CN103715214A - Manufacture method of high-definition digital X-ray flat panel detector - Google Patents
Manufacture method of high-definition digital X-ray flat panel detector Download PDFInfo
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- CN103715214A CN103715214A CN201310627699.XA CN201310627699A CN103715214A CN 103715214 A CN103715214 A CN 103715214A CN 201310627699 A CN201310627699 A CN 201310627699A CN 103715214 A CN103715214 A CN 103715214A
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Abstract
The invention discloses a manufacture method of a high-definition digital X-ray flat panel detector. The concrete procedures comprise washing a substrate by using an ultrasonic method, and drying and storing the substrate; enabling a thin film transistor array to grow on the substrate; employing an amorphous selenium semi-conductor material to generate a thin film on the thin film transistor array in a vacuum vapor plating mode; laying an electronic sealed layer onto the amorphous selenium semi-conductor material; mounting an X-ray semiconductor onto the electronic sealed layer; laying an insulating layer onto the X-ray semiconductor; and mounting a motor layer onto the insulating layer. In this way, the manufacture method of the high-definition digital X-ray flat panel detector enables the thin film and the substrate to have a sufficient binding force. Thus, the image definition is higher.
Description
Technical field
The present invention relates to the manufacture method of flat panel detector, relate in particular to a kind of manufacture method of high definition digital X ray flat panel detector.
Background technology
In industry and medical industry, X ray detector is widely used, also more and more important as the requisite scintillator part of X ray detector.For some novel medical scintillators, very difficult while preparing monocrystalline, development polycrystalline ceramics scintillator is current most important research direction, and polycrystalline ceramics scintillator has that cost is low, good processability, being easy to carry out the advantages such as performance cutting, is the first-selection of current medical scintillator.
At new X X-ray diagnosis X, with in detector, people are are researching and developing the planar detector that adopts active matrix.In this planar detector, utilize flash layer that the X ray detecting is transformed to visible ray or fluorescence, by components of photo-electric conversion such as amorphous silicon photodiodes, this fluorescence conversion is become to signal charge again, and then signal charge is converted to digital signal and output image, yet often the adhesion of film and substrate is inadequate, and the definition of image is poor.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of manufacture method of high definition digital X ray flat panel detector.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of manufacture method of high definition digital X ray flat panel detector, and concrete steps comprise:
(1) substrate is cleaned and is dried preservation by ultrasonic method;
(2) being grown on substrate thin film transistor (TFT) array;
(3) by amorphous selenium semi-conducting material mode film former with vacuum evaporation above thin film transistor (TFT) array;
(4) electrons layer is routed on amorphous selenium semi-conducting material;
(5) X ray semiconductor is arranged on electrons layer;
(6) insulating barrier is laid on X ray semiconductor;
(7) motor layer is arranged on insulating barrier.
In a preferred embodiment of the present invention, the material of substrate described in step (1) is any one in glass, fibre faceplate and optical taper.
In a preferred embodiment of the present invention, described in step (3), the thickness of film is 0.4-0.6mm, and size is 40mm * 48mm.
The invention has the beneficial effects as follows: the manufacture method of a kind of high definition digital X ray of the present invention flat panel detector makes film and substrate have enough adhesions, and the definition of image is higher.
Embodiment
Below preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made to more explicit defining.
The embodiment of the present invention comprises: a kind of manufacture method of high definition digital X ray flat panel detector, and concrete steps comprise:
(1) substrate is cleaned and is dried preservation by ultrasonic method;
(2) being grown on substrate thin film transistor (TFT) array;
(3) by amorphous selenium semi-conducting material mode film former with vacuum evaporation above thin film transistor (TFT) array;
(4) electrons layer is routed on amorphous selenium semi-conducting material;
(5) X ray semiconductor is arranged on electrons layer;
(6) insulating barrier is laid on X ray semiconductor;
(7) motor layer is arranged on insulating barrier.
The material of substrate described in step (1) is any one in glass, fibre faceplate and optical taper.
Described in step (3), the thickness of film is 0.4-0.6mm, and size is 40mm * 48mm.
Below the operation principle of the manufacture method of a kind of high definition digital X ray flat panel detector of the present invention is described in detail.
Substrate is cleaned and is dried preservation by ultrasonic method, wherein the material of substrate is any one in glass, fibre faceplate and optical taper, by being grown on substrate of thin film transistor (TFT) array, amorphous selenium semi-conducting material be take to the mode of vacuum evaporation above thin film transistor (TFT) array and generate thickness as 0.4-0.6mm, size is 40mm * 48mm film, electrons layer is routed on amorphous selenium semi-conducting material, X ray semiconductor is arranged on electrons layer, insulating barrier is laid on X ray semiconductor, motor layer is arranged on insulating barrier.
Compared with prior art, the manufacture method of a kind of high definition digital X ray of the present invention flat panel detector makes film and substrate have enough adhesions, and the definition of image is higher.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes description of the present invention to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (3)
1. a manufacture method for high definition digital X ray flat panel detector, is characterized in that, concrete steps comprise:
(1) substrate is cleaned and is dried preservation by ultrasonic method;
(2) being grown on substrate thin film transistor (TFT) array;
(3) by amorphous selenium semi-conducting material mode film former with vacuum evaporation above thin film transistor (TFT) array;
(4) electrons layer is routed on amorphous selenium semi-conducting material;
(5) X ray semiconductor is arranged on electrons layer;
(6) insulating barrier is laid on X ray semiconductor;
(7) motor layer is arranged on insulating barrier.
2. the manufacture method of a kind of high definition digital X ray flat panel detector according to claim 1, is characterized in that: the material of substrate described in step (1) is any one in glass, fibre faceplate and optical taper.
3. the manufacture method of a kind of high definition digital X ray flat panel detector according to claim 1, is characterized in that: described in step (3), the thickness of film is 0.4-0.6mm, and size is 40mm * 48mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627699.XA CN103715214A (en) | 2013-12-02 | 2013-12-02 | Manufacture method of high-definition digital X-ray flat panel detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310627699.XA CN103715214A (en) | 2013-12-02 | 2013-12-02 | Manufacture method of high-definition digital X-ray flat panel detector |
Publications (1)
| Publication Number | Publication Date |
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| CN103715214A true CN103715214A (en) | 2014-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310627699.XA Pending CN103715214A (en) | 2013-12-02 | 2013-12-02 | Manufacture method of high-definition digital X-ray flat panel detector |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017004824A1 (en) * | 2015-07-09 | 2017-01-12 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor x-ray detector |
| US9915741B2 (en) | 2015-04-07 | 2018-03-13 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making semiconductor X-ray detectors |
| US10007007B2 (en) | 2015-09-08 | 2018-06-26 | Shenzhen Xpectvision Technology Co., Ltd. | Methods for making an X-ray detector |
| US10007009B2 (en) | 2015-04-07 | 2018-06-26 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor X-ray detector |
| US10061038B2 (en) | 2015-04-07 | 2018-08-28 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor X-ray detector |
| US10539691B2 (en) | 2015-06-10 | 2020-01-21 | Shenzhen Xpectvision Technology Co., Ltd. | Detector for X-ray fluorescence |
| US10705031B2 (en) | 2015-08-27 | 2020-07-07 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray imaging with a detector capable of resolving photon energy |
-
2013
- 2013-12-02 CN CN201310627699.XA patent/CN103715214A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9915741B2 (en) | 2015-04-07 | 2018-03-13 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making semiconductor X-ray detectors |
| US10007009B2 (en) | 2015-04-07 | 2018-06-26 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor X-ray detector |
| US10061038B2 (en) | 2015-04-07 | 2018-08-28 | Shenzhen Xpectvision Technology Co., Ltd. | Semiconductor X-ray detector |
| US10539691B2 (en) | 2015-06-10 | 2020-01-21 | Shenzhen Xpectvision Technology Co., Ltd. | Detector for X-ray fluorescence |
| WO2017004824A1 (en) * | 2015-07-09 | 2017-01-12 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor x-ray detector |
| CN107710021A (en) * | 2015-07-09 | 2018-02-16 | 深圳帧观德芯科技有限公司 | The method for making Semiconductor X-Ray detector |
| US10056425B2 (en) | 2015-07-09 | 2018-08-21 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor X-ray detector |
| CN107710021B (en) * | 2015-07-09 | 2019-09-27 | 深圳帧观德芯科技有限公司 | The method for making Semiconductor X-Ray detector |
| US10705031B2 (en) | 2015-08-27 | 2020-07-07 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray imaging with a detector capable of resolving photon energy |
| US10007007B2 (en) | 2015-09-08 | 2018-06-26 | Shenzhen Xpectvision Technology Co., Ltd. | Methods for making an X-ray detector |
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Application publication date: 20140409 |