CN103731135B - A kind of discrete magnitude Acquisition Circuit with self-checking function - Google Patents

A kind of discrete magnitude Acquisition Circuit with self-checking function Download PDF

Info

Publication number
CN103731135B
CN103731135B CN201310598259.6A CN201310598259A CN103731135B CN 103731135 B CN103731135 B CN 103731135B CN 201310598259 A CN201310598259 A CN 201310598259A CN 103731135 B CN103731135 B CN 103731135B
Authority
CN
China
Prior art keywords
resistance
semiconductor
oxide
metal
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310598259.6A
Other languages
Chinese (zh)
Other versions
CN103731135A (en
Inventor
王江峰
刘阳
何创新
李晓明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Aviation Electric Co Ltd
Original Assignee
Shanghai Aviation Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Aviation Electric Co Ltd filed Critical Shanghai Aviation Electric Co Ltd
Priority to CN201310598259.6A priority Critical patent/CN103731135B/en
Publication of CN103731135A publication Critical patent/CN103731135A/en
Application granted granted Critical
Publication of CN103731135B publication Critical patent/CN103731135B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

The present invention discloses a kind of discrete magnitude Acquisition Circuit with self-checking function, is mainly made of a bleeder circuit unit A1, a comparison circuit unit A2, a reference voltage output circuit unit A3, the protection of a reference voltage control circuit unit A4 and one circuit unit A5.Advantages of the present invention:Circuit structure is simple, can not only effectively acquire discrete signal, also have the function of circuitry self test, can quickly position the problem in circuit, testability with higher, maintainability.

Description

A kind of discrete magnitude Acquisition Circuit with self-checking function
Technical field
The present invention relates to a kind of discrete magnitude Acquisition Circuits, acquire more particularly, to a kind of discrete magnitude with self-checking function Circuit.
Background technique
Discrete magnitude acquisition mainly realize low/open, high/opens ,/acquisition of high discrete signal.It is existing to be adopted using discrete magnitude The devices such as digital quantity chip acquisition discrete signal is turned using phase inverter, comparator, optocoupler, discrete magnitude in collector, only realize from Amount acquisition function is dissipated, circuit is without self-checking function.The quick positioning that goes wrong in discrete magnitude Acquisition Circuit can not be tested Property, maintainability are lower.
Summary of the invention
The purpose of the present invention is to deficiency in the prior art, a kind of discrete magnitude with self-checking function is provided and is adopted Collector.
To achieve the goals above, the technical proposal of the invention is realized in this way:It is a kind of with self-checking function from Amount Acquisition Circuit is dissipated, including,
One reference voltage output circuit unit, by a reference voltage chip U1, a 3rd resistor R3, one the 4th resistance R4, one the 7th resistance R7, one first metal-oxide-semiconductor Q1 and one the 4th metal-oxide-semiconductor Q4 composition, the 7th resistance R7 first terminate the first power supply VCC1, the 7th resistance R7 second end connect cathode terminal and the 4th metal-oxide-semiconductor Q4 drain electrode of reference voltage chip U1 respectively, this Four metal-oxide-semiconductor Q4 source levels connect the 4th resistance R4 first end, and the 4th resistance R4 second end connects 3rd resistor R3 first end respectively With the reference end of reference voltage chip U1,3rd resistor R3 second terminates the first metal-oxide-semiconductor Q1 drain electrode, first metal-oxide-semiconductor Q1 source electrode ground connection;
One reference voltage control circuit unit, by a first resistor R1, one the 6th resistance R6, one second metal-oxide-semiconductor Q2 and One third metal-oxide-semiconductor Q3 composition, first resistor R1 first terminate the first power supply VCC1, and first resistor R1 second end connects this respectively Second metal-oxide-semiconductor Q2 drain electrode and the first metal-oxide-semiconductor Q1 grid, the second metal-oxide-semiconductor Q2 source electrode ground connection, the second metal-oxide-semiconductor Q2 grid are straight The first end I/O of processor CPU is connect or connects by a second resistance R2, the 6th resistance R6 first terminates the first power supply VCC1, 6th resistance R6 second end connects third metal-oxide-semiconductor Q3 drain electrode and the 4th metal-oxide-semiconductor Q4 grid, the third metal-oxide-semiconductor Q3 source electrode respectively Ground connection, the third metal-oxide-semiconductor Q3 grid connect the 2nd end I/O of processor CPU directly or by one the 5th resistance R5;
One comparison circuit unit is made of a comparator U2A and one the 8th resistance R8, and comparator U2A first is inputted The 4th metal-oxide-semiconductor Q4 drain electrode is terminated, which connects the third of the 8th resistance R8 first end and processor CPU respectively The end I/O, the 8th resistance R8 second terminate second source VCC2;
One bleeder circuit unit is made of one the 9th resistance R9,1 the tenth resistance R10 and an eleventh resistor R11, should 9th resistance R9 first terminates the first power supply VCC1, and the tenth resistance R10 first terminates a discrete magnitude input signal end DISC_ IN, eleventh resistor R11 first end ground connection, the 9th resistance R9 second end, the tenth resistance R10 second end, eleventh resistor R11 second end all connects the comparator the second input terminal of U2A, and,
One protection circuit unit, be made of one first voltage-stabiliser tube D1 and a first capacitor C1, the first voltage-stabiliser tube D1 and One end is connect with second input terminal of comparator after first capacitor C1 is in parallel, other end ground connection.
Further, should compared with device U2A select LM139, reference voltage chip U1 select TL431, first to fourth metal-oxide-semiconductor Q1~ Q4 selects 2N7002, and first and second, five, six, eight resistance R1, R2, R5, R6, R8 resistance values select 10k Ω, the 4th resistance R4 resistance Value selection 2k Ω, 3rd resistor R3 resistance value selection 1.5k Ω, the selection of the 7th resistance R7 resistance value 1k, the 9th to 11 resistance R9, It is+15VDC that R10, R11 resistance value, which select 39k Ω, the first power supply VCC1, and second source VCC2 is+3.3VDC, the first voltage-stabiliser tube D1 selects BZV55-C15, and first capacitor C1 capacitance is 50V100nf.
Compared with prior art, advantages of the present invention:Circuit structure is simple, can not only effectively acquire discrete signal, also Have the function of circuitry self test, can quickly position the problem in circuit, testability, maintainability are higher, convenient and reliable.
Detailed description of the invention
Fig. 1 is electrical block diagram of the invention.
Specific embodiment
It elaborates with reference to the accompanying drawings and examples to the present invention.
Referring to Figure 1, shown in figure is a kind of discrete magnitude Acquisition Circuit with self-checking function, mainly by a partial pressure Circuit unit A1, a comparison circuit unit A2, a reference voltage output circuit unit A3, a reference voltage control circuit unit A4 With a protection circuit unit A5 composition.
The reference voltage output circuit unit A3 by a reference voltage chip U1, a 3rd resistor R3, one the 4th resistance R4, One the 7th resistance R7, one first metal-oxide-semiconductor Q1 and one the 4th metal-oxide-semiconductor Q4 composition, the 7th resistance R7 first terminate the first power supply VCC1, the 7th resistance R7 second end connect cathode terminal and the 4th metal-oxide-semiconductor Q4 drain electrode of reference voltage chip U1 respectively, this Four metal-oxide-semiconductor Q4 source levels connect the 4th resistance R4 first end, and the 4th resistance R4 second end connects 3rd resistor R3 first end respectively With the reference end of reference voltage chip U1,3rd resistor R3 second terminates the first metal-oxide-semiconductor Q1 drain electrode, first metal-oxide-semiconductor Q1 source electrode ground connection.
The reference voltage control circuit unit A4 is by a first resistor R1, one the 6th resistance R6, one second metal-oxide-semiconductor Q2 and one Third metal-oxide-semiconductor Q3 composition, first resistor R1 first terminate the first power supply VCC1, first resistor R1 second end connect respectively this Two metal-oxide-semiconductor Q2 drain electrode and the first metal-oxide-semiconductor Q1 grid, the second metal-oxide-semiconductor Q2 source electrode ground connection, the second metal-oxide-semiconductor Q2 grid pass through One second resistance R2 connects the first end I/O of processor CPU, and the 6th resistance R6 first terminates the first power supply VCC1, the 6th electricity Resistance R6 second end connects third metal-oxide-semiconductor Q3 drain electrode and the 4th metal-oxide-semiconductor Q4 grid respectively, and third metal-oxide-semiconductor Q3 source electrode ground connection, this Three metal-oxide-semiconductor Q3 grids connect the 2nd end I/O of processor CPU by one the 5th resistance R5.
The comparison circuit unit A2 is made of a comparator U2A and one the 8th resistance R8, comparator U2A positive input termination 4th metal-oxide-semiconductor Q4 drain electrode, the comparator output terminal connect the 8th resistance R8 first end and the 3rd I/O of processor CPU respectively End, the 8th resistance R8 second terminate second source VCC2.
The bleeder circuit unit A1 is made of one the 9th resistance R9,1 the tenth resistance R10 and an eleventh resistor R11, should 9th resistance R9 first terminates the first power supply VCC1, and the tenth resistance R10 first terminates a discrete magnitude input signal end DISC_ IN, eleventh resistor R11 first end ground connection, the 9th resistance R9 second end, the tenth resistance R10 second end, eleventh resistor R11 second end all connects the comparator the second input terminal of U2A.
The protection circuit unit A5 is made of one first voltage-stabiliser tube D1 and a first capacitor C1, the first voltage-stabiliser tube D1 and One end is connect with comparator U2A negative input end after one capacitor C1 is in parallel, other end ground connection.
Wherein, LM139, reference voltage chip U1 should be selected to select TL431 compared with device U2A(Reference voltage is 2.5V), first 2N7002 is selected to four metal-oxide-semiconductor Q1~Q4, first and second, five, six, eight resistance R1, R2, R5, R6, R8 resistance values select 10k Ω, the 4th resistance R4 resistance value select 2k Ω, 3rd resistor R3 resistance value select 1.5k Ω, the 7th resistance R7 resistance value select 1k, the 9th 39k Ω is selected to 11 resistance R9, R10, R11 resistance values, the first power supply VCC1 is+15VDC, second source VCC2 is+ 3.3VDC, the first voltage-stabiliser tube D1 select BZV55-C15, and first capacitor C1 capacitance is 50V100nf, the city above-mentioned electronic component Dou Wei Sell product.
When locality/ON signal is open circuit, comparator U2A negative input end(4 feet)Voltage is+7.5V, when the of processor CPU One, when two ends I/O are low level, second and third metal-oxide-semiconductor Q2, Q3 are closed, and first, fourth metal-oxide-semiconductor Q1, Q4 conducting, comparator U2A is just Input terminal(5 feet)Reference voltage Vref be (2/1.5+1) × 2.5=5.83V, comparator U2A positive input terminal voltage is less than at this time Negative input end voltage, output are low level, and the 3rd end I/O of processor CPU is low level.
When discrete signal input voltage V1 is less than 2.49V, comparator U2A negative input end voltage (15+V1)/3 is less than 5.83V, comparator U2A output at this time is open circuit, and after 10k pulls up 3.3V, the 3rd end I/O is high level, completes measures of dispersion According to acquisition.
When needing self-test, high level is set at the first end I/O, the second metal-oxide-semiconductor Q2 conducting, the first metal-oxide-semiconductor Q1 are closed, by second The end I/O sets low level, and third metal-oxide-semiconductor Q3 is closed, the 4th metal-oxide-semiconductor Q4 is connected, and outputting reference voltage Vref is 2.5V, comparator U2A positive input terminal voltage is less than negative input end voltage, exports as low level, i.e. the 3rd end I/O is low level.Then by first, Two ends I/O are set to high level, third metal-oxide-semiconductor Q3 conducting, and the 4th metal-oxide-semiconductor Q4 is closed;First end I/O is set to low level, second Metal-oxide-semiconductor Q2 is closed, and the first metal-oxide-semiconductor Q1 conducting, a reference source outputting reference voltage Vref is 15V, and comparator positive input terminal voltage is big In negative input end voltage, the 3rd end I/O is high level, realizes the self-checking function of discrete magnitude Acquisition Circuit.
In circuit, the first voltage-stabiliser tube D1 prevents signal end undershoot voltage-contrast compared with the influence of device U2A, and first capacitor C1 can Filtering clutter and spike interference.
This discrete signal Acquisition Circuit with self-checking function be equally applicable to it is high/open discrete signal acquisition, only need to configure The height with self-checking function/open or ground/high RST can be realized in resistance value in bleeder circuit, the voltage for adjusting reference voltage Vref Acquisition Circuit.
Embodiments of the present invention are only expressed above, and the description thereof is more specific and detailed, but can not therefore understand For the limitation to patent of invention range.It should be pointed out that for those of ordinary skill in the art, not departing from this hair Under the premise of bright design, various modifications and improvements can be made, and these are all within the scope of protection of the present invention.Therefore, this hair The scope of protection shall be subject to the appended claims for bright patent.

Claims (3)

1. a kind of discrete magnitude Acquisition Circuit with self-checking function, which is characterized in that including,
One reference voltage output circuit unit, by a reference voltage chip U1, a 3rd resistor R3, one the 4th resistance R4, one 7th resistance R7, one first metal-oxide-semiconductor Q1 and one the 4th metal-oxide-semiconductor Q4 composition, the 7th resistance R7 first terminate the first power supply VCC1, 7th resistance R7 second end meets cathode terminal and the 4th metal-oxide-semiconductor Q4 drain electrode of reference voltage chip U1, the 4th MOS respectively Pipe Q4 source level connects the 4th resistance R4 first end, and the 4th resistance R4 second end connects 3rd resistor R3 first end and the base respectively The reference end of quasi- voltage chips U1,3rd resistor R3 second terminate the first metal-oxide-semiconductor Q1 drain electrode, the first metal-oxide-semiconductor Q1 source electrode Ground connection;
One reference voltage control circuit unit, by a first resistor R1, one the 6th resistance R6, one second metal-oxide-semiconductor Q2 and 1 Three metal-oxide-semiconductor Q3 composition, first resistor R1 first terminate the first power supply VCC1, first resistor R1 second end connect respectively this second Metal-oxide-semiconductor Q2 drain electrode and the first metal-oxide-semiconductor Q1 grid, the second metal-oxide-semiconductor Q2 source electrode ground connection, the second metal-oxide-semiconductor Q2 grid directly or Connect the first end I/O of processor CPU by a second resistance R2, the 6th resistance R6 first terminates the first power supply VCC1, this Six resistance R6 second ends connect third metal-oxide-semiconductor Q3 drain electrode and the 4th metal-oxide-semiconductor Q4 grid respectively, which is grounded, The third metal-oxide-semiconductor Q3 grid connects the 2nd end I/O of processor CPU directly or by one the 5th resistance R5;
One comparison circuit unit is made of a comparator U2A and one the 8th resistance R8, and comparator U2A first input end connects 4th metal-oxide-semiconductor Q4 drain electrode, the comparator output terminal connect the 8th resistance R8 first end and the 3rd I/O of processor CPU respectively End, the 8th resistance R8 second terminate second source VCC2;And
One bleeder circuit unit is made of, the 9th one the 9th resistance R9,1 the tenth resistance R10 and an eleventh resistor R11 The first power supply of termination of resistance R9 first VCC1, the tenth resistance R10 first terminate a discrete magnitude input signal end DISC_IN, should Eleventh resistor R11 first end ground connection, the 9th resistance R9 second end, the tenth resistance R10 second end, eleventh resistor R11 the Two ends all connect the comparator the second input terminal of U2A.
2. a kind of discrete magnitude Acquisition Circuit with self-checking function according to claim 1, which is characterized in that further include One protection circuit unit, is made of, the first voltage-stabiliser tube D1 and first capacitor one first voltage-stabiliser tube D1 and a first capacitor C1 One end is connect with second input terminal of comparator after C1 is in parallel, other end ground connection.
3. a kind of discrete magnitude Acquisition Circuit with self-checking function according to claim 1 or 2, which is characterized in that should Comparator U2A selects LM139, reference voltage chip U1 that TL431, first to fourth metal-oxide-semiconductor Q1~Q4 is selected to select 2N7002, the One, two, five, six, eight resistance R1, R2, R5, R6, R8 resistance values select 10k Ω, and the 4th resistance R4 resistance value selects 2k Ω, third electricity It hinders R3 resistance value and selects 1.5k Ω, the 7th resistance R7 resistance value selects 1k Ω, and the 9th to 11 resistance R9, R10, R11 resistance values are selected 39k Ω, the first power supply VCC1 are+15VDC, and second source VCC2 is+3.3VDC.
CN201310598259.6A 2013-11-25 2013-11-25 A kind of discrete magnitude Acquisition Circuit with self-checking function Active CN103731135B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310598259.6A CN103731135B (en) 2013-11-25 2013-11-25 A kind of discrete magnitude Acquisition Circuit with self-checking function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310598259.6A CN103731135B (en) 2013-11-25 2013-11-25 A kind of discrete magnitude Acquisition Circuit with self-checking function

Publications (2)

Publication Number Publication Date
CN103731135A CN103731135A (en) 2014-04-16
CN103731135B true CN103731135B (en) 2018-11-27

Family

ID=50455086

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310598259.6A Active CN103731135B (en) 2013-11-25 2013-11-25 A kind of discrete magnitude Acquisition Circuit with self-checking function

Country Status (1)

Country Link
CN (1) CN103731135B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110542848B (en) * 2019-09-20 2021-07-20 天津津航计算技术研究所 Discrete magnitude acquisition power-on BIT self-detection circuit based on micro relay
CN112098762B (en) * 2020-09-22 2024-08-16 陕西千山航空电子有限责任公司 Discrete switching value acquisition and detection circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101111103A (en) * 2007-08-08 2008-01-23 常州美欧电子有限公司 Digital microphone parameter measuring system
CN201315017Y (en) * 2008-12-12 2009-09-23 中国科学院沈阳自动化研究所 Data acquisition device
CN101750987A (en) * 2008-12-12 2010-06-23 中国科学院沈阳自动化研究所 Analog quantity and digital quantity data acquisition device and method
CN203645647U (en) * 2013-11-25 2014-06-11 上海航空电器有限公司 Discrete magnitude collection circuit with self-test function

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9406036B2 (en) * 2009-04-24 2016-08-02 Rockwell Automation Technologies, Inc. Discrete energy assignments for manufacturing specifications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101111103A (en) * 2007-08-08 2008-01-23 常州美欧电子有限公司 Digital microphone parameter measuring system
CN201315017Y (en) * 2008-12-12 2009-09-23 中国科学院沈阳自动化研究所 Data acquisition device
CN101750987A (en) * 2008-12-12 2010-06-23 中国科学院沈阳自动化研究所 Analog quantity and digital quantity data acquisition device and method
CN203645647U (en) * 2013-11-25 2014-06-11 上海航空电器有限公司 Discrete magnitude collection circuit with self-test function

Also Published As

Publication number Publication date
CN103731135A (en) 2014-04-16

Similar Documents

Publication Publication Date Title
CN103063979B (en) Load open-circuit detection circuit
CN203811727U (en) Device for detecting commercial power
CN103731135B (en) A kind of discrete magnitude Acquisition Circuit with self-checking function
CN205068033U (en) Detection control circuit of water level sensing device
CN203204062U (en) Comparator-based voltage signal detection circuit
CN200976023Y (en) CMOS battery voltage detecting circuit
CN203645647U (en) Discrete magnitude collection circuit with self-test function
CN203117295U (en) Resistance value detection circuit and device
CN110456141A (en) A kind of flash over-current detection circuit and its method
CN104034956A (en) Positive/negative voltage measuring circuit
CN203385803U (en) Novel super capacitor detection circuit
CN203688642U (en) Power failure detection circuit
CN210037952U (en) Detection circuit, chip and electronic equipment of load current direction
CN204287447U (en) A kind of alternating current-direct current input detecting circuit
CN203455403U (en) Battery voltage detection circuit based on Zener diode
CN204836131U (en) Effective switch input signal acquisition circuit of high level
CN204302445U (en) A kind of rectifying device testing arrangement reverse recovery time
CN204330872U (en) The load voltage testing circuit of current zero-crossing point testing circuit and correspondence
CN104596599B (en) Excitation high pressure automatic control device
CN103336204B (en) A kind of voltage type super capacitor detection circuit
CN103163358A (en) Fast and reliable alternative current power failure detection circuit
CN203929854U (en) Voltage magnitude testing circuit
CN209526657U (en) A kind of slope control circuit
CN204157132U (en) Load voltage testing circuit
CN208707546U (en) Constant current output control circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant