CN103677046B - High-precision reference voltage integration sampling circuit - Google Patents
High-precision reference voltage integration sampling circuit Download PDFInfo
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- CN103677046B CN103677046B CN201310612504.4A CN201310612504A CN103677046B CN 103677046 B CN103677046 B CN 103677046B CN 201310612504 A CN201310612504 A CN 201310612504A CN 103677046 B CN103677046 B CN 103677046B
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- 230000010354 integration Effects 0.000 title claims abstract description 12
- 238000005070 sampling Methods 0.000 title claims abstract description 12
- 230000005669 field effect Effects 0.000 claims abstract description 29
- 239000003990 capacitor Substances 0.000 abstract 2
- 238000005286 illumination Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
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Abstract
The invention discloses a high-precision reference voltage integration sampling circuit which comprises a single-pole double-throw switch, a third resistor, a second resistor, an amplifier and a field-effect tube. The output end of the amplifier is connected to the grid of the field-effect tube. The inverted input end of the amplifier is connected to the source of the field-effect tube through a first capacitor. The second resistor is parallelly connected with a second capacitor. One end of the second resistor is connected to the source of the field-effect tube through the third resistor, and the other end thereof is grounded. Two fixed ends of the single-pole double-throw switch are respectively connected with the source of the field-effect tube. The movable end of the single-pole double-throw switch is connected to the inverted input end of the amplifier through a first resistor. The high-precision reference voltage integration sampling circuit has the advantages that the circuit is simple in structure, high in constant current output precision by utilizing the closed-loop control constant current principle, and excellent in linear and load adjustment.
Description
Technical field
The present invention relates to integrated circuit fields, relate to a kind of precision voltage reference integration sampling circuit in particular.
Background technology
In recent years because the environmental protection consciousness in the whole world progressively improves, LED illumination product obtains exploitation energetically, and starts to come into huge numbers of families gradually.In LED illumination product, the LED drive power circuit of AC-DC provides power supply for LED, and due to LED(Light Emitting Diode) be current mode device, luminosity affects comparatively large by electric current, therefore LED drive power needs for LED provides stable steady current to export.Extensively adopt critical current conduction mode (BCM) and cutout control model (DCM) to realize constant current output in current LED illumination power drives to control.In order to realize higher power-efficient, some power drives chips have employed quasi-resonance control model, a kind of control model between BCM and DCM.And also divide the step-down (Buck) of flyback (Flyback) structure and the non-isolation type having isolated form or buck (Buck/Boost) structure etc. according to the topological structure adopted.In the flyback topologies application of middle low-power (<30W), usually have employed again former limit control to eliminate time limit isolation feedback.This according to different current conduction mode and the system topology that adopts, need different control chips to have employed various different constant current algorithm and circuit to realize output constant current.These different algorithms and circuit considerably increase cycle and the complexity of chip research and development, and the open loop constant current algorithm simultaneously had also brings low precision, problem such as difference line regulation and load regulation etc.
Summary of the invention
The invention provides a kind of precision voltage reference integration sampling circuit, its circuit structure is simple, and it utilizes the constant current principle of closed-loop control to make constant current output precision high, line adjustment and load regulation excellence.
For solving above-mentioned technical matters, the present invention by the following technical solutions:
Precision voltage reference integration sampling circuit, it comprises single-pole double-throw switch (SPDT), the 3rd resistance, the second resistance, amplifier and field effect transistor, the output terminal of described amplifier is connected on the grid of field effect transistor, and the inverting input of described amplifier is connected on the source electrode of field effect transistor by the first electric capacity; The second described resistor in parallel has the second electric capacity, and one end is connected to the source electrode of field effect transistor by the 3rd resistance, other end ground connection, two of described single-pole double-throw switch (SPDT) not moved end be connected with the source electrode of field effect transistor with ground respectively, the moved end of described single-pole double-throw switch (SPDT) is connected on the inverting input of amplifier by the first resistance.
Further technical scheme is:
As preferably, the 3rd described resistance and the second resistance are POLY resistance.
Further, the 3rd described resistance and the resistance value ratio of the second resistance are 3.
As preferably, the first described electric capacity is mos capacitance.
As preferably, the voltage of the positive power source terminal of described amplifier is less than the drain voltage of field effect transistor.
As preferably, described single-pole double-throw switch (SPDT) is alternative data selector.
Compared with prior art, the invention has the beneficial effects as follows:
1, circuit structure of the present invention is simple, can save cycle and the complexity of chip research and development.
2, the present invention utilizes the constant current principle of closed-loop control to make constant current output precision high, line adjustment and load regulation excellence.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is circuit diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.Embodiments of the present invention include but not limited to the following example.
[embodiment]
Precision voltage reference integration sampling circuit as shown in Figure 1, it comprises single-pole double-throw switch (SPDT) S1, the 3rd resistance R3, the second resistance R2, amplifier and field effect transistor, the output terminal of described amplifier is connected on the grid of field effect transistor, and the inverting input of described amplifier is connected on the source electrode of field effect transistor by the first electric capacity C1; The second described resistance R2 is parallel with the second electric capacity C2, and one end is connected to the source electrode of field effect transistor by the 3rd resistance R3, other end ground connection, two of described single-pole double-throw switch (SPDT) S1 not moved end be connected with the source electrode of field effect transistor with ground respectively, the moved end of described single-pole double-throw switch (SPDT) S1 is connected on the inverting input of amplifier by the first resistance R1.
For the ease of controlling resistance ratio, the 3rd described resistance R3 and the second resistance R2 is POLY resistance.The deviation of POLY resistance is little, and temperature coefficient can control.
The 3rd described resistance R3 and the resistance value ratio of the second resistance R2 are 3.The common port of the 3rd resistance R3 and the second resistance R2, for exporting Vref, utilizes the voltage divider principle of the 3rd resistance R3 and the second resistance R2 to produce Vref.Namely Vref is 1/4th of the source voltage of field effect transistor.Certainly, it is pointed out that those skilled in the art it should be understood that this ratio also can be other values, ratio is 3 is a preferred value.
In order to further optimize this circuit, the first described electric capacity C1 is mos capacitance.The structure of mos capacitance is simple, low in energy consumption.
In order to economize energy, the voltage of the positive power source terminal of described amplifier is less than the drain voltage of field effect transistor.The voltage of the positive power source terminal of amplifier is different from the magnitude of voltage that the drain voltage of field effect transistor connects, the voltage of the positive power source terminal of amplifier is connected on 2.5V power supply, and the drain voltage of field effect transistor can be connected on 5V or the larger power supply of magnitude of voltage, by connecting different power supplys, energy-conservation object can be reached.
Described single-pole double-throw switch (SPDT) S1 is alternative data selector.
In the present invention, it is integrating circuit that circuit comprises single-pole double-throw switch (SPDT) S1, the 3rd resistance R3, the second resistance R2, the first resistance R1, amplifier, field effect transistor, the first electric capacity C1 and second this circuit of electric capacity C2., in circuit, the normal phase input end of amplifier is connected on Vbg power supply, reg-ctrl controls single-pole double-throw switch (SPDT) S1, controls to make the voltage of the normal phase input end of amplifier and inverting input equal to the dutycycle of single-pole double-throw switch (SPDT) S1.When reg-ctrl is high level, single-pole double-throw switch (SPDT) S1 is connected to the source electrode of field effect transistor, when reg-ctrl is low level, and single-pole double-throw switch (SPDT) S1 ground connection.The control of reg-ctrl to integrating circuit makes the output Vx=Vbg/* ((Ton+Toff)/Ton) of the source electrode of field effect transistor, and Vref is the second resistance R2, the dividing potential drop of the 3rd resistance R3 and the second electric capacity C2 and filtering export Vref=Vbg/4* ((Ton+Toff)/Ton), are constant.
Be embodiments of the invention as mentioned above.The present invention is not limited to above-mentioned embodiment, and anyone should learn the structure change made under enlightenment of the present invention, and every have identical or close technical scheme with the present invention, all falls within protection scope of the present invention.
Claims (4)
1. precision voltage reference integration sampling circuit, it is characterized in that: it comprises single-pole double-throw switch (SPDT) (S1), the 3rd resistance (R3), the second resistance (R2), amplifier and field effect transistor, the output terminal of described amplifier is connected on the grid of field effect transistor, and the inverting input of described amplifier is connected on the source electrode of field effect transistor by the first electric capacity (C1); Described the second resistance (R2) is parallel with the second electric capacity (C2), and one end is connected to the source electrode of field effect transistor by the 3rd resistance (R3), other end ground connection, two of described single-pole double-throw switch (SPDT) (S1) not moved end be connected with the source electrode of field effect transistor with ground respectively, the moved end of described single-pole double-throw switch (SPDT) (S1) is connected on the inverting input of amplifier by the first resistance (R1), the 3rd described resistance (R3) and the second resistance (R2) are POLY resistance, and described the first electric capacity (C1) is mos capacitance.
2. precision voltage reference integration sampling circuit according to claim 1, is characterized in that: the 3rd described resistance (R3) and the resistance value ratio of the second resistance (R2) are 3.
3. precision voltage reference integration sampling circuit according to claim 1, is characterized in that: the voltage of the positive power source terminal of described amplifier is less than the drain voltage of field effect transistor.
4. precision voltage reference integration sampling circuit according to claim 1, is characterized in that: described single-pole double-throw switch (SPDT) (S1) is alternative data selector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310612504.4A CN103677046B (en) | 2013-11-28 | 2013-11-28 | High-precision reference voltage integration sampling circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310612504.4A CN103677046B (en) | 2013-11-28 | 2013-11-28 | High-precision reference voltage integration sampling circuit |
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| Publication Number | Publication Date |
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| CN103677046A CN103677046A (en) | 2014-03-26 |
| CN103677046B true CN103677046B (en) | 2015-07-15 |
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| CN201310612504.4A Active CN103677046B (en) | 2013-11-28 | 2013-11-28 | High-precision reference voltage integration sampling circuit |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005327027A (en) * | 2004-05-13 | 2005-11-24 | Seiko Instruments Inc | Overshoot control circuit for voltage regulator |
| US7719241B2 (en) * | 2006-03-06 | 2010-05-18 | Analog Devices, Inc. | AC-coupled equivalent series resistance |
| CN101183270B (en) * | 2007-11-21 | 2010-06-02 | 北京中星微电子有限公司 | Low pressure difference voltage stabilizer |
| JP5160317B2 (en) * | 2008-06-09 | 2013-03-13 | セイコーインスツル株式会社 | Voltage regulator |
| CN102545608A (en) * | 2010-12-29 | 2012-07-04 | 中国科学院西安光学精密机械研究所 | Constant current source drive circuit and semiconductor refrigerator control system |
| CN203573197U (en) * | 2013-11-28 | 2014-04-30 | 成都岷创科技有限公司 | Reference voltage integral-sampling circuit |
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Effective date of registration: 20160419 Address after: 201204 Zhang Heng road Shanghai, Pudong New Area Zhangjiang hi tech Park Lane 666 No. 2 floor 504-511 room 5 Patentee after: Shanghai Bright Power Semiconductor Co.,Ltd. Address before: West high tech Zone Fucheng Road in Chengdu city of Sichuan province 610000 399 No. 6 Building 1 unit 10 floor No. 2 Patentee before: Chengdu Minchuang Science & Technology Co., Ltd. |
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Address after: 5 room 504-511, room 2, Lane 666, Zhang Heng Road, Pudong New Area, China (Shanghai) free trade zone, Shanghai, China () Patentee after: Shanghai semiconducto Limited by Share Ltd Address before: 201204 Zhang Heng road Shanghai, Pudong New Area Zhangjiang hi tech Park Lane 666 No. 2 floor 504-511 room 5 Patentee before: Shanghai Bright Power Semiconductor Co.,Ltd. |
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