CN103746036A - 一种金刚石辐射探测器的欧姆接触电极的制备方法 - Google Patents
一种金刚石辐射探测器的欧姆接触电极的制备方法 Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 26
- 239000010432 diamond Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 230000005855 radiation Effects 0.000 title claims abstract description 8
- 229910018885 Pt—Au Inorganic materials 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 14
- 239000010439 graphite Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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Abstract
本发明涉及一种金刚石辐射探测器的欧姆接触电极制备方法。属于金刚石辐射探测器制造工艺技术领域。本发明的要点是利用磁控溅射和离子溅射方法在金刚石薄膜上沉积制备C-Pt-Au三层体系,并在氮气气氛下退火,形成欧姆接触电极。本发明的三层C-Pt-Au欧姆电极是有较高的IV性能、较低的薄膜漏电流,其电阻率得到明显改善、使器件的性能得到提高。
Description
技术领域
本发明涉及的是一种金刚石辐射探测器的欧姆接触电极优化制备方法,属于金刚石辐射探测器制造工艺技术领域。
背景技术
金刚石是一种宽禁带半导体材料。一般来说,在宽禁带半导体上制作欧姆接触是比较困难的。通常是在金刚石薄膜上沉积一种能和金刚石反应生成碳化物的金属,并经过高温处理,使金属和金刚石在界面处发生碳化反应生成碳化物。
目前金刚石欧姆接触的电极结构主要采用金的单层体系和钛-铂-金三层体系。金具有优良的导电性和抗腐蚀能力,是理想的欧姆接触材料。铂起阻挡层的作用,既能阻挡金向钛和金刚石中扩散,又能阻挡钛向金中扩散,避免钛扩散到金层引起金的电阻升高。钛作为金刚石和金之间的中间层,与金刚石反应生成TiC,TiC的形成增强了附着力。但是,实验表明,金的热稳定性较差;钛的引入降低了欧姆接触的电阻率,同时在金刚石与钛界面形成钛的氧化物会导致极化现象和信号处理的不稳定性,而且钛的热稳定性依然不佳,很难形成良好的欧姆接触。
发明内容
本发明的目的是在金刚石薄膜上,设计制作C-Pt-Au三层体系的欧姆电极。
本发明的主要特点在于用非晶碳石墨替代钛作为中间层,起到了增强附着力的作用,避免了钛氧化物的极化现象,解决了钛-铂-金三层金属体系中热稳定性不佳的问题。
为达到上述目的,本发明C-Pt-Au三层体系欧姆电极的制备采用如下技术方案及步骤。
本发明是一种金刚石辐射探测器的欧姆接触电极制备方法,其特征在于具有以下的制备过程和步骤:
a、非晶碳石墨层的制备
采用纯碳靶,使用直流磁控溅射方法在单晶金刚石薄膜上溅射非晶碳石墨,系统的本底真空2×10-4到5×10-4Pa;溅射的工作气体是Ar气体, Ar的流量为10到15标准毫升/分;总气压在0.3-0.8Pa;溅射功率一般为90-120W;溅射时间为5-15分钟;非晶碳石墨层厚度为5-30nm;
b、金属Pt和Au的制备
采用Pt靶,通过离子溅射法在非晶碳石墨层上制备金属层Pt。溅射过程中,工作气压为0.75-0.85Pa,离子流1.8-2mA,溅射时间为12-15分钟,Pt层厚度40-60nm;溅射完成后,再采用Au靶,通过相同的工艺参数在Pt层上面溅射Au,Au层的厚度为120-160nm;
d、退火
采用传统的退火工艺,将制作好的电极在氮气氛下退火;退火温度为350-450℃,时间为10-20分钟;最终制得金刚石薄膜上的C-Pt-Au三层欧姆电极。
本发明同现有技术相比,有如下显著优点:
(1)本发明采用非晶碳石墨作为金属与金刚石的中间层,起到增强附着力的作用。
(2)由于用非晶碳石墨代替金属钛,避免了钛的氧化物引起的极化现象和信号处理的不稳定性,使得欧姆电极的热稳定性得到了很大的提高。
附图说明
图1为本发明C-Pt-Au三层体系欧姆电极的结构示意图。
图2为C-Pt-Au三层体系欧姆电极I-V测试曲线图。
具体实施方式
现将本发明的具体实施例叙述于后。
实施例
本实施例中的具体制备过程和步骤如下所述:
一、非晶碳层的制备
采用纯碳靶,使用直流磁控溅射方法在金刚石薄膜上溅射非晶碳石墨,系统的本底真空4×10-4Pa;溅射的工作气体是Ar气体, Ar的流量为10标准毫升/分;总气压为0.5Pa;溅射功率为100W;溅射时间15分钟;非晶碳石墨层厚度为20nm。
二、金属Pt层和Au层的制备
采用Pt靶,通过离子溅射法在非晶碳石墨上制备金属层Pt。溅射过程中,工作气压0. 8Pa,离子流1.8mA,溅射时间为15分钟,Pt层厚度50nm。溅射完成后,再采用Au靶,通过相同的工艺参数在Pt层上面溅射Au,Au层的厚度为150nm。
三、退火
采用传统的退火工艺,将制作好的电极在氮气氛下退火。退火温度为400℃,时间为15分钟。最终制得金刚石薄膜上的C-Pt-Au三层欧姆电极。
对C-Pt-Au三层体系欧姆电极进行性能测试,结果显示能获得线性度极高的IV测试曲线,相对于退火前薄膜漏电流显著降低,电阻率得到明显改善,使器件性能得到提高。
图1为本发明C-Pt-Au三层体系欧姆电极结构示意图。图中可见,在金刚石薄膜上下两个表面设有两个相同的欧姆接触电极,其结构均为C-Pt-Au三层。
图2为本发明的C-Pt-Au三层体系欧姆电极I-V测试曲线图。图中可见,C-Pt-Au电极漏电流比Ti-Pt-Au电极小,而且更符合欧姆接触的线性关系。
Claims (1)
1.一种金刚石辐射探测器的欧姆接触电极的制备方法,其特征在于具有以下的制备过程和步骤:
a、非晶碳石墨层的制备
采用纯碳靶,使用直流磁控溅射方法在单晶金刚石薄膜上溅射非晶碳石墨,系统的本底真空2×10-4到5×10-4Pa;溅射的工作气体是Ar气体, Ar的流量为10到15标准毫升/分;总气压在0.3-0.8Pa;溅射功率一般为90-120W;溅射时间为5-15分钟;非晶碳石墨层厚度为5-30nm;
b、金属Pt和Au的制备
采用Pt靶,通过离子溅射法在非晶碳石墨层上制备金属层Pt;溅射过程中,工作气压为0.75-0.85Pa,离子流1.8-2mA,溅射时间为12-15分钟,Pt层厚度40-60nm;溅射完成后,再采用Au靶,通过相同的工艺参数在Pt层上面溅射Au,Au层的厚度为120-160nm;
c、退火
采用传统的退火工艺,将制作好的电极在氮气氛下退火;退火温度为350-450℃,时间为10-20分钟;最终制得金刚石薄膜上的C-Pt-Au三层欧姆电极。
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Cited By (3)
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CN105895740A (zh) * | 2016-05-14 | 2016-08-24 | 上海大学 | 一种金刚石辐射探测器用石墨烯-金复合电极的制备方法 |
CN106057968A (zh) * | 2016-06-12 | 2016-10-26 | 上海大学 | 一种金刚石辐射探测器用石墨烯‑金复合电极的制备方法 |
CN113109858A (zh) * | 2021-04-13 | 2021-07-13 | 中北大学 | 一种高度集成的γ辐照探测器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055424A (en) * | 1989-06-29 | 1991-10-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating ohmic contacts on semiconducting diamond |
CN102403209A (zh) * | 2011-11-10 | 2012-04-04 | 上海大学 | 一种基于金刚石薄膜场效应晶体管欧姆接触电极的制备方法 |
CN103077963A (zh) * | 2013-01-07 | 2013-05-01 | 浙江大学 | 一种欧姆接触电极、其制备方法及包含该欧姆接触电极的半导体元件 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5055424A (en) * | 1989-06-29 | 1991-10-08 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating ohmic contacts on semiconducting diamond |
CN102403209A (zh) * | 2011-11-10 | 2012-04-04 | 上海大学 | 一种基于金刚石薄膜场效应晶体管欧姆接触电极的制备方法 |
CN103077963A (zh) * | 2013-01-07 | 2013-05-01 | 浙江大学 | 一种欧姆接触电极、其制备方法及包含该欧姆接触电极的半导体元件 |
Non-Patent Citations (2)
Title |
---|
A.BENMOUSSA ET AL: "Performance of diamond detectors for VUV applications", 《NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A》 * |
王兰: "电流型CVD金刚石探测器研制", 《中国博士论文全文数据库》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105895740A (zh) * | 2016-05-14 | 2016-08-24 | 上海大学 | 一种金刚石辐射探测器用石墨烯-金复合电极的制备方法 |
CN106057968A (zh) * | 2016-06-12 | 2016-10-26 | 上海大学 | 一种金刚石辐射探测器用石墨烯‑金复合电极的制备方法 |
CN113109858A (zh) * | 2021-04-13 | 2021-07-13 | 中北大学 | 一种高度集成的γ辐照探测器 |
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