CN103673864A - Strain meter using silicon-germanium heterojunction nanowire arrays as sensitive elements and preparation method of strain meter - Google Patents
Strain meter using silicon-germanium heterojunction nanowire arrays as sensitive elements and preparation method of strain meter Download PDFInfo
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Abstract
The invention discloses a strain meter using silicon-germanium heterojunction nanowire arrays as sensitive elements. The strain meter comprises an silicon-on-insulator wafer and an oxide layer covering the silicon-on-insulator wafer. A deep groove is formed in the silicon-on-insulator wafer. The oxide layer is disposed on both the side wall and the bottom of the deep groove. Two windows for growing nanowire are respectively formed in the two opposite side walls of the deep groove. A tin nano-particle catalyst layer is disposed on each window. One silicon-germanium heterojunction nanowire array grows on each tin nano-particle catalyst layer. The two opposite windows are connected through the silicon-germanium heterojunction nanowire arrays. The strain meter using the silicon-germanium heterojunction nanowire arrays as the sensitive elements has the advantages that the sensitivity of sensitivity sources is increased. In the mean time, the invention further discloses a preparation method of the strain meter, and the preparation method is simple and compatible with the existing integrated circuit processes.
Description
Technical field
The present invention relates to a kind of naiio-electro-meclianical systems (is called for short: NEMS) sensor sensing element, specifically, relates to a kind of silicon germanium heterojunction nano-wire array and take into account preparation method as the strain of sensitive element.
Background technology
The nano wire of nano wire, especially semiconductor material, due to silicon materials, the germanium material importance in current integrated circuit fields, and the compatibility of preparation technology and ripe microelectronic technique enjoys the concern of scientists.At present, the nano wire of various materials has huge application space in different field, as light emitting diode (LED), sun power, sensor field.Simultaneously, the development of Mechatronic Systems (NEMS) technology received has reduced the size of pressure transducer greatly, simultaneously due to the restriction effect under nanoscale, nano material as responsive source has the excellent properties not having under micro-meter scale, thereby greatly promoted the sensitivity in responsive source, for follow-on pressure transducer provides material support.And, along with the extensive concern of silicon germanium heterojunction nano wire, the studied discovery gradually of its excellent performance.
The semiconductor nano material of one-component, although also there is the piezoresistive effect larger than body material, but surface is passivated in manufacturing process conventionally, thereby make to cause key factor---the remarkable minimizing of surface state of huge piezoresistive effect under nanoscale, thereby greatly reduced piezoresistive effect.Conventionally in application process, adopt many group nano wires as responsive source, to promote the sensitivity of strainometer simultaneously.Silicon germanium heterojunction nano wire, due to the lattice mismatch of SiGe bi-material, adds that quantum limitation effect often shows excellent performance.Due in technique with the compatibility of the integrated circuit technology of current main flow, adopt nano wire as strainometer sensitive element than other optics or magnetomotive material more easily and integrated, so, be a kind of ideal material of strainometer.
Summary of the invention
technical matters:technical matters to be solved by this invention is: the strainometer of a kind of silicon germanium heterojunction nano-wire array as sensitive element is provided, this strainometer adopts silicon germanium heterojunction nano-wire array as sensitive element, improve the sensitivity of responsive source, simultaneously, the preparation method of this strainometer is also provided, this preparation method is simple, and has compatibility with existing integrated circuit technology.
technical scheme:for solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of silicon germanium heterojunction nano-wire array is as the strainometer of sensitive element, this strainometer comprises silicon-on-insulator disk, and cover the oxide layer on silicon-on-insulator disk, on silicon-on-insulator disk, have deep trouth, and sidewall and the bottom surface of deep trouth are equipped with oxide layer, on two relative sidewalls of deep trouth, be respectively equipped with the window of a grow nanowire, this window is provided with sijna rice grain catalyst layer, grown silicon silicon-germanium heterojunction nano-wire array on sijna rice grain catalyst layer, two grow nanowire and relative window are connected by this silicon germanium heterojunction nano-wire array.
Further: the every square micron of array density 20-70 of described silicon germanium heterojunction nano-wire array, the radius of the silicon germanium heterojunction nano wire in silicon germanium heterojunction nano-wire array is 20-80 nanometer.
Above-mentioned silicon germanium heterojunction nano-wire array is as a preparation method for the strainometer of sensitive element, and this preparation method comprises the following steps:
The first step, utilizes thermal oxidation process to form protection oxide layer at silicon-on-insulator disk upper surface, makes the silicon-on-insulator disk with oxide layer;
Second step, drives deep trouth: by photoetching and reactive ion etching method, on the silicon-on-insulator disk with oxide layer making, drive deep trouth in the first step;
The 3rd step, output the window of grow nanowire: utilize photoetching positioning process, remove be positioned on deep trouth two side for the oxide layer on the window of grow nanowire, form the window of grow nanowire; On deep trouth two side, all the other positions except window are all coated with oxide layer;
The 4th step, utilizes electro-deposition method, obtains sijna rice grain catalyst layer in the window surface of grow nanowire;
The 5th step, utilize solution vapor phase method, at the silicon germanium heterojunction nano wire of sijna rice grain catalyst layer surface synchronous growth abrupt interface, make silicon germanium heterojunction nano-wire array, make by silicon germanium heterojunction nano-wire array, to be connected between the window of the grow nanowire on deep trouth two side.
Further, the preparation method of the silicon germanium heterojunction nano wire in the 5th described step comprises the following steps:
Step 501) at 450-470 ℃, the stupid silane of thermal decomposition produces silane gas, and as front conductive gas, before utilizing, conductive gas is in sijna rice grain catalyst layer surface grown silicon nanometer fragment;
Step 502) cool the temperature to 420-440 ℃, stop the growth of silicon nanometer fragment, inject triphenyl germane liquid in flask, thermal decomposition produces Germane gas simultaneously, as the front conductive gas of germanium nanometer fragment, and the germanium nanometer of growing in silicon nanometer fragment fragment;
Step 503) repeating step 501 periodically) and step 502), form the silicon germanium heterojunction nano wire of abrupt interface, until the window of the grow nanowire on this silicon germanium heterojunction nano wire connection deep trouth two side.
Further, described second step comprises following process: step 201) adopt reactive ion etching process, in the upper etching of silicon-on-insulator disk (1), form deep trouth, make the surplus 300-500 nanometer thickness of silicon layer in silicon-on-insulator disk (1), step 202) utilize thermal oxidation technology, make whole silicon-on-insulator disk (1) cover layer of oxide layer, step 203) utilize reactive ion etching process, adopt hydrofluoric acid solution, remove the oxide layer of deep trouth bottom, step 204) primary first-order equation ion etching is carried out in deep trouth bottom, removal is arranged in the part silicon of silicon-on-insulator disk (1) silicon layer of deep trouth below, make the both sides of deep trouth bottom reserve the silicon that thickness is 200-400 nanometer, step 205) utilize thermal oxidation technology, on the bottom and sidewall of deep trouth, form the oxide layer of 30-60 nano thickness.
Further, in the 4th described step, it is in the microemulsion that forms of 1:6-15 according to volume ratio that silicon-on-insulator disk is immersed in by mixed aqueous solution and surfactant solution, wherein, mixed aqueous solution is that the tin-salt solution of 0.01-0.05 mol/L and hydrofluoric acid solution that volumetric molar concentration is 0.2-0.4 mol/L form by volumetric molar concentration, surfactant solution is mixed and is formed by Maleic Acid Diisooctyl sulfonate and n-heptane solution, the surfactant solution that formation volumetric molar concentration is 0.2-0.4mol/L; At room temperature, to the ultrasonic processing of microemulsion 20-40 minute, forming radius is the sijna rice grain catalyst layer of 5-10 nanometer, the every square micron of its density 500-1200.
beneficial effect:compared with prior art, the present invention has following beneficial effect:
1. sensitivity and noise resisting ability improve.In NEMS technical field, use photoetching, reactive ion etching technology on silicon SOI disk, to output deep trouth, and on side wall, locate nanowire growth window, then make Means of Electrodeposition, deposit highdensity sijna rice grain, use SVG method grown silicon silicon-germanium heterojunction nano wire.Due to grown silicon germanium wafer section time adopted different temperature, the nano wire obtaining like this, sige interface sudden change Chengdu is high, large compared with silicon nanowires, silicon/silicon germanium heterojunction nanostructured piezoresistance coefficient, meanwhile, the nano-wire array density obtaining is high.This effectively raises the sensitivity of strainometer, noise resisting ability, and reduced resistance.
2. in the present invention, the substrate of grown silicon silicon-germanium heterojunction nanometer adopts (110) SOI disk, and this disk has highly doped P type Si(110) device layer, resistivity is less than 0.1 Ω * cm.Utilize photoetching and follow-up reactive ion etching fluting, between both walls, be oriented to <111> direction, and the width of deep trouth can well be controlled the length of nano wire.Width between side wall is the length of nano wire, can well guarantee the consistance of nano-wire array.
3. with low cost.In the present invention, adopt tin (Sn) as catalyzer, with low cost, and can meet efficiently the requirement of grown silicon and germanium nanometer fragment simultaneously.More crucial, the Silicon In Alloys forming in course of reaction, the ratio of Ge element are less than 1%.
4. the present invention uses photoetching locating open to go out the growth district of nano wire, and adopts deposited Au metal catalyst, has guaranteed a catalyzer area deposition at defined, and there will not be in oxide layer region.
Accompanying drawing explanation
Fig. 1 is the structural representation of strainometer of the present invention.
Fig. 2 is the position relationship schematic diagram of window and silicon germanium heterojunction nano-wire array in the present invention.
Fig. 3 is the growth schematic diagram of silicon germanium heterojunction nano-wire array in the present invention.
Fig. 4 is second step step 201 in preparation method of the present invention) structural representation.
Fig. 5 is second step step 202 in preparation method of the present invention) structural representation.
Fig. 6 is second step step 203 in preparation method of the present invention) structural representation.
Fig. 7 is second step step 204 in preparation method of the present invention) structural representation.
Fig. 8 is second step step 205 in preparation method of the present invention) structural representation.
In figure, have: silicon-on-insulator disk 1, window 2, the first side wall 3, the second side wall 4, silicon germanium heterojunction nano-wire array 5, sijna rice grain catalyst layer 6, silicon nanometer fragment 7, germanium nanometer fragment 8, oxide layer 9.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in detail.
As depicted in figs. 1 and 2, silicon germanium heterojunction nano-wire array of the present invention is as the strainometer of sensitive element, comprise silicon-on-insulator disk 1(silicon-on-insulator, Silicon on Insulator, in literary composition, be called for short: SOI), and cover the oxide layer 9 on silicon-on-insulator disk 1, on silicon-on-insulator disk 1, have deep trouth, and sidewall and the bottom surface of deep trouth are equipped with oxide layer, on two relative sidewalls of deep trouth, be respectively equipped with the window 2 of a grow nanowire, this window 2 is provided with sijna rice grain catalyst layer 6, grown silicon silicon-germanium heterojunction nano-wire array 5 on sijna rice grain catalyst layer 6, two grow nanowire and relative window 2 are connected by this silicon germanium heterojunction nano-wire array 5.
Further: the every square micron of array density 20-70 of described silicon germanium heterojunction nano-wire array 5, the radius of the silicon germanium heterojunction nano wire in silicon germanium heterojunction nano-wire array 5 is 20-80 nanometer.
Above-mentioned silicon germanium heterojunction nano-wire array, as the preparation method of the strainometer of sensitive element, comprises the following steps:
The first step, utilizes thermal oxidation process to form protection oxide layer at silicon-on-insulator disk 1 upper surface, makes the silicon-on-insulator disk with oxide layer;
Second step, drives deep trouth: by photoetching and reactive ion etching method, on the silicon-on-insulator disk with oxide layer making, drive deep trouth in the first step.
Second step specifically comprises following process: step 201), as shown in Figure 4, adopt reactive ion etching process, on silicon-on-insulator disk 1, etching forms deep trouth, makes the surplus 300-500 nanometer thickness of silicon layer in silicon-on-insulator disk 1; Step 202), as shown in Figure 5, utilize thermal oxidation technology, make whole silicon-on-insulator disk 1 cover layer of oxide layer; Step 203), as shown in Figure 6, utilize reactive ion etching process, adopt hydrofluoric acid solution, remove the oxide layer of deep trouth bottom; Step 204), as shown in Figure 7, primary first-order equation ion etching is carried out in deep trouth bottom, remove the part silicon of silicon-on-insulator disk 1 silicon layer that is arranged in deep trouth below, make the both sides of deep trouth bottom reserve the silicon that thickness is 200-400 nanometer; Step 205), as shown in Figure 8, utilize thermal oxidation technology, on the bottom and sidewall of deep trouth, form the oxide layer of 30-60 nano thickness.
The 3rd step, output the window 2 of grow nanowire: utilize photoetching positioning process, remove be positioned on deep trouth two side for the oxide layer on the window of grow nanowire, form the window 2 of grow nanowire; On deep trouth two side, all the other positions except window 2 are all coated with oxide layer.
The 4th step, utilizes electro-deposition method, on window 2 surfaces of grow nanowire, obtains sijna rice grain catalyst layer 6.
In above-mentioned the 4th step, it is in the microemulsion that forms of 1:6-15 according to volume ratio that silicon-on-insulator disk 1 is immersed in by mixed aqueous solution and surfactant solution, wherein, mixed aqueous solution is that the tin-salt solution of 0.01-0.05 mol/L and hydrofluoric acid solution that volumetric molar concentration is 0.2-0.4 mol/L form by volumetric molar concentration, surfactant solution is mixed and is formed by Maleic Acid Diisooctyl sulfonate and n-heptane solution, the surfactant solution that formation volumetric molar concentration is 0.2-0.4mol/L; At room temperature, to the ultrasonic processing of microemulsion 20-40 minute, forming radius is the sijna rice grain catalyst layer of 5-10 nanometer, the every square micron of its density 500-1200.
The 5th step, utilize solution vapor phase method, at the silicon germanium heterojunction nano wire of sijna rice grain catalyst layer 6 surperficial synchronous growth abrupt interfaces, make silicon germanium heterojunction nano-wire array 5, make by silicon germanium heterojunction nano-wire array 5, to be connected between the window 2 of the grow nanowire on deep trouth two side.
As shown in Figure 3, in above-mentioned the 5th step, the preparation method of silicon germanium heterojunction nano wire comprises the following steps:
Step 501) at 450-470 ℃, the stupid silane of thermal decomposition (PS) produces silane gas, and as front conductive gas, before utilizing, conductive gas is in sijna rice grain catalyst layer 6 superficial growth silicon nanometer fragments 7;
Step 502) cool the temperature to 420-440 ℃, stop the growth of silicon nanometer fragment 7, inject triphenyl germane liquid in flask, thermal decomposition produces Germane gas simultaneously, as the front conductive gas of germanium nanometer fragment 8, and the germanium nanometer of growing in silicon nanometer fragment 7 fragment 8;
Step 503) repeating step 501 periodically) and step 502), form the silicon germanium heterojunction nano wire of abrupt interface, until the window 2 of the grow nanowire on this silicon germanium heterojunction nano wire connection deep trouth two side.
Embodiment
Utilize above-mentioned preparation method to prepare strainometer:
1) prepare SOI substrate: select P type heavy doping device layer SOI substrate, wherein device layer thickness is 1.6 microns, and resistivity is less than 0.1 Ω * cm, and buried oxide is 2.0 microns;
2) thermal oxide: obtaining thickness at SOI substrate surface is the oxide layer of 600 nanometers;
3) photoetching: remove between the first side wall 3 and the second side wall 4 and obtain oxide layer;
4) reactive ion etching: output deep trouth on SOI substrate, now, device layer is surplus 400 nanometer thickness also; The first side wall 3 on SOI substrate, the second side wall 4 are separated by deep trouth;
5) thermal oxide for the second time: obtaining thickness is the oxide layer of 200 nanometers, device layer is surplus 300 nanometer thickness also;
6) photoetching: remove oxide layer on residual device layer;
7) reactive ion etching for the second time: etch away the device layer between both walls completely, now, 300 nanometer thickness regions, side wall below are capping oxidation layer not;
8) thermal oxide for the third time: bare silicon local forms 50 nanometer thin oxide layers below side wall;
9) photoetching: utilize hydrofluoric acid solution to remove the thin oxide layer of grow nanowire regional window;
10) electro-deposition sijna rice grain: in deposition process, substrate is immersed in the microemulsion that contains tin-salt solution, hydrofluoric acid solution and surfactant, under room temperature, ultrasonic processing is 30 minutes, and forming radius is the particle of 5-10 nanometer;
11) solution vapor phase method grown silicon silicon-germanium heterojunction nano-wire array: first, grown silicon fragment 7, temperature is 460 ℃, conductive gas before thermal decomposition phenylsilane produces, 5-20 minute, then cool the temperature to 430 ℃, then inject three phenylsilanes, growth germanium wafer section, 5-20 minute, periodically grown silicon fragment and germanium wafer section subsequently, until nano wire and opposite side wall are assembled into merit.
In technique scheme, prepare described silicon germanium heterojunction nano-wire array and adopt photoetching auxiliary positioning growth district, and efficient solution vapor phase growth (SVG) method of profit: etching forms the deep trouth of specific dimensions on SOI silicon wafer, and outputs in the region of grown silicon Ge nanoline array the silicon area that there is no capping oxidation layer.In the deoxidation of the 3rd step, use buffered hydrofluoric acid (BHF) solution, and well control etching time, make to remove the oxide layer in grow nanowire region, other regions still have the covering of oxide layer.Utilize the zinc-plated nano particle of electro-deposition method, as grow nanowire catalyzer, in deposition process, substrate is immersed in the microemulsion that contains tin-salt solution, hydrofluoric acid solution and surfactant, under room temperature, ultrasonic processing is 30 minutes, and forming radius is the particle of 5-10 nanometer.In the 5th step, the temperature of grow silicon nanowires fragment is at 460 ℃, in more conventional vapour-liquid-solid growth (VLS) method, utilize gold low 300 ℃ as the temperature of catalyzer grow nanowire, leading gas silane thermal decomposition phenylsilane (PS) in grower produces.Along with the growth of silicon fragment, cool the temperature to 430 ℃ to stop the growth of silicon nanometer fragment, prevent that remaining silane from continuing to react to guarantee the purity of germanium nanometer fragment, obtains good abrupt interface with this.Simultaneously to inject in device triphen germane (English full name: triphenyl germane, in literary composition, be called for short: TPG), at 430 ℃, TPG decomposes the germane that produces growing Ge nanoline.Repeating above process, until nanowire growth is to the side wall on opposite.
Strainometer based on silicon germanium heterojunction nano-wire array of the present invention comprises SOI substrate, two parts of silicon germanium heterojunction nano-wire array.On SOI substrate, below deep trouth, having grow nanowire array region, nano-wire array is silicon germanium heterojunction nano-wire array.By two parts of self assembly, form reliable connection.This strainometer is experienced the variation of the suffered stress of device by SiGe nano-wire array, be reflected as the variation of electrical parameter, thereby realize highly sensitive strainometer via electrode output.The silicon germanium heterojunction nano thread structure of the abrupt interface that the present invention adopts, the piezoresistance coefficient of this structure is larger than the piezoresistance coefficient of silicon materials, and then sensitivity is improved.Adding that array structure has improved the sensing capability that counter stress changes.Because silicon germanium heterojunction nano-wire array is in parallel, thereby improved the size that integrated electronic parameter changes, and then the interference of noise is died down.
The present invention utilizes silicon germanium heterojunction nanowire array structure as the strainometer of sensitive element, with this, obtains high piezoresistance coefficient, high noise resisting ability, high sensitivity.
Claims (6)
1. a silicon germanium heterojunction nano-wire array is as the strainometer of sensitive element, it is characterized in that, this strainometer comprises silicon-on-insulator disk (1), and cover the oxide layer (9) on silicon-on-insulator disk (1), silicon-on-insulator disk has deep trouth on (1), and sidewall and the bottom surface of deep trouth are equipped with oxide layer, on two relative sidewalls of deep trouth, be respectively equipped with the window (2) of a grow nanowire, this window (2) is provided with sijna rice grain catalyst layer (6), the upper grown silicon silicon-germanium heterojunction nano-wire array (5) of sijna rice grain catalyst layer (6), two grow nanowire and relative window (2) are connected by this silicon germanium heterojunction nano-wire array (5).
2. silicon germanium heterojunction nano-wire array according to claim 1 is as the strainometer of sensitive element, it is characterized in that: the every square micron of array density 20-70 of described silicon germanium heterojunction nano-wire array (5), the radius of the silicon germanium heterojunction nano wire in silicon germanium heterojunction nano-wire array (5) is 20-80 nanometer.
3. silicon germanium heterojunction nano-wire array claimed in claim 1, as a preparation method for the strainometer of sensitive element, is characterized in that, this preparation method comprises the following steps:
The first step, utilizes thermal oxidation process to form protection oxide layer at silicon-on-insulator disk (1) upper surface, makes the silicon-on-insulator disk with oxide layer;
Second step, drives deep trouth: by photoetching and reactive ion etching method, on the silicon-on-insulator disk with oxide layer making, drive deep trouth in the first step;
The 3rd step, output the window (2) of grow nanowire: utilize photoetching positioning process, remove be positioned on deep trouth two side for the oxide layer on the window of grow nanowire, form the window (2) of grow nanowire; On deep trouth two side, all the other positions except window (2) are all coated with oxide layer;
The 4th step, utilizes electro-deposition method, on window (2) surface of grow nanowire, obtains sijna rice grain catalyst layer (6);
The 5th step, utilize solution vapor phase method, silicon germanium heterojunction nano wire at the surperficial synchronous growth abrupt interface of sijna rice grain catalyst layer (6), make silicon germanium heterojunction nano-wire array (5), make by silicon germanium heterojunction nano-wire array (5), to be connected between the window (2) of the grow nanowire on deep trouth two side.
4. silicon germanium heterojunction nano-wire array according to claim 3, as the preparation method of the strainometer of sensitive element, is characterized in that, the preparation method of the silicon germanium heterojunction nano wire in the 5th described step comprises the following steps:
Step 501) at 450-470 ℃, the stupid silane of thermal decomposition produces silane gas, and as front conductive gas, before utilizing, conductive gas is in sijna rice grain catalyst layer (6) superficial growth silicon nanometer fragment (7);
Step 502) cool the temperature to 420-440 ℃, stop the growth of silicon nanometer fragment (7), inject triphenyl germane liquid in flask, thermal decomposition produces Germane gas simultaneously, as the front conductive gas of germanium nanometer fragment (8), in the upper growth of silicon nanometer fragment (7) germanium nanometer fragment (8);
Step 503) repeating step 501 periodically) and step 502), form the silicon germanium heterojunction nano wire of abrupt interface, until the window (2) of the grow nanowire on this silicon germanium heterojunction nano wire connection deep trouth two side.
5. silicon germanium heterojunction nano-wire array according to claim 3 is as the preparation method of the strainometer of sensitive element, it is characterized in that, described second step comprises following process: step 201) adopt reactive ion etching process, in the upper etching of silicon-on-insulator disk (1), form deep trouth, make the surplus 300-500 nanometer thickness of silicon layer in silicon-on-insulator disk (1), step 202) utilize thermal oxidation technology, make whole silicon-on-insulator disk (1) cover layer of oxide layer, step 203) utilize reactive ion etching process, adopt hydrofluoric acid solution, remove the oxide layer of deep trouth bottom, step 204) primary first-order equation ion etching is carried out in deep trouth bottom, removal is arranged in the part silicon of silicon-on-insulator disk (1) silicon layer of deep trouth below, make the both sides of deep trouth bottom reserve the silicon that thickness is 200-400 nanometer, step 205) utilize thermal oxidation technology, on the bottom and sidewall of deep trouth, form the oxide layer of 30-60 nano thickness.
6. according to claim 3, silicon germanium heterojunction nano-wire array described in 4 or 5 is as the preparation method of the strainometer of sensitive element, it is characterized in that, in the 4th described step, it is in the microemulsion that forms of 1:6-15 according to volume ratio that silicon-on-insulator disk (1) is immersed in by mixed aqueous solution and surfactant solution, wherein, mixed aqueous solution is that the tin-salt solution of 0.01-0.05 mol/L and hydrofluoric acid solution that volumetric molar concentration is 0.2-0.4 mol/L form by volumetric molar concentration, surfactant solution is mixed and is formed by Maleic Acid Diisooctyl sulfonate and n-heptane solution, the surfactant solution that formation volumetric molar concentration is 0.2-0.4mol/L, at room temperature, to the ultrasonic processing of microemulsion 20-40 minute, forming radius is the sijna rice grain catalyst layer of 5-10 nanometer, the every square micron of its density 500-1200.
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| CN106895886A (en) * | 2017-04-13 | 2017-06-27 | 南京信息工程大学 | High sensitivity gas flow surveying instrument and method based on huge piezoresistance sensor |
| CN111195733A (en) * | 2018-11-19 | 2020-05-26 | 本田技研工业株式会社 | General synthetic strategies for fabricating multi-metallic nanostructures |
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