A kind of wideband high-power low-loss annular power distribution synthesizer
Technical field
The invention belongs to annular power distribution synthesizer technical field, in particular a kind of wideband high-power low-loss annular power distribution synthesizer.
Background technology
The efficient broadband power synthetic technique of microwave signal is the important component part in a plurality of fields such as large power test system, microwave and millimeter wave communication system and electromagnetic compatibility test, be solve microwave current millimeter wave universal signal source power output little, cannot meet the key technology that high-power signal needs wait problem.
Planar power synthesizer is a kind of by the microwave and millimeter wave circuit of the synthetic road signal energy output of multichannel input signal energy, and also Jiang Yi road signal energy is divided into multichannel output conversely, now also can be described as power divider.Traditional microwave and millimeter wave planar power distributes and combiner circuit is all generally with Lange coupler or Wilkinson power splitter, to add quarter-wave transformer to realize.Its major defect is, when working frequency range is widened, due to merit, divides the joint number of branch road and increases, and causes path to lengthen, and loss strengthens, and while especially applying as power synthesis circuit, high loss will directly cause the reduction greatly of power combined coefficient.
Figure 1 shows that the principle schematic of the more piece Wilkinson power splitter that a two-way equal proportion is distributed.This structure is plane three-port network, after electromagnetic wave signal is entered by input port 12, through a joint merit, divides loop 100 or more piece merit to divide behind loop 100 and 200, by two output ports, 10,11 equal proportion same-phases, is exported.In order to increase the isolation between working band width and two output ports 10 and 11, just must solve by increasing the joint number of isolation resistance, but because power division loop in this structure overlaps with separate loop, therefore, when merit is divided and when separate loop joint number increases, to cause the loss of power division/synthetic path to increase, thereby power division/synthetic efficiency is declined rapidly.
Existing planar circuit power division/synthetic technology, take Wilkinson power division/synthesizer as example, although it adopts multi-section structure can obtain wider working band and higher isolation, but its shortcoming is along with the increase of joint number, its insertion loss increases sharply thereupon, has caused power division and synthetic efficiency greatly to reduce; In addition, because power division loop in this structure overlaps with separate loop, the isolation resistance of loop inside is subject to the restriction of overall structure size, cannot accomplish increasing heat radiation area, and therefore, power capacity is very limited.Ruo Yi road amplifier is damaged, or when in two branch roads, the port match of any one branch road is bad, the power that the electromagnetic wave of its port reflection is added to isolation resistance two ends increases thereupon, therefore be difficult to guarantee that isolation resistance is not burnt because of high-power, although can be by the film resistor on microstrip circuit being replaced by thick-film resistor to increase its power capacity, but when increasing cost, radiating efficiency is difficult to effectively improve, thereby has caused this structure reliability when high power work or port mismatch to reduce.
Therefore, there is defect in prior art, needs to improve.
Summary of the invention
Technical problem to be solved by this invention is for the deficiencies in the prior art, and a kind of wideband high-power low-loss annular power distribution synthesizer is provided.
Technical scheme of the present invention is as follows:
A wideband high-power low-loss annular power distribution synthesizer, wherein, comprises a power division ring and at least one shading ring, and described shading ring is positioned at the outside of described power division ring.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, described shading ring is set to one.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, arranges an input port and two output ports on described power division ring; Described two output ports are connected with described power division ring by Section Point and the 3rd node; Described shading ring setting is connected with described power division ring by the 4th node and the 5th node; Described Section Point and described the 4th node are positioned at a side, and described the 3rd node and described the 5th node are positioned at opposite side.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, described Section Point is identical with described the 3rd node phase place; Described the 4th node is identical with described the 5th node phase place and all anti-phase with described input port; Path difference between described the 4th node and described the 5th node is half-wavelength; Path difference between described Section Point and described the 4th node is quarter-wave.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, arranges the film resistor of connecting between described the 4th node and described the 5th node.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, described shading ring is set to 2-4.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, is all symmetrical arranged two nodes and is connected with described power division ring or described shading ring on described shading ring.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, the film resistor of connecting respectively between described two nodes.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, described power division ring and described shading ring are all set to axial symmetry.
Adopt such scheme:
1, there is low-loss, broadband character, and between two branch roads, there is very high amplitude-phase consistency.Utilize the operation principle of circuited microstrip loop electric bridge, can effectively solve the problem that isolation resistance power capacity problem in traditional Wilkinson power division/synthesizer and insertion loss increase.
2, broadband in solving power division and synthesizing, high reliability, high efficiency and low-loss, at microwave and millimeter wave frequency band, because separate loop no longer overlaps with power division loop, but outside power division loop, therefore, path loss can be along with the increase of the joint number of shading ring and is increased, and owing to can increasing comparatively easily the area of isolation resistance, the electromagnetic wave of forward transmission and the conduction efficiency of the heat that reflected wave produces on isolation resistance are effectively improved, even if therefore isolation resistance employing is film resistor, also there is good radiating efficiency, thereby greatly improved the reliability of this arrangement works.
3,, under equivalent constructions size, than traditional Wilkinson power division/synthesizer, there is higher interport isolation, lower path loss and the larger advantages such as power capacity; Simultaneously, can also realize easily different working frequency range and the interport isolation of different index requests by changing the method for the joint number of shading ring, the radius that regulates shading ring or change isolation resistance resistance, structural design of the present invention is simple, easy to adjust, there is very strong engineering practicability.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of power splitter in prior art.
Fig. 2 is the present invention's annular power distribution synthesizer one embodiment schematic diagram.
Fig. 3 is another embodiment schematic diagram of the present invention's annular power distribution synthesizer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1
The structural representation of annular power division/synthetic technology of the present invention as shown in Figure 2.The ingenious operation principle that combines circuited microstrip loop electric bridge of this structure, its integral body is mainly comprised of a power division ring and one or more shading ring.It is improved to five road branched structures by Microstrip Loop Shang tetra-road branched structures in traditional circuited microstrip loop electric bridge, between node 3 and node 4, increases node 5 again.Making the path difference between node 5 and node 3 is quarter-wave λ g/4, and path difference between node 5 and node 4 is half wavelength lambda g/2.The impedance of power division ring is 50 Ω impedances
doubly, the radius of its ring is about the quarter-wave λ g/4 of centre frequency.When electromagnetic wave is inputted by
input port 12, the phase place that arrives node 2 and node 3 due to electromagnetic wave is identical and power etc. minute is exported, therefore two-way node 2 being connected with node 3 is as two output channels of power division/synthesizer, and its port is called respectively
output port 10 and output port 11.Because electromagnetic amplitude and the phase place of arrival node 4 and node 5 are all identical and all anti-phase with node 1 place, and node 4 and node 5 places, node 1 with respect to input is isolation end, therefore can be by a film resistor 6 of shading ring 22 series connection, two output branch roads at node 2 and node 3 places are played to the effect of isolation between two nodes.Arc angle on
output port 10 and
output port 11 is 120 degree, and on shading ring, arc angle is 150 degree, and the radius of their arcs is easy to try to achieve according to geometrical relationship.
Embodiment 2
On the basis of above-described embodiment, as shown in Figure 3, the present invention also provides its integral body mainly a power division ring 21 and two shading rings 22 and 23, to consist of.The two-way that power division ring 21 is connected is as two output channels of power division/synthesizer, and its port is called respectively output port 10 and output port 11.The film resistor 6 of connecting on shading ring 22, the film resistor 7 of connecting on shading ring 23, the signal that is loaded into isolation resistance two ends is very little, therefore the power consumption of isolation resistance carrying is very little, thereby has improved power capacity and the reliability of this structure.Meanwhile, owing to can regulating comparatively easily isolation resistance area, so isolation resistance is also without making thick-film resistor, thereby reduced production cost.
Embodiment 3
On the basis of above-described embodiment, further illustrate, a kind of wideband high-power low-loss annular power distribution synthesizer, wherein, comprises a power division ring and at least one shading ring, described shading ring is positioned at the outside of described power division ring.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, described shading ring is set to one.
Described wideband high-power low-loss annular power distribution synthesizer, wherein, arranges an input port and two output ports on described power division ring; Described two output ports are connected with described power division ring by Section Point and the 3rd node; Described shading ring setting is connected with described power division ring by the 4th node and the 5th node; Described Section Point and described the 4th node are positioned at a side, and described the 3rd node and described the 5th node are positioned at opposite side.Described Section Point is identical with amplitude with described the 3rd node phase place; Described the 4th node is identical with described the 5th node phase place and all anti-phase with described input port; Path difference between described the 4th node and described the 5th node is half-wavelength; Path difference between described Section Point and described the 4th node is quarter-wave.Between described the 4th node and described the 5th node, the film resistor of connecting is set.Described shading ring is set to 2-4.On described shading ring, being all symmetrical arranged two nodes is connected with described power division ring or described shading ring.The film resistor of connecting respectively between described two nodes.Described power division ring and described shading ring are all set to axial symmetry.
In sum, very little owing to being loaded into the signal at isolation resistance two ends in this technical scheme, therefore the power consumption of isolation resistance carrying is very little, thereby improved power capacity and the reliability of this structure.Meanwhile, owing to can regulating comparatively easily isolation resistance area, so isolation resistance is also without making thick-film resistor, thereby reduced production cost.In addition, the method of distributing ring and shading ring radius by regulating power, be adjusted to very easily different working frequency range, can also be by increasing the method for shading ring joint number, increase very easily working band width, meanwhile, also can be by increasing shading ring joint number and regulating the method for film resistor resistance to improve two isolations between output branch road.Because shading ring is placed in the outside of power division ring, so the increase of shading ring joint number can't increase the path of two power division branch roads, thereby can not reduce the loss of power division or synthetic path.
Should be understood that, for those of ordinary skills, can be improved according to the above description or convert, and all these improvement and conversion all should belong to the protection range of claims of the present invention.