CN103676501A - Method for treating substrate - Google Patents
Method for treating substrate Download PDFInfo
- Publication number
- CN103676501A CN103676501A CN201310362359.9A CN201310362359A CN103676501A CN 103676501 A CN103676501 A CN 103676501A CN 201310362359 A CN201310362359 A CN 201310362359A CN 103676501 A CN103676501 A CN 103676501A
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- China
- Prior art keywords
- reacting gas
- temperature
- epidermal area
- processing method
- substrate processing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention discloses a semiconductor manufacturing method for removing photoresist patterns on a substrate, which comprises a first skin layer removal step, a second skin layer removal step and a photoresist pattern removal step. The first skin layer removal step comprises the operations of feeding a first reactive gas and a second reactive gas into a chamber, removing the first skin layer on photoresist patterns at a first temperature higher than room temperature, removing a second skin layer and feeding any one out of the first and second reactive gases into the chamber. The second skin layer removal step comprises the operation of removing the second skin layer on photoresist patterns at a second temperature higher than the first temperature. The photoresist pattern removal step comprises the operations of continuously feeding the second reactive gas into the chamber, and removing the photoresist patterns from the substrate at a third temperature higher than the second temperature.
Description
Technical field
The present invention relates to method for making semiconductor, relate in particular to a kind of substrate processing method using same of removing the photoresist pattern on substrate.
Background technology
Generally speaking, semiconductor element can be manufactured by the unit processing procedure of lithographic process, etch process, deposition manufacture process and/or ion implantation process.Lithographic process is the processing procedure that forms photoresist pattern on substrate.Photoresist pattern can be as the mask pattern that substrate is exposed selectively.Photoresist pattern can utilize such as the substrate processing method using same of ashing and remove after ion implantation process or etch process.
But, in ion implantation process, on photoresist pattern, can cause than the etch process accessory substance of volume more.For example, on photoresist pattern, cause conductive impurities layer or silicon oxide film.But actual conditions are to utilize substrate processing method using same to be in the past difficult to from photoresist pattern, conductive impurities layer or silicon oxide film be removed clean.
Summary of the invention
[technical task that will solve]
The technical task that the present invention will realize is to provide a kind of can remove conductive impurities layer on photoresist pattern or the substrate processing method using same of silicon oxide film reliably.
[solving the technological means of problem]
The substrate processing method using same of the embodiment of the present invention, as the method for removing the photoresist pattern on substrate, the method comprises: the first epidermal area is removed step, in chamber, provide the first reacting gas and the second reacting gas, at first temperature higher than normal temperature, remove the first epidermal area on this photoresist pattern; The second epidermal area is removed step, and any one in this first reacting gas or this second reacting gas provided to this chamber, at than the second high temperature of this first temperature, removes the second epidermal area on this photoresist pattern; And photoresist pattern removes step, continue in this chamber for should the second reacting gas, and at the 3rd more than the second temperature temperature, from this substrate, remove this photoresist pattern at this.
According to one embodiment of the invention, the first epidermal area is removed step and can be comprised: accessory substance forms step, at the temperature of not enough this first temperature, this first reacting gas and this second reacting gas are reacted with this first epidermal area, on this second epidermal area, form accessory substance; And accessory substance sublimation step, by this base plate heating to the first temperature, make this accessory substance distillation.This first temperature can be 80 degree.This first epidermal area can comprise silicon oxide film.
According to another embodiment of the present invention, this second temperature can be 80 degree Celsius to 140 degree Celsius.
According to one embodiment of the invention, the 3rd temperature can be 140 degree Celsius.
According to another embodiment of the present invention, this first reacting gas can comprise hydrofluorite, Nitrogen trifluoride or sulfur hexafluoride.
According to one embodiment of the invention, this second reacting gas can comprise hydrogen or ammonia.
According to another embodiment of the present invention, this first epidermal area is removed step and can in this chamber, be provided the nitrogen mixing with this first reacting gas.
According to one embodiment of the invention, this second epidermal area is removed step can provide the oxygen mixing with this second reacting gas.
[invention effect]
According to embodiments of the invention, can, at first temperature higher than normal temperature, utilize the first reacting gas of fluorine composition to remove the first epidermal area on substrate; At second temperature higher than the first temperature, utilize the second reacting gas of ammonia or hydrogen to remove the second epidermal area under this first epidermal area; At three temperature higher than the second temperature, utilize this second reacting gas to remove the photoresist pattern under the second epidermal area.The first epidermal area can comprise silicon oxide film.The fluorine composition of the first reacting gas can make the silicon oxide film of the first epidermal area remove with the selection ratio higher than substrate, the second epidermal area and photoresist pattern.Afterwards, the second epidermal area and photoresist pattern can be removed neatly by the second reacting gas from substrate.
Therefore, the substrate processing method using same of the embodiment of the present invention can be removed silicon oxide film reliably.
Accompanying drawing explanation
Fig. 1 illustrates for the figure of the substrate board treatment of substrate processing method using same of the present invention is described.
Fig. 2 is the process flow diagram that the substrate processing method using same of the embodiment of the present invention is shown.
Fig. 3 to Fig. 7 is the processing procedure sectional view that photoresist pattern, the second epidermal area and the first epidermal area removed according to the substrate processing method using same of Fig. 2 are shown.
Fig. 8 and Fig. 9 are for roughly illustrating the figure of the base plate processing system of cluster type.
100 treatment chamber
110 well heaters
112 substrates
114 photoresist patterns
116 second epidermal areas
117 byproduct layer
118 first epidermal areas
120 lifter pins
130 baffle plates
131 upper areas
132 activating areas
133 lower areas
134 conversion zones
140 vacuum pumps
150 first treatment chamber
160 second treatment chamber
200 gas supply departments
210 gas supply departments
220 first reacting gas supply departments
230 second reacting gas supply departments
240 valves
300 control parts
400 base plate transfer modules
410 wafer transfer boxes
500 load protection chambers
600 transfer chamber
610 mechanical arms
S100 step
S200 step
S300 step
S400 step
S500 step
S600 step
Embodiment
Embodiments of the invention more completely illustrate and provide the present invention for the operator to have common knowledge in this area, and following examples can be deformed into multiple different shape, and scope of the present invention is not defined in following examples.On the contrary, these embodiment make the disclosure more substantial, complete, in order intactly to transmit thought of the present invention to those skilled in the art and to be provided.In addition, in accompanying drawing, the thickness of each layer or size are given an exaggerated account for the convenience that illustrates and definition.
In instructions in the whole text, when mentioning such as composed component of region, radius, distance etc. and other composed components so that " continuously ", " connection " or " connection ", form existed, can be interpreted as, this composed component directly with contact other composed components " continuously ", " connection " or " connection ", or existence is between the other composed component between it.On the contrary, when mentioning a composed component with other composed components " directly continuous ", " being directly connected " or " directly connecting ", be interpreted as not existing other composed components between between it.Identical symbol is indicated identical element.As used in this manual, term "and/or" comprises any one and all combinations more than one in the corresponding project of enumerating.
In this manual, first, second term such as grade is for illustrating various member, accessory, region, area etc., but these members, accessory, region, area are obviously not limited by these terms.These terms are only for being different from other regions, layer or area by a member, accessory, region, layer or part.Therefore, below by above-mentioned the first member, accessory, region, area, in the situation that not exceeding indication of the present invention, can indicate second component, accessory, region, area.
In addition, such as the relativity term of " adjacent " or " adjacency " as illustrated in accompanying drawing, can be for describing the relation with respect to other elements of certain element at this.Relativity term can be understood as, and on the basis of the direction of describing in the accompanying drawings, further comprises other directions of element.If element is towards other directions (with respect to other direction rotation 90 degree), the relativity explanation of using in this manual can make an explanation according to this.
The term using in this instructions is for specific embodiment is described, but not for limiting the present invention.The same as used in this specification, as long as do not explicitly point out in statement, odd number form also can comprise plural form.In addition, " the comprising (comprises/comprising) " of using in this instructions, be the existence of determining especially shape, numeral, step, action, member, element and/or its group mentioned, do not get rid of the existence of more than one other shapes, numeral, action, member, element and/or its group or add.
Accompanying drawing below with reference to roughly illustrating desirable embodiment of the present invention, illustrates embodiments of the invention.In the accompanying drawings, for example, according to manufacturing technology and/or tolerance (tolerance), measurable illustrated shape distortion.Therefore, embodiments of the invention shall not be construed as and are defined in the given shape of figure target area in this manual, for example, should comprise the variation of the shape causing in manufacture.
Fig. 1 illustrates for the figure of the substrate board treatment of substrate processing method using same of the present invention is described.
With reference to figure 1, substrate board treatment can comprise treatment chamber 100, gas supply department 200 and control part 300.
Treatment chamber 100 provides the space airtight with respect to outside.The air of 140 pairs for the treatment of chamber 100 inside of vacuum pump carries out pumping.Treatment chamber 100 can comprise well heater 110, lifter pin 120 and baffle plate 130.Well heater 110 can heated substrates 112.Substrate 112 can be loaded on well heater 110 by lifter pin 120.Lifter 120 can make substrate 112 carry out lifting from well heater 110 when removal.
Below to utilizing the substrate processing method using same of the present invention of the substrate board treatment of formation like this to describe.
Fig. 2 is the process flow diagram that the substrate processing method using same of embodiments of the invention is shown.
Fig. 3 to Fig. 6 illustrates the photoresist pattern 114 of removing according to the substrate processing method using same of Fig. 2, the processing procedure sectional view of the second epidermis (crust) layer the 116 and first epidermal area 118.
As shown in Figure 1 to Figure 3, substrate 112 is loaded into (S100) on well heater 110.Substrate 112 can comprise monocrystalline silicon substrate.Photoresist pattern 114 is partly to block the mask that carries out the conductive impurities of Implantation on substrate 112.Ion implantation process can form the second epidermal area 116 and the first epidermal area 118 on photoresist pattern 114.The first epidermal area 118 can comprise silicon oxide film or conductive impurities layer.Silicon oxide film can, in ion implantation process, be generated by the silicon at substrate 112 surperficial sputters.The first epidermal area 118 can have approximately 20
thickness.The second epidermal area 116 can comprise the outermost carbon compound layer of photoresist pattern 114.
As shown in Figure 1, Figure 2 and shown in Fig. 4, well heater 110 is heated to the first temperature by substrate 112, and gas supply department 200 is to the interior supply active gases for the treatment of chamber 100, the first reacting gas and the second reacting gas (S200).Active gases can comprise nitrogen.The first reacting gas can comprise hydrofluorite (HF), Nitrogen trifluoride (NF
3), sulfur hexafluoride (SF
6).The second reacting gas can comprise hydrogen (H
2) or ammonia (NH
3).The first epidermal area 118 can comprise silicon oxide film or conductive impurities layer.The first reacting gas and the second reacting gas can react with the first epidermal area 118 on photoresist pattern selectively.The first reacting gas and the second reacting gas can mix at activating area 132, and (flow) flows on substrate 112.Active gases or the second reacting gas can provide to upper area 131, and the first reacting gas can provide to the lower area 133 of upper area 131 belows.Active gases, the first reacting gas and the second reacting gas can provide to upper area 131, because of after electricity slurry reaction mixes, mobile on substrate 112.Now, the first reacting gas and the second reacting gas do not react with the second epidermal area 116 and photoresist pattern 114 completely.Therefore, the first epidermal area 118 can be varied to byproduct layer 117 by the first reacting gas and the second reacting gas.Byproduct layer 117 can comprise silicon, hydrogen, nitrogen, fluorine and oxygen composition.Now, substrate 112 can be heated to from normal temperature the first temperature of 80 ℃ of less thaies.
As shown in Figure 1, Figure 2 and shown in Fig. 5, more than well heater 110 is heated to the first temperature by substrate 112, make byproduct layer 117 distillations (S300).Byproduct layer 117 can, by heat energy from the first epidermal area 116 sputters, utilize the rear gas of reaction to remove.Similarly, after reaction, gas can comprise hydrogen, nitrogen, silicon, fluorine and oxygen.After gas-heated to 80 ℃ is above after reaction, can be by its removal from substrate.
As shown in Figure 1, Figure 2 and shown in Fig. 6, well heater 110 is heated to the second temperature by substrate 112, and gas supply department 200 provides any one in the first reacting gas or the second reacting gas in treatment chamber 100, and active gases (S400).With regard to the second epidermal area 116, the first reacting gas or the second reacting gas can be removed the second epidermal area 116.Substrate 112 is heated to below approximately 130 ℃ by well heater 110.
As shown in Figure 1, Figure 2 and shown in Fig. 7, well heater 110 is heated to the 3rd more than temperature by substrate 112, and gas supply department 200 provides active gases and the second reacting gas (S500) in treatment chamber 100.The second reacting gas and active gases can be removed photoresist pattern 114.Substrate 112 can be heated to more than approximately 140 ℃ by well heater 110.Active gases can comprise oxygen.The second reacting gas can comprise ammonia (NH
3) or hydrogen (H
2).When having the first epidermal area 118 when remaining, photoresist pattern 114 can be by the second reacting gas and is removed completely.As mentioned above, because first the first epidermal area 118 is removed by the first reacting gas, therefore, photoresist pattern 114 can be removed from substrate 112 by the second reacting gas.
Therefore, the substrate processing method using same of embodiments of the invention can be removed the object being treated such as photoresist pattern 114 on substrate 112 neatly.
Generally speaking, the first epidermal area 118, the second epidermal area 116 and photoresist pattern 114 can be removed in the lump under the high temperature of approximately 240 ℃ of left and right, still, can cause ashing bad because of the remaining of the first epidermal area 118.In an embodiment of the present invention, the first epidermal area 118, the second epidermal area 116 and photoresist pattern 114 can be removed successively at the different temperature below approximately 140 ℃.As mentioned above, first the first epidermal area 118 can be removed below in approximately 80 ℃, and then, the second epidermal area 116 and photoresist pattern 114 can be approximately 140 ℃ of following removals.
Now, substrate processing method using same of the present invention can be carried out on the spot in a treatment chamber 100.In addition, the first epidermal area 118 and the second epidermal area 116 can be distinguished removal successively in a plurality for the treatment of chamber 100.The second epidermal area 116 can be in the interior removal of identical treatment chamber 100 with photoresist pattern 114.
Fig. 8 and Fig. 9 are the figure that roughly shows cluster type (cluster type) base plate processing system.
As shown in Figure 3, 8 and 9, base plate processing system can comprise base plate transfer module (EFEM:Equipment Front End module, 400), load protection chamber 500, transfer chamber 600, the first treatment chamber 150 and the second treatment chamber 160.
Base plate transfer module 400, in production line (fabrication line), can make wafer transfer box (FOUP:front opening unified pod, 410) standby (standby).Wafer transfer box 410 can make a plurality of substrates 112 move in the lump.A plurality of substrates 112 can one by one be taken out to load protection chamber 500 from base plate transfer module 400.
The first treatment chamber 150 and the second treatment chamber 160 have the structure identical with the treatment chamber 100 of Fig. 1.The first treatment chamber 150 can with load protection chamber 500 disposed adjacent.The first epidermal area 118 can be removed in the first treatment chamber 150.The first treatment chamber 150 can provide the first reacting gas and active gases to substrate 112.
The second treatment chamber 160 can provide the second reacting gas and active gases to substrate 112.The second reacting gas and active gases can be removed the second epidermal area 116 and photoresist pattern 114.The second treatment chamber 160 can with the first treatment chamber 150 disposed adjacent.The first epidermal area 118 and the second epidermal area 116 can be removed successively in the first treatment chamber 150 and the second treatment chamber 160.Therefore, base plate processing system can be boosted productivity.
The present invention described above is not limited to aforesaid embodiment and accompanying drawing, in being no more than the scope of technological thought of the present invention, can carry out multiple displacement, distortion and change, this technician with common knowledge who is the technical field of the invention is self-evident.
Claims (10)
1. for removing a substrate processing method using same for the photoresist pattern on substrate, comprising:
The first epidermal area is removed step, in chamber, provides the first reacting gas and the second reacting gas, at first temperature higher than normal temperature, removes the first epidermal area on described photoresist pattern;
The second epidermal area is removed step, and any one in described the first reacting gas or described the second reacting gas provided to described chamber, at than the second high temperature of described the first temperature, removes the second epidermal area on described photoresist pattern; And
Photoresist pattern is removed step, continues in described chamber, to supply described the second reacting gas, and at the 3rd temperature more than described the second temperature, from described substrate, removes described photoresist pattern.
2. substrate processing method using same as claimed in claim 1, wherein,
The first epidermal area is removed step and is comprised:
Accessory substance forms step, at the temperature of described the first temperature of deficiency, a described reacting gas and described the second reacting gas is reacted with described the first epidermal area, on described the second epidermal area, forms accessory substance; And
Accessory substance sublimation step, by described base plate heating to the first temperature, makes described accessory substance distillation.
3. substrate processing method using same as claimed in claim 2, wherein,
Described the first temperature is 80 degree Celsius.
4. the substrate processing method using same of recording as claim 2, wherein,
Described the first epidermal area comprises silicon oxide film.
5. substrate processing method using same as claimed in claim 1, wherein,
Described the second temperature is that 80 degree Celsius are to 140 degree Celsius.
6. substrate processing method using same as claimed in claim 1, wherein,
Described the 3rd temperature is 140 degree Celsius.
7. substrate processing method using same as claimed in claim 1, wherein,
Described the first reacting gas comprises hydrofluorite, Nitrogen trifluoride or sulfur hexafluoride.
8. substrate processing method using same as claimed in claim 1, wherein,
Described the second reacting gas comprises hydrogen or ammonia.
9. substrate processing method using same as claimed in claim 1, wherein,
Described the first epidermal area is removed step and provide the nitrogen mixing with described the first reacting gas in described chamber.
10. substrate processing method using same as claimed in claim 1, wherein,
The removal step of described the second epidermal area provides the oxygen mixing with described the second reacting gas.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120100458A KR101357785B1 (en) | 2012-09-11 | 2012-09-11 | Method for treating substrate |
| KR10-2012-0100458 | 2012-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103676501A true CN103676501A (en) | 2014-03-26 |
Family
ID=50269704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310362359.9A Pending CN103676501A (en) | 2012-09-11 | 2013-08-19 | Method for treating substrate |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101357785B1 (en) |
| CN (1) | CN103676501A (en) |
| TW (1) | TWI512788B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040018860A (en) * | 2002-08-27 | 2004-03-04 | 삼성전자주식회사 | Method of Ashing a photo resist pattern |
| US20060141799A1 (en) * | 2004-12-27 | 2006-06-29 | Dongbuanam Semiconductor Inc. | Method of manufacturing a semiconductor device |
| KR100710705B1 (en) * | 2005-11-22 | 2007-04-23 | 피에스케이 주식회사 | Method for ashing substrates |
| CN101101457A (en) * | 2006-07-04 | 2008-01-09 | 海力士半导体有限公司 | Method of removing photoresist |
| CN101727024A (en) * | 2008-10-14 | 2010-06-09 | 诺发系统有限公司 | High dose implantation strip (hdis) in h2 base chemistry |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8591661B2 (en) * | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
-
2012
- 2012-09-11 KR KR1020120100458A patent/KR101357785B1/en not_active IP Right Cessation
-
2013
- 2013-07-19 TW TW102125920A patent/TWI512788B/en not_active IP Right Cessation
- 2013-08-19 CN CN201310362359.9A patent/CN103676501A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040018860A (en) * | 2002-08-27 | 2004-03-04 | 삼성전자주식회사 | Method of Ashing a photo resist pattern |
| US20060141799A1 (en) * | 2004-12-27 | 2006-06-29 | Dongbuanam Semiconductor Inc. | Method of manufacturing a semiconductor device |
| KR100710705B1 (en) * | 2005-11-22 | 2007-04-23 | 피에스케이 주식회사 | Method for ashing substrates |
| CN101101457A (en) * | 2006-07-04 | 2008-01-09 | 海力士半导体有限公司 | Method of removing photoresist |
| CN101727024A (en) * | 2008-10-14 | 2010-06-09 | 诺发系统有限公司 | High dose implantation strip (hdis) in h2 base chemistry |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI512788B (en) | 2015-12-11 |
| TW201411694A (en) | 2014-03-16 |
| KR101357785B1 (en) | 2014-02-04 |
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Application publication date: 20140326 |