CN103675627A - Photonic positioning ultraviolet detector - Google Patents
Photonic positioning ultraviolet detector Download PDFInfo
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- CN103675627A CN103675627A CN201310722679.0A CN201310722679A CN103675627A CN 103675627 A CN103675627 A CN 103675627A CN 201310722679 A CN201310722679 A CN 201310722679A CN 103675627 A CN103675627 A CN 103675627A
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Abstract
A photonic positioning ultraviolet detector comprises an imaging module, an ultraviolet photon collection structure and a transmitting module. The imaging module is used for searching and/or positioning an external discharge position of a detected device and acquiring an image at least comprising the external discharge position of the detected device, the ultraviolet photon collection structure is used for receiving ultraviolet photons generated by the external discharge position and converting ultraviolet photon signals into digital signals, and the image and the digital signals are transmitted to a background processing system by the transmitting module. By the aid of the imaging module and an ultraviolet focal plane, the external discharge position of the detected device is searched and/or positioned in a non-contact mode, the ultraviolet photons generated by the external discharge position are counted, and the photonic positioning ultraviolet detector has the advantages of low manufacturing cost, easiness in integration, high sensitivity and reliability, simplicity in operation and the like.
Description
Technical field
the corona discharge that the present invention relates to power transmission and transforming equipment outside detects applied technical field, relates in particular to a kind of photon type location ultraviolet detector.
Background technology
The insulating medium of power equipment, under enough strong electric field action, can discharge within the scope of its outside corona, and this electric discharge does not form conductive channel only to cause the insulation corona short circuit between conductor and is limited.Corona discharge all can have some impacts to insulating medium each time, and slight corona discharge is less on the impact of Electric Power Equipment Insulation, and the decline of dielectric strength is slower; And strong corona discharge can make dielectric strength decline very soon.Therefore, corona discharge is the main cause that causes that power transmission and transforming equipment insulating medium is deteriorated, and monitoring corona discharge amount can be assessed the duty of power transmission and transforming equipment insulating medium.This corona discharge is also corona discharge, in the process of corona discharge, can produce ultraviolet photon, and its ultraviolet light intensity (ultraviolet light subnumber) and corona discharge amount are contacted directly.How to survey early corona discharge amount by an important topic that is electric power netting safe running.Formulate and the strict detection rules of execution science are the Main Means that ensure electric power netting safe running, but be mainly by manual inspection at present, discovery power transmission and transforming equipment corona discharge and accident defect that manual inspection often can not be promptly and accurately.
Detect at present the main flow of corona discharge for using ultraviolet imager, but this detection technique can only detect qualitatively to corona discharge, its principle is by ultraviolet hot spot is carried out to image calculation, draw the coarse value of discharging light subnumber value, so the defect level of embodiment device trouble spot really.And can not carry out in real time power equipment, detect accurately, guarantee safe operation.
Summary of the invention
In order to overcome the problems referred to above, the present invention provides a kind of photon type location ultraviolet detector of the ultraviolet light subnumber producing can accurately draw corona discharge time to society.
Technical scheme of the present invention is: a kind of photon type location ultraviolet detector is provided, comprise image-forming module, ultraviolet photon gathers structure and sending module, the external discharge position of detected device is found and/or located to described image-forming module, and acquisition at least contains the image of the detected device at external discharge position, simultaneously described ultraviolet photon gathers structure and receives the ultraviolet photon that described external discharge position produces, described ultraviolet photon gathers structure and converts ultraviolet photon signal to digital signal, described image and described digital signal send to background processing system by described sending module.
As improvement of the present invention, described ultraviolet photon gathers structure and comprises successively optical system, ultraviolet filter and ultraviolet focal-plane, described ultraviolet focal-plane and digital processing system are electrically connected, described ultraviolet filter is configured to only allow ultraviolet photon to pass through, described ultraviolet focal-plane converts the ultraviolet photon signal receiving to simulating signal, and described digital processing system converts described simulating signal to digital signal.
As improvement of the present invention, also comprise the memory module being electrically connected with described sending module, described image-forming module, described ultraviolet photon gather structure and respectively described image, described digital signal are stored in described memory module.
As improvement of the present invention, described image-forming module and described ultraviolet photon gather structure and are radially arranged in space.
As improvement of the present invention, described sending module is wireless network communication module or serial communication module.
As improvement of the present invention, described image-forming module is Visible-light CCD image-forming module or visible ray cmos imaging module.
The present invention is owing to having adopted image-forming module and ultraviolet focal-plane, by non-contacting mode, the external discharge position of detected device is found and/or located, and the ultraviolet photon simultaneously outside discharge part position being produced is counted, thereby know exactly the defect level of detected device fault point (electric discharge position), there is cost low, easy of integration, high sensitivity, high reliability and simple operation and other advantages.
Accompanying drawing explanation
Fig. 1 is the perspective view of the present invention while being connected with mount pad.
Fig. 2 is photon type location ultraviolet detector square frame principle schematic diagram in Fig. 1.
Wherein: 1. optical system; 2. ultraviolet filter; 3. ultraviolet focal-plane; 4. digital processing system; 5. memory module; 6. sending module; 7. image-forming module; 8. ultraviolet photon gathers structure; 100. photon type location ultraviolet detectors; 200. mount pad.
Embodiment
The photon type location ultraviolet detection method that the present invention uses, comprises the steps:
A, the external discharge position of detected device is found and/or is located:
With image-forming module, find and/or locate the external discharge position of detected device, and obtain the image of the detected device that at least contains external discharge position;
B, the ultraviolet photon that the external discharge position of detected device is produced gather:
When described image-forming module is found and/or navigated to the external discharge position of detected device, ultraviolet photon gathers structure and receives the ultraviolet photon that described external discharge position produces, and converts described ultraviolet photon signal to digital signal;
C, signal send:
Described image-forming module and described ultraviolet photon gather structure by sending module, respectively described image and described digital signal are sent to background processing system.Then background processing system is by after software computing and analyzing, by display interface, be shown to user, user just can obtain from display interface the quantity that external discharge position produces ultraviolet photon intuitively, thereby knows exactly the defect level of detected device fault point.
In the ultraviolet detection method of photon type location, can, to being detected the external discharge position of a position of device, survey quantity and the external discharge portion bit position of ultraviolet photon simultaneously.Also can, to being detected the external discharge position of a plurality of positions of device, survey quantity and external discharge portion bit position that ultraviolet photon is sent in a plurality of positions simultaneously.
In the ultraviolet detection method of photon type location, described ultraviolet photon gathers structure and comprises optical system, ultraviolet filter and the ultraviolet focal-plane setting gradually, described ultraviolet focal-plane and digital processing system are electrically connected, described ultraviolet filter is configured to only allow ultraviolet photon to pass through, filter the bias light in visible ray, described ultraviolet focal-plane converts the ultraviolet photon signal receiving to simulating signal, and described simulating signal converts digital signal to after by described digital processing system.
In the ultraviolet detection method of photon type location, also comprise data storing step, a memory module being electrically connected with described sending module is set, and described image-forming module, described ultraviolet photon gather structure and respectively described image, described digital signal are stored in described memory module.Described image-forming module is Visible-light CCD image-forming module or visible ray cmos imaging module.
When the external discharge position of detected device is detected, described image-forming module obtains in the image (visible images) of detected device, at least comprise described external discharge position, the visual field showing in described image is more than or equal to described external discharge position, and the one-tenth frame of described image-forming module is aimed at described external discharge position.Described image-forming module receives the ultraviolet photon being produced by the described external discharge position of described one-tenth frame aligning.The benefit of operation is like this, can very accurately must know described external discharge portion's bit position and its ultraviolet light subnumber producing, thereby knows accurately the defect level of detected device fault point (electric discharge position).
In said method, described ultraviolet focal-plane adopts back illumination photodiode array and silicon sensing circuit in preparation, the ultraviolet focal-plane device that obtains blending together by indium pole interconnection mode.Described ultraviolet focal-plane can also be mutually integrated with ultraviolet focal-plane array with diffractive microlens array, described diffractive microlens array and ultraviolet focal-plane array phase integrated technology, on the same chip of ultraviolet focal-plane array, to carry out the making of diffraction microlens array, the back side by the preparation of diffraction lens array at ultraviolet focal-plane array, and adopting double-sided alignment technology, combination multicoating is prepared diffraction microlens array with the fine process of peeling off.Described double-sided alignment technology comprises the two-sided photoetching technique of exposure simultaneously, or the photoetching technique of infrared aligning for one side exposure, reverse side, or the photoetching technique of split field's aligning for one side exposure, reverse side.
Refer to Fig. 1 and Fig. 2, what Fig. 1 and Fig. 2 disclosed is a kind of photon type location ultraviolet detector use figure and frame principle figure thereof, comprise photon type location ultraviolet detector 100 and mount pad 200, described photon type location ultraviolet detector 100 is arranged on described mount pad 200, described photon type location ultraviolet detector 100 can rotate or rotate on described mount pad 200, thereby detected device is carried out to periodical inspection.Described photon type location ultraviolet detector 100 comprises image-forming module 7, ultraviolet photon gathers structure 8 and sending module 5, the external discharge position of detected device is found and/or located to described image-forming module 7, and acquisition at least contains the image (visible images) of the detected device at described external discharge position, simultaneously described ultraviolet photon gathers structure 8 and receives the ultraviolet photon that described external discharge position produces, described ultraviolet photon gathers structure 8 and converts ultraviolet photon signal to digital signal, described image and described digital signal send to background processing system by described sending module 5.
In the present embodiment, described ultraviolet photon gathers structure 8 and comprises optical system 1, ultraviolet filter 2 and the ultraviolet focal-plane 3 setting gradually, described ultraviolet focal-plane 3 is electrically connected with digital processing system 4, described ultraviolet filter 2 is configured to only allow ultraviolet photon to pass through, and filters other bias lights in visible ray.Described ultraviolet focal-plane 3 converts the ultraviolet photon signal receiving to simulating signal, and described simulating signal converts digital signal to after by described digital processing system 4.
In the present embodiment, described photon type location ultraviolet detector 100 also comprises the memory module 5 being electrically connected with described sending module 6, and described image-forming module 7, described ultraviolet photon gather structure 8 and respectively described image, described digital signal stored in described memory module 5.Described sending module 6 is wireless network communication module and/or serial communication module.Described image-forming module 7 is Visible-light CCD image-forming module or visible ray cmos imaging module, and described image-forming module 7 can also replace with ultraviolet imager or ultraviolet camera.
In the present embodiment, described image-forming module 7 and described ultraviolet photon gather structure 8 and are radially arranged in space, and described image-forming module 7 is arranged on top, below, the left or right-hand that described ultraviolet photon gathers structure 8.When the external discharge position of detected device is detected, the one-tenth frame of described image-forming module 7 is aimed at described external discharge position with the frame that becomes that described ultraviolet photon gathers structure 8 simultaneously, and send to background processing system to process the described image and the described digital signal that obtain, although there is certain error in this method, but background processing system is by after carrying out certain correction to described error, described error is negligible, do not affect described external discharge portion's bit position and its relevant information such as ultraviolet light subnumber that produce, thereby know accurately the defect level of detected device fault point (electric discharge position).
In the present embodiment, can also comprise beam splitter, described beam splitter is arranged on the place ahead of described image-forming module 7 and described ultraviolet photon collection structure 8, described beam splitter is divided into by the light beam that enters into described photon type location ultraviolet detector 100 light beam that two-way is identical, one road light beam is received by described image-forming module 7, and another road light beam is gathered structure 8 by described ultraviolet photon and receives.The benefit of design is like this, described image-forming module 7 and described ultraviolet photon gather structure 8 and can to the external discharge position of detected device, detect simultaneously, and what can guarantee described image-forming module 7 and 8 detections of described ultraviolet photon collection structure is identical point, described external discharge portion bit position and its relevant information such as ultraviolet light subnumber that produce more accurately, thus know accurately the defect level of detected device fault point (electric discharge position).
The effect of described beam splitter is that the light beam of input is divided into two bundles or multi-beam (being referred to as beamlet or son bundle), and these beamlets can be along required direction output.Beamlet can be the light beam that power is equal, can be also the light beam of different capacity, to meet the needs of different application.
In the present embodiment, quantity and the described external discharge portion bit position of ultraviolet photon are surveyed in external discharge position that can be to a position of detected device simultaneously.Also quantity and described external discharge portion bit position that ultraviolet photon is sent in a plurality of positions are surveyed in external discharge position that can be to a plurality of positions of detected device simultaneously.
In the present embodiment, can also comprise completely reflecting mirror, described full transmitting mirror is arranged on the middle position of described optical system 1, the described a part of light beam (ultraviolet photon and/or sunshine) that enters into described photon type location ultraviolet detector 100 will reflex on spectroscope through described completely reflecting mirror, the photon of described spectroscope reflection is received by described image-forming module 7, and another part light beam is gathered structure 8 by described ultraviolet photon and receives.
In the present embodiment, what the preparation of described ultraviolet focal-plane 3 adopted is back illumination photodiode array and silicon sensing circuit, the technology of the ultraviolet focal-plane device that obtains blending together by indium pole interconnection mode.Because gallium nitride (GaN) is that ultraviolet focal-plane is all grown in Sapphire Substrate, character due to sapphire insulation, ultraviolet focal-plane array can not see through substrate and collect signal as silicon-based detector, therefore ultraviolet focal-plane array must be detector back side induced radiation, and front is connected with silicon sensing circuit.
Described ultraviolet focal-plane 3 can also be mutually integrated with ultraviolet focal-plane array with diffractive microlens array, described diffractive microlens array and ultraviolet focal-plane array phase integrated technology, on the same chip of ultraviolet focal-plane array, to carry out the making of diffraction microlens array, the back side by the preparation of diffraction lens array at ultraviolet focal-plane array, and adopting double-sided alignment technology, combination multicoating is prepared diffraction microlens array with the fine process of peeling off.Double-sided alignment technology comprises the two-sided photoetching technique of exposure simultaneously, or the photoetching technique of infrared aligning for one side exposure, reverse side, or the photoetching technique of split field's aligning for one side exposure, reverse side.
Described diffractive microlens array collects mutually with ultraviolet focal-plane array, can improve the performance of described ultraviolet focal-plane 3, the integrated detector of small size that makes of described ultraviolet focal-plane array and described micro lens array has large photosensistive surface detector sensitivity, and described ultraviolet focal-plane array is GaN/AlGaN(aluminum gallium nitride) p-i-n type back-illuminated type 32 * 32 ultraviolet focal-plane arrays.Described ultraviolet focal-plane 3 can receive one by one to photon, the ultraviolet photon numerical value then discharging in statistic processes.The sensitivity of described photon type location ultraviolet detector can reach 10 18 powers, so degree of discharge can be detected in early days accurately, in real time.
Described photon type location ultraviolet detector 100 adopts high-performance ultraviolet focal-plane Detection Techniques, merged super low-power consumption technology simultaneously, the principle of this technology is to close in the time of can accomplishing dormancy to the great described image-forming module 7 of power consumption, during use, open, this mechanism can reduce the power consumption of described photon type location ultraviolet detector greatly again.The volume of described photon type location ultraviolet detector is very little, can realize portable and two kinds of working methods of on-line monitoring, has realized the function that remote measurement in real time and quantitative measurment initiatively prevent.
Described photon type location ultraviolet detector 100 combines the principle that absorbs ultraviolet light based on solute molecule, has created the frontier that power transmission and transforming equipment corona discharge ultraviolet detects.Meet the requirement that the electrical network extra-high voltage equipment ultraviolets such as high-voltage corona peculiar spectrum, hypersensitivity photon counting, corona location detect, technically, photon type location ultraviolet detector can be regarded as a professional high sensitivity and can locate corona detector.
100 pairs of detected devices of described photon type location ultraviolet detector carry out periodical inspection, when finding that there is electric phenomenon the outside of detected device, surveys outside discharge part position at once.First, with described image-forming module 7, find and/or locate the external discharge position of detected device, and obtain the image (visible images) of the detected device that at least contains described external discharge position.Secondly, when described image-forming module 7 is found and/or is navigated to the described external discharge position of detected device, described ultraviolet photon gathers structure 8 and receives only the ultraviolet photon producing from described external discharge position, and described ultraviolet photon gathers structure 8 and converts ultraviolet photon signal to digital signal.Finally, described image-forming module 7 and described ultraviolet photon gather structure 8 described image and described digital signal are stored in described memory module 5, and send to background processing system by described sending module 6.Background processing system, by after software computing and analyzing, is shown to user by display interface, and user just can obtain from display interface the quantity that external discharge position produces ultraviolet photon intuitively, thereby knows exactly the defect level of detected device fault point.
The present invention, owing to having adopted described image-forming module 7 and described ultraviolet focal-plane 3, has overcome the shortcoming of the type sensors such as traditional silicon ultraviolet enhancing detector, ultravioplet photomultiplier, micro-channel plate detector, ultraviolet CCD.Meet the requirement that the electrical network extra-high voltage equipment ultraviolets such as high-voltage corona detection, hypersensitivity photon counting, corona location detect simultaneously.Described photon type location ultraviolet detector 100 costs are low, easy of integration, there are high sensitivity and high reliability, simple to operate, adopt non-contacting mode to the early discharge of the accident defect point of measured device carry out Measurement accuracy and accurately location, and antistatic interference and anti-clutter interference ability strong.
Claims (6)
1. a photon type is located ultraviolet detector, comprise image-forming module, it is characterized in that, also comprise that ultraviolet photon gathers structure and sending module, the external discharge position of detected device is found and/or located to described image-forming module, and acquisition at least contains the image of the detected device at external discharge position, simultaneously described ultraviolet photon gathers structure and receives the ultraviolet photon that described external discharge position produces, described ultraviolet photon gathers structure and converts ultraviolet photon signal to digital signal, described image and described digital signal send to background processing system by described sending module.
2. photon type according to claim 1 is located ultraviolet detector, it is characterized in that: described ultraviolet photon gathers structure and comprises successively optical system, ultraviolet filter and ultraviolet focal-plane, described ultraviolet focal-plane and digital processing system are electrically connected, described ultraviolet filter is configured to only allow ultraviolet photon to pass through, described ultraviolet focal-plane converts the ultraviolet photon signal receiving to simulating signal, and described digital processing system converts described simulating signal to digital signal.
3. photon type according to claim 1 and 2 is located ultraviolet detector, it is characterized in that: also comprise the memory module being electrically connected with described sending module, described image-forming module, described ultraviolet photon gather structure and respectively described image, described digital signal stored in described memory module.
4. photon type according to claim 1 and 2 location ultraviolet detector, is characterized in that: described image-forming module and described ultraviolet photon gather structure and be radially arranged in space.
5. photon type according to claim 1 and 2 location ultraviolet detector, is characterized in that: described sending module is wireless network communication module or serial communication module.
6. according to the photon type location ultraviolet detector described in any one claim in claim 1 or 2, it is characterized in that: described image-forming module is Visible-light CCD image-forming module or visible ray cmos imaging module.
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Cited By (7)
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CN104111413A (en) * | 2014-07-18 | 2014-10-22 | 深圳供电局有限公司 | Device and method for evaluating corona discharge of power transmission and transformation equipment |
CN105574950A (en) * | 2014-10-14 | 2016-05-11 | 深圳供电局有限公司 | Ultraviolet inspection method, handheld data acquisition equipment and server |
CN106940419A (en) * | 2017-05-08 | 2017-07-11 | 上海电力学院 | The ultraviolet detector of number of photons is compensated based on tellurometer survey |
CN106997022A (en) * | 2017-05-08 | 2017-08-01 | 上海电力学院 | The detection means of ultraviolet partial discharge number of photons is compensated based on laser ranging |
CN107192924A (en) * | 2017-03-21 | 2017-09-22 | 华北电力大学(保定) | A kind of non-common optical axis ultraviolet imager electric discharge point location antidote |
CN110244197A (en) * | 2019-04-22 | 2019-09-17 | 电子科技大学 | A kind of low-temperature plasma scalpel discharge stability detection device and detection method |
TWI825608B (en) * | 2022-03-04 | 2023-12-11 | 江政慶 | Abnormality detection system and abnormality detection method |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104111413A (en) * | 2014-07-18 | 2014-10-22 | 深圳供电局有限公司 | Device and method for evaluating corona discharge of power transmission and transformation equipment |
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CN107192924A (en) * | 2017-03-21 | 2017-09-22 | 华北电力大学(保定) | A kind of non-common optical axis ultraviolet imager electric discharge point location antidote |
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CN106997022A (en) * | 2017-05-08 | 2017-08-01 | 上海电力学院 | The detection means of ultraviolet partial discharge number of photons is compensated based on laser ranging |
CN110244197A (en) * | 2019-04-22 | 2019-09-17 | 电子科技大学 | A kind of low-temperature plasma scalpel discharge stability detection device and detection method |
TWI825608B (en) * | 2022-03-04 | 2023-12-11 | 江政慶 | Abnormality detection system and abnormality detection method |
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Effective date of registration: 20220302 Address after: 3 / F, unit 2, building 1, Yuehan international, 38 Jinye Road, high tech Zone, Xi'an, Shaanxi 710000 Patentee after: XI'AN SIMUL ELECTRIC Co.,Ltd. Address before: 518000 second and third floors, No. 1301-8 sightseeing Road, dabuxiang community, Guanlan new area, Shenzhen, Guangdong Patentee before: SHENZHEN SIMUL YINXING ELECTRICAL CO.,LTD. |