CN103700731B - A kind of preparation method of transferable Te-Cd-Hg film - Google Patents
A kind of preparation method of transferable Te-Cd-Hg film Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 51
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000010408 film Substances 0.000 claims abstract description 44
- 230000007062 hydrolysis Effects 0.000 claims abstract description 34
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 34
- 239000003292 glue Substances 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000006303 photolysis reaction Methods 0.000 claims abstract description 22
- 230000007704 transition Effects 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000010792 warming Methods 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000008236 heating water Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 239000012266 salt solution Substances 0.000 claims description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02376—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02411—Tellurides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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Abstract
The present invention relates to a kind of preparation method of transferable Te-Cd-Hg film, metal substrate vapour deposition is obtained graphene layer, the release film that the structural material obtained and surface uniform scribble photodissociation glue makes it be bonded as one by baking of suitably heating, then metal substrate is eroded, remaining " Graphene+photodissociation glue-line+release film " structural material rinsed with deionized water post-drying and use at the bottom of hard transparent high temperature-resistant liner are hydrolyzed together with glue bond, form " transition substrate+hydrolysis glue-line+Graphene+photodissociation glue-line+release film " structural material; Release photodissociation glue, removes release film, obtains " transition substrate+hydrolysis glue-line+Graphene " structural material, laser molecular beam epitaxy deposition mercury cadmium telluride thin film, the release of hydrolysis glue, removes transition substrate, is transferred on target substrate material by " Graphene+mercury cadmium telluride " structural material.The present invention can realize obtaining the crystalline state mercury cadmium telluride thin film on amorphous inorganic substrate and RF magnetron sputtering material.
Description
Technical field
The present invention relates to a kind of preparation method of transferable Te-Cd-Hg film, belong to infrared coating materials technical field.
Background technology
Mercury cadmium telluride is the counterfeit Binary compound semiconductor alloy material of direct band gap material, owing to having, intrinsic carrier concentration is low, electron mobility is high, electronics and hole mobility be than the feature such as large, the absorption coefficient of light is large, thermal emission rate is little, electron effective mass is little, thermal coefficient of expansion and silicon are close, be most widely used material of main part in current Infrared Detectors always, have extremely important application background at military technology and field of space technology.
But the physical features due to its uniqueness is difficult to find the excellent technology of preparing preparing cadmium mercury telluride mono crystalline material always.Current research emphasis is mainly on the preparation research of tellurium cadmium mercury epitaxial film.The backing material of extension then more to be adopted based on the homo-substrate material of CdZnTe, CdTe with GaAs, Al
2o
3, Si is that the crystallinity such as main foreign substrate material are higher, matter measured hard monocrystalline block material.And along with the continuous progress of society and constantly bringing forth new ideas of technology, we there has also been higher demand for development to cadmium-telluride-mercury infrared detector part: large face battle array FPA, reduce costs, large-sized wafer becomes the leading of development at present, also requires instrument miniaturization, lightness simultaneously.And various hard monocrystalline substrate material conventional at present cannot meet these requirements simultaneously, significantly limit the development of mercury cadmium telluride FPA device, the selection of substrate be single, quality requirements is high, the problem such as poor stability has become mercury cadmium telluride thin film quality, key issue that character, performance are improved further.Select amorphous state and flexible material can become one of method addressed these problems as substrate.With regard to current result, the mercury cadmium telluride thin film that amorphous state substrate generates is all amorphous, and its optical property still has obvious difference compared with crystalline state mercury cadmium telluride thin film, also cannot reach the requirement of device.Comparatively speaking, flexible substrate material pliability, manufacturability, reduce costs in have more advantage, but flexible substrate material has a fatal weakness to be exactly non-refractory, generally just easily there is fusing distortion more than 160 DEG C, and the flexible material of the overwhelming majority is all organic amorphous, this brings larger difficulty to the growth of film.
Summary of the invention
In order to overcome the deficiencies in the prior art, the object of this invention is to provide a kind of preparation method of transferable Te-Cd-Hg film, utilize the carrier that Graphene grows as mercury cadmium telluride thin film, prepare graphene-based transferable Te-Cd-Hg film composite material, to realize the extension of crystalline state mercury cadmium telluride thin film in the various target substrate such as monocrystalline, amorphous, metal and flexible material.
The technical scheme that the present invention takes is:
A preparation method for transferable Te-Cd-Hg film, comprises step as follows:
(1) preparation of Graphene
Metal substrate is put into chemical vapor deposition (CVD) system, vapour deposition obtains graphene layer;
(2) prestripping of graphene layer
The release film " metal substrate+Graphene " structural material obtained in (1) step and surface uniform being scribbled photodissociation glue baking of suitably heating makes it be bonded as one, then the corrosive liquid putting into metal substrate soaks and metal substrate is eroded completely, remaining " Graphene+photodissociation glue-line+release film " structural material rinsed with deionized water post-drying is hydrolyzed together with glue bond with transition backing material, forms " transition substrate+hydrolysis glue-line+Graphene+photodissociation glue-line+release film " structural material; Utilize ultraviolet lamp to irradiate, photodissociation glue-line is discharged, remove release film, sodified water solution glue-line, obtains " transition substrate+hydrolysis glue-line+Graphene " structural material simultaneously;
(3) preparation of mercury cadmium telluride thin film
On " transition substrate+hydrolysis glue-line+Graphene " structural material, laser molecular beam epitaxy (LMBE) method deposition mercury cadmium telluride thin film, obtains " transition substrate+hydrolysis glue-line+Graphene+mercury cadmium telluride " structural material;
(4) stripping of Graphene and the transfer of mercury cadmium telluride thin film
By " transition substrate+hydrolysis glue-line+Graphene+mercury cadmium telluride ", structural material is placed in deionized water that hydrolysis glue is discharged, remove transition substrate, afterwards " Graphene+mercury cadmium telluride " structural material is transferred on target substrate material, dry, finally obtain " target substrate+Graphene+mercury cadmium telluride " structural material.
In above-mentioned preparation method, the condition of step (1) chemical vapor deposition is preferred: be evacuated to below 10Pa by airtight for system, pass into H when being then warming up to 300 DEG C
2, continue to be warming up to 1050 DEG C, constant temperature passed into CH after 20 minutes
4, ventilate after 50 minutes and stop passing into CH
4, keep constant temperature after 15 minutes, close H
2, cooling obtains single-layer graphene rapidly afterwards.
Photodissociation glue described in step (2) can produce stickiness, the UV photodissociation glue that glue-line can be made to discharge by Ultraviolet radiation for baking of suitably heating; The corrosive liquid of described metal substrate is the metal salt solution can replacing substrate metal ion, and preferably copper makes metal substrate, FeCl
3solution is corrosive liquid.Hydrolysis glue, for can producing viscosity by Ultraviolet radiation and solidifying, can discharge the hydrolysis water dissolubility UV glue of glue-line by inserting heating water solution; Transition backing material is: hard transparent exotic material, preferably two throwing quartz plate.
Laser molecular beam epitaxy described in step (3) is: adopt laser molecular beam epitaxial device, and 248nm UV excimer high energy pulse laser, as light source, selects Hg
0.8cd
0.2body target made by Te material, be matrix sputtering sedimentation mercury cadmium telluride thin film with " clear hard substrate+hydrolysis glue-line+Graphene " structural material obtained in step (2), energy is 100-150mJ, laser frequency: 2-10Hz, depositing temperature 80-100 DEG C, background pressure range 10 during deposition
-2-10
1pa, sedimentation time 10-120 minute.
Target substrate described in step (4) comprises: the conventional homo-substrate material such as CdZnTe, CdTe; The foreign substrate materials such as Si, Ge, sapphire, quartz; Amorphous, the soft materials such as amorphous glass, organic high molecular polymer, high-temperature heat-resistance adhesive tape.
Compared with prior art, the invention has the advantages that:
(1) in growth mercury cadmium telluride process, do not need mercury cadmium telluride to be grown in different target substrate, while the crystalline quality ensureing mercury cadmium telluride thin film and composition proportion stability, also add flexibility prepared by mercury cadmium telluride thin film;
(2) selection of backing material is more convenient and flexible;
(3) the transfer preparation of the crystalline state mercury cadmium telluride thin film on amorphous, soft backing material is realized.
Accompanying drawing explanation
Fig. 1 does not shift graphene-based structural representation;
Fig. 2 does not shift graphene-based mercury cadmium telluride composite film material structural representation;
Fig. 3 shifts rear graphene-based mercury cadmium telluride composite film material structural representation;
Fig. 4 prepares the method flow diagram of transferable graphene-based mercury cadmium telluride composite film material.
Fig. 5 is (a) graphene-based mercury cadmium telluride composite film material in quartz substrate and the X-ray diffraction spectrum of the graphene-based mercury cadmium telluride composite film material of (b) transfer in high-temperature heat-resistance tape substrate of the embodiment of the present invention 2 preparation, marking "○" in figure is mercury cadmium telluride diffraction maximum, and other diffracted signals are the corresponding diffraction maximum of target substrate.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described, should be appreciated that preferred embodiment described herein is only limitted to interpretation the present invention, be not intended to limit the present invention.Described material all can obtain from open commercial sources if no special instructions.
Embodiment 1
(1) preparation of Graphene
Copper Foil is put into chemical vapor deposition (CVD) system adopting high temperature process furnances and composite molecular pump composition, be evacuated to below 10Pa by airtight for system, start to heat up.H is passed into when being warming up to 300 DEG C
2(flow 50sccm), continue to be warming up to 1050 DEG C, constant temperature passed into CH after 20 minutes
4(flow 50sccm), closedown after 50 minutes of ventilating passes into CH
4, keep constant temperature after 15 minutes, close H
2, cooling obtains single-layer graphene rapidly afterwards.
(2) prestripping of graphene layer
The Graphene obtained in (1) step and surface uniform are scribbled the release film of UV photodissociation glue, to be placed in baking box 80 DEG C, 1 minute, take out, after a period of time, put into FeCl
3soaking at room temperature in solution, until Cu substrate is corroded completely." Graphene+release film " is moved in deionized water solution and moves to after rinsing 30min on Si substrate, treat natural drying, the heating plate being placed in 130 DEG C toasts 30min.Utilize hydrolysis UV glue and quartz substrate to be bonded together " Graphene+photodissociation glue-line+release film " structural material afterwards, suitably extrude, form " quartz plate+hydrolysis glue-line+Graphene+photodissociation glue-line+release film " structural material; Utilize ultraviolet lamp to irradiate sample and be about 30min, light-sensitive emulsion is discharged, removes release film, sodified water solution glue-line, obtains " quartz plate+hydrolysis glue-line+Graphene " structural material simultaneously.
(3) preparation of mercury cadmium telluride thin film
Adopt laser molecular beam epitaxy (LMBE) equipment, 248nm, 150mJ, 5Hz quasi-molecule high energy pulse laser, as sputtering light source, selects Hg
0.8cd
0.2body target made by Te material, deposition growing mercury cadmium telluride thin film on " quartz plate+hydrolysis glue-line+Graphene " structural material obtained in step (2).Depositing temperature 100 DEG C.Background pressure 5Pa during deposition, sedimentation time 120 minutes, obtains " quartz plate+hydrolysis glue-line+Graphene+mercury cadmium telluride " structural material.
(4) stripping of Graphene and the transfer of mercury cadmium telluride thin film
" quartz plate+hydrolysis glue-line+Graphene+mercury cadmium telluride " structural material is placed in 50-70 DEG C of deionized water about 30min, hydrolysis glue is discharged, peel off quartz plate, afterwards " Graphene+mercury cadmium telluride " structural material is transferred on amorphous glass backing material, and be placed on heating, drying on low-temperature heat plate, finally obtain " amorphous glass+Graphene+mercury cadmium telluride " structural material.
Embodiment 2
(1) preparation of Graphene
Copper Foil is put into chemical vapor deposition (CVD) system adopting high temperature process furnances and composite molecular pump composition, be evacuated to below 10Pa by airtight for system, start to heat up.H is passed into when being warming up to 300 DEG C
2(flow 50sccm), continue to be warming up to 1050 DEG C, constant temperature passed into CH after 20 minutes
4(flow 50sccm), closedown after 50 minutes of ventilating passes into CH
4, keep constant temperature after 15 minutes, close H
2, cooling obtains single-layer graphene rapidly afterwards.
(2) prestripping of graphene layer
The Graphene obtained in (1) step and surface uniform are scribbled the release film of UV photodissociation glue, to be placed in baking box 80 DEG C, 1 minute, take out, after a period of time, put into FeCl
3soaking at room temperature in solution, until Cu substrate is corroded completely." Graphene+release film " is moved in deionized water solution and moves to after rinsing 30min on Si substrate, treat natural drying, the heating plate being placed in 130 DEG C toasts 30min.Utilize hydrolysis glue UV and quartz substrate to be bonded together " Graphene+photodissociation glue-line+release film " structural material afterwards, suitably extrude, form " quartz plate+hydrolysis glue-line+Graphene+photodissociation glue-line+release film " structural material; Utilize ultraviolet lamp to irradiate sample and be about 30min, light-sensitive emulsion is discharged, removes release film, sodified water solution glue-line, obtains " quartz plate+hydrolysis glue-line+Graphene " structural material simultaneously.
(3) preparation of mercury cadmium telluride thin film
Adopt laser molecular beam epitaxy (LMBE) equipment, 248nm, 120mJ, 8Hz quasi-molecule high energy pulse laser, as sputtering light source, selects Hg
0.8cd
0.2body target made by Te material, deposition growing mercury cadmium telluride thin film on " quartz plate+hydrolysis glue-line+Graphene " structural material obtained in step (2).Depositing temperature 90 DEG C.Background pressure 5Pa during deposition, sedimentation time 100 minutes, obtains " quartz plate+hydrolysis glue-line+Graphene+mercury cadmium telluride " structural material.
(4) stripping of Graphene and the transfer of mercury cadmium telluride thin film
" quartz plate+hydrolysis glue-line+Graphene+mercury cadmium telluride " structural material is placed in 50-70 DEG C of deionized water about 30min, hydrolysis glue is discharged, peel off quartz plate, afterwards " Graphene+mercury cadmium telluride " structural material is transferred to organic high-temperature heat-resistance adhesive tape, and be placed on heating, drying on low-temperature heat plate, finally obtain " organic high-temperature heat-resistance adhesive tape+Graphene+mercury cadmium telluride " structural material.
Finally should be noted that, the foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, although with reference to previous embodiment to invention has been detailed description, for a person skilled in the art, it still can be modified to the technical scheme described in previous embodiment, or to wherein partly carrying out equivalent replacement.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a preparation method for transferable Te-Cd-Hg film, is characterized in that, comprises step as follows:
(1) metal substrate is put into chemical vapor deposition (CVD) system by the preparation of Graphene, and vapour deposition obtains graphene layer;
(2) release film that " metal substrate+Graphene " structural material obtained in (1) step and surface uniform are scribbled photodissociation glue by the prestripping of graphene layer baking of heating makes it be bonded as one, then the corrosive liquid putting into metal substrate soaks and metal substrate is eroded completely, remaining " Graphene+photodissociation glue-line+release film " structural material rinsed with deionized water post-drying is hydrolyzed together with glue bond with transition backing material, forms " transition substrate+hydrolysis glue-line+Graphene+photodissociation glue-line+release film " structural material; Utilize ultraviolet lamp to irradiate, photodissociation glue-line is discharged, remove release film, sodified water solution glue-line, obtains " transition substrate+hydrolysis glue-line+Graphene " structural material simultaneously;
(3) laser molecular beam epitaxy on " transition substrate+hydrolysis glue-line+Graphene " structural material that is prepared in of mercury cadmium telluride thin film deposits mercury cadmium telluride thin film, obtains " transition substrate+hydrolysis glue-line+Graphene+mercury cadmium telluride " structural material;
(4) structural material is placed in deionized water that hydrolysis glue is discharged by " transition substrate+hydrolysis glue-line+Graphene+mercury cadmium telluride " for the stripping of Graphene and the transfer of mercury cadmium telluride thin film, remove transition substrate, afterwards " Graphene+mercury cadmium telluride " structural material is transferred on target substrate material, dry, finally obtain " target substrate+Graphene+mercury cadmium telluride " structural material.
2. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 1, is characterized in that, the condition of step (1) chemical vapor deposition: be evacuated to below 10Pa by airtight for system, pass into H when being then warming up to 300 DEG C
2, continue to be warming up to 1050 DEG C, constant temperature passed into CH after 20 minutes
4, ventilate after 50 minutes and stop passing into CH
4, keep constant temperature after 15 minutes, close H
2, cooling obtains single-layer graphene rapidly afterwards.
3. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 1, is characterized in that, the corrosive liquid of described metal substrate is the metal salt solution can replacing substrate metal ion.
4. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 3, is characterized in that, selects copper to make metal substrate, FeCl
3solution is corrosive liquid.
5. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 1, is characterized in that, described photodissociation glue is UV photodissociation glue.
6. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 1, is characterized in that, described hydrolysis glue is that UV-irradiation can produce viscosity and solidify, and the UV that can discharge glue-line by inserting heating water solution is hydrolyzed glue.
7. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 1, is characterized in that, described transition backing material is hard refractory non-transparent substrate material.
8. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 7, is characterized in that, the two quartz plate of throwing of choosing is as transition backing material.
9. the preparation method of a kind of transferable Te-Cd-Hg film according to claim 1, it is characterized in that, laser molecular beam epitaxy described in step (3) is: adopt laser molecular beam epitaxial device, 248nm, 150mJ, 5Hz quasi-molecule high energy pulse laser, as sputtering light source, selects Hg
0.8cd
0.2body target made by Te material, with " transition substrate+hydrolysis glue-line+Graphene " structural material obtained in step (2) for matrix deposition, and depositing temperature 100 DEG C, background pressure 5Pa during deposition, sedimentation time 120 minutes.
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| CN108546995B (en) * | 2018-03-13 | 2021-07-06 | 上海大学 | Preparation method for directionally growing tellurium-zinc-cadmium film on graphene substrate |
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