CN103668088B - Improve the method for aluminium copper silicon quality of forming film - Google Patents
Improve the method for aluminium copper silicon quality of forming film Download PDFInfo
- Publication number
- CN103668088B CN103668088B CN201210342576.7A CN201210342576A CN103668088B CN 103668088 B CN103668088 B CN 103668088B CN 201210342576 A CN201210342576 A CN 201210342576A CN 103668088 B CN103668088 B CN 103668088B
- Authority
- CN
- China
- Prior art keywords
- aluminium
- silicon
- film forming
- copper
- aluminium copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of method improving aluminium copper silicon quality of forming film, comprising: 1) film forming wafer is in the high temperature chamber of 350 ~ 450 DEG C, in the mode of physical sputtering, complete the filling perforation of aluminium copper silicon, make on film forming wafer, form aluminium silicon-copper films; 2) film forming wafer enters into cooling chamber, in 10 ~ 30 seconds, is cooled to less than 200 DEG C; 3) in the low temperature cavity of 150 ~ 250 DEG C, film forming wafer completes the growth of aluminium copper silicon metal wire.The present invention, under the prerequisite not affecting filling perforation effect, improves aluminium copper silicon quality of forming film, makes the plain conductor resistance of gained film forming wafer less, and has good stability, and improves device performance; Meanwhile, film forming wafer appearance and package quality is greatly improved.
Description
Technical field
The present invention relates to the processing method of the raising physics of metals sputtering filling perforation quality in a kind of semiconductor applications, particularly relate to a kind of method of novel raising aluminium copper silicon quality of forming film.
Background technology
Widely, especially at semiconductor applications, sputtering technology directly affects resistance and other physical propertys of semiconducter device to the application of physics of metals sputtering process for filling hole.Aluminium copper silicon high temperature (more than 400 DEG C) sputtering, as metal process for filling hole, because aluminium silicon-copper films contains a small amount of silicon and metallic copper, makes the film after sputtering greatly reduce metallic aluminium puncture, so receive much concern.But simultaneously, existing aluminium copper silicon physics process for filling hole growing film, due to the defect of technique itself, due to high temperature in film process, make a small amount of nonmetal silicon contained in aluminium silicon-copper films, in temperature-fall period, make the film surface after sputtering produce a large amount of silicon separate out, cause subsequent technique operation incomplete, namely cause the interconnected contact of metal line surface lattice, cause lattice amplification, present surfaceness and be deteriorated, metal wire resistance is seriously caused to increase, affect device performance, thus cause component failure, and have a strong impact on appearance of device (as shown in Figure 1).
Analyze according to the research discovery of many scholars and the binary phase diagram (as shown in Figure 2) of metallic aluminium and nonmetal silicon, when nonmetal silicon mixes with metallic aluminium, temperature is greatly about more than 350 DEG C time, mainly concentrate as metallic aluminium phase, when the temperature decreases, nonmetal silicon will manifest mutually, causes silicon to separate out.So the main path preventing silicon from separating out is exactly concentrate film forming under high temperature, maintain metallic aluminium phase, after metallic aluminium hardens completely, fast cooling, just can prevent silicon from separating out.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method of novel raising aluminium copper silicon quality of forming film.The method by improving existing technique, thus improves aluminium copper silicon quality of forming film, and under the prerequisite not affecting device property, reduces silicon and separate out, and improves yield and the visual appearance of device.
For solving the problems of the technologies described above, the method for raising aluminium copper silicon quality of forming film of the present invention, comprises step:
1) film forming wafer is in the high temperature chamber of 350 ~ 450 DEG C, in the mode of physical sputtering, completes the filling perforation of aluminium copper silicon, makes on film forming wafer, forms aluminium silicon-copper films;
2) film forming wafer enters into cooling chamber, in 10 ~ 30s(second) in, be quickly cooled to less than 200 DEG C;
3) in the low temperature cavity of 150 ~ 250 DEG C, film forming wafer completes the growth of aluminium copper silicon metal wire.
In described step 1), completing the filling perforation of aluminium copper silicon is in high temperature chamber, through 5 ~ 30s(second), complete the filling perforation of aluminium copper silicon; The thickness of aluminium silicon-copper films is 0.1 ~ 1 μm, and the silicone content in aluminium silicon-copper films is 0.9 ~ 1.1%, copper content is 0.43 ~ 0.57%.
Described step 2) in, the mode of cooling comprises: ventilation or pressurization.
In described step 3), the thickness of aluminium copper silicon metal wire is 1 ~ 10 μm, and the silicone content in aluminium copper silicon metal wire is 0.9 ~ 1.1%, copper content is 0.43 ~ 0.57%.
The present invention is by improving existing aluminium copper silicon film, namely the growth of the filling perforation of aluminium copper silicon and metal wire is completed by high/low temperature 2 step, under the prerequisite not affecting filling perforation effect, improve aluminium copper silicon quality of forming film, make the plain conductor resistance of gained film forming wafer less, and have good stability, at utmost improve device performance; Meanwhile, film forming wafer appearance and package quality is greatly improved.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is the OM(opticmicroscope of the silicon precipitation phenomenon in film forming wafer) figure;
Fig. 2 is the binary phase diagram of Al-Si;
Fig. 3 is the schema of aluminium copper silicon film-forming process of the present invention;
Fig. 4 is the block diagram of aluminium copper silicon film-forming process of the present invention;
Fig. 5 is the TEM(transmission electron microscope of the film forming wafer adopting method of the present invention and existing aluminium copper silicon film-forming process to be formed) figure, wherein, A is existing aluminium copper silicon film-forming process, and B is method of the present invention.
Embodiment
The method of raising aluminium copper silicon quality of forming film of the present invention, as shown in Figure 3-4, comprises step:
1) film forming wafer is in the high temperature chamber of 350 ~ 450 DEG C, and in the physical sputtering mode of routine, (vacuum is less than 5 × 10
-8torr), through 5 ~ 30 seconds, complete the filling perforation of aluminium copper silicon fast, make on film forming wafer, form aluminium silicon-copper films;
Wherein, the thickness of aluminium silicon-copper films is 0.1 ~ 1 μm, and the silicone content in aluminium silicon-copper films is 0.9 ~ 1.1%, copper content is 0.43 ~ 0.57%.
2) the film forming wafer with aluminium silicon-copper films enters into cooling chamber, by the type of cooling of ventilating or pressurizeing, by 350 ~ 450 DEG C, in 10 ~ 30 seconds, is quickly cooled to less than 200 DEG C.
3) in the low temperature cavity of 150 ~ 250 DEG C, film forming wafer completes the growth of aluminium copper silicon metal wire.Wherein, the thickness of aluminium copper silicon metal wire is 1 ~ 10 μm, and the silicone content in aluminium copper silicon metal wire is 0.9 ~ 1.1%, copper content is 0.43 ~ 0.57%.
For above-mentioned steps, more concrete processing condition are adopted to implement:
Film forming wafer is in the high temperature chamber of 400 DEG C, in the physical sputtering mode of routine, after quick formation aluminium silicon-copper films 0.2 μm, film forming wafer transfer in cooling chamber, through 15 seconds, below fast cooling to 200 DEG C, be transported in the low temperature cavity of 200 DEG C again, carry out aluminium copper silicon metal wire and grow up after 4 μm, technique terminates, the TEM figure of the film forming wafer of gained, as shown in Figure 5.As shown in Figure 5, compared with existing aluminium copper silicon film-forming process (the disposable film forming of high temperature), adopt method of the present invention, silicon separates out phenomenon to be had and obviously alleviates.
After film forming wafer of the present invention forms the filling perforation of aluminium copper silicon fast in high temperature chamber, wafer enters into cooling chamber, fast cooling cools, enter again in low temperature cavity and form aluminium copper silicon metal wire, whole technological process is simple, and the present invention is used for metallic aluminium copper silicon physical sputtering technology, can greatly improve sputtered film quality, and improve yield and the visual appearance of device.
Claims (5)
1. improve a method for aluminium copper silicon quality of forming film, it is characterized in that, comprise step:
1) film forming wafer is in the high temperature chamber of 350 ~ 450 DEG C, in the mode of physical sputtering, completes the filling perforation of aluminium copper silicon, makes on film forming wafer, forms aluminium silicon-copper films;
2) film forming wafer enters into cooling chamber, in 10 ~ 30 seconds, is cooled to less than 200 DEG C;
3) in the low temperature cavity of 150 ~ 250 DEG C, film forming wafer completes the growth of aluminium copper silicon metal wire, and the silicone content in described aluminium copper silicon metal wire is 0.9 ~ 1.1%, copper content is 0.43 ~ 0.57%.
2. the method for claim 1, is characterized in that: described step 1) in, completing the filling perforation of aluminium copper silicon is in high temperature chamber, through 5 ~ 30 seconds, completes the filling perforation of aluminium copper silicon.
3. the method for claim 1, is characterized in that: described step 1) in, the thickness of aluminium silicon-copper films is 0.1 ~ 1 μm;
Silicone content in aluminium silicon-copper films is 0.9 ~ 1.1%, copper content is 0.43 ~ 0.57%.
4. the method for claim 1, is characterized in that: described step 2) in, the mode of cooling comprises: ventilation or pressurization.
5. the method for claim 1, is characterized in that: described step 3) in, the thickness of aluminium copper silicon metal wire is 1 ~ 10 μm;
Silicone content in aluminium copper silicon metal wire is 0.9 ~ 1.1%, copper content is 0.43 ~ 0.57%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210342576.7A CN103668088B (en) | 2012-09-14 | 2012-09-14 | Improve the method for aluminium copper silicon quality of forming film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210342576.7A CN103668088B (en) | 2012-09-14 | 2012-09-14 | Improve the method for aluminium copper silicon quality of forming film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103668088A CN103668088A (en) | 2014-03-26 |
| CN103668088B true CN103668088B (en) | 2016-02-10 |
Family
ID=50306847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210342576.7A Active CN103668088B (en) | 2012-09-14 | 2012-09-14 | Improve the method for aluminium copper silicon quality of forming film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103668088B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113308676B (en) * | 2021-05-25 | 2023-02-24 | 西安微电子技术研究所 | Cavity treatment method for aluminum-silicon-copper thick metal film physical vapor deposition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976971A (en) * | 1995-07-19 | 1999-11-02 | Ricoh Company, Ltd. | Fabrication process of a semiconductor device having an interconnection structure |
| US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
| US6372645B1 (en) * | 1999-11-15 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company | Methods to reduce metal bridges and line shorts in integrated circuits |
| CN102383097A (en) * | 2010-09-01 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for preparing aluminum-silicon-copper films |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06275555A (en) * | 1993-03-23 | 1994-09-30 | Kawasaki Steel Corp | Manufacture of semiconductor device |
-
2012
- 2012-09-14 CN CN201210342576.7A patent/CN103668088B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976971A (en) * | 1995-07-19 | 1999-11-02 | Ricoh Company, Ltd. | Fabrication process of a semiconductor device having an interconnection structure |
| US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
| US6372645B1 (en) * | 1999-11-15 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company | Methods to reduce metal bridges and line shorts in integrated circuits |
| CN102383097A (en) * | 2010-09-01 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for preparing aluminum-silicon-copper films |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103668088A (en) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107354506B (en) | A method of preparing super smooth copper single crystal film | |
| CN103173732A (en) | Preparation method of (doped amorphous) p-type transparent conductive oxide films | |
| KR20170037647A (en) | Thin film transistor | |
| CN104037075B (en) | The carborundum back metal thickening method of high temperature resistant process | |
| CN103668088B (en) | Improve the method for aluminium copper silicon quality of forming film | |
| CN104218074A (en) | Amorphous semiconductor film and preparation method and application thereof | |
| CN103996717B (en) | Thin-film transistor and preparation method thereof, display base plate and display unit | |
| JP6160501B2 (en) | Manufacturing method of semiconductor device | |
| CN104253087A (en) | Filling method of aluminum metal process contact hole | |
| CN103151302A (en) | Method for preparing low-resistance tantalum and tantalum nitride double-layer barrier layer by utilizing nitrogen-containing plasma | |
| CN102312211A (en) | Method for forming amorphous transparent oxide film at low temperature | |
| CN108010960A (en) | A kind of oxide thin film transistor gate electrode and preparation method thereof | |
| CN102723268A (en) | Method for preparing self-aligned nickel-silicide | |
| US20210123158A1 (en) | Rhombohedron Epitaxial Growth with Molten Target Sputtering | |
| CN102376756B (en) | Polysilicon gate structure | |
| CN104651796A (en) | Resistance adjustment method of ITO thin film | |
| CN103632931A (en) | Metal aluminum silicon copper sputtering technological method | |
| CN109346405B (en) | Preparation method of GaN-based SBD flip chip | |
| CN105483617A (en) | Method for preparing Mg2Si film on non-silicon substrate | |
| CN110804727A (en) | Strain thin film heterojunction, preparation method and application | |
| Cheng et al. | The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation | |
| WO2016074427A1 (en) | Polycrystalline oxide thin-film transistor array substrate and preparation method therefor | |
| CN102994953B (en) | Method for generating dendritic crystal pattern on surface of Cu/Ti film | |
| JP2008057031A (en) | Wiring and electrode electrode for liquid crystal display free from generation of heat defect and sputtering target for forming them | |
| CN105047696A (en) | P type conductive film Nb<x>W<1-x>S<2> and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |