CN103646878A - 一种利用电场清除薄膜电致发光器件发光层中缺陷的方法 - Google Patents
一种利用电场清除薄膜电致发光器件发光层中缺陷的方法 Download PDFInfo
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Abstract
一种利用电场清除薄膜电致发光器件发光层中缺陷的方法,首先确定用于清除薄膜电致发光器件发光层中缺陷的电场的最小值Vmin和最大值Vmax,然后,采用下面的办法清除缺陷,a)给器件施加电压V=Vmin,并使该施加电压在约0.2秒内自由衰减为施加电压的15%;b)给器件施加电压V的值提高20%,重复上面的a步骤,接着在提高电压20%,重复上面的a步骤,直至电场电压接近Vmax为止。经过该办法处理后,器件稳定性增强,亮度电流曲线变陡。
Description
技术领域
本发明涉及薄膜电致发光器件领域,具体地说,涉及一种清除薄膜电致发光器件发光层中缺陷,改善发光性能的方法。
背景技术
电致发光(Electroluminescence简称EL),是某些物质被施加电压后,将电能转化为光能的物理现象。薄膜电致发光器件可将电能直接转换成光能,可应用于信息显示或照明等方面。
在平板显示家族中,薄膜电致发光显示器件由于它全固化、耐震动、主动发光、高分辨率、宽视角、响应速度快、寿命长、对环境适应性强等优点而在众多平板显示技术中极具竞争力,是平板显示技术最具生命力的一种。
薄膜电致发光按发光材料可分为无机薄膜电致发光(IEL)及有机薄膜电致发光(OEL)。器件结构一般为发光层夹在两个电极(有的还有其它的功能层)之间。各个薄膜层厚度在几十到几百纳米量级。
目前,制备薄膜的方法有很多种,工艺大致有真空蒸发(Vacuum Evaporation)、射频溅射(Sputting)、原子层外延(ALE)、分子束外延(MBE)、化学气相沉积(MOVCD)等几种。其中,真空蒸发和射频溅射法的应用最为广泛。
薄膜电致发光器件的寿命、亮度等特性不仅与材料有关,而且与工艺条件、制备手段密切相关。影响薄膜质量的因素很多,其中最主要的是制膜技术、真空度和衬底温度。此外,蒸发速率、基底结构、被镀材料的粒度及致密程度、退火处理以及环境污染等因素,也都会对器件的性能产生一定的影响。因此,在薄膜制备过程中要做全面考虑,选择最佳的条件和方法。
在器件的制备过程中,薄膜中会形成一定数量的缺陷或薄弱环节。这些缺陷或薄弱环节的存在会影响到发光器件的电学、光学性能和使用寿命等方面。
发明内容
一种利用电场清除薄膜电致发光器件发光层中缺陷的方法,其特征在于:可以采用以下步骤清除薄膜电致发光器件发光层中缺陷,
(1) 确定用于清除薄膜电致发光器件发光层中缺陷的电场电压的最小值Vmin和最大值Vmax,具体为:
取一样品器件,并施加电场,电场从低到高逐渐增高使其发光,确定该类型器件的启亮电压Vb,取Vb的85%作为后续工作的Vmin;然后,继续增高电压,采取破坏性的办法逐步提供电压的方式确定该样品的最高的承受电压Ve,取该电压Ve的85%作为后续工作的Vmax;
(2) 清除薄膜电致发光器件发光层中缺陷的方法的具体步骤具体是:
a)给器件施加电压V=Vmin, 并使该施加电压在约0.2秒内自由衰减为施加电压的15%;
b)将器件施加的电压V的值提高20%,重复上面的a步骤,接着再提高电压20%,重复上面的a步骤,直至电场电压接近Vmax为止。
有益效果
可以有效清除薄膜电致发光器件发光层中缺陷,改善发光性能。
附图说明
图1一种典型的薄膜电致发光显示器件结构示意图。
图2为产生电场电路图。
图3为施加电场电压的示意图。
具体实施方式
图3所示的电路,由输入电极、可调变压器、双掷开关、整流电路、电容器和输出电极组成。通过可调变压器来调整所需输出的电压值,整流电路使电容器单向充电并使其充电后的极性保持不变。充电后使双掷开关断开,则电容器贮存了电荷,两端存在一定的电势差。用输出电极的两端去接触发光器件的两极,则电容器输出的瞬间电流可以烧掉去除薄弱环节和缺陷。每次输出后,都要使输出电极接触进行放电,尤其在高压时,为保证安全这一点是特别必要的。在使用的过程中,逐步升高电压,电压从低到高形成台阶,先清除最薄弱的环节,而后是较薄弱的,直至全部缺陷清除干净。使用时注意器件所能承受的最大电压,防止电压过高使器件受到击穿损坏。经过处理后的器件的稳定性增强,亮度电流曲线变陡,原因是缺陷及薄弱环节的去除,减少了漏电流的影响,使同发光关系密切的传导电流的作用突出出来了。
Claims (1)
1.一种利用电场清除薄膜电致发光器件发光层中缺陷的方法,其特征在于:可以采用以下步骤清除薄膜电致发光器件发光层中缺陷,
(1) 确定用于清除薄膜电致发光器件发光层中缺陷的电场电压的最小值Vmin和最大值Vmax,具体为:
取一样品器件,并施加电场,电场从低到高逐渐增高使其发光,确定该类型器件的启亮电压Vb,取Vb的85%作为后续工作的Vmin;然后,继续增高电压,采取破坏性的办法逐步提供电压的方式确定该样品的最高的承受电压Ve,取该电压Ve的85%作为的后续工作的Vmax;
(2) 清除薄膜电致发光器件发光层中缺陷的方法的具体步骤具体是:
a)给器件施加电压V=Vmin, 并使该施加电压在约0.2秒内自由衰减为施加电压的15%;
b)将器件施加的电压V的值提高20%,重复上面的a步骤,接着再提高电压20%,重复上面的a步骤,直至电场电压接近Vmax为止。
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CN108918926A (zh) * | 2018-09-21 | 2018-11-30 | 鲁东大学 | 一种多通道安全输出阶梯电压仪 |
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US20020181276A1 (en) * | 2001-06-01 | 2002-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of repairing a light-emitting device, and method of manufacturing a light -emitting device |
CN1510969A (zh) * | 2002-12-20 | 2004-07-07 | 株式会社电装 | 有机el元件的制造方法 |
CN1822737A (zh) * | 2006-03-13 | 2006-08-23 | 信利半导体有限公司 | 有机电致发光显示器及其制作方法 |
CN102832155A (zh) * | 2011-06-17 | 2012-12-19 | 夏普株式会社 | 修补装置以及修补方法、器件的制造方法 |
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US20020181276A1 (en) * | 2001-06-01 | 2002-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of repairing a light-emitting device, and method of manufacturing a light -emitting device |
CN1510969A (zh) * | 2002-12-20 | 2004-07-07 | 株式会社电装 | 有机el元件的制造方法 |
CN1822737A (zh) * | 2006-03-13 | 2006-08-23 | 信利半导体有限公司 | 有机电致发光显示器及其制作方法 |
CN102832155A (zh) * | 2011-06-17 | 2012-12-19 | 夏普株式会社 | 修补装置以及修补方法、器件的制造方法 |
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CN108918926A (zh) * | 2018-09-21 | 2018-11-30 | 鲁东大学 | 一种多通道安全输出阶梯电压仪 |
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