CN103633037A - Encapsulation structure and manufacturing method thereof - Google Patents
Encapsulation structure and manufacturing method thereof Download PDFInfo
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- CN103633037A CN103633037A CN201210309071.0A CN201210309071A CN103633037A CN 103633037 A CN103633037 A CN 103633037A CN 201210309071 A CN201210309071 A CN 201210309071A CN 103633037 A CN103633037 A CN 103633037A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
An encapsulation structure comprises a substrate, electronic components which are arranged at the top surface of the substrate and are electrically connected with the substrate, and a sealing colloid which is wrapped on the electronic components. The substrate is provided with a plurality of exhaust through holes corresponding to the electronic components; the inner diameters of the exhaust through holes are gradually decreased from the top surface of the substrate to the bottom surface of the substrate; and the exhaust through holes prevent the sealing colloid from flowing out from the bottom surface of the substrate. With the encapsulation structure provided by the invention adopted, the formation of cavities between the electronic components and the substrate can be effectively prevented. The invention also discloses a manufacturing method of the encapsulation structure. The manufacturing method is advantageous in simple manufacturing process and low manufacturing cost.
Description
Technical field
The present invention relates to a kind of encapsulating structure and manufacture method.
Background technology
In prior art, general encapsulating structure normally arranges heat radiation clear opening at the larger ground connection weld pad place of substrate, and described heat radiation clear opening is equipped with packing material.When the larger electronic component of volume, as Flip-Chip Using on substrate time, in sealing process, because heat radiation clear opening is provided with packing material, the gas existing between electronic component and substrate is difficult for discharging by described heat radiation clear opening, thereby make can have cavity between electronic component and substrate, and then affect the performance of described encapsulating structure.
Summary of the invention
In view of this, need provide a kind of encapsulating structure and manufacture method, the gas between electronic component and substrate can be discharged, effectively prevent formation cavity between electronic component and substrate, and processing procedure be simple, can effectively reduce product cost.
The encapsulating structure providing in the embodiment of the invention comprises substrate, is located at the adhesive body of the end face of described substrate and the electronic component being connected with described electrical property of substrate and coated described electronic component.The corresponding described electronic component part of described substrate is provided with a plurality of exhaust holes, and within described exhaust hole, the end face of described substrate progressively dwindles along the bottom surface of described substrate without leave, and described exhaust hole stops that described adhesive body flows out the bottom surface of described substrate.
Preferably, described adhesive body is filled described exhaust hole, and the minimum diameter of described exhaust hole is less than the minimum outer diameter of the filler particles of described adhesive body.
Preferably, described exhaust hole has smooth inwall.
Preferably, described exhaust hole is step-like.
Preferably, described exhaust hole comprises ground floor hole, second layer hole and the 3rd layer of hole, and the bottom surface along described substrate progressively dwindles from the end face of described substrate for described ground floor hole, second layer hole and the 3rd layer of hole.
A kind of encapsulating structure manufacture method providing in the embodiment of the invention comprises: on substrate, make exhaust hole, within described exhaust hole, the end face of described substrate dwindles gradually along bottom surface without leave; Electronic component is placed in to described substrate to be provided with exhaust hole part and to be connected with described electrical property of substrate; By the coated described electronic component of adhesive body, described adhesive body is filled described exhaust hole, and described exhaust hole stops that described adhesive body flows out the bottom surface of described substrate.
Preferably, the hole inwall plated metal that described encapsulating structure manufacture method is also included in described exhaust hole is so that described exhaust hole has smooth inwall.
Preferably, the minimum diameter of described exhaust hole is less than the minimum outer diameter of the filler particles of described adhesive body.
Preferably, described exhaust hole is step-like.
Preferably, described exhaust hole is by being used step-like bit bore to complete.
Preferably, described exhaust hole comprises ground floor hole, second layer hole and the 3rd layer of hole, and the bottom surface along described substrate progressively dwindles from the end face of described substrate for described ground floor hole, second layer hole and the 3rd layer of hole.
The step of preferably, making exhaust hole on substrate comprises the following steps:
On described substrate, make described ground floor hole;
On the basis in described ground floor hole, make described second layer hole; And
On the basis in described second layer hole, make described the 3rd layer of hole.
Preferably, described ground floor hole, second layer hole and the 3rd layer of hole complete by machine drilling or laser drilling or etched mode.
Compared to prior art, encapsulating structure of the present invention, the exhaust hole dwindling gradually by internal diameter is set on substrate, the gas existing between the bottom surface of electronic component and substrate, along with the mould stream of adhesive body flows into described exhaust hole and emits, can effectively prevent from forming between electronic component and substrate empty.Meanwhile, the filler particles of described adhesive body can backstop in the minimum diameter place of described exhaust hole, stop up and seal described exhaust hole, thereby avoid described adhesive body by described exhaust hole, to flow out to the bottom surface of described substrate.Encapsulating structure manufacture method of the present invention, processing procedure is simple, can effectively reduce the cost of product.
Accompanying drawing explanation
Figure 1 shows that the encapsulating structure schematic cross-section of the embodiment of the invention.
Figure 2 shows that the partial enlarged drawing of Fig. 1.
Figure 3 shows that the present invention manufactures the schematic diagram of exhaust hole on substrate.
Figure 4 shows that electronic component is located to the exhaust hole place of substrate the schematic diagram being connected with electrical property of substrate.
Figure 5 shows that the flow chart of an embodiment of the present invention's encapsulating structure manufacture method.
Figure 6 shows that the flow chart of an embodiment of manufacturing exhaust hole on substrate and corresponding schematic diagram.
Main element symbol description
Encapsulating structure 100
Weld pad 13
Exhaust hole 14
The 3rd layer of hole 143
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Please refer to Fig. 1, the present invention's encapsulating structure 100 comprises substrate 10, be located at the end face 11 of substrate 10 and the electronic component 20 being electrically connected with substrate 10 and the adhesive body 30 of coated described electronic component 20.The end face 11 of described substrate 10 and bottom surface 12 are equipped with a plurality of weld pads 13, for realizing the electric connection between electronic component 20 and substrate 10.In present embodiment, electronic component 20 comprises chip 21 and passive device 22, and wherein, chip 21 is realized and fixed and be electrically connected with substrate 10 by copper post 40, and passive device 22 is fixed on substrate 10 by scolding tin 50 and is electrically connected with substrate 10.In other embodiments, electronic component 20 also can be the electronic component that other volume is larger, as filter etc.
Corresponding electronic component 20 parts of substrate 10 are provided with a plurality of exhaust holes 14, within described exhaust hole 14, the end face 11 of described substrate 10 progressively dwindles along the bottom surface 12 of described substrate 10 without leave, and described exhaust hole 14 stops that described adhesive body 30 flows out the bottom surface 12 of described substrate 10.In present embodiment, referring to Fig. 2, described exhaust hole 14 is step-like and comprises ground floor hole 141, second layer hole 142 and the 3rd layer of hole 143.Within ground floor hole 141 within footpath d1, second layer hole 142 within footpath d2, the 3rd layer of hole 143 footpath d3 from the end face 11 of described substrate 10, the bottom surface 12 along described substrate 10 progressively dwindles, i.e. d1>d2>d3.
In present embodiment, exhaust hole 14 is three layers of stepped hole, in other execution mode of the present invention, also can adjust according to the minimum outer diameter size of the filler particles 32 of the thickness of the layout of product, substrate 10 and adhesive body 30 the step number of plies of exhaust hole 14.
Please refer to Fig. 2, adhesive body 30 comprises resin 31 and a plurality of equally distributed erose filler particles 32 that has, in the process of sealing, described adhesive body 30 is filled in described exhaust hole 14, and filler particles 32 backstops of described adhesive body 30 are in the minimum diameter place of described exhaust hole 14, be backstop in 143 places, described the 3rd layer of hole, thereby stop up and seal described exhaust hole 14.In present embodiment, the minimum diameter of described exhaust hole 14 is less than the minimum outer diameter of the filler particles 32 of described adhesive body 30, that is to say, filler particles 32 backstops of described adhesive body 30 are in 143 places, the 3rd layer of hole of exhaust hole 14.
In the process of sealing, adhesive body 30 can be injected in described exhaust hole 14 constantly along bottom surface and the space between substrate 10 of electronic component 20, and the gas existing between the bottom surface of electronic component 20 and substrate 10 can flow into along with the mould stream of adhesive body 30 in described exhaust hole 14 and by described exhaust hole 14 and be expelled to outside described substrate 10.When the filler particles 32 of adhesive body 30 flows into the bottom of described exhaust hole 14, while flowing into the minimum diameter place of described exhaust hole 14, due within described exhaust hole 14 without leave the end face 11 of described substrate 10 along the bottom surface 12 of described substrate 10, progressively dwindle, and the minimum diameter of described exhaust hole 14 is less than the minimum outer diameter of described filler particles 32, now, described filler particles 32 meeting backstops are in the minimum diameter place of described exhaust hole 14, stop up and seal described exhaust hole 14, adhesive body 30 is filled described exhaust hole 14.Meanwhile, part is about to flow out within the resin 31 of the adhesive body 30 of the bottom surface 12 of substrate 10 externally stays in described exhaust hole 14 under the active force of air pressure, thereby prevents that adhesive body 30 from flowing out to the bottom surface 12 of described substrate 10 from exhaust hole 14.
Encapsulating structure 100 of the present invention, by the diminishing exhaust hole 14 of internal diameter is set on substrate 10, in the process of sealing, the bottom surface 12 of electronic component 20 and the gas between substrate 10 are discharged by described exhaust hole 14, thereby avoid producing between described electronic component 20 and substrate 10 empty.Described exhaust hole 14 is stopped up and sealed to filler particles 32 backstops of described adhesive body 30, in the minimum diameter place of described exhaust hole 14,, thereby prevent that described adhesive body 30 from flowing out to the bottom surface 12 of described substrate 10.Meanwhile, the adhesive body 30 being filled in described exhaust hole 14 can strengthen the adhesion between adhesive body 30 and substrate 10, prevent from producing layering between adhesive body 30 and substrate 10, thus the reliability of raising encapsulating structure.
In other execution mode of the present invention, described exhaust hole 14 has smooth inwall and is stopped up by adhesive body 30 to prevent the gas described exhaust hole 14 before being discharged completely between electronic component 20 and substrate 10, thereby guarantees that described gas is discharged outside described substrate 10 completely by described exhaust hole 14.
Figure 5 shows that the flow chart of an embodiment of the present invention's encapsulating structure 100 manufacture methods.The present invention's encapsulating structure 100 manufacture methods, for being embedded in adhesive body 30 in electronic component 20.Described encapsulating structure 100 manufacture methods, comprise the steps.
At step S210, on substrate 10, make exhaust hole 14, as shown in Figure 3.Within described exhaust hole 14, the end face 11 of described substrate 10 12 dwindles gradually along bottom surface without leave.In present embodiment, described exhaust hole 14 comprises ground floor hole 141, second layer hole 142 and the 3rd layer of hole 143, and described ground floor, the second layer and the 3rd layer of hole 141,142,143 are step-like.That is to say, within ground floor hole 141 within footpath d1, second layer hole 142 within footpath d2, the 3rd layer of hole 143 footpath d3 from the end face 11 of described substrate 10, the bottom surface 12 along described substrate 10 progressively dwindles, be d1>d2>d3, as shown in Figure 2.
At step S220, electronic component 20 is placed in to described substrate 10 and is provided with exhaust hole 14 parts and is electrically connected with described substrate 10, please refer to Fig. 4.
At step S230, adopt the coated described electronic component 20 of adhesive body 30, please refer to Fig. 1.In present embodiment, utilize injecting glue forming technique by electronic component 20 fixing and landfill in adhesive body 30.In the process of sealing, the gas existing between the bottom surface 12 of electronic component 20 and substrate 10 can flow into along with the mould stream of adhesive body 30 in described exhaust hole 14 and by described exhaust hole 14 and be expelled to outside described substrate 10.Because the minimum diameter of described exhaust hole 14 is less than the minimum outer diameter of the filler particles 32 of adhesive body 30, filler particles 32 backstops of described adhesive body 30 are in the minimum diameter place of described exhaust hole 14, stop up and seal described exhaust hole 14, thereby prevent that described adhesive body 30 from flowing out to the bottom surface 12 of described substrate 10 by described exhaust hole 14.Final product cuts into product the making that the individuality of single can complete product after the processing procedures such as overbaking, lettering.
Please refer to Fig. 6, be depicted as manufacturing flow chart and the manufacture process schematic diagram of one of exhaust hole 14 embodiment.In present embodiment, exhaust hole 14 is three layers of stepped hole, in other execution mode of the present invention, also can adjust according to the minimum outer diameter size of the filler particles 32 of the thickness of the layout of product, substrate 10 and adhesive body 30 the step number of plies of exhaust hole 14.
At step S211, on substrate 10, make ground floor hole 141.When product is superimposed complete after, according to product layout, at substrate 10, make ground floor holes 141.In present embodiment, within ground floor hole 141, footpath d1 is 150um ~ 300um.In other embodiments, also can adjust according to the minimum outer diameter size of the filler particles 32 of the thickness of the layout of product, substrate 10 and adhesive body 30 size in footpath within described ground floor hole 141.Described ground floor hole 141 can adopt machine drilling, laser drilling or etched mode to complete.
At step S212, on the basis in ground floor hole 141, make second layer hole 142.In present embodiment, within described second layer hole 142, footpath d2 is 80um ~ 200um.Described second layer hole 142 also can adopt machine drilling, laser drilling or etched mode to complete.If adopt the mode of boring to complete, need to use than making less drill bit or the aperture in ground floor hole 141 to complete the making in described second layer hole 142.
At step S213, on the basis in second layer hole 142, make the 3rd layer of hole 143.If described the 3rd layer of hole 143 is last one deck hole, the internal diameter size in described the 3rd layer of hole 143 can not be too greatly to guarantee that described the 3rd layer of hole 143, by filler particles 32 obstructions of adhesive body 30, prevents that the resin 31 of adhesive body 30 from flowing out the bottom surface 12 of substrates 10.In present embodiment, within described the 3rd layer of hole, footpath d3 is 20um～60um.Described the 3rd layer of hole 143 also can adopt machine drilling, laser drilling or etched mode to complete.If adopt the mode of boring to complete, need to use than making less drill bit or the aperture in second layer hole 142 to complete the making in described the 3rd layer of hole 143.
At step S214, at the hole of exhaust hole 14 inwall plated metal.At the hole of exhaust hole 14 inwall plated metal, can increase the smoothness of wall within described exhaust hole 14, to prevent that gas from all being got rid of front described exhaust hole 14 and being stopped up by adhesive body 30.If the size of exhaust hole 14 is larger, can omit this step.
In other execution mode of the present invention, described exhaust hole 14 also can be used step-like drill bit to hole or adopt method one step of punching press to complete.
Encapsulating structure manufacture method of the present invention adopts machine drilling, laser drilling or etched mode that the exhaust hole 14 that internal diameter progressively dwindles is set on substrate 10, and utilize injecting glue forming technique in electronic component 20, to be embedded in adhesive body 30, processing procedure is simple, low cost of manufacture.
Claims (13)
1. an encapsulating structure, comprise substrate, be located at the adhesive body of the end face of described substrate and the electronic component being connected with described electrical property of substrate and coated described electronic component, it is characterized in that, the corresponding described electronic component part of described substrate is provided with a plurality of exhaust holes, within described exhaust hole, the end face of described substrate progressively dwindles along the bottom surface of described substrate without leave, and described exhaust hole stops that described adhesive body flows out the bottom surface of described substrate.
2. encapsulating structure as claimed in claim 1, is characterized in that, described adhesive body is filled described exhaust hole, and the minimum diameter of described exhaust hole is less than the minimum outer diameter of the filler particles of described adhesive body.
3. encapsulating structure as claimed in claim 1, is characterized in that, described exhaust hole has smooth inwall.
4. encapsulating structure as claimed in claim 1, is characterized in that, described exhaust hole is step-like.
5. encapsulating structure as claimed in claim 4, is characterized in that, described exhaust hole comprises ground floor hole, second layer hole and the 3rd layer of hole, and the bottom surface along described substrate progressively dwindles from the end face of described substrate for described ground floor hole, second layer hole and the 3rd layer of hole.
6. an encapsulating structure manufacture method, is characterized in that, comprising:
On substrate, make exhaust hole, within described exhaust hole, the end face of described substrate dwindles gradually along bottom surface without leave;
Described electronic component is placed in to described substrate to be provided with exhaust hole part and to be connected with described electrical property of substrate; And
By the coated described electronic component of adhesive body, described adhesive body is filled described exhaust hole, and described exhaust hole stops that described adhesive body flows out the bottom surface of described substrate.
7. encapsulating structure manufacture method as claimed in claim 6, is characterized in that, is also included in the hole inwall plated metal of described exhaust hole so that described exhaust hole has smooth inwall.
8. encapsulating structure manufacture method as claimed in claim 6, is characterized in that, the minimum diameter of described exhaust hole is less than the minimum outer diameter of the filler particles of described adhesive body.
9. encapsulating structure manufacture method as claimed in claim 6, is characterized in that, described exhaust hole is step-like.
10. encapsulating structure manufacture method as claimed in claim 9, is characterized in that, described exhaust hole is by being used step-like bit bore to complete.
11. encapsulating structure manufacture methods as claimed in claim 9, it is characterized in that, described exhaust hole comprises ground floor hole, second layer hole and the 3rd layer of hole, and the bottom surface along described substrate progressively dwindles from the end face of described substrate for described ground floor hole, second layer hole and the 3rd layer of hole.
12. encapsulating structure manufacture methods as claimed in claim 11, is characterized in that, the step of making exhaust hole on substrate comprises the following steps:
On described substrate, make described ground floor hole;
On the basis in described ground floor hole, make described second layer hole; And
On the basis in described second layer hole, make described the 3rd layer of hole.
13. encapsulating structure manufacture methods as claimed in claim 12, is characterized in that, described ground floor hole, second layer hole and the 3rd layer of hole complete by machine drilling or laser drilling or etched mode.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210309071.0A CN103633037A (en) | 2012-08-27 | 2012-08-27 | Encapsulation structure and manufacturing method thereof |
| TW101131277A TWI492682B (en) | 2012-08-27 | 2012-08-29 | Package structure and method of manufacture the same |
| US13/859,561 US8981571B2 (en) | 2012-08-27 | 2013-04-09 | Package assembly and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210309071.0A CN103633037A (en) | 2012-08-27 | 2012-08-27 | Encapsulation structure and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN103633037A true CN103633037A (en) | 2014-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210309071.0A Pending CN103633037A (en) | 2012-08-27 | 2012-08-27 | Encapsulation structure and manufacturing method thereof |
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| Country | Link |
|---|---|
| US (1) | US8981571B2 (en) |
| CN (1) | CN103633037A (en) |
| TW (1) | TWI492682B (en) |
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| CN106098570A (en) * | 2016-06-23 | 2016-11-09 | 江阴芯智联电子科技有限公司 | Cavity type plastic packaged module structure and manufacture method thereof |
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| CN109545754A (en) * | 2018-11-22 | 2019-03-29 | 京东方科技集团股份有限公司 | A kind of encapsulating structure of chip, packaging method, display device |
| CN113658920A (en) * | 2021-08-16 | 2021-11-16 | 长鑫存储技术有限公司 | Packaging substrate, semiconductor structure and manufacturing method of packaging substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6044473B2 (en) * | 2013-06-28 | 2016-12-14 | 株式会社デンソー | Electronic device and method for manufacturing the same |
| TWI576032B (en) | 2014-05-26 | 2017-03-21 | 旭德科技股份有限公司 | Substrate structure and manufacturing method thereof |
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| CN108074881B (en) * | 2016-11-10 | 2019-10-01 | 矽品精密工业股份有限公司 | Package-on-package structure |
| CN109545754A (en) * | 2018-11-22 | 2019-03-29 | 京东方科技集团股份有限公司 | A kind of encapsulating structure of chip, packaging method, display device |
| CN113658920A (en) * | 2021-08-16 | 2021-11-16 | 长鑫存储技术有限公司 | Packaging substrate, semiconductor structure and manufacturing method of packaging substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| US8981571B2 (en) | 2015-03-17 |
| US20140054792A1 (en) | 2014-02-27 |
| TWI492682B (en) | 2015-07-11 |
| TW201410094A (en) | 2014-03-01 |
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