CN103676484A - Method for exposing graphics of mask pate - Google Patents
Method for exposing graphics of mask pate Download PDFInfo
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- CN103676484A CN103676484A CN201210322267.3A CN201210322267A CN103676484A CN 103676484 A CN103676484 A CN 103676484A CN 201210322267 A CN201210322267 A CN 201210322267A CN 103676484 A CN103676484 A CN 103676484A
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- mask plate
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- region
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Abstract
The invention provides a method for exposing graphics of a mask pate. The method comprises the following steps: according to the requirement of the needed exposure accuracy, dividing the graphics on the mask plate into a plurality of grades such as 1, 2,... and N; classifying the graphics with different grades into corresponding area units 1, 2,... and N adopting different exposure modes; and carrying out exposure on the graphics included in the area unit 1 in the first exposure mode, carrying out the exposure on the graphics included in the area unit 2 in the second exposure mode, and so forth, carrying out the exposure on the graphics included in the area unit N in the Nth exposure mode. According to the method provided by the invention, different exposure modes can be adopted for carrying out the exposure on the graphics on the mask plate according to the requirement of different exposure accuracies, so that the exposure time is shortened.
Description
Technical field
The present invention relates to semiconductor fabrication process, in particular to a kind of method that mask plate patterns is exposed.
Background technology
In the manufacture process of semiconductor devices, need a large amount of mask plates, by the exposure of mask plate, development, the figure on mask plate is transferred in the layers of material that forms semiconductor devices.As a rule, figure on mask plate comprises that this class figure need to be applied the accuracy that high-precision Exposure mode shifts fully to reach figure for semiconductor devices being carried out to the figure of performance test and realizing the figure of the various preset functions that semiconductor devices has; Figure on described mask plate also comprises the various figures that help out, and this type of figure does not generally have requirement or the described requirement of figure transfer accuracy lower, and the Exposure mode of applying low precision exposes and can reach requirement it.For requiring the figure of high exposure accuracy, need to carry out meticulous exposure to it, when adopting electron beam to carry out stepping exposure, speed is slower; And for requiring the figure of low exposure accuracy, do not need to carry out meticulous exposure, if also adopt same film speed to expose to the described figure of low exposure accuracy that requires, can increase the time of exposure meaninglessly, be unfavorable for shortening the production time and reduce production costs.
Thereby, a kind of method need to be proposed, to the figure of the different exposure accuracy of the requirement on mask plate, adopt respectively different Exposure modes to expose, thereby shorten the time shutter.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of method that mask plate patterns is exposed, comprising: according to the requirement of required exposure precision, by the graph area on mask plate be divided into some grades 1,2 ..., N; By the described figure with different brackets put under the corresponding territory element 1,2 that need to adopt different Exposure modes ..., N; With the first Exposure mode, the figure comprising in described territory element 1 is exposed, with the second Exposure mode, the figure comprising in described territory element 2 is exposed, the rest may be inferred, with N Exposure mode, the figure comprising in described territory element N is exposed, wherein, described Exposure mode has different film speeds, and described N is greater than 2 positive integer.
Further, described exposure accuracy requires high figure to comprise for semiconductor devices being carried out to the figure of performance test and realizing the figure of the various preset functions that semiconductor devices has.
Further, described exposure accuracy requires low figure to comprise the various figures that help out.
Further, obtain described territory element 1,2 ..., N mode comprise: a) territory element described in the direct component part in original figure unit in described mask plate; B) provide some templates, and determine the figure in described template, the figure on described mask plate and the figure in described template are carried out to phase reducing, with territory element described in Extraction parts.
Further, adopting described mode a) and described mode b) described in Extraction parts after territory element, the remainder on described mask plate forms the decline of described territory element.
Further, while thering is a plurality of figure being fixedly installed on mask plate described in any one on described mask plate, by described a plurality of graphical layout that are fixedly installed on mask plate described in any one in described template.
Further, while thering is a frame shape closed region without any figure on described mask plate, the process of determining the figure in described template is as follows: take the position at inner boundary place of described frame shape closed region is starting point, the center in the region that described inner boundary surrounds towards described inner boundary is progressively approached, when the existing of figure of described mask plate being detected, the operation that approaches of described inner boundary stops, and the region now being surrounded by described inner boundary forms the figure of described template.
Further, while thering is a frame shape closed region without any figure on described mask plate, the process of determining the figure in described template is as follows: take the position at outer boundary place of described frame shape closed region is starting point, the reverse direction at the center in the region that the inner boundary of described outer boundary towards described frame shape closed region surround is progressively expanded, when the existing of figure of described mask plate being detected, the extended operation of described outer boundary stops, and the region now being surrounded by described outer boundary forms the figure of described template.
Further, while thering is a solid closed region without any figure on described mask plate, the process of determining the figure in described template is as follows: take the position at place, border of described solid closed region is starting point, described border is progressively expanded towards the reverse direction at the center of described solid closed region, when the existing of figure of described mask plate being detected, the extended operation on described border stops, and the region now being surrounded by described border forms the figure of described template.
Further, the figure comprising in described territory element 1 is that the exposure accuracy on described mask plate requires the highest figure, the figure comprising in described territory element 2 is that exposure accuracy requires the figure lower than described territory element 1, the rest may be inferred, and the figure comprising in described territory element N is that exposure accuracy requires minimum figure.
Further, the film speed of described Exposure mode is accelerated successively from the first Exposure mode.
According to the present invention, can adopt respectively different Exposure modes to expose to the figure of the different exposure accuracy of the requirement on described mask plate, thereby shorten the time shutter.
Accompanying drawing explanation
Following accompanying drawing of the present invention is used for understanding the present invention in this as a part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.
In accompanying drawing:
Fig. 1 is the process flow diagram of the method that mask plate patterns is exposed that proposes of the present invention;
Fig. 2 is the schematic diagram of the mask plate that exemplifies of embodiments of the invention 1;
Fig. 3 A-Fig. 3 C is the schematic diagram of the mask plate that exemplifies of embodiments of the invention 2;
Fig. 4 is the schematic diagram of the mask plate that exemplifies of embodiments of the invention 3;
Fig. 5 completes the expose contrast schematic diagram of required time of the figure on mask plate for the method that adopts respectively the present invention and propose and prior art.
Embodiment
In the following description, a large amount of concrete details have been provided to more thorough understanding of the invention is provided.Yet, it is obvious to the skilled person that the present invention can be implemented without one or more these details.In other example, for fear of obscuring with the present invention, for technical characterictics more well known in the art, be not described.
In order thoroughly to understand the present invention, will detailed step be proposed in following description, so that the method that mask plate patterns is exposed that explaination the present invention proposes.Obviously, execution of the present invention is not limited to the specific details that the technician of semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, yet except these are described in detail, the present invention can also have other embodiments.
Should be understood that, when using in this manual term " to comprise " and/or when " comprising ", it indicates and has described feature, integral body, step, operation, element and/or assembly, but do not get rid of, does not exist or additional one or more other features, integral body, step, operation, element, assembly and/or their combination.
The present invention proposes a kind of method that mask plate patterns is exposed, the figure of the different exposure accuracy of requirement by mask plate adopts respectively different Exposure modes to expose to shorten the time shutter.
With reference to Fig. 1, wherein show the process flow diagram of the method that mask plate patterns is exposed of the present invention's proposition, for schematically illustrating its flow process.
In step 101, according to the requirement of required exposure precision, by the graph area on mask plate be divided into some grades 1,2 ..., N;
In step 102, by the described figure with different brackets put under the corresponding territory element 1,2 that need to adopt different Exposure modes ..., N;
In step 103, with the first Exposure mode, the figure comprising in described territory element 1 is exposed, with the second Exposure mode, the figure comprising in described territory element 2 is exposed, the rest may be inferred, with N Exposure mode, the figure comprising in described territory element N is exposed
Wherein, described N is greater than 2 positive integer.
In above-mentioned flow process, obtain described territory element 1,2 ..., N mode comprise: a) territory element described in the direct component part in original figure unit in described mask plate; B) provide some templates, and determine the figure in described template, the figure on described mask plate and the figure in described template are carried out to phase reducing, thereby extract the described territory element of part.Adopt described in above-mentioned two kinds of mode Extraction parts after territory element, the remainder on described mask plate forms the decline of described territory element.The figure comprising in described territory element 1 is that the exposure accuracy on described mask plate requires the highest figure, the figure comprising in described territory element 2 is that exposure accuracy requires the figure lower than described territory element 1, the rest may be inferred, and the figure comprising in described territory element N is that exposure accuracy requires minimum figure.Correspondingly, the film speed of described Exposure mode is accelerated successively from the first Exposure mode.As a rule, require figure that exposure accuracy is high to comprise for semiconductor devices being carried out to the figure of performance test and realizing the figure of the various preset functions that semiconductor devices has, require the figure that exposure accuracy is low to comprise the various figures that help out.
Below, illustrate in conjunction with specific embodiments figure on mask plate be how to put under respectively described territory element 1,2 ..., in N.
embodiment 1
Referring to Fig. 2, wherein show the schematic diagram of the mask plate that embodiment 1 exemplifies.As shown in the figure, have a plurality of figures that are fixedly installed 202 on mask plate 201 on any one mask plate, described figure 202 requires identical exposure accuracy a.For described mask plate 201, described a plurality of figures 202 are arranged in a template, described template has been determined the region that requires identical exposure accuracy a of described mask plate 201; Then, described mask plate 201 and described template are carried out to phase reducing, to obtain other region that requires to be different from described exposure accuracy a.If the desired exposure accuracy in described other region identical (for example requiring identical exposure accuracy b), the figure on described mask plate 201 is put respectively under two regions, i.e. the region that requires identical exposure accuracy a at described a plurality of figure 202 places and the described region that requires identical exposure accuracy b.If the desired exposure accuracy in described other region is different, can to described other region, do further division with reference to the method in following embodiment 2.
embodiment 2
Referring to Fig. 3 A-Fig. 3 C, wherein show respectively the schematic diagram of the mask plate that embodiment 2 exemplifies.
As shown in Figure 3A, on mask plate 301, have one without the part indicating with black in the frame shape closed region 302(figure of any figure).For described mask plate 301, take the position at inner boundary place of described frame shape closed region 302 is starting point, the center in the region that described inner boundary surrounds towards described inner boundary is progressively approached, when the existing of figure of described mask plate 301 being detected, the operation that approaches of described inner boundary stops, and the region now being surrounded by described inner boundary forms in the figure 303(figure of template region that dotted line surrounds with interior part).
As shown in Figure 3 B, on mask plate 301, have one without the part indicating with black in the frame shape closed region 302(figure of any figure).For described mask plate 301, take the position at outer boundary place of described frame shape closed region 302 is starting point, the reverse direction at the center in the region that the inner boundary of described outer boundary towards described frame shape closed region 302 surround is progressively expanded, when the existing of figure of described mask plate 301 being detected, the extended operation of described outer boundary stops, and the region now being surrounded by described outer boundary forms region that dotted line surrounds part in addition in the figure 303(figure of template).
As shown in Figure 3 C, on mask plate 301, have one without the part indicating with black in the solid closed region 302(figure of any figure).For described mask plate 301, take the position at place, border of described solid closed region 302 is starting point, described border is progressively expanded towards the reverse direction at 302 center, described solid closed region, when the existing of figure of described mask plate 301 being detected, the extended operation on described border stops, and the region now being surrounded by described border forms region that dotted line surrounds part in addition in the figure 303(figure of template).
After obtaining needed template by above three kinds of examples, described mask plate 201 and described template are carried out to phase reducing, to obtain the region that can implement identical exposure accuracy.If the figure being positioned within described template scope further requires different exposure accuracy, can determine the region that these figures should put under with reference to the method in following embodiment 3.
embodiment 3
Referring to Fig. 4, wherein show the schematic diagram of the mask plate that embodiment 3 exemplifies, this mask plate is that mask plate 301 that embodiment 2 exemplifies is positioned at the part within figure 303 scopes of described template.In described mask plate, there are four independently figure 304, figure 305, figure 306 and figures 307 that require different exposure accuracy, described figure 304, figure 305, figure 306 and figure 307 directly form respectively four regions that require different exposure accuracy, and the part that described mask plate is positioned at outside described four regions forms the region that requires another exposure accuracy.In this embodiment, only exemplified four independently figures that require different exposure accuracy, those skilled in the art can know, and the described method of this embodiment is equally applicable to have the situation of the independently figure of the different exposure accuracy of a plurality of requirements.
Referring to Fig. 5, wherein show and adopt respectively method that the present invention proposes and prior art to complete the expose contrast schematic diagram of required time of the figure on mask plate.For prior art, it adopts identical Exposure mode (for example the first Exposure mode) to expose to two of a mask plate parts (region A and region B); For the method proposing for the present invention, after mask plate being divided into described region A and region B, adopt respectively different Exposure modes to expose to described region A and region B, adopt the first Exposure mode to expose to described region A, adopt the second Exposure mode to expose to described region B, the film speed of described the second Exposure mode is faster than the film speed of described the first Exposure mode, therefore, can significantly reduce the time shutter.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment is the object for giving an example and illustrating just, but not is intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, according to instruction of the present invention, can also make more kinds of variants and modifications, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (11)
1. a method of mask plate patterns being exposed, comprising:
According to the requirement of required exposure precision, by the graph area on mask plate be divided into some grades 1,2 ..., N;
By the described figure with different brackets put under the corresponding territory element 1,2 that need to adopt different Exposure modes ..., N;
With the first Exposure mode, the figure comprising in described territory element 1 is exposed, with the second Exposure mode, the figure comprising in described territory element 2 is exposed, the rest may be inferred, with N Exposure mode, the figure comprising in described territory element N is exposed,
Wherein, described Exposure mode has different film speeds, and described N is greater than 2 positive integer.
2. method according to claim 1, is characterized in that, requires figure that described exposure accuracy is high to comprise for semiconductor devices being carried out to the figure of performance test and realizing the figure of the various preset functions that semiconductor devices has.
3. method according to claim 1, is characterized in that, requires the figure that described exposure accuracy is low to comprise the various figures that help out.
4. method according to claim 1, is characterized in that, obtain described territory element 1,2 ..., N mode comprise: a) territory element described in the direct component part in original figure unit in described mask plate; B) provide some templates, and determine the figure in described template, the figure on described mask plate and the figure in described template are carried out to phase reducing, with territory element described in Extraction parts.
5. method according to claim 4, is characterized in that, adopts described mode a) and described mode b) described in Extraction parts after territory element, the remainder on described mask plate forms the decline of described territory element.
6. method according to claim 4, it is characterized in that, while thering is a plurality of figure being fixedly installed on mask plate described in any one on described mask plate, by described a plurality of graphical layout that are fixedly installed on mask plate described in any one in described template.
7. method according to claim 4, it is characterized in that, while thering is a frame shape closed region without any figure on described mask plate, the process of determining the figure in described template is as follows: take the position at inner boundary place of described frame shape closed region is starting point, the center in the region that described inner boundary surrounds towards described inner boundary is progressively approached, when the existing of figure of described mask plate being detected, the operation that approaches of described inner boundary stops, and the region now being surrounded by described inner boundary forms the figure of described template.
8. method according to claim 4, it is characterized in that, while thering is a frame shape closed region without any figure on described mask plate, the process of determining the figure in described template is as follows: take the position at outer boundary place of described frame shape closed region is starting point, the reverse direction at the center in the region that the inner boundary of described outer boundary towards described frame shape closed region surround is progressively expanded, when the existing of figure of described mask plate being detected, the extended operation of described outer boundary stops, the region now being surrounded by described outer boundary forms the figure of described template.
9. method according to claim 4, it is characterized in that, while thering is a solid closed region without any figure on described mask plate, the process of determining the figure in described template is as follows: take the position at place, border of described solid closed region is starting point, described border is progressively expanded towards the reverse direction at the center of described solid closed region, when the existing of figure of described mask plate being detected, the extended operation on described border stops, and the region now being surrounded by described border forms the figure of described template.
10. method according to claim 1, it is characterized in that, the figure comprising in described territory element 1 is that the exposure accuracy on described mask plate requires the highest figure, the figure comprising in described territory element 2 is that exposure accuracy requires the figure lower than described territory element 1, the rest may be inferred, and the figure comprising in described territory element N is that exposure accuracy requires minimum figure.
11. methods according to claim 10, is characterized in that, the film speed of described Exposure mode is accelerated successively from the first Exposure mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210322267.3A CN103676484B (en) | 2012-09-03 | 2012-09-03 | A kind of method that mask plate patterns is exposed |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210322267.3A CN103676484B (en) | 2012-09-03 | 2012-09-03 | A kind of method that mask plate patterns is exposed |
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| CN103676484A true CN103676484A (en) | 2014-03-26 |
| CN103676484B CN103676484B (en) | 2016-04-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113138527A (en) * | 2020-01-16 | 2021-07-20 | 中芯国际集成电路制造(上海)有限公司 | Mask, storage unit and SRAM device |
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| JP2011060882A (en) * | 2009-09-08 | 2011-03-24 | Nikon Corp | Exposure method, device manufacturing method, and exposure system |
| JP2011199244A (en) * | 2009-08-10 | 2011-10-06 | Nikon Corp | Exposing method, server device, aligner, and method of manufacturing device |
| CN102346368A (en) * | 2010-07-23 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing double pattern exposure mask and double pattern exposure method |
| CN102411267A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Exposure method adopting lithography machine |
| CN102520551A (en) * | 2011-11-14 | 2012-06-27 | 深圳市华星光电技术有限公司 | Method and system for forming alignment film areas on basis of UV (ultraviolet) exposure |
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2012
- 2012-09-03 CN CN201210322267.3A patent/CN103676484B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2011199244A (en) * | 2009-08-10 | 2011-10-06 | Nikon Corp | Exposing method, server device, aligner, and method of manufacturing device |
| JP2011060882A (en) * | 2009-09-08 | 2011-03-24 | Nikon Corp | Exposure method, device manufacturing method, and exposure system |
| CN102346368A (en) * | 2010-07-23 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing double pattern exposure mask and double pattern exposure method |
| CN102520551A (en) * | 2011-11-14 | 2012-06-27 | 深圳市华星光电技术有限公司 | Method and system for forming alignment film areas on basis of UV (ultraviolet) exposure |
| CN102411267A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Exposure method adopting lithography machine |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113138527A (en) * | 2020-01-16 | 2021-07-20 | 中芯国际集成电路制造(上海)有限公司 | Mask, storage unit and SRAM device |
| CN113138527B (en) * | 2020-01-16 | 2024-04-02 | 中芯国际集成电路制造(上海)有限公司 | Mask, memory cell and SRAM device |
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| CN103676484B (en) | 2016-04-27 |
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