CN103745984B - It can measure pel array, imaging sensor and the method for incident light angle - Google Patents
It can measure pel array, imaging sensor and the method for incident light angle Download PDFInfo
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Abstract
The invention discloses a kind of pel array, imaging sensor and the methods of measurable incident light angle.Imaging sensor its include successively from top to bottom：Substrate is provided with sensor layer in the substrate, and the incident light for sensing carries out opto-electronic conversion；Metal layer, for the electric signal transmission of opto-electronic conversion to be handled to peripheral circuit；Microlens layer, refraction processing is carried out respectively for the incident light that the microlens layer normal left and right sides is generally aligned in the same plane and incident angle is different will to be located at, form the incident light of sensor layer photosurface described in vertical incidence, according to the sensitivity angle of incident light in the microlens layer and corresponding pixel address mapping relations, to obtain the angle information of the incident light on microlens layer surface described in directive.
Description
Technical field
The invention belongs to field of image sensors, specifically, be related to a kind of pel array of measurable incident light angle,
Imaging sensor and method.
Background technology
Imaging sensor is widely used in civilian and commercial category.At present, imaging sensor is schemed by CMOS
As sensor（CMOS IMAGE SENSOR, hereinafter referred to as CIS）And charge-coupled image sensor（Charge-coupled
Device, hereinafter referred to as CCD）.Compared with ccd image sensor, although cmos image sensor has Rolling
Shutter Effect and the relatively low disadvantage of signal-to-noise ratio, but cmos image sensor also have manufacture it is at low cost, low in energy consumption with
And the smaller advantage of image delay.With the progress of technique, the Rolling shutter effect of cmos image sensor（Rolling
Shutter Effect）It is gradually overcome with signal-to-noise ratio disadvantage, overall performance is gradually with ccd image sensor to matching in excellence or beauty.
Cmos image sensor is in mobile phone camera, IP Camera, monitoring camera, optical mouse, digital single-lens reflex camera
It is widely applied in fact.CMOS active pixel sensor is normally based in the cmos image sensor that these fields use
（Active Pixel Sensor, abbreviation APS）The pel array of the pixel unit composition imaging sensor of formation.
It is formed based on APS, the principle of the image captured is：Utilize a light sensitive diode（Photo diode, referred to as
PD）It receives the photon of incident light and carries out opto-electronic conversion output voltage signal, then gone by subsequent conditioning circuit such as amplifying circuit, filtering
The processing such as noise cancellation circuit, final output form picture signal.Incident light is stronger, and the voltage signal of output is bigger.
It can be seen that the imaging sensor based on APS, it, can only output-response only directly to the light intensity of incident light sensitivity
The voltage signal of incident intensity, and for the other information in incident light in addition to intensity, then it usually can not directly react.
In the prior art, although by means of certain algorithm process, such as light field（Light Fileld）Algorithm also may be used
To reflect such as angle of the other information in incident light in addition to intensity indirectly.But dependent on the algorithm additionally introduced, therefore,
It can not realize the optimization of system.
Invention content
The technical problems to be solved by the invention are to provide a kind of pel array, the image sensing of measurable incident light angle
Device and method partly or entirely to overcome, partly or entirely solve above-mentioned technical problem of the existing technology.
In order to solve the above technical problem, the present invention provides a kind of pel array of measurable incident light angle, from
Under include successively to upper：
Substrate is provided with sensor layer in the substrate, and the incident light for sensing carries out opto-electronic conversion；
Metal layer, for the electric signal transmission of opto-electronic conversion to be handled to peripheral circuit；
Microlens layer, for that will be located at, the microlens layer normal left and right sides will be generally aligned in the same plane and incident angle is different
Incident light carry out refraction processing respectively, the incident light of sensor layer photosurface described in vertical incidence is formed, with according to described micro-
The sensitivity angle of incident light and corresponding pixel address mapping relations in lens jacket obtain entering for microlens layer surface described in directive
Penetrate the angle of light.
Preferably, in one embodiment of this invention, the metal layer is arranged in the middle layer of silica material.
Preferably, in one embodiment of this invention, the microlens layer includes left-hand microlens layer and dextrad lenticule
Layer, the left-hand microlens layer are used to carry out refraction processing, shape to being located at the different incident light of incident angle on the left of its normal
Into the incident light of sensor layer photosurface described in vertical incidence, dextrad microlens layer, for being located at the incidence on the right side of its normal
The different incident light of angle carries out refraction processing, forms the incident light of sensor layer photosurface described in vertical incidence.
Preferably, in one embodiment of this invention, in left-hand microlens layer and dextrad microlens layer each lenticule according to
The sensitivity angle size sequential arrangement of incident light.
Preferably, in one embodiment of this invention, left-hand microlens layer and dextrad microlens layer are included by incident light
Sensitivity angle size it is identical multiple lenticules composition lenticule group, according to the sensitivity angle size sequential of incident light
Arrange the lenticule group.
In order to solve the above technical problem, the present invention provides a kind of New Image biographies of measurable incident light angle information
Sensor, including any of the above-described pel array.
In order to solve the above technical problem, the present invention provides it is a kind of measure incident light angle information method, including：
The incident light being generally aligned in the same plane at left and right sides of the microlens layer normal and incident angle is different is distinguished
Refraction processing is carried out, forms the incident light of sensor layer photosurface described in vertical incidence；
Electric signal output is obtained to the incident light progress opto-electronic conversion sensed to be handled to obtain pixel to peripheral circuit
Address；
According to the sensitivity angle of incident light in the microlens layer and the pixel address mapping relations, obtain described in directive
The angle of the incident light on microlens layer surface.
Preferably, in one embodiment of this invention, it will be located at left and right sides of the microlens layer normal and be located at same put down
The face and different incident light of incident angle carries out refraction processing respectively, forms the incidence of sensor layer photosurface described in vertical incidence
Light includes：
Refraction processing will be carried out to being located at the different incident light of incident angle on the left of its normal, formed described in vertical incidence
The incident light of photosurface on the left of sensor layer；
The different incident light of incident angle on the right side of its normal is subjected to refraction processing, forms biography described in vertical incidence
The incident light of photosurface on the right side of sensor layer.
Preferably, in one embodiment of this invention, by the identical multiple lenticule groups of the sensitivity angle size of incident light
Into lenticule group, the lenticule group is arranged according to the sensitivity angle size sequential of incident light, to form vertical incidence
The incident light of the sensor layer photosurface.
Compared with currently existing scheme, in the present invention, microlens layer will be located at left and right sides of the microlens layer normal and be located at
The same plane and different incident light of incident angle carries out refraction processing respectively, forms sensor layer photosurface described in vertical incidence
Incident light, according to the sensitivity angle of incident light in the microlens layer and corresponding pixel address mapping relations, to be penetrated
To the angle of the incident light on the microlens layer surface.
Description of the drawings
Fig. 1 is pel array linear array schematic diagram in the embodiment of the present invention one；
Fig. 2 is the sectional view of some pixel in pel array of the embodiment of the present invention；
Fig. 3 is that sectional view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention one；
Fig. 4 is that sectional view is unfolded in the row pixel R linear arrays of pel array in the embodiment of the present invention one；
Fig. 5 is that plan view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention one；
Fig. 6 is that plan view is unfolded in the row pixel R linear arrays of pel array in the embodiment of the present invention one；
Fig. 7 is that sectional view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention two；
Fig. 8 is that sectional view is unfolded in the row pixel R linear arrays of pel array in the embodiment of the present invention two；
Fig. 9 is that plan view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention two；
Figure 10 is that plan view is unfolded in the row pixel R linear arrays of pel array in the embodiment of the present invention two；
Figure 11 is that plan view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention three；
Figure 12 is that plan view is unfolded in the row pixel R linear arrays of pel array in the embodiment of the present invention three；
Figure 13 is the method flow diagram that incident light angle information is measured in the embodiment of the present invention four.
Specific embodiment
Carry out the embodiment that the present invention will be described in detail below in conjunction with schema and embodiment, thereby how the present invention is applied
Technological means can fully understand and implement according to this to solve technical problem and reach the realization process of technical effect.
In the present invention, microlens layer will be generally aligned in the same plane at left and right sides of the microlens layer normal and incident angle
Different incident lights carries out refraction processing respectively, the incident light of sensor layer photosurface described in vertical incidence is formed, with according to institute
The sensitivity angle of incident light and corresponding pixel address mapping relations in microlens layer are stated, obtain microlens layer surface described in directive
Incident light angle.
The main thought of the present invention：
The following embodiments of the present invention provide a kind of pel array of measurable incident light angle, wrap successively from top to bottom
It includes：Substrate is provided with sensor layer in the substrate, and the incident light for sensing carries out opto-electronic conversion；Metal layer, for inciting somebody to action
The electric signal transmission of opto-electronic conversion is handled to peripheral circuit；Microlens layer, it is left for the microlens layer normal will to be located at
The incident light that right both sides are generally aligned in the same plane and incident angle is different carries out refraction processing respectively, forms sensing described in vertical incidence
The incident light of device layer photosurface is closed with being mapped according to the sensitivity angle of incident light in the microlens layer with corresponding pixel address
System obtains the angle of the incident light on microlens layer surface described in directive.
It is described briefly for the above-mentioned thought to the present invention, in the following embodiments of the present invention, filter is not included with pel array
Mirror layer is illustrated for only acquiring gray level image.Certainly, to those skilled in the art, in main think of of the invention
Under the inspiration thought and with reference to related art, without creative work, you can apply to wrap the main thought of the present invention
The pel array of coloured image can be acquired by including filter, in detail in following embodiments of the present invention, will not be described in great detail.
In the following embodiments of the present invention, left-hand microlens layer and dextrad microlens layer are specifically included with the microlens layer,
The left-hand microlens layer is used to carry out refraction processing to being located at the different incident light of incident angle on the left of its normal, is formed and hung down
The incident light of the straight incident sensor layer photosurface, dextrad microlens layer, for being located at the incident angle on the right side of its normal
Different incident lights carries out refraction processing, forms the incident light of sensor layer photosurface described in vertical incidence.Certainly for ability
For the those of ordinary skill in domain, only realization will be located at the microlens layer normal for left-hand microlens layer and dextrad microlens layer
The incident light that the left and right sides is generally aligned in the same plane and incident angle is different carries out refraction processing and forms biography described in vertical incidence respectively
A kind of concrete mode of the incident light of sensor layer photosurface.Under the inspiration of the main thought of the present invention, without creative work,
It is also contemplated that other equivalents, repeat no more in detail.
Fig. 1 is pel array linear array schematic diagram in the embodiment of the present invention one；As shown in Figure 1, along row direction according to
Secondary is corresponding row pixel R, LRLR..... the arrangement form picture of the right left-hand microlens layers of the corresponding row pixel L of left-hand microlens layer
Pixel array.
Fig. 2 is the sectional view of some pixel in pel array of the embodiment of the present invention, as shown in Fig. 2, it is from top to bottom
Include successively：Substrate 201, metal layer 202, microlens layer 203.Wherein：
Sensor layer 211 is provided in the substrate 201, for carrying out opto-electronic conversion to the incident light in light-path；Tool
Body, which is made of multiple light sensitive diodes.
Metal layer 202 is used for the electric signal transmission of opto-electronic conversion to peripheral circuit（It is not shown in figure）It is handled.This
In implementation, the metal layer 202 is arranged in the middle layer 200 of silica material.
Microlens layer 203 is generally aligned in the same plane and incidence angle for that will be located at the 203 normal left/right side of microlens layer
It spends different incident lights and carries out refraction processing respectively, form the incident light of sensor layer photosurface described in vertical incidence.According to institute
The sensitivity angle of incident light and corresponding pixel address mapping relations in microlens layer 203 are stated, obtain microlens layer described in directive
The angle of the incident light on surface.Microlens layer 203 is by several lenticules 213.
Fig. 3 is that sectional view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention one, and Fig. 4 is the present invention
The row pixel R linear arrays expansion sectional view of pel array in embodiment one, as shown in Figure 3 and Figure 4, for convenience of description,
In the case of not influencing to the present invention above-mentioned major technique thought explanation, substrate in Fig. 2, photosensitive unit, gold are omitted in Fig. 3
Belong to the structures such as layer, only illustrate lenticule 213.It is as described below in detail.
As shown in figure 3, in row pixel L linear arrays, it is corresponding by each pixel by the targeted selection of lenticule 213
Sensitive radiation direction is set as upper left side injection, and direction from left to right, lenticule 213 is to the sensitivity angle maximum of incident light
For a, minimum 0, i.e., it is parallel with normal F.Each lenticule 213 handles its sensitive refracting light incident, forms vertical incidence
The incident light of light sensitive diode photosurface.
As shown in figure 4, in row pixel R linear arrays, it is corresponding by each pixel by the targeted selection of lenticule 213
Sensitive radiation direction is set as upper right side injection, and direction from right to left, lenticule 213 is to the sensitivity angle maximum of incident light
For a, minimum 0, i.e., it is parallel with normal F.Each lenticule 213 handles its sensitive refracting light incident, forms vertical incidence
The incident light of light sensitive diode photosurface.
Fig. 5 is that plan view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention one, and Fig. 6 is the present invention
The row pixel R linear arrays expansion plan view of pel array in embodiment one.It is illustrated so that each column includes 11 pixels as an example.
Due to according to the sensitivity angle to incident light, targetedly having selected lenticule, therefore, each pixel come
It says, sensitivity angle has mapping relations one by one, angle=f with Pixel addresses（index Pixel）.
As shown in figure 5, if the corresponding pixel values of maximum sensitivity angle a are p0, and minimum angle correspond to p0, p1,
P2 ... p10 are arranged in order, as shown in fig. 5, it is assumed that with a binary representation pixel value,.Similarly, as shown in fig. 6, p10,
P11, p12 ... p20 are arranged in order, wherein due to being shared in fig. 5 and fig. for 0, p10 according to normal angle.
To sum up, p0, p1, p2 ... p20 share 21 pixels, and so as to form 21 codes, entrance is can determine according to 21 codes
The angle information of the incident ray of lenticule.In the same way, the image pixel array of linear expansion includes how many couples of L, R, can
Export how many a angle informations, that is, its resolution sizes.
Fig. 7 is that sectional view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention two, and Fig. 8 is the present invention
The row pixel R linear arrays expansion sectional view of pel array in embodiment two.It is same to have unlike above-mentioned Fig. 3 and Fig. 4
The lenticule group of one sensitivity angle realizes that the i.e. n lenticules with same sensitivity angle are arranged in groups.
Fig. 9 is that plan view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention two, and Figure 10 is the present invention
The row pixel R linear arrays expansion plan view of pel array in embodiment two.The sensitivity angle of every group of pixel and Pixel addresses into
N is to 1 mapping relations, angle=f（indexpixel/n）.By taking Fig. 9 as an example, from left to right maximum enters sensitivity angle a and corresponds to n
Pixel：p0、p1、p2……pn-1；The minimum corresponding p in 0 degree of angle10n、p10n+1、p10n+2……p11n-1.Due to each corresponding sensitivity angle
Pixel have n, the reliability of single angle measurement is greatly improved.It should be with every group of n pixel when being encoded to output valve
For unit, sensitive angle each in this way corresponds to 2 system number of n positions, and entire row pixel L exports 21 such angle informations, i.e.,
Measurement accuracy is 21.By taking Figure 10 as an example, from right to left, p11n、p11n+1、p11n+2……p21n-2p21n-1, similarly, measurement accuracy is
21。
Figure 11 is that plan view is unfolded in the row pixel L linear arrays of pel array in the embodiment of the present invention three, and Figure 12 is this hair
The row pixel R linear arrays expansion plan view of pel array in bright embodiment three.Unlike embodiment one and embodiment two,
The pixel-expansion of same sensitivity angle is to m row n rows.If being considered with output valve, since the angle that the pixel used is surveyed all exists
On same plane, the angle of pel array output is still one-dimensional.
It is right in order to improve the certainty of the angle value uniquely exported by using several pixels in Figure 11 and Figure 12
The shared m rows pixel of same sensitivity angle is equal to pel array in embodiment two per a line, according to practical situations,
It should differentiate the size of m and n.Work as m<<During n, the meaning for repeating pixel column is to enhance the reliability of angle measurement, Figure 11 or figure
12 m*21 2 system numbers of n positions of output, but resolution ratio only has 1, i.e., and the angle number that may finally be judged on this spatial position is 1；
Work as m>>During n, the meaning for repeating pixel column is to enhance the resolution ratio of angle measurement, resolution ratio m.Due on pel array,
Pixel shown in Figure 11 and Figure 12 is still symmetrical, therefore, can be as close possible to the angle of incidence of light of half of circumference.
Figure 13 is the method flow diagram that incident light angle information is measured in the embodiment of the present invention four；As shown in figure 13, it wraps
It includes：
Step 1301 will be generally aligned in the same plane at left and right sides of the microlens layer normal and what incident angle was different enters
It penetrates light and carries out refraction processing respectively, form the incident light of sensor layer photosurface described in vertical incidence；
Step 1302 carries out the incident light that senses opto-electronic conversion and obtains electric signal output handling to peripheral circuit
Obtain pixel address；
Step 1303, according to the sensitivity angle of incident light in the microlens layer and the pixel address mapping relations, obtain
Obtain the angle of the incident light on microlens layer surface described in directive.
Preferably, step 1301 can specifically include:
Step 1311 will carry out refraction processing to being located at the different incident light of incident angle on the left of its normal, is formed and hung down
The incident light of photosurface on the left of the straight incident sensor layer；
The different incident light of incident angle on the right side of its normal is carried out refraction processing by step 1321, is formed vertical
The incident light of photosurface on the right side of the incident sensor layer.
In the above embodiment of the present invention, the GRIN microlens layers of refractive index gradient variation are selected.
Several preferred embodiments of the present invention have shown and described in above description, but as previously described, it should be understood that the present invention
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through in the scope of the invention is set forth herein
It is modified.And changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention, then it all should be in this hair
In the protection domain of bright appended claims.
Claims (9)
1. a kind of pel array of measurable incident light angle, which is characterized in that include successively from top to bottom：
Substrate is provided with sensor layer in the substrate, and the incident light for sensing carries out opto-electronic conversion；
Metal layer, for the electric signal transmission of opto-electronic conversion to be handled to peripheral circuit；
Microlens layer, for that will be located at, the microlens layer normal left and right sides will be generally aligned in the same plane and what incident angle was different enters
It penetrates light and carries out refraction processing respectively, the incident light of sensor layer photosurface described in vertical incidence is formed, with according to the lenticule
The sensitivity angle of incident light and corresponding pixel address mapping relations in layer obtain the incident light on microlens layer surface described in directive
Angle.
2. pel array according to claim 1, which is characterized in that the metal layer is arranged on the centre of silica material
In layer.
3. pel array according to claim 1, which is characterized in that the microlens layer includes left-hand microlens layer and the right side
To microlens layer, the left-hand microlens layer is used to reflect to being located at the different incident light of incident angle on the left of its normal
Processing forms the incident light of sensor layer photosurface described in vertical incidence, dextrad microlens layer, for being located on the right side of its normal
The different incident light of incident angle carry out refraction processing, form the incident light of sensor layer photosurface described in vertical incidence.
4. pel array according to claim 3, which is characterized in that each micro- in left-hand microlens layer and dextrad microlens layer
Lens are arranged according to the sensitivity angle size sequential of incident light.
5. pel array according to claim 4, which is characterized in that left-hand microlens layer and dextrad microlens layer include
The lenticule group being made of the identical multiple lenticules of the sensitivity angle size of incident light, according to the sensitivity angle size of incident light
Sequential arranges the lenticule group.
6. a kind of New Image sensor of measurable incident light angle information, which is characterized in that including in claim 1-5
Any pixel array.
A kind of 7. method for measuring incident light angle information, which is characterized in that including：
The incident light being generally aligned in the same plane at left and right sides of microlens layer normal and incident angle is different is reflected respectively
Processing forms the incident light of vertical incidence sensor layer photosurface；
Electric signal output is obtained to the incident light progress opto-electronic conversion sensed to be handled to obtain pixel address to peripheral circuit；
According to the sensitivity angle of incident light in the microlens layer and the pixel address mapping relations, obtain micro- described in directive
The angle of the incident light on mirror layer surface.
8. it is located at together the method according to the description of claim 7 is characterized in that will be located at left and right sides of the microlens layer normal
The one plane and different incident light of incident angle carries out refraction processing respectively, forms sensor layer photosurface described in vertical incidence
Incident light includes：
Refraction processing will be carried out to being located at the different incident light of incident angle on the left of its normal, form sensing described in vertical incidence
The incident light of photosurface on the left of device layer；
The different incident light of incident angle on the right side of its normal is subjected to refraction processing, forms sensor described in vertical incidence
The incident light of layer right side photosurface.
9. the method according to the description of claim 7 is characterized in that by identical multiple micro- of the sensitivity angle size of incident light
Microscope group into lenticule group, arrange the lenticule group according to the sensitivity angle size sequential of incident light, it is vertical to be formed
The incident light of the incident sensor layer photosurface.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1937236A (en) * | 2005-09-19 | 2007-03-28 | C.R.F.阿西安尼顾问公司 | Multifunctional optical sensor comprising a photodetectors matrix coupled to a microlenses matrix |
| CN103155544A (en) * | 2010-08-03 | 2013-06-12 | 康奈尔大学 | Angle sensitive pixel (ASP)-based image processing system, method, and applications |
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| WO2003014711A1 (en) * | 2001-08-07 | 2003-02-20 | Mitsubishi Chemical Corporation | Surface plasmon resonance sensor chip, and sample analysis method and analysis apparatus using the same |
| TWI288973B (en) * | 2005-09-27 | 2007-10-21 | Visera Technologies Co Ltd | Image sensing device and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1937236A (en) * | 2005-09-19 | 2007-03-28 | C.R.F.阿西安尼顾问公司 | Multifunctional optical sensor comprising a photodetectors matrix coupled to a microlenses matrix |
| CN103155544A (en) * | 2010-08-03 | 2013-06-12 | 康奈尔大学 | Angle sensitive pixel (ASP)-based image processing system, method, and applications |
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