CN103668444A - Method and device for growing CdS single crystal - Google Patents
Method and device for growing CdS single crystal Download PDFInfo
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- CN103668444A CN103668444A CN201210359321.1A CN201210359321A CN103668444A CN 103668444 A CN103668444 A CN 103668444A CN 201210359321 A CN201210359321 A CN 201210359321A CN 103668444 A CN103668444 A CN 103668444A
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Abstract
The invention discloses a method and a device for growing a CdS single crystal. The method comprises the steps of putting a seed crystal of the CdS single crystal on a polished wafer, and then putting the polished wafer on a supporting platform; putting CdS powder and a low-resistance doping agent into a crucible, wherein the crucible is placed in a reaction tube which is positioned on the supporting platform, and an outer tube is arranged on the outer side of the reaction tube and is arranged in a heating furnace; vacuumizing the inside of the reaction tube, and introducing carrier gas into the reaction tube; raising the temperature of a growing zone to 950-1015 DEG C and the temperature of a source zone to 1000-1055 DEG C, growing the CdS single crystal, cooling the temperature in the furnace to room temperature after growing, and taking out the grown CdS single crystal. The device comprises the polished wafer, the supporting platform, the crucible, the reaction tube, the outer tube and the heating furnace. By adopting the method and the device, the growth rate of the CdS single crystal is controlled by adjusting and controlling the temperatures of the growing zone and the source zone, so that a relatively small stress is generated by the CdS single crystal, and a large-size CdS single crystal relatively high in quality is obtained.
Description
Technical field
The present invention relates to field of semiconductor materials, relate in particular to a kind of CdS method for monocrystal growth and device.
Background technology
Cadmium Sulfide (CdS) monocrystalline is direct transition type II-VI compound semiconductor, and it is a kind of good window material and buffer layer material, is commonly used to make photochemical catalysis, semiconducter device, luminescent device, laser and photosensor.Meanwhile, this material also has efficiently infrared seeing through with ultraviolet and experiences sensitive characteristic, is the preferred material of making infrared/ultraviolet two-color lamination guidance detector, has important Military Application prospect and status.
Gas phase transportation act (PVT method) is one of main method of preparation CdS monocrystal material, and the method principle is: CdS powder distils in high temperature source region, arrives low-temperature epitaxy district and sublimate after transporting, and forms single crystal growing.But there is larger stress in the CdS monocrystalline crystals that existing PVT method is produced, causes post-production yield rate low, affects monocrystalline crystal ingot quality.
Summary of the invention
In view of above-mentioned analysis, the present invention aims to provide a kind of CdS method for monocrystal growth and device, in order to solve CdS monocrystalline crystals in prior art, has larger stress, causes the problem that post-production yield rate is low.
Object of the present invention is mainly achieved through the following technical solutions:
A CdS method for monocrystal growth, comprising:
CdS single crystal seed is placed in polished section, then this polished section is placed on brace table;
CdS powder and low-resistance doping agent are put into crucible, and described crucible is held in place in the reaction tubes on described brace table, and the outside of described reaction tubes is provided with outer tube;
Described outer tube is located in process furnace, will in described outer tube, vacuumize, and pass into carrier gas in described outer tube;
Vitellarium temperature is risen to 950-1015 degree, and source region temperature rises to 1000-1055 degree, carries out CdS single crystal growing;
After growth finishes, temperature in stove is down to room temperature, takes out the CdS monocrystalline after growth.
Preferably, described polished section and described brace table adopt quartz, sapphire or carbofrax material to make.
Preferably, described reaction tubes and described outer tube adopt quartz material to make.
Preferably, described low-resistance doping agent comprises one or more mixtures in In, Zn and Cd.
Preferably, described carrier gas is high-purity rare gas element, and the pressure in described reaction tubes is 100-800 milli handkerchief.
Preferably, the temperature head in described vitellarium and source region is 10-50 degree.
Preferably, the temperature head in described vitellarium and source region is 15 degree.
The present invention also provides a kind of CdS single-crystal growing apparatus, and this device comprises:
Polished section, for placing CdS single crystal seed;
Brace table, for placing described polished section;
Crucible, for holding CdS powder and low-resistance doping agent;
Reaction tubes, packs the described crucible of CdS powder and low-resistance doping agent and the outside of described CdS single crystal seed into for being enclosed within;
Outer tube, for being enclosed within the periphery of described reaction tubes and described brace table, passes into carrier gas after vacuumizing;
Process furnace, for reaction tubes is heated, rises to 950-1015 degree by vitellarium temperature, and source region temperature rises to 1000-1055 degree, carries out CdS single crystal growing.
Preferably, described brace table is cylindrical, and it is highly 20-150 millimeter, and diameter is 20-80 millimeter, and with the contact surface of polished section be polished surface.
Preferably, two surfaces up and down of described polished section are polished surface.
Beneficial effect of the present invention is as follows:
A kind of CdS method for monocrystal growth provided by the invention and device, due to described brace table and polished section employing quartz, sapphire or carbofrax material are made, make the heat of CdS monocrystalline be transmitted to outside by polished section and brace table, the radial symmetry gradient of CdS monocrystalline is larger, being beneficial to CdS monocrystalline grows diametrically, by the temperature in regulation and control vitellarium and source region, thereby control CdS single crystal growing speed, closely make CdS monocrystalline produce less stress, can also effectively control the defect of seed crystal itself, the heredity of low angle boundary etc., thereby obtain the higher large size CdS monocrystalline of quality.
Other features and advantages of the present invention will be set forth in the following description, and, the becoming apparent from specification sheets of part, or understand by implementing the present invention.Object of the present invention and other advantages can be realized and be obtained by specifically noted structure in the specification sheets write, claims and accompanying drawing.
Accompanying drawing explanation
Fig. 1 is the schema of the CdS method for monocrystal growth of the embodiment of the present invention 1;
Fig. 2 is the schema of the CdS method for monocrystal growth of the embodiment of the present invention 2;
Fig. 3 is the schematic diagram of the CdS single-crystal growing apparatus of the embodiment of the present invention 3.
Embodiment
Below in conjunction with accompanying drawing, specifically describe the preferred embodiments of the present invention, wherein, accompanying drawing forms the application's part, and together with embodiments of the present invention for explaining principle of the present invention.
Embodiment 1
The embodiment of the present invention provides a kind of CdS method for monocrystal growth, and referring to Fig. 1, the method comprises:
S101, CdS single crystal seed is placed in polished section, then this polished section is placed on brace table;
Adopt polished section can conveniently pick and place described CdS monocrystalline, and after having simplified each CdS single crystal growing, the processing of brace table is operated.
S102, CdS powder and low-resistance doping agent are put into crucible, described crucible is held in place in the reaction tubes on described brace table, and the outside of described reaction tubes is provided with outer tube;
S103, described outer tube are located in process furnace, will in described outer tube, vacuumize, and pass into carrier gas in described outer tube;
S104, vitellarium temperature is risen to 950-1015 degree, source region temperature rises to 1000-1055 degree, carries out CdS single crystal growing;
After S105, growth finish, temperature in stove is down to room temperature, takes out the CdS monocrystalline after growth.
A kind of CdS method for monocrystal growth that the embodiment of the present invention provides, due to described brace table and polished section employing quartz, sapphire or carbofrax material are made, make the heat of CdS monocrystalline be transmitted to outside by polished section and brace table, the radial symmetry gradient of CdS monocrystalline is larger, being beneficial to CdS monocrystalline grows diametrically, again by the temperature in regulation and control vitellarium and source region, thereby control CdS single crystal growing speed, closely make CdS monocrystalline produce less stress, can also effectively control the defect of seed crystal itself, the heredity of low angle boundary etc., thereby obtain the higher CdS monocrystalline of quality.
Embodiment 2
The embodiment of the present invention provides a kind of CdS method for monocrystal growth, and referring to Fig. 2, the method comprises:
S201, CdS single crystal seed is placed in polished section, then this polished section is placed on brace table;
The diameter of the CdS single crystal seed of the embodiment of the present invention is more than or equal to 5mm.
S202, CdS powder and low-resistance doping agent are put into crucible, described crucible is held in place in the reaction tubes on described brace table, and the outside of described reaction tubes is provided with outer tube;
Described polished section and described brace table adopt quartz, sapphire or carbofrax material to make, and make the heat of CdS monocrystalline be transmitted to outside by polished section and brace table, and the radial symmetry gradient of CdS monocrystalline is larger, is beneficial to CdS monocrystalline and grows diametrically.
Described reaction tubes and described outer tube adopt quartz material to make.
Described low-resistance doping agent comprises one or more mixtures in In, Zn and Cd.
The distance of crucible and CdS single crystal seed remains on 5-20 centimetre, and this distance range can effectively guarantee the adjustment of source region and vitellarium temperature, and distance is too large, just needs the control of larger reaction tubes, outer tube and process furnace; Distance is too small, can not effectively guarantee source region and vitellarium temperature head, thereby can not effectively guarantee the realization of gas phase transporting method.
S203, described outer tube are located in process furnace, will in described outer tube, vacuumize, and pass into carrier gas in described outer tube, and described carrier gas is high-purity rare gas element, and the pressure in described reaction tubes is 100-800 milli handkerchief;
S204, vitellarium temperature is risen to 950-1015 degree, source region temperature rises to 1000-1055 degree, carries out CdS single crystal growing, and the temperature head in described vitellarium and source region is 10-50 degree;
Within the scope of this temperature head, can guarantee that source region is that in crucible, CdS can distil, can guarantee again in vitellarium to be that in the seed crystal district of CdS monocrystalline, CdS can deposit, and the speed of growth of CdS monocrystalline can be too not fast within the scope of this temperature head, the stress producing is less, can also control by temperature the heredity of the defect, low angle boundary etc. of seed crystal itself.The temperature head that experiment records described vitellarium and source region is 15 while spending, and CdS monocrystalline can either well be grown, and stress of its inner generation is very little.
After S205, growth finish, temperature in stove is down to room temperature, takes out the CdS monocrystalline after growth.
A kind of CdS method for monocrystal growth that the embodiment of the present invention provides, because adopting quartzy, sapphire or carbofrax material, described brace table and polished section make, make the heat of CdS monocrystalline be transmitted to outside by polished section and brace table, the radial symmetry gradient of CdS monocrystalline is larger, be beneficial to CdS monocrystalline and grow diametrically, and the temperature head in vitellarium and source region is 10-50 degree.Within the scope of this temperature head, can guarantee that source region is that in crucible, CdS can distil, can guarantee again in vitellarium to be that in the seed crystal district of CdS monocrystalline, CdS can deposit, and the speed of growth of CdS monocrystalline can be too not fast within the scope of this temperature head, the stress producing is less, can also control by temperature the heredity of the defect, low angle boundary etc. of seed crystal itself, thereby obtain the higher CdS monocrystalline of quality.
Embodiment 3
The embodiment of the present invention provides a kind of CdS single-crystal growing apparatus, and referring to Fig. 3, this device comprises:
Polished section 31, for placing CdS single crystal seed 30;
Two surfaces up and down of described polished section are polished surface, adopt polished section can conveniently pick and place described CdS monocrystalline, and after having saved each CdS single crystal growing, the processing of brace table are operated.
Brace table 32, for placing described polished section;
Described brace table is cylindrical, and it is highly 20-150 millimeter, and diameter is 20-80 millimeter, and with the contact surface of polished section be polished surface.
Wherein, because described brace table and polished section adopt quartzy, sapphire or carbofrax material, make, make the heat of CdS monocrystalline be transmitted to outside by polished section and brace table, the radial symmetry gradient of CdS monocrystalline is larger, is beneficial to CdS monocrystalline and grows diametrically.
Crucible 33, for holding CdS powder and low-resistance doping agent;
Reaction tubes 34 is for packing crucible and the CdS single crystal seed of CdS powder and low-resistance doping agent described in holding into;
Wherein, described low-resistance doping agent comprises one or more mixtures in In, Zn and Cd.
In reaction tubes, the temperature head in vitellarium and source region is 10-50 degree, in the scope of this temperature head, can control CdS single crystal growing speed, closely make CdS monocrystalline produce less stress, can also effectively control the heredity of the defect, low angle boundary etc. of seed crystal itself, thereby obtain the higher CdS monocrystalline of quality.
Outer tube 35, for being enclosed within the periphery of described reaction tubes and described brace table, passes into carrier gas after vacuumizing;
Process furnace 36, for reaction tubes is heated, rises to 950-1015 degree by vitellarium temperature, and source region temperature rises to 1000-1055 degree, carries out CdS single crystal growing.
A kind of CdS single-crystal growing apparatus that the embodiment of the present invention provides, due to described brace table and polished section employing quartz, sapphire or carbofrax material are made, make the heat of CdS monocrystalline be transmitted to outside by polished section and brace table, the radial symmetry gradient of CdS monocrystalline is larger, being beneficial to CdS monocrystalline grows diametrically, again by the temperature in regulation and control vitellarium and source region, thereby control CdS single crystal growing speed, closely make CdS monocrystalline produce less stress, can also effectively control the defect of seed crystal itself, the heredity of low angle boundary etc., thereby obtain the higher CdS monocrystalline of quality.
In sum, the embodiment of the present invention provides a kind of CdS method for monocrystal growth and device, at least can bring following a kind of beneficial effect:
1) embodiment of the present invention provides a kind of CdS method for monocrystal growth and device, because adopting quartzy, sapphire or carbofrax material, described brace table and polished section make, make the heat of CdS monocrystalline be transmitted to outside by polished section and brace table, the radial symmetry gradient of CdS monocrystalline is larger, being beneficial to CdS monocrystalline grows diametrically, obtain large size CdS monocrystal material, and the stress that CdS monocrystalline produces is less;
2) embodiment of the present invention provides a kind of CdS method for monocrystal growth and device, the temperature head in vitellarium and source region is 10-50 degree, within the scope of this temperature head, can guarantee that source region is that in crucible, CdS can distil, can guarantee again in vitellarium to be that in the seed crystal district of CdS monocrystalline, CdS can deposit, and the speed of growth of CdS monocrystalline can be too not fast within the scope of this temperature head, the stress producing is less, can also control by temperature the heredity of the defect, low angle boundary etc. of seed crystal itself, thereby obtain the higher CdS monocrystalline of quality.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (10)
1. a CdS method for monocrystal growth, is characterized in that, comprising:
CdS single crystal seed is placed in polished section, then this polished section is placed on brace table;
CdS powder and low-resistance doping agent are put into crucible, and described crucible is held in place in the reaction tubes on described brace table, and the outside of described reaction tubes is provided with outer tube;
Described outer tube is located in process furnace, will in described outer tube, vacuumize, and pass into carrier gas in described outer tube;
Vitellarium temperature is risen to 950-1015 degree, and source region temperature rises to 1000-1055 degree, carries out CdS single crystal growing;
After growth finishes, temperature in stove is down to room temperature, takes out the CdS monocrystalline after growth.
2. method according to claim 1, is characterized in that, described polished section and described brace table adopt quartz, sapphire or carbofrax material to make.
3. method according to claim 1, is characterized in that, described reaction tubes and described outer tube adopt quartz material to make.
4. method according to claim 1, is characterized in that, described low-resistance doping agent comprises one or more mixtures in In, Zn and Cd.
5. according to the method described in claim 1-4 any one, it is characterized in that, described carrier gas is high-purity rare gas element, and the pressure in described reaction tubes is 100-800 milli handkerchief.
6. according to the method described in claim 1-4 any one, it is characterized in that, the temperature head in described vitellarium and source region is 10-50 degree.
7. method according to claim 6, is characterized in that, the temperature head in described vitellarium and source region is 15 degree.
8. a CdS single-crystal growing apparatus, is characterized in that, comprising:
Polished section, for placing CdS single crystal seed;
Brace table, for placing described polished section;
Crucible, for holding CdS powder and low-resistance doping agent;
Reaction tubes, packs the described crucible of CdS powder and low-resistance doping agent and the outside of described CdS single crystal seed into for being enclosed within;
Outer tube, for being enclosed within the periphery of described reaction tubes and described brace table, passes into carrier gas after vacuumizing;
Process furnace, for reaction tubes is heated, rises to 950-1015 degree by vitellarium temperature, and source region temperature rises to 1000-1055 degree, carries out CdS single crystal growing.
9. device according to claim 8, is characterized in that, described brace table is cylindrical, and it is highly 20-150 millimeter, and diameter is 20-80 millimeter, and with the contact surface of polished section be polished surface.
10. device according to claim 8 or claim 9, is characterized in that, two surfaces up and down of described polished section are polished surface.
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| CN201210359321.1A CN103668444B (en) | 2012-09-24 | 2012-09-24 | CdS method for monocrystal growth and device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213197A (en) * | 2014-09-24 | 2014-12-17 | 中国电子科技集团公司第四十六研究所 | In-situ doping method for preparing semiconductor monocrystal material by physical vapor transport (PVT) method |
| CN104962997A (en) * | 2015-07-15 | 2015-10-07 | 中国电子科技集团公司第四十六研究所 | Annealing technique for obtaining low-resistance CdS wafer |
| CN106319633A (en) * | 2016-11-02 | 2017-01-11 | 中国电子科技集团公司第四十六研究所 | Large-size high-infrared transmittance CdS single crystal growth method |
| CN108166063A (en) * | 2017-12-26 | 2018-06-15 | 哈尔滨工业大学 | A kind of selenizing Cd monocrystal method of vapor-phase growing of top seed crystal heat conduction |
| CN114134576A (en) * | 2021-12-02 | 2022-03-04 | 中国电子科技集团公司第四十六研究所 | Seed crystal processing method for low dislocation density CdS single crystal growth |
-
2012
- 2012-09-24 CN CN201210359321.1A patent/CN103668444B/en not_active Expired - Fee Related
Non-Patent Citations (3)
| Title |
|---|
| CHENG HONGJUAN ET AL: "Growth of CdS crystals by the physical vapor transport method", 《JOURNAL OF SEMICONDUCTORS》 * |
| YU.V. KOROSTELIN ET AL.: "Seeded-vapour-phase free growth and characterization of ZnTe single crystals", 《JOURNAL OF CRYSTAL GROWTH》 * |
| 李江波 等: "CdS掺杂研究进展", 《材料导报》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213197A (en) * | 2014-09-24 | 2014-12-17 | 中国电子科技集团公司第四十六研究所 | In-situ doping method for preparing semiconductor monocrystal material by physical vapor transport (PVT) method |
| CN104213197B (en) * | 2014-09-24 | 2017-06-16 | 中国电子科技集团公司第四十六研究所 | A kind of doping method in situ that semiconductor single crystal material is prepared for PVT methods |
| CN104962997A (en) * | 2015-07-15 | 2015-10-07 | 中国电子科技集团公司第四十六研究所 | Annealing technique for obtaining low-resistance CdS wafer |
| CN106319633A (en) * | 2016-11-02 | 2017-01-11 | 中国电子科技集团公司第四十六研究所 | Large-size high-infrared transmittance CdS single crystal growth method |
| CN108166063A (en) * | 2017-12-26 | 2018-06-15 | 哈尔滨工业大学 | A kind of selenizing Cd monocrystal method of vapor-phase growing of top seed crystal heat conduction |
| CN108166063B (en) * | 2017-12-26 | 2019-07-16 | 哈尔滨工业大学 | A kind of selenizing Cd monocrystal method of vapor-phase growing that top seed crystal is thermally conductive |
| CN114134576A (en) * | 2021-12-02 | 2022-03-04 | 中国电子科技集团公司第四十六研究所 | Seed crystal processing method for low dislocation density CdS single crystal growth |
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