirectional pulse, although have only to a set of DC source, but its negative-going pulse amplitude with
Direct impulse amplitude is identical, and amplitude is unadjustable, and too high negative sense amplitude is unfavorable for coating growth.
Publication No. CN1523745, publication date is on August 25th, 2004, entitled " for the differential of the arc
Oxidation the many waveform power source of high-frequency high-power " patent of invention disclose a kind of high frequency for differential arc oxidation
High-power many waveform power source, it use 4 power switch pipes and two groups of DC sources achieve two-way the most right
Claiming pulse, though the amplitude achieving direct impulse and negative-going pulse is asymmetric, but it uses two set DC sources
Make power supply architecture complicated, relatively costly.
The Novel asymmetric pulse topology that the present invention uses high-frequency coupling inductance to constitute solves and is currently used for
The problem needing two set DC sources in the plasma electrolytic oxidation power supply of two-way asymmetric pulses.Invent
A kind of novel two-way asymmetric impulse topology, its a set of DC source of use outputs two-way asymmetric pulses,
Can apply in plasma electrolytic oxidation power supply.The invention still further relates to use above topology to carry out surface
The method processed.
Summary of the invention
It is an object of the invention to provide a kind of asymmetric impulse topology for plasma electrolytic oxidation, solve
Having determined, it is big and need multichannel straight when producing bidirectional pulse to be currently used for plasma electrolytic oxidation power volume
The problem in stream source.
The method that it is another object of the present invention to use above topology to carry out surface process.
The technical solution adopted in the present invention is: for the asymmetric impulse topology of plasma electrolytic oxidation,
The coupling inductance that including DC source, is made up of inductance L1 and inductance L2, entirely control device for power switching, every
From driver, controller and plasma electrolytic oxidation work nest, the positive pole of DC source connects inductance L1
Same Name of Ends, the different name end of inductance L1 is connected with the Same Name of Ends of inductance L2, the different name end of inductance L2 with
Plasma electrolytic oxidation work nest one end connects；The other end of plasma electrolytic oxidation work nest is with complete
The emitter stage of control device for power switching connects, the emitter stage of full control device for power switching simultaneously with DC source
Negative pole connects, the colelctor electrode of full control device for power switching simultaneously with different name end, the inductance L2 of inductance L1
Same Name of Ends connect；It is also associated with driver for isolating, driver for isolating defeated on full control device for power switching
Enter end to be connected on an outfan of controller.
Another technical scheme of the present invention is, uses and is used for the asymmetric of plasma electrolytic oxidation
Pulse topology carries out the method for surface process, specifically implements according to following steps:
Step 1: processing workpiece is connected with the output cathode of DC source, immerses plasma electrolytic oxidation
In the electrolyte of work nest, the negative electrode in plasma electrolytic oxidation work nest and the output negative pole of DC source
Connect；
Step 2: start DC source, according to the technological requirement of processing workpiece set the voltage of DC source as
Between 0V～750V, electric current is between 1A～10A, between operating frequency 0～30kHz；By controlling
Device controls full control power switch periodically turn-on and turn-off, and ON time regulates in the range of 0～0.5T,
T is a complete switch periods, and when full control device for power switching turns off, forward voltage is applied to add
On work workpiece, now start, on processing workpiece, the oxide-film that growth technique requires；When full control power switch is led
Time logical, processing workpiece applying backward voltage, it is miscellaneous that backward voltage now is used on surface cleaning workpiece
Matter, improves coating quality, makes oxide-film finer and close；
Step 3: through 2 minutes～the course of processing of 60 minutes, turn off the output of DC source, end etc.
The course of processing of gas ions electrolytic oxidation, takes out processing workpiece, cleans surface solution.
The feature of the present invention also resides in,
One or more in analog circuit, single-chip microcomputer, DSP, FPGA selected by controller therein
Combination.
Full control device for power switching therein selects igbt or power MOS pipe.
Driver for isolating model therein selects 2SD315AI or EXB841.
The invention has the beneficial effects as follows:
The invention provides a kind of for plasma electrolytic oxidation asymmetric impulse topology, it exports pulse
Frequency, the power parameter continuously adjustabe such as pulse duration when pulse amplitude, it can be applied at plasma
In body electrolytic oxidation power supply.During topology work, full control device for power switching periodically break-make, by changing
Coupling inductance annexation in topology so that produce two-way asymmetric pulses in load.Entirely control power
The turn-on and turn-off frequency of switching device can be regulated between 0-30kHz by controller, each cycle
The ON time of interior full control device for power switching can regulate between 0-0.5T.By changing DC source
Input amplitude can change the amplitude of output direct impulse.Negative-going pulse amplitude can be by regulation coupling electricity
Inductance L1 and the inductance value ratio of inductance L2 in sense are adjusted, and range of accommodation is at 20:1 to 4:
Between 1.
The invention provides a kind of surface treatment method for plasma electrolytic oxidation, by using this
Asymmetry pulse in invention, is timing at output voltage, carries out the technique mistake of plasma electrolytic oxidation
Journey, ceramic layer is in growth stage；At output voltage for time negative, ceramic layer growth is interrupted, and power supply is to work
Part surface is carried out, and extinguishes and is adding the electric arc produced man-hour, makes surface of the work ceramic layer degree of roughness drop
Low, surface compact, smooth.
Accompanying drawing explanation
Fig. 1 is the present invention circuit diagram for the asymmetric impulse topology of plasma electrolytic oxidation；
Fig. 2 is the present invention output voltage waveforms for the asymmetric impulse topology of plasma electrolytic oxidation
Schematic diagram.
In figure, 1. DC source, 2. coupling inductance, the most entirely control device for power switching, 4. driver for isolating, 5.
Controller, 6. plasma electrolytic oxidation work nest, 7. processing workpiece.
Detailed description of the invention
The present invention for plasma electrolytic oxidation asymmetric impulse topology structure as it is shown in figure 1, it
The coupling inductance 2 by a DC source 1, being made up of inductance L1 and inductance L2, full control power switch device
Part 3, driver for isolating 4, controller 5 and plasma electrolytic oxidation work nest 6 form.
The positive pole of DC source 1 connects the Same Name of Ends of inductance L1, and the different name end of inductance L1 is with inductance L2's
Same Name of Ends connects, and the different name end of inductance L2 is connected with plasma electrolytic oxidation work nest 6 one end.Deng
The other end of gas ions electrolytic oxidation work nest 6 is connected, entirely with the emitter stage of full control device for power switching 3
The emitter stage of control device for power switching 3 is connected with the negative pole of DC source 1 simultaneously, entirely controls device for power switching
The colelctor electrode of 3 is connected with different name end, the Same Name of Ends of inductance L2 of inductance L1 simultaneously.Driver for isolating 4
Input connect controller 5 an outfan on.The present invention controls entirely to control power by controller 5
The turn-on and turn-off of switching device 3.When full control device for power switching 3 turns off, the inductance L1 of coupling
Connect with inductance L2 forward, provide a stable voltage or electric current for load.Full control power switch device
When part 3 turns on, inductance L1 and inductance L2 is equivalent to autotransformer after being coupled by magnetic core, in load
The voltage of upper one negative sense of generation or electric current.Voltage waveform in load is as in figure 2 it is shown, t in figure1Time
In section, full control device for power switching 3 turns on, t2In time period, full control device for power switching 3 turns off, and T is
One complete switch periods.
Controller 5 can use analog circuit, single-chip microcomputer, Digital Signal Processing (DSP), scene to compile
Journey gate array (FPGA) or its several combination, full control device for power switching 3 can use insulated gate
Bipolar transistor or power MOS pipe, driver for isolating 4 can use model be 2SD315AI,
The driver for isolating such as EXB841 or other similar be applicable to entirely control the driver of device for power switching 3.
The present invention controls entirely to control the turn-on and turn-off of device for power switching 3 by controller 5.When full control power is opened
When pass device 3 turns off, the inductance L1 of coupling and the series connection of inductance L2 forward, provide one to stablize for load
Voltage or electric current.When full control device for power switching 3 turns on, inductance L1 and inductance L2 passes through magnetic core coupling
It is equivalent to autotransformer after conjunction, load produces voltage or the electric current of a negative sense.Electricity in load
Corrugating is as in figure 2 it is shown, t in figure1In time period, full control device for power switching 3 turns on, the electricity in load
Pressure is+U1, t2In time period, full control device for power switching 3 turns off, and the voltage in load is-U2, T is
One complete switch periods.
The present invention is used to carry out surface process for the asymmetric impulse topology of plasma electrolytic oxidation
Method, specifically implements according to following steps:
Step 1: processing workpiece 7 is connected with the output cathode of DC source 1, immerses plasma electrolysis
In the electrolyte of oxidation work nest 6.Negative electrode in plasma electrolytic oxidation work nest 6 and DC source 1
Output negative pole connect.Concrete connected mode is as shown in Figure 1.
Step 2: start DC source 1, sets the voltage of DC source 1 according to the technological requirement of processing workpiece
For between 0V～750V, electric current is between 1A～10A, between operating frequency 0～30kHz.By control
Device 5 processed controls entirely to control power switch 3 periodically turn-on and turn-off, and its ON time can be 0～0.5T
In the range of regulate, when full control device for power switching 3 turns off, forward voltage is applied to process workpiece 7
On, now start, on processing workpiece 7, the oxide-film that growth technique requires.When full control power switch 3 turns on
Time, processing workpiece 7 applies backward voltage, backward voltage now can be used to surface cleaning workpiece 7
On impurity, improve coating quality, make oxide-film finer and close.
Step 3: through 2 minutes～the course of processing of 60 minutes, turn off the output of DC source 1, terminate
The course of processing of plasma electrolytic oxidation, takes out processing workpiece 7, cleans surface solution.
The invention provides a kind of for plasma electrolytic oxidation asymmetric impulse topology, by changing coupling
Close inductance 2 connected mode in circuit, solve in plasma electrolytic oxidation technique to realize
The problem needing two groups of DC sources during two-way asymmetric pulses, reduces the volume of power supply, simplifies circuit
Design, the topology of the present invention exports the power parameters such as the frequency of pulse, pulse duration when pulse amplitude even
Continuous adjustable.
The invention provides a kind of surface treatment method for plasma electrolytic oxidation, by using this
Asymmetry pulse in invention, is timing at output voltage, carries out the technique mistake of plasma electrolytic oxidation
Journey, ceramic layer is in growth stage；At output voltage for time negative, ceramic layer growth is interrupted, and power supply is to work
Part surface is carried out, and extinguishes and is adding the electric arc produced man-hour, makes surface of the work ceramic layer degree of roughness drop
Low, surface compact, smooth.
Claims (2)
1. for the asymmetric impulse topology of plasma electrolytic oxidation, it is characterised in that include DC source
(1) coupling inductance (2) that, is made up of inductance L1 and inductance L2, entirely control device for power switching (3),
Driver for isolating (4), controller (5) and plasma electrolytic oxidation work nest (6), DC source (1)
Positive pole connect inductance L1 Same Name of Ends, the different name end of inductance L1 is connected with the Same Name of Ends of inductance L2,
The different name end of inductance L2 is connected with plasma electrolytic oxidation work nest (6) one end；Plasma electrolysis
The other end of oxidation work nest (6) is connected with the emitter stage entirely controlling device for power switching (3), entirely controls merit
The emitter stage of rate switching device (3) is connected with the negative pole of DC source (1) simultaneously, full control power switch device
The colelctor electrode of part (3) is connected with different name end, the Same Name of Ends of inductance L2 of inductance L1 simultaneously；Entirely control merit
Being also associated with driver for isolating (4) on rate switching device (3), the input of driver for isolating (4) is even
It is connected on an outfan of controller (5)；
The one or several in analog circuit, single-chip microcomputer, DSP, FPGA selected by described controller (5)
The combination planted；
Described device for power switching (3) of entirely controlling selects igbt or power MOS pipe；
Described driver for isolating (4) model selects 2SD315AI or EXB841.
2. use the method that the asymmetric impulse topology being used for plasma electrolytic oxidation carries out surface process,
It is characterized in that, the asymmetric impulse topology for plasma electrolytic oxidation of employing, its structure is:
The coupling inductance (2) that including DC source (1), is made up of inductance L1 and inductance L2, entirely control power
Switching device (3), driver for isolating (4), controller (5) and plasma electrolytic oxidation work nest
(6), the positive pole of DC source (1) connects the Same Name of Ends of inductance L1, the different name end of inductance L1 and inductance
The Same Name of Ends of L2 connects, the different name end of inductance L2 and plasma electrolytic oxidation work nest (6) one end
Connect；The other end of plasma electrolytic oxidation work nest (6) with entirely control device for power switching (3)
Emitter stage connects, and the while of entirely controlling the emitter stage of device for power switching (3), the negative pole with DC source (1) connects
Connect, entirely control the colelctor electrode of device for power switching (3) simultaneously with the different name end of inductance L1, inductance L2
Same Name of Ends connects；Entirely controlling and be also associated with driver for isolating (4) on device for power switching (3), isolation is driven
The input of dynamic device (4) is connected on an outfan of controller (5)；
Specifically implement according to following steps:
Step 1: processing workpiece (7) be connected with the different name end of inductance L2, immerses plasma electrolysis
In the electrolyte of oxidation work nest (6), the negative electrode in plasma electrolytic oxidation work nest (6) is with straight
The output negative pole in stream source (1) connects；
Step 2: start DC source (1), sets DC source (1) according to the technological requirement of processing workpiece (7)
Voltage be between 0V～750V, electric current is between 1A～10A, between operating frequency 0～30kHz；
Controlling entirely to control power switch (3) periodically turn-on and turn-off by controller (5), ON time is 0～0.5T
In the range of regulate, when entirely control device for power switching (3) turn off time, forward voltage be applied to process work
On part (7), now process the oxide-film starting growth technique requirement on workpiece (7)；When entirely controlling power
During switch (3) conducting, processing workpiece (7) applies backward voltage, come with backward voltage now clear
Wash the impurity in processing workpiece (7), improve coating quality, make oxide-film finer and close；
Step 3: through 2 minutes～the course of processing of 60 minutes, turns off the output of DC source (1), knot
The course of processing of bundle plasma electrolytic oxidation, takes out processing workpiece (7), cleans surface solution；
The one or several in analog circuit, single-chip microcomputer, DSP, FPGA selected by described controller (5)
The combination planted；
Described device for power switching (3) of entirely controlling selects igbt or power MOS pipe；
Described driver for isolating (4) model selects 2SD315AI or EXB841.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410027303.2A CN103762882B (en) | 2014-01-21 | 2014-01-21 | Asymmetric Pulse Topology and Surface Treatment Method for Plasma Electrolytic Oxidation |
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| CN104646775B (en) * | 2015-02-04 | 2017-05-24 | 哈尔滨工业大学深圳研究生院 | Energy-saving type EDM (Electrical Discharge Machining) pulse power supply |
| CN110067013A (en) * | 2019-04-28 | 2019-07-30 | 西安理工大学 | A kind of more cathodes, which are staggered the time, is connected differential arc oxidation control method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103391008A (en) * | 2012-05-08 | 2013-11-13 | 快捷韩国半导体有限公司 | Switch control circuit, coupled inductor boost converter and driving method of the coupled inductor boost converter |
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| KR100590785B1 (en) * | 2004-05-24 | 2006-06-19 | 학교법인 포항공과대학교 | Power supply for PDP |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103391008A (en) * | 2012-05-08 | 2013-11-13 | 快捷韩国半导体有限公司 | Switch control circuit, coupled inductor boost converter and driving method of the coupled inductor boost converter |
Non-Patent Citations (1)
| Title |
|---|
| 变极性微弧氧化脉冲电源拓扑结构的研究;陈乘新;《中国优秀硕士学位论文全文数据库信息科技辑》;20120715(第7期);第5-7页第1.4节，图1-6、1-8 * |
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Effective date of registration: 20210510 Address after: Room 2208, unit 1, building 1, Qixing international apartment, southwest corner, intersection of Zhuque road and south 2nd Ring Road, Yanta District, Xi'an City, Shaanxi Province, 710075 Patentee after: Xi'an Tongrun Electronic Engineering Co.,Ltd. Address before: 710048 No. 5 Jinhua South Road, Shaanxi, Xi'an Patentee before: XI'AN University OF TECHNOLOGY |
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