CN103645078B - A kind of cross section quick Fabrication of single crystal semiconductor substrate and sub-crizzle detection method - Google Patents
A kind of cross section quick Fabrication of single crystal semiconductor substrate and sub-crizzle detection method Download PDFInfo
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Abstract
The present invention is a kind of cross section quick Fabrication of single crystal semiconductor substrate and sub-crizzle detection method, comprises the following steps: single crystal semiconductor substrate cleaned up; Single crystal semiconductor substrate is processed one or more very low power along to be detected same rectilinear direction; Split at the back side of single crystal semiconductor substrate very low power applying pressure, single crystal semiconductor substrate cracked into two along very low power direction under force, completes the sample preparation in single crystal semiconductor substrate cross section; The detection sectional plane level of the single crystal semiconductor substrate of splitting is put and observes under an optical microscope, mobile single crystal semiconductor substrate makes to be detected to appear at viewing area with the boundary line of detection sectional plane, adjustment optical microscope lens ratio, take the optical microphotograph picture in this region, target area on cross section, measure crackle in detection sectional plane to be detected ultimate range with the boundary line of detection sectional plane, complete the crizzle testing of single crystal semiconductor substrate Asia.Detection method is feasible, and testing result is credible.
Description
Technical field
The present invention relates to single crystal semiconductor substrate and process sub-crizzle detection technique field, particularly relate to the cross section preparation of the superhard semiconductor chips such as monocrystalline silicon, monocrystalline sapphire and monocrystal SiC and sub-crizzle detection method.
Background technology
The high speed development of hyundai electronics, photoelectron technology, has driven the development making its related device semiconductor material, as research, the development & application of single-crystal semiconductor material silicon, sapphire and silit etc.Silit (SiC) has the advantages such as broad-band gap, high heat conductance, high breakdown field strength, high saturated electrons drift speed and high bonding energy as third generation semiconductor material with wide forbidden band, the performance of its excellence can meet modern electronic technology to high frequency, high power, high pressure and radiation-resistant new demand, is that high-frequency high-power power electronic devices and the optoelectronic device of substrate is widely used in white-light illuminating, optical storage, screen display, space flight and aviation, hyperthermia radiation environment, petroleum prospecting, radar and communications, automotive circuit diagram etc. with SiC.
As the backing material of electronic component, its application not only requires that wafer has good form accuracy and surface accuracy, also requires that it does not exist sub-surface damage.Sub-surface damage refers to the inherent vice such as the micro-crack that the nearly surf zone of workpiece is produced by mechanical processing process and unrelieved stress.Its existence can cause that the intensity of material declines, variation in refractive etc., directly has influence on the important performance indexes such as the usability of electronic component, long-time stability, threshold for resisting laser damage and life-span.
Sub-surface damage detection technique mainly comprises destructive and non-destructive detection technique two class, wherein destructive detection method mainly contains HF constant chemical etch-rate method, cross section microscopy, angle polishing method and MRF method etc., and non-destructive detection technique mainly contains ultrasonic scanning microscopy, total internal reflection detection technique, X-ray diffraction, micro-laser Raman spectroscopy, quantum dot-labeled method etc.Relative to destructive detection technique, non-destructive detection technique has detection and introduces the advantages such as new damage fast and not, but its measuring accuracy is low, and investigation depth is shallow, and cost of testing system is high, and measurement result is not directly perceived.Although destructive detection technique has destroy detected sample and the low deficiency of detection efficiency, in the research process of wafer process quality control, be still a kind of irreplaceable detection means.
Cross section microscopy is modal sub-surface damage detection method, by observing the cross section of worked crystal, thus obtains shape and the damage layer depth of sub-surface crack.Most of Chinese scholars adopts sand paper grinding, the method for polishing and corrosion makes cross-section sample, as document H.H.K.Xu, S.Jahanmir.Simpletechniqueforobservingsubsurfacedamagein machiningofceramics [J] .JournalofAmericanCeramicSociety, 1994, described in 77 (5): 1388 – 1390, its method for making is complicated and efficiency is lower.
Summary of the invention
For prior art Problems existing, the present invention is directed to the material characteristics of single crystal semiconductor substrate, propose a kind of cross section quick Fabrication of single crystal semiconductor substrate and the method for sub-surface damage detection.
Technical scheme of the present invention is: a kind of cross section quick Fabrication of single crystal semiconductor substrate and sub-crizzle detection method, comprise the steps:
1) single crystal semiconductor substrate is cleaned up;
2) single crystal semiconductor substrate is processed one or more very low power along to be detected same rectilinear direction;
3) apply pressure at the back side of the very low power of single crystal semiconductor substrate, single crystal semiconductor substrate is cracked into two along very low power direction under force, completes the sample preparation of the detection sectional plane of single crystal semiconductor substrate;
4) the detection sectional plane level of the single crystal semiconductor substrate of splitting is put observe under an optical microscope, mobile single crystal semiconductor substrate, to be detected is made to appear at viewing area with the boundary line of detection sectional plane, adjustment optical microscope lens ratio, take the optical microphotograph picture in this region in detection sectional plane, crackle in measurement detection sectional plane, to the ultimate range between to be detected and the boundary line of detection sectional plane, completes the sub-crizzle testing of single crystal semiconductor substrate.
Described single crystal semiconductor substrate (1) is monocrystalline silicon piece, monocrystalline sapphire substrate and the superhard semiconductor chip of carbide silicon chip, and thickness is 0.1 ~ 10mm.
Described step 1) middle monocrystalline semiconductor wafer cleaning step is for carry out ultrasonic cleaning, washed with de-ionized water and oven dry with clean-out system, and clean-out system is acetone, alcohol or electronic cleaning agent DZ-1, DZ-2.
Described step 2) in processing very low power time device therefor be wafer laser cutting machine or wafer engraving machine.
Described step 2) in processing very low power time wafer laser cutting machine power supply actual output current value be 10 ~ 40A, cutting speed is 0.1 ~ 3mm/s.
Described step 2) in the degree of depth of very low power of processing be 1/8 ~ 2/3 of wafer thickness.
Described step 3) in when applying pressure the instrument that uses clamp for sliver, include sliver pincers dual-gripper block jaw, sliver clamps single back-up block jaw and handle, single crystal semiconductor substrate is placed in sliver pincers dual-gripper block jaw and sliver clamps between single back-up block jaw, by the detailed process that single crystal semiconductor substrate is split along the direction of very low power be: top single crystal semiconductor substrate being placed on sliver pincers dual-gripper block jaw, very low power is placed down, sliver clamps single back-up block jaw and aims at very low power from the back side, pull the handle of sliver pincers, single crystal semiconductor substrate is split along very low power.
Adopt magnet when observing the detection sectional plane of single crystal semiconductor substrate in described step 4), the square such as iron block or marble clamps, and makes detection sectional plane be parallel to optical microscope worktable.
The inventive method tool has the following advantages: owing to adopting wafer laser cutting machine or wafer engraving machine to make very low power, can guarantee the positional precision of very low power, make detection sectional plane obtain the smooth cross section of most of area along rectilinear direction.Because single-crystal semiconductor material has ultrahigh hardness, be not easy to produce new crackle in sliver process, and the sub-surface crack seen from cross section is perpendicular to detection sectional plane, in sliver process, is less likely to occur expansion, guarantees the accuracy of detected sub-surface crack.The present invention takes full advantage of the special performance characteristic of single-crystal semiconductor material, and cross-sectional sample makes simple and fast, and sub-surface crack testing visual result, has guiding significance to the processing technology of single-crystal semiconductor material.
Accompanying drawing explanation
Fig. 1 is the cross section quick Fabrication of a kind of single crystal semiconductor substrate of the embodiment of the present invention and sub-crizzle detection method very low power Working position schematic diagram;
Fig. 2 is cross section quick Fabrication and the sub-crizzle detection method sliver pincers sliver schematic diagram of a kind of single crystal semiconductor substrate of the embodiment of the present invention;
Fig. 3 is single crystal semiconductor substrate schematic cross-section after the cross section quick Fabrication of a kind of single crystal semiconductor substrate of the embodiment of the present invention and sub-crizzle detection method sliver.
Fig. 4 is the schematic diagram that the invention process arranges that the single crystal semiconductor substrate of splitting is put viewing area when observing under an optical microscope by a kind of cross section quick Fabrication of single crystal semiconductor substrate and sub-crizzle detection method.
In figure: 1. single crystal semiconductor substrate, 2. to be detected, 3. very low power, 4. sliver pincers dual-gripper block jaw, 5. sliver clamps single back-up block jaw, 6. detection sectional plane, 7. the sub-surface crack of single crystal semiconductor substrate, 8. to be detected with the boundary line of detection sectional plane, the crackle 9. in detection sectional plane to be detected ultimate range with the boundary line of detection sectional plane, 10. optical microscope viewing area.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but illustrated embodiment is not as a limitation of the invention.
Embodiment 1:
The present embodiment, for through 325# skive, is 151rpm at workpiece rotational frequency, and grinding wheel speed is 3000rpm, and emery wheel speed of feed is that the single crystal SiC substrate obtained under the grinding condition of 5 μm/s carries out sub-crizzle detection, and its step comprises:
Step one: the single crystal SiC substrate after grinding is put into acetone ultrasonic cleaning 5 minutes, then puts into deionized water cleaning 2 minutes, finally puts into drying machine drying.
Step 2: as shown in Figure 1, single crystal SiC substrate grinding skin is placed on the worktable center of UVCAS-5W-B Semi-automatic wafer cutting machine upward, three each and every one very low power 3 are processed along the same rectilinear direction in face 2 to be detected, be 40A by the power supply actual output current value of wafer laser cutting machine, cutting speed is 1mm/s, processes very low power 3;
Step 3: as shown in Figure 2, single crystal SiC substrate is placed on the top of sliver pincers dual-gripper block jaw 4, very low power 3 is placed down, and sliver clamps single back-up block jaw 5 and aims at very low power 3 from the back side, pull the handle of sliver pincers, single crystal SiC substrate is split along very low power 3.
Step 4: adopted by the single crystal SiC substrate split magnet clamping to make cross section 6 to be detected upward, level is observed under being placed on laser confocal microscope, mobile single crystal SiC substrate makes face 2 to be detected appear at viewing area 10 with the boundary line 8 of detection sectional plane, as shown in Figure 4, adjustment laser confocal microscope multiplying power is × 2100, take the laser co-focusing displaing micro picture in this region in detection sectional plane 6, measure the ultimate range 9 of crackle 7 to face 2 to be detected with the boundary line 8 of detection sectional plane 6 in detection sectional plane 6, in the present embodiment, the ultimate range of crackle 7 in detection sectional plane 6 to face 2 to be detected with the boundary line 8 of detection sectional plane 6, the Ji Dare surface crack degree of depth is about 22 μm, complete the sub-crizzle testing of single crystal SiC substrate.
Embodiment 2:
The present embodiment, for through 8000# skive, is 151rpm at workpiece rotational frequency, and grinding wheel speed is 3000rpm, and emery wheel speed of feed is that the single crystal SiC substrate obtained under the grinding condition of 0.1 μm/s carries out sub-crizzle detection, and its step comprises:
Step one: the single crystal SiC substrate after grinding is put into alcohol ultrasonic cleaning 5 minutes, then puts into deionized water cleaning 2 minutes, finally puts into drying machine drying.
Step 2: as shown in Figure 1, single crystal SiC substrate grinding skin is placed on the worktable center of UVCAS-5W-B Semi-automatic wafer cutting machine upward, two very low power 3 are processed along the same rectilinear direction in face 2 to be detected, be 35A by the power supply actual output current value of wafer laser cutting machine, cutting speed is 0.5mm/s, processes very low power 3;
Step 3: as shown in Figure 2, single crystal SiC substrate is placed on the top of sliver pincers dual-gripper block jaw 4, very low power 3 is placed down, and sliver clamps single back-up block jaw 5 and aims at very low power 3 from the back side, pull the handle of sliver pincers, single crystal SiC substrate is split along very low power 3.
Step 4: adopted by the single crystal SiC substrate split iron block clamping to make cross section 6 to be detected upward, level is observed under being placed on laser confocal microscope, mobile single crystal SiC substrate makes face 2 to be detected appear at viewing area 10 with the boundary line 8 of detection sectional plane, as shown in Figure 4, adjustment laser confocal microscope multiplying power is × 6400, take the laser co-focusing displaing micro picture in this region in detection sectional plane 6, measure the ultimate range 9 of crackle 7 to face 2 to be detected with the boundary line 8 of detection sectional plane 6 in detection sectional plane 6, in the present embodiment, the ultimate range of crackle 7 in detection sectional plane 6 to face 2 to be detected with the boundary line 8 of detection sectional plane 6, the Ji Dare surface crack degree of depth is almost 0, complete the sub-crizzle testing of single crystal SiC substrate.
Embodiment 3:
The present embodiment for through W14 diamond abrasive, at loaded weight 3080g, lap speed 80rpm, process time 30min process conditions under grind acquisition single crystal SiC substrate carry out sub-crizzle detection, its step comprises:
Step one: the single crystal SiC substrate after attrition process is put into electronic cleaning agent DZ-1 ultrasonic cleaning 5 minutes, then puts into deionized water cleaning 2 minutes, finally puts into drying machine drying.
Step 2: as shown in Figure 1, single crystal SiC substrate lapped face is placed on the worktable center of UVCAS-5W-B Semi-automatic wafer cutting machine upward, two very low power 3 are processed along the same rectilinear direction in face 2 to be detected, be 30A by the power supply actual output current value of wafer laser cutting machine, cutting speed is 0.1mm/s, processes very low power 3;
Step 3: as shown in Figure 2, single crystal SiC substrate is placed on the top of sliver pincers dual-gripper block jaw 4, very low power 3 is placed down, and sliver clamps single back-up block jaw 5 and aims at very low power 3 from the back side, pull the handle of sliver pincers, single crystal SiC substrate is split along very low power 3.
Step 4: adopted by the single crystal SiC substrate split marble clamping to make cross section 6 to be detected upward, level is observed under being placed on super depth-of-field microscope, mobile single crystal SiC substrate makes face 2 to be detected appear at viewing area 10 with the boundary line 8 of detection sectional plane, as shown in Figure 4, adjusting super depth-of-field microscope multiplying power is × 1000, take the super depth of field displaing micro picture in this region in detection sectional plane 6, measure the ultimate range 9 of crackle 7 to face 2 to be detected with the boundary line 8 of detection sectional plane 6 in detection sectional plane 6, in the present embodiment, the ultimate range of crackle 7 in detection sectional plane 6 to face 2 to be detected with the boundary line 8 of detection sectional plane 6, the Ji Dare surface crack degree of depth is about 10 μm, complete the sub-crizzle testing of single crystal SiC substrate.
Embodiment 4:
The present embodiment for through W7 diamond abrasive, at loaded weight 3080g, lap speed 80rpm, process time 30min process conditions under grind acquisition monocrystalline silicon piece carry out sub-crizzle detection, its step comprises:
Step one: the monocrystalline silicon piece after attrition process is put into acetone ultrasonic cleaning 5 minutes, then puts into deionized water cleaning 2 minutes, finally puts into drying machine drying.
Step 2: as shown in Figure 1, monocrystalline silicon piece lapped face is placed on the worktable center of UVCAS-5W-B Semi-automatic wafer cutting machine upward, a very low power 3 is processed along the same rectilinear direction in face 2 to be detected, be 20A by the power supply actual output current value of wafer laser cutting machine, cutting speed is 1mm/s, processes very low power 3;
Step 3: as shown in Figure 2, monocrystalline silicon piece is placed on the top of sliver pincers dual-gripper block jaw 4, very low power 3 is placed down, and sliver clamps single back-up block jaw 5 and aims at very low power 3 from the back side, pulls the handle of sliver pincers, monocrystalline silicon piece is split along very low power 3.
Step 4: adopted by the monocrystalline silicon piece split magnet clamping to make cross section 6 to be detected upward, level is observed under being placed on super depth-of-field microscope, mobile monocrystalline silicon piece makes face 2 to be detected appear at viewing area 10 with the boundary line 8 of detection sectional plane, as shown in Figure 4, adjusting super depth-of-field microscope multiplying power is × 2000, take the super depth of field displaing micro picture in this region in detection sectional plane 6, measure the ultimate range 9 of crackle 7 to face 2 to be detected with the boundary line 8 of detection sectional plane 6 in detection sectional plane 6, complete the sub-crizzle testing of monocrystalline silicon piece.
Embodiment 5:
The present embodiment for through through W1.5 diamond abrasive, at loaded weight 3080g, lap speed 80rpm, process time 30min process conditions under grind acquisition sapphire substrate carry out sub-crizzle detection, its step comprises:
Step one: the sapphire substrate after attrition process is put into electronic cleaning agent DZ-2 ultrasonic cleaning 5 minutes, then puts into deionized water cleaning 2 minutes, finally puts into drying machine drying.
Step 2: as shown in Figure 1, sapphire substrate lapped face is placed on the worktable center of UVCAS-5W-B Semi-automatic wafer cutting machine upward, four very low power 3 are processed along the same rectilinear direction in face 2 to be detected, be 28A by the power supply actual output current value of wafer laser cutting machine, cutting speed is 0.5mm/s, processes very low power 3;
Step 3: as shown in Figure 2, sapphire substrate is placed on the top of sliver pincers dual-gripper block jaw 4, very low power 3 is placed down, and sliver clamps single back-up block jaw 5 and aims at very low power 3 from the back side, pull the handle of sliver pincers, sapphire substrate is split along very low power 3.
Step 4: adopted by the sapphire substrate split iron block clamping to make cross section 6 to be detected upward, level is observed under being placed on laser confocal microscope, mobile sapphire substrate makes face 2 to be detected appear at viewing area 10 with the boundary line 8 of detection sectional plane, as shown in Figure 4, adjustment laser confocal microscope multiplying power is × 6400, take the laser co-focusing displaing micro picture in this region in detection sectional plane 6, measure the ultimate range 9 of crackle 7 to face 2 to be detected with the boundary line 8 of detection sectional plane 6 in detection sectional plane 6, complete the sub-crizzle testing of sapphire substrate.
Claims (8)
1. the cross section quick Fabrication of single crystal semiconductor substrate and a sub-crizzle detection method, is characterized in that comprising the steps:
1) single crystal semiconductor substrate (1) is cleaned up;
2) single crystal semiconductor substrate (1) is processed one or more very low power (3) along to be detected (2) same rectilinear direction;
3) back side of the very low power (3) in single crystal semiconductor substrate (1) applies pressure, single crystal semiconductor substrate (1) is cracked into two along the direction of very low power (3) under force, completes the sample preparation of the detection sectional plane (6) of single crystal semiconductor substrate (1);
4) detection sectional plane (6) level of the single crystal semiconductor substrate of splitting (1) is put observe under an optical microscope, mobile single crystal semiconductor substrate (1), to be detected (2) are made to appear at viewing area (10) with the boundary line (8) of detection sectional plane, adjustment optical microscope lens ratio, take the optical microphotograph picture in detection sectional plane (6) this region upper, crackle (7) in measurement detection sectional plane (6) is to the ultimate range (9) between to be detected (2) and the boundary line (8) of detection sectional plane (6), complete the testing of single crystal semiconductor substrate (1) sub-crizzle.
2. the cross section quick Fabrication of single crystal semiconductor substrate according to claim 1 and sub-crizzle detection method, it is characterized in that: described single crystal semiconductor substrate (1) is monocrystalline silicon, monocrystalline sapphire or the superhard semiconductor chip of monocrystalline silicon carbide, and thickness is 0.1 ~ 10mm.
3. the cross section quick Fabrication of single crystal semiconductor substrate according to claim 1 and sub-crizzle detection method, it is characterized in that: described step 1) middle single crystal semiconductor substrate (1) cleaning step is for carry out ultrasonic cleaning, washed with de-ionized water and oven dry with clean-out system, and clean-out system is acetone, alcohol or electronic cleaning agent DZ-1, electronic cleaning agent DZ-2.
4. the cross section quick Fabrication of single crystal semiconductor substrate according to claim 2 and sub-crizzle detection method, is characterized in that: described step 2) in processing very low power (3) time device therefor be wafer laser cutting machine or wafer engraving machine.
5. the cross section quick Fabrication of single crystal semiconductor substrate according to claim 4 and sub-crizzle detection method, it is characterized in that: described step 2) in processing very low power (3) time wafer laser cutting machine power supply actual output current value be 10 ~ 40A, cutting speed is 0.1 ~ 3mm/s.
6. the cross section quick Fabrication of single crystal semiconductor substrate according to claim 2 and sub-crizzle detection method, is characterized in that: described step 2) in the degree of depth of very low power (3) of processing be 1/8 ~ 2/3 of wafer thickness.
7. the cross section quick Fabrication of single crystal semiconductor substrate according to claim 3 and sub-crizzle detection method, it is characterized in that: described step 3) in when applying pressure the instrument that uses clamp for sliver, include sliver pincers dual-gripper block jaw (4), sliver clamps single back-up block jaw (5) and handle, single crystal semiconductor substrate (1) is placed in sliver pincers dual-gripper block jaw (4) and sliver clamps between single back-up block jaw (5), by the detailed process that single crystal semiconductor substrate (1) is split along the direction of very low power (3) be: top single crystal semiconductor substrate (1) being placed on sliver pincers dual-gripper block jaw (4), very low power (3) is placed down, sliver clamps single back-up block jaw (5) and aims at very low power (3) from the back side, pull the handle of sliver pincers, single crystal semiconductor substrate (1) is split along very low power (3).
8. the cross section quick Fabrication of single crystal semiconductor substrate according to claim 4 and sub-crizzle detection method, it is characterized in that: adopt the clamping of magnet, iron block or marble square when observing detection sectional plane (6) of single crystal semiconductor substrate (1) in described step 4), make detection sectional plane (6) be parallel to optical microscope worktable.
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