CN103701035A - Non-cleavage preparing method of cavity surfaces of side emitting semiconductor laser - Google Patents
Non-cleavage preparing method of cavity surfaces of side emitting semiconductor laser Download PDFInfo
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Abstract
The invention relates to a non-cleavage preparing method of cavity surfaces of a side emitting semiconductor laser. The method is characterized by comprising the steps of designing and generating a specific material structure of the laser, preparing a resonance cavity mask graph of the laser by using a photoetching method, selecting specific corrosive liquid according to the material structure of the laser, etching the resonance cavity, then performing lateral etching on a corrosion sacrificial layer with selective corrosive liquid to form a cantilever structure at the cavity surface of the laser, and forming a front cavity surface and a rear cavity surface of the laser by breaking the cantilever structure via supersonic. According to the method for preparing the front and rear cavity surfaces of the laser, the cavity surfaces with high quality of the laser can be formed without the need of cleavage of a substrate. The method can be used for forming the cavity surfaces of the laser under the specific conditions that the substrate of the laser is hard subjected to cleavage to form a high-quality cleavage surface, the substrate of the laser cannot be subjected to cleavage due to specific demands or the like.
Description
Technical field
The preparation method who the present invention relates to a kind of high-quality edge-emission semiconductor laser chamber face, belongs to semiconductor photoelectric device technical field.
Background technology
Silicon based opto-electronics integrated circuit technique is to utilize existing very lagre scale integrated circuit (VLSIC) technique that silicon based photon device and circuit are integrated on same chip, because silicon materials have absolute predominance aspect integrated, integrated optics technique with relative ripe microelectric technique all flourish, this impels opto-electronic device constantly to stride forward toward system integration direction, and the silicon-based monolithic integrated chip with compact conformation, the advantage such as with low cost is an important developing direction.
Silicon based photon is learned and is turned to development trend with high speed, economized, miniaturization, summary and intelligence, it is the crucial solution that solves the interconnect bottleneck problem facing in high-performance computer, high-end CPU and express network development, the light interconnection and the light exchange that can be applicable to general-purpose microprocessor chips, exclusive data process chip, HDTV (High-Definition Television) chip etc., have wide application and industrialization prospect.For example the interconnection of the chip chamber from chip internal interconnection (<2cm) to board level is again to the backplane interconnect of device level, from local area network (LAN)/storage networking to optical access network, from metropolitan area network again to the toll network over 1000 kilometers etc.The later interface of USB3.0 of personal computer will generally adopt light interconnection technique, Intel is setting about formulating the light interconnect standards such as LightPeak, message transmission rate towards the HDMI V1.3 in household consumption market has reached 10Gbps, the consumer light transmission market developing thus, by the emerging magnanimity market that is an over ten billion dollar.Therefore, development light interconnection technique, in research sheet, light interconnect required various silicon base photoelectricity integrated devices and unit, comprise integration laser on sheet, photo-detector, modulator and driver
In silicon based opto-electronics, the technical bottleneck of most critical is to lack silicon substrate laser.For communication band, mainly to adopt to mix integrated (Nature Photonics4 at present, 511 (2010)), Ji Ba III-V family laser material be bonded to silica-based on, but this bi-material substrate dimension is widely different, be difficult to upscaling, monolithic extension is integrated to be expected to realize silicon/III-V family material in large scale silicon-based substrate and to merge, and can also use CMOS technique to reduce device cost simultaneously.On silica-based, use IMF(interfacial misfit) method can realize high-quality Macrolattice mismatch antimonide mutation film-substrate, stress relaxation completes in silicon/III-V interface, overwhelming majority dislocation is limited on interface, unique channel (the L.Cerutti of to be existing employing method for integrating monolithic realize on silica-based room temperature electric pump laser, J.B.Rodriguez, and E.Tournie, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL.22, NO.8, APRIL15,2010).
Directly extension III-V semiconductor laser material is introduced many new requirement and restrictions to follow-up device technology on silica-based, and wherein the preparation of laser resonant cavity chamber face is an important link.Common silica-based III-V laser-substrate is silicon or SOI, due to what silicon or germanium material compared, in III-V compound, there is very high hardness, conventional mechanical cleavage is difficult to realize smooth chamber face, chamber face reflectivity reduces, optical loss increases, and therefore cannot prepare laser resonant cavity chamber face by the mechanical cleavage method of conventional semiconductor laser.The present invention intends proposing the preparation method of a kind of edge-emission semiconductor laser chamber face, utilizes the present invention can in the situation that not destroying substrate, utilize non-cleavage method to form high-quality chamber face, is beneficial to the integrated of follow-up laser and silicon-based devices.
Summary of the invention
In order to obtain the chamber face of high-quality silicon-based semiconductor laser, simultaneously do not destroy substrate so that subsequent conditioning circuit integrated, the object of the present invention is to provide a kind of non-cleavage preparation method of the brand-new resonator face of preparing high-quality edge-emission semiconductor laser, object is by the preparation of cantilever type laser resonant cavity, utilize the disconnected resonant cavity of the method shake two ends of external ultrasound, thereby form high-quality resonator face.
Preparation method characteristic of the present invention is: (1) is designed and the certain material structure of the laser of growing, and inserts corrosion sacrifice layer below laser active area; Described corrosion sacrifice layer can be directly below laser active area or below the waveguide of laser bottom light; (2) utilize photoetching method to prepare the resonant cavity mask pattern of laser, according to laser material structure etching resonant cavity; (3) recycling selective corrosion liquid carries out sideetching to corrosion sacrifice layer, forms cantilever design at laser cavity surface place; (4) utilize the ultrasonic shake cantilever design of breaking, form rear facet before laser.
(1) design on material structure of edge-emission semiconductor laser and growth
First below laser active area, insert corrosion sacrifice layer, then utilize the cantilever design at the excessive erosion formation laser resonant cavity two ends of sacrifice layer.For reaching this object, design aspect at the material structure of laser has an important feature, be exactly that the material structure of sacrifice layer top needs and sacrificial layer material has higher corrosion to select ratio, the corrosive agent that is used for corroding sacrificial layer material to the material structure corrosion rates such as active area above laser sacrifice layer much smaller than the corrosion rate to sacrifice layer.Therefore will be according to the whole material structure of laser, choose reasonable sacrificial layer material, corrosion sacrificial layer thickness is generally in 80-120 nanometer left and right, corrosion sacrifice layer can be directly below laser active area or below the waveguide of laser bottom light, corrosion sacrifice layer can be stable crystalline material, also can be by the unformed oxide that oxidation forms in exposure air or wet environment, the design of corrosion sacrifice layer should not affect passing through of Injection Current, and this is to realize the most important condition of the present invention.
(2) by lithographic method, prepare laser resonant cavity structure
First adopt laser conventional device technique to carry out the preparation of laser ridges, utilize wet chemical etching technique or dry etching, in conjunction with photoetching technique, prepare the cavity resonator structure of laser.Etching depth need to reach sacrifice layer, can etch into sacrifice layer cut-off, also can etching penetrate sacrifice layer, accompanying drawing 1 laser ridges structural representation.
(3) selectivity sideetching is prepared the cantilever design at resonant cavity two ends
According to laser material structure and sacrificial layer material structure, select the corrosive agent (corrosion rate of sacrifice layer is greater than to the corrosion rate to sacrifice layer top laser structure) of high selectivity, sacrificial layer material is corroded.Rationally control etching time, by sufficient corrosion, can form cantilever design at resonant cavity periphery, cantilever design need to surpass 10-15 micron.If use method for oxidation, should control the degree of depth of lateral oxidation, then use selective corrosion agent corrosion oxidation layer. referring to Fig. 2, laser device structure side view (left side), and sacrifice layer cantilever design (right side) schematic diagram of preparation.
(4) utilize the method for sonic oscillation to prepare chamber, resonant cavity both sides face.
After cantilever design completes, chip of laser is cleaned and is placed in deionized water.In this process, importantly, for avoiding cantilever design to be damaged, in burn into cleaning process, chip in liquid, can not be exposed in air all the time.Then the vessel that chip of laser is housed are placed in to ultrasonic concussion, choose reasonable ultrasonic power, can utilize ultrasonic that cantilever design shake is disconnected, thereby at resonant cavity two ends, form high-quality chamber face.See Fig. 3, utilize cantilever design, prepare laser cavity surface schematic diagram.
In sum, the invention provides a kind of method of the brand-new resonator face of preparing laser, object is by the preparation of cantilever type laser resonant cavity, utilizes the disconnected resonant cavity of the method shake two ends of external ultrasound, thereby forms high-quality resonator face.By method provided by the invention, can on the basis of not destroying laser-substrate material, form the chamber face of high-quality resonant cavity, can be difficult to for backing material the preparation of the laser cavity surface that cleavage (single silica-based or germanium based compound semiconductor laser) or backing material can not be destroyed, thereby obtain high-quality laser, swash and penetrate.
Accompanying drawing explanation
The conventional ridge strip structure sectional view of Fig. 1 laser, wherein InAlAs is corrosion sacrifice layer.
Fig. 2 laser device structure side view (left side), and sacrifice layer cantilever design (right side) schematic diagram.
Fig. 3 utilizes cantilever design, and laser cavity surface is prepared schematic diagram.
Fig. 4 utilizes side direction selective corrosion at the optical microscope photograph of the cantilever design of face place, chamber formation.
Fig. 5 utilizes the SEM photo of laser cavity surface prepared by the present invention.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
The non-cleavage of embodiment 1InGaAs quantum well edge-emitting laser chamber face is prepared concrete steps and is:
Utilize the present invention to prepare the front rear facet of limit transmitting InGaAs quantum-well laser, key step comprises: certain material structural design and the growth of (1) InGaAs quantum-well laser, and select InAlAs corrosion sacrificial layer material of the present invention; (2) by wet etching, prepare InGaAs quantum-well laser cavity resonator structure; (3) selectivity sideetching is prepared the cantilever design at InGaAs quantum-well laser resonant cavity two ends; (4) utilize the method for sonic oscillation to prepare chamber, resonant cavity both sides face.
Concrete steps are as follows:
(1) first according to InGaAs quantum-well laser device architecture, select suitable corrosion sacrifice layer, select the InAlAs high with InGaAs material corrosion selectivity as sacrificial layer material, there is higher corrosion to select ratio with InGaAs quantum well and the InP ducting layer of quantum-well laser active area, be beneficial to the enforcement of subsequent step.
(2) by the method for conventional chemical wet etching, prepare the cavity resonator structure of laser, corrosion cut-off or penetrate sacrifice layer above sacrifice layer.Adopt traditional photoetching method to prepare ridge waveguide mask, adopt the photoresist of the AZ5214 model of corrosion resistant U.S. An Zhi electronic material company.Etching condition is: photoresist applies with the speed of 2500 revs/min, 15 seconds time for exposure, and developing time 15 seconds, photoresist thickness is about 0.6-1.0 micron.The corrosive liquid that the preparation of ridge waveguide selects the red fuming nitric acid (RFNA) with 40% hydrobromic acid and 68% to mix, specifically proportioning is HBr(40%): HNO
3(65%): H
20=1:1:8(volume ratio), corrosion rate is about 2.5 micro-ms/min, and this corrosive agent is to InP, InGaAs, the corrosion of InAlAs non-selection, and corrosion rate approaches.Utilize this corrosive agent to prepare the cavity resonator structure of laser, be corroded through InAlAs corrosion sacrifice layer, below sacrifice layer, end.40% and 65% is concentration expressed in percentage by volume.
(3) preparation of laser cavity surface cantilever design.After laser resonant cavity structure prepares, remove photoresist, utilize selective corrosion agent to prepare the cantilever design at the front rear facet of laser place.First as required design photo etched mask, determine the length of width and the vallum of laser.Photoresist adopts AZ5214, and the photoetching process in technique and step 2 is basically identical.For the design of the corrosion sacrifice layer of InAlAs and sacrifice layer top material structure, we choose citric acid: the corrosive agent of hydrogen peroxide=3:1 carries out selective corrosion to sacrifice layer.Because this corrosive agent does not corrode substantially to InP, InGaAs corrosion rate is significantly less than to the corrosion rate to InAlAs, be about 1/10th of InAlAS corrosion rate.Therefore select suitable etching time, can form sideetching to sacrificial layer material, the material of sacrifice layer above and below is not all corroded, thereby at front rear facet place, form the structure of beam type.See Fig. 4.
(4) utilize the front rear facet of method preparation of sonic oscillation.The laser that forms cantilever beam structure is placed in solution and is not taken out, utilize deionized water displacement corrosive agent, then deionized water is put into together with chip to sonic oscillation, choose suitable ultrasonic power (100-150W) and ultrasonic time (5 minutes), utilize the cantilever at the ultrasonic oscillation functions shake front rear facet of disconnected laser place, thereby at front rear facet place, form the resonator face of laser.Seeing Fig. 5, is the SEM photo of resonant-cavity surface.
Utilize the present invention, successfully prepared the front rear facet of high-quality quantum-well laser, the substrate of laser is InP, and corrosion sacrifice layer is InAlAs.The laser that utilizes the present invention to prepare, front rear facet is smooth, and laser can form standing wave by resonance, and the backing material of resonant cavity below is not damaged.
The non-cleavage of embodiment 2 germanium base InAs/GaAs limit emissive quantum dots laser cavity surfaces is prepared implementation step:
Utilize the present invention to prepare the front rear facet of transmitting germanium base InAs/GaAs limit, limit emissive quantum dots laser, key step comprises: design on material structure and the growth of (1) germanium base InAs/GaAs quantum dot laser, and select AlAs the corrosion sacrificial layer material in the present invention; (2) by wet etching, prepare germanium base InAs/GaAs quantum dot laser cavity resonator structure; (3) selectivity sideetching is prepared the cantilever design at germanium base InAs/GaAs quantum dot laser resonant cavity two ends; (4) utilize the method for sonic oscillation to prepare chamber, resonant cavity both sides face.
Concrete steps are as follows:
1. first according to germanium base InAs/GaAs quantum dot laser device architecture, select suitable corrosion sacrifice layer, select the AlAs high with InAs, GaAs material corrosion selectivity as sacrificial layer material, there is higher corrosion to select ratio with InAs/GaAs quantum dot and the AlGaAS ducting layer of quantum-well laser active area, be beneficial to the enforcement of subsequent step.
2. by the method for conventional chemical wet etching, prepare the cavity resonator structure of laser, corrosion cut-off or penetrate sacrifice layer above sacrifice layer.Adopt traditional photoetching method to prepare ridge waveguide mask, adopt the photoresist of the AZ5214 model of corrosion resistant U.S. An Zhi electronic material company.Etching condition is: photoresist applies with the speed of 2500 revs/min, 15 seconds time for exposure, and developing time 15 seconds, photoresist thickness is about 0.6-1.0 micron.The corrosive liquid that the preparation of ridge waveguide selects the red fuming nitric acid (RFNA) with 40% hydrobromic acid and 68% to mix, specifically proportioning is HBr(40%): HNO
3(65%): H
20=1:1:8(volume ratio), corrosion rate is about 2.5 micro-ms/min, and this corrosive agent is to InAs, GaAs and the corrosion of AlGaAs non-selection, and corrosion rate approaches.Utilize this corrosive agent to prepare the cavity resonator structure of laser, be corroded through AlAs corrosion sacrifice layer, below sacrifice layer, end.
3. the preparation of laser cavity surface cantilever design.After laser resonant cavity structure prepares, remove photoresist, utilize selective corrosion agent to prepare the cantilever design at the front rear facet of laser place.First as required design photo etched mask, determine the length of width and the vallum of laser.Photoresist adopts AZ5214, and technique and the step photoetching process in is 2. basically identical.For the design of the corrosion sacrifice layer of AlAs and sacrifice layer top material structure, the hydrofluoric acid (10% volume ratio) that we choose dilution carries out selective corrosion to sacrifice layer.Because this corrosive agent does not corrode substantially to InAs, GaAs and AlGaAs, select than being greater than 100; Also to the corrosion rate of InAs, GaAs and AlGaAs, be that AlAs sacrifice layer corrosion speed is less than 1/100.Therefore select suitable etching time, can form sideetching to sacrificial layer material, the material of sacrifice layer above and below is not all corroded, thereby at front rear facet place, form the structure of beam type.
4. utilize the front rear facet of method preparation of sonic oscillation.The laser that forms cantilever beam structure is placed in solution and is not taken out, utilize deionized water displacement corrosive agent, then deionized water is put into together with chip to sonic oscillation, choose suitable ultrasonic power (100-150W) and ultrasonic time (5 minutes), utilize the cantilever at the ultrasonic oscillation functions shake front rear facet of disconnected laser place, thereby at front rear facet place, form the resonator face of laser.
Utilize the present embodiment can prepare the front rear facet of high-quality germanium base InAs/GaAs quantum dot laser, the substrate of laser is germanium, and corrosion sacrifice layer is AlAs.The laser that utilizes preparation, front rear facet is smooth, and laser can form standing wave by resonance, and the germanium backing material of resonant cavity below is not damaged.
Claims (9)
1. a non-cleavage preparation method for edge-emission semiconductor laser chamber face, is characterized in that comprising: (1) is designed and the certain material structure of the laser of growing, and inserts corrosion sacrifice layer below laser active area; (2) utilize photoetching method to prepare the resonant cavity mask pattern of laser, according to laser material structure etching resonant cavity; (3) recycling selective corrosion liquid carries out sideetching to corrosion sacrifice layer, forms cantilever design at laser cavity surface place; (4) utilize the ultrasonic shake cantilever design of breaking, form rear facet before laser.
2. by method claimed in claim 1, it is characterized in that concrete steps are:
(1) design on material structure of laser and growth
First below laser active area, insert corrosion sacrifice layer, then utilize the cantilever design at the excessive erosion formation laser resonant cavity two ends of sacrifice layer; The material structure of sacrifice layer top needs and sacrificial layer material has higher corrosion to select ratio, the corrosive agent that is used for corroding sacrificial layer material to the active area materials structure erosion speed above laser sacrifice layer much smaller than the corrosion rate to sacrifice layer;
(2) by lithographic method, prepare laser resonant cavity structure
First adopt laser conventional device technique to carry out the preparation of laser ridges, utilize wet chemical etching technique or dry etching, in conjunction with photoetching technique, prepare the cavity resonator structure of laser; Etching depth need to reach sacrifice layer, etches into sacrifice layer cut-off or etching and penetrates sacrifice layer;
(3) selectivity sideetching is prepared the cantilever design at resonant cavity two ends
According to laser material structure and sacrificial layer material structure, select the corrosion rate of sacrifice layer to be greater than the corrosive agent to the high selectivity of the corrosion rate of sacrifice layer top laser structure, sacrificial layer material is corroded; Rationally control etching time, by sufficient corrosion, at resonant cavity periphery, form cantilever design;
(4) utilize the method for sonic oscillation to prepare chamber, resonant cavity both sides face
After cantilever design completes, chip of laser is cleaned and is placed in deionized water, in burn into cleaning process, chip in liquid, can not be exposed in air all the time; Then the vessel that chip of laser is housed are placed in to ultrasonic concussion, choose reasonable ultrasonic power, utilize ultrasonic that cantilever design shake is disconnected, thereby at resonant cavity two ends, form high-quality chamber face.
3. by method claimed in claim 2, it is characterized in that:
(a) the corrosion sacrifice layer described in step (1) is directly below laser active area or below the waveguide of laser bottom light;
(b) described corrosion sacrifice layer is stable crystalline material or in exposure air or wet environment, is oxidized for passing through the unformed oxide forming.
4. by the method described in claim 1,2 or 3, it is characterized in that corroding sacrificial layer thickness is 80-120 nanometer.
5. by method claimed in claim 2, it is characterized in that the cantilever design described in step (3) surpasses resonant cavity periphery 10-15 micron.
6. by the method described in claim 1 or 2, the non-cleavage preparation process that it is characterized in that InGaAs quantum well edge-emitting laser chamber face comprises: certain material structural design and the growth of (1) InGaAs quantum-well laser, and select InAlAs corrosion sacrificial layer material; (2) by wet etching, prepare InGaAs quantum-well laser cavity resonator structure; (3) selectivity sideetching is prepared the cantilever design at InGaAs quantum-well laser resonant cavity two ends; (4) utilize the method for sonic oscillation to prepare chamber, resonant cavity both sides face;
Concrete steps are:
(1) first according to InGaAs quantum-well laser device architecture, select suitable corrosion sacrifice layer, select the InAlAs high with InGaAs material corrosion selectivity as sacrificial layer material, there is higher corrosion to select ratio with InGaAs quantum well and the InP ducting layer of quantum-well laser active area, be beneficial to the enforcement of subsequent step;
(2) by the method for conventional chemical wet etching, prepare the cavity resonator structure of laser, corrosion cut-off or penetrate sacrifice layer above sacrifice layer; Adopt traditional photoetching method to prepare ridge waveguide mask, adopt the photoresist of the AZ5214 model of corrosion resistant U.S. An Zhi electronic material company; Etching condition is: photoresist applies with the speed of 2500 revs/min, the corrosive liquid that the preparation of ridge waveguide selects the red fuming nitric acid (RFNA) with 40% hydrobromic acid and 68% to mix, and this corrosive agent is to InP, InGaAs, the corrosion of InAlAs non-selection, and corrosion rate is approaching; Utilize this corrosive agent to prepare the cavity resonator structure of laser, be corroded through InAlAs corrosion sacrifice layer, below sacrifice layer, end.
(3) preparation of laser cavity surface cantilever design, after laser resonant cavity structure prepares, removes photoresist, utilizes selective corrosion agent to prepare the cantilever design at the front rear facet of laser place; First as required design photo etched mask, determine the length of width and the vallum of laser; Photoresist adopts AZ5214, and technique is consistent with the photoetching process in above-mentioned steps (2); Design for the corrosion sacrifice layer of InAlAs and sacrifice layer top material structure, choose citric acid: the corrosive agent of hydrogen peroxide=3:1 carries out selective corrosion to sacrifice layer, this corrosive agent does not corrode substantially to InP, InGaAs corrosion rate is significantly less than to the corrosion rate to InAlAs, therefore select suitable etching time, sacrificial layer material is formed to sideetching, the material of sacrifice layer above and below is not all corroded, thereby at front rear facet place, form the structure of beam type;
(4) utilize the front rear facet of method preparation of sonic oscillation, the laser that forms cantilever beam structure is placed in solution, utilize deionized water displacement corrosive agent, then deionized water is put into together with chip to sonic oscillation, choosing ultrasonic power is 100-150W, utilizes the cantilever at the ultrasonic oscillation functions shake front rear facet of disconnected laser place, thereby at front rear facet place, forms the resonator face of laser, the substrate of laser is InP, and corrosion sacrifice layer is InAlAs.
7. by method claimed in claim 6, it is characterized in that:
A) the photoresist time for exposure described in step (2) is 15 seconds, and developing time is 15 seconds, and photoresist thickness is 0.6-1.0 micron;
B) the described corrosive liquid proportioning of step (2) is 40%HBr:65%HNO
3: H
20 volume ratio is 1:1:8, and corrosion rate is 2.5 micro-ms/min;
C) corrosive agent using in step (3) is only 1/10th of InAlAs to InGaAs corrosion rate;
D) the described ultrasonic time of step (4) is 5 minutes.
8. by the method described in claim 1 or 2, it is characterized in that the preparation process of the non-cleavage of germanium base InAs/GaAs limit emissive quantum dots laser cavity surface to comprise: design on material structure and the growth of (1) germanium base InAs/GaAs quantum dot laser, select AlAs corrosion sacrificial layer material; (2) by wet etching, prepare germanium base InAs/GaAs quantum dot laser cavity resonator structure; (3) selectivity sideetching is prepared the cantilever design at germanium base InAs/GaAs quantum dot laser resonant cavity two ends; (4) utilize the method for sonic oscillation to prepare chamber, resonant cavity both sides face;
Concrete steps are as follows:
1. first according to germanium base InAs/GaAs quantum dot laser device architecture, select suitable corrosion sacrifice layer, select the AlAs high with InAs, GaAs material corrosion selectivity as sacrificial layer material, there is higher corrosion to select ratio with InAs/GaAs quantum dot and the AlGaAS ducting layer of quantum-well laser active area, be beneficial to the enforcement of subsequent step;
2. by the method for conventional chemical wet etching, prepare the cavity resonator structure of laser, corrosion cut-off or penetrate sacrifice layer above sacrifice layer; Adopt traditional photoetching method to prepare ridge waveguide mask, adopt the photoresist of the AZ5214 model of corrosion resistant U.S. An Zhi electronic material company.Etching condition is: photoresist applies with the speed of 2500 revs/min, 15 seconds time for exposure, and developing time 15 seconds, photoresist thickness is about 0.6-1.0 micron; The corrosive liquid that the preparation of ridge waveguide selects the red fuming nitric acid (RFNA) with 40% hydrobromic acid and 68% to mix, specifically proportioning is 40%HBr:65%HNO
3: H
20=1:1:8, corrosion rate rate is 2.5 micro-ms/min, and this corrosive agent is to InAs, GaAs and the corrosion of AlGaAs non-selection, and corrosion rate approaches; Utilize this corrosive agent to prepare the cavity resonator structure of laser, be corroded through AlAs corrosion sacrifice layer, below sacrifice layer, end; 40% and 65% is concentration expressed in percentage by volume, and 1:1:8 is volume ratio;
3. the preparation of laser cavity surface cantilever design, after laser resonant cavity structure prepares, removes photoresist, utilizes selective corrosion agent to prepare the cantilever design at the front rear facet of laser place.First as required design photo etched mask, determine the length of width and the vallum of laser; Photoresist adopts AZ5214, and technique and the step photoetching process in is 2. consistent; For the design of the corrosion sacrifice layer of AlAs and sacrifice layer top material structure, the 10% volume ratio hydrofluoric acid of choosing dilution carries out selective corrosion as corrosive agent to sacrifice layer; This corrosive agent does not corrode substantially to InAs, GaAs and AlGaAs; Select suitable etching time, sacrificial layer material is formed to sideetching, the material of sacrifice layer above and below is not all corroded, thereby at front rear facet place, form the structure of beam type;
4. utilize the front rear facet of method preparation of sonic oscillation, the laser that forms cantilever beam structure is placed in solution, utilize deionized water displacement corrosive agent, then deionized water is put into together with chip to sonic oscillation, choose 100-150W ultrasonic power, utilize the cantilever at the ultrasonic oscillation functions shake front rear facet of disconnected laser place, thereby at front rear facet place, form the resonator face of laser;
By rear facet before 1.-germanium base InAs/GaAs quantum dot laser that 4. prepared by step, the substrate of laser is germanium, and corrosion sacrifice layer is AlAs.
9. by method claimed in claim 8, it is characterized in that:
A) the photoresist exposure gadget of step described in is 2. 15 seconds, and developing time is 15 seconds, and photoresist thickness is 0.6-1.0 micron;
B) step 2. described corrosive liquid proportioning be 40%HBr:65%HNO
3: H
20 volume ratio is 1:1:8, corrosion rate be 2.5 micro-ms/min;
C) step 3. in, the corrosion rate of InAs, GaAs and AlGaAs is only less than to 1/100 for AlAs sacrifice layer corrosion speed;
D) step 4. in, described ultrasonic time is 5 minutes;
E) before prepared laser, rear facet is smooth, and laser forms standing wave by resonance, and the germanium backing material of resonant cavity below is not received destruction.
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| CN105742957A (en) * | 2016-03-24 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | Regeneration method of edge-emitting semiconductor laser cavity surface |
| CN107768459A (en) * | 2017-10-24 | 2018-03-06 | 超晶科技（北京）有限公司 | Laser and detector of a kind of indium phosphorus nitrogen bismuth material and preparation method thereof and use material and preparation method thereof |
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| CN105742957B (en) * | 2016-03-24 | 2018-12-25 | 中国科学院上海微系统与信息技术研究所 | A kind of regeneration method of edge-emission semiconductor laser Cavity surface |
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