CN103700783B - The optical grating construction taken out for oled light - Google Patents
The optical grating construction taken out for oled light Download PDFInfo
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- CN103700783B CN103700783B CN201310747613.7A CN201310747613A CN103700783B CN 103700783 B CN103700783 B CN 103700783B CN 201310747613 A CN201310747613 A CN 201310747613A CN 103700783 B CN103700783 B CN 103700783B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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Abstract
The invention discloses one kind to be used for Organic Light Emitting Diode（OLED）The optical grating construction that light takes out, the lattice structure that high low-index material is alternately arranged composition is provided between glass substrate and transparent anode, the cross section of refraction materials is closed figure, wherein it is relative with glass substrate in a parallel to the while b contacted with glass substrate, and 0≤a≤b（b≠0）；The refractive index of the high-index material is not less than 1.8, and the refractive index of the low-index material is not more than 1.5.Using the optical grating construction of the present invention, the light that the alternate optical grating construction of refractive index height takes out waveguide mode is added between glass substrate and OLED anodes, contacts reduction total reflection with substrate using high-index material, so as to improve OLED or shield the efficiency of body.
Description
Technical field
The present invention relates to light to take out technology, the optical grating construction that more particularly, to oled light takes out.
Background technology
Calculated according to classical Ray optical theory, in the Organic Light Emitting Diode of traditional bottom-emission（OLED）In, by
Substrate emergent light only account for luminescent layer produce light 20%, remaining light by substrate waveguide pattern, ITO/ organic layers waveguide mode,
Cathode plasma mode losses are fallen, and far can not meet the technical requirements for illuminating and showing.Someone passes through in substrate and anode
Between insert the alternate structure enhancing light of refractive index height and take out, but high index of refraction part and substrate contact area are big, extract
Effect is unsatisfactory.
The content of the invention
In view of this, it is a primary object of the present invention to provide it is a kind of for oled light take out optical grating construction, by
Inserted between glass substrate and transparent anode refractive index height alternately, section be trapezoidal or triangle optical grating construction to take out ripple
The light of waveguide mode, by controlling trapezoidal angle and the contact area of high index of refraction part and substrate, so as to improve OLED
Or the light extraction efficiency of screen body.
To reach above-mentioned purpose, the technical proposal of the invention is realized in this way：
A kind of optical grating construction taken out for oled light, is provided with high low-refraction between glass substrate and transparent anode
The lattice structure that region is alternately arranged；The cross section of the region of low refractive index is closed figure, wherein with glass substrate phase
To in a parallel to the while b contacted with glass substrate, and 0≤a≤b（b≠0）；The Refractive Index of Material of the high-refractive-index regions
Not less than 1.8, the refractive index of the material of the region of low refractive index is not more than 1.5.
Wherein, the material of the region of low refractive index is transparent photomask glue, or to mix one in the transparent photomask glue
Dopant material made of the low-index material of certainty ratio.
The composition of the photoresist is：5 ~ 30 wt% include molecular weight be 30000 ~ 90000 novolac resin and
Molecular weight is the mixed polymerization resin of 3500 ~ 10000 fractionated novolac resins；2 ~ 10 wt% diazide type
Photoactive compounds；0.1 ~ 10 wt% sensitising agent；And 60 ~ 90 wt% organic solvents.
Low-index material in the dopant material is SiO2、AlF3、BaF2、CaF2、LiF、MgF2, NaF or Na2AlF6
One of.
The material of the high-refractive-index regions is filled between the material of the region of low refractive index.
The material of the high-refractive-index regions is：ZnSe、ZnS、TiO2、ZrO2、BaS、BaTiO3、CaO、Gd2O3、Eu2O3、
One of ITO or its any combination mixture.
The lattice structure that the region of low refractive index is formed is the network structure of the horizontally arranged composition of arbitrary polygon.
The arbitrary polygon is equilateral triangle, square or regular hexagon.
The thickness d 2 and width b of the region of low refractive index are more than the length that diffraction occurs for optical wavelength.
Region of low refractive index form cellular grid width b be 0.5 μm ~ 5 μm, the cellular grid at intervals of 2
μm ~ 10 μm, the thickness of the cellular grid is at 0.1 μm ~ 10 μm, preferably 0.1 μm ~ 5 μm.
The height refractive-index grating structure provided by the present invention taken out for oled light, has advantages below：
The light that the alternate optical grating construction of refractive index height takes out waveguide mode is added between glass substrate and OLED anodes,
Reduction total reflection is contacted with substrate using high-index material, so as to improve OLED or shield the efficiency of body.
Brief description of the drawings
Fig. 1 is the schematic cross-section of embodiment one that the present invention is used for the height refractive-index grating structure that oled light takes out；
Fig. 2 is another embodiment schematic cross-section that the present invention is used for the height refractive-index grating structure that oled light takes out；
Fig. 3 is that the present invention is used for the another embodiment schematic cross-section of height refractive-index grating structure that oled light takes out；
Fig. 4 is height index distribution schematic diagram in optical grating construction of the invention.
Embodiment
Below in conjunction with the accompanying drawings and embodiments of the invention are further detailed to the height refractive-index grating structure work of the present invention
Explanation.
Fig. 1, Fig. 2 are the section signal that the present invention is used for the height refractive-index grating constructive embodiment that oled light takes out
Figure.As shown in Figure 1 and Figure 2, light exports from reflecting electrode 1 to the direction of substrate 5, between the reflecting electrode 1 and transparent anode 3
For luminescent layer 3.The lattice structure 4 for setting high region of low refractive index to be alternately arranged between glass substrate 5 and transparent anode 3.
The cross section of the region of low refractive index is closed figure, wherein the side a relative with glass substrate 5 parallel to glass substrate 5
The side b of contact, and 0≤a≤b（b≠0）.The Refractive Index of Material of the high-refractive-index regions is not less than 1.8, the low-refraction
The refractive index of the material in region is not more than 1.5.
Here, the thickness d 2 of the lattice structure 4 and width b are more than the length that diffraction occurs for optical wavelength.The trapezoid
Angle with glass substrate is between 0 ° to 90 °, between optimal angle is 35 ° to 55 °.Section is the low-index regions of trapezoid
The grid light transmittance in domain is 75%~99%.Two trapezoidal hypotenuses can also be irregular shape, be illustrated in figure 2 ripple
Shape；The trapezoidal side a relative with glass substrate 5 can be 0, and region of low refractive index as shown in Figure 3 is triangle.
The cellular grid that the region of low refractive index is formed, width b are 0.5 μm ~ 5 μm, the cellular grid at intervals of
2 μm ~ 10 μm, the repetition period of each of which grid is d1.The scope of thickness d 2 of the cellular grid is excellent at 0.1 μm ~ 10 μm
Elect 0.1 μm ~ 5 μm as.The net-shaped for being shaped as the horizontally arranged composition of any N sides shape of the low-refraction grid, wherein, any N
Side shape is the shapes such as equilateral triangle, square or regular hexagon.
Low-refraction grid can be prepared by transparent photomask glue, or mix low-refraction by a certain percentage in transparent photomask glue
Material is made.
Described low-index material is optional：SiO2、AlF3、BaF2、CaF2、LiF、MgF2、NaF、Na2AlF6Deng.
The refractive index of the material is as shown in following table one.
The composition of described transparent photomask glue, including：1）5 ~ 30 wt%'s includes the phenolic aldehyde that molecular weight is 30000 ~ 90000
Varnish gum and molecular weight are the mixed polymerization resin of 3500 ~ 10000 fractionated novolac resins；2）The two of 2 ~ 10 wt%
Azides of type Photoactive compounds；3）0.1 ~ 10 wt% sensitising agent；And 4）60 ~ 90 wt% organic solvent.
The high-refractive-index regions can material selection have ZnSe, ZnS, TiO2、ZrO2、BaS、BaTiO3、CaO、Gd2O3、
Eu2O3, several mixtures of one of ITO or any.Preferably tin indium oxide（ITO）, it can both make flatness layer, electrode can be made again.
The refractive index of the high-index material is as shown in Table 2.
Following technological process can be used to make：It is by evaporation or sputtering sedimentation thickness on the glass substrate cleaned up
1800nm~2000nm ITO electrode, evaporation prepare OLED, be followed successively by hole injection layer, hole transmission layer, luminescent layer,
Electron transfer layer, electron injecting layer and cathode layer.
Embodiment 1：By wet etching or dry etching to transparent photomask glue（The mixing of 10 wt% novolac resin
Fluoropolymer resin；6 wt% diazide type photosensitive compound；4 wt% sensitising agent；And 80 wt% organic solvents）Enter
Row is graphical, and OLED is prepared by the ITO electrode that sputtering sedimentation thickness is 1800nm~2000nm, then by evaporation.Work
Skill flow with it is preceding same.
Embodiment 2：By transparent photomask glue（The mixed polymerization resin of 10 wt% novolac resin；The two of 6 wt% are folded
Nitride type Photoactive compounds；4 wt% sensitising agent；And 80 wt% organic solvents）With MgF2By 1.5:1 mass ratio mixes
Close, the spin coating transparent photomask glue on the glass substrate cleaned up, transparent photomask glue is entered by wet etching or dry etching
Row is graphical, and OLED is prepared by the ITO electrode that sputtering sedimentation thickness is the nm of 1800nm~2000, then by evaporation.Work
Skill flow with it is preceding same.
In above-described embodiment, the thickness of ITO electrode is more than grid thickness.With white light organic electroluminescent device (WOLED,
White Organic Light Emitting Diodes) exemplified by illustrate, in the embodiment, the knot of the WOLED devices
Structure is as follows：
ITO/NPB (20nm)/TCTA (30nm)/TCTA (30nm):Ir(ppy)3 (15%):Ir(MDQ)2acac
(1%)/TCTA:Bebq2 (5nm, 1:1)/ Bebq2 (20nm):BD (5%)/ Bebq2 (20nm)/LiF (0.5nm)/Al
(150nm)。
Following table is respectively when be free of lattice structure, during the lattice structure prepared by transparent photomask glue and dopant material preparation
Lattice structure when device brightness contrast effect.
It can be seen from table three：
During without lattice structure, the brightness of the white light parts is about 1012cd/m under 4V voltages2。
In embodiment 1, using in embodiment 1 glue containing transparent photomask prepare lattice structure when, the white light under 4V voltages
The brightness of device is about 1410cd/m2。
Using in embodiment 2 by transparent photomask glue and MgF2By 1.5:Grid prepared by the dopant material of 1 mass ratio mixing
During lattice structure, the brightness of the white light parts is about 1500cd/m under 4V voltages2。
The alternate structure of refractive index height is prepared on the glass substrate, and the surface of high-index material is flat, can be thereon
Direct precipitation OLED anodes.Low-index material refractive index is less than or equal to 1.5, and high-index material is more than or equal to 1.8, and height is rolled over
Rate difference is penetrated more than or equal to 0.3.The distribution situation of the high low-index material, as shown in Figure 2.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the scope of the present invention.
Claims (8)
1. a kind of optical grating construction taken out for oled light, it is characterised in that be provided between glass substrate and transparent anode
The lattice structure that high region of low refractive index is alternately arranged；The cross section of the region of low refractive index is closed figure, wherein with
Glass substrate it is relative in a parallel to the while b contacted with glass substrate, and 0≤a ＜ b；The material folding of the high-refractive-index regions
Rate is penetrated not less than 1.8, the refractive index of the material of the region of low refractive index is not more than 1.5, what the region of low refractive index was formed
Lattice structure is the network structure of the horizontally arranged composition of arbitrary polygon, and the material of the region of low refractive index is in transparent photomask
Dopant material made of a certain proportion of low-index material is mixed in glue.
2. the optical grating construction according to claim 1 taken out for oled light, it is characterised in that the transparent photomask glue
Composition is：The mixed polymerization resin of 5 ~ 30 wt% novolac resin；2 ~ 10 wt% diazide type photosensitive
Compound；0.1 ~ 10 wt% sensitising agent；And 60 ~ 90 wt% organic solvents；The mixed polymerization resin of the novolac resin,
Including the novolac resin that molecular weight is 30000 ~ 90000 and the fractionated novolac resins that molecular weight is 3500 ~ 10000.
3. the optical grating construction according to claim 1 taken out for oled light, it is characterised in that in the dopant material
Low-index material is SiO2、AlF3、BaF2、CaF2、LiF、MgF2, NaF or Na2AlF6One of.
4. the optical grating construction according to claim 1 taken out for oled light, it is characterised in that the high-refractive-index regions
Material be filled between the material of the region of low refractive index.
5. the optical grating construction according to claim 1 taken out for oled light, it is characterised in that the high-refractive-index regions
Material be：ZnSe、ZnS、TiO2、ZrO2、BaS、BaTiO3、CaO、Gd2O3、Eu2O3, one of ITO or its any combination it is mixed
Compound.
6. the optical grating construction according to claim 1 taken out for oled light, it is characterised in that the arbitrary polygon is
Equilateral triangle.
7. the optical grating construction according to claim 1 taken out for oled light, it is characterised in that the region of low refractive index
Thickness d 2 and width b be more than optical wavelength occur diffraction length.
8. the optical grating construction according to claim 7 taken out for oled light, it is characterised in that region of low refractive index is formed
Cellular grid width b be 0.5 μm ~ 5 μm, the cellular grid at intervals of 2 μm ~ 10 μm, the cellular grid
Thickness is at 0.1 μm ~ 10 μm.
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| TWI570987B (en) * | 2014-11-06 | 2017-02-11 | 財團法人工業技術研究院 | Light extraction structure and method for fabricating the same, and organic light-emitting device employing the same |
| CN105810841B (en) * | 2014-12-29 | 2018-05-01 | 固安翌光科技有限公司 | A kind of organic electroluminescence device |
| WO2018013160A1 (en) | 2016-07-12 | 2018-01-18 | Corning Incorporated | Waveguide comprising light extraction nanostructures and display devices comprising the same |
| CN107689426B (en) * | 2017-09-30 | 2024-04-05 | 京东方科技集团股份有限公司 | Light emitting device, electronic device and manufacturing method of light emitting device |
| CN108511623B (en) * | 2018-03-30 | 2021-01-26 | 京东方科技集团股份有限公司 | Light extraction structure, display screen body, manufacturing method of display screen body and display device |
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| CN1441629A (en) * | 2002-02-27 | 2003-09-10 | 三星Sdi株式会社 | Organic electroluminescence display device and its producing method |
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| CN102326447A (en) * | 2009-02-24 | 2012-01-18 | 住友化学株式会社 | Substrate and organic el device |
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| KR100730121B1 (en) * | 2004-11-29 | 2007-06-19 | 삼성에스디아이 주식회사 | An organic electroluminescent display device and method for preparing the same |
| JP2007095326A (en) * | 2005-09-27 | 2007-04-12 | Dainippon Printing Co Ltd | Organic el display and method of manufacturing same |
| TW201123961A (en) * | 2009-12-28 | 2011-07-01 | Au Optronics Corp | Organic light emitting diode (OLED) display device |
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| CN1441629A (en) * | 2002-02-27 | 2003-09-10 | 三星Sdi株式会社 | Organic electroluminescence display device and its producing method |
| CN102326447A (en) * | 2009-02-24 | 2012-01-18 | 住友化学株式会社 | Substrate and organic el device |
| CN102110778A (en) * | 2009-12-25 | 2011-06-29 | 昆山维信诺显示技术有限公司 | Organic electroluminescence device |
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Effective date of registration: 20181212 Address after: 065700 Lanyuan S3 Building, Peacock City, Bazhou, Langfang City, Hebei Province Patentee after: Bazhou Yungu Electronic Technology Co. Ltd. Address before: 100085 First Floor of Huanyang Building, No. 1 Shangdi East Road, Haidian District, Beijing Patentee before: Weixinnuo Science and Technology Co., Ltd., Beijing |
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Application publication date: 20140402 Assignee: Yungu (Gu'an) Technology Co., Ltd.|Kunshan Guoxian photoelectric Co., Ltd.|Kunshan Institute of technology new flat panel display technology center Co., Ltd Assignor: Bazhou Yungu Electronic Technology Co. Ltd. Contract record no.: X2019990000154 Denomination of invention: Grating structure for OLED (organic light emitting diode) light extraction Granted publication date: 20180320 License type: Common License Record date: 20191030 |
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