CN103731135B - A kind of discrete magnitude Acquisition Circuit with self-checking function - Google Patents

A kind of discrete magnitude Acquisition Circuit with self-checking function Download PDF

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CN103731135B
CN103731135B CN201310598259.6A CN201310598259A CN103731135B CN 103731135 B CN103731135 B CN 103731135B CN 201310598259 A CN201310598259 A CN 201310598259A CN 103731135 B CN103731135 B CN 103731135B
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CN103731135A (en
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王江峰
刘阳
何创新
李晓明
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Shanghai Aviation Electric Co Ltd
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Abstract

本发明公开一种具有自检测功能的离散量采集电路,主要由一分压电路单元A1、一比较电路单元A2、一基准电压输出电路单元A3、一基准电压控制电路单元A4和一保护电路单元A5组成。本发明的优点:电路结构简单,不仅能有效地采集离散信号,还具有电路自检功能,能够快速定位电路中出现的问题,具有较高的测试性、维修性。

The invention discloses a discrete quantity acquisition circuit with self-detection function, which mainly consists of a voltage dividing circuit unit A1, a comparison circuit unit A2, a reference voltage output circuit unit A3, a reference voltage control circuit unit A4 and a protection circuit unit A5 composition. The invention has the advantages of simple circuit structure, not only can effectively collect discrete signals, but also has a circuit self-check function, can quickly locate problems in the circuit, and has high testability and maintainability.

Description

一种具有自检测功能的离散量采集电路A Discrete Quantity Acquisition Circuit with Self-detection Function

技术领域technical field

本发明涉及一种离散量采集电路,尤其是涉及一种具有自检测功能的离散量采集电路。The invention relates to a discrete quantity acquisition circuit, in particular to a discrete quantity acquisition circuit with self-detection function.

背景技术Background technique

离散量采集主要实现低/开、高/开、地/高等离散信号的采集。现有采用离散量采集电路中采用反相器、比较器、光耦、离散量转数字量芯片等器件采集离散信号,仅实现离散量采集功能,其电路无自检功能。不能够对离散量采集电路中出现问题快速定位,测试性、维修性较低。Discrete acquisition mainly realizes the acquisition of discrete signals such as low/open, high/open, and ground/high. In the existing discrete acquisition circuit, devices such as inverters, comparators, optocouplers, and discrete-to-digital chips are used to acquire discrete signals. Only the discrete acquisition function is realized, and the circuit has no self-test function. It cannot quickly locate the problems in the discrete quantity acquisition circuit, and the testability and maintainability are low.

发明内容Contents of the invention

本发明的目的就是针对现有技术中的不足,提供一种具有自检测功能的离散量采集电路。The object of the present invention is to provide a discrete quantity acquisition circuit with a self-detection function aiming at the deficiencies in the prior art.

为了实现上述目的,本发明的技术方案是这样实现的:一种具有自检测功能的离散量采集电路,包括,In order to achieve the above object, the technical solution of the present invention is achieved as follows: a discrete quantity acquisition circuit with self-detection function, comprising,

一基准电压输出电路单元,其由一基准电压芯片U1、一第三电阻R3、一第四电阻R4、一第七电阻R7、一第一MOS管Q1和一第四MOS管Q4组成,该第七电阻R7第一端接第一电源VCC1,该第七电阻R7第二端分别接该基准电压芯片U1的阴极端和该第四MOS管Q4漏极,该第四MOS管Q4源级接该第四电阻R4第一端,该第四电阻R4第二端分别接该第三电阻R3第一端和该基准电压芯片U1的参考端,该第三电阻R3第二端接该第一MOS管Q1漏极,该第一MOS管Q1源极接地;A reference voltage output circuit unit, which is composed of a reference voltage chip U1, a third resistor R3, a fourth resistor R4, a seventh resistor R7, a first MOS transistor Q1, and a fourth MOS transistor Q4. The first terminal of the seven resistor R7 is connected to the first power supply VCC1, the second terminal of the seventh resistor R7 is respectively connected to the cathode terminal of the reference voltage chip U1 and the drain of the fourth MOS transistor Q4, and the source of the fourth MOS transistor Q4 is connected to the The first end of the fourth resistor R4, the second end of the fourth resistor R4 are respectively connected to the first end of the third resistor R3 and the reference end of the reference voltage chip U1, the second end of the third resistor R3 is connected to the first MOS transistor The drain of Q1, the source of the first MOS transistor Q1 is grounded;

一基准电压控制电路单元,其由一第一电阻R1、一第六电阻R6、一第二MOS管Q2和一第三MOS管Q3组成,该第一电阻R1第一端接第一电源VCC1,该第一电阻R1第二端分别接该第二MOS管Q2漏极和该第一MOS管Q1栅极,该第二MOS管Q2源极接地,该第二MOS管Q2栅极直接或通过一第二电阻R2接处理器CPU的第一I/O端,该第六电阻R6第一端接第一电源VCC1,该第六电阻R6第二端分别接第三MOS管Q3漏极和该第四MOS管Q4栅极,该第三MOS管Q3源极接地,该第三MOS管Q3栅极直接或通过一第五电阻R5接处理器CPU的第二I/O端;A reference voltage control circuit unit, which is composed of a first resistor R1, a sixth resistor R6, a second MOS transistor Q2 and a third MOS transistor Q3, the first terminal of the first resistor R1 is connected to the first power supply VCC1, The second end of the first resistor R1 is respectively connected to the drain of the second MOS transistor Q2 and the gate of the first MOS transistor Q1, the source of the second MOS transistor Q2 is grounded, and the gate of the second MOS transistor Q2 is connected directly or through a The second resistor R2 is connected to the first I/O terminal of the processor CPU, the first terminal of the sixth resistor R6 is connected to the first power supply VCC1, and the second terminal of the sixth resistor R6 is respectively connected to the drain of the third MOS transistor Q3 and the first terminal of the sixth resistor R6. The gates of four MOS transistors Q4, the source of the third MOS transistor Q3 are grounded, and the gates of the third MOS transistor Q3 are connected directly or through a fifth resistor R5 to the second I/O end of the processor CPU;

一比较电路单元,其由一比较器U2A和一第八电阻R8组成,该比较器U2A第一输入端接该第四MOS管Q4漏极,该比较器输出端分别接该第八电阻R8第一端和处理器CPU的第三I/O端,该第八电阻R8第二端接第二电源VCC2;A comparison circuit unit, which is composed of a comparator U2A and an eighth resistor R8, the first input terminal of the comparator U2A is connected to the drain of the fourth MOS transistor Q4, and the output terminal of the comparator is respectively connected to the eighth resistor R8. One end and the third I/O end of the processor CPU, the second end of the eighth resistor R8 is connected to the second power supply VCC2;

一分压电路单元,其由一第九电阻R9、一第十电阻R10和一第十一电阻R11组成,该第九电阻R9第一端接第一电源VCC1,该第十电阻R10第一端接一离散量输入信号端DISC_IN,该第十一电阻R11第一端接地,该第九电阻R9第二端、第十电阻R10第二端、第十一电阻R11第二端都接该比较器U2A第二输入端,以及,A voltage divider circuit unit, which is composed of a ninth resistor R9, a tenth resistor R10 and an eleventh resistor R11, the first end of the ninth resistor R9 is connected to the first power supply VCC1, the first end of the tenth resistor R10 Connect to a discrete input signal terminal DISC_IN, the first end of the eleventh resistor R11 is grounded, the second end of the ninth resistor R9, the second end of the tenth resistor R10, and the second end of the eleventh resistor R11 are all connected to the comparator U2A second input, and,

一保护电路单元,其由一第一稳压管D1和一第一电容C1组成,该第一稳压管D1和第一电容C1并联后一端与该比较器第二输入端连接,另一端接地。A protection circuit unit, which is composed of a first voltage regulator tube D1 and a first capacitor C1, the first voltage regulator tube D1 and the first capacitor C1 are connected in parallel, one end is connected to the second input end of the comparator, and the other end is grounded .

进一步地,该较器U2A选用LM139,基准电压芯片U1选用TL431,第一至四MOS管Q1~Q4均选用2N7002,第一、二、五、六、八电阻R1、R2、R5、R6、R8阻值均选用10kΩ,第四电阻R4阻值选用2kΩ,第三电阻R3阻值选用1.5kΩ,第七电阻R7阻值选用1k,第九至十一电阻R9、R10、R11阻值均选用39kΩ,第一电源VCC1为+15VDC,第二电源VCC2为+3.3VDC,第一稳压管D1选用BZV55-C15,第一电容C1容值为50V100nf。Furthermore, the comparator U2A uses LM139, the reference voltage chip U1 uses TL431, the first to fourth MOS tubes Q1~Q4 all use 2N7002, the first, second, fifth, sixth and eighth resistors R1, R2, R5, R6, R8 The resistance value of the fourth resistor R4 is 2kΩ, the third resistor R3 is 1.5kΩ, the seventh resistor R7 is 1k, and the ninth to eleventh resistors R9, R10, R11 are all 39kΩ , the first power supply VCC1 is +15VDC, the second power supply VCC2 is +3.3VDC, the first voltage regulator tube D1 is selected from BZV55-C15, and the capacity of the first capacitor C1 is 50V100nf.

与现有技术相比,本发明的优点:电路结构简单,不仅能有效地采集离散信号,还具有电路自检功能,能够快速定位电路中出现的问题,测试性、维修性较高,方便可靠。Compared with the prior art, the present invention has the following advantages: the circuit structure is simple, not only can effectively collect discrete signals, but also has a circuit self-inspection function, which can quickly locate problems in the circuit, has high testability and maintainability, and is convenient and reliable .

附图说明Description of drawings

图1是本发明的电路结构示意图。Fig. 1 is a schematic diagram of the circuit structure of the present invention.

具体实施方式Detailed ways

下面结合附图和实施例对本发明作详细说明。The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

请参见图1,图中所示的是一种具有自检测功能的离散量采集电路,主要由一分压电路单元A1、一比较电路单元A2、一基准电压输出电路单元A3、一基准电压控制电路单元A4和一保护电路单元A5组成。Please refer to Figure 1. What is shown in the figure is a discrete quantity acquisition circuit with self-detection function, which is mainly controlled by a voltage divider circuit unit A1, a comparison circuit unit A2, a reference voltage output circuit unit A3, and a reference voltage The circuit unit A4 is composed of a protection circuit unit A5.

该基准电压输出电路单元A3由一基准电压芯片U1、一第三电阻R3、一第四电阻R4、一第七电阻R7、一第一MOS管Q1和一第四MOS管Q4组成,该第七电阻R7第一端接第一电源VCC1,该第七电阻R7第二端分别接该基准电压芯片U1的阴极端和该第四MOS管Q4漏极,该第四MOS管Q4源级接该第四电阻R4第一端,该第四电阻R4第二端分别接该第三电阻R3第一端和该基准电压芯片U1的参考端,该第三电阻R3第二端接该第一MOS管Q1漏极,该第一MOS管Q1源极接地。The reference voltage output circuit unit A3 is composed of a reference voltage chip U1, a third resistor R3, a fourth resistor R4, a seventh resistor R7, a first MOS transistor Q1 and a fourth MOS transistor Q4. The first terminal of the resistor R7 is connected to the first power supply VCC1, the second terminal of the seventh resistor R7 is respectively connected to the cathode terminal of the reference voltage chip U1 and the drain of the fourth MOS transistor Q4, and the source of the fourth MOS transistor Q4 is connected to the fourth MOS transistor Q4. The first end of four resistors R4, the second end of the fourth resistor R4 are respectively connected to the first end of the third resistor R3 and the reference end of the reference voltage chip U1, the second end of the third resistor R3 is connected to the first MOS transistor Q1 The drain and the source of the first MOS transistor Q1 are grounded.

该基准电压控制电路单元A4由一第一电阻R1、一第六电阻R6、一第二MOS管Q2和一第三MOS管Q3组成,该第一电阻R1第一端接第一电源VCC1,该第一电阻R1第二端分别接该第二MOS管Q2漏极和该第一MOS管Q1栅极,该第二MOS管Q2源极接地,该第二MOS管Q2栅极通过一第二电阻R2接处理器CPU的第一I/O端,该第六电阻R6第一端接第一电源VCC1,该第六电阻R6第二端分别接第三MOS管Q3漏极和该第四MOS管Q4栅极,该第三MOS管Q3源极接地,该第三MOS管Q3栅极通过一第五电阻R5接处理器CPU的第二I/O端。The reference voltage control circuit unit A4 is composed of a first resistor R1, a sixth resistor R6, a second MOS transistor Q2 and a third MOS transistor Q3, the first terminal of the first resistor R1 is connected to the first power supply VCC1, the The second end of the first resistor R1 is respectively connected to the drain of the second MOS transistor Q2 and the gate of the first MOS transistor Q1, the source of the second MOS transistor Q2 is grounded, and the gate of the second MOS transistor Q2 passes through a second resistor R2 is connected to the first I/O end of the processor CPU, the first end of the sixth resistor R6 is connected to the first power supply VCC1, and the second end of the sixth resistor R6 is respectively connected to the drain of the third MOS transistor Q3 and the fourth MOS transistor The gate of Q4, the source of the third MOS transistor Q3 is grounded, and the gate of the third MOS transistor Q3 is connected to the second I/O terminal of the processor CPU through a fifth resistor R5.

该比较电路单元A2由一比较器U2A和一第八电阻R8组成,该比较器U2A正输入端接该第四MOS管Q4漏极,该比较器输出端分别接该第八电阻R8第一端和处理器CPU的第三I/O端,该第八电阻R8第二端接第二电源VCC2。The comparison circuit unit A2 is composed of a comparator U2A and an eighth resistor R8, the positive input terminal of the comparator U2A is connected to the drain of the fourth MOS transistor Q4, and the output terminal of the comparator is respectively connected to the first terminal of the eighth resistor R8 and the third I/O end of the processor CPU, the second end of the eighth resistor R8 is connected to the second power supply VCC2.

该分压电路单元A1由一第九电阻R9、一第十电阻R10和一第十一电阻R11组成,该第九电阻R9第一端接第一电源VCC1,该第十电阻R10第一端接一离散量输入信号端DISC_IN,该第十一电阻R11第一端接地,该第九电阻R9第二端、第十电阻R10第二端、第十一电阻R11第二端都接该比较器U2A第二输入端。The voltage dividing circuit unit A1 is composed of a ninth resistor R9, a tenth resistor R10 and an eleventh resistor R11, the first terminal of the ninth resistor R9 is connected to the first power supply VCC1, and the first terminal of the tenth resistor R10 is connected to A discrete input signal terminal DISC_IN, the first terminal of the eleventh resistor R11 is grounded, the second terminal of the ninth resistor R9, the second terminal of the tenth resistor R10, and the second terminal of the eleventh resistor R11 are all connected to the comparator U2A the second input.

该保护电路单元A5由一第一稳压管D1和一第一电容C1组成,该第一稳压管D1和第一电容C1并联后一端与该比较器U2A负输入端连接,另一端接地。The protection circuit unit A5 is composed of a first voltage regulator transistor D1 and a first capacitor C1, one end of the first voltage regulator transistor D1 and the first capacitor C1 are connected in parallel to the negative input end of the comparator U2A, and the other end is grounded.

其中,该较器U2A选用LM139,基准电压芯片U1选用TL431(基准电压为2.5V),第一至四MOS管Q1~Q4均选用2N7002,第一、二、五、六、八电阻R1、R2、R5、R6、R8阻值均选用10kΩ,第四电阻R4阻值选用2kΩ,第三电阻R3阻值选用1.5kΩ,第七电阻R7阻值选用1k,第九至十一电阻R9、R10、R11阻值均选用39kΩ,第一电源VCC1为+15VDC,第二电源VCC2为+3.3VDC,第一稳压管D1选用BZV55-C15,第一电容C1容值为50V100nf,上述电子部件都为市售产品。Among them, the comparator U2A uses LM139, the reference voltage chip U1 uses TL431 (the reference voltage is 2.5V), the first to fourth MOS tubes Q1~Q4 all use 2N7002, the first, second, fifth, sixth and eighth resistors R1, R2 , R5, R6, R8 are all selected 10kΩ, the fourth resistor R4 is 2kΩ, the third resistor R3 is 1.5kΩ, the seventh resistor R7 is 1k, the ninth to eleventh resistors R9, R10, The resistance value of R11 is 39kΩ, the first power supply VCC1 is +15VDC, the second power supply VCC2 is +3.3VDC, the first regulator tube D1 is BZV55-C15, the first capacitor C1 is 50V100nf, and the above electronic components are commercially available sell products.

当地/开信号为开路时,比较器U2A负输入端(4脚)电压为+7.5V,当处理器CPU的第一、二I/O端为低电平时,第二、三MOS管Q2、Q3关闭,第一、四MOS管Q1、Q4导通,比较器U2A正输入端(5脚)的基准电压Vref为(2/1.5+1)×2.5=5.83V,此时比较器U2A正输入端电压小于负输入端电压,其输出为低电平,处理器CPU的第三I/O端为低电平。When the local/open signal is open, the voltage of the negative input terminal (pin 4) of the comparator U2A is +7.5V. When the first and second I/O terminals of the processor CPU are at low level, the second and third MOS tubes Q2, Q3 is turned off, the first and fourth MOS transistors Q1 and Q4 are turned on, the reference voltage Vref of the positive input terminal (pin 5) of the comparator U2A is (2/1.5+1)×2.5=5.83V, at this time the positive input of the comparator U2A The terminal voltage is lower than the negative input terminal voltage, its output is low level, and the third I/O terminal of the processor CPU is low level.

当离散信号输入电压V1小于2.49V时,比较器U2A负输入端电压(15+V1)/3小于5.83V,此时比较器U2A输出为开路,经10k上拉3.3V后,第三I/O端为高电平,完成离散量数据采集。When the discrete signal input voltage V1 is less than 2.49V, the negative input terminal voltage (15+V1)/3 of the comparator U2A is less than 5.83V, at this time the output of the comparator U2A is open, after being pulled up to 3.3V by 10k, the third I/ The O terminal is high level, and the discrete data acquisition is completed.

需要自检时,将第一I/O端置高电平,第二MOS管Q2导通、第一MOS管Q1关闭,将第二I/O端置低电平,第三MOS管Q3关闭、第四MOS管Q4导通,输出基准电压Vref为2.5V,比较器U2A正输入端电压小于负输入端电压,输出为低电平,即第三I/O端为低电平。然后将第一、二I/O端置为高电平,第三MOS管Q3导通,第四MOS管Q4关闭;将第一I/O端置为低电平,第二MOS管Q2关闭,第一MOS管Q1导通,基准源输出基准电压Vref为15V,比较器正输入端电压大于负输入端电压,第三I/O端为高电平,实现离散量采集电路的自检功能。When self-test is required, set the first I/O terminal to high level, the second MOS transistor Q2 is turned on, the first MOS transistor Q1 is turned off, the second I/O terminal is set to low level, and the third MOS transistor Q3 is turned off . The fourth MOS transistor Q4 is turned on, the output reference voltage Vref is 2.5V, the voltage at the positive input terminal of the comparator U2A is lower than the voltage at the negative input terminal, and the output is at low level, that is, the third I/O terminal is at low level. Then set the first and second I/O terminals to high level, the third MOS transistor Q3 is turned on, and the fourth MOS transistor Q4 is turned off; the first I/O terminal is set to low level, and the second MOS transistor Q2 is turned off , the first MOS transistor Q1 is turned on, the reference source output reference voltage Vref is 15V, the voltage of the positive input terminal of the comparator is greater than the voltage of the negative input terminal, and the third I/O terminal is at high level, realizing the self-test function of the discrete quantity acquisition circuit .

电路中,第一稳压管D1防止信号端负尖峰电压对比较器U2A的影响,第一电容C1可滤除杂波和尖峰干扰。In the circuit, the first regulator tube D1 prevents the influence of the negative peak voltage of the signal terminal on the comparator U2A, and the first capacitor C1 can filter out clutter and peak interference.

此具有自检功能的离散信号采集电路同样适用于高/开离散信号采集,只需配置分压电路中电阻值,调节基准电压Vref的电压即可实现具有自检功能的高/开或地/高信号采集电路。This discrete signal acquisition circuit with self-testing function is also suitable for high/on discrete signal acquisition, just configure the resistance value in the voltage divider circuit and adjust the voltage of the reference voltage Vref to realize high/on or ground/ High signal acquisition circuit.

以上仅表达了本发明的实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above only expresses the embodiment of the present invention, and the description thereof is relatively specific and detailed, but it should not be construed as limiting the scope of the patent for the invention. It should be pointed out that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims.

Claims (3)

1. a kind of discrete magnitude Acquisition Circuit with self-checking function, which is characterized in that including,
One reference voltage output circuit unit, by a reference voltage chip U1, a 3rd resistor R3, one the 4th resistance R4, one 7th resistance R7, one first metal-oxide-semiconductor Q1 and one the 4th metal-oxide-semiconductor Q4 composition, the 7th resistance R7 first terminate the first power supply VCC1, 7th resistance R7 second end meets cathode terminal and the 4th metal-oxide-semiconductor Q4 drain electrode of reference voltage chip U1, the 4th MOS respectively Pipe Q4 source level connects the 4th resistance R4 first end, and the 4th resistance R4 second end connects 3rd resistor R3 first end and the base respectively The reference end of quasi- voltage chips U1,3rd resistor R3 second terminate the first metal-oxide-semiconductor Q1 drain electrode, the first metal-oxide-semiconductor Q1 source electrode Ground connection;
One reference voltage control circuit unit, by a first resistor R1, one the 6th resistance R6, one second metal-oxide-semiconductor Q2 and 1 Three metal-oxide-semiconductor Q3 composition, first resistor R1 first terminate the first power supply VCC1, first resistor R1 second end connect respectively this second Metal-oxide-semiconductor Q2 drain electrode and the first metal-oxide-semiconductor Q1 grid, the second metal-oxide-semiconductor Q2 source electrode ground connection, the second metal-oxide-semiconductor Q2 grid directly or Connect the first end I/O of processor CPU by a second resistance R2, the 6th resistance R6 first terminates the first power supply VCC1, this Six resistance R6 second ends connect third metal-oxide-semiconductor Q3 drain electrode and the 4th metal-oxide-semiconductor Q4 grid respectively, which is grounded, The third metal-oxide-semiconductor Q3 grid connects the 2nd end I/O of processor CPU directly or by one the 5th resistance R5;
One comparison circuit unit is made of a comparator U2A and one the 8th resistance R8, and comparator U2A first input end connects 4th metal-oxide-semiconductor Q4 drain electrode, the comparator output terminal connect the 8th resistance R8 first end and the 3rd I/O of processor CPU respectively End, the 8th resistance R8 second terminate second source VCC2;And
One bleeder circuit unit is made of, the 9th one the 9th resistance R9,1 the tenth resistance R10 and an eleventh resistor R11 The first power supply of termination of resistance R9 first VCC1, the tenth resistance R10 first terminate a discrete magnitude input signal end DISC_IN, should Eleventh resistor R11 first end ground connection, the 9th resistance R9 second end, the tenth resistance R10 second end, eleventh resistor R11 the Two ends all connect the comparator the second input terminal of U2A.
2. a kind of discrete magnitude Acquisition Circuit with self-checking function according to claim 1, which is characterized in that further include One protection circuit unit, is made of, the first voltage-stabiliser tube D1 and first capacitor one first voltage-stabiliser tube D1 and a first capacitor C1 One end is connect with second input terminal of comparator after C1 is in parallel, other end ground connection.
3. a kind of discrete magnitude Acquisition Circuit with self-checking function according to claim 1 or 2, which is characterized in that should Comparator U2A selects LM139, reference voltage chip U1 that TL431, first to fourth metal-oxide-semiconductor Q1~Q4 is selected to select 2N7002, the One, two, five, six, eight resistance R1, R2, R5, R6, R8 resistance values select 10k Ω, and the 4th resistance R4 resistance value selects 2k Ω, third electricity It hinders R3 resistance value and selects 1.5k Ω, the 7th resistance R7 resistance value selects 1k Ω, and the 9th to 11 resistance R9, R10, R11 resistance values are selected 39k Ω, the first power supply VCC1 are+15VDC, and second source VCC2 is+3.3VDC.
CN201310598259.6A 2013-11-25 2013-11-25 A kind of discrete magnitude Acquisition Circuit with self-checking function Expired - Fee Related CN103731135B (en)

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CN110542848B (en) * 2019-09-20 2021-07-20 天津津航计算技术研究所 Discrete magnitude acquisition power-on BIT self-detection circuit based on micro relay
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