CN103700738A - 基于特殊基底的led封装方法及led装置 - Google Patents
基于特殊基底的led封装方法及led装置 Download PDFInfo
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- 239000010703 silicon Substances 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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Abstract
本发明涉及一种基于特殊基底的LED封装方法及LED装置。传统的封装工艺,基底材料价格很高,银胶固晶的热阻也很大,另外焊接芯片的金线很细导致在外力冲击和温度交变的情况下会发生断裂,本发明步骤包括:1)用硅基材料制作成硅片;2)通过激光器在硅片上打孔,把打孔后的硅片进行硅片清洗,去除硅片表面和孔内的粉末;3)在整个硅片上蒸镀铜膜,由于膜的厚度不足还需要电镀铜膜以保证铜膜的导电率;4)在镀膜后的硅片上图形转换,划出绝缘区并腐蚀出所需的电路图形,将LED芯片在电路上共晶焊接;5)在芯片上注塑透镜,划片形成单体LED。本发明用于LED封装。
Description
技术领域:
本发明涉及一种LED封装工艺及LED装置。
背景技术:
LED的封装主要有点胶、灌封、模压三种。基本上工艺控制的难点是气泡、多缺料、黑点。设计上主要是对材料的选型,选用结合良好的环氧和支架。手动点胶封装对操作水平要求很高主要难点是对点胶量的控制,因为环氧在使用过程中会变稠。白光LED的点胶还存在荧光粉沉淀导致出光色差的问题。
现有的LED封装工艺都是通过在蓝宝石衬底上利用银胶进行固晶,然后焊线并注塑透镜形成的。传统的封装工艺,基底材料价格很高,银胶固晶的热阻也很大,另外焊接芯片的金线很细导致在外力冲击和温度交变的情况下会发生断裂,整体有很多亟待改善的细节。
发明内容:
本发明的目的在于提供一种基于特殊基底的LED封装方法及LED装置。
本发明的目的是这样实现的:
一种基于特殊基底的LED封装方法,其步骤包括:
1)用硅基材料制作成硅片;
2)通过激光器在硅片上打孔,把打孔后的硅片进行硅片清洗,去除硅片表面和孔内的粉末;
3)在整个硅片上蒸镀铜膜,由于膜的厚度不足还需要电镀铜膜以保证铜膜的导电率;
4)在镀膜后的硅片上图形转换,划出绝缘区并腐蚀出所需的电路图形,将LED芯片在电路上共晶焊接;
5)在芯片上注塑透镜,划片形成单体LED。
所述的基于特殊基底的LED封装方法封装的装置,其组成包括:硅片,所述的硅片上有开孔,在所述的硅片蒸镀并电镀铜膜,腐蚀出需要的电路图形 ,把芯片的正负极共晶焊接到开孔上,在所述的芯片上注塑有硅胶透镜。
有益效果:
1.本发明通过采用硅基板作为基底,降低了成本,降低了热阻。
2.利用小孔内的铜层代理了传统封装结构内的金线,消除了金线熔断导致LED熄灭的风险。
3.本发明通过共晶焊接代替了传统封装工艺中的银胶固晶,降低了LED的热阻。
4.本发明结构简单,制造工艺也极为简便,开发和生产成本显著降低。
附图说明:
附图1是LED装置整体示意图。
附图2是单体LED装置的示意图。
附图3是单体LED的剖面图。
具体实施方式:
实施例1:
一种基于特殊基底的LED封装方法,其步骤包括:
1)用硅基材料制作成硅片;
2)通过激光器在硅片上打孔,把打孔后的硅片进行硅片清洗,去除硅片表面和孔内的粉末;
3)在整个硅片上蒸镀铜膜,由于膜的厚度不足还需要电镀铜膜以保证铜膜的导电率;
4)在镀膜后的硅片上图形转换,划出绝缘区并腐蚀出所需的电路图形,将LED芯片在电路上共晶焊接;
5)在芯片上注塑透镜,划片形成单体LED。
实施例2:
根据实施例1所述的基于特殊基底的LED封装方法封装的装置,其组成包括:硅片1,所述的硅片上有开孔3,在所述的硅片蒸镀并电镀铜膜4,腐蚀出需要的电路图形 ,把芯片的正负极共晶焊接到开孔上,在所述的芯片上注塑有硅胶透镜2。
Claims (2)
1.一种基于特殊基底的LED封装方法,其特征是:其步骤包括:
1)用硅基材料制作成硅片;
2)通过激光器在硅片上打孔,把打孔后的硅片进行硅片清洗,去除硅片表面和孔内的粉末;
3)在整个硅片上蒸镀铜膜,由于膜的厚度不足还需要电镀铜膜以保证铜膜的导电率;
4)在镀膜后的硅片上图形转换,划出绝缘区并腐蚀出所需的电路图形,将LED芯片在电路上共晶焊接;
5)在芯片上注塑透镜,划片形成单体LED。
2.一种权利要求1所述的基于特殊基底的LED封装方法封装的装置,其组成包括:硅片,其特征是:所述的硅片上有开孔,在所述的硅片蒸镀并电镀铜膜,腐蚀出需要的电路图形 ,把芯片的正负极共晶焊接到开孔上,在所述的芯片上注塑有硅胶透镜。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109616404A (zh) * | 2018-12-26 | 2019-04-12 | 中芯集成电路(宁波)有限公司 | 用于器件晶圆进行注塑工艺的表面处理方法 |
CN114005917A (zh) * | 2021-10-26 | 2022-02-01 | 中山大学 | 一种用于ZnO基LED器件封装的引线电极工艺 |
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Patent Citations (8)
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KR20060095271A (ko) * | 2005-02-28 | 2006-08-31 | 삼성전기주식회사 | 파장변환형 발광 다이오드 패키지 제조방법 |
CN201904369U (zh) * | 2010-07-30 | 2011-07-20 | 晶科电子(广州)有限公司 | 一种基于硅基板的led表面贴片式封装结构 |
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CN109616404A (zh) * | 2018-12-26 | 2019-04-12 | 中芯集成电路(宁波)有限公司 | 用于器件晶圆进行注塑工艺的表面处理方法 |
CN114005917A (zh) * | 2021-10-26 | 2022-02-01 | 中山大学 | 一种用于ZnO基LED器件封装的引线电极工艺 |
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