CN103633185A - Preparation method of crystalline silicon solar cell passive film - Google Patents
Preparation method of crystalline silicon solar cell passive film Download PDFInfo
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- CN103633185A CN103633185A CN201210312734.4A CN201210312734A CN103633185A CN 103633185 A CN103633185 A CN 103633185A CN 201210312734 A CN201210312734 A CN 201210312734A CN 103633185 A CN103633185 A CN 103633185A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 151
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 151
- 239000010703 silicon Substances 0.000 claims abstract description 151
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 65
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 55
- 238000005245 sintering Methods 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 230000000415 inactivating effect Effects 0.000 claims description 20
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 12
- 238000001947 vapour-phase growth Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000007781 pre-processing Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 48
- 239000012535 impurity Substances 0.000 abstract description 33
- 238000002161 passivation Methods 0.000 abstract description 29
- 230000000694 effects Effects 0.000 abstract description 27
- 230000007547 defect Effects 0.000 abstract description 25
- 239000010409 thin film Substances 0.000 abstract 5
- 239000010408 film Substances 0.000 abstract 3
- 210000004027 cell Anatomy 0.000 description 31
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 239000006117 anti-reflective coating Substances 0.000 description 14
- 238000002310 reflectometry Methods 0.000 description 13
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 10
- 230000005611 electricity Effects 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of a crystalline silicon solar cell passive film. The preparation method comprises that: a silicon chip is preprocessed, an a-Si:H thin film is formed on the surface of the silicon chip, a SiNx:H thin film is formed on the surface of the a-Si:H thin film, and sintering is performed. That is to say, firstly, a film layer is formed on the surface of the silicon chip with H as the primary part so that certain passivation effect on the surface of the silicon chip is realized, then the SiNx:H thin film is formed. Besides, H in the SiNx:H thin film has an effect of secondary passivation on the surface of the silicon chip so that passivation on the surface of the silicon chip is fully realized, and defects of impurities, dislocation and crystal boundaries on the surface of the silicon chip are reduced as much as possible. Compared with existing antireflection films, the defects of impurities, dislocation and crystal boundaries existing on the surface of the silicon chip can be effectively reduced by the method provided by the application so that output power of crystalline silicon solar cells is enhanced.
Description
Technical field:
The present invention relates to solar cell manufacturing technology field, relate in particular to a kind of preparation method of crystalline silicon solar cell inactivating film.
Background technology:
Crystal silicon solar energy battery can be electric energy by transform light energy, is an emphasis of modern Energy-saving Society development.
In polycrystalline silicon solar cell manufacture process, conventionally will form antireflective coating at silicon chip surface, the material of antireflective coating is generally silicon nitride, the reflection for reducing polycrystalline silicon solar cell surface to light, thus improve its electricity conversion.Conventionally, in prior art, the preparation method of antireflective coating is: by PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition) in the deposition chamber of equipment, pass into ammonia and silane, form one deck silicon nitride film.When forming antireflective coating, also can introduce hydrogen ion, silicon chip surface is played to passivation.
But existing antireflective coating is unsatisfactory to the passivation effect of silicon chip surface, at silicon chip surface, still there is the defects such as more impurity, dislocation and crystal boundary, make polycrystalline silicon solar cell power output lower.
Summary of the invention
For solving the problems of the technologies described above, the object of the present patent application is to provide a kind of preparation method of crystalline silicon solar cell inactivating film, silicon chip surface is played to better passivation effect, reduce the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improve the power output of polycrystalline silicon solar cell.
For achieving the above object, the invention provides following technical scheme:
A preparation method for crystalline silicon solar cell inactivating film, comprising:
Silicon chip is carried out to preliminary treatment;
At described silicon chip surface, form a-Si:H film;
At described a-Si:H film surface, form SiNx:H film;
Sintering.
Preferably, described preprocessing process, comprising:
Described silicon chip is placed in to the microwave field that frequency is 1.0GHz ~ 1.25GHz, and the duration is 4min ~ 10min.
Preferably, the process of described formation a-Si:H film, comprising:
In reaction chamber, pass into SiH4, flow is 50sccm ~ 90sccm, in the temperature range of 180 ℃ ~ 250 ℃, by plasma chemical vapor phase deposition process, at described silicon chip surface, forms a-Si:H film.
Preferably, the thickness of described a-Si:H film is 8nm ~ 20nm.
Preferably, the process of described formation SiNx:H film, comprising:
In reaction chamber, pass into SiH4 and NH3, the flow of described SiH4 is 200sccm ~ 360sccm, the flow of described NH3 is 640sccm ~ 1150sccm, in the temperature range of 180 ℃ ~ 250 ℃, by plasma chemical vapor phase deposition process, at described a-Si:H film surface, forms SiNx:H film.
Preferably, the thickness of described SiNx:H film is 60nm ~ 80nm.
Preferably, described sintering process, comprising:
Described silicon chip is placed in the temperature range of 300 ℃ ~ 800 ℃, the duration is 2min ~ 6min.
Preferably, described silicon chip is carried out before preliminary treatment comprising:
Described silicon chip is carried out to the process of making herbs into wool, diffusion knot processed, Ke Bian and dephosphorization silex glass.
A crystalline silicon solar cell inactivating film, comprising:
Silicon chip;
A-Si:H film, described a-Si:H film is positioned on described silicon chip surface;
SiNx:H film, described SiNx:H film is positioned on described a-Si:H film surface.
Preferably, the thickness of described a-Si:H film is 8nm ~ 20nm, and the thickness of described SiNx:H film is 60nm ~ 80nm.
In technical scheme provided by the present invention, by forming a-Si:H film at silicon chip surface, then at described a-Si:H film surface, form SiNx:H film.; first the H of take forms a rete as main at silicon chip surface; silicon chip surface is played to certain passivation; then form SiNx:H film; and the H in SiNx:H film can play to silicon chip surface the effect of secondary passivity; make the passivation of silicon chip surface more abundant; reduce as much as possible the defects such as impurity, dislocation and crystal boundary of silicon chip surface; compare with existing antireflective coating; the method that the application provides can effectively reduce the existence of the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improves the power output of polycrystalline silicon solar cell.
In addition, described a-Si:H film and SiNx:H film can play antireflecting effect, improve its electricity conversion.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structural representation of a kind of crystalline silicon solar cell inactivating film that Fig. 1 provides for the embodiment of the present invention.
Embodiment
For making object, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Just as described in the background section, existing antireflective coating is unsatisfactory to the passivation effect of silicon chip surface, still has the defects such as more impurity, dislocation and crystal boundary at silicon chip surface, makes polycrystalline silicon solar cell power output lower.
Inventor studies discovery, because passivating process is that H is combined with silicon chip surface dangling bonds, form very strong Si-H key, to reduce the process in charge carrier complex centre, and traditional H is incorporated into silicon chip surface together with N, inevitably, (for example forming N-H key) can influence each other between H and N, reduce the passivation effect of H, and a passivating process is also not ideal enough for the passivation effect of silicon chip surface.
For this reason, the invention discloses a kind of preparation method of crystalline silicon solar cell inactivating film, comprising: silicon chip is carried out to preliminary treatment, at described silicon chip surface, form a-Si:H film, at described a-Si:H film surface, form SiNx:H film, sintering.
As can be seen from the above scheme, first the application be take H and at silicon chip surface, is formed a rete as main, silicon chip surface is played to certain passivation, then form SiNx:H film, and the H in SiNx:H film can play to silicon chip surface the effect of secondary passivity, make the passivation of silicon chip surface more abundant, reduce as much as possible the impurity of silicon chip surface, the defect such as dislocation and crystal boundary, compare with existing antireflective coating, the method that the application provides can effectively reduce the impurity of silicon chip surface, the existence of the defect such as dislocation and crystal boundary, improve the power output of polycrystalline silicon solar cell.
In addition, described a-Si:H film and SiNx:H film can play antireflecting effect, improve its electricity conversion.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public specific embodiment.
The embodiment of the present application discloses a kind of preparation method of crystalline silicon solar cell inactivating film, comprising:
Silicon chip is carried out to preliminary treatment.
Concrete, described silicon chip is placed in to the microwave field that frequency is 1.0GHz ~ 1.25GHz, the duration is 4min ~ 10min.Under the effect of microwave, can remove pollutant, metal impurities and the top layer mechanical damage on silicon chip top layer, reduce the defects such as impurity, dislocation and crystal boundary of silicon chip surface.
Before silicon chip is carried out to preliminary treatment, also comprise, described silicon chip is carried out to the process of making herbs into wool, diffusion knot processed, Ke Bian and dephosphorization silex glass.
After silicon chip is carried out to preliminary treatment, at described silicon chip surface, form a-Si:H film.
Concrete, the process of described formation a-Si:H film, comprising:
In reaction chamber, pass into SiH4, flow is 50sccm ~ 90sccm, in the temperature range of 180 ℃ ~ 250 ℃, by plasma chemical vapor phase deposition process, at described silicon chip surface, form a-Si:H film, described a-Si:H film is for containing H amorphous si film, and the thickness of described a-Si:H film is 8nm ~ 20nm.
Take H as the main a-Si:H film forming at silicon chip surface, silicon chip surface is played to certain passivation.And except Si, can not introduce other impurity, and Si is as the basic atoms of silicon chip, the extra Si introducing can not impact the passivating process of H, and the H introducing can be fully used.
At described a-Si:H film surface, form SiNx:H film.
Concrete, the process of described formation SiNx:H film, comprising:
In reaction chamber, pass into SiH4 and NH3, the flow of described SiH4 is 200sccm ~ 360sccm, the flow of described NH3 is 640sccm ~ 1150sccm, in the temperature range of 180 ℃ ~ 250 ℃, by plasma chemical vapor phase deposition process, at described a-Si:H film surface, form SiNx:H film, described SiNx:H film is the SiNx film containing H, and the thickness of described SiNx:H film is 60nm ~ 80nm.
H in SiNx:H film can play to silicon chip surface the effect of secondary passivity, make the passivation of silicon chip surface more abundant, reduce as much as possible the defects such as impurity, dislocation and crystal boundary of silicon chip surface, compare with existing antireflective coating, the method that the application provides can effectively reduce the existence of the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improves the power output of polycrystalline silicon solar cell.
In addition, described a-Si:H film and SiNx:H film can play antireflecting effect, improve its electricity conversion.And, the film forming procedure of above-mentioned a-Si:H film and SiNx:H film is under the environment of 180 ℃ ~ 250 ℃, in prior art, silicon nitride film need to be made under the environment of 400 ℃ of left and right, compared to existing technologies, the embodiment of the present application can be lowered into film temperature, is more conducive to implement and reduce energy consumption.
Sintering.
Concrete, described sintering process, comprising:
Described silicon chip is placed in the temperature range of 300 ℃ ~ 800 ℃, the duration is 2min ~ 6min.Described sintering process can make H better be combined with the dangling bonds of silicon chip surface and form Si-H key, improves the passivation effect of H.
Another embodiment of the application discloses the preparation method of another kind of crystalline silicon solar cell inactivating film, comprising:
Silicon chip is carried out to the processing of making herbs into wool, diffusion knot processed, Ke Bian and dephosphorization silex glass.
Described silicon chip is placed in to the microwave field that frequency is 1.25GHz, and the duration is 4min.Under the effect of microwave, can remove pollutant, metal impurities and the top layer mechanical damage on silicon chip top layer, reduce the defects such as impurity, dislocation and crystal boundary of silicon chip surface.
In reaction chamber, pass into SiH4, flow is 50sccm, at the temperature of 250 ℃, by plasma chemical vapor phase deposition process, at described silicon chip surface, forms a-Si:H film, described a-Si:H film is for containing H amorphous si film, and the thickness of described a-Si:H film is 8nm.
Take H as the main a-Si:H film forming at silicon chip surface, silicon chip surface is played to certain passivation.And except Si, can not introduce other impurity, and Si is as the basic atoms of silicon chip, the extra Si introducing can not impact the passivating process of H, and the H introducing can be fully used.
In reaction chamber, pass into SiH4 and NH3, the flow of described SiH4 is 200sccm, the flow of described NH3 is 1150sccm, under the environment of 250 ℃, by plasma chemical vapor phase deposition process, at described a-Si:H film surface, form SiNx:H film, described SiNx:H film is the SiNx film containing H, and the thickness of described SiNx:H film is 78nm.
H in SiNx:H film can play to silicon chip surface the effect of secondary passivity, make the passivation of silicon chip surface more abundant, reduce as much as possible the defects such as impurity, dislocation and crystal boundary of silicon chip surface, compare with existing antireflective coating, the method that the application provides can effectively reduce the existence of the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improves the power output of polycrystalline silicon solar cell.
Utilize the preparation method of the crystalline silicon solar cell inactivating film that the present embodiment provides to produce the crystal silicon solar energy battery obtaining, minority carrier life time is 18.2 μ s, and few sub life-span of existing crystal silicon solar energy battery is only 6.074 μ s.Visible, utilize the preparation method of the crystalline silicon solar cell inactivating film that the present embodiment provides to produce the crystal silicon solar energy battery obtaining, minority carrier life time is greatly improved compared to prior art, and corresponding, the power output of described crystal silicon solar energy battery is also greatly improved.
In addition, in the present embodiment, the crystal silicon solar energy battery surface reflectivity after encapsulation is 25% left and right, and in prior art, the crystal silicon solar energy battery surface reflectivity after encapsulation is 38%.Visible, in the present embodiment, the crystal silicon solar energy battery surface reflectivity after encapsulation has had significant raising compared with prior art, has reduced the reflectivity on crystal silicon solar energy battery surface, has improved the electricity conversion of described crystal silicon solar energy battery.
Described silicon chip is placed in to the lower sintering 2min of 300 ℃.Described sintering process can make H better be combined with the dangling bonds of silicon chip surface and form Si-H key, improves the passivation effect of H.
The another embodiment of the application discloses the preparation method of another crystalline silicon solar cell inactivating film, comprising:
Silicon chip is carried out to the processing of making herbs into wool, diffusion knot processed, Ke Bian and dephosphorization silex glass.
Described silicon chip is placed in to the microwave field that frequency is 1.1GHz, and the duration is 5min.Under the effect of microwave, can remove pollutant, metal impurities and the top layer mechanical damage on silicon chip top layer, reduce the defects such as impurity, dislocation and crystal boundary of silicon chip surface.
In reaction chamber, pass into SiH4, flow is 70sccm, at the temperature of 220 ℃, by plasma chemical vapor phase deposition process, at described silicon chip surface, forms a-Si:H film, described a-Si:H film is for containing H amorphous si film, and the thickness of described a-Si:H film is 12nm.
Take H as the main a-Si:H film forming at silicon chip surface, silicon chip surface is played to certain passivation.And except Si, can not introduce other impurity, and Si is as the basic atoms of silicon chip, the extra Si introducing can not impact the passivating process of H, and the H introducing can be fully used.
In reaction chamber, pass into SiH4 and NH3, the flow of described SiH4 is 280sccm, the flow of described NH3 is 900sccm, under the environment of 220 ℃, by plasma chemical vapor phase deposition process, at described a-Si:H film surface, form SiNx:H film, described SiNx:H film is the SiNx film containing H, and the thickness of described SiNx:H film is 70nm.
H in SiNx:H film can play to silicon chip surface the effect of secondary passivity, make the passivation of silicon chip surface more abundant, reduce as much as possible the defects such as impurity, dislocation and crystal boundary of silicon chip surface, compare with existing antireflective coating, the method that the application provides can effectively reduce the existence of the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improves the power output of polycrystalline silicon solar cell.
Utilize the preparation method of the crystalline silicon solar cell inactivating film that the present embodiment provides to produce the crystal silicon solar energy battery obtaining, minority carrier life time is 17.2 μ s, minority carrier life time compared to prior art 6.074 μ s is greatly improved, accordingly, the power output of described crystal silicon solar energy battery is also greatly improved.
In addition, in the present embodiment, crystal silicon solar energy battery surface reflectivity after encapsulation is 25% left and right, reflectivity compared to prior art 38% has had significant raising, reduce the reflectivity on crystal silicon solar energy battery surface, improved the electricity conversion of described crystal silicon solar energy battery.
Described silicon chip is placed in to the lower sintering 4min of 500 ℃.Described sintering process can make H better be combined with the dangling bonds of silicon chip surface and form Si-H key, improves the passivation effect of H.
The another embodiment of the application discloses the preparation method of another crystalline silicon solar cell inactivating film, comprising:
Silicon chip is carried out to the processing of making herbs into wool, diffusion knot processed, Ke Bian and dephosphorization silex glass.
Described silicon chip is placed in to the microwave field that frequency is 1.0GHz, and the duration is 6min.Under the effect of microwave, can remove pollutant, metal impurities and the top layer mechanical damage on silicon chip top layer, reduce the defects such as impurity, dislocation and crystal boundary of silicon chip surface.
In reaction chamber, pass into SiH4, flow is 90sccm, at the temperature of 250 ℃, by plasma chemical vapor phase deposition process, at described silicon chip surface, forms a-Si:H film, described a-Si:H film is for containing H amorphous si film, and the thickness of described a-Si:H film is 20nm.
Take H as the main a-Si:H film forming at silicon chip surface, silicon chip surface is played to certain passivation.And except Si, can not introduce other impurity, and Si is as the basic atoms of silicon chip, the extra Si introducing can not impact the passivating process of H, and the H introducing can be fully used.
In reaction chamber, pass into SiH4 and NH3, the flow of described SiH4 is 360sccm, the flow of described NH3 is 640sccm, under the environment of 250 ℃, by plasma chemical vapor phase deposition process, at described a-Si:H film surface, form SiNx:H film, described SiNx:H film is the SiNx film containing H, and the thickness of described SiNx:H film is 60nm.
H in SiNx:H film can play to silicon chip surface the effect of secondary passivity, make the passivation of silicon chip surface more abundant, reduce as much as possible the defects such as impurity, dislocation and crystal boundary of silicon chip surface, compare with existing antireflective coating, the method that the application provides can effectively reduce the existence of the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improves the power output of polycrystalline silicon solar cell.
Utilize the preparation method of the crystalline silicon solar cell inactivating film that the present embodiment provides to produce the crystal silicon solar energy battery obtaining, minority carrier life time is 17.8 μ s, minority carrier life time compared to prior art 6.074 μ s is greatly improved, accordingly, the power output of described crystal silicon solar energy battery is also greatly improved.
In addition, in the present embodiment, crystal silicon solar energy battery surface reflectivity after encapsulation is 27% left and right, reflectivity compared to prior art 38% has had significant raising, reduce the reflectivity on crystal silicon solar energy battery surface, improved the electricity conversion of described crystal silicon solar energy battery.
Described silicon chip is placed in to the lower sintering 5min of 500 ℃.Described sintering process can make H better be combined with the dangling bonds of silicon chip surface and form Si-H key, improves the passivation effect of H.
The another embodiment of the application discloses a kind of crystalline silicon solar cell inactivating film, as shown in Figure 1, comprising:
A-Si:H film 2, described a-Si:H film 2, for containing H amorphous si film, is positioned on described silicon chip surface;
SiNx:H film 3, described SiNx:H film 3, for the SiNx film containing H, is positioned on described a-Si:H film 3 surfaces.
H in described a-Si:H film plays passivation one time to silicon chip surface, H in described SiNx:H film can play secondary passivity effect to silicon chip surface, make the passivation of silicon chip surface more abundant, reduce as much as possible the defects such as impurity, dislocation and crystal boundary of silicon chip surface, compare with existing antireflective coating, the method that the application provides can effectively reduce the existence of the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improves the power output of polycrystalline silicon solar cell.
In addition, described a-Si:H film and SiNx:H film can play antireflecting effect, improve its electricity conversion.
The another embodiment of the application discloses a kind of crystalline silicon solar cell inactivating film, comprising:
A-Si:H film, described a-Si:H film, for containing H amorphous si film, is positioned on described silicon chip surface, and the thickness of described a-Si:H film is 8nm ~ 20nm, is preferably 10nm ~ 15nm;
SiNx:H film, described SiNx:H film, for containing the SiNx film of H, is positioned on described a-Si:H film surface, and the thickness of described SiNx:H film is 60nm ~ 80nm, is preferably 65nm ~ 75nm.
H in described a-Si:H film plays passivation one time to silicon chip surface, H in described SiNx:H film can play secondary passivity effect to silicon chip surface, make the passivation of silicon chip surface more abundant, reduce as much as possible the defects such as impurity, dislocation and crystal boundary of silicon chip surface, compare with existing antireflective coating, the method that the application provides can effectively reduce the existence of the defects such as impurity, dislocation and crystal boundary of silicon chip surface, improves the power output of polycrystalline silicon solar cell.
In addition, in the present embodiment, crystal silicon solar energy battery surface reflectivity after encapsulation is 23% ~ 27% left and right, reflectivity compared to prior art 38% has had significant raising, reduce the reflectivity on crystal silicon solar energy battery surface, improved the electricity conversion of described crystal silicon solar energy battery.
In specification of the present invention, each embodiment adopts the mode of going forward one by one to describe, and each embodiment stresses is the difference with other embodiment, between each embodiment identical similar part mutually referring to.Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a preparation method for crystalline silicon solar cell inactivating film, is characterized in that, comprising:
Silicon chip is carried out to preliminary treatment;
At described silicon chip surface, form a-Si:H film;
At described a-Si:H film surface, form SiNx:H film;
Sintering.
2. method according to claim 1, is characterized in that, described preprocessing process, comprising:
Described silicon chip is placed in to the microwave field that frequency is 1.0GHz ~ 1.25GHz, and the duration is 4min～10min.
3. method according to claim 1, is characterized in that, the process of described formation a-Si:H film, comprising:
In reaction chamber, pass into SiH4, flow is 50sccm ~ 90sccm, in the temperature range of 180 ℃ ~ 250 ℃, by plasma chemical vapor phase deposition process, at described silicon chip surface, forms a-Si:H film.
4. method according to claim 3, is characterized in that, the thickness of described a-Si:H film is 8nm ~ 20nm.
5. method according to claim 1, is characterized in that, the process of described formation SiNx:H film, comprising:
In reaction chamber, pass into SiH4 and NH3, the flow of described SiH4 is 200sccm ~ 360sccm, the flow of described NH3 is 640sccm ~ 1150sccm, in the temperature range of 180 ℃ ~ 250 ℃, by plasma chemical vapor phase deposition process, at described a-Si:H film surface, forms SiNx:H film.
6. method according to claim 5, is characterized in that, the thickness of described SiNx:H film is 60nm ~ 80nm.
7. method according to claim 1, is characterized in that, described sintering process, comprising:
Described silicon chip is placed in the temperature range of 300 ℃ ~ 800 ℃, the duration is 2min ~ 6min.
8. method according to claim 1, is characterized in that, described silicon chip is carried out comprising before preliminary treatment:
Described silicon chip is carried out to the process of making herbs into wool, diffusion knot processed, Ke Bian and dephosphorization silex glass.
9. a crystalline silicon solar cell inactivating film, is characterized in that, comprising:
Silicon chip;
A-Si:H film, described a-Si:H film is positioned on described silicon chip surface;
SiNx:H film, described SiNx:H film is positioned on described a-Si:H film surface.
10. crystalline silicon solar cell inactivating film according to claim 9, is characterized in that, the thickness of described a-Si:H film is 8nm ~ 20nm, and the thickness of described SiNx:H film is 60nm ~ 80nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549065A (en) * | 2016-10-24 | 2017-03-29 | 苏州阿特斯阳光电力科技有限公司 | A kind of antiradar reflectivity film layer structure |
| CN109378355A (en) * | 2018-08-24 | 2019-02-22 | 曾杰 | Non-traditional photovoltaic silicon wafer based on microwave treatment is cleaned and dried technique |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090056800A1 (en) * | 2005-04-14 | 2009-03-05 | Renewable Energy Corporation Asa | Surface Passivation of Silicon Based Wafers |
| CN201966216U (en) * | 2011-01-25 | 2011-09-07 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Laminated composite passivation film for front surface of monocrystalline silicon solar cell |
| US20110284068A1 (en) * | 2010-04-23 | 2011-11-24 | Solexel, Inc. | Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells |
-
2012
- 2012-08-29 CN CN201210312734.4A patent/CN103633185A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090056800A1 (en) * | 2005-04-14 | 2009-03-05 | Renewable Energy Corporation Asa | Surface Passivation of Silicon Based Wafers |
| US20110284068A1 (en) * | 2010-04-23 | 2011-11-24 | Solexel, Inc. | Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells |
| CN201966216U (en) * | 2011-01-25 | 2011-09-07 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Laminated composite passivation film for front surface of monocrystalline silicon solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 叶志镇等: "低温气相硅外延前氩微波等离子原位溅射清洗对薄膜界面的损伤", 《真空科学与技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549065A (en) * | 2016-10-24 | 2017-03-29 | 苏州阿特斯阳光电力科技有限公司 | A kind of antiradar reflectivity film layer structure |
| CN109378355A (en) * | 2018-08-24 | 2019-02-22 | 曾杰 | Non-traditional photovoltaic silicon wafer based on microwave treatment is cleaned and dried technique |
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