CN103620730B - 用于控制抗蚀剂特征中的临界尺寸和粗糙度的方法和系统 - Google Patents

用于控制抗蚀剂特征中的临界尺寸和粗糙度的方法和系统 Download PDF

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Publication number
CN103620730B
CN103620730B CN201280027207.7A CN201280027207A CN103620730B CN 103620730 B CN103620730 B CN 103620730B CN 201280027207 A CN201280027207 A CN 201280027207A CN 103620730 B CN103620730 B CN 103620730B
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China
Prior art keywords
exposure
plasma
photoresist relief
ions
dose rate
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CN201280027207.7A
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English (en)
Chinese (zh)
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CN103620730A (zh
Inventor
卢多维克·葛特
约瑟·欧尔森
克里斯多夫·J·里维特
派崔克·M·马汀
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
CN201280027207.7A 2011-05-03 2012-04-26 用于控制抗蚀剂特征中的临界尺寸和粗糙度的方法和系统 Active CN103620730B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/099,432 2011-05-03
US13/099,432 US8354655B2 (en) 2011-05-03 2011-05-03 Method and system for controlling critical dimension and roughness in resist features
PCT/US2012/035218 WO2012151108A1 (en) 2011-05-03 2012-04-26 Method and system for controlling critical dimension and roughness in resist features

Publications (2)

Publication Number Publication Date
CN103620730A CN103620730A (zh) 2014-03-05
CN103620730B true CN103620730B (zh) 2016-02-24

Family

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CN201280027207.7A Active CN103620730B (zh) 2011-05-03 2012-04-26 用于控制抗蚀剂特征中的临界尺寸和粗糙度的方法和系统

Country Status (6)

Country Link
US (2) US8354655B2 (enExample)
JP (1) JP6091490B2 (enExample)
KR (1) KR101911330B1 (enExample)
CN (1) CN103620730B (enExample)
TW (1) TWI532071B (enExample)
WO (1) WO2012151108A1 (enExample)

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US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
CN104345568A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(上海)有限公司 减小光刻胶图形线宽粗糙度的方法
CN104465333B (zh) * 2013-09-17 2017-12-29 中芯国际集成电路制造(上海)有限公司 光刻胶图形的形成方法、晶体管栅极的形成方法
US9520267B2 (en) * 2014-06-20 2016-12-13 Applied Mateirals, Inc. Bias voltage frequency controlled angular ion distribution in plasma processing
US9837254B2 (en) 2014-08-12 2017-12-05 Lam Research Corporation Differentially pumped reactive gas injector
US9406535B2 (en) 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9536748B2 (en) 2014-10-21 2017-01-03 Lam Research Corporation Use of ion beam etching to generate gate-all-around structure
US10935889B2 (en) 2015-05-13 2021-03-02 Tokyo Electron Limited Extreme ultra-violet sensitivity reduction using shrink and growth method
US9779955B2 (en) * 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
DE102016119437B4 (de) * 2016-10-12 2024-05-23 scia Systems GmbH Verfahren zum Bearbeiten einer Oberfläche mittels eines Teilchenstrahls
DE102016119791A1 (de) * 2016-10-18 2018-04-19 scia Systems GmbH Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls
KR20180082851A (ko) * 2017-01-11 2018-07-19 삼성전자주식회사 반도체 소자의 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
CN113519071B (zh) 2019-02-28 2025-04-22 朗姆研究公司 利用侧壁清洁的离子束蚀刻
US11495436B2 (en) * 2020-04-30 2022-11-08 Tokyo Electron Limited Systems and methods to control critical dimension (CD) shrink ratio through radio frequency (RF) pulsing
US12354873B2 (en) * 2020-09-30 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multiple step directional patterning

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US20080182419A1 (en) * 2007-01-16 2008-07-31 Naoki Yasui Plasma processing method
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US7767977B1 (en) * 2009-04-03 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source

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US8354655B2 (en) * 2011-05-03 2013-01-15 Varian Semiconductor Equipment Associates, Inc. Method and system for controlling critical dimension and roughness in resist features

Patent Citations (3)

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CN101563759A (zh) * 2006-10-30 2009-10-21 日本航空电子工业株式会社 利用气体团簇离子束的固体表面加工方法
US20080182419A1 (en) * 2007-01-16 2008-07-31 Naoki Yasui Plasma processing method
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Also Published As

Publication number Publication date
US8698109B2 (en) 2014-04-15
US8354655B2 (en) 2013-01-15
KR20140025497A (ko) 2014-03-04
CN103620730A (zh) 2014-03-05
US20130135598A1 (en) 2013-05-30
TWI532071B (zh) 2016-05-01
JP6091490B2 (ja) 2017-03-08
WO2012151108A1 (en) 2012-11-08
US20120280140A1 (en) 2012-11-08
JP2014515889A (ja) 2014-07-03
KR101911330B1 (ko) 2018-12-19
TW201250410A (en) 2012-12-16

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