CN103632931A - Metal aluminum silicon copper sputtering technological method - Google Patents
Metal aluminum silicon copper sputtering technological method Download PDFInfo
- Publication number
- CN103632931A CN103632931A CN201210287156.3A CN201210287156A CN103632931A CN 103632931 A CN103632931 A CN 103632931A CN 201210287156 A CN201210287156 A CN 201210287156A CN 103632931 A CN103632931 A CN 103632931A
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- film forming
- film
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- temperature
- silicon
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- -1 aluminum silicon copper Chemical compound 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 title abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 25
- 238000005516 engineering process Methods 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000009423 ventilation Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 20
- 239000010703 silicon Substances 0.000 abstract description 20
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052755 nonmetal Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a metal aluminum silicon copper sputtering technological method which is characterized by comprising the following steps: step one: a film is formed in a film forming cavity, wherein temperature of the film forming cavity is 400+/-100 DEG C; step two: the formed film is placed inside a high temperature cavity under constant temperature for 30-60 seconds, wherein temperature inside a constant temperature cavity is 500+/-50 DEG C; and step three: temperature in a cooling cavity is rapidly reduced to be less than 200 DEG C within 10-30 seconds. With application of the metal aluminum silicon copper sputtering technological method, precipitation of film silicon after sputtering can be obviously reduced so that device failure caused by incomplete subsequent technological operation is avoided, aluminum silicon copper film formation quality is enhanced and yield rate and appearance quality of devices are enhanced.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit method of manufacturing technology, particularly relate to a kind of metallic aluminium copper silicon sputtering technology method.
Background technology
Metal physics spatter film forming process application is very extensive, and especially at semiconductor applications, sputtering technology directly affects resistance and other physical characteristics of semiconductor device.The sputter of aluminium copper silicon high temperature, as metal process for filling hole, because aluminium silicon-copper films contains a small amount of silicon and metallic copper, makes the film after sputter greatly reduce metallic aluminium puncture, so receive much concern.But again because aluminium silicon-copper films contains a small amount of nonmetal silicon, make the film after sputter have a large amount of silicon to separate out simultaneously, cause subsequent technique operation incomplete, cause component failure, and have a strong impact on appearance of device, as shown in Figure 1.
According to the binary phase diagraml analysis of many scholars' research discovery and metallic aluminium and nonmetal silicon, as shown in Figure 2, when nonmetal silicon mixes with metallic aluminium, temperature when more than 350 ℃, is mainly concentrated into metallic aluminium phase, when temperature reduces greatly, nonmetal silicon will manifest mutually, causes that silicon separates out.So prevent that main path that silicon is separated out is exactly to concentrate film forming under high temperature, maintain metallic aluminium phase, after metallic aluminium hardens completely, fast cooling, just can prevent that silicon from separating out.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of metallic aluminium copper silicon sputtering technology method, can not affect under the prerequisite of device property, improves aluminium copper silicon quality.
For solving the problems of the technologies described above, a kind of metallic aluminium copper silicon sputtering technology method provided by the invention, is characterized in that, comprising:
Step 1: film forming in film forming chamber, the temperature of wherein said film forming chamber is 400 ± 100 degrees Celsius.
Step 2: in high temperature chamber, constant temperature is placed 30-60 second, and wherein said constant temperature cavity temperature is 500 ± 50 degrees Celsius.
Step 3: in cooling chamber at 10-30 in the time of second below fast cooling to 200 degree Celsius.
Further, film forming in the film forming chamber described in step 1, it becomes film thickness scope is 1-10 micron.
Further, the film forming aluminium silicon-copper films described in step 1, it becomes silicone content in film is 1 ± 0.1%, copper content is 0.5 ± 0.07%.
Further, the fast cooling described in step 3, its cooling method is ventilation cooling.
Further, the fast cooling described in step 3, its cooling method is pressurization cooling.
Adopt metallic aluminium copper silicon sputtering technology method of the present invention, the thin film silicon that can significantly reduce after sputter is separated out, and avoids subsequent technique operation incomplete, and the component failure causing improves aluminium copper silicon quality of forming film, improves yield and the presentation quality of device.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is that existing process device silicon is separated out light microscope figure;
Fig. 2 is the binary phase diagraml of metallic aluminium and nonmetal silicon;
Fig. 3 is metallic aluminium copper silicon sputtering technology method flow diagram of the present invention;
Fig. 4 is that the present invention and existing process device silicon are separated out light microscope figure contrast.
Embodiment
For your auditor can be had a better understanding and awareness object of the present invention, feature and effect, below coordinate accompanying drawing to describe in detail as after.
As shown in Figure 3, metallic aluminium copper silicon sputtering technology method of the present invention, comprising:
Step 1: film forming 301 in film forming chamber, concrete is film forming wafer film forming aluminium silicon-copper films under film forming chamber temperature 400 ± 100 degrees celsius, its thickness range is 1-10 micron, and in wherein said aluminium silicon-copper films, silicone content is 1 ± 0.1%, and copper content is 0.5 ± 0.07%.
Step 2: in high temperature chamber, constant temperature places 302, concrete is after film forming aluminium silicon-copper films completes, film forming wafer will be placed 30-60 second by constant temperature under the environment of 500 ± 50 degrees Celsius of temperature.
Step 3: in cooling chamber, fast cooling 303, concrete enter cooling chamber for film forming wafer, have 500 ± 50 degrees Celsius of beginnings of temperature, at 10-30, in the time of second below fast cooling to 200 degree Celsius, the mode of its cooling includes but not limited to ventilation cooling or pressurization cooling etc.
As shown in Figure 4, the present invention and existing process device silicon are separated out light microscope figure contrast, A figure is that existing process device silicon is separated out light microscope figure, can find out that the film after sputter has a large amount of silicon to separate out, these silicon are separated out and will be caused subsequent technique operation incomplete, cause component failure, and have a strong impact on appearance of device.B figure is that metallic aluminium copper silicon sputtering technology method device silicon of the present invention is separated out light microscope figure, can find out that the inventive method improves former process, has obviously reduced silicon and has separated out, and has improved yield and the presentation quality of device.
By specific embodiment, the present invention is had been described in detail above, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (5)
1. a metallic aluminium copper silicon sputtering technology method, is characterized in that, comprising:
Step 1: film forming in film forming chamber, the temperature of wherein said film forming chamber is 400 ± 100 degrees Celsius;
Step 2: in high temperature chamber, constant temperature is placed 30-60 second, and wherein said constant temperature cavity temperature is 500 ± 50 degrees Celsius;
Step 3: in cooling chamber at 10-30 in the time of second below fast cooling to 200 degree Celsius.
2. metallic aluminium copper silicon sputtering technology method as claimed in claim 1, is characterized in that: film forming in the film forming chamber described in step 1, it becomes film thickness scope is 1-10 micron.
3. metallic aluminium copper silicon sputtering technology method as claimed in claim 2, is characterized in that: the film forming aluminium silicon-copper films described in step 1, and it becomes silicone content in film is 1 ± 0.1%, copper content is 0.5 ± 0.07%.
4. metallic aluminium copper silicon sputtering technology method as claimed in claim 1, is characterized in that: the fast cooling described in step 3, its cooling method is ventilation cooling.
5. metallic aluminium copper silicon sputtering technology method as claimed in claim 1, is characterized in that: the fast cooling described in step 3, its cooling method is pressurization cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210287156.3A CN103632931B (en) | 2012-08-13 | 2012-08-13 | Metallic aluminium copper silicon sputtering technology method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210287156.3A CN103632931B (en) | 2012-08-13 | 2012-08-13 | Metallic aluminium copper silicon sputtering technology method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103632931A true CN103632931A (en) | 2014-03-12 |
| CN103632931B CN103632931B (en) | 2016-11-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210287156.3A Active CN103632931B (en) | 2012-08-13 | 2012-08-13 | Metallic aluminium copper silicon sputtering technology method |
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| Country | Link |
|---|---|
| CN (1) | CN103632931B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113308676A (en) * | 2021-05-25 | 2021-08-27 | 西安微电子技术研究所 | Cavity processing method for realizing physical vapor deposition of aluminum-silicon-copper thick metal film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
| JP2000340570A (en) * | 1999-03-19 | 2000-12-08 | Toshiba Corp | Manufacture of semiconductor device and semiconductor manufacturing apparatus |
| CN1567547A (en) * | 2003-06-12 | 2005-01-19 | 矽统科技股份有限公司 | Modification method for metallic layer |
-
2012
- 2012-08-13 CN CN201210287156.3A patent/CN103632931B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
| JP2000340570A (en) * | 1999-03-19 | 2000-12-08 | Toshiba Corp | Manufacture of semiconductor device and semiconductor manufacturing apparatus |
| CN1567547A (en) * | 2003-06-12 | 2005-01-19 | 矽统科技股份有限公司 | Modification method for metallic layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113308676A (en) * | 2021-05-25 | 2021-08-27 | 西安微电子技术研究所 | Cavity processing method for realizing physical vapor deposition of aluminum-silicon-copper thick metal film |
| CN113308676B (en) * | 2021-05-25 | 2023-02-24 | 西安微电子技术研究所 | Cavity treatment method for aluminum-silicon-copper thick metal film physical vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103632931B (en) | 2016-11-02 |
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