CN103646974A - High-concentration silicon solar cell and preparation method thereof - Google Patents
High-concentration silicon solar cell and preparation method thereof Download PDFInfo
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- CN103646974A CN103646974A CN201310616201.XA CN201310616201A CN103646974A CN 103646974 A CN103646974 A CN 103646974A CN 201310616201 A CN201310616201 A CN 201310616201A CN 103646974 A CN103646974 A CN 103646974A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 92
- 239000010703 silicon Substances 0.000 title claims abstract description 92
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 239000002086 nanomaterial Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- -1 pottery Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052950 sphalerite Inorganic materials 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a high-concentration silicon solar cell and a preparation method thereof. The high-concentration silicon solar cell comprises the following components of: a passivated antireflection film; a first doped layer which is produced at the middle of the lower surface of the passivated antireflection film; top-layer silicon which is produced on the lower surface of the first doped layer; a second doped layer of which one end portion covers the lower surface of one end of the first doped layer, wherein the second doped layer is produced on one side surface of the top-layer silicon; a third doped layer of which one end portion cover the lower surface of the other end of the first doped layer, wherein the third doped layer is produced on the other side surface of the top-layer silicon; a buried oxide layer of which the length is larger than that of the top-layer silicon, wherein the buried oxide layer is produced on the lower surface of the top-layer silicon and covers the other end of the second doped layer and the other end of the third doped layer; a first electrode which is produced on the surface of the second doped layer; a second electrode which is produced on the surface of the third doped layer; a heat conduction layer 9 which is produced on the lower surface and two end portions of the buried oxide layer and covers end portions of the first electrode and the second electrode.
Description
Technical field
This patent relates to energy technology field, relates in particular to a kind of high power concentrator silicon solar cell and preparation method thereof.
Background technology
The problems such as whole world environmental pollution in recent years, greenhouse effect are on the rise, and traditional energy reserves are fewer and feweri, price is more and more higher, so the mankind are increasing to the demand of clean energy resource, solar energy power generating is more and more subject to people's attention as a kind of clean energy resource.At present, the solar-energy photo-voltaic cell major part of selling on market is monocrystalline silicon and polysilicon solar cell, substantially adopts the parallel pn junction structure of positive back electrode, make monolithic battery output voltage low, output current is large, and series resistance is large, is unfavorable for practical application and generates electricity by way of merging two or more grid systems.The invention provides structure of a kind of high power concentrator silicon solar cell and preparation method thereof.
Summary of the invention
The object of the present invention is to provide a kind of silicon solar cell and manufacture method thereof, have simple in structure, technological process is simplified and advantage with low cost, and energy output HIGH voltage, low current, under higher incident optical power, still can keep higher conversion efficiency, therefore can be for high power concentrator and high power laser delivery of energy.
The invention provides a kind of high power concentrator silicon solar cell, it comprises:
One passivated reflection reducing membrane;
One first doped layer, it is produced on the middle part of passivated reflection reducing membrane lower surface;
One top layer silicon, it is produced on the lower surface of the first doped layer;
One second doped layer, it is produced on a side of top layer silicon, and its end covers the lower surface of first doped layer one end;
One the 3rd doped layer, it is produced on the another side of top layer silicon, and its end covers the lower surface of the other end of the first doped layer;
One oxygen buried layer, it is produced on the lower surface of top layer silicon, and its length is greater than top layer silicon, and covers the other end of the second doped layer and the other end of the 3rd doped layer;
One first electrode, it is produced on the surface of the second doped layer;
One second electrode, it is produced on the surface of the 3rd doped layer;
One heat-conducting layer, it is produced on lower surface and the both ends of oxygen buried layer, and covers the end of the first electrode and the second electrode.
The present invention also provides a kind of preparation method of high power concentrator silicon solar cell, and it comprises:
Step 1: the both sides in the top layer silicon of SOI material etch the groove for the preparation of the second doped layer, the 3rd doped layer, the first electrode and the second electrode;
Step 2: prepare the first doped layer at the upper surface of top layer silicon, the groove that approaches top layer silicon in the both sides of top layer silicon is prepared respectively the second doped layer and the 3rd doped layer;
Step 3: the first electrode and the second electrode are prepared respectively away from the groove of top layer silicon in the both sides in top layer silicon, and the first electrode contacts with the second doped layer, the second electrode contacts with the 3rd doped layer;
Step 4: the upper surface at the first doped layer is prepared passivated reflection reducing membrane;
Step 5: etch away the low layer silicon of SOI material, and the oxygen buried layer two-end part of etching SOI material is in the part of the first electrode and the second electrode bottom;
Step 6: heat-conducting layer is prepared in oxygen buried layer lower surface and two sides.
The present invention also provides a kind of preparation method of high power concentrator silicon solar cell, and it comprises:
Step 1: the top layer silicon lower surface at silicon substrate material is made oxygen buried layer;
Step 2: etch the groove for the preparation of the second doped layer, the 3rd doped layer, the first electrode and the second electrode in the both sides of top layer silicon;
Step 3: prepare the first doped layer at the upper surface of top layer silicon, the groove that approaches top layer silicon in the both sides of top layer silicon is prepared respectively the second doped layer and the 3rd doped layer;
Step 4: the first electrode and the second electrode are prepared respectively away from the groove of top layer silicon in the both sides in top layer silicon, and the first electrode contacts with the second doped layer, the second electrode contacts with the 3rd doped layer;
Step 4: the upper surface at the first doped layer is prepared passivated reflection reducing membrane;
Step 5: etch away the oxygen buried layer two-end part of SOI material in the part of the first electrode and the second electrode bottom;
Step 6: heat-conducting layer is prepared in oxygen buried layer lower surface and two sides.
The invention has the beneficial effects as follows: this battery positive and negative electrode is positioned at each battery unit both sides, its area is very large, so series resistance can be very little, can be for high power concentrator and high power laser delivery of energy, and the width of positive and negative electrode can do very little, so shading is seldom.Because this battery is the equal of the series connection of a plurality of pn knot, so open circuit voltage is high, by reducing the area of battery unit, can reduce short circuit current, so this battery is more suitable for generating electricity by way of merging two or more grid systems than current conventional structure crystal silicon solar energy battery.
Accompanying drawing explanation
The structural representation of a kind of high power concentrator silicon solar cell that Fig. 1 is to provide;
Fig. 2 is two schematic diagrames that battery unit is connected in series by positive and negative electrode of Fig. 1;
Fig. 3 is preparation method's flow chart of a kind of high power concentrator silicon solar cell of providing in first embodiment of the invention;
Fig. 4 is preparation method's flow chart of a kind of high power concentrator silicon solar cell of providing in first embodiment of the invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
The structural representation of a kind of high power concentrator silicon solar cell providing in first embodiment of the invention is provided Fig. 1.As shown in Figure 1, this high power concentrator silicon solar cell comprises:
One passivated reflection reducing membrane 1, the material of this passivated reflection reducing membrane 1 is Al
2o
3, SiO
2, SiN
x, MgF
2or ZnS and combination thereof, its thickness is less than 500 nanometers;
One first doped layer 2, this first doped layer 2 is produced on the middle part of passivated reflection reducing membrane 1 lower surface, and this first doped layer 2 is N-type doping or the doping of P type;
One top layer silicon 3, this top layer silicon 3 is produced on the lower surface of the first doped layer 2;
One second doped layer 4, this second doped layer 4 is produced on a side of silicon substrate 3, and covers the end of a side of the first doped layer 2, and this second doped layer 4 is N-type doping or the doping of P type;
One the 3rd doped layer 5, the 3rd doped layer 5 is produced on the another side of silicon substrate 3, and cover the end of the opposite side of the first doped layer 2, and the 3rd doped layer 5 is N-type doping or the doping of P type, the doping type of the 3rd doped layer 5 is contrary with the doping type of the second doped layer 4.
One oxygen buried layer 6, this oxygen buried layer 6 is produced on the lower surface of silicon substrate 3, and its length is greater than silicon substrate 3 and covers the second doped layer 4 and an end of the 3rd doped layer 5;
One first electrode 7, this first electrode 7 is produced on the surface of the second doped layer 4, and its length is identical with the second doped layer 4;
One second electrode 8, this second electrode 8 is produced on the surface of the 3rd doped layer 5, and its length is identical with the 3rd doped layer 5;
One heat-conducting layer 9, this heat-conducting layer 9 is produced on lower surface and the both ends of oxygen buried layer 6, and covers an end of the first electrode 7 and the second electrode 8, and this heat-conducting layer 9 adopts metal, pottery, organic or nano material.
Fig. 2 shows the structural representation of a plurality of high power concentrator silicon solar cells serial connection formation of the present invention's proposition.As shown in Figure 2, the plurality of battery unit forms by the first electrode 7 and second electrode 8 serial connections of both sides, the second electrode 8 that is lastblock battery is connected in series with the first electrode of next piece battery, Fig. 2 only shows the serial connection mode of two batteries, the serial connection mode that it will be appreciated by those skilled in the art that a plurality of batteries is similar.
The preparation method of a kind of high power concentrator silicon solar cell providing in the embodiment of the present invention is provided Fig. 3, and the method includes the steps of:
Step 1-1: the method with dry method or wet etching in the top layer silicon 3 of SOI material etches the groove for the preparation of the second doped layer 4, the three doped layer 5, the first electrodes 7 and the second electrode 8;
Step 1-2: adopt the method for Implantation, thermal diffusion, spin coating diffusion or laser doping to prepare the first doped layer 2 at the upper surface of top layer silicon 3, prepare respectively the second doped layer 4 and the 3rd doped layer 5 in the both side surface of top layer silicon 3;
Step 1-3: adopt the method for electron beam evaporation, thermal evaporation, magnetron sputtering, plating, chemical plating or silk screen printing at second doped layer 4 surface preparation the first electrodes 7, at the 3rd doped layer 5 surface preparation the second electrodes 8;
Step 1-4: adopt the method for chemical vapour deposition (CVD), ion beam sputtering, spraying or spin coating to prepare passivated reflection reducing membrane 1 at the upper surface of the first doped layer 2;
Step 1-5: etch away the low layer silicon of SOI material, and etch away oxygen buried layer 6 two-end parts in the part of the first electrode 7 and the second electrode 8 bottoms;
Step 1-6: adopt the method for electron beam evaporation, thermal evaporation, magnetron sputtering, plating, chemical plating, silk screen printing, spraying or spin coating to prepare heat-conducting layer 9 at oxygen buried layer 6 lower surfaces.
Fig. 4 shows the preparation method of the high power concentrator silicon solar cell proposing in another embodiment of the present invention, and the method includes the steps of:
Step 2-1: the method that adopts thermal oxidation or deposition silicon substrate material namely the lower surface of top layer silicon 3 make oxygen buried layer 6
Step 2-2: the method with dry method or wet etching in top layer silicon 3 etches the groove for the preparation of the second doped layer 4, the three doped layer 5, the first electrodes 7 and the second electrode 8;
Step 2-3: adopt the method for Implantation, thermal diffusion, spin coating diffusion or laser doping to prepare the first doped layer 2 at the upper surface of top layer silicon 3, prepare respectively the second doped layer 4 and the 3rd doped layer 5 in the both side surface of top layer silicon 3;
Step 2-4: adopt the method for electron beam evaporation, thermal evaporation, magnetron sputtering, plating, chemical plating or silk screen printing at second doped layer 4 surface preparation the first electrodes 7, at the 3rd doped layer 5 surface preparation the second electrodes 8;
Step 2-5: adopt the method for chemical vapour deposition (CVD), ion beam sputtering, spraying or spin coating to prepare passivated reflection reducing membrane 1 at the upper surface of the first doped layer 2;
Step 2-6: etch away oxygen buried layer 6 two-end parts in the part of the first electrode 7 and the second electrode 8 bottoms;
Step 2-7: adopt the method for electron beam evaporation, thermal evaporation, magnetron sputtering, plating, chemical plating, silk screen printing, spraying or spin coating to prepare heat-conducting layer 9 at oxygen buried layer 6 lower surfaces.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (11)
1. a high power concentrator silicon solar cell, it comprises:
One passivated reflection reducing membrane;
One first doped layer, it is produced on the middle part of passivated reflection reducing membrane lower surface;
One top layer silicon, it is produced on the lower surface of the first doped layer;
One second doped layer, it is produced on a side of top layer silicon, and its end covers the lower surface of first doped layer one end;
One the 3rd doped layer, it is produced on the another side of top layer silicon, and its end covers the lower surface of the other end of the first doped layer;
One oxygen buried layer, it is produced on the lower surface of top layer silicon, and its length is greater than top layer silicon, and covers the other end of the second doped layer and the other end of the 3rd doped layer;
One first electrode, it is produced on the surface of the second doped layer;
One second electrode, it is produced on the surface of the 3rd doped layer;
One heat-conducting layer, it is produced on lower surface and the both ends of oxygen buried layer, and covers the end of the first electrode and the second electrode.
2. high power concentrator silicon solar cell according to claim 1, the material of wherein said passivated reflection reducing membrane is one or more the combination in Al2O3, SiO2, SiNx, MgF2 and ZnS, its thickness is less than 500 nanometers.
3. high power concentrator silicon solar cell according to claim 1, wherein said the first doped layer, the second doped layer and the 3rd doped layer are N-type doping or the doping of P type, and the doping type of the second doped layer and the 3rd doped layer is contrary.
4. high power concentrator silicon solar cell according to claim 1, wherein said heat-conducting layer adopts metal, pottery, organic or nano material to make.
5. a cell apparatus that comprises a plurality of high power concentrator silicon solar cells as described in claim 1-4 any one, wherein, described a plurality of high power concentrator silicon solar cells form by the first electrode and the second electrode serial connection.
6. a preparation method for high power concentrator silicon solar cell, it comprises:
Step 1: the both sides in the top layer silicon of SOI material etch the groove for the preparation of the second doped layer, the 3rd doped layer, the first electrode and the second electrode;
Step 2: prepare the first doped layer at the upper surface of top layer silicon, the groove that approaches top layer silicon in the both sides of top layer silicon is prepared respectively the second doped layer and the 3rd doped layer;
Step 3: the first electrode and the second electrode are prepared respectively away from the groove of top layer silicon in the both sides in top layer silicon, and the first electrode contacts with the second doped layer, the second electrode contacts with the 3rd doped layer;
Step 4: the upper surface at the first doped layer is prepared passivated reflection reducing membrane;
Step 5: etch away the low layer silicon of SOI material, and the oxygen buried layer two-end part of etching SOI material is in the part of the first electrode and the second electrode bottom;
Step 6: heat-conducting layer is prepared in oxygen buried layer lower surface and two sides.
7. a preparation method for high power concentrator silicon solar cell, it comprises:
Step 1: the top layer silicon lower surface at silicon substrate material is made oxygen buried layer;
Step 2: etch the groove for the preparation of the second doped layer, the 3rd doped layer, the first electrode and the second electrode in the both sides of top layer silicon;
Step 3: prepare the first doped layer at the upper surface of top layer silicon, the groove that approaches top layer silicon in the both sides of top layer silicon is prepared respectively the second doped layer and the 3rd doped layer;
Step 4: the first electrode and the second electrode are prepared respectively away from the groove of top layer silicon in the both sides in top layer silicon, and the first electrode contacts with the second doped layer, the second electrode contacts with the 3rd doped layer;
Step 4: the upper surface at the first doped layer is prepared passivated reflection reducing membrane;
Step 5: etch away the oxygen buried layer two-end part of SOI material in the part of the first electrode and the second electrode bottom;
Step 6: heat-conducting layer is prepared in oxygen buried layer lower surface and two sides.
8. according to the preparation method of the structure of a kind of high power concentrator silicon solar cell described in claim 6 or 7, wherein, adopt the method for Implantation, thermal diffusion, spin coating diffusion or laser doping at top layer silicon etching groove.
9. according to the preparation method of the structure of a kind of high power concentrator silicon solar cell described in claim 6 or 7, wherein the first electrode and the second electrode adopt the method preparation of electron beam evaporation, thermal evaporation, magnetron sputtering, plating, chemical plating or silk screen printing.
10. according to the preparation method of the structure of a kind of high power concentrator silicon solar cell described in claim 6 or 7, wherein passivated reflection reducing membrane adopts the method preparation of chemical vapour deposition (CVD), ion beam sputtering, spraying or spin coating.
11. according to the preparation method of the structure of a kind of high power concentrator silicon solar cell described in claim 6 or 7, and wherein heat-conducting layer adopts the method preparation of electron beam evaporation, thermal evaporation, magnetron sputtering, plating, chemical plating, silk screen printing, spraying or spin coating.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241431A (en) * | 2014-10-11 | 2014-12-24 | 苏州阿特斯阳光电力科技有限公司 | Tandem solar cell and preparation method thereof |
| CN106298996A (en) * | 2016-11-07 | 2017-01-04 | 天津理工大学 | A kind of vertical stratification silicon solar cell and preparation method thereof |
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| JP2010258167A (en) * | 2009-04-23 | 2010-11-11 | Mitsubishi Electric Corp | Method of manufacturing solar cell |
| CN102214717A (en) * | 2011-01-28 | 2011-10-12 | 徐诵舜 | Solar energy and thermoelectricity integrated silicon battery compound board and compounding process thereof |
| CN102903775A (en) * | 2012-10-24 | 2013-01-30 | 中国科学院半导体研究所 | crystalline silicon solar cell structure used for light condensation and laser energy transmission and manufacture method of crystalline silicon solar cell structure |
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Patent Citations (4)
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|---|---|---|---|---|
| US20090293948A1 (en) * | 2008-05-28 | 2009-12-03 | Stichting Energieonderzoek Centrum Nederland | Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell |
| JP2010258167A (en) * | 2009-04-23 | 2010-11-11 | Mitsubishi Electric Corp | Method of manufacturing solar cell |
| CN102214717A (en) * | 2011-01-28 | 2011-10-12 | 徐诵舜 | Solar energy and thermoelectricity integrated silicon battery compound board and compounding process thereof |
| CN102903775A (en) * | 2012-10-24 | 2013-01-30 | 中国科学院半导体研究所 | crystalline silicon solar cell structure used for light condensation and laser energy transmission and manufacture method of crystalline silicon solar cell structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241431A (en) * | 2014-10-11 | 2014-12-24 | 苏州阿特斯阳光电力科技有限公司 | Tandem solar cell and preparation method thereof |
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| CN103646974B (en) | 2016-05-18 |
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