CN103646850B - By the method for FIB marking location on AFP sample - Google Patents
By the method for FIB marking location on AFP sample Download PDFInfo
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- CN103646850B CN103646850B CN201310612744.4A CN201310612744A CN103646850B CN 103646850 B CN103646850 B CN 103646850B CN 201310612744 A CN201310612744 A CN 201310612744A CN 103646850 B CN103646850 B CN 103646850B
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- sample
- afp
- fib
- reference point
- marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The present invention provides the method for a kind of FIB marking location on AFP sample, by setting reference point on sample; By sample preparation to metal level, at reference point place by FIB marking; By sample preparation to contact layer, by AFP scanning samples, draw the position that sample marks, and find target unit according to reference point. The technical scheme of the present invention is simply effective, accurate positioning, reduces the preparation difficulty of AFP fixed point test sample, nano-probe and device can not be caused damage, AFP fixed point test sample repeating unit (such as SRAM region) is had extremely important meaning.
Description
Technical field
The present invention relates to a kind of localization method, particularly relate to the method for a kind of FIB marking location on AFP sample.
Background technology
At semicon industry, to the electrical property failure analysis of chip, especially to the chip product of 90nm and following processing procedure, it is necessary to use AFP(AtomicForceProbe, atomic force probe) carry out testing electrical property.
Its principle of work is: first, scan at sample surfaces with nano-probe, according to sample surfaces height morphogenesis topographic map, forms electrical figure according to micro-electric current (picocurrent) size of sample surfaces; Then, find out the target location acupuncture treatment to be tested according to topographic map and electrical figure and carry out testing electrical property. Therefore, if to be fixed a point the target location tested in repeating unit (such as SRAM region), it is necessary to marking near target location (mark) is located, and then finds target location to test by the mark on topographic map and electrical figure.
Prior art is when beating mark, mainly mark is beaten in BL and WL direction along target location simultaneously, owing to BL direction bit and target location bit shares well (well) district, well easily causes target location equipment (device) test result abnormal after being damaged by mark; This method mark damage position is more simultaneously, and AFP nano-probe must sweep to two mark ability accurately location simultaneously, adds preparation difficulty and the positioning difficulty of AFP fixed point test sample, damages also bigger to nano-probe.
Summary of the invention
In view of the above problems, the present invention provides a kind of FIB method of marking location on AFP sample.
The technical scheme that technical solution problem of the present invention adopts is:
A method for FIB marking location on AFP sample, described sample comprises metal level and contact layer, and described sample has target location, and described method comprises the following steps:
Step 1, sets reference point on to the sample, and described reference point is apart from the some displacements in the target location of described sample;
Step 2, by described sample preparation to metal level, at the reference point place of described sample by FIB marking, described mark has specified shape;
Step 3, by described sample preparation to contact layer, by described AFP scanning samples, draws the position that sample marks, and finds described target unit according to described some displacements.
Preferably, in described step 1 reference point on a horizontal apart from 2, described target location bit.
Preferably, it is labeled as described in step 2 through orthogonal two line segments of described reference point.
Preferably, described sample adopts 65/55nm processing procedure.
Preferably, the width of described mark is less than the tip diameter of described AFP.
Preferably, the tip diameter of described AFP is 130nm.
Preferably, described step 2 is labeled as two each length 5 ��m, wide 0 ��m, the line segment of dark 1.2 ��m.
Preferably, described step 3, by described AFP scanning samples, draws topographic map and electrically schemes, find the position that sample marks on figure.
Technique scheme tool has the following advantages or useful effect:
The technical scheme of the present invention is simply effective, accurate positioning, reduces the preparation difficulty of AFP fixed point test sample, nano-probe and device can not be caused damage, AFP fixed point test sample repeating unit (such as SRAM region) is had extremely important meaning.
Accompanying drawing explanation
With reference to appended accompanying drawing, to describe embodiments of the invention more fully. But, appended accompanying drawing only for illustration of and elaboration, do not form limitation of the scope of the invention.
Fig. 1 is the schematic diagram of the reference point in the embodiment of the present invention;
Fig. 2 is the mark schematic diagram of the 150 times of OM images formed in the embodiment of the present invention;
Fig. 3 is AFP landform schematic diagram in the embodiment of the present invention;
Fig. 4 is the electrical schematic diagram of AFP in the embodiment of the present invention.
Embodiment
Below by way of specific embodiment, the method for the present invention is described in detail.
The method of a kind of FIB of embodiment of the present invention marking location on AFP sample, sample comprises metal level and contact layer, and sample has target location, and method comprises the following steps:
Step 1, as shown in fig. 1, sets reference point 2 on sample, and reference point 2 is apart from the some displacements in target location 1 of sample, it is preferable that along 2, interval, WL direction bit;
Step 2, as shown in Figure 2, by sample preparation to metal level, it is preferable that M2 (metaltwo) layer, and at reference point 2 place of sample by FIB marking, mark has specified shape; Preferably by adjustment FIB parameter (for 65/55nm sample, long 5 ��m, wide 0 ��m, dark 1.2 ��m) marking;
Step 3, by sample preparation to contact layer, logical AFP scanning samples draws topographic map as shown in Figure 3 and Figure 4 and electrically schemes, thus draw the position that sample marks, and the position of reference point 2, and find target unit 1 according to some displacements, then pin is moved to target location scan and test.
Compared with prior art, present method adopts in the middle of target location and mark along 2, interval, WL direction bit, so both can not hurt the device of target location, also allow the fixed point test of AFP more simple accurate. The width of Mark is about 56nm, much smaller than nano-probe tip diameter 130nm, so the nano-probe of scanning can not be hurt.
The inventive method is simply effective, accurate positioning, reduces the preparation difficulty of AFP fixed point test sample, nano-probe and device can not be caused damage, AFP fixed point test sample repeating unit (such as SRAM region) is had extremely important meaning.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent. Therefore, appending claims should regard whole change and the correction of the true intention containing the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (6)
1., by a method for FIB marking location on AFP sample, described sample comprises metal level and contact layer, and described sample has target location, it is characterised in that, described method comprises the following steps:
Step 1, sets reference point on to the sample, and described reference point is apart from 2, the target location of described sample storage unit;
Step 2, by described sample preparation to metal level, at the reference point place of described sample by FIB marking, described mark has specified shape;
Step 3, by described sample preparation to contact layer, by described AFP scanning samples, draws the position that sample marks, and finds described target location according to described 2 storage unit.
2. the method for FIB as claimed in claim 1 marking location on AFP sample, it is characterised in that, it is labeled as described in step 2 through orthogonal two line segments of described reference point.
3. the method for FIB as claimed in claim 2 marking location on AFP sample, it is characterised in that, described sample adopts 65/55nm processing procedure.
4. the method for FIB as claimed in claim 1 marking location on AFP sample, it is characterised in that, the width of described mark is less than the tip diameter of described AFP.
5. the method for FIB as claimed in claim 4 marking location on AFP sample, it is characterised in that, the tip diameter of described AFP is 130nm.
6. the method for FIB as claimed in claim 1 marking location on AFP sample, it is characterised in that, described step 3, by described AFP scanning samples, draws topographic map and electrically schemes, find the position that sample marks on figure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310612744.4A CN103646850B (en) | 2013-11-26 | 2013-11-26 | By the method for FIB marking location on AFP sample |
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| CN201310612744.4A CN103646850B (en) | 2013-11-26 | 2013-11-26 | By the method for FIB marking location on AFP sample |
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| CN103646850A CN103646850A (en) | 2014-03-19 |
| CN103646850B true CN103646850B (en) | 2016-06-08 |
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| CN111679100A (en) * | 2020-07-16 | 2020-09-18 | 上海华力微电子有限公司 | Nano probe testing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1621806A (en) * | 2004-12-10 | 2005-06-01 | 中国科学院长春应用化学研究所 | Method for making substrate with positioning function applied in atomic force microscope research |
| CN102680742A (en) * | 2012-05-28 | 2012-09-19 | 上海华力微电子有限公司 | Method for labeling atomic force nano-probe sample and method for manufacturing integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020127865A1 (en) * | 2001-03-08 | 2002-09-12 | Motorola, Inc. | Lithography method for forming semiconductor devices with sub-micron structures on a wafer and apparatus |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1621806A (en) * | 2004-12-10 | 2005-06-01 | 中国科学院长春应用化学研究所 | Method for making substrate with positioning function applied in atomic force microscope research |
| CN102680742A (en) * | 2012-05-28 | 2012-09-19 | 上海华力微电子有限公司 | Method for labeling atomic force nano-probe sample and method for manufacturing integrated circuit |
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| CN103646850A (en) | 2014-03-19 |
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