CN103745828B - The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor - Google Patents
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor Download PDFInfo
- Publication number
- CN103745828B CN103745828B CN201310614219.6A CN201310614219A CN103745828B CN 103745828 B CN103745828 B CN 103745828B CN 201310614219 A CN201310614219 A CN 201310614219A CN 103745828 B CN103745828 B CN 103745828B
- Authority
- CN
- China
- Prior art keywords
- stage
- film
- electrode
- dielectric layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor, including wafer preparation phase;Specify the electrode layer on wafer and the lamination number of plies stage of dielectric layer;Wafer is formed the stage of initial insulating barrier；Initial insulating barrier is formed the stage of electrode layer；Electrode layer is formed the stage of dielectric layer；Electrode layer and dielectric layer implement the stage of lamination repeatedly；After lamination, electrode layer and the stage of dielectric layer heat treatment；The stage of protective layer is formed after heat treatment；After forming protective layer, chip back surface grinds the stage；Chip back surface cuts the stage with chip form after grinding；Chip after cutting forms the stage of outer electrode.The present invention forms nonproliferation film in the stage forming internal electrode, prevent internal electrode material to dielectric layer internal diffusion when external environment condition changes, additionally, the amorphization of dielectric layer, the lamination of interior electrode layer and dielectric layer does suitable heat treatment after completing, it is provided that the manufacture method of leakage current characteristic higher high-quality capacitor.
Description
Technical field
The present invention relates to the improved method of a kind of dry type multilayer ceramic capacitor, especially dry type laminated ceramic electricity
The ameliorative way of container leakage current characteristic.
Background technology
MLCC i.e. chip multilayer ceramic capacitor (Multi-layer ceramic capacitors) is as many
The capacitor that layer electroplating metal film manufactures, is the accessory of interim electric power storage.It is used primarily in TV, VCR, PC, automobile
Electronics, mobile communication, digital AV machine, in the electrical equipment such as computer, plays direct current (DC-blocking), shunting
And the effect such as exchange (By-passing).
Manufacture the mode of MLCC and be interior electrode layer and dielectric layer overlap lamination makes multiple capacitor connect structure side by side
Become.The method wherein forming electrode layer and dielectric layer is divided into two kinds.First, raw material uses aqueous raw material,
Utilize the wet method of the dielectric thin slice being printed on electrode pattern ceramic material.Second, utilize spattering of fine vacuum
The profits such as the photo engraving method of shooting method, chemical vapor evaporation coating method and use photomask (Photo mask)
Dry method by semiconductor technology mode.Wherein dry method uses accurate fine vacuum sputtering and chemistry gas
As evaporation coating technique, electrode layer and electricity can be realized in technology limitation compared with the wet method using aqueous raw material
The filming of interlayer and precise treatment, the granular of figure.But also some is not enough in material development widely.
More stubborn problem is, in order to improve the characteristic of condenser leakage current, those skilled in the art adopts
Take a lot of way, such as used aqueous raw material to form electricity Jie's film in wet method and be in addition to outside dusty material
Mix multiple a small amount of rare earth metal additive, but be all extremely difficult to outstanding solution leakage current effect.
Summary of the invention
The present invention is difficult in order to solve the leakage current characteristic of dry type multilayer ceramic capacitor present in prior art
With the problem improved.Propose the ameliorative way of a kind of dry type multilayer ceramic capacitor leakage current characteristic.
Technical scheme is as follows:
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor, comprises the following steps:
S1: wafer preparation phase+；
S2: specify the electrode layer on wafer and the lamination number of plies stage of dielectric layer；
S3: form the stage of initial insulating barrier on wafer；
S4: form the stage of electrode layer on initial insulating barrier；
S5: form the stage of dielectric layer on electrode layer；
S6: electrode layer and dielectric layer implement the stage of lamination repeatedly；
S7: after lamination, electrode layer and the stage of dielectric layer heat treatment；
S8: form the stage of protective layer after heat treatment；
S9: after forming protective layer, chip back surface grinds the stage；
S10: chip back surface cuts the stage with chip form after grinding；
S11: the chip after cutting forms the stage of outer electrode.
Further, described electrode layer be use fine vacuum sputter the method for film and obtain, its layer structure from
Under supreme be made up of bottom nonproliferation film, electrode film and top nonproliferation film stacking.
Further, described bottom nonproliferation film and the material of top nonproliferation film are titanium nitride or nitridation
Tantalum.
Further, described electrode film material is copper, silver or aluminum.
Further, described bottom nonproliferation film and the thickness of top nonproliferation film are electrode film thickness
Less than 20%.
Further, the edge nonproliferation film of electrode film seals completely.
Further, described dielectric layer is noncrystalline dielectric layer, and its material is aluminium oxide, titanium oxide or oxidation
Zirconium.
Further, the noncrystalline compound electric interlayer constituted for multiple oxide-film of described dielectric layer.
The present invention has the beneficial effect that:
First, use the nonproliferation film of electrode film when forming electrode layer, stop the electrode film that causes of leakage current from
Son penetrates into dielectric layer.Second, the diffusion of the metal ion retained in suppression electricity Jie's film when forming dielectric layer.
3rd, by residual in follow-up heat treatment clearing electrode film or electricity Jie's film when electrode layer or dielectric layer are formed
Organic compound or hydras etc. hinder the unnecessary composition of leakage current characteristic, finally can provide high-quality electric capacity
(MLCC) manufacture method of device.
In sum, the present invention utilizes fine vacuum sputtering technology and chemical vapor evaporation coating technique to form electrode layer and electricity
Interlayer, thus reach filming and precise treatment, by improving evaporation condition raising leakage current characteristic.Finally
Provide the MLCC manufacture method of a kind of high-quality under outside environmental change with relatively stiff stability.
Accompanying drawing explanation
The present invention has accompanying drawing 4 width.
Fig. 1 is present invention process schematic flow sheet；
Fig. 2 is the layer structure schematic diagram of electrode layer of the present invention；
Fig. 3 is the leakage current schematic diagram of dielectric layer of the present invention；
Fig. 4 is prior art (before improvement) and the present invention (after improvement) leakage current situation comparison diagram.
In the drawings, 1-wafer；2-PR；3-bottom nonproliferation film；4-electrode film；5-top nonproliferation film；
6-lower electrode layer；7-dielectric layer；8-top electrode layer.
Detailed description of the invention
As Figure 1-3, the ameliorative way of dry type multilayer ceramic capacitor leakage current characteristic, including following step
Rapid:
S1: wafer preparation phase；
S2: specify the electrode layer on wafer and the lamination number of plies stage of dielectric layer；
S3: form the stage of initial insulating barrier on wafer；
S4: form the stage of electrode layer on initial insulating barrier；
S5: form the stage of dielectric layer on electrode layer；
S6: electrode layer and dielectric layer implement the stage of lamination repeatedly；
S7: after lamination, electrode layer and the stage of dielectric layer heat treatment；
S8: form the stage of protective layer after heat treatment；
S9: after forming protective layer, chip back surface grinds the stage；
S10: chip back surface cuts the stage with chip form after grinding；
S11: the chip after cutting forms the stage of outer electrode.
Described electrode layer be use fine vacuum sputter the method for film and obtain, its layer structure from bottom to up by under
Portion's nonproliferation film, electrode film and top nonproliferation film stacking composition.Described bottom nonproliferation film
It is titanium nitride or tantalum nitride with the material of top nonproliferation film.Described electrode film material is copper, silver or aluminum.
Described bottom nonproliferation film and the thickness of top nonproliferation film are less than the 20% of electrode film thickness.Electricity
The edge nonproliferation film of pole film seals completely.Described dielectric layer is noncrystalline dielectric layer, and its material is
Aluminium oxide, titanium oxide or zirconium oxide.The noncrystalline compound electric constituted for multiple oxide-film of described dielectric layer
Interlayer.
Specification electrode and dielectric layer according to product need to specify in advance the number of plies of lamination when being repeatedly deposited with
(S2)。
In order to ensure insulation characterisitic between substrate and capacitor, in formation stages (S3) the institute shape of initial insulating barrier
The dielectric film become is oxide-film or nitride film, for guaranteeing the characteristic of insulation, uses at high temperature furnace high temperature deposition
During mode masking, film thickness is more than 500A, and when selecting chemical vapor evaporation masking, film thickness is 2000A
Above.
Electrode layer formation stages (S4) is carried out as follows: be coated with according to PR, exposure, the order of development
Carry out the lithographic images stage, then carry out electrode film evaporation on PR top, utilize wet examination solution to remove PR afterwards.
Described electrode film evaporation is the method utilizing fine vacuum sputter with bottom nonproliferation film, electrode film, on
The order of portion's nonproliferation film is carried out.The electrode film of the scattered reflection film within electrode layer is not only
End, lower end, even side also can be difficult to disconnect with dielectric layer.So must be at nonproliferation film and electrode film
Between reserve the distance (as shown in Figure 2) of stepcoverage (STEP-COVERAGE), afterwards by the edge of electrode film
Seal completely with nonproliferation film.For this electrode film evaporation chamber by structure first between substrate and sputter material
Lengthening distance, steaming degree condition is the minimal amount of argon amount required when producing plasma and electrical power electrode film
Step coverage rate is bad.And nonproliferation film chamber structure is tight according to the spacing of substrate and sputter material,
By the way of substrate rotates, strengthen spreadability, thus the electrode film in the middle of nonproliferation film can have been played
Full guard effect.The described preferred copper of electrode film material, silver or aluminum.Described bottom nonproliferation film and upper
The preferred titanium nitride of material of portion's nonproliferation film or tantalum nitride.Owing to resistance is high so the thickness of nonproliferation film
Within the 20% of electrode film can be limited in.
Dielectric layer formation stages (S5) is to utilize metal Organic Ingredients to be deposited with by chemical vapor or monatomic evaporation
Mode carry out, aluminium oxide, titanium oxide, zirconium oxide are preferably used.And electricity Jie's film is according to the specification of product
Difference can also be monolayer or the composite bed of multiple oxide-film composition.When using composite bed, in order to prevent
Impurity in various metal electron ion or film moves and makes thin film form crystallization, and it is the heaviest for setting evaporation condition
Want.In order to avoid thin film crystallization, mode the most alternately is used to be deposited with.At this moment, number of times according to
Follow-up heat treatment temperature is different and changes.Such as when using aluminium oxide and titanium oxide to do composite bed, follow-up work
Journey (referring to heat treatment) is 500 degree when, and the crystallized temperature of material is at 350 degree, and both differ from 150 degree,
When adjusting a cycle by 50 degree, need to circulate 4 times, i.e. according to titanium dioxide-aluminum oxide-titanium oxide-oxidation
The order of aluminum-titanium dioxide-aluminum oxide-titanium oxide evaporation by several times forms dielectric layer.
Hereafter, preselect number of times according to electrode layer and dielectric layer to be alternately deposited with and heat treatment.(S7)
Impurity within the electrode layer being deposited with due to heat treatment and dielectric layer, the organic compound i.e. remained or
Hydrates etc. need to remove, and are therefore carried out after evaporation completes.Temperature minimum 400 when heat treatment is carried out
More than degree, it is to determine according to the purified crystals characteristic of electrode film or electricity Jie's film.Such as, electrode film uses
Copper, in the case of electricity Jie's film uses titanium oxide, the internal oxidation condition of copper is in nitrogen state, although temperature
Degree is at 500 degree, but the condition of the internal junction crystallization of titanium oxide is 350 degree, so at a temperature of 500 degree
When carrying out heat treatment, titanium oxide can not use with monolayer, and uses composite bed.
Hereafter, layer protecting film is done in order to product is shielded outside it because of multiple external environment condition.(S8)
The follow-up chip back surface of this protecting film is ground, and cuts according to the form of chip, makes outer electrode plastic
The most broken and deformation under the conditions of degree warm in nature etc..Protecting film is carried out at chip back surface for product thickness after completing
Grind (S9). method and dry type with chip form cutting (S10) formation outer electrode (S11) are amassed afterwards
Layer ceramic capacitor manufacture method is identical.
Electrode pattern is to be obtained by photoresist etch cleaning mode [PR (Photo Resist) Lift-off].
Dielectric layer is in order to prevent the diffusion of the leakage current factor such as metal ion in electricity Jie's film, by adjusting evaporation condition
Method keep non-crystal state.
Carry out after completing lamination not depositing thing in heat treatment clearing electrode layer and dielectric layer.
Claims (7)
1. the leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor, comprises the following steps:
S1: wafer preparation phase；
S2: specify the electrode layer on wafer and the lamination number of plies stage of dielectric layer；
S3: form the stage of initial insulating barrier on wafer；
S4: form the stage of electrode layer on initial insulating barrier；
S5: form the stage of dielectric layer on electrode layer；
S6: electrode layer and dielectric layer implement the stage of lamination repeatedly；
S7: after lamination, electrode layer and the stage of dielectric layer heat treatment；
S8: form the stage of protective layer after heat treatment；
S9: after forming protective layer, chip back surface grinds the stage；
S10: chip back surface cuts the stage with chip form after grinding；
S11: the chip after cutting forms the stage of outer electrode；
Described electrode layer is to be spread by bottom nonproliferation film (3), electrode film (4) and top from bottom to up
Prevent film (5) stacking from forming；
Electrode film evaporation chamber is by structure first the lengthening distance between substrate and sputter material, and evaporation condition is to produce
Minimal amount of argon amount required during raw plasma and electrical power are in order to make electrode film step coverage rate
Bad, and nonproliferation film chamber structure is tight according to the spacing of substrate and sputter material, passes through substrate
The mode rotated strengthens spreadability, thus can play completely enclosed to the electrode film in the middle of nonproliferation film
Effect.
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor the most according to claim 1, it is special
Levy and be: when described electrode layer is formed, utilize the layer spreadability gap of nonproliferation film and electrode film, improve
Leakage current characteristic.
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor the most according to claim 2, it is special
Levy and be: the edge of electrode film (4) is sealed completely by nonproliferation film.
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor the most according to claim 1, it is special
Levy and be: described dielectric layer is the noncrystalline compound electric interlayer that multiple oxide-film is constituted.
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor the most according to claim 1, its
It is characterised by: it is means that employing makes the thin film in dielectric layer be formed without crystallization, improves leakage current characteristic.
6. according to the leakage current characteristic ameliorative way of the dry type multilayer ceramic capacitor described in claim 4 or 5,
It is characterized in that: when the composite membrane of dielectric layer is formed, electricity Jie's film evaporation is by the gap separately evaporation exceeding temperature.
The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor the most according to claim 6, its
It is characterised by: the described difference referring to heat treatment temperature and crystallized temperature when exceeding temperature spread.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310614219.6A CN103745828B (en) | 2013-11-25 | 2013-11-25 | The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310614219.6A CN103745828B (en) | 2013-11-25 | 2013-11-25 | The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103745828A CN103745828A (en) | 2014-04-23 |
| CN103745828B true CN103745828B (en) | 2016-09-28 |
Family
ID=50502841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310614219.6A Expired - Fee Related CN103745828B (en) | 2013-11-25 | 2013-11-25 | The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103745828B (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5745335A (en) * | 1996-06-27 | 1998-04-28 | Gennum Corporation | Multi-layer film capacitor structures and method |
| KR20100084677A (en) * | 2008-01-18 | 2010-07-27 | 도쿄엘렉트론가부시키가이샤 | Capacitor, semiconductor device, method for manufacturing the capacitor, and method for manufacturing the semiconductor device |
| JP2010258028A (en) * | 2009-04-21 | 2010-11-11 | Murata Mfg Co Ltd | Electronic component |
| CN102024564B (en) * | 2010-10-19 | 2012-05-09 | 青岛杨金电子科技有限公司 | Method for manufacturing laminated thin-film capacitor and product |
| KR101266002B1 (en) * | 2012-10-12 | 2013-05-22 | 김형태 | Fabrication method of multi-layer ceramics capacitor using dry process |
| CN103050278B (en) * | 2012-12-20 | 2016-07-06 | 广东风华高新科技股份有限公司 | Multilayer ceramic capacitor and preparation method thereof |
-
2013
- 2013-11-25 CN CN201310614219.6A patent/CN103745828B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN103745828A (en) | 2014-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5729707B2 (en) | Semiconductor device on substrate coated with diffusion barrier and method of forming the same | |
| TWI244660B (en) | High dielectric constant insulating film, thin-film capacitive element, thin-film multilayer capacitor, and method for manufacturing thin-film capacitive element | |
| JP4882457B2 (en) | Thin film capacitor and semiconductor device having the same | |
| US8861179B2 (en) | Capacitors having dielectric regions that include multiple metal oxide-comprising materials | |
| US9159551B2 (en) | Methods of forming capacitors | |
| CN102165542A (en) | Thin film MIM capacitors and manufacturing method therefor | |
| JP2013102157A (en) | Method for forming mimcap structure, and mimcap structure | |
| JP6101068B2 (en) | Metal-insulator-metal stack and manufacturing method thereof | |
| CN110400792B (en) | Dielectric film, semiconductor memory element having the same, and method of manufacturing the same | |
| CN113690050B (en) | Layered composite relaxation ferroelectric material capable of simultaneously improving energy storage density and energy storage efficiency and preparation method thereof | |
| TWI671771B (en) | Capacitor, capacitor manufacturing method and semiconductor device | |
| WO2000022658A1 (en) | Semiconductor device and method for manufacturing the same | |
| JP2017204630A (en) | Thin film capacitor and manufacturing method thereof | |
| US8993044B2 (en) | Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials | |
| CN1790569A (en) | Dielectric thin film, dielectric thin film device, and method of production thereof | |
| CN109637809B (en) | Ceramic energy storage capacitor and preparation method thereof | |
| TW459383B (en) | Semiconductor device and method of manufacturing same | |
| JP2007180398A (en) | Method for manufacturing capacitor | |
| Lu et al. | Well-grown low-defect MAPbI3–xClx films for perovskite solar cells with over 20% efficiency fabricated under controlled ambient humidity conditions | |
| KR101266002B1 (en) | Fabrication method of multi-layer ceramics capacitor using dry process | |
| CN103745828B (en) | The leakage current characteristic ameliorative way of dry type multilayer ceramic capacitor | |
| CN105990095A (en) | Mim capacitor and preparation method thereof | |
| TW202035333A (en) | Dielectric film and electronic component | |
| TW201711261A (en) | Method and apparatus for fabricating battery with mesa structures and battery comprising same | |
| US11443900B2 (en) | Thin film capacitor, and method of producing thin film capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160928 Termination date: 20171125 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |