CN103709939A - Silicon wafer grinding fluid - Google Patents
Silicon wafer grinding fluid Download PDFInfo
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- CN103709939A CN103709939A CN201310753300.2A CN201310753300A CN103709939A CN 103709939 A CN103709939 A CN 103709939A CN 201310753300 A CN201310753300 A CN 201310753300A CN 103709939 A CN103709939 A CN 103709939A
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Abstract
The invention relates to a silicon wafer grinding fluid which comprises 35-45 parts of alumina, 15-25 parts of silicon oxide, 10-15 parts of melamine, 11-15 parts of cerium oxide, 3-9 parts of a methacrylic acid, 2-5 parts of sodium silicate, 1-3 parts of zirconia, 4-13 parts of octadecy trimethyl ammonium bromide, 1-8 parts of poly dimethyl diallyl ammonium chloride, 2-7 parts of polyoxyethylene ether, 4-8 parts of dimethylsulfoxide cyclohexane, 3-6 parts of hydroxymethyl cellulose, 2-8 parts of a penetrant, and 3-9 parts of a surfactant. Through uniformly mixing the raw materials at a temperature of 110-130 DEG C, the grinding fluid is obtained, and the particle size of solid raw materials is 50-120 nm. A preparation method of the silicon wafer grinding fluid disclosed by the invention is simple and easy to implement, and the grinding precision and grinding efficiency of a grinding material prepared according to the invention are both high.
Description
Technical field
The present invention relates to a kind of lapping liquid.Be specifically related to a kind of grinding fluid for silicon chip
Background technology
Along with becoming more meticulous of existing life development, glossing is widely used, particularly at microelectronic, and day by day frivolous along with a large amount of device volumes, more and more higher on the contrary to the requirement of its performance, accordingly the requirement of glossing is also further improved.
Abrasive substance is the requisite of polishing technology, important component for grinding Liquid composition, also more and more stricter to its performance requriements, at present, the abrasive substance generally adopting is generally aluminum oxide, zirconium white, diamond, silicon oxide, cerium oxide, titanium oxide, silicon nitride etc., but in actual applications, the particle diameter of existing particle is little, surfactivity is large, particle Interaction Force is strong, and scattered nanoparticle is easily reunited, and affects the performance of grinding Liquid composition; Simultaneous grinding particle is as Nano diamond, aluminium sesquioxide, zirconium white, silicon nitride etc., and hardness is all larger, in polishing process the damage of effects on surface more serious, not only cause surfaceness larger, be also prone to the surface imperfection such as polishing cut, pit; The polishing speed of the materials such as while dispersiveness, the good silicon oxide of stability is lower again, can not meet the requirement of prior art.
Summary of the invention
The not high problem of abrasive substance precision that the present invention is prepared in order to solve prior art, provides all higher abrasive substances of a kind of grinding precision and mill efficiency.
A kind of grinding fluid for silicon chip comprises aluminum oxide 35-45 part, silicon oxide 15-25 part, trimeric cyanamide 10-15 part, cerium oxide 11-15 part, methacrylic acid 3-9 part, water glass 2-5 part, zirconium white 1-3 part, octadecyl trimethylammonium amine bromide 4-13 part, diallyl dimethyl ammoniumchloride 1-8 part, Soxylat A 25-7 2-7 part, methyl-sulphoxide hexanaphthene 4-8 part, Walocel MT 20.000PV 3-6 part, permeate agent 2-8 part, tensio-active agent 3-9 part.
Above-mentioned raw materials is blended at 110-130 ℃ and stirs and obtain lapping liquid, and the particle diameter of solid material is 50-120nm.
Preparation method of the present invention is simple, easily realizes, and the grinding precision of abrasive substance prepared by the present invention and mill efficiency are all very high.
Embodiment
Embodiment 1
A kind of grinding fluid for silicon chip comprises 35 parts, aluminum oxide, 20 parts of silicon oxide, 14 parts of trimeric cyanamides, 13 parts of cerium oxide, 5 parts of methacrylic acids, 4 parts of water glass, 2 parts of zirconium whites, 6 parts of octadecyl trimethylammonium amine bromides, 3 parts of diallyl dimethyl ammoniumchloride, 4 parts of Soxylat A 25-7s, 6 parts of methyl-sulphoxide hexanaphthenes, 5 parts of Walocel MT 20.000PVs, 5 parts of permeate agents, 6 parts, tensio-active agent.
Embodiment 2
A kind of grinding fluid for silicon chip comprises 40 parts, aluminum oxide, 22 parts of silicon oxide, 15 parts of trimeric cyanamides, 12 parts of cerium oxide, 5 parts of methacrylic acids, 5 parts of water glass, 3 parts of zirconium whites, 7 parts of octadecyl trimethylammonium amine bromides, 6 parts of diallyl dimethyl ammoniumchloride, 4 parts of Soxylat A 25-7s, 5 parts of methyl-sulphoxide hexanaphthenes, 5 parts of Walocel MT 20.000PVs, 5 parts of permeate agents, 4 parts, tensio-active agent.
Embodiment 3
A kind of grinding fluid for silicon chip comprises 38 parts, aluminum oxide, 21 parts of silicon oxide, 12 parts of trimeric cyanamides, 13 parts of cerium oxide, 6 parts of methacrylic acids, 3 parts of water glass, 2 parts of zirconium whites, 10 parts of octadecyl trimethylammonium amine bromides, 6 parts of diallyl dimethyl ammoniumchloride, 5 parts of Soxylat A 25-7s, 6 parts of methyl-sulphoxide hexanaphthenes, 4 parts of Walocel MT 20.000PVs, 6 parts of permeate agents, 7 parts, tensio-active agent.
Preparation method of the present invention is simple, easily realizes, and the grinding precision of abrasive substance prepared by the present invention and mill efficiency are all very high.
Here description of the invention and application is illustrative, not wants that therefore, the present invention is not subject to the restriction of the present embodiment by scope restriction of the present invention in the above-described embodiments, and the technical scheme that any employing equivalence replacement obtains is all in the scope of protection of the invention.
Claims (5)
1. a grinding fluid for silicon chip comprises: aluminum oxide, silicon oxide, trimeric cyanamide, cerium oxide, methacrylic acid, water glass, zirconium white, octadecyl trimethylammonium amine bromide, diallyl dimethyl ammoniumchloride, Soxylat A 25-7, methyl-sulphoxide hexanaphthene, Walocel MT 20.000PV, permeate agent, tensio-active agent; It is characterized in that described aluminum oxide 35-45 part, silicon oxide 15-25 part, trimeric cyanamide 10-15 part, cerium oxide 11-15 part, methacrylic acid 3-9 part, water glass 2-5 part, zirconium white 1-3 part, octadecyl trimethylammonium amine bromide 4-13 part, diallyl dimethyl ammoniumchloride 1-8 part, Soxylat A 25-7 2-7 part, methyl-sulphoxide hexanaphthene 4-8 part, Walocel MT 20.000PV 3-6 part, permeate agent 2-8 part, tensio-active agent 3-9 part.
2. a kind of grinding fluid for silicon chip as claimed in claim 1, is characterized in that 35 parts, aluminum oxide, 20 parts of silicon oxide, 14 parts of trimeric cyanamides, 13 parts of cerium oxide, 5 parts of methacrylic acids, 4 parts of water glass, 2 parts of zirconium whites, 6 parts of octadecyl trimethylammonium amine bromides, 3 parts of diallyl dimethyl ammoniumchloride, 4 parts of Soxylat A 25-7s, 6 parts of methyl-sulphoxide hexanaphthenes, 5 parts of Walocel MT 20.000PVs, 5 parts of permeate agents, 6 parts, tensio-active agent.
3. a kind of grinding fluid for silicon chip as claimed in claim 1, is characterized in that 40 parts, aluminum oxide, 22 parts of silicon oxide, 15 parts of trimeric cyanamides, 12 parts of cerium oxide, 5 parts of methacrylic acids, 5 parts of water glass, 3 parts of zirconium whites, 7 parts of octadecyl trimethylammonium amine bromides, 6 parts of diallyl dimethyl ammoniumchloride, 4 parts of Soxylat A 25-7s, 5 parts of methyl-sulphoxide hexanaphthenes, 5 parts of Walocel MT 20.000PVs, 5 parts of permeate agents, 4 parts, tensio-active agent.
4. a kind of grinding fluid for silicon chip as claimed in claim 1, is characterized in that 38 parts, aluminum oxide, 21 parts of silicon oxide, 12 parts of trimeric cyanamides, 13 parts of cerium oxide, 6 parts of methacrylic acids, 3 parts of water glass, 2 parts of zirconium whites, 10 parts of octadecyl trimethylammonium amine bromides, 6 parts of diallyl dimethyl ammoniumchloride, 5 parts of Soxylat A 25-7s, 6 parts of methyl-sulphoxide hexanaphthenes, 4 parts of Walocel MT 20.000PVs, 6 parts of permeate agents, 7 parts, tensio-active agent.
5. a kind of grinding fluid for silicon chip as claimed in claim 1, is characterized in that above-mentioned raw materials to be blended under 110-130 ° of C and to stir and obtain lapping liquid, and the particle diameter of solid material is 50-120nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310753300.2A CN103709939A (en) | 2013-12-31 | 2013-12-31 | Silicon wafer grinding fluid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310753300.2A CN103709939A (en) | 2013-12-31 | 2013-12-31 | Silicon wafer grinding fluid |
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| Publication Number | Publication Date |
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| CN103709939A true CN103709939A (en) | 2014-04-09 |
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| CN201310753300.2A Pending CN103709939A (en) | 2013-12-31 | 2013-12-31 | Silicon wafer grinding fluid |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104130715A (en) * | 2014-07-01 | 2014-11-05 | 安徽拓普森电池有限责任公司 | Polishing fluid for metal tungsten in semiconductor integrated circuits and preparation method thereof |
| CN104987839A (en) * | 2015-06-30 | 2015-10-21 | 安徽德诺化工有限公司 | Sapphire substrate grinding fluid used for LED |
| CN106634833A (en) * | 2016-12-16 | 2017-05-10 | 安徽宝恒新材料科技有限公司 | Grinding liquid for stainless steel mirror plate and preparation method thereof |
| CN107022311A (en) * | 2017-05-19 | 2017-08-08 | 南通华兴石油仪器有限公司 | A kind of oil instrument rare earth lapping liquid |
| CN107118743A (en) * | 2017-05-19 | 2017-09-01 | 南通华兴石油仪器有限公司 | A kind of oil instrument polishing special-purpose grinding fluid |
| CN108165177A (en) * | 2017-12-20 | 2018-06-15 | 重庆超硅半导体有限公司 | A kind of semi-conductor silicon chip lapping liquid stability control method |
| US11161751B2 (en) | 2017-11-15 | 2021-11-02 | Saint-Gobain Ceramics & Plastics, Inc. | Composition for conducting material removal operations and method for forming same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103059810A (en) * | 2012-12-19 | 2013-04-24 | 青岛博益特生物材料有限公司 | Grinding fluid |
-
2013
- 2013-12-31 CN CN201310753300.2A patent/CN103709939A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103059810A (en) * | 2012-12-19 | 2013-04-24 | 青岛博益特生物材料有限公司 | Grinding fluid |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104130715A (en) * | 2014-07-01 | 2014-11-05 | 安徽拓普森电池有限责任公司 | Polishing fluid for metal tungsten in semiconductor integrated circuits and preparation method thereof |
| CN104130715B (en) * | 2014-07-01 | 2015-09-23 | 安徽拓普森电池有限责任公司 | A kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof |
| CN104987839A (en) * | 2015-06-30 | 2015-10-21 | 安徽德诺化工有限公司 | Sapphire substrate grinding fluid used for LED |
| CN106634833A (en) * | 2016-12-16 | 2017-05-10 | 安徽宝恒新材料科技有限公司 | Grinding liquid for stainless steel mirror plate and preparation method thereof |
| CN106634833B (en) * | 2016-12-16 | 2018-07-24 | 安徽宝恒新材料科技有限公司 | A kind of stainless steel mirror board lapping liquid and preparation method thereof |
| CN107022311A (en) * | 2017-05-19 | 2017-08-08 | 南通华兴石油仪器有限公司 | A kind of oil instrument rare earth lapping liquid |
| CN107118743A (en) * | 2017-05-19 | 2017-09-01 | 南通华兴石油仪器有限公司 | A kind of oil instrument polishing special-purpose grinding fluid |
| US11161751B2 (en) | 2017-11-15 | 2021-11-02 | Saint-Gobain Ceramics & Plastics, Inc. | Composition for conducting material removal operations and method for forming same |
| CN108165177A (en) * | 2017-12-20 | 2018-06-15 | 重庆超硅半导体有限公司 | A kind of semi-conductor silicon chip lapping liquid stability control method |
| CN108165177B (en) * | 2017-12-20 | 2020-09-22 | 重庆超硅半导体有限公司 | Stability control method for semiconductor silicon wafer grinding fluid |
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Application publication date: 20140409 |