CN103680675A - Conductive paste and use thereof for manufacturing photovoltaic elements - Google Patents
Conductive paste and use thereof for manufacturing photovoltaic elements Download PDFInfo
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- CN103680675A CN103680675A CN201210418039.6A CN201210418039A CN103680675A CN 103680675 A CN103680675 A CN 103680675A CN 201210418039 A CN201210418039 A CN 201210418039A CN 103680675 A CN103680675 A CN 103680675A
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000002245 particle Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 29
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000005245 sintering Methods 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 4
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 claims description 3
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 3
- JCTXKRPTIMZBJT-UHFFFAOYSA-N 2,2,4-trimethylpentane-1,3-diol Chemical compound CC(C)C(O)C(C)(C)CO JCTXKRPTIMZBJT-UHFFFAOYSA-N 0.000 claims description 2
- 150000003378 silver Chemical class 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- -1 billon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A conductive paste includes an organic vehicle, glass particles, and silver particles. In particular, the glass particles of the conductive paste of the present invention are metal glass particles, metal high-content glass particles, Pb-Sn-V-O glass particles, or tellurium powder-containing glass particles.
Description
Technical field
The present invention is about a kind of electrocondution slurry (conductive paste) and for the manufacture of the purposes of photovoltaic element (photovoltaic device), and especially, during about front electrode for the manufacture of photovoltaic element, can form the conductive paste that is beneficial to the micro-structural of wearing tunnel conductivity (tunneling conductivity).
Background technology
Photovoltaic element (photovoltaic device) for example, because it will be from light source (, sunlight) in, handy power conversion becomes electric power, for example to control, and computer, computer, heater ... Deng electronic installation, so photovoltaic element is widely used.Modal photovoltaic element is silica-based solar cell.
Silica-based solar cell refers to the solar cell that utilizes the silicon metal base material made of taking from monocrystalline silicon crystal bar or polycrystalline silicon ingot casting.On silica-based solar cell, form the prior art of electrode, on the first front surface at silica-based solar cell and back of the body surface, utilize after the processing procedure coating metal slurries such as screen painting, sintering procedure need to be carried out twice, the metal electrode with good ohmic contact could be formed.Typical silica-based solar cell, its front surface coating conductive silver paste, its back of the body surface-coated conducting aluminum paste and conductive silver paste (or conductive silver aluminium paste).
Existing burning technology (co-fring) is altogether used in the stroke of the electrode of silica-based solar cell, be total to burning technology and only need to carry out once sintered program, form simultaneously and there is the front electrode of good ohmic contact and bus-bar electrode for welding (bus bar), the backplate of aluminium formation and back side bus-bar electrode for welding.Front electrode comprises the thinner net gate electrode of live width and live width front bus-bar electrode thicker and for welding.Aluminium local diffusion, to the back of the body surface of silica-based solar cell, has formed back of the body surface field (back surface filed, BSF).Back of the body surface field reflection minority carrier the collection that increases most carriers transfer to the backplate that silver or silver-colored aluminium form again, and then promote the overall efficiency of silica-based solar cell.
Referring to Fig. 1, is the fragmentary sectional view of existing silica-based solar cell 1.Fig. 1 only shows Silicon Wafer 10 and utilizes the front electrode 12 that silver is starched on the front surface 102 that is coated on Silicon Wafer 10 and sintering forms.After sintering process, one deck interface glassy layer 14 can be formed between Silicon Wafer 10 and front electrode 12.Obvious ground, interface glassy layer 14 has reduced the conductivity that carrier transfers to front electrode 12.Existing silica-based solar cell 1 utilizes the composition of the silver-colored slurry of change, and the front electrode 12 that allows silver slurry sinter into comprises agglomerate electrode 122 (or silver electrode of title sintering), the silver-colored micro-crystallization (Ag crystallite) 126 at growth interface place between interface glassy layer 14 and Silicon Wafer 10 and/or the Nai meter Yin particulate (nano-Ag colloid) 124 of growing up in interface glassy layer 14.By silver-colored micro-crystallization 126 and/or Nai meter Yin particulate 124, what can promote 10 of front electrode 12 and Silicon Wafers wears tunnel conductivity.
Yet, silver slurry or electrocondution slurry form micro-structural in interface glassy layer kenel through sintering with and cause wear the space that tunnel conductivity is still improved.
Summary of the invention
Therefore, the technical problem that the present invention solves is to provide a kind of electrocondution slurry and for the manufacture of the purposes of photovoltaic element, and electrocondution slurry of the present invention during for the manufacture of the front electrode of photovoltaic element, can form and be beneficial to the micro-structural of wearing tunnel conductivity in interface glassy layer.
A kind of electrocondution slurry of a preferred embodiment of the present invention, comprises organic carrier (organic vehicle), glass particle (glass frit) and silver-colored particle (silver particle).Especially, its glass particle of electrocondution slurry of the present invention is metal glass particle, metal high-load glass particle, Pb-Sn-V-O glass particle or contains tellurium powder glass particle.By this, while allowing electrocondution slurry of the present invention for the manufacture of the front electrode of photovoltaic element, can in interface glassy layer, be formed with and be beneficial to the dendritic metal micro-structural of wearing tunnel conductivity.
In one embodiment, the percentage by weight that organic carrier accounts for electrocondution slurry of the present invention is 1 ~ 10, and the percentage by weight that glass particle accounts for electrocondution slurry of the present invention is 1 ~ 7, and silver-colored particle accounts for the remainder of the percentage by weight of electrocondution slurry of the present invention.
In one embodiment, 2,2 of the solid-state cellulosic polymer that organic carrier comprises 10wt.%, 0 ~ 20wt.%, 4-trimethyl-1,3-pentanediol mono isobutyrate and the terpinol of remainder that accounts for the percentage by weight of organic carrier.
First a kind of method of manufacturing photovoltaic element of a preferred embodiment of the present invention is first to prepare semiconductor structure combination.Semiconductor structure combination comprises at least one p-n junction, and has front surface.Then, method of the present invention is selectively applied and dries electrocondution slurry that the present invention discloses on front surface, to form many first parallel buss on front surface.Then, method of the present invention is selectively applied and dries electrocondution slurry that the present invention discloses on front surface, to form at least one second bus vertical with many first buss on front surface.Finally, method of the present invention is many first buss of sintering and at least one the second buss, to form front electrode on front surface.
In one embodiment, between front electrode and front surface, form interface glassy layer.Front electrode comprises the agglomerate electrode that is formed on interface glassy layer and a plurality of dendritic metal micro-structurals in agglomerate electrode extends to interface glassy layer.
In one embodiment, semiconductor structure combination and comprise anti-reflecting layer.Reflector provides the front surface of semiconductor structure combination.
In one embodiment, semiconductor structure combination and comprise passivation layer.Passivation layer provides the front surface of semiconductor structure combination.
A kind of photovoltaic element of a preferred embodiment of the present invention, it comprises semiconductor structure combination, front electrode and interface glassy layer.Semiconductor structure combination comprises at least one p-n junction, and has front surface.Front electrode is to be formed on front surface.Interface glassy layer is formed between front electrode and front surface.Especially, front electrode comprises the agglomerate electrode that is formed on interface glassy layer and a plurality of dendritic metal micro-structurals in agglomerate electrode extends to interface glassy layer.
In one embodiment, front electrode is to utilize the electrocondution slurry that the present invention discloses to form.
Compare with prior art, electrocondution slurry according to the present invention during for the manufacture of the front electrode of photovoltaic element, can form and be beneficial to the dendritic metal micro-structural of wearing tunnel conductivity in interface glassy layer.
Can be by following detailed Description Of The Invention and appended graphic being further understood about the advantages and spirit of the present invention.
Accompanying drawing explanation
Fig. 1 is the fragmentary sectional view of existing silica-based solar cell.
Fig. 2 is the top view of the photovoltaic element of the method according to this invention manufacturing.
Fig. 3 is the bottom view of the photovoltaic element of the method according to this invention manufacturing.
Fig. 4 A to Fig. 4 D schematically shows according to the manufacture of a preferred embodiment of the present invention as the method for Fig. 2 along the photovoltaic element as shown in the cross section view of A-A line.
Fig. 4 E is the partial enlarged drawing at the interface place of front electrode and passivation layer in Fig. 4 D.Fig. 5 A, Fig. 5 B and Fig. 5 C adopt the electrocondution slurry of this bright announcement for the manufacture of silica-based solar cell, to get the TEM photo of its interface glassy layer place's test piece.
[main element symbol description]
1: photovoltaic element 10: Silicon Wafer
102: front surface 12: front electrode
122: agglomerate electrode 124: Nai meter Yin particulate
126: silver-colored micro-crystallization 14: interface glassy layer
2: photovoltaic element 20: semiconductor structure combination
201: silicon metal base material 202: front surface
204: carry on the back surperficial 206:p-n junction
208: passivation layer 22: front electrode
222: net gate electrode the 222 ': the first bus
224: front bus-bar electrode the 224 ': the second bus
226: agglomerate electrode 228: dendritic metal micro-structural
229: interface glassy layer 24: backplate
24 ': conductive layer 26a, 26b: back side bus-bar electrode
26a ', 26b ': the 3rd bus 28: anti-reflecting layer
Embodiment
A kind of electrocondution slurry of a preferred embodiment of the present invention, comprises organic carrier, glass particle and silver-colored particle.Especially, its glass particle of electrocondution slurry of the present invention is metal glass particle, metal high-load glass particle, Pb-Sn-V-O glass particle or contains tellurium powder glass particle.By this, while allowing electrocondution slurry of the present invention for the manufacture of the front electrode of photovoltaic element, can in interface glassy layer, be formed with and be beneficial to the dendritic metal micro-structural of wearing tunnel conductivity.
In one embodiment, the percentage by weight that organic carrier accounts for electrocondution slurry of the present invention is 1 ~ 10, and the percentage by weight that glass particle accounts for electrocondution slurry of the present invention is 1 ~ 7, and silver-colored particle accounts for the remainder of the percentage by weight of electrocondution slurry of the present invention.
In one embodiment, 2 of the solid-state cellulosic polymer that organic carrier comprises 10wt.% (solid cellulose polymer), 0 ~ 20wt.%, 2,4-trimethyl-1,3-pentanediol mono isobutyrate and the terpinol (Terpineol) of remainder that accounts for the percentage by weight of organic carrier.
Refer to Fig. 2, Fig. 3 and Fig. 4 A to Fig. 4 D, Fig. 2 is the top view of the method according to this invention manufacturing photovoltaic element 2 (for example, silica-based solar cell).Fig. 3 is the bottom view of the method according to this invention manufacturing photovoltaic element 2.Fig. 4 A to Fig. 4 D shows that with cross sectional view a preferred embodiment of method of the present invention manufactures if Fig. 2 is along the photovoltaic element 2 as shown in the cross section view of A-A line.
As shown in Figures 2 and 3, the method according to this invention manufacturing photovoltaic element 2 comprises semiconductor structure combination 20, front electrode 22, backplate 24 and at least one back side bus-bar electrode (26a, 26b).Semiconductor structure combination 20 has front surface 202 and back of the body surface 204.
At least one back side bus-bar electrode (26a, 26b) is formed on this back of the body surface 204 of semiconductor structure combination 20, and welding while connecting for photovoltaic element 1.In case as shown in Figure 3, two parallel back side bus-bar electrodes (26a, 26b) become symmetric arrays, and arrange along Y-direction in Fig. 3.
As shown in Figure 4 A, method of the present invention, first, is preparation semiconductor structure combination 20.Semiconductor structure combination 20 comprises at least one p-n junction 206 and has front surface 202 and back of the body surface 204.The photovoltaic element 2 of the method according to this invention manufacturing is in use procedure, and front surface 202 upward, will be towards the sun.For reducing the reflectivity of incident sunlight, as shown in Figure 4 A, it is good that front surface 202 is processed into rough surface through coarse groove.
Then, as shown in Figure 4 B, method of the present invention is selectively applied and dries electrocondution slurry that the present invention discloses on the front surface 202 of semiconductor structure combination 20, to form many first parallel buss 222 ' on front surface 202.Then, method of the present invention is again selectively applied and dry electrocondution slurry that the present invention discloses on front surface 202, with form at least one with many second buss 224 ' that the first bus 222 ' is vertical.
Be shown in equally Fig. 4 B, method of the present invention is on the back of the body surface 204 of semiconductor structure combination 20, is coated with and dries the first metal slurry, with form conductive layer 24 '.
In one embodiment; the conductive paste that the particle that the first metal slurry can be formed by aluminium, silver, copper, gold, platinum, palladium, aluminium alloy, silver alloy, copper alloy, billon, platinum alloy, palldium alloy or its mixture is mixed into, or other commercial conductive metal slurries.The first metal slurry is that the electrocondution slurry being mixed into by alumina particles is good.
Be shown in equally Fig. 4 B, method of the present invention is on the back of the body surface 204 of semiconductor structure combination 20, selectively applied and dry the second metal slurry, to form at least one parallel the 3rd bus (26a ', 26b ') on back of the body surface 204.
In one embodiment; the conductive paste that the particle that the second metal slurry can be formed by aluminium, silver, copper, gold, platinum, palladium, aluminium alloy, silver alloy, copper alloy, billon, platinum alloy, palldium alloy or its mixture is mixed into, or other commercial conductive metal slurries.The second metal slurry is that the conductive paste being mixed into by silver-colored particle and alumina particles is good.
Finally, as shown in Figure 4 C, method of the present invention is many first buss 222 ' of sintering and at least one the second buss 224 ', to form front electrode 22 on front surface 202.That is to say, front electrode 22 is formed by the first bus 222 through sintering and through the second bus 224 of sintering.The first bus 222 through sintering is the thinner net gate electrode 222 of live width.The second bus 224 through sintering is the thicker front bus-bar electrode 224 of live width.Method of the present invention and sintering conductive layer 24 ', sinter backplate 24 into, and sintering at least one the 3rd bus (26a ', 26b '), sinter at least one back side bus-bar electrode (26a, 26b) into.Front electrode 22 can form respectively by different sintering process from backplate 24, at least one back side bus-bar electrode (26a, 26b), also can form by firing altogether Cheng Yici.
In one embodiment, semiconductor structure combination 20 comprises p-type state silicon metal base material 201, and adulterates to form N-shaped state region in the surperficial planting N-shaped state of p-type state silicon metal base material 201.As shown in Figure 4 A, method of the present invention forms passivation layer 208 and covers this N-shaped state region, and passivation layer 208 provides front surface 202.As shown in Figure 4 D, method of the present invention further forms anti-reflecting layer 28, and anti-reflecting layer 28 covers passivation layer 208.In another specific embodiment, reflector 28 provides front surface 202.
In another specific embodiment, semiconductor structure combination 20 comprises N-shaped state silicon metal base material 201, and adulterates to form p-type state region in the surperficial planting p-type state of N-shaped state silicon metal base material 201.As shown in Figure 4 A, method of the present invention forms passivation layer 208 and covers this p-type state region, and passivation layer 208 provides front surface 202.As shown in Figure 4 D, method of the present invention further forms anti-reflecting layer 28, and anti-reflecting layer 28 covers passivation layer 208.In another specific embodiment, anti-reflecting layer 28 provides front surface 202.
In another specific embodiment, semiconductor structure combination 20 is as U.S. Patent Bulletin number the 5th, its structure of the silicon heterojunction solar cell disclosing for 935, No. 344 (silicon heterojunction solar cell).The structure of silicon heterojunction solar cell please refer to U.S. Patent Bulletin number the 5th, 935, No. 344, does not repeat them here.
Referring to Fig. 4 D and Fig. 4 E, is with cross sectional view, to show the photovoltaic element 2 of a preferred embodiment of the present invention.Fig. 4 E is the partial enlarged drawing at front electrode 22 and the interface place of passivation layer 208 in Fig. 4 D.As shown in Figure 4 E, the electrocondution slurry that the present invention discloses is coated on front surface 202 and after sintering, between front electrode 22 and the front surface 202 of passivation layer 208, forms interface glassy layer 229.Front electrode 22 comprises the agglomerate electrode 226 that is formed on interface glassy layer 22 and a plurality of dendritic metal micro-structurals 228 in agglomerate electrode 226 extends to interface glassy layer 229.
Referring to table 1, is the electrocondution slurry of the announcement according to the present invention and the composition list of electrocondution slurry as a control group.Electrocondution slurry as a control group adopts Si-Pb-B-O glass particle.These electrocondution slurries are for the manufacture of the front electrode of silica-based solar cell (control group, battery A) and sinter front electrode at 780 ℃.These solar cells of making, get the place's test piece of interface glassy layer, utilize transmission electron microscope (TEM) to observe the dendritic metal micro-structural of whether growing up.The backplate of these solar cells is to use commercially available aluminium paste coating, sintering to make, and its back side bus-bar electrode is to use the commercially available coating of silver slurry, sintering to make.
Dendritic metal micro-structural is not observed in the TEM test piece of control group battery.Dendritic metal micro-structural is observed in the TEM test piece of battery A, asks for an interview the TEM photo shown in Fig. 5 A, Fig. 5 B and Fig. 5 C.Label 226 delegation's cube electrodes in Fig. 5 A, Fig. 5 B and Fig. 5 C, label 228 represents dendritic metal micro-structural, label 229 represents dendritic metal micro-structural.Fig. 5 A, Fig. 5 B and Fig. 5 C obviously show that dendritic metal micro-structural 228 is in agglomerate electrode 226 extends to interface glassy layer 229, and the length range of dendritic metal micro-structural 228 is 5 ~ 400nm.In Fig. 5 A, Fig. 5 B and Fig. 5 C, indicate the label of EDX for utilizing the detecting point of TEM internal X-ray energy dissipation analyzer (EDX) detecting composition, at this, do not repeat.
Table 1
By the above detailed description of preferred embodiments, be to wish more know to describe feature of the present invention and spirit, and be not with above-mentioned disclosed preferred embodiment to of the present invention towards being limited.On the contrary, its objective is hope can contain the wish application of being arranged in of various changes and tool equality institute of the present invention the scope of the claims towards interior.Therefore, the scope of the claims that the present invention applies for towards doing the broadest explanation according to above-mentioned explanation, to cause it to contain the arrangement of all possible change and tool equality.
Claims (9)
1. an electrocondution slurry, comprises an organic carrier, a glass particle and a silver medal particle, it is characterized in that: this glass particle is that a metal glass particle, a metal high-load glass particle, a Pb-Sn-V-O glass particle or are containing tellurium powder glass particle.
2. electrocondution slurry as claimed in claim 1,, it is characterized in that: the percentage by weight that this organic carrier accounts for this silver slurry is 1 ~ 10, the percentage by weight that this glass particle accounts for this silver slurry is 1 ~ 7, and this silver particle accounts for the remainder of the percentage by weight of this silver slurry.
3. electrocondution slurry as claimed in claim 1,2 of the solid-state cellulosic polymer that wherein this organic carrier comprises 10wt.%, 0 ~ 20wt.%, 2,4-trimethyl-1,3-pentanediol mono isobutyrate and the terpinol of remainder that accounts for the percentage by weight of this organic carrier.
4. manufacture a method for a photovoltaic element, comprise the following step:
Prepare semiconductor structure combination, this semiconductor structure combination comprises at least one p-n junction and has a front surface;
Selectively applied and dry as claimed any one in claims 1 to 3 electrocondution slurry on this front surface, to form many first parallel buss on this front surface;
Selectively applied and dry this electrocondution slurry on this front surface, to form at least one second bus vertical with these many first buss on this front surface; And
These many first buss of sintering and this at least one the second buss, to form a front electrode on this front surface.
5. method as claimed in claim 4, it is characterized in that: between this front electrode and this front surface, form an interface glassy layer, this front electrode comprise the agglomerate electrode that is formed on this interface glassy layer and certainly this agglomerate electrode extend to a plurality of dendritic metal micro-structurals in this interface glassy layer.
6. method as claimed in claim 5, is characterized in that: this semiconductor structure combination and comprise an anti-reflecting layer, this reflector provides this front surface.
7. method as claimed in claim 5, is characterized in that: semiconductor structure combination and comprise a passivation layer, this passivation layer provides this front surface.
8. a photovoltaic element, comprises:
Semiconductor structure combination, comprises at least one p-n junction and has a front surface;
One front electrode is to be optionally formed on this front surface; And
One interface glassy layer, is formed between this front electrode and this front surface, wherein this front electrode comprise the agglomerate electrode that is formed on this interface glassy layer and certainly this agglomerate electrode extend to a plurality of dendritic metal micro-structurals in this interface glassy layer.
9. photovoltaic element as claimed in claim 8, is characterized in that: this front electrode is to utilize electrocondution slurry as claimed any one in claims 1 to 3 to form.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101133414A TWI525642B (en) | 2012-09-13 | 2012-09-13 | Conductive paste and use thereof in production of photovoltaic device |
| TW101133414 | 2012-09-13 |
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| CN103680675A true CN103680675A (en) | 2014-03-26 |
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| CN201210418039.6A Pending CN103680675A (en) | 2012-09-13 | 2012-10-26 | Conductive paste and use thereof for manufacturing photovoltaic elements |
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| TW (1) | TWI525642B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261323A (en) * | 2020-02-24 | 2020-06-09 | 轻工业部南京电光源材料科学研究所 | Sintered conductive silver paste |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3321973B1 (en) | 2016-11-09 | 2021-01-06 | Meyer Burger (Germany) GmbH | Crystalline solar cell having a transparent, conductive layer between the front contacts and method for manufacturing such a solar cell |
| CN115249750B (en) | 2021-04-26 | 2023-08-11 | 浙江晶科能源有限公司 | Photovoltaic cell, manufacturing method thereof and photovoltaic module |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101785113A (en) * | 2007-08-29 | 2010-07-21 | 费罗公司 | Thick film pastes for fire through applications in solar cells |
| CN101981630A (en) * | 2008-04-09 | 2011-02-23 | E.I.内穆尔杜邦公司 | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| CN102082187A (en) * | 2009-10-28 | 2011-06-01 | 昭荣化学工业株式会社 | Solar cell device and manufacturing method therefor |
| CN102354544A (en) * | 2011-09-21 | 2012-02-15 | 江苏泓源光电科技有限公司 | Silver conductive paste for front electrode of crystalline silicon solar cell and preparation method thereof |
| CN102456428A (en) * | 2010-10-27 | 2012-05-16 | 三星电子株式会社 | Conductive paste and electronic device and solar cell including an electrode formed using the same |
| CN102479568A (en) * | 2010-11-30 | 2012-05-30 | 比亚迪股份有限公司 | Conductive paste for solar cell and preparation method thereof |
-
2012
- 2012-09-13 TW TW101133414A patent/TWI525642B/en not_active IP Right Cessation
- 2012-10-26 CN CN201210418039.6A patent/CN103680675A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101785113A (en) * | 2007-08-29 | 2010-07-21 | 费罗公司 | Thick film pastes for fire through applications in solar cells |
| CN101981630A (en) * | 2008-04-09 | 2011-02-23 | E.I.内穆尔杜邦公司 | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| CN102082187A (en) * | 2009-10-28 | 2011-06-01 | 昭荣化学工业株式会社 | Solar cell device and manufacturing method therefor |
| CN102456428A (en) * | 2010-10-27 | 2012-05-16 | 三星电子株式会社 | Conductive paste and electronic device and solar cell including an electrode formed using the same |
| CN102479568A (en) * | 2010-11-30 | 2012-05-30 | 比亚迪股份有限公司 | Conductive paste for solar cell and preparation method thereof |
| CN102354544A (en) * | 2011-09-21 | 2012-02-15 | 江苏泓源光电科技有限公司 | Silver conductive paste for front electrode of crystalline silicon solar cell and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261323A (en) * | 2020-02-24 | 2020-06-09 | 轻工业部南京电光源材料科学研究所 | Sintered conductive silver paste |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI525642B (en) | 2016-03-11 |
| TW201411658A (en) | 2014-03-16 |
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