CN103700597A - Preparation method for molded interconnection device - Google Patents
Preparation method for molded interconnection device Download PDFInfo
- Publication number
- CN103700597A CN103700597A CN201310734197.7A CN201310734197A CN103700597A CN 103700597 A CN103700597 A CN 103700597A CN 201310734197 A CN201310734197 A CN 201310734197A CN 103700597 A CN103700597 A CN 103700597A
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- Prior art keywords
- plastic casing
- adopts
- etching
- wire casing
- purge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
Abstract
The invention relates to a preparation method for a molded interconnection device. The method comprises the following steps: injection molding: forming the plastic casing of the molded interconnection device through injection molding; laser etching: drawing a circuit diagram and forming corresponding wire chases on the surface of the plastic casing through laser etching; etching: adopting vacuum plasma equipment to perform plasma etching on dust and pollutants on the surface of the plastic casing; blow washing: adopting blow washing gas to perform blow washing on the dust and pollutants on the surface of the plastic casing; activation: adopting the vacuum plasma equipment to perform plasma activation on the surface of the plastic casing to restore the electroplating performance of the wire chases; metallization: metalizing the wire chases on the activated surface of the plastic casing. According to the method, the dust and external splatter pollutants on the surface of the plastic casing are subjected to plasma etching, blow washing and then activation treatment so as to avoid affecting the metallization procedure and improve the qualification rate of the molded interconnection device; compared with the prior art, the method saves manual labor and improves the work efficiency.
Description
Technical field
The invention belongs to molding interconnection element field, relate to specifically a kind of preparation method of molding interconnection element.
Background technology
The ionized gas shape material that the positron-electron that atom after plasma is deprived of by portions of electronics and atom are ionized rear generation forms, it is extensively present in universe, is often considered to be and removes outside solid, liquid, gas, the 4th state that material exists.
At present, what plasma device was general is two electrodes to be set in airtight container form electric field, with vacuum pump, realize certain vacuum degree, along with gas is more and more thin, the free movement distance of intermolecular distance and molecule or ion is also more and more long, be subject to electric field action, they bump and form gas ions, the activity of these ions is very high, its energy is enough to destroy nearly all chemical bond, material surface in any exposure causes chemical reaction, thereby structure, composition and the group of material surface are changed, and is met the surface of actual requirement.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, on the not impact of the performance of material internal bulk material, is desirable surface modification means.
Electronics manufacturing is more and more pursued miniaturization and the densification of electronic devices and components, because 3D-MID technology can reduce the component number of electronic product, 3D-MID technology is widely used in the fields such as communication, automotive electronics, computer, electromechanical equipment and medicine equipment.3D-MID technology refers on the surface of the plastic casing of injection mo(u)lding, be manufactured with measurements of the chest, waist and hips stereo circuit and the interconnection element of electric function, and traditional PCB can only arrange electronic component on two-dimensional space, 3D-MID reduces the quantity of components and parts and reduces costs by integrating connector, socket or other device.In prior art, the manufacture craft of 3D-MID comprises three key steps: injection mo(u)lding, the processing of laser radium carving and circuit pattern metallization.In above-mentioned manufacture craft, the carving processing of laser radium be when frosting is depicted circuitous pattern also by the ablated surface at light scanning place, make it to present corresponding wire casing on microcosmic, for metallization operation below.But in laser radium carving process, meeting generation dust and outer bespatter are dyed, and can cause coating to come off or short circuit, therefore must be through cleaning before coating.At present be manual operations, increase cost of labor, and efficiency be low.
Therefore, need a kind of preparation method that can improve the molding interconnection element of preparation efficiency badly.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, a kind of preparation method of molding interconnection element is provided.
The technical scheme that realizes the object of the invention is: the preparation method of molding interconnection element, comprises the following steps:
Injection mo(u)lding, adopts injection molding machine injection moulding to form the plastic casing of molding interconnection element;
Laser radium carving, adopts laser radium carving machine to depict circuitous pattern and form corresponding wire casing on the surface of plastic casing;
Etching, adopts vacuum plasma equipment to pass into etching gas the dust of wire casing inside and the pollutant splashing outward outside wire casing after plastic casing surface laser radium carving is carried out to plasma etching;
Purge, adopts purge gas that the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing are carried out to purge outward;
Activation, adopts vacuum plasma equipment to pass into activated gas and the plastic casing surface after purge is carried out plasma-activated, makes the wire casing on plastic casing surface recover to electroplate performance;
Metallization, adopts plater by the wire casing metallization of the plastic casing surface circuit figure after activation.
Further, described plastic casing employing PC plastics and ABS plastic compound material, nylon, PBT plastics, PPS plastics or LCP are injection molded.
Further, described etching gas is the mist of carbon tetrafluoride and oxygen; Described purge gas is compressed air or nitrogen; Described activated gas is oxygen or air.
Further, described metallization adopts the mode of chemical plating or plating.
The present invention has positive effect: the present invention after laser radium carving by the dust of wire casing inside, plastic casing surface with splash pollutant outside wire casing outward and dye and carry out successively plasma etching, purge and plasma-activated, avoiding dust and outer bespatter to dye in metallization operation exerts an influence, improve the qualification rate of molding interconnection element, compared to prior art, save manpower, improved operating efficiency.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation below, wherein:
Fig. 1 is process chart of the present invention.
Embodiment
Embodiment 1
As shown in Figure 1, as the first preferred embodiment, the present embodiment provides a kind of preparation method of molding interconnection element, comprises the following steps:
Injection mo(u)lding, adopts injection molding machine and utilizes PC plastics and the plastic casing of ABS plastic compound material injection moulding formation molding interconnection element;
Laser radium carving, adopts laser radium carving machine to depict circuitous pattern and form corresponding wire casing on the surface of plastic casing;
Etching, the mist that adopts vacuum plasma equipment to pass into carbon tetrafluoride and oxygen carries out plasma etching as etching gas by the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing outward;
Purge, adopts compressed air, as purge gas, the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing are carried out to purge outward;
Activation, adopts vacuum plasma equipment to pass into oxygen and as activated gas, the plastic casing surface after purge is carried out plasma-activatedly, makes the wire casing on plastic casing surface recover to electroplate performance;
Metallization, adopts plater to utilize the mode of chemical plating by the wire casing metallization of the plastic casing surface circuit figure after activation.
In the present embodiment, after laser radium carving, the dust of wire casing inside, plastic casing surface and the pollutant splashing outside wire casing are carried out to plasma etching, purge and plasma-activated successively outward, avoid dust and spatter pollutant outward exerting an influence in metallization operation, improve the qualification rate of molding interconnection element, compared to prior art, save manpower, improved operating efficiency.
Embodiment 2
As the second preferred embodiment, all the other are identical with embodiment 1, and difference is, the present embodiment provides a kind of preparation method of molding interconnection element, comprises the following steps:
Injection mo(u)lding, adopts injection molding machine and utilizes nylon injection-molding to form the plastic casing of molding interconnection element;
Laser radium carving, adopts laser radium carving machine that the surface of plastic casing is depicted to circuitous pattern and formed corresponding wire casing;
Etching, the mist that adopts vacuum plasma equipment to pass into carbon tetrafluoride and oxygen carries out plasma etching as etching gas by the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing outward;
Purge, adopts compressed air, as purge gas, the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing are carried out to purge outward;
Activation, adopts vacuum plasma equipment to pass into oxygen and as activated gas, the plastic casing after purge is carried out plasma-activatedly, makes the wire casing on plastic casing surface recover to electroplate performance;
Metallization, adopts the mode that plater utilization is electroplated that the wire casing of the plastic casing surface circuit figure after activation is metallized.
Embodiment 3
As the 3rd preferred embodiment, all the other are identical with embodiment 1 or 2, and difference is, the present embodiment provides a kind of preparation method of molding interconnection element, comprises the following steps:
Injection mo(u)lding, adopts injection molding machine and utilizes the plastic casing of the plastic injection-moulded formation molding of PBT interconnection element;
Laser radium carving, adopts laser radium carving machine to depict circuitous pattern and form corresponding wire casing on the surface of plastic casing;
Etching, the mist that adopts vacuum plasma equipment to pass into carbon tetrafluoride and oxygen carries out plasma etching as etching gas by the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing outward;
Purge, adopts nitrogen, as purge gas, the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing are carried out to purge outward;
Activation, adopts vacuum plasma equipment to pass into oxygen and as activated gas, the plastic casing after purge is carried out plasma-activatedly, makes the wire casing on plastic casing surface recover to electroplate performance;
Metallization, adopts the mode that plater utilization is electroplated that the wire casing of the plastic casing surface circuit figure after activation is metallized.
Embodiment 4
As the 4th preferred embodiment, all the other are identical with embodiment 1,2 or 3, and difference is, the present embodiment provides a kind of preparation method of molding interconnection element, comprises the following steps:
Step 1, injection mo(u)lding, adopts injection molding machine and utilizes the plastic casing of the plastic injection-moulded formation molding of PPS interconnection element;
Step 2, laser radium carving, adopts laser radium carving machine to depict circuitous pattern and form corresponding wire casing on the surface of plastic casing;
Etching, the mist that adopts vacuum plasma equipment to pass into carbon tetrafluoride and oxygen carries out plasma etching as etching gas by the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing outward;
Purge, adopts nitrogen, as purge gas, the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing are carried out to purge outward;
Activation, adopts vacuum plasma equipment to pass into oxygen and as activated gas, the plastic casing surface after purge is carried out plasma-activatedly, makes the wire casing on plastic casing surface recover to electroplate performance;
Metallization, adopts the mode that plater utilization is electroplated that the wire casing of the plastic casing surface circuit figure after activation is metallized.
Embodiment 5
As the 5th preferred embodiment, all the other are identical with embodiment 1,2,3 or 4, and difference is, the present embodiment provides a kind of preparation method of molding interconnection element, comprises the following steps:
Step 1, injection mo(u)lding, adopts injection molding machine and utilizes LCP injection moulding to form the plastic casing of molding interconnection element;
Step 2, laser radium carving, adopts laser radium carving machine to depict circuitous pattern and form corresponding wire casing on the surface of plastic casing;
Etching, adopts vacuum plasma equipment to pass into carbon tetrafluoride and oxygen and mist, as etching gas, the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outside wire casing is carried out to plasma etching outward;
Purge, adopts nitrogen, as purge gas, the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing are carried out to purge outward;
Activation, adopts vacuum plasma equipment to pass into air and as activated gas, the plastic casing surface after purge is carried out plasma-activatedly, makes the wire casing on plastic casing surface recover to electroplate performance;
Metallization, adopts the mode that plater utilization is electroplated that the wire casing of the plastic casing surface circuit figure after activation is metallized.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (4)
1. the preparation method of molding interconnection element, is characterized in that, comprises the following steps:
Injection mo(u)lding, adopts injection molding machine injection moulding to form the plastic casing of molding interconnection element;
Laser radium carving, adopts laser radium carving machine to depict circuitous pattern and form corresponding wire casing on the surface of plastic casing;
Etching, adopts vacuum plasma equipment to pass into etching gas the dust of the wire casing inside, plastic casing surface after laser radium carving and the pollutant splashing outward outside wire casing is carried out to plasma etching;
Purge, adopts purge gas that the dust of the wire casing inside, plastic casing surface after etching and the pollutant splashing outside wire casing are carried out to purge outward;
Activation, adopts vacuum plasma equipment to pass into activated gas and the plastic casing surface after purge is carried out plasma-activated, makes the wire casing on plastic casing surface recover to electroplate performance;
Metallization, adopts plater by the wire casing metallization of the plastic casing surface circuit figure after activation.
2. the preparation method of molding interconnection element according to claim 1, is characterized in that, described plastic casing employing PC plastics and ABS plastic compound material, nylon, PBT plastics, PPS plastics or LCP are injection molded.
3. the preparation method of molding interconnection element according to claim 1, is characterized in that, described etching gas is the mist of carbon tetrafluoride and oxygen; Described purge gas is compressed air or nitrogen; Described activated gas is oxygen or air.
4. the preparation method of molding interconnection element according to claim 1, is characterized in that, described metallization adopts the mode of chemical plating or plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310734197.7A CN103700597A (en) | 2013-12-27 | 2013-12-27 | Preparation method for molded interconnection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310734197.7A CN103700597A (en) | 2013-12-27 | 2013-12-27 | Preparation method for molded interconnection device |
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| Publication Number | Publication Date |
|---|---|
| CN103700597A true CN103700597A (en) | 2014-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310734197.7A Pending CN103700597A (en) | 2013-12-27 | 2013-12-27 | Preparation method for molded interconnection device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109790361A (en) * | 2016-09-26 | 2019-05-21 | 东丽株式会社 | The manufacturing method of liquid crystalline polyester resin composition, molded product and molded product |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190346A1 (en) * | 2004-03-10 | 2007-08-16 | Matsushita Electric Works, Ltd. | Metal-coated resin molded article and production method therefor |
| CN102171016A (en) * | 2008-10-02 | 2011-08-31 | 大陆-特韦斯贸易合伙股份公司及两合公司 | Method for producing a speed sensor element |
| CN102586764A (en) * | 2011-01-14 | 2012-07-18 | Lpkf激光和电子股份公司 | Method for selectively metallizing a substrate and circuit board produced by this method |
| CN102691066A (en) * | 2012-06-20 | 2012-09-26 | 苏州大学 | Method and device for treating burrs of electrode plate of lithium battery |
| CN103118485A (en) * | 2013-01-25 | 2013-05-22 | 广东生益科技股份有限公司 | Printed circuit board for testing electric-resistant chemical migration performances |
-
2013
- 2013-12-27 CN CN201310734197.7A patent/CN103700597A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190346A1 (en) * | 2004-03-10 | 2007-08-16 | Matsushita Electric Works, Ltd. | Metal-coated resin molded article and production method therefor |
| CN102171016A (en) * | 2008-10-02 | 2011-08-31 | 大陆-特韦斯贸易合伙股份公司及两合公司 | Method for producing a speed sensor element |
| CN102586764A (en) * | 2011-01-14 | 2012-07-18 | Lpkf激光和电子股份公司 | Method for selectively metallizing a substrate and circuit board produced by this method |
| CN102691066A (en) * | 2012-06-20 | 2012-09-26 | 苏州大学 | Method and device for treating burrs of electrode plate of lithium battery |
| CN103118485A (en) * | 2013-01-25 | 2013-05-22 | 广东生益科技股份有限公司 | Printed circuit board for testing electric-resistant chemical migration performances |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109790361A (en) * | 2016-09-26 | 2019-05-21 | 东丽株式会社 | The manufacturing method of liquid crystalline polyester resin composition, molded product and molded product |
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Application publication date: 20140402 |