WO2020173170A1

WO2020173170A1 - Flat panel detector and manufacture method therefor

Info

Publication number: WO2020173170A1
Application number: PCT/CN2019/124039
Authority: WO
Inventors: 侯学成; 林家强; 车春城
Original assignee: 京东方科技集团股份有限公司; 北京京东方光电科技有限公司
Priority date: 2019-02-26
Filing date: 2019-12-09
Publication date: 2020-09-03
Also published as: US11309451B2; US20210202779A1; CN109727968A

Abstract

Disclosed are a flat panel detector and a manufacture method therefor. The flat panel detector (100) comprises a first substrate (111) and a second substrate (121). The first substrate (111) includes a driving circuit (112), the second substrate (121) includes a photosensitive element (122). The first substrate (111) and the second substrate (121) are disposed oppositely to form a box-to-box structure. The driving circuit (112) is electrically connected with the photosensitive element (122) so as to drive the photosensitive element (122). The flat panel detector (100) can not only increase the filling rate of a photodiode in a pixel unit to expand the photosensitive area of the pixel unit in the flat panel detector (100), but also effectively prevent static electricity and scratches generated during use to improve the photoelectric characteristics and yield of the flat panel detector (100).

Description

Flat panel detector and manufacturing method

This application claims the priority of the Chinese patent application No. 201910142582.X filed on February 26, 2019, and the content disclosed in the above Chinese patent application is quoted here in full as a part of this application.

Technical field

The embodiment of the present disclosure relates to a flat panel detector and a manufacturing method.

Background technique

In recent years, X-ray inspection has been widely used in various fields such as medical treatment, safety, non-destructive testing and scientific research. At present, the more common X-ray detection technology is the digital radiography (DR) detection technology that appeared in the late 1990s. Flat Panel Detector (FPD) is used in X-ray digital photography detection technology, and its pixel size can be less than 0.1mm, so its image quality and resolution are almost comparable to film photography systems, and it also overcomes film photography. The shortcomings in the system also provide convenience for computer processing of images.

Summary of the invention

At least one embodiment of the present disclosure provides a flat panel detector including a first substrate and a second substrate. The first substrate includes a driving circuit, the second substrate includes a photosensitive element, the first substrate and the second substrate are arranged opposite to the box, and the driving circuit is electrically connected to the photosensitive element for alignment. The photosensitive element is driven.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the first substrate further includes a conductive connection portion. The conductive connecting portion is electrically connected to the driving circuit, is disposed on the surface of the first substrate, and is electrically connected to the photosensitive element.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the conductive connection part includes a metal electrode, a conductive glue or a conductive spacer.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the first substrate further includes a first passivation layer. The first passivation layer is disposed between the conductive connection portion and the driving circuit, the first passivation layer includes an opening area, and the conductive connection portion is disposed in the opening area.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the first passivation layer is a planarization layer, so that the first substrate has a substantially flat surface.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the second substrate further includes a substrate and a transparent electrode layer formed on the substrate, and the photosensitive element is disposed on the transparent electrode layer away from the transparent electrode layer. On one side of the substrate and electrically connected to the transparent electrode.

For example, the flat panel detector provided in an embodiment of the present disclosure further includes conductive glue. The conductive glue is arranged between the first substrate and the second substrate to bond the two to the box.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the driving circuit and the photosensitive element at least partially overlap in a direction in which the first substrate and the second substrate are directly opposite to each other.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the first substrate further includes a light shielding layer. The light shielding layer is disposed on a side of the driving circuit away from the first substrate, so as to be closer to the second substrate than the driving circuit.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the first substrate includes a first substrate, the second substrate includes a second substrate, and the first substrate and the second substrate For glass or plastic.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the photosensitive element includes a photodiode, and the photodiode is a PIN-type photodiode or a PN-type photodiode.

For example, in the flat panel detector provided by an embodiment of the present disclosure, the P-type layer, the I-type layer, and the N-type layer of the PIN-type photodiode are sequentially arranged in a direction opposite to the second substrate and the first substrate. Cascading settings.

For example, the flat panel detector provided by an embodiment of the present disclosure further includes a scanning circuit. The scanning circuit is connected to the driving circuit and is configured to provide a scanning signal to control the driving circuit.

For example, the flat panel detector provided by an embodiment of the present disclosure further includes a voltage reading circuit. The voltage reading circuit is connected to the driving circuit and is configured to read the voltage signal generated by the photosensitive element through the driving circuit.

At least one embodiment of the present disclosure further provides a method for manufacturing a flat panel detector, including: forming a first substrate including a driving circuit; forming a second substrate including a photosensitive element; and opposing the first substrate and the second substrate It is arranged to align the box so that the driving circuit and the photosensitive element are electrically connected.

For example, the manufacturing method provided by an embodiment of the present disclosure further includes: forming a first passivation layer including an opening area on the driving circuit; and forming a conductive connection portion in the opening area to connect the driving circuit and The photosensitive element.

For example, the manufacturing method provided by an embodiment of the present disclosure further includes: disposing a light shielding layer on a side of the driving circuit away from the first substrate, and disposing the first substrate and the second substrate opposite to each other. After the box is aligned, the light shielding layer is made closer to the second substrate relative to the driving circuit.

For example, in the manufacturing method provided by an embodiment of the present disclosure, forming the second substrate including the photosensitive element includes: forming a transparent electrode layer on the substrate of the second substrate, and then forming the transparent electrode layer away from the The photosensitive element is formed on one side of the second substrate.

For example, the manufacturing method provided in an embodiment of the present disclosure further includes: providing conductive glue between the first substrate and the second substrate to bond the two to the box.

Description of the drawings

In order to explain the technical solutions of the embodiments of the present disclosure more clearly, the following will briefly introduce the drawings of the embodiments. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limit the present disclosure. .

Figure 1A is a schematic circuit diagram of a flat panel detector;

Figure 1B is a schematic diagram of the structure of a flat panel detector;

2 is a schematic structural diagram of a flat panel detector provided by some embodiments of the disclosure;

3 is a schematic structural diagram of another flat panel detector provided by some embodiments of the disclosure;

4 is a schematic diagram of the structure of the first substrate in the flat panel detector provided by some embodiments of the disclosure;

5 is a schematic diagram of the structure of the second substrate in the flat panel detector provided by some embodiments of the disclosure; and

FIG. 6 is a flowchart of a method for manufacturing a flat panel detector according to some embodiments of the present disclosure.

detailed description

In order to make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative labor are within the protection scope of the present disclosure.

Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the usual meanings understood by those with ordinary skills in the field to which this disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity, or importance, but are only used to distinguish different components. Similarly, similar words such as "a", "one" or "the" do not mean quantity limitation, but mean that there is at least one. "Include" or "include" and other similar words mean that the element or item appearing before the word encompasses the element or item listed after the word and its equivalents, but does not exclude other elements or items. Similar words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", etc. are only used to indicate the relative position relationship. When the absolute position of the described object changes, the relative position relationship may also change accordingly.

The present disclosure will be described below through several specific embodiments. In order to keep the following description of the embodiments of the present disclosure clear and concise, detailed descriptions of known functions and known components may be omitted. When any component of an embodiment of the present disclosure appears in more than one drawing, the component is represented by the same reference number in each drawing.

According to the different photoelectron conversion modes involved in imaging, digital X-ray flat-panel detectors can be divided into two types: direct conversion (Direct DR) and indirect conversion (Indirect DR). Figure 1A shows a schematic circuit diagram of an indirect conversion flat panel detector. As shown in FIG. 1A, the indirect conversion type X-ray flat panel detector includes a gate driving circuit 10, a signal amplifying and reading circuit 101, and a plurality of pixel units 12 arranged in an array. For example, in some examples, each of the plurality of pixel units 12 includes a thin film transistor 104, a photodiode 106, a storage capacitor, and an X-ray conversion formed by a scintillator (cesium iodide) or a phosphor (gadolinium oxysulfide) Layer (not shown in the figure). For example, the storage capacitor can be provided separately, or can be formed by electrodes located on the upper and lower sides of the photodiode 106 (for example, the transparent electrode and the second electrode of the thin film transistor T, which will be described in detail later), which forms a reverse bias The photodiode capacitance. For example, in other examples, the pixel unit may further include a reset transistor and a switch transistor (not shown in the figure), which are connected to the above-mentioned thin film transistor 104 and the photodiode 106. For example, the reset transistor is controlled by a reset signal to work in the switching state, and when it is turned on, the voltage of the gate of the switching transistor is controlled at the cut-off voltage; the switching transistor is a source follower that works in a linear state, for example, Its gate is also connected to one end of the photodiode, so that its source output voltage follows the voltage change on the photodiode, and its gain is slightly less than 1. The thin film transistor 104 is still used as an output transistor and is controlled under the control of the gate scanning signal The output of the source voltage of the switching transistor. For example, the gate driving circuit 10 is respectively connected to the N rows of pixel units 12 through N gate lines, the signal amplifying and reading circuit 101 is respectively connected to the M columns of pixel units 12 through M data lines, and the N rows of pixel units 12 are respectively connected to The N bias wires 105 are connected to receive the bias voltage. As shown in Figure 1A, Gn represents the gate line connected to the pixel unit of the nth row, Gn+1 represents the gate line connected to the pixel unit of the n+1th row, and Dm-1 represents the gate line connected to the pixel unit of the m-1th column. Data line, Dm represents a data line connected to the pixel unit of the mth column, and Dm+1 represents a data line connected to the pixel unit of the m+1th column.

For example, the photodiode 106 operates under the bias voltage (reverse voltage) provided by the bias voltage line 105. When X-rays irradiate the array substrate, the X-ray conversion layer converts X-rays into visible light (for example, light with a wavelength range of 350nm-770nm). After the visible light is irradiated on the photodiode, the photodiode 106 will The visible light is converted into an electrical signal, for example, and the electrical signal is stored by a storage capacitor. Then, under the action of the gate scanning signal provided by the gate driving circuit 10 row by row, the thin film transistor 104 is turned on row by row, and the charge converted by the photodiode 106 is transmitted to the signal amplification and reading circuit 101 through the data line. The amplification and reading circuit 101 performs further amplification and analog/digital conversion processing on the electrical signal to obtain a digital signal, and transmits the digital signal to the computer's image processing system (for example, CPU or GPU, etc.) to form an X-ray image .

Figure 1B is a schematic diagram of the structure of a flat panel detector. As shown in FIG. 1B, the flat panel detector includes a base substrate 11 and a thin film transistor T, a photodiode 15, a transparent electrode 16, a bias line 19, a passivation layer 20, and a protective layer 21 formed on the base substrate 11. The manufacturing method of the flat panel detector includes the following steps.

First, the gate 121 of the thin film transistor T is formed on the base substrate 11; the gate insulating layer 122 and the active layer 13 are sequentially formed on the gate 121; the first electrode of the thin film transistor T (for example, , The source electrode) 141 and the second electrode (for example, the drain electrode) 142. For example, the gate 121 of the thin film transistor T is connected to the gate driving circuit 10 through a gate line to receive a gate scan signal (refer to FIG. 1A), and the second electrode 142 of the thin film transistor is connected to the photodiode 15 (will be described in the following step The first electrode 141 of the thin film transistor is connected to the signal amplifying and reading circuit 101 through the data line (refer to FIG. 1A) through the via hole on the first passivation layer 123, so that the thin film transistor T is connected to the gate When turned on under the control of the polar scanning signal, the electrical signal generated by the photodiode 15 is read.

It should be noted that the material of the active layer 13 may include oxide semiconductor, organic semiconductor, amorphous silicon, or polysilicon. For example, the oxide semiconductor includes metal oxide semiconductor (for example, indium gallium zinc oxide (IGZO)), polysilicon, etc. Including low-temperature polysilicon or high-temperature polysilicon, etc.

For example, the material of the gate insulating layer 122 may include inorganic insulating materials such as SiNx, SiOx, SiNxOy, organic insulating materials such as organic resins, or other suitable materials.

Secondly, a first passivation layer 123 is formed on the first electrode 141 and the second electrode 142 of the thin film transistor T, and a photodiode 15 is formed on the first passivation layer 123, and a continuous array of transparent electrodes is formed on the photodiode 15 Layer 16. For example, the first passivation layer 123 includes an opening area (that is, a via hole), and the photodiode 15 is connected to the second electrode 142 of the thin film transistor T through the opening area to pass the electrical signal generated by it through the second electrode of the thin film transistor T. The pole 142 and the first pole 141 are transmitted to the signal amplifying and reading circuit 101.

For example, a buffer insulating layer 17 and a second passivation layer 18 are formed on the transparent electrode layer 16, and a bias line 19 is formed on the second passivation layer 18. The bias line 19 is electrically connected to the bias terminal, and the bias The wire 19 is connected to the transparent electrode layer 16 through the via holes on the buffer insulating layer 17 and the second passivation layer 18, so as to provide a negative bias voltage for the transparent electrode layer 16 so that the photodiode is in working state.

Finally, a third passivation layer 20 is formed on the bias line 19, and silicon nitride of about 1 μm or an organic resin of 1 to 2 μm is formed on the third passivation layer 20 as the protective layer 21 of the photodiode. Alternatively, the protective layer 21 may also be a multilayer composite protective film including an inorganic layer and an organic layer.

For example, the materials of the first passivation layer 123, the buffer insulating layer 17, the second passivation layer 18, and the third passivation layer 20 may be the same as the material of the gate insulating layer 122, such as SiNx, SiOx, SiNxOy and other inorganic insulating materials. , Organic insulating materials such as organic resins or other suitable materials.

It can be seen from the above steps that the photodiode and the thin film transistor are formed on the same base substrate 11. If a flat-panel detector with this structure is used, when the size of the pixel unit is 140 μm, the filling rate of the pixel unit, that is, the photosensitive area of the pixel unit of the flat-panel detector is generally about 60% of the total area of the pixel unit. As a result, the effective photosensitive area of the flat panel detector is relatively low. Therefore, when the same dose of X-rays is used, the sensitivity of the flat-panel detector to obtain images is low, which will affect the diagnosis of fine tissue structures in medical applications. In particular, as the resolution of the flat panel detector increases, the size of a single pixel unit is reduced from 140 μm to 75 μm. At this time, the filling rate of the pixel unit is only about 40%, which severely restricts its use in the field of fine diagnosis (such as dental, Breast and other fields) applications.

In addition, a silicon nitride of about 1 μm or an organic resin of 1 to 2 μm is provided on the surface of the photodiode as a protective layer, which makes the flat-panel detector poor in resistance to external static electricity and scratch resistance. In the process of detecting and attaching it to the scintillator, static electricity or scratches are prone to occur, which can easily cause the failure of the photodiode.

An embodiment of the present disclosure provides a flat panel detector including a first substrate and a second substrate. The first substrate includes a driving circuit, the second substrate includes a photosensitive element, the first substrate and the second substrate are arranged opposite to the box, and the driving circuit is electrically connected with the photosensitive element to drive the photosensitive element. At least one embodiment of the present disclosure also provides a manufacturing method corresponding to the flat panel detector.

Regarding the flat panel detector provided by the above-mentioned embodiments of the present disclosure, on the one hand, the manufacturing process of the flat panel detector is relatively simple, and is formed by two layers of opposed substrates in a box, and in this structure, the photosensitive element can be on one of the substrates. The upper part is set as a whole layer, so it can effectively increase the filling rate of the photosensitive element in the pixel unit (that is, the photosensitive area), and improve the photosensitive performance of the flat panel detector, which can be applied to the field of fine diagnosis. On the other hand, the flat panel detector The upper and lower surfaces are all substrate materials, so in the process of using it for detection or attaching it to the scintillator, it can effectively prevent static electricity and scratches, and improve the photoelectric characteristics and yield of the flat panel detector.

The embodiments of the present disclosure and some examples thereof will be described in detail below with reference to the accompanying drawings.

FIG. 2 is a schematic structural diagram of a flat panel detector provided by at least one embodiment of the present disclosure. For example, the flat panel detector can be used to form X-ray images in the field of fine diagnosis, and has good photosensitivity.

In some examples, as shown in FIG. 2, the flat panel detector 100 includes a first substrate 111 and a second substrate 121. The first substrate 111 includes a driving circuit 112, and the second substrate 121 includes a photosensitive element 122. The first substrate 111 and the second substrate 121 are arranged opposite to each other, for example, a frame sealant 1150 is used to align the boxes, so that the driving circuit 112 and the photosensitive element 122 are electrically connected. Connected to drive the photosensitive element 122. For example, the driving circuit 112 and the photosensitive element 122 at least partially overlap in the direction in which the first substrate 111 and the second substrate 121 are directly opposite to each other, so that the driving circuit 112 and the photosensitive element 122 are electrically connected. For example, the sealant 1150 is applied around the periphery of the first substrate 111 or applied around the periphery of the second substrate 121; after the first substrate 111 and the second substrate 121 are boxed and joined together, they are heated or illuminated The frame sealing glue 1150 is cured.

For example, the driving circuit 112 may include transistors, such as field-effect transistors, thin film transistors, etc., and may also include storage capacitors as required; the photosensitive element 122 may include photodiodes or other organic photosensitive materials. For example, the photodiode is a PN-type photodiode, a PIN-type photodiode, or the like. For example, the material of the PIN-type photodiode is single crystal silicon, and the P-type layer, the I-type layer, and the N-type layer are sequentially stacked in the opposite direction of the second substrate 121 and the first substrate 111. For example, in the direction in which the second substrate 121 points to the first substrate 111, a P-type layer, an I-type layer, and an N-type layer are sequentially formed on the second substrate 121, thereby forming a PIN photodiode on the second substrate 121.

For example, the first substrate 111 further includes a first substrate 1111, the second substrate 121 further includes a second substrate 1211, and the driving circuit 112 is disposed on the first substrate 1111, and the photosensitive element 122 is disposed on the second substrate 1211. Above, the following embodiments are the same as this, and will not be repeated here. For example, the first substrate 1111 and the second substrate 1211 can be made of, for example, glass, plastic, quartz or other suitable materials, which are not limited in the embodiments of the present disclosure.

For example, the driving circuit 112 can be obtained by a semiconductor manufacturing process in the art. Hereinafter, a method of manufacturing the driving circuit 112 as a thin film transistor will be described as an example. For example, first, the gate electrode 1121 of the thin film transistor 112 is formed on the first substrate 111; the gate insulating layer 1130 and the active layer 1124 are sequentially formed on the gate electrode 1121; the first electrode of the thin film transistor 112 is formed on the active layer 1124. (For example, source) 1122 and second (for example, drain) 1123. For example, in this example, the gate 1121 of the thin film transistor 112 is connected to the gate driving circuit 10 shown in FIG. 1A through a gate line to receive the gate scan signal, and the second electrode 1123 of the thin film transistor 112 is connected to the photosensitive element 122. Through the via hole connection of the first passivation layer 1131 (which will be described in detail below), the first electrode 1122 of the thin film transistor 112 is connected to the signal amplifying and reading circuit 101 shown in FIG. 1A through a data line to When the thin film transistor 112 is turned on under the control of the gate scanning signal, the electrical signal generated by the photosensitive element 122 is read, and converted into a digital signal and transmitted to the image processing unit (for example, CPU, GPU, etc.) to form X-ray image.

For example, the materials used for the first electrode 1122, the second electrode 1123, and the gate 1121 of the thin film transistor 112 may include aluminum, aluminum alloy, copper, copper alloy, or any other suitable materials, and the embodiments of the present disclosure do not deal with this. limited.

It should be noted that the material of the active layer 124 may include oxide semiconductor, organic semiconductor, or amorphous silicon, polysilicon, etc., for example, the oxide semiconductor includes a metal oxide semiconductor (such as indium gallium zinc oxide (IGZO)), and the polysilicon includes Low-temperature polysilicon or high-temperature polysilicon, etc., which are not limited in the embodiments of the present disclosure.

For example, the material of the gate insulating layer 1130 may include inorganic insulating materials such as SiNx, SiOx, SiNxOy, organic insulating materials such as organic resins, or other suitable materials, which are not limited in the embodiments of the present disclosure.

For example, the first substrate 111 further includes a first passivation layer 1131, which can serve as a planarization layer so that the first substrate 111 has a substantially flat surface. For example, the second electrode 1123 of the above-mentioned thin film transistor 112 may be electrically connected to the photosensitive element 122 included in the second substrate 121 through the via hole in the first passivation layer 1131. It should be noted that the material of the first passivation layer 1131 can be the same material as the gate insulating layer 1130, which will not be repeated here.

For example, the photosensitive element 122 can be arranged in the entire layer on the second substrate 121, thereby increasing the filling rate of the photodiodes in the pixel unit, that is, the photosensitive area of the flat-panel detector, improving the photosensitive performance of the flat-panel detector, and facilitating its use in Application in the field of fine diagnosis. In addition, the flat panel detector 100 is composed of two substrates (ie, the first substrate 111 and the second substrate 121) arranged oppositely, and the two are bonded together by the sealant 1150 to align the box, so the manufacturing process is relatively simple.

In addition, the upper and lower surfaces of the flat-panel detector are made of substrate materials, so in the process of using it for detection or attaching it to the scintillator, it can effectively prevent static electricity and scratches, and improve the photoelectric characteristics and yield of the flat-panel detector.

In other examples, for example, on the basis of the example shown in FIG. 2, the flat panel detector further includes conductive glue 1132. For example, the conductive glue 1132 is disposed between the first substrate 111 and the second substrate 121 to further bond the two to the box. For example, in this example, the conductive adhesive 1132 may be disposed between the first passivation layer 1131 and the photosensitive element 122 to bond the first passivation layer 1131 and the photosensitive element 122 to the box, that is, the first substrate 111 and the The two substrates 121 are bonded to the box. For example, the conductive adhesive 1132 can also be directly coated on the photosensitive element 122. For example, when the photosensitive element is implemented as a PIN-type photodiode, that is, the photosensitive element 122 includes a P-type layer, an I-type layer, an N-type layer, and a conductive adhesive 1132 in sequence. The embodiment of the present disclosure does not limit this.

For example, the conductive adhesive 1132 includes a matrix resin and conductive fillers, that is, conductive particles. The conductive particles are combined by the bonding effect of the matrix resin to form a conductive path, thereby realizing the conductivity of the adhered material (such as the driving circuit 112 and the photosensitive element 122). connection. The conductive adhesive 1132 is divided into isotropic conductive adhesive and anisotropic conductive adhesive according to the conductive direction. For example, the flat panel detector 100 may use anisotropic conductive adhesive (ACA, Anisotropic Conductive Adhesive), that is, conduct electricity in one direction such as the Z direction (ie, the direction in which the conductive adhesive is squeezed), but in the X and Y directions ( (Vertical and extrusion direction) non-conductive, that is, the ACA is conductive in the opposite direction of the second substrate 121 and the first substrate 11, and non-conductive in the perpendicular and opposite direction, so that the first substrate 111 and the second substrate 121 are bonded together. While being fixed together, it is ensured that the electrical connection characteristics of the driving circuit 112 and the photosensitive element 122 remain unchanged.

FIG. 3 is a schematic structural diagram of another flat panel detector provided by at least one embodiment of the present disclosure. As shown in FIG. 3, the flat panel detector is similar in structure to the flat panel detector shown in FIG. 2, except that: the first substrate 111 also includes a light shielding layer 1141 and/or a conductive connection portion 1142; in addition, the second substrate 121 A transparent electrode layer 123 is also included. It should be noted that, for the sake of clarity and concise description, the similar parts of the flat-panel detector can refer to the related description in FIG. 2, which will not be repeated here.

For example, the transparent electrode layer 123 serves as the top electrode of the photosensitive element 122, and the second electrode 1123 of the thin film transistor 112 connected to the photosensitive element 122 through the conductive connection portion 1142 serves as the bottom electrode of the photosensitive element 122. For example, the top electrode is connected to the bias line 105 shown in FIG. 1A, and receives a constant voltage (for example, -6V) provided by the bias line 105. For example, when the bias line 105 provides a negative bias to the top electrode, the photosensitive element 122 is turned on, and when visible light (for example, the visible light can be obtained by converting X-rays by an X-ray conversion layer) is irradiated, the light signal is converted into An electrical signal, which can be stored in a storage capacitor (not shown). When the signal is read, the gate driving circuit 10 provides a gate scanning signal to the pixel unit row by row to turn on the thin film transistor 112 of the pixel unit row by row, so that the electrical signal generated by the photosensitive element 122 is transmitted to the thin film transistor through the conductive connection portion 1142 The second pole 1123 of 112, because the thin film transistor 112 is turned on, the first pole 1122 and the second pole 1123 of the thin film transistor 112 are connected, so the second pole 1123 can be received by the first pole 1122 of the turned on thin film transistor 112 The electrical signal is transmitted to the signal amplification and reading circuit 101 for subsequent processing, and the processed electrical signal is used to form an image.

4 is a schematic diagram of the structure of the first substrate 111 of the flat panel detector shown in FIG. 3. As shown in FIG. 4, based on the example shown in FIG. 2, the first substrate 111 further includes: forming a light shielding layer 1141 and a conductive connection portion 1142 on the first passivation layer 1131.

For example, the light shielding layer 1141 covers directly above the driving circuit 112, for example, on the side of the driving circuit 112 away from the first substrate 111, so as to be closer to the second substrate 121 than the driving circuit 112, that is, to the photosensitive element 122. For example, the light shielding layer 1141 may include opaque materials such as metal electrodes, dark resins, etc., so as to shield the driving circuit 112 from light, and prevent transmitted visible light from affecting the performance of the driving circuit 112.

For example, the conductive connection portion 1142 is electrically connected to the driving circuit 112, is disposed on the surface of the first substrate 111 and is electrically connected to the photosensitive element 122. For example, the first passivation layer 1131 includes an opening area (including via holes), and the conductive connection portion 1142 is disposed in the opening area. For example, when the light-shielding layer is made of a metal electrode or other material, the conductive connecting portion 1142 can be made of the same material as the light-shielding layer 1141; of course, when the flat panel detector includes conductive glue, the conductive connecting portion 1142 can also be conductive. Glue, conductive spacers, etc., or other conductive materials, so that the second electrode 1123 of the thin film transistor 112 can be connected to the photosensitive element 122 through the conductive connection portion 1142, thereby realizing the transmission of electrical signals. The conductive connection portion 1142 may also be a part of the second electrode 1123 of the thin film transistor 112, for example, connected to the photosensitive element 122 through the opening area of the first passivation layer 1131, which is not limited in the embodiment of the present disclosure.

For example, a third passivation layer (not shown in the figure) may be formed on the light shielding layer 1141. For example, the third passivation layer is used as a planarization layer, so that the first substrate 111 has a substantially flat surface to be bonded to the photosensitive element 122 in the second substrate 121 through conductive glue.

FIG. 5 is a schematic diagram of the structure of the second substrate 121 of the flat panel detector shown in FIG. 3. As shown in FIG. 5, on the basis of the example shown in FIG. 2, the second substrate 121 further includes: forming a transparent electrode layer 123 on the substrate of the second substrate, and then forming a photosensitive element 122 on the transparent electrode layer 123. For example, the second substrate 121 further includes a substrate (not shown in the figure), the transparent electrode layer 123 is formed on the substrate, and the photosensitive element 122 is disposed on the side of the transparent electrode layer 123 away from the substrate and is electrically connected to it.

For example, the transparent electrode layer 123 may use a material including transparent metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

For example, the second substrate 121 may also include a bias line (not shown in the figure), etc., and may be connected to the transparent electrode layer 123 through a via hole of the passivation layer provided on the transparent electrode layer 123, thereby being a transparent electrode layer. A constant negative bias is provided so that the photosensitive element 122 is in an operating state.

For example, the flat panel detectors shown in FIGS. 2 and 3 may also include a scanning circuit (for example, the gate drive circuit 10 shown in FIG. 1) and a voltage reading circuit (for example, the signal amplification circuit shown in FIG. 1A). And read circuit 101).

For example, the scanning circuit is connected to the driving circuit 112 and is configured to provide a scanning signal to control the driving circuit 112. For example, the scanning circuit can be implemented as the gate driving circuit 10 shown in FIG. 1A. It should be noted that the gate drive circuit 10 may be prepared as an integrated circuit chip or a GOA type gate drive circuit. The integrated circuit chip is electrically connected to the gate line by bonding, and the GOA type gate drive circuit may include multiple There are two cascaded shift register units, and the shift register unit may adopt 4T1C or other structures in the art, which will not be repeated here. For example, the thin film transistors constituting the gate driving circuit can be obtained through a unified semiconductor manufacturing process, and the specific manufacturing process can refer to the manufacturing process of the driving circuit 112 in the flat panel detector shown in FIG. 2.

For example, the voltage reading circuit is connected to the driving circuit 112 and is configured to read the voltage signal generated by the photosensitive element 122 through the driving circuit 112. For example, the voltage reading circuit can be implemented as the signal amplifying and reading circuit 101 shown in FIG. 1A, and the voltage signal read by it can be amplified and processed by analog-to-digital conversion to obtain a digital signal, and the digital signal Send to the image processing unit (for example, CPU, GPU, etc.) to form the corresponding image.

It should be noted that, for the sake of clarity and conciseness, the embodiments of the present disclosure do not provide all the constituent units of the flat panel detector. In order to realize the substrate function of the flat panel detector, those skilled in the art can provide and install other structures not shown according to specific needs, which are not limited in the embodiments of the present disclosure.

An embodiment of the present disclosure also provides a method for manufacturing the flat panel detector. Figure 6 shows a flow chart of a method for manufacturing a flat panel detector. For example, the manufacturing method can be used to realize the flat panel detector provided by any embodiment of the present disclosure. For example, the flat-panel detector shown in FIG. 2 can be implemented, and the flat-panel detector shown in Figure 3 can also be implemented. As shown in FIG. 6, the manufacturing method of the flat panel detector includes steps S110 to S130.

Step S110: forming a first substrate including a driving circuit.

Step S120: forming a second substrate including photosensitive elements.

Step S130: the first substrate and the second substrate are arranged opposite to each other to align the boxes, so that the driving circuit and the photosensitive element are electrically connected.

In step S110, for example, when the driving circuit 112 is implemented as a thin film transistor, the manufacturing method thereof includes: first, forming a gate 1121 of the thin film transistor 112 on the first substrate 111; and sequentially forming a gate insulating layer 1130 on the gate 1121 And the active layer 1124; the first electrode (for example, source) 1122 and the second electrode (for example, drain) 1123 of the thin film transistor 112 are formed on the active layer 1124. For the detailed introduction of this step S110, reference may be made to the introduction of the first substrate 111 of the flat panel detector shown in FIG. 2 and FIG. 3, which will not be repeated here.

In step S120, for example, when the photosensitive element 122 is implemented as a PIN-type photodiode, the manufacturing method thereof includes: sequentially forming a P-type layer, an I-type layer, and an N-type layer of the photodiode on the second substrate. For example, the photosensitive element 122 may form a whole layer on the second substrate 121, thereby increasing the filling rate of the photosensitive element 122, expanding the photosensitive area of the flat panel detector, and improving the photosensitive performance of the flat panel detector. For example, the detailed introduction of step S120 can refer to the introduction of the second substrate 121 of the flat panel detector shown in FIG. 2 and FIG. 3, which will not be repeated here.

In step S130, the first substrate 111 and the second substrate 121 are arranged in a box as shown in FIG. 2 or FIG. 3, for example, a frame sealant is used to join the two. For example, a first passivation layer 1131 is further formed on the first substrate 111 so that the first substrate 111 has a substantially flat surface. For example, the first passivation layer 1131 includes a via hole, and the second electrode 1123 of the above-mentioned thin film transistor 112 may be electrically connected to the photosensitive element 122 included in the second substrate 112 through the via hole in the first passivation layer 1131. For example, in step S130, the driving circuit 112 and the photosensitive element 122 may be set to at least partially overlap in the direction in which the first substrate 111 and the second substrate 122 are directly facing each other.

For example, in some examples, step S130 further includes: providing conductive glue between the first substrate 111 and the second substrate 121 to bond the two to the box. For example, in this example, a conductive glue may be disposed between the first passivation layer 1131 and the photosensitive element 122 to further bond the first passivation layer 1131 and the photosensitive element 122 to the box, that is, the first substrate 111 and the second substrate 111 The two substrates 121 are bonded to the box. For example, the conductive adhesive can refer to the detailed introduction of the embodiment shown in FIG. 2, which will not be repeated here.

For example, in some examples, step S110 further includes: covering the light-shielding layer 1141 directly above the driving circuit 112, and after the first substrate 111 and the second substrate 121 are arranged opposite to each other to align the boxes, the light-shielding layer 1141 is relative to the driving circuit 112. The circuit 112 is closer to the second substrate 121. For example, the light shielding layer 1141 may include opaque materials such as metal electrodes, dark resins, etc., so as to shield the driving circuit 112 from light, and prevent transmitted visible light from affecting the performance of the driving circuit 112. For example, the light shielding layer 1141 can refer to the detailed introduction of the flat panel detector shown in FIG. 4, which will not be repeated here.

For example, in some examples, step S110 further includes: forming a first passivation layer 1131 including an opening area on the driving circuit 112, and forming a conductive connection portion 1142 in the opening area of the first passivation layer 1131 to connect to the driving circuit. 112 and photosensitive element 122. For example, when the light-shielding layer is made of a metal electrode or other material, the conductive connection portion 1142 can be made of the same material as the light-shielding layer 1141; of course, when the flat panel detector includes conductive glue, the conductive connection portion 1142 can also be conductive. Glue, conductive spacers, etc., or other conductive materials, so that the second electrode 1123 of the thin film transistor 112 can be connected to the photosensitive element 122 through the conductive connection portion 1142, thereby realizing the transmission of electrical signals. The conductive connection portion 1142 may also be a part of the second electrode 1123 of the thin film transistor 112, for example, connected to the photosensitive element 122 through the opening area of the first passivation layer 1131, which is not limited in the embodiment of the present disclosure.

For example, in some examples, step S120 may further include: forming a transparent electrode layer 123 on the substrate of the second substrate 121, and then forming a photosensitive element 122 on the transparent electrode layer 123. For example, the photosensitive element 122 is disposed on and electrically connected to the side of the transparent electrode layer 123 away from the substrate. For example, the transparent electrode layer 123 may use a material including transparent metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO). For example, the transparent electrode layer 123 can refer to the detailed introduction of the flat panel detector shown in FIG. 5, which will not be repeated here.

For example, the manufacturing method of the flat panel detector further includes preparing a scanning circuit, a voltage reading circuit, and a bias line in the peripheral area of the array substrate.

For example, a bias line is formed on the second substrate 121 so that the bias line is connected to the transparent electrode layer 123 through the via hole of the passivation layer provided on the transparent electrode layer 123, thereby providing a constant negative voltage for the transparent electrode layer. The bias voltage makes the photosensitive element 122 work.

For example, a scanning circuit (for example, the gate driving circuit 10 shown in FIG. 1) is connected to the driving circuit 112 and is configured to provide a scanning signal to control the driving circuit 112. For example, the scanning circuit can be implemented as the gate driving circuit 10 shown in FIG. 1A. It should be noted that the gate drive circuit 10 may be prepared as an integrated circuit chip or a GOA type gate drive circuit. The integrated circuit chip is electrically connected to the gate line by bonding, and the GOA type gate drive circuit may include multiple There are two cascaded shift register units, and the shift register unit may adopt 4T1C or other conventional structures in the field, which will not be repeated here. For example, the thin film transistors constituting the gate drive circuit can be obtained through a unified semiconductor manufacturing process.

For example, a voltage reading circuit (for example, the signal amplification and reading circuit 101 shown in FIG. 1A) is connected to the driving circuit 112 and is configured to read the voltage signal generated by the photosensitive element 122 through the driving circuit 112. For example, the voltage reading circuit can be implemented as the signal amplifying and reading circuit 101 shown in FIG. 1A, and the voltage signal read by it can be amplified and processed by analog-to-digital conversion to obtain a digital signal, and the digital signal Send to the image processing unit (such as CPU, GPU, etc.) to form the corresponding image. For example, the signal amplifying and reading circuit 101 can be implemented as an integrated circuit chip.

It should be noted that, in the embodiment of the present disclosure, the process of the method for manufacturing the flat panel detector may include more or fewer operations, and these operations may be performed sequentially or in parallel. Although the flow of the manufacturing method described above includes multiple operations appearing in a specific order, it should be clearly understood that the order of the multiple operations is not limited. The above-described production method can be executed once or multiple times according to predetermined conditions.

Regarding the technical effects of the method for manufacturing the flat-panel detector provided in the foregoing embodiments, reference may be made to the technical effects of the flat-panel detector provided in the embodiments of the present disclosure, which will not be repeated here.

The following points need to be explained:

(1) The drawings of the embodiments of the present disclosure only refer to the structures related to the embodiments of the present disclosure, and other structures can refer to the usual design.

(2) In the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other to obtain new embodiments.

The foregoing descriptions are merely exemplary implementations of the present disclosure, and are not used to limit the protection scope of the present disclosure, which is determined by the appended claims.

Claims

A flat panel detector includes a first substrate and a second substrate; wherein,

The first substrate includes a driving circuit,

The second substrate includes a photosensitive element,

The first substrate and the second substrate are arranged opposite to the box, and the driving circuit is electrically connected with the photosensitive element to drive the photosensitive element.
The flat panel detector according to claim 1, wherein the first substrate further comprises a conductive connection part,

The conductive connecting portion is electrically connected to the driving circuit, is disposed on the surface of the first substrate, and is electrically connected to the photosensitive element.
The flat panel detector according to claim 2, wherein the conductive connection part comprises a metal electrode, a conductive glue or a conductive spacer.
The flat panel detector according to claim 2 or 3, wherein the first substrate further comprises a first passivation layer,

The first passivation layer is disposed between the conductive connection portion and the driving circuit,

The first passivation layer includes an open area,

The conductive connection part is arranged in the opening area.
The flat panel detector according to claim 4, wherein the first passivation layer is a planarization layer, so that the first substrate has a substantially flat surface.
The flat panel detector according to any one of claims 1-5, wherein the second substrate further comprises a substrate and a transparent electrode layer formed on the substrate,

The photosensitive element is arranged on a side of the transparent electrode layer away from the substrate and is electrically connected to the transparent electrode.
The flat panel detector according to any one of claims 1 to 6, further comprising conductive glue, wherein the conductive glue is arranged between the first substrate and the second substrate to bond the two to the box.
7. The flat panel detector according to any one of claims 1-7, wherein the driving circuit and the photosensitive element at least partially overlap in a direction in which the first substrate and the second substrate are directly opposite to each other.
The flat panel detector according to any one of claims 1-8, wherein the first substrate further comprises a light shielding layer,

Wherein, the light shielding layer is disposed on a side of the driving circuit away from the first substrate, so as to be closer to the second substrate than the driving circuit.
The flat panel detector according to any one of claims 1-9, wherein the first substrate comprises a first substrate, the second substrate comprises a second substrate, and the first substrate and the second substrate The substrate is glass or plastic.
The flat panel detector according to any one of claims 1-10, wherein the photosensitive element comprises a photodiode,

The photodiode is a PIN-type photodiode or a PN-type photodiode.
The flat panel detector according to claim 11, wherein the P-type layer, the I-type layer and the N-type layer of the PIN-type photodiode are sequentially stacked in a direction opposite to the second substrate and the first substrate .
The flat panel detector according to any one of claims 1-12, further comprising a scanning circuit, wherein the scanning circuit is connected to the driving circuit and is configured to provide a scanning signal to control the driving circuit.
The flat panel detector according to any one of claims 1-13, further comprising a voltage reading circuit, wherein the voltage reading circuit is connected to the driving circuit, and is configured to read the photosensitive circuit through the driving circuit. The voltage signal generated by the component.
A method for manufacturing a flat panel detector includes:

Forming a first substrate including a driving circuit;

Forming a second substrate including photosensitive elements;

The first substrate and the second substrate are arranged oppositely to align the boxes, so that the driving circuit and the photosensitive element are electrically connected.
The manufacturing method according to claim 15, further comprising:

Forming a first passivation layer including an open area on the driving circuit;

A conductive connection part is formed in the opening area to connect the driving circuit and the photosensitive element.
The manufacturing method according to claim 15 or 16, further comprising:

A light-shielding layer is provided on the side of the driving circuit away from the first substrate, and after the first substrate and the second substrate are arranged opposite to each other to align the boxes, the light-shielding layer is relative to the driving circuit Closer to the second substrate.
The manufacturing method according to any one of claims 15-17, wherein forming the second substrate including the photosensitive element comprises: forming a transparent electrode layer on the substrate of the second substrate, and then forming a transparent electrode layer on the transparent electrode layer. The photosensitive element is formed on a side away from the second substrate.
The manufacturing method according to any one of claims 15-18, further comprising:

A conductive glue is arranged between the first substrate and the second substrate to bond the two to the box.