CN103700591B - Sintering process is adopted to manufacture the method for high-pressure high-power thyristor - Google Patents
Sintering process is adopted to manufacture the method for high-pressure high-power thyristor Download PDFInfo
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- CN103700591B CN103700591B CN201310731526.2A CN201310731526A CN103700591B CN 103700591 B CN103700591 B CN 103700591B CN 201310731526 A CN201310731526 A CN 201310731526A CN 103700591 B CN103700591 B CN 103700591B
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000005245 sintering Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 238000009792 diffusion process Methods 0.000 claims abstract description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 34
- 239000004411 aluminium Substances 0.000 claims abstract description 31
- 238000005488 sandblasting Methods 0.000 claims abstract description 29
- 238000001259 photo etching Methods 0.000 claims abstract description 26
- 239000003292 glue Substances 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052796 boron Inorganic materials 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 17
- 239000011574 phosphorus Substances 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 13
- 241001504664 Crossocheilus latius Species 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 50
- 239000008367 deionised water Substances 0.000 claims description 42
- 229910021641 deionized water Inorganic materials 0.000 claims description 42
- 239000007788 liquid Substances 0.000 claims description 42
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 238000011010 flushing procedure Methods 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- 238000001914 filtration Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- GOZCEKPKECLKNO-RKQHYHRCSA-N Picein Chemical compound C1=CC(C(=O)C)=CC=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 GOZCEKPKECLKNO-RKQHYHRCSA-N 0.000 claims description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000010026 decatizing Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 238000013022 venting Methods 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 6
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 4
- 230000008676 import Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 230000003252 repetitive effect Effects 0.000 description 3
- 239000001993 wax Substances 0.000 description 2
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 1
- 235000013871 bee wax Nutrition 0.000 description 1
- 239000012166 beeswax Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Abstract
The present invention relates to a kind of sintering process that adopts and manufacture the method for high-pressure high-power thyristor, comprise the following steps: process environments preparations, Ultrasonic Cleaning, silicon chip rinsing, clean quartzy frame, quartzy stone roller, the diffusion of silicon chip aluminium, the diffusion of silicon chip boron, oxidation, a photoetching, phosphorus diffusion, cyclotomy, sintering, evaporation, alloy, secondary photoetching, sandblasting angle lap, spin etching Coating glue protect, test package.Compared with prior art, the invention has the beneficial effects as follows: chip manufacturing adopts boron, aluminium twice diffusion, ensure that PN junction forward position is mild; Novel sintered technique guarantee sintering warpage is little, firmly bonding, ensures that diffusion parameter is stablized constant; Adopt ultra-clean process environment, meticulous cleaning method, high-quality cleaning reagent ensures long minority carrier life time; Employing conputer controlled spreads, mechanical angle lap, spray angle, ensures product parameters consistency, uses reliable; Low cost of manufacture, rate of finished products is high, and every technical performance reaches import like product level.
Description
Technical field
The present invention relates to power electric component manufacturing technology field, particularly relate to a kind of method adopting sintering process to manufacture high-pressure high-power thyristor.
Background technology
Thyristor is the abbreviation of thyratron transistor, also known as making silicon controlled rectifier, can work under high voltage, big current condition, and its course of work can control, and is widely used in the electronic circuits such as controlled rectification, AC voltage adjusting, contactless electronic beam switch, inversion and frequency conversion.Thyristor is divided into high-power thyristor, middle power scr and small power thysistor three kinds by current capacity.
In the world high-pressure high-power thyristor particularly more than 3 inches, voltage more than 4000V high-pressure thyristor manufacture in process, substantially the manufacturing technology that total head connects is adopted, current domestic industrial and mining enterprises generally use, be the high-pressure high-power thyristor adopting total head connection technology to produce abroad mostly, a lot of thyristor has arrived the time limit changed.Because domestic manufacturing technology is also immature, be subject to the restriction of process equipment and machining accuracy simultaneously, the total head of domestic production connects high-pressure high-power thyristor from useful life to technical parameter all far away from external product, and from external import high-pressure high-power thyristor, not only delivery cycle is long, and expensive.
Substitute total head with novel sintering process and connect manufacture technics high-pressure high-power thyristor, the deficiency on material, equipment precision is compensate for by technologic advance, special graph is carved on surface, make to open parameter and improve several times than domestic like product, adopt special table top manufacturing technology, ensure the symmetry of the forward and reverse repetitive peak voltage of thyristor, can imported product be replaced completely with the high-pressure high-power thyristor of the method manufacture, low cost of manufacture, has considerable economic worth.
Summary of the invention
The invention provides a kind of adopt novel sintering process to substitute method that total head connects manufacture technics high-pressure high-power thyristor, have low cost of manufacture, product resistance to pressure and the high feature of reliability, can replace similar imported product completely.
In order to achieve the above object, the present invention realizes by the following technical solutions:
Adopt sintering process to manufacture the method for high-pressure high-power thyristor, comprise the following steps:
(1) process environments prepares
By the air double-stage filtering in process environments, the air after filtration is below 10 grades;
(2) Ultrasonic Cleaning
First by silicon chip ultrasonic wave desanding more than 1 hour, hydrofluoric acid Ultrasonic Cleaning more than 1 hour, uses the deionized water rinsing of normal temperature and 70 DEG C respectively, with deionized water Ultrasonic Cleaning more than 2 hours, within every 30 ~ 35 minutes, change a deionized water, then, replace flushing four times with cold and hot deionized water;
(3) silicon chip rinsing
Silicon chip after ultrasonic wave desanding is put into 1# liquid, the proportioning of 1# liquid is ammoniacal liquor: hydrogen peroxide: deionized water=1:2:5, boil on the heaters after 5 ~ 6 minutes and take out, with deionized water rinsing 10 ~ 15 times, change clean 1# liquid to repeat to boil one time, then replace flushing 20 ~ 25 times with cold and hot deionized water; Silicon chip extracting is put into 2# liquid, the proportioning of 2# liquid is hydrochloric acid: hydrogen peroxide: deionized water=1:2:7. boils on the heaters after 5 ~ 6 minutes and takes out, with deionized water rinsing 10 ~ 12 times, change clean 2# liquid to repeat to boil one time, replace each flushing 25 ~ 30 times with cold and hot deionized water again, finally the silicon chip cleaned up is put into 180 DEG C of baking ovens and dry more than 1 hour;
(4) quartzy frame, quartz stone roller is cleaned
By quartzy frame, to put into volume ratio be H to quartz stone roller
2soak 30 ~ 35 minutes in the hydrofluoric acid solution of O:HF=4:1, then, to take out with cold and hot deionized water rinsing each 20 ~ 25 times, put into 180 DEG C of baking ovens and dry more than 1 hour;
(5) silicon chip aluminium diffusion
Aluminum nitrate is dissolved in absolute ethyl alcohol with the ratio of 3g/100ml, make aluminum nitrate solution as aluminium diffuse source, with glue spreader, aluminium source is coated in silicon chip surface, then silicon chip is overlayed on quartzy frame, be put in 1260 DEG C of diffusion furnaces and carry out High temperature diffusion, within 20 ~ 30 hours, close stove later;
(6) silicon chip boron diffusion
Boron oxide is dissolved in absolute ethyl alcohol with the ratio of 10g/100ml, make B solution as boron diffusion source, with glue spreader, boron source is coated in silicon chip surface, then silicon chip is placed on quartzy frame, be put in 1250 DEG C of diffusion furnaces and carry out High temperature diffusion, within 2 ~ 5 hours, close stove later;
(7) be oxidized
Silicon chip after being spread by boron is put in 1150 DEG C of oxidation furnaces and is oxidized, water flowing vapour more than 2 hours, oxygen more than 1 hour each twice, oxygen flow 500ml/ minute, the time to after close stove;
(8) photoetching
By the silicon chip after oxidation, the one side of needle drawing shape is needed to get rid of photoresist, then dry 20 ~ 25 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 ~ 15 minutes in gasoline solution after exposure, in butyl acetate fixing 2 ~ 3 minutes, dry at 140 DEG C of temperature afterwards, and the back side is coated with picein wax, then corrode with photoetching corrosive liquid, oven dry of then removing photoresist;
(9) phosphorus diffusion
The silicon chip good, qualified by photoetching, clean up with 1# liquid, 2# liquid, being put into phosphorus after oven dry expands in stove, treat that furnace temperature is raised to 1200 DEG C of logical phosphorus sources and oxygen-nitrogen protective gas, phosphorus source is closed when furnace temperature is raised to 1250 DEG C, stop heating up, continue logical protective gas, close stove hold one's breath until diffusion furnace cools to less than 1000 DEG C;
(10) cyclotomy
With high speed circle-cutting machine by the partial removal beyond silicon slice pattern;
(11) sinter
The steelframe of cartridge chip is pushed in the flat-temperature zone of vacuum sintering furnace, opens vacuum pump and vacuum pump set, when vacuum reaches 2 × 10
-3during Pa, push sintering furnace, heat 15 ~ 20 minutes under 550 DEG C of constant temperature, then be warmed up to 650 DEG C with the speed of 2 DEG C per minute, heated at constant temperature after 15 ~ 20 minutes, then is cooled to 550 DEG C with the speed of 2 DEG C per minute, take off bell, push away body of heater during Temperature fall to 400 DEG C, when temperature is lower than 200 DEG C, graphite ship is taken out in venting;
(12) evaporate
Chip after sintering is put on the slide holder of evaporator, high-purity aluminium wire is entangled on tungsten filament electrode, covers evaporator cover, be evacuated down to 2 × 10
-3pa, then to tungsten filament electrode heating, makes aluminum evaporation on electrode out, covers chip surface, after being distributed by the aluminium pressure decatizing on tungsten filament, closes evaporation power supply, is taken out by chip after the cooling of machine vaporization chamber, test aluminium more than film thickness 10um;
(13) alloy
In vacuum alloying furnace, at the temperature of 530 DEG C, constant temperature 40 ~ 45 minutes, makes chip surface aluminium and silicon form microalloy;
(14) secondary photoetching
By the chip after alloy, the one side of needle drawing shape is needed to get rid of photoresist, dry 20 ~ 25 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 ~ 15 minutes in 120# gasoline solution after exposure, change fixing 2 ~ 3 minutes of 120# gasoline, dry at 140 DEG C of temperature, again with the corrosion of photoetching corrosive liquid, oven dry of then removing photoresist;
(15) sandblasting, angle lap
By the chip after the photoetching of alloy secondary, be put on the slide glass swivel head of sand-blasting machine, open electric rotating machine button, open sand-blasting machine power supply, blast nozzle and the axial angle of chip are 55 °, nozzle head is to chip edge 2mm position inward, check gas pressure 10MPa, open gas switch, start sandblasting, observe chip edge and expose molybdenum sheet 0.5 ~ 1mm, close sand-blasting machine;
By the chip after sandblasting in angle lap machine, grind the angle of 3 °, make total angle lap hem width reach 5mm;
(16) spin etching, Coating glue protect
Chip after sandblasting angle lap is put in spin etching machine, with chip corrosive liquid corrosion 50 ~ 55 seconds, washes by water 40 ~ 45 seconds, take out afterwards, be put on hot plate and dry, then be put on glue spreader and be coated with protecting glue RTU116;
(17) test, encapsulate
Chip after being protected by spin etching to be put in vacuum drying oven at 180 DEG C of temperature aging 72 hours, test package.Compared with prior art, the invention has the beneficial effects as follows:
1) chip manufacturing adopts boron, aluminium twice diffusion, ensures that PN junction forward position is mild.
2) novel sintered technique guarantee sintering warpage is little, firmly bonding, ensures that diffusion parameter is stablized constant.
3) adopt ultra-clean process environment, meticulous cleaning method, high-quality cleaning reagent ensures long minority carrier life time.
4) adopt conputer controlled diffusion, mechanical angle lap, spray angle, ensure product parameters consistency, use reliable.
5) low cost of manufacture, rate of finished products is high, and every technical performance reaches import like product level.
Accompanying drawing explanation
Fig. 1 is process chart of the present invention.
Fig. 2 is sintering temperature curve figure of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further:
See Fig. 1, be that the present invention adopts sintering process to manufacture the process chart of the method for high-pressure high-power thyristor, comprise following concrete steps:
(1) filtering technique environment
Ultra-clean process environments is the prerequisite manufacturing high-pressure high-power thyristor, falls apart in process at boron aluminum extension, and painting source is crucial, and first by air double-stage filtering, the air after filtration is below 10 grades.
(2) Ultrasonic Cleaning
Meticulous cleaning method is the guarantee manufacturing high-pressure high-power thyristor, and the reagent that whole cleaning process uses is guaranteed reagent.
First by silicon chip ultrasonic wave desanding more than 1 hour, hydrofluoric acid Ultrasonic Cleaning more than 1 hour, uses the deionized water rinsing of normal temperature and 70 DEG C respectively, with deionized water Ultrasonic Cleaning more than 2 hours, within every 30 ~ 35 minutes, change a deionized water, then, replace flushing four times with cold and hot deionized water.
(3) silicon chip rinsing
Silicon chip after ultrasonic wave desanding is put into 1# liquid, the volume ratio of 1# liquid is ammoniacal liquor: hydrogen peroxide: deionized water=1:2:5, boil on the heaters after 5 ~ 6 minutes and use deionized water rinsing 10 ~ 15 times, change clean 1# liquid to repeat to boil one time, finally replace flushing 20 ~ 25 times with cold and hot deionized water; Silicon chip extracting is put into 2# liquid, the volume ratio of 2# liquid is hydrochloric acid: hydrogen peroxide: deionized water=1:2:7. boils 5 ~ 6 minutes on the heaters, then deionized water rinsing is used 10 ~ 12 times, change clean 2# liquid to repeat to boil one time, replace each flushing 25 ~ 30 times with cold and hot deionized water again, finally the silicon chip cleaned up is put into 180 DEG C of baking ovens and dry more than 1 hour.
(4) quartzy frame, quartz stone roller is cleaned
By quartzy frame, to put into volume ratio be H to quartz stone roller
2soak 30 ~ 35 minutes in the hydrofluoric acid solution of O:HF=4:1, then, to take out with cold and hot deionized water rinsing each 20 ~ 25 times, put into 180 DEG C of baking ovens and dry more than 1 hour.
(5) silicon chip aluminium diffusion
Diffusion chip processes is core process process, and the present invention adopts boron aluminium secondary to spread, and reduces PN junction forward position concentration gradient, reduces the electric field strength of PN junction, improves forward and reverse repetitive peak voltage.
Aluminum nitrate is dissolved in absolute ethyl alcohol with the ratio of 3g/100ml, make aluminum nitrate solution as aluminium diffuse source, with glue spreader, aluminium source is coated in silicon chip surface, then silicon chip is overlayed on quartzy frame, be put in 1260 DEG C of diffusion furnaces and carry out High temperature diffusion, within 20 ~ 30 hours, close stove later.
(6) silicon chip boron diffusion
Boron oxide is dissolved in absolute ethyl alcohol with the ratio of 10g/100ml, make B solution as boron diffusion source, with glue spreader, boron source is coated in silicon chip surface, then silicon chip is placed on quartzy frame, be put in 1250 DEG C of diffusion furnaces and carry out High temperature diffusion, within 2 ~ 5 hours, close stove later.
(7) be oxidized
Silicon chip after being spread by boron is put in 1150 DEG C of oxidation furnaces and is oxidized, water flowing vapour more than 2 hours, oxygen more than 1 hour each twice, oxygen flow 500ml/ minute, the time to after close stove.
(8) photoetching
By the silicon chip after oxidation, the one side of needle drawing shape is needed to get rid of photoresist, then dry 20 ~ 25 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 ~ 15 minutes in butyl acetate solution after exposure, fixing 2 ~ 3 minutes in the oil, dry at 140 DEG C of temperature afterwards, and the back side is coated with vacuum beeswax, then corrode with photoetching corrosive liquid, oven dry of then removing photoresist.
(9) phosphorus diffusion
The silicon chip good, qualified by photoetching, cleans up with 1# liquid, 2# liquid, is put into phosphorus and expands in stove after oven dry; treat that furnace temperature is raised to 1200 DEG C of logical phosphorus sources and oxygen-nitrogen protective gas, after 1250 DEG C, close phosphorus source, stop heating up; continue logical protective gas, close stove hold one's breath until diffusion furnace cools to 1000 DEG C.
(10) cyclotomy
With high speed circle-cutting machine by the partial removal beyond silicon slice pattern.
(11) sinter
Sintering process is the critical process process of product formation, sintering process of the present invention adopts computer program controller, the change of control appliance sintering temperature, compared with conventional sintering process control method in the past, precise and stable, consistency is good, can control sintering furnace intensification, constant temperature, cooling well, eliminates the unfavorable factor because heating and cooling inequality causes chip electrical quantity to degenerate.
See Fig. 2, be the sintering temperature curve figure of invention, the steelframe of cartridge chip is pushed in the flat-temperature zone of vacuum sintering furnace, open vacuum pump and vacuum pump set, when vacuum reaches 2 × 10
-3during Pa, push sintering furnace, heat 15 ~ 20 minutes under 550 DEG C of constant temperature, then be warmed up to 650 DEG C with the speed of 2 DEG C per minute, heated at constant temperature after 15 ~ 20 minutes, then is cooled to 550 DEG C with the speed of 2 DEG C per minute, take off bell, push away body of heater during Temperature fall to 400 DEG C, when temperature is lower than 200 DEG C, graphite ship is taken out in venting.
(12) evaporate
Chip after sintering is put on the slide holder of evaporator, high-purity aluminium wire is entangled on tungsten filament electrode, covers evaporator cover, be evacuated down to 2 × 10
-3pa, then to tungsten filament electrode heating, makes aluminum evaporation on electrode out, covers chip surface, after being distributed by the aluminium pressure decatizing on tungsten filament, closes evaporation power supply, is taken out by chip after the cooling of machine vaporization chamber, test aluminium more than film thickness 10um.
(13) alloy
In vacuum alloying furnace, at the temperature of 530 DEG C, constant temperature 40 ~ 45 minutes, makes chip surface aluminium and silicon form microalloy.
(14) secondary photoetching
By the chip after alloy, the one side of needle drawing shape is needed to get rid of photoresist, dry 20 ~ 25 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 ~ 15 minutes in 120# gasoline solution after exposure, change fixing 2 ~ 3 minutes of 120# gasoline, dry at 140 DEG C of temperature, again with the corrosion of photoetching corrosive liquid, oven dry of then removing photoresist.
(15) sandblasting, angle lap
By the chip after the photoetching of alloy secondary, be put on the slide glass swivel head of sand-blasting machine, open electric rotating machine button, open sand-blasting machine power supply, blast nozzle and the axial angle of chip are 55 °, nozzle head is to chip edge 2mm position inward, check gas pressure 10MPa, open gas switch, start sandblasting, observe chip edge and expose molybdenum sheet 0.5 ~ 1mm, close sand-blasting machine.
By the chip after sandblasting in angle lap machine, grind the angle of 3 °, make total angle lap hem width reach 5mm.
(16) spin etching, Coating glue protect
Chip after sandblasting angle lap is put in spin etching machine, with chip corrosive liquid corrosion 50 ~ 55 seconds, washes by water 40 ~ 45 seconds, take out afterwards, be put on hot plate and dry, then be put on glue spreader and be coated with protecting glue RTU116.
(17) test, encapsulate
Chip after being protected by spin etching to be put in vacuum drying oven at 180 DEG C of temperature aging 72 hours, test package.
High-power 3 inches ~ 4 inches, 4000V ~ 6500V high-pressure thyristor that application the present invention manufactures, because sintering temperature is low, reduce the deformation that high temperature produces, make to sinter rear chip characteristics and remain unchanged.For 4 inch chip, through the thyristor that sintering process is made, life-span is all at more than 100us, forward and reverse repetitive peak voltage is all at more than 4000V, off-state and reverse leakage current are less than 150mA pressure drop of on-state crest value at below 2.2V, dynamic DV/DT parameter is greater than 2000V/us, di/dt>200A/ μ s, reaches world's like product advanced enterprises (ABB AB) high-pressure thyristor product standard completely.
The every technical parameter contrast table of product (with ABB thyristor parameter comparison):
Following examples are implemented under premised on technical solution of the present invention, give detailed execution mode and concrete operating process, but protection scope of the present invention are not limited to following embodiment.In following embodiment, method therefor is conventional method if no special instructions.
The technical process that [embodiment 1] application the method for the invention produces 50 high-power 4200V high-pressure thyristors is as follows:
(1) filtering technique environment
By air double-stage filtering, the air after filtration is 10 grades.
(2) Ultrasonic Cleaning
First by silicon chip ultrasonic wave desanding 1 hour, hydrofluoric acid Ultrasonic Cleaning 1 hour, uses the deionized water rinsing of normal temperature and 70 DEG C respectively, with deionized water Ultrasonic Cleaning 2 hours, within every 30 minutes, change a deionized water, then, replace flushing four times with cold and hot deionized water;
(3) silicon chip rinsing
Silicon chip after ultrasonic wave desanding is put into 1# liquid, boils on the heaters after 5 minutes and use deionized water rinsing 10 times, change clean 1# liquid and repeat to boil one time, then replace flushing 20 times with cold and hot deionized water; Put into 2# liquid after taking-up, boil on the heaters after 5 minutes and use deionized water rinsing 10 times, change clean 2# liquid and repeat to boil one time, replace each flushing 30 times with cold and hot deionized water, finally the silicon chip cleaned up is put into 180 DEG C of baking ovens and dry 1 hour;
(4) quartzy frame, quartz stone roller is cleaned
By quartzy frame, to put into volume ratio be H to quartz stone roller
2soak 30 minutes in the hydrofluoric acid solution of O:HF=4:1, then, to take out with cold and hot deionized water rinsing each 20 times, put into 180 DEG C of baking ovens and dry 1 hour;
(5) silicon chip aluminium diffusion
With glue spreader, aluminium source is coated in silicon chip surface, then silicon chip is overlayed on quartzy frame, be put in 1260 DEG C of diffusion furnaces and carry out High temperature diffusion, within 25 hours, close stove later;
(6) silicon chip boron diffusion
With glue spreader, boron source is coated in silicon chip surface, then silicon chip is placed on quartzy frame, be put in 1250 DEG C of diffusion furnaces and carry out High temperature diffusion, within 3 hours, close stove later;
(7) be oxidized
Silicon chip after being spread by boron is put in 1150 DEG C of oxidation furnaces and is oxidized, water flowing vapour 2 hours, oxygen 1 hour each twice, oxygen flow 500ml/ minute, the time to after close stove.
(8) photoetching
The one side of needle drawing shape is needed to get rid of photoresist the silicon chip after oxidation, then dry 20 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 minutes in gasoline solution after exposure, in butyl acetate fixing 2 minutes, dry at 140 DEG C of temperature afterwards, and the back side is coated with picein wax, again with the corrosion of photoetching corrosive liquid, oven dry of then removing photoresist;
(9) phosphorus diffusion
The silicon chip good, qualified by photoetching, cleans up with 1# liquid, 2# liquid, is put into phosphorus and expands in stove after oven dry, treat that furnace temperature is raised to 1200 DEG C of logical phosphorus sources and oxygen-nitrogen protective gas, after 1250 DEG C, close phosphorus source, stop heating up, continue logical protective gas, close stove hold one's breath until diffusion furnace cools to 1000 DEG C;
(10) cyclotomy
With high speed circle-cutting machine by the partial removal beyond silicon slice pattern.
(11) sinter
The steelframe of cartridge chip is pushed in the flat-temperature zone of vacuum sintering furnace, opens vacuum pump and vacuum pump set, when vacuum reaches 2 × 10
-3during Pa, push sintering furnace, heat 20 minutes under 550 DEG C of constant temperature, then be warmed up to 650 DEG C with the speed of 2 DEG C per minute, heated at constant temperature after 20 minutes, then is cooled to 550 DEG C with the speed of 2 DEG C per minute, take off bell, push away body of heater during Temperature fall to 400 DEG C, when temperature is lower than 200 DEG C, graphite ship is taken out in venting.
(12) evaporate
Chip after sintering is put on the slide holder of evaporator, high-purity aluminium wire is entangled on tungsten filament electrode, covers evaporator cover, be evacuated down to 2 × 10
-3pa, then to tungsten filament electrode heating, after being distributed by the aluminium pressure decatizing on tungsten filament, closes evaporation power supply, is taken out by chip after the cooling of machine vaporization chamber, test aluminium more than film thickness 10us;
(13) alloy
In vacuum alloying furnace, at the temperature of 530 DEG C, constant temperature 40 minutes, makes chip surface aluminium and silicon form microalloy;
(14) secondary photoetching
The one side of needle drawing shape is needed to get rid of photoresist the chip after alloy, dry 20 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 minutes in 120# gasoline solution after exposure, change fixing 2 minutes of 120# gasoline, dry at 140 DEG C of temperature, then corrode with photoetching corrosive liquid, oven dry of then removing photoresist;
(15) sandblasting, angle lap
Chip after the photoetching of alloy secondary is put on the slide glass swivel head of sand-blasting machine, open electric rotating machine button, open sand-blasting machine power supply, blast nozzle and the axial angle of chip are 55 °, and nozzle head, to chip edge 2mm position inward, checks gas pressure 10MPa, open gas switch, start sandblasting, observe chip edge and expose molybdenum sheet 1mm, close sand-blasting machine;
By the chip after sandblasting in angle lap machine, grind the angle of 3 °, make total angle lap hem width reach 5mm;
(16) spin etching, Coating glue protect
Chip after sandblasting angle lap is put in spin etching machine, corrodes 50 seconds with chip corrosive liquid, wash by water 40 seconds, take out afterwards, be put on hot plate and dry, then be put on glue spreader and be coated with protecting glue RTU116;
(17) test, encapsulate
Chip after being protected by spin etching to be put in vacuum drying oven at 180 DEG C of temperature aging 72 hours, test package.
The test parameter of this batch of high-power high voltage thyristor is as shown in the table:
Detect more than 4200V finished product 39,3600V ~ 4000V5 sheet, technique to spread in process defective 5, and total rate of finished products reaches 88%.
Claims (1)
1. adopt sintering process to manufacture the method for high-pressure high-power thyristor, it is characterized in that, comprise the following steps:
(1) process environments prepares
By the air double-stage filtering in process environments, the air after filtration is below 10 grades;
(2) Ultrasonic Cleaning
First by silicon chip ultrasonic wave desanding more than 1 hour, hydrofluoric acid Ultrasonic Cleaning more than 1 hour, uses the deionized water rinsing of normal temperature and 70 DEG C respectively, with deionized water Ultrasonic Cleaning more than 2 hours, within every 30 ~ 35 minutes, change a deionized water, then, replace flushing four times with cold and hot deionized water;
(3) silicon chip rinsing
Silicon chip after ultrasonic wave desanding is put into 1# liquid, the volume ratio of 1# liquid is ammoniacal liquor: hydrogen peroxide: deionized water=1:2:5, boil on the heaters after 5 ~ 6 minutes and take out, with deionized water rinsing 10 ~ 15 times, change clean 1# liquid to repeat to boil one time, then replace flushing 20 ~ 25 times with cold and hot deionized water; Silicon chip extracting is put into 2# liquid, the volume ratio of 2# liquid is hydrochloric acid: hydrogen peroxide: deionized water=1:2:7, boil on the heaters after 5 ~ 6 minutes and take out, with deionized water rinsing 10 ~ 12 times, change clean 2# liquid to repeat to boil one time, replace each flushing 25 ~ 30 times with cold and hot deionized water again, finally the silicon chip cleaned up is put into 180 DEG C of baking ovens and dry more than 1 hour;
(4) quartzy frame, quartz stone roller is cleaned
By quartzy frame, to put into volume ratio be H to quartz stone roller
2soak 30 ~ 35 minutes in the hydrofluoric acid solution of O:HF=4:1, then, to take out with cold and hot deionized water rinsing each 20 ~ 25 times, put into 180 DEG C of baking ovens and dry more than 1 hour;
(5) silicon chip aluminium diffusion
Aluminum nitrate is dissolved in absolute ethyl alcohol with the ratio of 3g/100ml, make aluminum nitrate solution as aluminium diffuse source, with glue spreader, aluminium source is coated in silicon chip surface, then silicon chip is overlayed on quartzy frame, be put in 1250 DEG C of diffusion furnaces and carry out High temperature diffusion, within 20 ~ 30 hours, close stove later;
(6) silicon chip boron diffusion
Boron oxide is dissolved in absolute ethyl alcohol with the ratio of 10g/100ml, make B solution as boron diffusion source, with glue spreader, boron source is coated in silicon chip surface, then silicon chip is placed on quartzy frame, be put in 1250 DEG C of diffusion furnaces and carry out High temperature diffusion, within 2 ~ 5 hours, close stove later;
(7) be oxidized
Silicon chip after being spread by boron is put in 1150 DEG C of oxidation furnaces and is oxidized, water flowing vapour more than 2 hours, oxygen more than 1 hour each twice, oxygen flow 500ml/ minute, the time to after close stove;
(8) photoetching
The one side of needle drawing shape is needed to get rid of photoresist the silicon chip after oxidation, then dry 20 ~ 25 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 ~ 15 minutes in 120# gasoline solution after exposure, in butyl acetate fixing 2 ~ 3 minutes, dry at 140 DEG C of temperature afterwards, and the back side is coated with picein wax, again with the corrosion of photoetching corrosive liquid, oven dry of then removing photoresist;
(9) phosphorus diffusion
The silicon chip good, qualified by photoetching, clean up with 1# liquid, 2# liquid, being put into phosphorus after oven dry expands in stove, treat that furnace temperature is raised to 1200 DEG C of logical phosphorus sources and oxygen-nitrogen protective gas, phosphorus source is closed when furnace temperature is raised to 1250 DEG C, stop heating up, continue logical protective gas, close stove hold one's breath until diffusion furnace cools to less than 1000 DEG C;
(10) cyclotomy
With high speed circle-cutting machine by the partial removal beyond silicon slice pattern;
(11) sinter
The steelframe of cartridge chip is pushed in the flat-temperature zone of vacuum sintering furnace, opens vacuum pump and vacuum pump set, when vacuum reaches 2 × 10
-3during Pa, push sintering furnace, heat 15 ~ 20 minutes under 550 DEG C of constant temperature, then be warmed up to 650 DEG C with the speed of 2 DEG C per minute, heated at constant temperature after 15 ~ 20 minutes, then is cooled to 550 DEG C with the speed of 2 DEG C per minute, take off bell, push away body of heater during Temperature fall to 400 DEG C, when temperature is lower than 200 DEG C, graphite ship is taken out in venting;
(12) evaporate
Chip after sintering is put on the slide holder of evaporator, high-purity aluminium wire is entangled on tungsten filament electrode, covers evaporator cover, be evacuated down to 2 × 10
-3pa, then to tungsten filament electrode heating, makes aluminum evaporation on electrode out, covers chip surface, after being distributed by the aluminium pressure decatizing on tungsten filament, closes evaporation power supply, is taken out by chip after the cooling of machine vaporization chamber, test aluminium more than film thickness 10um;
(13) alloy
In vacuum alloying furnace, at the temperature of 530 DEG C, constant temperature 40 ~ 45 minutes, makes chip surface aluminium and silicon form microalloy;
(14) secondary photoetching
The one side of needle drawing shape is needed to get rid of photoresist the chip after alloy, dry 20 ~ 25 minutes at 80 DEG C of temperature, expose under mask aligner after cooling, develop 10 ~ 15 minutes in 120# gasoline solution after exposure, change fixing 2 ~ 3 minutes of 120# gasoline, dry at 140 DEG C of temperature, then corrode with photoetching corrosive liquid, oven dry of then removing photoresist;
(15) sandblasting, angle lap
Chip after the photoetching of alloy secondary is put on the slide glass swivel head of sand-blasting machine, open electric rotating machine button, open sand-blasting machine power supply, blast nozzle and the axial angle of chip are 55 °, and nozzle head, to chip edge 2mm position inward, checks gas pressure 10MPa, open gas switch, start sandblasting, observe chip edge and expose molybdenum sheet 0.5 ~ 1mm, close sand-blasting machine;
By the chip after sandblasting in angle lap machine, grind the angle of 3 °, make total angle lap hem width reach 5mm;
(16) spin etching, Coating glue protect
Chip after sandblasting angle lap is put in spin etching machine, with chip corrosive liquid corrosion 50 ~ 55 seconds, washes by water 40 ~ 45 seconds, take out afterwards, be put on hot plate and dry, then be put on glue spreader and be coated with protecting glue RTV116;
(17) test, encapsulate
Chip after being protected by spin etching to be put in vacuum drying oven at 180 DEG C of temperature aging 72 hours, test package.
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| CN104299901B (en) * | 2014-09-22 | 2017-06-16 | 鞍山市良溪电力科技有限公司 | Open pipe applies the method that source perfect diffusion manufactures low-power consumption snowslide thyristor chip |
| CN104392911B (en) * | 2014-10-31 | 2017-04-12 | 宁波芯科电力半导体有限公司 | Boron diffusion method of high-voltage thyristor chips |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US3947726A (en) * | 1974-12-18 | 1976-03-30 | General Electric Co. | Reverse voltage surge protection for high-voltage thyristors |
| CN101068003A (en) * | 2007-02-13 | 2007-11-07 | 江苏威斯特整流器有限公司 | Method for producing large power bidirectional thyratron transistor |
| CN101752248A (en) * | 2009-12-18 | 2010-06-23 | 浙江四方电子有限公司 | Thyristor core manufacturing process |
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| JPS5735373A (en) * | 1980-08-11 | 1982-02-25 | Mitsubishi Electric Corp | Manufacture of planar type thyristor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3947726A (en) * | 1974-12-18 | 1976-03-30 | General Electric Co. | Reverse voltage surge protection for high-voltage thyristors |
| CN101068003A (en) * | 2007-02-13 | 2007-11-07 | 江苏威斯特整流器有限公司 | Method for producing large power bidirectional thyratron transistor |
| CN101752248A (en) * | 2009-12-18 | 2010-06-23 | 浙江四方电子有限公司 | Thyristor core manufacturing process |
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