CN103700699A - 一种栅金属结构及其制造方法 - Google Patents

一种栅金属结构及其制造方法 Download PDF

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CN103700699A
CN103700699A CN201310702272.1A CN201310702272A CN103700699A CN 103700699 A CN103700699 A CN 103700699A CN 201310702272 A CN201310702272 A CN 201310702272A CN 103700699 A CN103700699 A CN 103700699A
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copper
substrate
metal structure
barrier layer
metal layer
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201310702272.1A priority Critical patent/CN103700699A/zh
Priority to PCT/CN2014/070178 priority patent/WO2015089921A1/zh
Priority to US14/239,353 priority patent/US9305881B2/en
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Abstract

本发明提供一种栅金属结构及其制造方法，其中栅金属结构包括：衬底和铜金属层；设置在所述衬底与铜金属层之间的阻挡层，所述阻挡层为氮氧化硅SiON或氧化硅SiOx。本发明通过在衬底与铜金属层之间设置SiON或SiOx阻挡层，使得在采用铜作为导电金属层材料时能够提高其电导率和黏附性，并降低铜的扩散性。

Description

一种栅金属结构及其制造方法
技术领域
 本发明涉及图像显示领域，尤其涉及一种栅金属结构及其制造方法。
背景技术
随着平板显示（FPD）技术的发展，人们对显示器分辨率和画面刷新速率的追求越来越高，因此新材料和新工艺的发展也迫在眉睫。目前TFT-LCD领域，导电层金属材料主要以铝和钼为主，铝和钼的优点在于成膜工艺简单，黏附性和平坦性较好，较柔软不容易发生爬坡断线，而且不容易扩散（膜层污染）。对于小尺寸和低分辨率的面板而言，铝是首选的理想导电金属材料。但是，对于大尺寸和高分辨率而言，铝的电阻率相对较大，就不能满足需求了。作为导电金属材料，铜的导电率要远远优于铝，采用铜取代铝作为导电金属材料，其面板分辨率和亮度均可显著提高，同时画面闪烁（flicker）和线负载都能大大降低。
然而，采用铜作为导电金属层材料，其工艺中存在扩散和黏附性问题。为了解决这个问题，如图1所示，通常会在导电金属层（Cu）和衬底（通常为玻璃）间增加一层阻挡层（barrier），阻挡层为氧化铜CuOx，用来阻挡Cu的扩散。如图2所示，如果CuOx层太厚，经高温退火工艺（annealing）后，O原子的扩散会影响到Cu的电导率，因此CuOx需要做得相对较薄。再如图3所示，但薄薄的CuOx层又不足以锚定Cu导电金属层。
发明内容
本发明所要解决的技术问题在于，提供一种栅金属结构及其制造方法，在采用铜作为导电金属层材料时提高其电导率和黏附性，并降低铜的扩散性。
为了解决上述技术问题，本发明提供一种栅金属结构，包括：
衬底和铜金属层；
设置在所述衬底与铜金属层之间的阻挡层，所述阻挡层为氮氧化硅SiON或氧化硅SiOx。
其中，SiON或SiOx通过化学气相沉积工艺在所述衬底与铜金属层之间沉淀而成。
其中，所述衬底为玻璃衬底。
其中，所述阻挡层厚度为50nm~200nm。
其中，所述铜金属层中掺入有稀有金属、过渡元素或高熔点金属，包括镝、钐、钆、钕、镧、钛、铪、铌、锆、锰、钨、钽、钌、铂、镁中的一种或多种。
本发明还提供一种栅金属结构制造方法，包括：
步骤S1，提供衬底和铜金属层；
步骤S2，在所述衬底与铜金属层之间设置阻挡层，所述阻挡层为氮氧化硅SiON或氧化硅SiOx。
其中，所述步骤S2具体是指，采用化学气相沉积工艺将SiON或SiOx沉淀在所述衬底与铜金属层之间。
其中，所述衬底为玻璃衬底。
其中，所述阻挡层厚度为50nm~200nm。
其中，所述步骤S1还包括：
在铜金属层中掺入稀有金属、过渡元素或高熔点金属，具体是掺入镝、钐、钆、钕、镧、钛、铪、铌、锆、锰、钨、钽、钌、铂、镁中的一种或多种。
本发明提供的栅金属结构及其制造方法，通过在衬底与铜金属层之间设置SiON或SiOx阻挡层，使得在采用铜作为导电金属层材料时能够提高其电导率和黏附性，并降低铜的扩散性。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有栅金属结构示意图；
图2是现有栅金属结构在高温退火工艺前后的对比示意图；
图3是现有栅金属结构在高温退火工艺前后的另一对比示意图；
图4是本发明实施例一一种栅金属结构示意图；
图5是图4所示本发明实施例的栅金属结构在经高温退火工艺后的示意图；
图6是本发明实施例二一种栅金属结构制造方法的流程示意图。
具体实施方式
下面参考附图对本发明的优选实施例进行描述。
请参照图4所示，本发明实施例一提供一种栅金属结构，包括：
衬底和铜金属层；
设置在衬底与铜金属层之间的阻挡层，阻挡层为氮氧化硅SiON或氧化硅SiOx。
其中，SiON/SiOx均属于无机非金属绝缘层，通过化学气相沉积（CVD）工艺在衬底与铜金属层之间沉淀而成。衬底优选为玻璃衬底。
本实施例采用SiON或SiOx作为阻挡层，其致密性远远小于衬底（尤其是玻璃）的致密性，而致密性越大越容易发生扩散，因此，基于Cu和SiOx/SiON的界面膜质差异特性，其扩散性大大降低。同时，如图5所示，SiOx/SiON中的氧原子在高温退火工艺中，又与铜金属层的Cu结合成铜-氧键（Cu-O），进而提高Cu和SiOx/SiON之间的黏附性。
对于SiON和SiOx，其区别主要在两个方面：一是致密性，SiON的致密性要优于SiOx；二是氧含量，SiOx的氧含量要多于SiON，氧原子会影响Cu的性能。因此相比较而言，应用到本发明实施例，采用SiON做阻挡层要优于采用SiOx做阻挡层。
为降低在高温退火工艺中氧原子的扩散对铜的电导率的影响，本实施例的阻挡层比较薄，厚度为50nm~200nm。至于铜金属层的厚度则根据电阻要求来决定，而衬底的厚度取决于选择的衬底材料，如果是玻璃衬底，其厚度约为0.5~0.7T。
需要注意的是，如果阻挡层的氧原子量过多，在高温退火工艺中，一方面氧原子的扩散相对会增多，对铜的电导率影响增大；而另一方面大量的氧原子与铜会结合成更多的铜-氧键，能进一步提高铜和阻挡层之间的黏附性。反过来，如果阻挡层的氧原子量相对较少，在高温退火工艺中，氧原子的扩散较少，对铜的电导率影响也较小；但是氧原子与铜结合成的铜-氧键将减少，影响铜和阻挡层之间的黏附性。因此，这是相互制约的两个因素，需要达到一种平衡。就材料而言，本实施例选择SiON或SiOx作为阻挡层，能很好地形成前述平衡，兼顾电导率和黏附性问题。
另外，由于铜在高温制程中容易形成突起，当选择铜作为导电金属层的金属材料时，也需要考虑解决这一问题。本实施例是在铜金属层中掺入一些杂质分子，包括：稀有金属、过渡元素或高熔点金属，例如掺入镝、钐、钆、钕、镧、钛、铪、铌、锆、锰、钨、钽、钌、铂、镁中的一种或多种。当然随着掺杂量的增加，电阻也会随之增加，因此通过选择合适的掺杂量可以平衡突起问题和电阻问题。
请再参照图6所示，相应于本发明实施例一栅金属结构，本发明实施例二供一种栅金属结构制造方法，包括：
步骤S1，提供衬底和铜金属层；
步骤S2，在衬底与铜金属层之间设置阻挡层，阻挡层为氮氧化硅SiON或氧化硅SiOx。
其中，步骤S2具体是指，采用化学气相沉积工艺将SiON或SiOx沉淀在衬底与铜金属层之间。衬底优选为玻璃衬底。
本实施例采用SiON或SiOx作为阻挡层，其致密性远远小于衬底（尤其是玻璃）的致密性，而致密性越大越容易发生扩散，因此，基于Cu和SiOx/SiON的界面膜质差异特性，其扩散性大大降低。同时，如图5所示，SiOx/SiON中的氧原子在高温退火工艺中，又与铜金属层的Cu结合成铜-氧键（Cu-O），进而提高Cu和SiOx/SiON之间的黏附性。
对于SiON和SiOx，其区别主要在两个方面：一是致密性，SiON的致密性要优于SiOx；二是氧含量，SiOx的氧含量要多于SiON，氧原子会影响Cu的性能。因此相比较而言，应用到本发明实施例，采用SiON做阻挡层要优于采用SiOx做阻挡层。
为降低在高温退火工艺中氧原子的扩散对铜的电导率的影响，本实施例的阻挡层比较薄，厚度为50nm~200nm。至于铜金属层的厚度则根据电阻要求来决定，而衬底的厚度取决于选择的衬底材料，如果是玻璃衬底，其厚度约为0.5~0.7T。
另外，由于铜在高温制程中容易形成突起，当选择铜作为导电金属层的金属材料时，也需要考虑解决这一问题。本实施例的步骤S1还包括：
在铜金属层中掺入杂质分子，包括：稀有金属、过渡元素或高熔点金属，具体是掺入镝、钐、钆、钕、镧、钛、铪、铌、锆、锰、钨、钽、钌、铂、镁中的一种或多种。当然随着掺杂量的增加，电阻也会随之增加，因此通过选择合适的掺杂量可以平衡突起问题和电阻问题。
本发明提供的栅金属结构及其制造方法，通过在衬底与铜金属层之间设置SiON或SiOx阻挡层，使得在采用铜作为导电金属层材料时能够提高其电导率和黏附性，并降低铜的扩散性。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (10)

1.一种栅金属结构，其特征在于，包括：衬底和铜金属层；
设置在所述衬底与铜金属层之间的阻挡层，所述阻挡层为氮氧化硅SiON或氧化硅SiOx。
2.根据权利要求1所述的栅金属结构，其特征在于，SiON或SiOx通过化学气相沉积工艺在所述衬底与铜金属层之间沉淀而成。
3.根据权利要求2所述的栅金属结构，其特征在于，所述衬底为玻璃衬底。
4.根据权利要求1所述的栅金属结构，其特征在于，所述阻挡层厚度为50nm~200nm。
5.根据权利要求1所述的栅金属结构，其特征在于，所述铜金属层中掺入有稀有金属、过渡元素或高熔点金属，包括镝、钐、钆、钕、镧、钛、铪、铌、锆、锰、钨、钽、钌、铂、镁中的一种或多种。
6.一种栅金属结构制造方法，包括：步骤S1，提供衬底和铜金属层；
步骤S2，在所述衬底与铜金属层之间设置阻挡层，所述阻挡层为氮氧化硅SiON或氧化硅SiOx。
7.根据权利要求6所述的栅金属结构制造方法，其特征在于，所述步骤S2具体是指，采用化学气相沉积工艺将SiON或SiOx沉淀在所述衬底与铜金属层之间。
8.根据权利要求7所述的栅金属结构制造方法，其特征在于，所述衬底为玻璃衬底。
9.根据权利要求6所述的栅金属结构制造方法，其特征在于，所述阻挡层厚度为50nm~200nm。
10.根据权利要求6所述的栅金属结构制造方法，其特征在于，所述步骤S1还包括：在铜金属层中掺入稀有金属、过渡元素或高熔点金属，具体是掺入镝、钐、钆、钕、镧、钛、铪、铌、锆、锰、钨、钽、钌、铂、镁中的一种或多种。
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