CN103730881B - A kind of power isolation circuit and method - Google Patents
A kind of power isolation circuit and method Download PDFInfo
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- CN103730881B CN103730881B CN201310754106.6A CN201310754106A CN103730881B CN 103730881 B CN103730881 B CN 103730881B CN 201310754106 A CN201310754106 A CN 201310754106A CN 103730881 B CN103730881 B CN 103730881B
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Abstract
The embodiment of the present invention provides a kind of power isolation circuit and method, relates to field of power supplies, it is possible to reduce the complexity of circuit, and the effective power supply isolating multiple-channel output under the abnormal conditions such as power source internal short circuit in circuit, provides reliably protecting to circuit.Its method is: if the unusual conditions such as power source internal short circuit occurs in circuit, when circuit builtin voltage is less than external voltage, the field effect transistor cut-off in this isolation circuit, thus blocks power supply and output bus.The embodiment of the present invention is for isolating power supply.
Description
Technical field
The present invention relates to field of power supplies, particularly relate to a kind of power isolation circuit and method.
Background technology
The way of outputs using multiple power module concurrent workings in current power-supply system more, for
Avoid affecting the normal of other modules of power-supply system due to one of them module output abnormality
Work, in circuit, many employings oring mosfet (or door field effect transistor) are to each power module
Isolate.
In prior art, use is isolated with comparator between power supply and output bus more, or
The circuit with other field effect transistor is used to isolate.
Stating in realization during isolating each power module, inventor finds prior art
In at least there are the following problems:
During using comparator to carry out isolated from power, its whole circuit needs the control used
Logic processed is relative complex, and comparator is easier to be interfered and the feelings by mistake overturn occur
Condition, and using with in the scheme of other relatively complicated circuits of field effect transistor, due to power supply
Different size, the feeder ear of the isolation circuit that each power supply is connected can not share, for multichannel
The power supply of output needs to increase extra winding, thus add circuit cost and transformator around
Difficulty processed.
Summary of the invention
Embodiments of the invention provide a kind of power isolation circuit and method, it is possible to reduce circuit
Complexity, and occur at circuit effectively isolating multichannel under the abnormal conditions such as power source internal short circuit
The power supply of output, provides reliably protecting to circuit.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
On the one hand, it is provided that a kind of power isolation circuit, including the first resistance, the second resistance, the
One diode, the second diode, a mirror current source and field effect transistor, it is characterised in that
Described first diode is connected with the source electrode of described field effect transistor, the second diode and described field
The drain electrode of effect pipe is connected；
Described first diode is connected with the first emitter stage of described mirror current source, and described
Two diodes are connected with the second emitter stage of described mirror current source；
Described first resistance is connected with the first colelctor electrode of described mirror current source, and described second
Resistance is connected with the second colelctor electrode of described mirror current source.
In conjunction with first aspect, in the implementation that the first is possible, described circuit also includes:
Field effect transistor described at least two is carried out in parallel to meet power requirement.
In conjunction with first aspect, in the implementation that the second is possible, described mirror current source bag
Include:
Described mirror current source is connected by the base stage of NPN type triode and constitutes；Or
Described mirror current source is connected by the base stage of PNP type triode and constitutes.
In conjunction with first aspect, in the implementation that the third is possible, described circuit is built in
In power module.
Second aspect, it is provided that a kind of isolated from power method, is applied to circuit described in first aspect,
The source electrode of the field effect transistor of described circuit is connected with power supply, and the drain electrode of described field effect transistor is with defeated
Going out bus to be connected, described method includes:
When builtin voltage is higher than external voltage, the first audion of described mirror current source is led
Logical, the second audion cut-off of described mirror current source, described field effect transistor turns on, described electricity
Electric current is exported on described output bus by source, and the source voltage of wherein said field effect transistor is interior
Portion's voltage, the drain voltage of described field effect transistor is external voltage；
When builtin voltage is less than external voltage, the first audion of described mirror current source cuts
Only, the second triode ON of described mirror current source, the cut-off of described field effect transistor, described electricity
Source disconnects with described output bus.
The embodiment of the present invention provides a kind of power isolation circuit and method, if power source internal occurs short
During the unusual conditions such as road, when circuit builtin voltage is less than external voltage, in this isolation circuit
Field effect transistor is ended, thus blocks power supply and output bus, and this circuit can reduce answering of circuit
Miscellaneous degree, and the effective power supply isolating multiple-channel output under the abnormal conditions such as short circuit are right
Circuit provides reliably protecting.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below by right
In embodiment or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that,
Accompanying drawing in describing below is only some embodiments of the present invention, for those of ordinary skill in the art
From the point of view of, on the premise of not paying creative work, it is also possible to obtain the attached of other according to these accompanying drawings
Figure.
A kind of power isolation circuit structural representation one that Fig. 1 provides for the embodiment of the present invention；
The schematic flow sheet of a kind of isolated from power method that Fig. 2 provides for the embodiment of the present invention；
A kind of power isolation circuit structural representation two that Fig. 3 provides for the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is entered
Row clearly and completely describes, it is clear that described embodiment is only a part of embodiment of the present invention,
Rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not having
Have and make the every other embodiment obtained under creative work premise, broadly fall into the present invention and protect
The scope protected.
The embodiment of the present invention provides a kind of power isolation circuit 01, as it is shown in figure 1, this circuit
01 includes first resistance the 011, second resistance the 012, first diode the 013, second diode
014, a mirror current source 015 and field effect transistor 016, it is characterised in that the one or two pole
Pipe 013 is connected with the source electrode of field effect transistor 016, the second diode 014 and field effect transistor
The drain electrode of 016 is connected；
First diode 013 is connected with the first emitter e 1 of mirror current source 015, the
Two diodes 014 are connected with the second emitter e 2 of mirror current source；
First resistance 011 is connected with the first colelctor electrode c1 of mirror current source 015, and second
Resistance 012 is connected with the second colelctor electrode c2 of mirror current source 015.
Wherein, as it is shown in figure 1, the diode in this circuit can be integrated two diode,
First diode 013 one end is connected with the source electrode of field effect transistor 016, and with the electricity in circuit
Source is connected, and the second diode 014 is connected with the drain electrode of field effect transistor 016, and with electricity
Output bus in road is connected；
Builtin voltage is can be described as with the voltage of the source electrode of the field effect transistor in circuit, and in circuit
The voltage of the drain electrode of field effect transistor can be referred to as external voltage；
Mirror current source in foregoing circuit can be connected by the base stage of two NPN type triode
Connect and constitute, or be connected by the base stage of two PNP type triode and constitute；
When, in the circuit at multiple power works, can suitably increase the parallel connection of above-mentioned field effect transistor
Number is to adapt to the power needs of multiple power supply concurrent working；
Foregoing circuit can be placed between power supply and output bus, it is also possible to foregoing circuit is built-in
Inside power module.
The embodiment of the present invention provides a kind of power isolation circuit, if power source internal appearance short circuit etc. are different
Often during situation, when circuit builtin voltage is less than external voltage, the field effect in this isolation circuit
Pipe ends, thus blocks power supply and output bus, and this circuit can reduce the complexity of circuit,
And under the abnormal conditions such as short circuit the effective power supply isolating multiple-channel output, circuit is provided
Reliably protecting.
The embodiment of the present invention provides a kind of isolated from power method, and the method is applied to the present invention and implements
A kind of power isolation circuit in Fig. 1 that example provides, as in figure 2 it is shown, the method includes:
S101, when builtin voltage higher than external voltage time, the first audion of mirror current source is led
Logical, the second audion cut-off of mirror current source, field effect transistor turns on, and electric current is exported by power supply
On output bus, wherein the source voltage of field effect transistor is builtin voltage, the leakage of field effect transistor
Pole tension is external voltage.
Exemplary, in circuit as shown in Figure 1, can be realized by the following method:
By comparing builtin voltage (the DC end of ORING MOSFET (Q1 field effect transistor)
Voltage) and external voltage (DC BUS terminal voltage) and mirror current source (Q2 image current
Source) in the height of base voltage of audion control opening or disconnecting of Q1；
Concrete, can be realized by following workflow:
As shown in Figure 1 in circuit, b1 end is identical with b2 end points position, when DC terminal voltage is more than
During DC BUS terminal voltage, e1 Yu the b1 end in Q2 will be switched on, the e2 in Q2 simultaneously
To be cut off with b2 end, now in figure, ORING_DR end is low level, and in figure
ORING_VCC end is high level, then in figure, Q1 will be switched on, thus power supply passes through DC
BUS rectifies often output to output bus.
S102, when builtin voltage less than external voltage time, the first audion of mirror current source cuts
Only, the second triode ON of mirror current source, field effect transistor cut-off, power supply and output bus
Disconnect.
Exemplary, circuit as shown in Figure 1, can be realized by below scheme:
When DC terminal voltage is less than DC BUS terminal voltage, e1 Yu the b1 end in Q2 will be by
Cut-off, e2 Yu the b2 end in Q2 will be switched on simultaneously, and now in figure, ORING_DR end is
High level, and in figure, ORING_VCC end is high level, then in figure, Q1 will be cut off, from
And the output of power supply is isolated with output bus.
Wherein, when power supply exists that output voltage is counter to be filled, such as in multiple power modules machine work
Under the conditions of work, there is internal short circuit fault in one of them power supply, causes inside and outside ORING MOS
Pressure reduction occurs.During high voltage output, anti-filling voltage is the highest.And the first diode and the two or two
Pole pipe can blocking voltage be counter fills, thus protects audion Q2, and therefore this circuit is not
It is appropriate only for low pressure output and is simultaneously applicable to high voltage output.
When Power Management Design is multiple-channel output, as it is shown on figure 3, such as there is 12V/5V two-way defeated
Go out, be respectively connected to above-mentioned isolation circuit can to each power supply, now drive due to this ORING
Galvanic electricity road is referenced to ground, and each isolation circuit is used in conjunction with an above-mentioned ORING_ simultaneously
VCC, it is to avoid the power supply of different size needs the control that the isolation circuit using different size brings
The problem that system is complicated, thus not only ensure that the reliable control of ORING_MOSFET but also decrease
The complexity of circuit.
It addition, when circuit needs high power requirement, the multiple above-mentioned field effects of use can be used
Pipe carries out parallel connection, thus meets the requirement of circuit more power.
The embodiment of the present invention provides a kind of isolated from power method, if power source internal appearance short circuit etc. are different
Often during situation, when circuit builtin voltage is less than external voltage, the field effect in this isolation circuit
Pipe ends, thus blocks power supply and output bus, and this circuit can reduce the complexity of circuit,
And under the abnormal conditions such as short circuit the effective power supply isolating multiple-channel output, circuit is provided
Reliably protecting.
Through the above description of the embodiments, those skilled in the art can be clearly
Solution arrives, and for convenience and simplicity of description, only carries out illustrating with the division of above-mentioned each functional module
Bright, in actual application, can as desired above-mentioned functions be distributed by different functional modules
Complete, the internal structure of device will be divided into different functional modules, to complete above description
All or part of function.The specific works process of the system of foregoing description, device and unit,
It is referred to the corresponding process in preceding method embodiment, does not repeats them here.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not
Be confined to this, any those familiar with the art in the technical scope that the invention discloses,
Change can be readily occurred in or replace, all should contain within protection scope of the present invention.Therefore, this
Bright protection domain should be as the criterion with described scope of the claims.
Claims (5)
1. a power isolation circuit, including the first resistance, the second resistance, the first diode,
Two diodes, a mirror current source and field effect transistor, it is characterised in that described first diode
Positive pole is connected with the source electrode of described field effect transistor, the positive pole of the second diode and described field effect transistor
Drain electrode is connected；
The negative pole of described first diode is connected with the first emitter stage of described mirror current source, described
The negative pole of the second diode is connected with the second emitter stage of described mirror current source；
Described first resistance is connected with the first colelctor electrode of described mirror current source, described second resistance
It is connected with the second colelctor electrode of described mirror current source.
Circuit the most according to claim 1, it is characterised in that described circuit also includes:
Field effect transistor described at least two is carried out in parallel to meet power requirement.
Circuit the most according to claim 1, it is characterised in that described mirror current source includes:
Described mirror current source is connected by the base stage of NPN type triode and constitutes；Or
Described mirror current source is connected by the base stage of PNP type triode and constitutes.
Circuit the most according to claim 1, it is characterised in that described circuit is built in power supply
In module.
5. an isolated from power method, it is characterised in that be applied to circuit described in claim 1,
The source electrode of the field effect transistor of described circuit is connected with power supply, and the drain electrode of described field effect transistor is total with output
Line is connected, and described method includes:
When builtin voltage is higher than external voltage, the first triode ON of described mirror current source, institute
Stating the second audion cut-off of mirror current source, described field effect transistor turns on, and described power supply is defeated by electric current
Going out on described output bus, the source voltage of wherein said field effect transistor is builtin voltage, described field
The drain voltage of effect pipe is external voltage；
When builtin voltage is less than external voltage, the first audion cut-off of described mirror current source, institute
Stating the second triode ON of mirror current source, described field effect transistor is ended, and described power supply is defeated with described
Go out bus to disconnect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310754106.6A CN103730881B (en) | 2013-12-31 | 2013-12-31 | A kind of power isolation circuit and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310754106.6A CN103730881B (en) | 2013-12-31 | 2013-12-31 | A kind of power isolation circuit and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103730881A CN103730881A (en) | 2014-04-16 |
| CN103730881B true CN103730881B (en) | 2016-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310754106.6A Active CN103730881B (en) | 2013-12-31 | 2013-12-31 | A kind of power isolation circuit and method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001309203A (en) * | 2000-04-24 | 2001-11-02 | New Japan Radio Co Ltd | Synchronizing separator circuit |
| CN101682261A (en) * | 2007-05-22 | 2010-03-24 | 松下电器产业株式会社 | Switching power supply device |
| CN102970800A (en) * | 2012-11-20 | 2013-03-13 | 顺德职业技术学院 | LED (Light Emitting Diode) driving circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120248864A1 (en) * | 2011-02-28 | 2012-10-04 | General Electric Company, A New York Corporation | System and Method for Operating Inverters |
-
2013
- 2013-12-31 CN CN201310754106.6A patent/CN103730881B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001309203A (en) * | 2000-04-24 | 2001-11-02 | New Japan Radio Co Ltd | Synchronizing separator circuit |
| CN101682261A (en) * | 2007-05-22 | 2010-03-24 | 松下电器产业株式会社 | Switching power supply device |
| CN102970800A (en) * | 2012-11-20 | 2013-03-13 | 顺德职业技术学院 | LED (Light Emitting Diode) driving circuit |
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| Publication number | Publication date |
|---|---|
| CN103730881A (en) | 2014-04-16 |
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Effective date of registration: 20211111 Address after: 518043 No. 01, 39th floor, building a, antuoshan headquarters building, No. 33, antuoshan Sixth Road, Xiang'an community, Xiangmihu street, Futian District, Shenzhen, Guangdong Province Patentee after: Huawei Digital Energy Technology Co., Ltd Address before: 518129 Huawei headquarters office building, Bantian, Longgang District, Shenzhen, Guangdong Patentee before: Huawei Technology Co., Ltd |