CN103677046A - High-precision reference voltage integration sampling circuit - Google Patents

High-precision reference voltage integration sampling circuit Download PDF

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Publication number
CN103677046A
CN103677046A CN201310612504.4A CN201310612504A CN103677046A CN 103677046 A CN103677046 A CN 103677046A CN 201310612504 A CN201310612504 A CN 201310612504A CN 103677046 A CN103677046 A CN 103677046A
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resistance
amplifier
sampling circuit
effect transistor
field effect
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CN201310612504.4A
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CN103677046B (en
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陈雪松
易坤
高继
赵方麟
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Shanghai semiconducto Limited by Share Ltd
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Chengdu Minchuang Science & Technology Co Ltd
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Abstract

The invention discloses a high-precision reference voltage integration sampling circuit which comprises a single-pole double-throw switch S1, a resistor R3, a resistor R2, an amplifier and a field-effect tube. The output end of the amplifier is connected to the grid of the field-effect tube. The inverted input end of the amplifier is connected to the source of the field-effect tube through a capacitor C1. The resistor R2 is parallelly connected with a capacitor C2. One end of the resistor R2 is connected to the source of the field-effect tube through the resistor R3, and the other end thereof is grounded. Two fixed ends of the single-pole double-throw switch S1 are respectively connected with the source of the field-effect tube. The movable end of the single-pole double-throw switch S1 is connected to the inverted input end of the amplifier through a resistor R1. The high-precision reference voltage integration sampling circuit has the advantages that the circuit is simple in structure, high in constant current output precision by utilizing the closed-loop control constant current principle, and excellent in linear and load adjustment.

Description

Precision voltage reference integration sampling circuit
Technical field
The present invention relates to integrated circuit fields, relate in particular a kind of precision voltage reference integration sampling circuit.
Background technology
Because global environmental protection consciousness progressively improves, LED illuminating product obtains exploitation energetically, and starts to come into gradually huge numbers of families in recent years.In LED illuminating product, the LED driving power circuit of AC-DC provides power supply for LED, and due to LED(Light Emitting Diode) be current mode device, luminosity is subject to current affects larger, so LED driving power need to provide stable steady current output for LED.During current LED mains lighting supply drives, extensively adopting critical current conduction mode (BCM) and cutout control model (DCM) to realize constant current output controls.In order to realize higher power-efficient, some power drives chips have adopted quasi-resonance control model, a kind of control model between BCM and DCM.And also divide and have the step-down of the flyback of isolated form (Flyback) structure and non-isolation type (Buck) or buck (Buck/Boost) structure etc. according to the topological structure adopting.In the flyback topology application of middle low-power (<30W), conventionally adopt again former limit to control and saved inferior limit isolation feedback.This according to different current conduction mode and the system topology adopting, need different control chips to adopt various constant current algorithm and circuit to realize output constant current.The algorithm that these are different and circuit have increased cycle and the complexity of chip research and development greatly, and the open loop constant current algorithm simultaneously having has also brought low precision, the problems such as poor line regulation and load regulation.
Summary of the invention
The invention provides a kind of precision voltage reference integration sampling circuit, its circuit structure is simple, and it utilizes the constant current principle of closed-loop control to make constant current output precision high, and line adjustment and load regulation are excellent.
For solving above-mentioned technical matters, the present invention by the following technical solutions:
Precision voltage reference integration sampling circuit, it comprises single-pole double-throw switch (SPDT) S1, resistance R 3, resistance R 2, amplifier and field effect transistor, the output terminal of described amplifier is connected on the grid of field effect transistor, and the inverting input of described amplifier is connected on the source electrode of field effect transistor by capacitor C 1; In described resistance R 2, be parallel with capacitor C 2, and one end is connected to the source electrode of field effect transistor by resistance R 3, other end ground connection, two of described single-pole double-throw switch (SPDT) S1 not moved end be connected with the source electrode of ground and field effect transistor respectively, the moved end of described single-pole double-throw switch (SPDT) S1 is connected on the inverting input of amplifier by resistance R 1.
Further technical scheme is:
As preferably, described resistance R 3 and resistance R 2 are POLY resistance.
Further, the resistance value ratio of described resistance R 3 and resistance R 2 is 3.
As preferably, described capacitor C 1 is mos capacitance.
As preferably, the voltage of the positive power source terminal of described amplifier is less than the drain voltage of field effect transistor.
As preferably, described single-pole double-throw switch (SPDT) S1 is alternative data selector.
Compared with prior art, the invention has the beneficial effects as follows:
1, circuit structure of the present invention is simple, can save cycle and the complexity of chip research and development.
2, the present invention utilizes the constant current principle of closed-loop control to make constant current output precision high, and line adjustment and load regulation are excellent.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is circuit diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.Embodiments of the present invention include but not limited to the following example.
[embodiment]
Precision voltage reference integration sampling circuit as shown in Figure 1, it comprises single-pole double-throw switch (SPDT) S1, resistance R 3, resistance R 2, amplifier and field effect transistor, the output terminal of described amplifier is connected on the grid of field effect transistor, and the inverting input of described amplifier is connected on the source electrode of field effect transistor by capacitor C 1; In described resistance R 2, be parallel with capacitor C 2, and one end is connected to the source electrode of field effect transistor by resistance R 3, other end ground connection, two of described single-pole double-throw switch (SPDT) S1 not moved end be connected with the source electrode of ground and field effect transistor respectively, the moved end of described single-pole double-throw switch (SPDT) S1 is connected on the inverting input of amplifier by resistance R 1.
For the ease of resistance ratio is controlled, described resistance R 3 and resistance R 2 are POLY resistance.The deviation of POLY resistance is little, and temperature coefficient can be controlled.
Described resistance R 3 and the resistance value ratio of resistance R 2 are 3.The common port of resistance R 3 and resistance R 2 is output Vref, utilizes the voltage divider principle of resistance R 3 and resistance R 2 to produce Vref.Be Vref be field effect transistor source voltage 1/4th.Certainly, it is pointed out that those skilled in the art should be understood that this ratio also can be other values, ratio is 3 preferred value just.
In order further to optimize this circuit, described capacitor C 1 is mos capacitance.Mos capacitance simple in structure, low in energy consumption.
In order to save the energy, the voltage of the positive power source terminal of described amplifier is less than the drain voltage of field effect transistor.The voltage of the positive power source terminal of amplifier is different from the magnitude of voltage that the drain voltage of field effect transistor connects, the voltage of the positive power source terminal of amplifier is connected on 2.5V power supply, and the drain voltage of field effect transistor can be connected on 5V or the larger power supply of magnitude of voltage, by connecting different power supplys, can reach energy-conservation object.
Described single-pole double-throw switch (SPDT) S1 is alternative data selector.
In the present invention, it is integrating circuit that circuit comprises single-pole double-throw switch (SPDT) S1, resistance R 3, resistance R 2, resistance R 1, amplifier, field effect transistor, capacitor C 1 and capacitor C 2. these circuit, in circuit, the normal phase input end of amplifier is connected on Vbg power supply, reg-ctrl controls single-pole double-throw switch (SPDT) S1, and the dutycycle of single-pole double-throw switch (SPDT) S1 is controlled the normal phase input end of amplifier and the voltage of inverting input are equated.When reg-ctrl is high level, single-pole double-throw switch (SPDT) S1 is connected to the source electrode of field effect transistor, when reg-ctrl is low level, and single-pole double-throw switch (SPDT) S1 ground connection.Reg-ctrl makes the output Vx=Vbg/* ((Ton+Toff)/Ton) of the source electrode of field effect transistor to the control of integrating circuit, and Vref is R2, the dividing potential drop of R3 and C2 and filtering output Vref=Vbg/4* ((Ton+Toff)/Ton), be constant.
Be as mentioned above embodiments of the invention.The present invention is not limited to above-mentioned embodiment, and anyone should learn the structural change of making under enlightenment of the present invention, and every have identical or close technical scheme with the present invention, within all falling into protection scope of the present invention.

Claims (6)

1. precision voltage reference integration sampling circuit, it is characterized in that: it comprises single-pole double-throw switch (SPDT) S1, resistance R 3, resistance R 2, amplifier and field effect transistor, the output terminal of described amplifier is connected on the grid of field effect transistor, and the inverting input of described amplifier is connected on the source electrode of field effect transistor by capacitor C 1; In described resistance R 2, be parallel with capacitor C 2, and one end is connected to the source electrode of field effect transistor by resistance R 3, other end ground connection, two of described single-pole double-throw switch (SPDT) S1 not moved end be connected with the source electrode of ground and field effect transistor respectively, the moved end of described single-pole double-throw switch (SPDT) S1 is connected on the inverting input of amplifier by resistance R 1.
2. precision voltage reference integration sampling circuit according to claim 1, is characterized in that: described resistance R 3 and resistance R 2 are POLY resistance.
3. precision voltage reference integration sampling circuit according to claim 1 and 2, is characterized in that: described resistance R 3 and the resistance value ratio of resistance R 2 are 3.
4. precision voltage reference integration sampling circuit according to claim 1, is characterized in that: described capacitor C 1 is mos capacitance.
5. precision voltage reference integration sampling circuit according to claim 1, is characterized in that: the voltage of the positive power source terminal of described amplifier is less than the drain voltage of field effect transistor.
6. precision voltage reference integration sampling circuit according to claim 1, is characterized in that: described single-pole double-throw switch (SPDT) S1 is alternative data selector.
CN201310612504.4A 2013-11-28 2013-11-28 High-precision reference voltage integration sampling circuit Active CN103677046B (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327027A (en) * 2004-05-13 2005-11-24 Seiko Instruments Inc Overshoot control circuit for voltage regulator
CN101183270A (en) * 2007-11-21 2008-05-21 北京中星微电子有限公司 Low pressure difference voltage stabilizer
JP2009295119A (en) * 2008-06-09 2009-12-17 Seiko Instruments Inc Voltage regulator
US7719241B2 (en) * 2006-03-06 2010-05-18 Analog Devices, Inc. AC-coupled equivalent series resistance
CN102545608A (en) * 2010-12-29 2012-07-04 中国科学院西安光学精密机械研究所 Constant current source drive circuit and semiconductor refrigerator control system
CN203573197U (en) * 2013-11-28 2014-04-30 成都岷创科技有限公司 Reference voltage integral-sampling circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327027A (en) * 2004-05-13 2005-11-24 Seiko Instruments Inc Overshoot control circuit for voltage regulator
US7719241B2 (en) * 2006-03-06 2010-05-18 Analog Devices, Inc. AC-coupled equivalent series resistance
CN101183270A (en) * 2007-11-21 2008-05-21 北京中星微电子有限公司 Low pressure difference voltage stabilizer
JP2009295119A (en) * 2008-06-09 2009-12-17 Seiko Instruments Inc Voltage regulator
CN102545608A (en) * 2010-12-29 2012-07-04 中国科学院西安光学精密机械研究所 Constant current source drive circuit and semiconductor refrigerator control system
CN203573197U (en) * 2013-11-28 2014-04-30 成都岷创科技有限公司 Reference voltage integral-sampling circuit

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Effective date of registration: 20160419

Address after: 201204 Zhang Heng road Shanghai, Pudong New Area Zhangjiang hi tech Park Lane 666 No. 2 floor 504-511 room 5

Patentee after: Shanghai Bright Power Semiconductor Co.,Ltd.

Address before: West high tech Zone Fucheng Road in Chengdu city of Sichuan province 610000 399 No. 6 Building 1 unit 10 floor No. 2

Patentee before: Chengdu Minchuang Science & Technology Co., Ltd.

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Address after: 5 room 504-511, room 2, Lane 666, Zhang Heng Road, Pudong New Area, China (Shanghai) free trade zone, Shanghai, China ()

Patentee after: Shanghai semiconducto Limited by Share Ltd

Address before: 201204 Zhang Heng road Shanghai, Pudong New Area Zhangjiang hi tech Park Lane 666 No. 2 floor 504-511 room 5

Patentee before: Shanghai Bright Power Semiconductor Co.,Ltd.