CN103646629B - The pixel driving device of a kind of active matrix organic light-emitting display - Google Patents
The pixel driving device of a kind of active matrix organic light-emitting display Download PDFInfo
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Abstract
The present invention provides the pixel driving device of a kind of active matrix organic light-emitting display, described AMOLED is made up of multiple light emitting pixel unit in arranged, at least comprise in each light emitting pixel unit: switching transistor, driving transistor, memory capacitance, OLED, power supply, data voltage source and scan voltage source, wherein transistor is driven to be oxide compound TFT, data voltage source is low temperature polycrystalline silicon AMOLED driving chip, and the negative electrode of OLED is practiced midwifery the chip of raw negative voltage. Negative voltage is connect owing to the negative electrode of OLED being changed into by the present invention by ground connection, the voltage difference at driving circuit two ends is made to become big, so that existing low temperature polycrystalline silicon AMOLED driving chip can successfully drive oxide compound TFT, do you and without the need to the AMOLED driving circuit special driving IC comprising oxide compound TFT, and then effectively reduce oxide compound TFT? the cost of manufacture of AMOLED.
Description
Technical field
The present invention relates to technical field of flat panel display, say the pixel driving device relating to a kind of active matrix organic light-emitting display more specifically.
Background technology
OLED(Organic Light Emitting Diode or organic light emitting diode display) active matrix organic light-emitting display (AMOLED) and passive-matrix organic light emitting display (PMOLED) it is divided into according to its type of drive. In flat panel display, AMOLED is frivolous with it, active illuminating, fast response time, wide viewing angle, color are abundant and numerous advantage such as high brightness, low-power consumption, high-low temperature resistant and to be known as by industry be continue LCD(liquid-crystal display) after third generation indicating meter.
At present, the driving transistor of business-like AMOLED adopts LTPSTFT(low-temperature polysilicon film transistor) backboard, when it is applied over the display, homogeneity is poor, also needs expensive laser crystallization equipment, thus cause its application to be restricted in its production process. And oxide compound TFT(thin film transistor) there is good large-area uniformity, laser crystallization equipment is not needed to carry out producing and utilizing the most equipment of the production line of existing a-SiTFT, thus be conducive to reducing investment, this aspect says that oxide compound TFT has the better market competitiveness.
As shown in Figure 1, for each light emitting pixel unit of AMOLED drives transistor to be driving circuit during oxide compound TFT, comprising: switching transistor T01, driving transistor T02, memory capacitance Cs, offer sweep signal VscanScan voltage source, provide data signal VdataData voltage source and provide service voltage VddPower supply. Wherein, the grid of switching transistor T01 is connected with described scan voltage source, and its drain electrode is connected with described data voltage source, and the source electrode of switching transistor T01 is connected with one end of memory capacitance Cs, and is connected with driving the grid of transistor T02; The other end of memory capacitance Cs and drive the source electrode of transistor T02 and the anode of OLED to be connected; Drive the drain electrode of transistor T02 and service voltage V is providedddPower supply be connected; The plus earth of described OLED.
In prior art, in oxide compound TFTAMOLED pixel-driving circuit, described oxide compound TFT must use the driving IC01 for the specific preparation of oxide compound TFT to drive, and cannot directly use existing LTPSAMOLEDsourceIC(low temperature polycrystalline silicon AMOLED to drive integrated chip) drive, therefore, cause the application cost of oxide compound TFT in AMOLED field higher.
Summary of the invention
In view of this, the present invention provides the pixel driving device of a kind of active matrix organic light-emitting display, during to solve AMOLED pixel driving device of the prior art employing oxide compound TFT, existing LTPSAMOLEDsourceIC cannot be used to drive, thus the problem that the application cost of the oxide compound TFT caused in AMOLED field is higher.
For achieving the above object, the present invention provides following technical scheme:
A kind of AMOLED pixel driving device, described AMOLED is made up of multiple light emitting pixel unit in arranged, AMOLED pixel-driving circuit in each light emitting pixel unit at least comprises: switching transistor, driving transistor, memory capacitance, Organic Light Emitting Diode, power supply, data voltage source and scan voltage source, wherein, described driving transistor is oxide thin film transistor, described data voltage source is low temperature polycrystalline silicon AMOLED driving chip, and the negative electrode of described Organic Light Emitting Diode is practiced midwifery the chip of raw negative voltage.
Preferably, the absolute value scope of the negative voltage that the chip of described generation negative voltage produces is be greater than 0V and be less than the cross-pressure of anode to negative electrode of Organic Light Emitting Diode.
Preferably, the active layer material of described oxide thin film transistor is one or more in In-Ga-Zn-O, In-Ga-O, Ga-Zn-O, In-Hf-Zn-O, In-Sn-Zn-O, In-Sn-O, In-Zn-O, Zn-Sn-O or In-Al-Zn-O.
Preferably, the burning chip of described generation negative voltage has the attenuation characteristic information of described Organic Light Emitting Diode material.
Preferably, described oxide thin film transistor structure is one or more in contact at the bottom of contact at the bottom of end grid, end grid top contact, top grid, top grid top contact, many grid-type.
Preferably, described scan voltage source is non-crystalline silicon LCD driving chip or is chip integrated on oxide thin film transistor backboard.
Preferably, described AMOLED pixel driving device is De-Multiplexers circuit.
Preferably, described De-Multiplexers circuit is the one in one-to-two, one point of three, one points of four circuit.
Preferably, described scan voltage source is chip integrated on oxide thin film transistor backboard, and described chip is also integrated with time control structure.
Known via above-mentioned technical scheme, AMOLED pixel driving device provided by the invention, comprise switching transistor, drive transistor, memory capacitance, Organic Light Emitting Diode, power supply, data voltage source and scan voltage source, wherein, described driving transistor is sull field-effect transistor, described data voltage source is that low temperature polycrystalline silicon AMOLED drives integrated chip, and the negative electrode of described Organic Light Emitting Diode is practiced midwifery the integrated chip of raw negative voltage. negative voltage is connect owing to the negative electrode of the OLED in AMOLED pixel driving device being changed into by the present invention by ground connection, the voltage difference at driving circuit two ends is made to become big, namely the absolute value sum (being also IC output voltage-negative voltage) of IC output voltage and negative voltage is turned into from original IC output voltage (i.e. IC output voltage-0V), so that existing LTPSAMOLEDsourceIC can successfully drive the pixel-driving circuit comprising and driving transistor to be oxide compound TFT, make OLED luminous, relative to prior art needs the scheme preparing the driving IC of oxide compound TFT specially, the AMOLED pixel driving device provided in the present invention, can effectively reduce the cost of manufacture of oxide compound TFTAMOLED, thus promote the development of oxide compound TFTAMOLED technology.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, it is briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, it is also possible to obtain other accompanying drawing according to the accompanying drawing provided.
Fig. 1 is oxide compound TFTAMOLED pixel driving device figure in prior art;
A kind of AMOLED pixel driving device figure that Fig. 2 provides for the embodiment of the present invention;
Another kind of AMOLED pixel driving device figure that Fig. 3 provides for the embodiment of the present invention;
Another kind of AMOLED pixel driving device figure that Fig. 4 provides for the embodiment of the present invention;
A kind of OLED that Fig. 5 provides for the embodiment of the present invention with oxide compound TFT backplate in conjunction with sectional view;
The transfer characteristic curve figure of a kind of oxide compound TFT that Fig. 6 provides for the embodiment of the present invention;
The output characteristic curve figure of a kind of oxide compound TFT that Fig. 7 provides for the embodiment of the present invention.
Embodiment
Just as described in the background section, oxide compound TFT of the prior art has the advantage in technology compared to LTPSTFT, but the driving IC self special procured owing to must redesign when it is applied, the application of oxide compound TFT is caused to be hindered, contriver finds, the reason above-mentioned phenomenon occur is, owing to the carrier mobility of oxide compound TFT is lower, its driving voltage is bigger compared to the driving voltage of low temperature polycrystalline silicon TFT of the prior art, and the low temperature polycrystalline silicon TFT that the output voltage of existing LTPSAMOLEDsourceIC only can drive carrier mobility high, and the oxide compound TFT that carrier mobility can not be driven lower, for this reason, when applying oxide compound TFT, need to redesign and make the bigger IC(integrated chip of the special output voltage of oxide compound TFT), but the application cost of oxide compound TFT in AMOLED field can be increased like this, namely the market competitiveness becoming present aspect to again reduce oxide compound TFT.
Based on this, contriver provides a kind of AMOLED pixel driving device through research, described AMOLED is made up of multiple light emitting pixel unit in arranged, AMOLED pixel driving device in each light emitting pixel unit comprises: switching transistor, drive transistor, memory capacitance, Organic Light Emitting Diode, power supply, data voltage source and scan voltage source, described driving transistor is sull field-effect transistor, described data voltage source is that low temperature polycrystalline silicon AMOLED drives integrated chip, and the negative electrode of described Organic Light Emitting Diode practices midwifery the integrated chip of raw negative voltage.
From above-mentioned technical scheme, AMOLED pixel driving device provided by the invention, the negative electrode of OLED is changed into by ground connection and connects negative voltage, it is that to change into cathode voltage be negative voltage to 0V by OLED cathode voltage, so that the voltage difference of the initial end of driving circuit and end increases, and then after making the output voltage of LPTSAMOLEDIC in prior art be applied in the pixel-driving circuit with oxide compound TFT, also can produce to light the electric current of OLED, namely, LPTSAMOLEDIC of the prior art can successfully drive oxide compound TFT, reduce the cost of manufacture of oxide compound TFTAMOLED pixel driving device, make the Application Areas of oxide compound TFT more extensive.
It it is more than the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments. Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understanding the present invention, but the present invention can also adopt other to be different from mode described here to be implemented, those skilled in the art can do similar popularization when not running counter to intension of the present invention, and therefore the present invention is not by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; representing that the sectional view of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this. In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
The AMOLED pixel driving device that LTPSAMOLEDsourceIC of the prior art can be used to drive oxide compound TFTAMOLED provided by the invention is specifically described below by several embodiments.
The disclosed a kind of AMOLED pixel driving device of the embodiment of the present invention, described AMOLED is made up of multiple light emitting pixel unit in arranged, AMOLED pixel driving device in each light emitting pixel unit comprises: switching transistor, drive transistor, memory capacitance, Organic Light Emitting Diode, power supply, data voltage source and scan voltage source, described driving transistor is sull field-effect transistor, described data voltage source is that low temperature polycrystalline silicon AMOLED drives integrated chip, and the negative electrode of described Organic Light Emitting Diode practices midwifery the integrated chip of raw negative voltage.
It should be noted that, in the present embodiment, the circuit connecting relation of each device can as shown in Figure 2, the grid of switching transistor T1 and described offer sweep signal VscanScan voltage source be connected, its drain electrode with described offer data signal VdataData voltage source be connected, the source electrode of switching transistor T1 is connected with one end of memory capacitance Cs, and with driving transistor T2 grid be connected; The other end of memory capacitance Cs is connected with the anode of the source electrode and OLED that drive transistor T2; Drive the drain electrode of transistor T2 and service voltage V is providedddPower supply be connected; The negative electrode of described OLED connects negative voltage.
In the present embodiment, the circuit connecting relation of each device can also connection relation as shown in Figure 3 and Figure 4, it can in addition contain increase other components and parts, as increased compensating circuit to improve the performance of the AMOLED pixel driving device described in the present embodiment, it will be appreciated by those skilled in the art that, the AMOLED pixel driving device provided in the present embodiment is only the most basic several in AMOLED many kinds of pixel driving devices, can also there be other deformation devices on this basis, the present embodiment no longer repeats at this.
It should be noted that, the source of data voltage described in the present embodiment IC1 shown in LTPSAMOLEDsourceIC(and Fig. 2 that to be in prior art commercial), namely when the plus earth of OLED, the IC of oxide compound TFTAMOLED device cannot be driven. The present embodiment is with the difference of the circuit shown in Fig. 1, described driving transistor T2 is oxide compound TFT, and the negative electrode of described OLED connects is no longer 0V voltage, but the integrated chip IC2 of negative voltage can be provided, the output voltage range that what the integrated chip IC2 of described offer negative voltage was conventional such as LM337, LM337 is compares common voltage-dropping type linear voltage regulator is-1.2V to-37V.
It should be noted that, the described oxide compound TFT in the AMOLED pixel driving device provided in the present embodiment refers to the thin film transistor made by active layer of oxide semiconductors such as In-Zn-O, In-Ga-O, Ga-Zn-O, In-Hf-Zn-O, In-Sn-Zn-O, In-Sn-O, In-Ga-Zn-O, Zn-Sn-O, In-Al-Zn-O; And described oxide compound TFT can utilize the most equipment of existing a-SiTFT production line, and the laser crystallization equipment without the need to costliness, have the advantage of low temperature polycrystalline silicon TFT and non-crystalline silicon tft concurrently, overcome the shortcoming of the laser crystallization equipment that low temperature polycrystalline silicon TFT large-area uniformity is poor, needs are expensive, be conducive to reducing investment.
When adopting oxide compound TFT, its grid, the material of source electrode and drain electrode all can be preferably Mo, Al, Cu, Ag, ITO(tin indium oxide), IZO(IndiumZincOxide, indium zinc oxide) etc. at least one, the material of active layer is preferably IGZO(IndiumGalliumZincOxide, indium gallium zinc), IGO(IndiumGalliumOxide, indium gallium), IZO, ZTO(ZincTinOxide, zinc-tin oxide), In-X-O(X is La series rare earth element, Sn, Ge, Cu, Al, at least one in Nd) etc. at least one, the material of gate insulator or etching barrier layer is preferably SiOx(silicon oxide), SiNx(silicon nitride), AlOx(aluminum oxide), AlNx(aluminium nitride), TiOx(titanium oxide), TiNx(titanium nitride), ZrO2(zirconium white), HfO2At least one in (hafnia) etc., the material of passivation layer is preferably SiOx��SiNx��AlOx��AlNx��TiOx��TiNx��ZrO2��HfO2Deng at least one, and it should be noted that, the TFT of oxide compound described in the present embodiment is preferably N-type TFT.
Scan voltage source described in the present embodiment is non-crystalline silicon LCD(liquid-crystal display) driving chip or chip integrated on oxide thin film transistor backboard, this is not construed as limiting by the present embodiment, in the present embodiment preferably, described scan voltage source is chip integrated on oxide compound TFT, it is called scanning integrated chip (GateInPanel is called for short GIP). All right integrated Timecontroller(time control structure on described GIP) or external Timecontroller, it should be noted that, external time control structure adopts FPGA(Field-ProgrammableGateArray, field-programmable gate array) control, and burning is at PCB(PrintedCircuitBoard, printed circuit board) on.
In the present embodiment, AMOLED has multiple pixel cells arranged into an array, each pixel cell is 2T1C structure, namely two TFT and at least one OLED are comprised, OLED structure is as shown in Figure 5, after oxide compound TFT backplate 51 completes, grow the materials such as the anode 521 of OLED, hole injection layer 522, hole transmission layer 523, luminescent layer 524, electron transfer layer 525, electron injecting layer 526, negative electrode 527 thereon successively, finally encapsulate with materials such as bonnet 53 and packaging plastics. This kind of mode and existing LTPSTFT backboard manufacture craft matching height, technical maturity and efficiency height.
Also it should be noted that, the scope of the negative voltage that the integrated chip that the negative electrode of described OLED connects provides to allow the LTPSAMOLEDsourceIC of existing commercialization drive oxide compound TFT, meanwhile, and can't at VddWhen being 0, under the effect of negative voltage so that OLED is directly lighted by negative voltage, therefore described negative voltage has the maximum absolute value value of a negative pressure.
The span of negative voltage described in the embodiment of the present invention is described below in conjunction with a concrete example:
In order to make OLED stabilized illumination, TFT is driven to need to be operated in saturation region. TFT saturation region operation Current calculation formula:
In formula, �� is the carrier mobility driving TFT, and Cox is the gate insulation layer electric capacity of the unit surface driving TFT, and W/L is the breadth-length ratio driving TFT, VthFor driving the threshold voltage of TFT, VgsFor driving the gate source voltage of TFT, VgateFor driving the grid voltage of TFT, VsFor driving the source voltage terminal of TFT, VdataFor data line input voltage, being also the input voltage of LTPSAMOLEDsourceIC in the present embodiment, described driving TFT is the driving transistor T2 in Fig. 2.
Assuming that the resolving power of oxide compound TFTAMOLED is 300ppi, then the size of each sub-pixel be about 28 ��m * 84 ��m, sub-pixel be the red turquoise striated of RGBstrip() arrangement, after paster the brightness of white balance be 200cd/m2, polaroid transmitance be 0.42, red turquoise beam intensity ratio be 3:6:1, luminous efficiency be 30% than the opening rate for 8cd/A:20cd/A:5cd/A, sub-pixel, luminescent properties according to above OLED calculates and can learn, flows through the electric current I of the OLED in AMOLED pixel driving deviceonIt is at least 200cd/m2/0.42*[3/(3+6+1)]*3/(30%)/(8cd/A)*28*84*30%*10-12=0.13 �� A. Assuming that to be obtained the highest use brightness (after paster) is 1000cd/m2Display unit, then the driving electric current I neededon> 0.65 �� A.
Wherein, the electric current flowing through OLED is also the electric current flowing through and driving transistor, by IonIt is brought into above in TFT saturation region operation Current calculation formula, and following content can be derived in conjunction with the output characteristic shown in the transfer characteristic curve as shown in Figure 6 of oxide compound TFT and Fig. 7, wherein, in Fig. 6, ordinate zou represents the source and drain electric current I ds of oxide compound TFT, unit is ampere (A), X-coordinate represents the grid voltage Vg of oxide compound TFT, and unit is volt (V); In Fig. 7, ordinate zou represents the source and drain electric current I ds of oxide compound TFT, and unit is ampere (A), and ordinate zou represents the source and drain voltage of oxide compound TFT, and unit is volt (V).
The I-V transfer characteristic curve of the oxide compound TFT according to Fig. 6, it is seen that if driving the V of transistorthDuring for 0V, drive the gate source voltage V of transistorgsWith voltage of supply VdsDuring for 5V, IonIt is about several microamperes, I will be madeonIt is 0.13 �� A, calculates through a large amount of data and learn, drive the gate source voltage V of transistorgsWith voltage of supply VdsAt least to be reached 4.5V. Consider OLED self cross-pressure (i.e. voltage difference V between OLED anode and its negative electrode againoled> 3V) impact, then Vgate(i.e. Vdata) and VddNeed to reach 8V and could meet service requirements. Due to the output voltage < 5V of the LTPSAMOLEDsourceIC of commercialization, therefore oxide compound TFTAMOLED can not directly use commercial LTPSAMOLEDsourceIC to drive, and then lights OLED so that it is luminescence display image.
Meanwhile, TFTI-V output characteristic curve according to Fig. 7 is it will be seen that work as Vds=5.1V, Vgs< 0.6V, IonIt is about 10-11A, owing to not reaching VgsAnd VdsThe requirement being all greater than 4.5V, therefore this kind of electric current can not light OLED.
In sum, if the driving transistor T2 shown in Fig. 2 is oxide compound TFT, the output voltage of commercial LTPSAMOLEDsourceIC is 5V, and the plus earth of OLED, if the cross-pressure of OLED is 3V, then drives the source voltage V of transistor T2sAlso it is 3V, so drives the gate source voltage V of transistor T2gsOnly 2V, now, flows through the very little (< 10 of electric current driving transistor T2-10A), thus OLED does not reach required brightness, and from people's eye, OLED is not lit. And if the negative electrode of OLED connects be not (0V), but negative voltage-(Voled-Vs), even if then using the LTPSAMOLEDsourceIC of the commercialization that output voltage is 5V as the driving voltage supplier driving AMOLED pixel driving device, owing to the voltage difference between described OLED anode and negative electrode is just self cross-pressure of OLED when driving transistor to open, thus OLED can normal luminous.
In addition, if the absolute value of described negative voltage is too big, namely at voltage of supply VddDuring for 0V, (Vs+ negative voltage) it is equal to or greater than self cross-pressure V of OLEDoledTime, OLED also can be lit, and this kind of state will make OLED display equipment abnormal luminous, and therefore, the absolute value of described negative voltage is less than (Voled-Vs).
More than be only used to help to understand for the principle of work of AMOLED pixel driving device of a simple example the embodiment of the present invention to be described provide. It is in sum, the negative electrode of OLED is connect the negative voltage that has maximum absolute value value, so that the LTPSAMOLEDsourceIC of commercialization can drive oxide compound TFTAMOLED pixel driving device, avoid the carrier mobility oxide compound TFT low compared with LTPSTFT when applying, the driving integrated chip corresponding with it must be redesigned, and then reduce the cost of manufacture of oxide compound TFTAMOLED, effectively improve the market competitiveness of oxide compound TFT.
In addition, it should be noted that, OLED material in use can decay, cause the luminous efficiency of OLED more and more lower, in order to maintain the brightness of OLED constant (brightness of OLED is directly proportional) to by the electric current of self, the electric current of OLED must be increased through, make the cross-pressure (V between OLED anode and negative electrodeoled) raise. Due to the output voltage of LTPSAMOLEDsourceIC and the V of inputddVoltage is constant, namely drives the source voltage of transistor constant, in order to ensure that OLED brightness does not change, it is necessary to negative pressure value is with VoledChange and carry out dynamic conditioning. Therefore, can first measure the cutoff characteristic of OLED material, and this attenuation characteristic is burnt in the integrated chip (also claiming negative pressure controller) that negative voltage is provided, enable negative voltage follow VoledChange and Automatic adjusument, thus ensure the normal use of client.
AMOLED pixel driving device described in the present embodiment, can for adopting the device of De-Multiplexers circuit (multichannel demultiplexing circuit) can also be the device not adopting De-Multiplexers circuit, the present embodiment is preferably the device adopting De-Multiplexers circuit, and described De-Multiplexers circuit can be any one in one-to-two (1:2), one point three (1:3), one point of four (1:4) circuit, this is not construed as limiting by the present embodiment. Wherein, described one-to-two circuit is the signal that the signal of a channel is divided into two channels, and one point of three circuit and one point of four circuit are with reason, in addition, it will be appreciated by those skilled in the art that, described De-Multiplexers circuit is prior art, therefore, in the present embodiment, therefore not to repeat here.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are enable to realize or use the present invention. To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments. Therefore, the present invention can not be limited in these embodiments shown in this article, but be met the widest scope consistent with principle disclosed herein and features of novelty.
Claims (6)
1. an AMOLED pixel driving device, described AMOLED is made up of multiple light emitting pixel unit in arranged, AMOLED pixel-driving circuit in each light emitting pixel unit at least comprises: switching transistor, driving transistor, memory capacitance, Organic Light Emitting Diode, power supply, data voltage source and scan voltage source, it is characterized in that, described driving transistor is oxide thin film transistor, described data voltage source is low temperature polycrystalline silicon AMOLED driving chip, and the negative electrode of described Organic Light Emitting Diode is practiced midwifery the chip of raw negative voltage;
The absolute value scope of the negative voltage that the chip of described generation negative voltage produces is be greater than 0V and be less than the cross-pressure of anode to negative electrode of Organic Light Emitting Diode;
Described scan voltage source is non-crystalline silicon LCD driving chip or is chip integrated on oxide thin film transistor backboard;
Described chip is also integrated with time control structure.
2. AMOLED pixel driving device according to claim 1, it is characterized in that, the active layer material of described oxide thin film transistor is one or more in In-Ga-Zn-O, In-Ga-O, Ga-Zn-O, In-Hf-Zn-O, In-Sn-Zn-O, In-Sn-O, In-Zn-O, Zn-Sn-O or In-Al-Zn-O.
3. AMOLED pixel driving device according to claim 1, it is characterised in that, the burning chip of described generation negative voltage has the attenuation characteristic information of described Organic Light Emitting Diode material.
4. AMOLED pixel driving device according to claim 1, it is characterised in that, described oxide thin film transistor structure is one or more in contact at the bottom of contact at the bottom of end grid, end grid top contact, top grid, top grid top contact, many grid-type.
5. AMOLED pixel driving device according to claim 1, it is characterised in that, described AMOLED pixel driving device is De-Multiplexers circuit.
6. AMOLED pixel driving device according to claim 5, it is characterised in that, described De-Multiplexers circuit is the one in one-to-two, one point of three, one points of four circuit.
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