CN103731140A - High-frequency voltage-controlled oscillator with low phase noise - Google Patents
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Abstract
The invention provides a high-frequency voltage-controlled oscillator with low phase noise, comprising: the circuit comprises a resonant circuit, a negative resistance circuit, a current source circuit and a buffer circuit; the current source circuit is used for generating current for the voltage-controlled oscillator to work; the resonance circuit is used for generating an oscillation signal; the negative resistance circuit generates a negative resistance to counteract a positive resistance generated by the resonant circuit; the buffer circuit is used for buffering the oscillation signal generated by the resonance circuit and then outputting the buffered oscillation signal so as to isolate the buffered oscillation signal from an external signal. The oscillation signal generated by the resonant circuit in the high-frequency voltage-controlled oscillator provided by the invention is output after being buffered by the buffer circuit, so that the interference of an external signal to the oscillation circuit can be avoided, and the noise is reduced. And the current source adopts a heterojunction bipolar transistor, and the heterojunction bipolar transistor has lower flicker noise, so that the phase noise of the whole voltage-controlled oscillator can be improved. Meanwhile, the reverse diode is adopted in the resonant circuit, so that the voltage-controlled oscillator has better phase noise performance.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of high frequency voltage controlled oscillator with low phase noise.
Background technology
Voltage controlled oscillator (VCO, voltage-controlled oscillator) refers to that output frequency and input control voltage have the oscillating circuit of corresponding relation.
Voltage controlled oscillator is one of very important basic circuit in integrated circuit, and the implementation of its circuit mainly contains two kinds, is respectively annular voltage controlled oscillator (Ring VCO) and voltage controlled oscillator (LC VCO).Voltage controlled oscillator is widely used in clock synchronous (Clock Synchronization) circuit in microprocessor; Frequency synthesizer (Frequency Synthesizer) in wireless communication transceiver; In clock recovery circuitry (CRC, Clock Recovery Circuit) in optical fiber communication and leggy sampling (Multi-phase Sampling) circuit.
Frequency of oscillation is one of major parameter of weighing voltage controlled oscillator performance.In most cases, the frequency of oscillation of voltage controlled oscillator is to be determined by the inductance in resonant circuit and electric capacity, but the parasitic capacitance of voltage controlled oscillator, the parasitic capacitance being particularly connected with resonant circuit is also to affect voltage controlled oscillator to obtain compared with the principal element of high oscillation frequency.
Referring to Fig. 1, the schematic diagram that this figure is voltage controlled oscillator of the prior art.
The resonant circuit of voltage controlled oscillator shown in Fig. 1 comprises: differential inductance L0, the first variable capacitance C1, the second variable capacitance C23, the 3rd capacitor C 3, the 4th capacitor C 4, the first resistance R 1, the second resistance R 2;
One end of described differential inductance L0 connects the negative output terminal of voltage controlled oscillator, and the other end connects the positive output end of voltage controlled oscillator;
One end of described the first variable capacitance C1 connects first node A, and the other end connects first and controls voltage ATUNE;
One end of described the second variable capacitance C2 connects Section Point B, and the other end connects described first and controls voltage ATUNE;
One end of described the first resistance R 1 connects described first node A, other end ground connection;
One end of described the second resistance R 2 connects described Section Point B, other end ground connection;
The two ends of described the 3rd capacitor C 3 connect respectively the negative output terminal of described first node A and voltage controlled oscillator, and the two ends of described the 4th capacitor C 4 connect respectively the positive output end of described Section Point B and voltage controlled oscillator.
From the above analysis, the oscillator signal that resonant circuit in voltage controlled oscillator of the prior art produces is directly exported, do not carry out any isolation with outer signals, extraneous signal easily produces and disturbs oscillating circuit like this, thereby increases the noise of this voltage controlled oscillator.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of high frequency voltage controlled oscillator with low phase noise, can improve the noiseproof feature of high frequency voltage controlled oscillator.。
The embodiment of the present invention provides a kind of high frequency voltage controlled oscillator with low phase noise, comprising: resonant circuit, negative resistance circuit, current source circuit and buffer circuit;
Described resonant circuit, for generation of the oscillator signal of voltage controlled oscillator, described resonant circuit is inductance and capacitance type resonant circuit, electric capacity wherein adopts backward diode;
Described negative resistance circuit, for generation of negative resistance, the just resistance producing to offset described resonant circuit;
Described current source circuit, for generation of the electric current of voltage controlled oscillator work; Described current source circuit comprises the 7th heterojunction bipolar transistor; The grounded emitter of described the 7th heterojunction bipolar transistor, the collector electrode of described the 7th heterojunction bipolar transistor connects first end and second end of negative resistance circuit; The base stage of described the 7th heterojunction bipolar transistor connects the 3rd and controls voltage;
Described buffer circuit, cushions rear output for the oscillator signal that described resonant circuit is produced, to isolate with outer signals.
Preferably, described resonant circuit comprises: differential inductance, the first backward diode, the second backward diode, the 3rd electric capacity, the 4th electric capacity, the first resistance, the second resistance;
One end of described differential inductance connects first node, and the other end connects Section Point; The tap of described differential inductance connects power supply;
First node described in the anodic bonding of described the first backward diode, negative electrode connects first and controls voltage, the anodic bonding Section Point of described the second backward diode, negative electrode connects described first and controls voltage;
The two ends of described the first resistance connect respectively described first node and ground; The two ends of described the second resistance connect respectively described Section Point and ground;
The two ends of described the 3rd electric capacity connect respectively described first node and the 3rd node, and the two ends of described the 4th electric capacity connect respectively described Section Point and the 4th node;
Described the 3rd node is the first-phase contact of described resonant circuit and described buffer circuit, output the first resonance signal; Described the 4th node is the second-phase contact of described resonant circuit and described buffer circuit, output the second resonance signal.
Preferably, described buffer circuit comprises: the 3rd bipolar transistor, the 4th bipolar transistor, the 5th bipolar transistor, the 6th bipolar transistor, the 7th electric capacity, the 8th electric capacity, the 5th resistance and the 6th resistance;
The base stage of described the 3rd bipolar transistor connects described the 3rd node, and collector electrode connects described power supply, and emitter connects the 5th node;
The base stage of described the 4th bipolar transistor connects described the 4th node, and collector electrode connects described power supply, and emitter connects described the 6th node;
One end of described the 7th electric capacity connects described the 5th node, and the other end connects the base stage of described the 5th bipolar transistor;
The collector electrode of described the 5th bipolar transistor connects described power supply, and emitter is by described the 5th grounding through resistance;
One end of described the 8th electric capacity connects described the 6th node, and the other end connects the base stage of described the 6th bipolar transistor;
The collector electrode of described the 6th bipolar transistor connects described power supply, and emitter is by described the 6th grounding through resistance;
The transmitting of described the 5th bipolar transistor is the first output of voltage controlled oscillator very, and the transmitting of described the 6th bipolar transistor is the second output of voltage controlled oscillator very;
Described the 3rd node is the first-phase contact of described resonant circuit and described buffer circuit; Described the 4th node is the second-phase contact of described resonant circuit and described buffer circuit;
Described the 5th node is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node is the second-phase contact of buffer circuit and negative resistance circuit.
Preferably, described negative resistance circuit comprises: the first bipolar transistor, the second bipolar transistor, the 5th electric capacity, the 6th electric capacity, the 3rd resistance, the 4th resistance and the 9th electric capacity;
The collector electrode of described the first bipolar transistor connects the 5th node, and emitter connects described current source circuit, and base stage connects second by described the 3rd resistance and controls voltage;
The collector electrode of described the second bipolar transistor connects the 6th node, and emitter connects described current source, and base stage connects described second by described the 4th resistance and controls voltage;
The two ends of described the 9th electric capacity connect respectively described second and control voltage and ground;
One end of described the 5th electric capacity connects described the 5th node, and the other end connects the base stage of described the second bipolar transistor;
One end of described the 6th electric capacity connects described the 6th node, and the other end connects the base stage of described the first bipolar transistor; Wherein,
Described the 5th node is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node is the second-phase contact of buffer circuit and negative resistance circuit.
Preferably, described the first backward diode and the second backward diode work in reverse operation district.
Preferably, the capacitance of described the 3rd electric capacity and the 4th electric capacity is than at least large ten times of the capacitances of described the first backward diode and the second backward diode.
Preferably, the first bipolar transistor and the second bipolar transistor work in forward service area.
Preferably, described the 7th heterojunction bipolar transistor works in forward service area.
Preferably, the 3rd bipolar transistor, the 4th bipolar transistor, the 5th bipolar transistor and the 6th bipolar transistor work in forward service area.
Preferably, described buffer circuit comprises: the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th electric capacity, the 8th electric capacity, the 5th resistance and the 6th resistance;
The grid of described the 3rd metal-oxide-semiconductor connects described the 3rd node, and drain electrode connects described power supply, and source electrode connects the 5th node;
The grid of described the 4th metal-oxide-semiconductor connects described the 4th node, and drain electrode connects described power supply, and source electrode connects described the 6th node;
One end of described the 7th electric capacity connects described the 5th node, and the other end connects the base stage of described the 5th bipolar transistor;
The drain electrode of described the 5th metal-oxide-semiconductor connects described power supply, and source electrode is by described the 5th grounding through resistance;
One end of described the 8th electric capacity connects described the 6th node, and the other end connects the base stage of described the 6th metal-oxide-semiconductor;
The drain electrode of described the 6th metal-oxide-semiconductor connects described power supply, and source electrode is by described the 6th grounding through resistance;
The source electrode of described the 5th metal-oxide-semiconductor is the first output of voltage controlled oscillator, the second output that the source electrode of described the 6th metal-oxide-semiconductor is voltage controlled oscillator;
Described the 3rd node is the first-phase contact of described resonant circuit and described buffer circuit; Described the 4th node is the second-phase contact of described resonant circuit and described buffer circuit;
Described the 5th node is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node is the second-phase contact of buffer circuit and negative resistance circuit.
Compared with prior art, the present invention has the following advantages:
In the high frequency voltage controlled oscillator with low phase noise provided by the invention, current source circuit is for generation of the electric current of voltage controlled oscillator work; Resonant circuit is for generation of oscillator signal; Negative resistance circuit produces negative resistance and offsets the just resistance that resonant circuit produces; Buffer circuit cushions rear output for the oscillator signal that resonant circuit is produced, to isolate with outer signals.The oscillator signal that resonant circuit in high frequency voltage controlled oscillator provided by the invention produces is just output after buffer circuit cushions, and can avoid like this outer signals that oscillating circuit is produced and disturbed, and reduces noise.And current source adopts heterojunction bipolar transistor, because heterojunction bipolar transistor has lower flicker noise, therefore, can improve the phase noise of whole voltage controlled oscillator.Meanwhile, in resonant circuit, adopt backward diode to make voltage controlled oscillator there is good phase noise performance.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of voltage controlled oscillator of the prior art;
Fig. 2 is embodiment mono-schematic diagram of the high frequency voltage controlled oscillator with low phase noise provided by the invention;
Fig. 3 is embodiment bis-circuit diagrams of the high frequency voltage controlled oscillator with low phase noise provided by the invention;
Fig. 4 is the embodiment three-circuit figure of the high frequency voltage controlled oscillator with low phase noise provided by the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Referring to Fig. 2, embodiment mono-schematic diagram of the high frequency voltage controlled oscillator with large tuning range provided by the invention.
The high frequency voltage controlled oscillator with large tuning range provided by the invention, comprising: resonant circuit 100, negative resistance circuit 200, current source circuit 300 and buffer circuit 400;
Described resonant circuit 100, for generation of the oscillator signal of voltage controlled oscillator, described resonant circuit 100 is inductance and capacitance type resonant circuit, electric capacity wherein adopts backward diode;
Described negative resistance circuit 200, for generation of negative resistance, the just resistance producing to offset described resonant circuit 100;
Described current source circuit 300, for generation of the electric current of voltage controlled oscillator work; Described current source circuit 300 comprises the 7th heterojunction bipolar transistor (HBT, Heterojunction Bipolar Transistor); The grounded emitter of described the 7th heterojunction bipolar transistor, the collector electrode of described the 7th heterojunction bipolar transistor connects negative resistance circuit 200; The base stage of described the 7th heterojunction bipolar transistor connects the 3rd and controls voltage;
Described buffer circuit 400, cushions rear output for the oscillator signal that described resonant circuit 100 is produced, to isolate with outer signals.
In the high frequency voltage controlled oscillator with large tuning range provided by the invention, current source circuit 300 is for generation of the electric current of voltage controlled oscillator work; Resonant circuit 100 is for generation of oscillator signal; Negative resistance circuit 200 produces negative resistance and offsets the just resistance that resonant circuit 100 produces; Buffer circuit 400 cushions rear output for the oscillator signal that resonant circuit is produced, to isolate with outer signals.The oscillator signal that resonant circuit 100 in high frequency voltage controlled oscillator provided by the invention produces is just output after buffer circuit 400 cushions, and can avoid like this outer signals that oscillating circuit is produced and disturbed.And current source circuit 300 adopts heterojunction bipolar transistor, because heterojunction bipolar transistor has lower flicker noise, therefore, can improve the phase noise of whole voltage controlled oscillator.Meanwhile, in resonant circuit, adopt backward diode to make voltage controlled oscillator there is good phase noise performance.
Referring to Fig. 3, this figure is embodiment bis-circuit diagrams with the high frequency voltage controlled oscillator of low phase noise.
Described current source circuit comprises that the collector electrode of the 7th heterojunction bipolar transistor Q7 connects described negative resistance circuit, is specially:
The collector electrode of described the 7th metal-oxide-semiconductor Q7 connects the emitter of described the second bipolar transistor Q2 and the emitter of the first bipolar transistor Q1.
The base stage of described the 7th metal-oxide-semiconductor Q7 connects the 3rd and controls voltage VBIAS.
By regulating the size of the 3rd control voltage VBIAS, guarantee that described the 7th heterojunction bipolar transistor Q7 works in forward region.
The flicker noise of current source is one of factor affecting phase noise of voltage controlled oscillator performance, and flicker noise comes from trap in active device and captures randomly and discharge charge carrier and produce.Because HBT does not belong to surface device, there is less trap, produce less flicker noise, therefore, Q7 can improve the phase noise performance of voltage controlled oscillator.
Described resonant circuit comprises: differential inductance L0, the first backward diode C1, the second backward diode C2, the 3rd capacitor C 3, the 4th capacitor C 4, the first resistance R 1, the second resistance R 2;
One end of described differential inductance L0 connects the 3rd node C, and the other end connects the 4th node D; The tap of described differential inductance L0 connects power supply;
The negative electrode of described the first backward diode C1 connects first and controls voltage ATUNE, the anodic bonding first node A of C1; The negative electrode of described the second backward diode C2 connects described first and controls voltage ATUNE, the anodic bonding Section Point B of C2;
Described the first backward diode C1 and the second backward diode C2 work in reverse operation district.
The capacitance of described the 3rd capacitor C 3 and the 4th capacitor C 4 is than at least large ten times of the capacitances of described the first backward diode C1 and the second backward diode C2.Can guarantee that like this this voltage controlled oscillator has wider frequency tuning range.
Can be by regulating the size of the first control voltage ATUNE to regulate the operating frequency of this voltage controlled oscillator.
The two ends of described the first resistance R 1 connect respectively described first node A and ground; The two ends of described the second resistance R 2 connect respectively described Section Point B and ground;
The two ends of described the 3rd capacitor C 3 connect respectively described first node A and the 3rd node C, and the two ends of described the 4th capacitor C 4 connect respectively described Section Point B and the 4th node D;
Described the 3rd node C is the first-phase contact of described resonant circuit and described buffer circuit, output the first resonance signal; Described the 4th node D is the second-phase contact of described resonant circuit and described buffer circuit, output the second resonance signal.
Described buffer circuit comprises: the 3rd bipolar transistor Q3, the 4th bipolar transistor Q4, the 5th bipolar transistor Q5, the 6th bipolar transistor Q6, the 7th capacitor C 7, the 8th capacitor C 8, the 5th resistance R 5 and the 6th resistance R 6;
The base stage of described the 3rd bipolar transistor Q3 connects described the 3rd node C, and collector electrode connects described power supply, and emitter connects the 5th node M;
The base stage of described the 4th bipolar transistor Q4 connects described the 4th node D, and collector electrode connects described power supply, and emitter connects described the 6th node N;
One end of described the 7th capacitor C 7 connects described the 5th node M, and the other end connects the base stage of described the 5th bipolar transistor Q5;
The collector electrode of described the 5th bipolar transistor Q5 connects described power supply, and emitter is by described the 5th resistance R 5 ground connection;
One end of described the 8th capacitor C 8 connects described the 6th node N, and the other end connects the base stage of described the 6th bipolar transistor Q6;
The collector electrode of described the 6th bipolar transistor Q6 connects described power supply, and emitter is by described the 6th resistance R 6 ground connection;
The transmitting of described the 5th bipolar transistor Q5 is the first output NOUT of voltage controlled oscillator very, and the transmitting of described the 6th bipolar transistor Q6 is the second output POUT of voltage controlled oscillator very;
Described the 3rd node C is the first-phase contact of described resonant circuit and described buffer circuit; Described the 4th node D is the second-phase contact of described resonant circuit and described buffer circuit;
Described the 5th node M is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node N is the second-phase contact of buffer circuit and negative resistance circuit.
The effect of described C7 and C8 is isolated DC signal, and AC signal is passed through.
Buffer circuit cushions rear output by the oscillator signal of resonant circuit output, makes the operating frequency of voltage controlled oscillator not be subject to the impact of outer signals.
Wherein, Q5 and R5 composition follower, Q6 and R6 composition follower.
The 3rd bipolar transistor Q3, the 4th bipolar transistor Q4, the 5th bipolar transistor Q5 and the 6th bipolar transistor Q6 work in forward service area.
In high frequency voltage controlled oscillator provided by the invention, described negative resistance circuit comprises: the first bipolar transistor Q1, the second bipolar transistor Q2, the 3rd resistance R 3, the 4th resistance R 4, the 9th capacitor C 9, the 5th capacitor C 5 and the 6th capacitor C 6;
The collector electrode of described the first bipolar transistor Q1 connects described the 5th node M, and emitter connects described current source circuit, and base stage connects the second control voltage CDC by described the 3rd resistance R 3;
The collector electrode of described the second bipolar transistor Q2 connects described the 6th node N, and emitter connects described current source, and base stage connects described second by described the 4th resistance R 4 and controls voltage CDC;
The two ends of described the 9th capacitor C 9 connect respectively described second and control voltage CDC and ground.
One end of described the 5th capacitor C 5 connects described the 5th node M, and the other end connects the base stage of described the second bipolar transistor Q2;
One end of described the 6th capacitor C 6 connects described the 6th node N, and the other end connects the base stage of described the first bipolar transistor Q1.
The transmitting of described the first bipolar transistor Q1 is the first end of negative resistance circuit very, and the transmitting of described the second bipolar transistor Q2 is the second end of negative resistance circuit very.
By regulating the size of the second control voltage CDC, guarantee that Q1 and Q2 are in forward service area.
It should be noted that, in high frequency voltage controlled oscillator provided by the invention, preferably, described the first bipolar transistor Q1 and the second bipolar transistor Q2 can be heterojunction bipolar transistor.
The capacitance of described the 5th capacitor C 5 and the 6th capacitor C 6 be a MOS capacitive reactance pipe C1 and the 2nd MOS capacitive reactance pipe C2 capacitance 1/10th.Can guarantee that like this voltage controlled oscillator has wider frequency tuning range.
The frequency of oscillation of voltage controlled oscillator can be expressed as:
Wherein, L is the inductance value of differential inductance L0; C
pfor resonant circuit equivalent parallel electric capacity.The equivalent parallel electric capacity of voltage controlled oscillator shown in Fig. 1 of prior art not only comprises electric capacity (C1, C2, C3, C4), and comprise the 5th capacitor C 5, the 6th capacitor C 6 that are connected with resonant circuit, and the base capacity of the first transistor Q1 and transistor seconds Q2.In sum, the voltage controlled oscillator shown in Fig. 1 has larger resonant circuit equivalent parallel electric capacity, because frequency of oscillation and equivalent parallel electric capacity are inversely proportional to.Therefore, this voltage controlled oscillator has lower frequency of oscillation.
In the high frequency voltage controlled oscillator with low phase noise provided by the invention, owing to being directly connected with differential inductance L0 the equivalent capacity that comprises electric capacity, the electric capacity of the second backward diode C2 and the base stage of the 3rd bipolar transistor Q3 and the 4th bipolar transistor Q4 of the 3rd capacitor C 3, the 4th capacitor C 4, the first backward diode C1 with the electric capacity indirectly connecting in resonant circuit; With respect to voltage controlled oscillator of the prior art, the equivalent parallel electric capacity of resonant circuit has reduced like this, by the known frequency of oscillation of formula (1) and equivalent parallel electric capacity, is inversely proportional to.Therefore, this voltage controlled oscillator has higher frequency of oscillation.And current source adopts heterojunction bipolar transistor, because heterojunction bipolar transistor has lower flicker noise, therefore, can improve the phase noise of whole voltage controlled oscillator.
It should be noted that, the starting condition for oscillation of voltage controlled oscillator can be expressed as:
g
mR
p≥2（2）
Wherein, g
mfor the equivalent transconductance of the negative resistance circuit in parallel with resonant circuit; R
pfor the equivalent resistance of resonant circuit parallel connection.Because HBT, under identical power consumption condition, has larger mutual conductance, therefore the negative resistance circuit in this voltage controlled oscillator adopts HBT(Q1, Q2) can make voltage controlled oscillator starting of oscillation rapidly.
It should be noted that, in resonant circuit, adopt backward diode (C1, C2).Owing to controlling backward diode, work in reverse operation district, the electric capacity of backward diode is with respect to MOS capacitive reactance pipe, and its value size is less with the variation of controlling voltage ATUNE, therefore has good phase noise.
Q3, Q4 and Q5, Q6 in buffer circuit in embodiment shown in Fig. 3 are realized by transistor, be understandable that, transistor sites in buffer circuit also can be realized by metal-oxide-semiconductor, as shown in Figure 4, and another embodiment that this figure is high frequency voltage controlled oscillator provided by the invention.The difference of Fig. 4 and Fig. 3 is to change respectively the Q3 in Fig. 3, Q4, Q5 and Q6 into M3, M4, M5 and M6.
Described buffer circuit comprises: the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th capacitor C 7, the 8th capacitor C 8, the 5th resistance R 5 and the 6th resistance R 6;
The grid of described the 3rd metal-oxide-semiconductor M3 connects described the 3rd node C, and drain electrode connects described power supply, and source electrode connects the 5th node M;
The grid of described the 4th metal-oxide-semiconductor M4 connects described the 4th node D, and drain electrode connects described power supply, and source electrode connects described the 6th node N;
One end of described the 7th capacitor C 7 connects described the 5th node M, and the other end connects the grid of described the 5th metal-oxide-semiconductor M5;
The drain electrode of described the 5th metal-oxide-semiconductor M5 connects described power supply, and source electrode is by described the 5th resistance R 5 ground connection;
One end of described the 8th capacitor C 8 connects described the 6th node N, and the other end connects the grid of described the 6th metal-oxide-semiconductor M6;
The drain electrode of described the 6th metal-oxide-semiconductor M6 connects described power supply, and source electrode is by described the 6th resistance R 6 ground connection;
The source electrode of described the 5th metal-oxide-semiconductor M5 is the first output NOUT of voltage controlled oscillator, the second output POUT that the source electrode of described the 6th metal-oxide-semiconductor M6 is voltage controlled oscillator;
Described the 3rd node C is the first-phase contact of described resonant circuit and described buffer circuit; Described the 4th node D is the second-phase contact of described resonant circuit and described buffer circuit;
Described the 5th node M is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node N is the second-phase contact of buffer circuit and negative resistance circuit.
The operation principle of Fig. 4 is identical with Fig. 3, does not repeat them here.
In sum, this voltage controlled oscillator, with respect to the voltage controlled oscillator of prior art, has improved frequency of oscillation, and starting of oscillation rapidly, has lower phase noise.The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Although the present invention discloses as above with preferred embodiment, but not in order to limit the present invention.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (10)
1. a high frequency voltage controlled oscillator with low phase noise, is characterized in that, comprising: resonant circuit, negative resistance circuit, current source circuit and buffer circuit;
Described resonant circuit, for generation of the oscillator signal of voltage controlled oscillator, described resonant circuit is inductance and capacitance type resonant circuit, electric capacity wherein adopts backward diode;
Described negative resistance circuit, for generation of negative resistance, the just resistance producing to offset described resonant circuit;
Described current source circuit, for generation of the electric current of voltage controlled oscillator work; Described current source circuit comprises the 7th heterojunction bipolar transistor; The grounded emitter of described the 7th heterojunction bipolar transistor, the collector electrode of described the 7th heterojunction bipolar transistor connects negative resistance circuit; The base stage of described the 7th heterojunction bipolar transistor connects the 3rd and controls voltage;
Described buffer circuit, cushions rear output for the oscillator signal that described resonant circuit is produced, to isolate with outer signals.
2. the high frequency voltage controlled oscillator with low phase noise according to claim 1, it is characterized in that, described resonant circuit comprises: differential inductance, the first backward diode, the second backward diode, the 3rd electric capacity, the 4th electric capacity, the first resistance, the second resistance;
One end of described differential inductance connects the 3rd node, and the other end connects the 4th node; The tap of described differential inductance connects power supply;
The anodic bonding first node of described the first backward diode, negative electrode connects first and controls voltage, the anodic bonding Section Point of described the second backward diode, negative electrode connects described first and controls voltage;
The two ends of described the first resistance connect respectively described first node and ground; The two ends of described the second resistance connect respectively described Section Point and ground;
The two ends of described the 3rd electric capacity connect respectively described first node and the 3rd node, and the two ends of described the 4th electric capacity connect respectively described Section Point and the 4th node;
Described the 3rd node is the first-phase contact of described resonant circuit and described buffer circuit, output the first resonance signal; Described the 4th node is the second-phase contact of described resonant circuit and described buffer circuit, output the second resonance signal.
3. the high frequency voltage controlled oscillator with low phase noise according to claim 1, it is characterized in that, described buffer circuit comprises: the 3rd bipolar transistor, the 4th bipolar transistor, the 5th bipolar transistor, the 6th bipolar transistor, the 7th electric capacity, the 8th electric capacity, the 5th resistance and the 6th resistance;
The base stage of described the 3rd bipolar transistor connects the 3rd node, and collector electrode connects described power supply, and emitter connects the 5th node;
The base stage of described the 4th bipolar transistor connects the 4th node, and collector electrode connects described power supply, and emitter connects the 6th node;
One end of described the 7th electric capacity connects described the 5th node, and the other end connects the base stage of described the 5th bipolar transistor;
The collector electrode of described the 5th bipolar transistor connects described power supply, and emitter is by described the 5th grounding through resistance;
One end of described the 8th electric capacity connects described the 6th node, and the other end connects the base stage of described the 6th bipolar transistor;
The collector electrode of described the 6th bipolar transistor connects described power supply, and emitter is by described the 6th grounding through resistance;
The transmitting of described the 5th bipolar transistor is the first output of voltage controlled oscillator very, and the transmitting of described the 6th bipolar transistor is the second output of voltage controlled oscillator very; Wherein,
Described the 3rd node is the first-phase contact of described resonant circuit and described buffer circuit; Described the 4th node is the second-phase contact of described resonant circuit and described buffer circuit;
Described the 5th node is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node is the second-phase contact of buffer circuit and negative resistance circuit.
4. the high frequency voltage controlled oscillator with low phase noise according to claim 1, it is characterized in that, described negative resistance circuit comprises: the first bipolar transistor, the second bipolar transistor, the 5th electric capacity, the 6th electric capacity, the 3rd resistance, the 4th resistance and the 9th electric capacity;
The collector electrode of described the first bipolar transistor connects the 5th node, and emitter connects described current source circuit, and base stage connects second by described the 3rd resistance and controls voltage;
The collector electrode of described the second bipolar transistor connects the 6th node, and emitter connects described current source, and base stage connects described second by described the 4th resistance and controls voltage;
The two ends of described the 9th electric capacity connect respectively described second and control voltage and ground;
One end of described the 5th electric capacity connects described the 5th node, and the other end connects the base stage of described the second bipolar transistor;
One end of described the 6th electric capacity connects described the 6th node, and the other end connects the base stage of described the first bipolar transistor; Wherein,
Described the 5th node is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node is the second-phase contact of buffer circuit and negative resistance circuit.
5. the high frequency voltage controlled oscillator with low phase noise according to claim 2, is characterized in that, described the first backward diode and the second backward diode work in reverse operation district.
6. the high frequency voltage controlled oscillator with low phase noise according to claim 2, is characterized in that, the capacitance of described the 3rd electric capacity and the 4th electric capacity is than at least large ten times of the capacitances of described the first backward diode and the second backward diode.
7. the high frequency voltage controlled oscillator with low phase noise according to claim 4, is characterized in that, the first bipolar transistor and the second bipolar transistor work in forward service area.
8. the high frequency voltage controlled oscillator with low phase noise according to claim 1, is characterized in that, described the 7th heterojunction bipolar transistor works in forward service area.
9. the high frequency voltage controlled oscillator with low phase noise according to claim 3, is characterized in that, the 3rd bipolar transistor, the 4th bipolar transistor, the 5th bipolar transistor and the 6th bipolar transistor work in forward service area.
10. the high frequency voltage controlled oscillator with low phase noise according to claim 1, it is characterized in that, described buffer circuit comprises: the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th electric capacity, the 8th electric capacity, the 5th resistance and the 6th resistance;
The grid of described the 3rd metal-oxide-semiconductor connects the 3rd node, and drain electrode connects described power supply, and source electrode connects the 5th node;
The grid of described the 4th metal-oxide-semiconductor connects the 4th node, and drain electrode connects described power supply, and source electrode connects described the 6th node;
One end of described the 7th electric capacity connects described the 5th node, and the other end connects the base stage of described the 5th bipolar transistor;
The drain electrode of described the 5th metal-oxide-semiconductor connects described power supply, and source electrode is by described the 5th grounding through resistance;
One end of described the 8th electric capacity connects described the 6th node, and the other end connects the base stage of described the 6th metal-oxide-semiconductor;
The drain electrode of described the 6th metal-oxide-semiconductor connects described power supply, and source electrode is by described the 6th grounding through resistance;
The source electrode of described the 5th metal-oxide-semiconductor is the first output of voltage controlled oscillator, the second output that the source electrode of described the 6th metal-oxide-semiconductor is voltage controlled oscillator;
Described the 3rd node is the first-phase contact of described resonant circuit and described buffer circuit; Described the 4th node is the second-phase contact of described resonant circuit and described buffer circuit;
Described the 5th node is the first-phase contact of buffer circuit and negative resistance circuit; Described the 6th node is the second-phase contact of buffer circuit and negative resistance circuit.
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