CN103633211A - Gallium nitride light-emitting diode structure and preparing method thereof - Google Patents
Gallium nitride light-emitting diode structure and preparing method thereof Download PDFInfo
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- CN103633211A CN103633211A CN201210300722.XA CN201210300722A CN103633211A CN 103633211 A CN103633211 A CN 103633211A CN 201210300722 A CN201210300722 A CN 201210300722A CN 103633211 A CN103633211 A CN 103633211A
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
The invention discloses a gallium nitride light-emitting diode structure and a preparing method thereof, and relates to the technical field of photoelectricity. The structure of the invention comprises a substrate, and a buffer layer, an unintended doped gallium nitride layer, an N-type doped gallium nitride layer, an active light-emitting layer and a P-type doped gallium nitride layer which are arranged on the substrate successively. An N-type electrode is arranged on the upper surface of the N-type doped gallium nitride layer, and a P-type electrode is arranged on the upper surface of the P-type doped gallium nitride layer. The structure is characterized in that a structure layer having a patterning structure is formed on the upper surface of the unintended doped gallium nitride layer. Compared with the prior art, according to the invention, the dislocation density in a nitride epitaxial layer can be effectively reduced, the light-emitting efficiency of a nitride light-emitting diode device can be improved, and advantages of simple method and low cost can be realized.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly gallium nitride light-emitting diode structure and preparation method thereof.
Background technology
In recent years, the III-V hi-nitride semiconductor material that gallium nitride (GaN) material of take is representative, at UV/blue/green light LED, laser, photodetector, and has a wide range of applications in high-temperature high-frequency high-power electronic device field.Mainly on the substrates such as sapphire (Al2O3), silicon (Si), carborundum (SiC), epitaxial growth obtains GaN material at present, but owing to having very large lattice constant mismatch and the difference of thermal coefficient of expansion between GaN material and substrate, in epitaxially grown GaN layer, there is more dislocation and lattice defect, thereby be difficult to obtain high-quality GaN material, the internal quantum efficiency of light-emitting diode is reduced.
In addition, owing to forming, the semi-conducting material of light-emitting diode and the refractive index difference of air are larger, cause that the shooting angle of light is little and boundary reflection rate is high, like this, only some is extracted the light that send active area, and remaining light can be reflected back toward semi-conducting material inside, after multiple reflections, is absorbed, thereby cause the problem that light extraction efficiency is not high, cause the external quantum efficiency of light-emitting diode lower.
In prior art, in order to improve the luminous efficiency of device, people adopt the technology such as graph substrate, compound substrate, low temperature gallium nitride (GaN) or aluminium nitride (AlN) resilient coating to reduce the threading dislocation density in epitaxial loayer conventionally, thereby reduce the defect concentration in nitride epitaxial layer material, improve internal quantum.But there is the problems such as manufacturing cost is high, production efficiency is low in this method.At present, also having another kind of method is to be all-trans the methods such as film to increase the effect of luminous efficiency by LED surface being carried out to alligatoring processing and evaporation.Nitride material has very strong acid and alkali-resistance characteristic, and wet etching method is difficult to process, and dry etching method can overcome implements etched problem, but easily causes the damage of epitaxial loayer, causes the resistance value of semiconductor layer to raise.
Summary of the invention
The problem existing for above-mentioned prior art, the object of this invention is to provide a kind of gallium nitride light-emitting diode structure and preparation method thereof.It can effectively reduce the dislocation density in nitride epitaxial layer, improves the luminous efficiency of iii-nitride light emitting devices device, has method feature simple, with low cost.
In order to reach foregoing invention object, technical scheme of the present invention realizes as follows:
Technical scheme one
A gallium nitride light-emitting diode structure, it comprises substrate and is placed in successively the resilient coating on substrate, involuntary doped gallium nitride layer, N-type doped gallium nitride layer, active illuminating layer and P type doped gallium nitride layer.N-type electrode is placed in N-type doped gallium nitride layer upper surface, and P type electrode is placed in P type doped gallium nitride layer upper surface.Its design feature is that the upper surface of described involuntary doped gallium nitride layer forms the structure sheaf of a patterned structures.
In above-mentioned light emitting diode construction, the material of described resilient coating adopts a kind of in gallium nitride, aluminium nitride, InGaN or aluminum indium nitride gallium, and the thickness of resilient coating is 10-100nm.
In above-mentioned light emitting diode construction, the thickness of described involuntary doped gallium nitride layer is 1-10 micron, and the thickness of N-type doped gallium nitride layer is 1-5 micron, and the thickness of P type doped gallium nitride layer is 0.1-1 micron.
In above-mentioned light emitting diode construction, the figure of structure sheaf can be the arbitrary pattern in strip, rectangle, circle or triangle.
The manufacture method of gallium nitride light-emitting diode structure as above, the steps include:
1) above substrate, form successively resilient coating and involuntary doped gallium nitride layer;
2) upper surface in involuntary doped gallium nitride layer forms patterned structure sheaf;
3) above structure sheaf, form successively N-type doped gallium nitride layer, active illuminating layer and P type doped gallium nitride layer;
4) at P type doped gallium nitride layer upper surface, form P type electrode; Etching P type doped gallium nitride layer and active illuminating layer, form N-type electrode at the N-type doped gallium nitride layer upper surface coming out from top to bottom.
In above-mentioned manufacture method, it is by yellow light lithography collocation dry method or wet etching process, laser cutting technique or nano-imprint process, to form patterned structure sheaf at the upper surface of involuntary doped gallium nitride layer that the described upper surface in involuntary doped gallium nitride layer forms patterned structure sheaf.
Technical scheme two
A gallium nitride light-emitting diode structure, it comprises substrate and is placed in successively resilient coating, the first involuntary doped gallium nitride layer, N-type doped gallium nitride layer, active illuminating layer and the P type doped gallium nitride layer on substrate.N-type electrode is placed in N-type doped gallium nitride layer upper surface, and P type electrode is placed in P type doped gallium nitride layer upper surface.Its design feature is that the top of described the first involuntary doped gallium nitride layer is also equipped with insulating barrier and the second involuntary doped gallium nitride layer of patterned structures successively.
In above-mentioned light emitting diode construction, the material of described resilient coating adopts a kind of in gallium nitride, aluminium nitride, InGaN or aluminum indium nitride gallium, and the thickness of resilient coating is 10-100nm.
In above-mentioned light emitting diode construction, the thickness of described the first involuntary doped gallium nitride layer is 1-5 micron, the thickness of the second involuntary doped gallium nitride layer is 1-5 micron, and the thickness of N-type doped gallium nitride layer is 1-5 micron, and the thickness of P type doped gallium nitride layer is 0.1-1 micron.
In above-mentioned light emitting diode construction, the material of described insulating barrier adopts a kind of in silicon dioxide, silicon nitride or titanium dioxide, the thickness of insulating barrier is 10-1000 nanometer, and the figure of insulating barrier can be the arbitrary pattern in strip, rectangle, circle or triangle.
The manufacture method of gallium nitride light-emitting diode structure as above, the steps include:
1) above substrate, form successively resilient coating and the first involuntary doped gallium nitride layer;
2) at the upper surface of the first involuntary doped gallium nitride layer, form the insulating barrier of patterned structures;
3) above insulating barrier, form successively the second involuntary doped gallium nitride layer, N-type doped gallium nitride layer, active illuminating layer and P type doped gallium nitride layer;
4) at P type doped gallium nitride layer upper surface, form P type electrode; Etching P type doped gallium nitride layer and active illuminating layer, form N-type electrode at the N-type doped gallium nitride layer upper surface coming out from top to bottom.
In above-mentioned manufacture method, the insulating barrier of described formation patterned structures is by yellow light lithography collocation dry method or wet etching process, laser cutting technique or nano-imprint process, to form figure at the upper surface of insulating barrier.
The present invention has been owing to having adopted said structure and preparation method, formed structure sheaf or an insulating barrier with patterned structures in light LED material epitaxial process.This layer of structure can effectively reduce light LED material epitaxial process Dislocations defect concentration, improves epitaxial film materials quality, thereby improves the internal quantum efficiency of light-emitting diode.Simultaneously, this layer of structure can make to reflect to the light of light-emitting diode internal emission, further towards light-emitting diode outside direction, advances, and reduces interface total reflection effect, also reduce the probability that light is absorbed by inner active layer, substrate, improve thus the luminous efficiency of LED device.
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention one;
Fig. 2 is the structural representation of the embodiment of the present invention two.
Embodiment
Embodiment mono-
Referring to Fig. 1, the structure of the present embodiment one comprises substrate 100 and is placed in successively thickness on substrate is that the resilient coating 101 of 10-100 nanometer, the involuntary doped gallium nitride layer 102 that thickness is 1-10 micron, the structure sheaf 103 of patterned structures, N-type doped gallium nitride layer 104, active illuminating layer 105 and the thickness that thickness is 1-5 micron are the P type doped gallium nitride layer 106 of 0.1-1 micron.N-type electrode 107 is placed in N-type doped gallium nitride layer 104 upper surfaces, and P type electrode 108 is placed in P type doped gallium nitride layer 106 upper surfaces.The material of resilient coating 101 adopts a kind of in gallium nitride, aluminium nitride, InGaN or aluminum indium nitride gallium.The figure of structure sheaf 103 can be the arbitrary pattern in strip, rectangle, circle or triangle.
The manufacture method step of above-mentioned gallium nitride light-emitting diode structure is:
1) above substrate 100, form successively resilient coating 101 and involuntary doped gallium nitride layer 102;
2) upper surface in involuntary doped gallium nitride layer 102 forms patterned structure sheaf 103; The method adopting forms patterned structure sheaf 103 by yellow light lithography collocation dry method or wet etching process, laser cutting technique or nano-imprint process for the upper surface in involuntary doped gallium nitride layer 102;
3) above structure sheaf 103, form successively N-type doped gallium nitride layer 104, active illuminating layer 105 and P type doped gallium nitride layer 106;
4) at P type doped gallium nitride layer 106 upper surfaces, form P type electrode 108; Etching P type doped gallium nitride layer 106 and active illuminating layer 105, form N-type electrode 107 at N-type doped gallium nitride layer 104 upper surfaces that come out from top to bottom.
Embodiment bis-
Referring to Fig. 2, the structure of the present embodiment two is compared with embodiment mono-, just by the first involuntary doped gallium nitride layer 109 of stack successively, insulating barrier 110 and the second involuntary doped gallium nitride layer 111 of patterned structures, has substituted involuntary doped gallium nitride layer 102 and the patterned structure sheaf 103 in embodiment mono-.Wherein, the thickness of the first involuntary doped gallium nitride layer 109 is 1-5 micron, and the thickness of the second involuntary doped gallium nitride layer 111 is 1-5 micron.The material of insulating barrier 110 adopts a kind of in silicon dioxide, silicon nitride or titanium dioxide, and the thickness of insulating barrier 110 is 10-1000 nanometer, and the figure of insulating barrier 110 can be the arbitrary pattern in strip, rectangle, circle or triangle.
The preparation method of the present embodiment two compares detection method step with embodiment mono-, forms successively insulating barrier 110 and the second involuntary doped gallium nitride layer 111 of the first involuntary doped gallium nitride layer 109, patterned structures above resilient coating 101.The insulating barrier 110 that forms patterned structures is that upper surface at insulating barrier 110 is by yellow light lithography collocation dry method or wet etching process, laser cutting technique or nano-imprint process formation figure.
The above-described specific embodiment of the invention, is not limited to the present invention, and all genus are within technical thought of the present invention, and any modification, replacement or the improvement made, within all should being included in protection scope of the present invention.
Claims (12)
1. a gallium nitride light-emitting diode structure, it comprises substrate (100) and is placed in successively the resilient coating (101) on substrate, involuntary doped gallium nitride layer (102), N-type doped gallium nitride layer (104), active illuminating layer (105) and P type doped gallium nitride layer (106), N-type electrode (107) is placed in N-type doped gallium nitride layer (104) upper surface, P type electrode (108) is placed in P type doped gallium nitride layer (106) upper surface, it is characterized in that, the upper surface of described involuntary doped gallium nitride layer (102) forms the structure sheaf (103) of a patterned structures.
2. light emitting diode construction according to claim 1, is characterized in that, the material of described resilient coating (101) adopts a kind of in gallium nitride, aluminium nitride, InGaN or aluminum indium nitride gallium, and the thickness of resilient coating (101) is 10-100 nanometer.
3. gallium nitride light-emitting diode structure according to claim 1 and 2, it is characterized in that, the thickness of described involuntary doped gallium nitride layer (102) is 1-10 micron, the thickness of N-type doped gallium nitride layer (104) is 1-5 micron, and the thickness of P type doped gallium nitride layer (106) is 0.1-1 micron.
4. light emitting diode construction according to claim 3, is characterized in that, the figure of structure sheaf (103) can be the arbitrary pattern in strip, rectangle, circle or triangle.
5. the manufacture method of gallium nitride light-emitting diode structure as claimed in claim 1, the steps include:
1) in the top of substrate (100), form successively resilient coating (101) and involuntary doped gallium nitride layer (102);
2) upper surface in involuntary doped gallium nitride layer (102) forms patterned structure sheaf (103);
3) in the top of structure sheaf (103), form successively N-type doped gallium nitride layer (104), active illuminating layer (105) and P type doped gallium nitride layer (106);
4) at P type doped gallium nitride layer (106) upper surface, form P type electrode (108); Etching P type doped gallium nitride layer (106) and active illuminating layer (105), form N-type electrode (107) at N-type doped gallium nitride layer (104) upper surface coming out from top to bottom.
6. manufacture method according to claim 5, it is characterized in that, it is by yellow light lithography collocation dry method or wet etching process, laser cutting technique or nano-imprint process, to form patterned structure sheaf (103) at the upper surface of involuntary doped gallium nitride layer (102) that the described upper surface in involuntary doped gallium nitride layer (102) forms patterned structure sheaf (103).
7. a gallium nitride light-emitting diode structure, it comprises substrate (100) and is placed in successively the resilient coating (101) on substrate, the first involuntary doped gallium nitride layer (109), N-type doped gallium nitride layer (104), active illuminating layer (105) and P type doped gallium nitride layer (106), N-type electrode (107) is placed in N-type doped gallium nitride layer (104) upper surface, P type electrode (108) is placed in P type doped gallium nitride layer (106) upper surface, it is characterized in that, the top of described the first involuntary doped gallium nitride layer (109) is also equipped with insulating barrier (110) and the second involuntary doped gallium nitride layer (111) of patterned structures successively.
8. gallium nitride light-emitting diode structure according to claim 7, it is characterized in that, the material of described resilient coating (101) adopts a kind of in gallium nitride, aluminium nitride, InGaN or aluminum indium nitride gallium, and the thickness of resilient coating (101) is 10-100 nanometer.
9. according to the gallium nitride light-emitting diode structure described in claim 7 or 8, it is characterized in that, the thickness of described the first involuntary doped gallium nitride layer (109) is 1-5 micron, the thickness of the second involuntary doped gallium nitride layer (111) is 1-5 micron, the thickness of N-type doped gallium nitride layer (104) is 1-5 micron, and the thickness of P type doped gallium nitride layer (106) is 0.1-1 micron.
10. gallium nitride light-emitting diode structure according to claim 9, it is characterized in that, the material of described insulating barrier (110) adopts a kind of in silicon dioxide, silicon nitride or titanium dioxide, the thickness of insulating barrier (110) is 10-1000 nanometer, and the figure of insulating barrier (110) can be the arbitrary pattern in strip, rectangle, circle or triangle.
The manufacture method of 11. gallium nitride light-emitting diode structures as claimed in claim 7, the steps include:
1) in the top of substrate (100), form successively resilient coating (101) and the first involuntary doped gallium nitride layer (109);
2) at the upper surface of the first involuntary doped gallium nitride layer (109), form the insulating barrier (110) of patterned structures;
3) in the top of insulating barrier (110), form successively the second involuntary doped gallium nitride layer (111), N-type doped gallium nitride layer (104), active illuminating layer (105) and P type doped gallium nitride layer (106);
4) at P type doped gallium nitride layer (106) upper surface, form P type electrode (108); Etching P type doped gallium nitride layer (106) and active illuminating layer (105), form N-type electrode (107) at N-type doped gallium nitride layer (104) upper surface coming out from top to bottom.
12. manufacture methods according to claim 11, it is characterized in that, the insulating barrier of described formation patterned structures (110) is by yellow light lithography collocation dry method or wet etching process, laser cutting technique or nano-imprint process, to form figure at the upper surface of insulating barrier (110).
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| US20050110031A1 (en) * | 2003-11-25 | 2005-05-26 | Mu-Jen Lai | High light efficiency of GaN-series of light emitting diode and its manufacturing method thereof |
| CN101471403A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for reusing LED waste slice |
| CN101487974A (en) * | 2008-01-17 | 2009-07-22 | 晶元光电股份有限公司 | Nano-scale printing mould structure and its use on luminous element |
| CN102832306A (en) * | 2012-08-29 | 2012-12-19 | 扬州中科半导体照明有限公司 | Epitaxial structure of high-brightness light emitting diode and implementation method thereof |
| CN202797053U (en) * | 2012-08-23 | 2013-03-13 | 南通同方半导体有限公司 | Gallium nitride light emitting diode structure |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050110031A1 (en) * | 2003-11-25 | 2005-05-26 | Mu-Jen Lai | High light efficiency of GaN-series of light emitting diode and its manufacturing method thereof |
| CN101471403A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for reusing LED waste slice |
| CN101487974A (en) * | 2008-01-17 | 2009-07-22 | 晶元光电股份有限公司 | Nano-scale printing mould structure and its use on luminous element |
| CN202797053U (en) * | 2012-08-23 | 2013-03-13 | 南通同方半导体有限公司 | Gallium nitride light emitting diode structure |
| CN102832306A (en) * | 2012-08-29 | 2012-12-19 | 扬州中科半导体照明有限公司 | Epitaxial structure of high-brightness light emitting diode and implementation method thereof |
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