CN103681403B - A kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture - Google Patents
A kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture Download PDFInfo
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- CN103681403B CN103681403B CN201310630348.4A CN201310630348A CN103681403B CN 103681403 B CN103681403 B CN 103681403B CN 201310630348 A CN201310630348 A CN 201310630348A CN 103681403 B CN103681403 B CN 103681403B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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Abstract
The present invention relates to semi-conductor test structure and establish field, particularly relate to a kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture, by will the region of upper/lower layer metallic cabling intersection and/or overlap be had to stagger or thicken the thickness of interlayer dielectric layer, to improve inter-metal dielectric breakdown characteristics, and then prevent the region of upper/lower layer metallic line overlap, when carrying out grid oxide layer and puncturing test, this overlapping region is breakdown prior to grid oxide layer, and then causes grid oxide layer is punctured object that test technology cannot reach default assessment grid oxygen reliability performance.
Description
Technical field
The present invention relates to semi-conductor test structure and establish field, particularly relate to a kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture.
Background technology
Puncture in structure design of test at traditional grid oxide layer, juxtaposition part is had between a lot of metal connecting line levels cabling, and due to the filler of metal interlevel be the dielectric layer of low k-value (lowk), thus easily a parasitic capacitance is formed between two metal layers, and there is loose porous and characteristic that is the not resistance to high electric field of intrinsic due to low k-value dielectric, make to puncture in test process doing grid oxide layer, before grid oxide layer is breakdown, the first problem of being worn by mistakenly hit of low k-value dielectric layer of easy generation metal interlevel, make original test structure cannot reach the object of default assessment grid oxygen reliability performance.
At present, existing grid grid oxide layer punctures in test structure, there is a large amount of upper/lower layer metallic cabling infalls, especially connect to also exist between the cabling of gate terminal (gate) with lower metal cabling and intersect or overlapping place, carrying out in gate terminal loading High-Voltage Testing Process, because needs gate terminal applies high pressure, substrate then wants ground connection, is easy to produce the problem that the low-k dielectric layer of metal interlevel is breakdown prior to real test purpose grid oxide layer.
Fig. 1 is the schematic diagram that traditional grid oxide layer punctures test structure, and Fig. 2 is the structural representation of metal wire infall in Fig. 1, and Fig. 3 is the structural representation at the overlapping place of metal wire in Fig. 1; As shown in Figures 1 to 3, a large amount of infalls and overlapping region is there is between upper lower metal layer in Fig. 1, infall 11 is the infall between metal wire M2 and metal wire M1, infall 12,13,14 is the infall between metal wire M2 and metal wire M3, and also there is region overlapping in a large number between metal wire M2 and metal wire M1 and between metal wire M3 and metal wire M2; As shown in Figure 2, at two metal wire infalls, namely there is the region 34 intersected between upper strata metal wire 33 with lower metal line 31, and the dielectric layer 32 in the region 34 of this intersection, owing to being the dielectric of low k-value, the loose and not resistance to high electric field of intrinsic that material compares, and thinner thickness, carry out needing when grid oxide layer punctures test to apply high pressure at this two metal wire, the region 34 of this intersection is just easy to breakdown, thus has influence on the carrying out of test technology; Equally, it is the structural representation of two metal wire overlapping regions shown in Fig. 3, as shown in Figure 3, there is a large amount of overlapping regions 44 in upper strata metal wire 43 and lower metal line 41, and the material being arranged in the dielectric layer 42 of this overlapping region is also the dielectric substance of low k-value, when carrying out grid oxide layer and puncturing test, this overlapping region 44 is also easy to breakdown.
Summary of the invention
For above-mentioned Problems existing, present invention is disclosed a kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture, be applied to grid grid oxide layer and puncture in test technology, wherein, described method comprises:
When carrying out the preparation technology of grid oxygen test structure, the dielectric layer in intersection between two adjacent metal wires and/or overlapping region is thickened;
Adopt the grid oxygen test structure intersecting and/or have in overlapping region the dielectric layer thickened between two adjacent metal wires to carry out grid oxygen and puncture test technology.
The above-mentioned grid oxygen method of testing avoiding line metal interlamination medium layer to puncture, wherein, under not affecting grid oxygen and puncturing the prerequisite of test technology, staggered by described two adjacent metal wires cabling or disconnection is arranged in a metal wire of described intersection and/or overlapping region, to thicken the thickness of the dielectric layer intersected between two metal wires that this is adjacent and/or in overlapping region.
The above-mentioned grid oxygen method of testing avoiding line metal interlamination medium layer to puncture, wherein, described two adjacent metal wires lay respectively to be had in two different structure sheafs of up-down structure.
The above-mentioned grid oxygen method of testing avoiding line metal interlamination medium layer to puncture, wherein, the material of described dielectric layer is low k dielectric material.
In sum, a kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture of the present invention, by will the region of upper/lower layer metallic cabling intersection and/or overlap be had to stagger or thicken the thickness of interlayer dielectric layer, to improve inter-metal dielectric (IMD, inter-Metal-Dielectric) breakdown characteristics, and then prevent the region of upper/lower layer metallic line overlap, when carrying out grid oxide layer and puncturing test, this overlapping region is breakdown prior to grid oxide layer, and then cause grid oxide layer is punctured object that test technology cannot reach default assessment grid oxygen reliability performance.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that traditional grid oxide layer punctures test structure;
Fig. 2 is the structural representation of metal wire infall in Fig. 1;
Fig. 3 is the structural representation at the overlapping place of metal wire in Fig. 1;
Fig. 4 is the structural representation of the grid oxygen method of testing avoiding line metal interlamination medium layer to puncture in one embodiment of the invention;
Fig. 5 is the structural representation that after the grid oxygen method of testing that in Fig. 2, employing avoids line metal interlamination medium layer to puncture, metal wire connects infall;
Fig. 6 is the structural representation that after the grid oxygen method of testing that in Fig. 3, employing avoids line metal interlamination medium layer to puncture, metal wire meets overlapping place;
Wherein, M1, M2, M3 in Fig. 1 and Fig. 6 are metal wire, and AA is active area, and POLY is multi-crystal silicon area (i.e. grid G ATE), PAD is liner, and G is grid, and S/D is source/drain, and B is liner.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described:
Fig. 4 is the structural representation of the grid oxygen method of testing avoiding line metal interlamination medium layer to puncture in one embodiment of the invention, Fig. 5 is the structural representation that after the grid oxygen method of testing that in Fig. 2, employing avoids line metal interlamination medium layer to puncture, metal wire connects infall, and Fig. 6 is the structural representation that after the grid oxygen method of testing that in Fig. 3, employing avoids line metal interlamination medium layer to puncture, metal wire meets overlapping place; As shown in figs. 1 to 6, a kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture, comprising:
First, when carrying out the preparation technology of grid oxygen test structure, to intersect (namely laying respectively at the metal wire had in two different structure sheafs of up-down structure) between traditional two adjacent metal wires and/or dielectric layer in overlapping region thickens; Preferably, can under not affecting grid oxygen and puncturing the prerequisite of test technology, staggered by two adjacent metal wires cabling or disconnection is arranged in a metal wire of intersection and/or overlapping region, to thicken the thickness of the dielectric layer intersected between two metal wires that this is adjacent and/or in overlapping region, and then form the novel grid oxygen test structure (Ainnovativegateoxideintegrityteststructuredesigntoavoidi nter-metallowkdielectricbreakdown) avoiding metal connecting line interlayer low k-value dielectric mistakenly hit to wear.
Secondly, adopt the grid oxygen test structure in above-mentioned intersection between two adjacent metal wires and/or overlapping region with the dielectric layer thickened to carry out grid oxygen and puncture test technology.
As shown in figures 2 and 5, to puncture in test structure at grid oxide layer, adjacent upper/lower layer metallic line (such as Metal1 (M1) and Metal2 (M2) or Metal2 and Metal3 (M3)) has the place of juxtaposition, wherein layer of metal layer to be staggered the process of cabling, there is the region intersected in the upper/lower layer metallic cabling namely in Fig. 2 (being exactly the sectional view of infall 13 in Fig. 1), puncture in test process when carrying out grid oxide layer, a high voltage can be applied in upper metal layers 33, lower metal 31 then wants ground connection, so just be easy to the problem that generation inter-metal dielectric 32 is worn by mistakenly hit, in order to solve this problem, as shown in Figure 5, under the prerequisite not affecting test technology, the application is by having done disconnection process by lower metal 31, remove by lower metal 31 part in intersection region 34, and adopt remaining lower metal 311 to carry out test technology, which adds the thickness of the interlayer dielectric layer between upper strata metal 33 and remaining lower metal 311, and then effectively prevent the problem that inter-metal dielectric mistakenly hit wears.
Further, as shown in figs. 3 and 6, to puncture in test structure at grid oxide layer, as run into the completely overlapping situation (as shown in Figure 3) of upper/lower layer metallic cabling, upper strata metal 43 and lower metal 44 are completely overlapping, dielectric layer 42 in such overlapping region 44 is just thinner, puncture in test process when carrying out grid oxide layer, a high voltage can be applied in upper metal layers 43, lower metal 41 then wants ground connection, so just be easy to the problem that the inter-metal dielectric 42 overlapped in region 44 is worn by mistakenly hit, in order to solve this problem, as shown in Figure 6, under the prerequisite not affecting test technology, the application is by carrying out staggering cabling by lower metal 41 and upper strata metal 43, and its distance L mutually staggered can set according to concrete test technology demand, which adds the thickness of the interlayer dielectric layer between upper strata metal 43 and remaining lower metal 41, and then effectively prevent the problem that inter-metal dielectric mistakenly hit wears.
Shown in Fig. 1 and Fig. 6, in Fig. 1, infall 11 is metal wire M2 and the underlying substrate end metal wire M1 intersection region of gate terminal (the metal wire M2 be namely connected with PADG), then that the metal wire M1 being arranged in lower floor is done disconnection process in infall 11 region in the application, and this disconnection process is on total not impact, because metal wire M1 remainder is still connected, finally be connected to substrate terminal weld pad (PADB), and then form region 21 as shown in Figure 6.
Further, shown in the region of the infall 12 and 13 in Fig. 1, the metal wire M3 of gate terminal has the situation (i.e. infall 12 and 13) of intersecting with the metal wire M2 cabling of source/drain terminal (S/D) and substrate terminal (B), the problem that inter-metal dielectric mistakenly hit is worn will be caused like this, the metal wire M3 of gate terminal then detours after below weld pad and is connected with PADG by the application, the appearance so just effectively avoiding cabling to intersect, and then the situation forming metal wire M3 cabling as shown in Figure 6 is as shown in Figure 6; Wherein, although infall 22 region source/drain terminal M2 and substrate terminal M1 has juxtaposition in Fig. 6, do not affect test because these two ends in test process all by ground connection.
Further, the region of the infall 14 in Fig. 1 is that the metal wire M1 of the metal wire M3 of gate terminal and metal wire M2 & substrate terminal (B) of source/drain terminal (S/D) has crossover phenomenon, but problem is little between metal wire M3 and metal wire M1, because be spaced metal wire M2 and dielectric layers between metal wire M3 and metal wire M1, namely dielectric thickness at its interval is very thick, be difficult to that inter-metal dielectric occurs puncture, but just have inter-metal dielectric breakdown problem between metal wire M3 and metal wire M2, so the metal wire M2 on source/drain terminal (S/D) three limit makes on one side by the application, the effect that can reach connection like this can not have the problem of juxtaposition with the metal wire M3 of gate terminal again, and then the structure formed as shown in Figure 6
In addition, a kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture of the present embodiment, on multiple technology platform such as Logic, HV, can be applicable to >=technique of the multiple technology node such as 130nm, 90nm, 65/55nm, 45/40nm, 32/28nm or≤22nm in.
In sum, owing to have employed technique scheme, the embodiment of the present invention proposes to have the region of upper/lower layer metallic cabling intersection and/or overlap stagger or thicken the thickness of interlayer dielectric layer, to improve inter-metal dielectric (IMD, inter-Metal-Dielectric) breakdown characteristics, and then prevent the region of upper/lower layer metallic line overlap, when carrying out grid oxide layer and puncturing test, this overlapping region is breakdown prior to grid oxide layer, and then causes grid oxide layer is punctured object that test technology cannot reach default assessment grid oxygen reliability performance.
By illustrating and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention proposes existing preferred embodiment, but these contents are not as limitation.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (3)
1. the grid oxygen method of testing avoiding line metal interlamination medium layer to puncture, it is characterized in that, described method comprises:
When carrying out the preparation technology of grid oxygen test structure, the dielectric layer in intersection between two adjacent metal wires and/or overlapping region is thickened;
Adopt the grid oxygen test structure intersecting and/or have in overlapping region the dielectric layer thickened between two adjacent metal wires to carry out grid oxygen and puncture test technology;
Under not affecting grid oxygen and puncturing the prerequisite of test technology, staggered by described two adjacent metal wires cabling or disconnection is arranged in a metal wire of described intersection and/or overlapping region, to thicken the thickness of the dielectric layer intersected between two metal wires that this is adjacent and/or in overlapping region.
2. the grid oxygen method of testing avoiding line metal interlamination medium layer to puncture according to claim 1, is characterized in that, described two adjacent metal wires lay respectively to be had in two different structure sheafs of up-down structure.
3. the grid oxygen method of testing avoiding line metal interlamination medium layer to puncture according to claim 1, is characterized in that, the material of described dielectric layer is low k dielectric material.
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| CN201310630348.4A CN103681403B (en) | 2013-11-29 | 2013-11-29 | A kind of grid oxygen method of testing avoiding line metal interlamination medium layer to puncture |
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| CN103681403B true CN103681403B (en) | 2016-04-27 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759347B1 (en) * | 2003-03-27 | 2004-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of forming in-situ SRO HDP-CVD barrier film |
| CN102097413A (en) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | Structure and method for testing integrity of grid oxide layer and dielectric layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6818936B2 (en) * | 2002-11-05 | 2004-11-16 | Taiwan Semiconductor Manufacturing Company | Scaled EEPROM cell by metal-insulator-metal (MIM) coupling |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6759347B1 (en) * | 2003-03-27 | 2004-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of forming in-situ SRO HDP-CVD barrier film |
| CN102097413A (en) * | 2009-12-15 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | Structure and method for testing integrity of grid oxide layer and dielectric layer |
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