CN103618044B - Piezoelectric cantilever sensor structure making process - Google Patents
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- CN103618044B CN103618044B CN201310631537.3A CN201310631537A CN103618044B CN 103618044 B CN103618044 B CN 103618044B CN 201310631537 A CN201310631537 A CN 201310631537A CN 103618044 B CN103618044 B CN 103618044B
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000012528 membrane Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 229920005591 polysilicon Polymers 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000001039 wet etching Methods 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 230000000717 retained effect Effects 0.000 claims description 5
- 238000010992 reflux Methods 0.000 claims description 4
- 238000003980 solgel method Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 39
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The present invention relates to a kind of piezoelectric cantilever sensor structure making process, include the following steps: to define a sacrificial layer fill area on a silicon substrate, etches the sacrificial layer fill area and form a groove；Deposit a sacrificial layer on a silicon substrate to fill groove；One layer of polysilicon membrane is deposited on a silicon substrate；Electrode under being formed on polysilicon membrane；Piezoelectric membrane is formed on the bottom electrode；Top electrode is formed on piezoelectric membrane；One layer of silicon nitride is grown as etching barrier layer in the body structure surface, is etched except top electrode region, the silicon nitride above sacrificial layer, to form a release window；The sacrificial layer in groove is removed by release window, forms the structure.Which raises the compatibility of piezoelectric cantilever sensor manufacturing process and silicon integrated circuit technique, avoid body silicon substrate and discharge the problem of forming the pollution easily occurred in cantilever beam process and micro-structure and substrate adhesion from the back side with wet etching.
Description
Technical field
The present invention relates to semiconductor processing and manufacturing technical fields, more specifically to a kind of piezoelectric cantilever sensor
Structure making process.
Background technique
Currently, piezoelectric principle is to realize a kind of new way of microsensor.By piezoelectric effect, power, acceleration etc. are to be measured
Amount can directly on piezoelectric membrane output voltage, and inverse piezoelectric effect allow microsensor by apply external voltage drive it is micro-
Structure generates displacement, to be provided simultaneously with actuator function.Using microsensor/actuator made of piezoelectric film material and now
Some silica-base material microsensor/actuators, which are compared, has unrivaled advantage, is the frontier of microsensor research and development.
Sensor based on piezoelectric effect is a kind of self-power generation type and electromechanical transformation formula sensor.Its sensing element by
Piezoelectric material is made；Piezoelectric material stress rear surface generates charge, and charge amplifies through charge amplifier and measuring circuit and transformation
Become the electricity output for being proportional to suffered external force after impedance.As measuring force and the non-electrical physical quantity that power can be transformed to, piezoelectric type
The advantages of sensor is bandwidth, high sensitivity, signal-to-noise ratio is high, structure is simple, reliable operation and light-weight etc..
In the prior art, certain achievement is had been achieved in terms of the theoretical research of piezoelectric membrane micro element, still
The piezoelectricity micro element that can really apply in practice is seldom, and critical issue includes: the microfabrication first is that piezoelectric membrane
Very good solution is not yet received in technology and piezoelectric membrane and the compatibility issue of silicon integrated circuit technique；Second is that most piezoelectricity
Sensor uses bulk silicon technological, and the formation of micro-structure need to use silicon substrate back side etching process, and complex process is difficult to control, and current
The integrated circuit technology generallyd use is incompatible, and the problem of micro-structure is with substrate adhesion easily occurs, and yield rate is caused to reduce.
Therefore, a kind of effectively reliable piezoelectric cantilever sensor structure making process is needed in the industry.
Summary of the invention
The purpose of the present invention is to provide a kind of piezoelectric cantilever sensor structure making process.
To achieve the above object, a technical solution of the invention is as follows:
A kind of piezoelectric cantilever sensor structure making process includes the following steps: to define one a), on a silicon substrate sacrificial
Domestic animal layer fill area, etches the sacrificial layer fill area and forms a groove；B), a sacrificial layer is deposited on a silicon substrate to fill groove；
C), one layer of polysilicon membrane is deposited on a silicon substrate；D), electrode under being formed on polysilicon membrane；E), formed on the bottom electrode
Piezoelectric membrane；F), top electrode is formed on piezoelectric membrane；G), one layer of silicon nitride is grown as etch stopper in the body structure surface
Layer etches except top electrode region, the silicon nitride above sacrificial layer, to form a release window；H), removed by release window
Sacrificial layer in groove forms the structure.
Preferably, step a) is specifically included: being defined sacrificial layer fill area through gluing, exposure, developing process, is carved with dry method
Etching technique etching sacrificial layer fill area forms groove.
Preferably, step b) is specifically included: with chemical vapor deposition method deposited sacrificial layer on a silicon substrate, and being carried out flat
Smoothization reflux；Sacrificial layer carve with dry etch process, and is removed in the surface of silicon except sacrificial layer fill area
Sacrificial layer, make sacrificial layer with except sacrificial layer fill area silicon substrate height be consistent.
Preferably, step d) is specifically included: with the direct stripping technology of photoresist, forming required lower electricity through exposure and development
Pole figure shape；The photoresist on lower pole region is removed, the photoresist on the silicon substrate except lower pole region is retained；With physics
Vapor deposition method deposits a Pt/Ti film in body structure surface；The structure is immersed in acetone soln and carries out photoresist lift off, with
Form lower electrode.
Preferably, step e) is specifically included: preparing to form a piezoelectric membrane in the body structure surface with sol-gel process；
Piezoelectric membrane is patterned with dry etch process.
Preferably, step g) is specifically included: the polysilicon membrane except etching removal top electrode region；With chemical vapor deposition
Product method grows layer of sin in body structure surface, as etching barrier layer；With dry etching method etch top electrode region except,
SiN on sacrificial layer forms release window.
Piezoelectric cantilever sensor structure making process provided by the invention, using surface sacrificial process and isotropism
Wet-etching technology discharges Piezoelectric Cantilever Beams from front, makes full use of the CMOS technology generallyd use to complete, simple process
Controllably, the compatibility for improving piezoelectric cantilever sensor manufacturing process Yu silicon integrated circuit technique avoids body silicon substrate use
Wet etching discharges the pollution problem to be formed and easily be occurred in cantilever beam process from the back side, while avoiding sensor structure and substrate
The problem of adhesion.
Detailed description of the invention
Fig. 1 shows the piezoelectric cantilever sensor structure making process flow diagram of one embodiment of the invention offer；
Fig. 2A -2L shows each middle spacer step of piezoelectric cantilever sensor structure making process of the above embodiment of the present invention offer
The structural profile illustration in rapid.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
As shown in Figure 1, the piezoelectric cantilever sensor structure making process that one embodiment of the invention provides includes following work
Skill step:
Step S10, a sacrificial layer fill area is defined on silicon substrate 10, is etched the sacrificial layer fill area and is formed a groove
101。
Wherein, substrate material can be N-type or p-type twin polishing silicon wafer.
Specifically, as shown in Figure 2 A, in the step, sacrificial layer fill area first is defined through gluing, exposure, developing process,
Groove 101 is formed with dry etch process etching sacrificial layer fill area again.
Step S11, a sacrificial layer 20 is deposited on a silicon substrate to fill groove.
Specifically, which specifically includes: with chemical vapor deposition method deposited sacrificial layer 20 on a silicon substrate, and carrying out
Planarization reflux, at this point, sensor structure is as shown in Figure 2 B；Sacrificial layer 20 carve with dry etch process, and is removed
The sacrificial layer in surface of silicon except sacrificial layer fill area makes the silicon substrate 10 except sacrificial layer 20 and sacrificial layer fill area
Height is consistent, at this point, sensor structure is as shown in Figure 2 C.
Wherein, sacrificial layer material can be BPSG, BSG, PSG, SOG for providing in the prior art or in which two or more of
Mixing material；For reflux temperature at 850 DEG C -900 DEG C, return time is about -120 minutes 60 minutes.
Step S12, one layer of polysilicon membrane 30 is deposited on silicon substrate 10.
It is preferred that the thickness of polysilicon membrane is about 1 micron -2 microns with low pressure heat growth method deposited polycrystalline silicon thin film 30,
At this point, sensor structure is as shown in Figure 2 D.
Step S13, electrode under being formed on polysilicon membrane.
Specifically, the step include it is following step by step:
With the direct stripping technology of photoresist, required lower electrode pattern is formed through exposure and development；
The photoresist on lower pole region is removed, the photoresist 40 on the silicon substrate except top electrode region is retained, this
When, sensor structure is as shown in Figure 2 E；
A Pt/Ti film is deposited in body structure surface with physical gas-phase deposite method；Wherein, Pt film thickness is about 0.05 micro-
Rice, Ti film thickness is about 0.01 micron -0.02 micron；
The structure is immersed in acetone soln and carries out photoresist lift off, so that the Pt/ of the photoresist 40 and its top that retain
Ti film separation, finally lower pole region (i.e. there are the regions of photoresist) formed under electrode 50, at this point, sensor structure
As shown in Figure 2 F.
Step S14, piezoelectric membrane 60 is formed on lower electrode 50.
Specifically, it first prepares to form a piezoelectric membrane 60 in the body structure surface with sol-gel process, then with dry etching
Technique is patterned piezoelectric membrane 60, remaines in it only on lower electrode 50, at this point, sensor structure such as Fig. 2 G institute
Show.Wherein, the preparation of piezoelectric membrane 60 is not limited to sol-gel process, with any piezoelectric membrane provided in the prior art
Preparation method；In dry etch process, using containing Cl2/Ar/O2Gas piezoelectric membrane 60 is patterned.
Further, piezoelectric membrane is PZT piezoelectric membrane, and thickness is about 2 microns.
Step S15, top electrode is formed on piezoelectric membrane.
Similar with preparing for lower electrode, which specifically includes:
With the direct stripping technology of photoresist, required top electrode figure is formed through exposure and development；
The photoresist on top electrode region is removed, the photoresist 40 on the silicon substrate except top electrode region is retained, this
When, sensor structure is as illustrated in figure 2h；
A Pt/Ti film is deposited in body structure surface with physical gas-phase deposite method；Wherein, Pt film thickness is about 0.05 micro-
Rice, Ti film thickness is about 0.01 micron -0.02 micron；
The structure is immersed in acetone soln and carries out photoresist lift off, to form top electrode 70, at this point, sensor structure
As shown in figure 2i.
Step S16, the body structure surface grow one layer of silicon nitride be used as etching barrier layer, etching top electrode region except,
Silicon nitride above sacrificial layer, to form a release window.
Specifically, step S16 is specifically included:
With photoresist masking, the polysilicon membrane 30 except top electrode region is removed with anisotropic dry etching；
Layer of sin film 80 is grown in the body structure surface with chemical vapor deposition method, as etching barrier layer, at this point,
The structure is as shown in fig. 2j；Wherein, 80 thickness of SiN film is about 0.05 micron -0.1 micron；
It is etched except top electrode region with dry etching method, the SiN film on sacrificial layer 20, forms release window 801,
At this point, the structure is as shown in figure 2k.
Step S17, the sacrificial layer in groove is removed by release window, forms the structure.
In the step, with the sacrificial layer 20 in isotropism wet-etching technology removal groove 101, it is outstanding to ultimately form piezoelectricity
Arm beam sensor structure, as shown in figure 2l.
In the embodiment, using surface sacrificial process and isotropism wet-etching technology, piezoelectric micromotor is discharged from front
Cantilever beam structure can be completed with conventional CMOS technology, and simple process is controllable；And improve piezoelectric cantilever sensor manufacture
The compatibility of technique and silicon integrated circuit technique avoids body silicon substrate and discharges to form cantilever beam process from the back side with wet etching
In the pollution problem that easily occurs, can in industry large-scale promotion application.
Above-described to be merely a preferred embodiment of the present invention, the patent that the embodiment is not intended to limit the invention is protected
Range is protected, therefore all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in
In protection scope of the present invention.
Claims (8)
1. a kind of piezoelectric cantilever sensor structure making process, includes the following steps:
A), a sacrificial layer fill area is defined on a silicon substrate, is etched the sacrificial layer fill area and is formed a groove；
B), a sacrificial layer is deposited on the silicon substrate to fill the groove；
C), one layer of polysilicon membrane is deposited on the silicon substrate；
D), electrode under being formed on the polysilicon membrane；
E), piezoelectric membrane is formed on the lower electrode；
F), top electrode is formed on the piezoelectric membrane；
G), etching removes the polysilicon membrane except the top electrode region；With chemical vapor deposition method in the structure table
It looks unfamiliar long layer of sin, as etching barrier layer；It is etched except the top electrode region with dry etching method, the sacrificial layer
On SiN, formed release window；
H), the sacrificial layer in the groove is removed with isotropism wet-etching technology, forms the structure.
2. manufacturing method as described in claim 1, which is characterized in that the step a) is specifically included: through gluing, exposure, showing
Shadow technique defines the sacrificial layer fill area, etches the sacrificial layer fill area with dry etch process and forms the groove.
3. manufacturing method as described in claim 1, which is characterized in that the step b) is specifically included: using chemical vapor deposition
Method deposits the sacrificial layer on the silicon substrate, and carries out planarization reflux；With dry etch process to the sacrificial layer
Carve, and remove the sacrificial layer in the surface of silicon except the sacrificial layer fill area, make the sacrificial layer with it is described
Silicon substrate height except sacrificial layer fill area is consistent.
4. manufacturing method as described in claim 1, which is characterized in that the step c) is specifically included: with the thermally grown side of low pressure
Method deposits the polysilicon membrane.
5. manufacturing method as described in claim 1, which is characterized in that the step d) is specifically included: directly being shelled with photoresist
Separating process forms required lower electrode pattern through exposure and development；The photoresist on the lower pole region is removed, institute is retained
State the photoresist on the silicon substrate except lower pole region；A Pt/ is deposited in the body structure surface with physical gas-phase deposite method
Ti film；The structure is immersed in acetone soln and carries out photoresist lift off, to form the lower electrode.
6. manufacturing method as described in claim 1, which is characterized in that the step e) is specifically included: with sol-gel process
It prepares to form a piezoelectric membrane in the body structure surface；The piezoelectric membrane is patterned with dry etch process.
7. manufacturing method as described in claim 1, which is characterized in that the step f) is specifically included: directly being shelled with photoresist
Separating process forms required top electrode figure through exposure and development；The photoresist on the top electrode region is removed, institute is retained
State the photoresist on the silicon substrate except top electrode region；A Pt/ is deposited in the body structure surface with physical gas-phase deposite method
Ti film；The structure is immersed in acetone soln and carries out photoresist lift off, to form the top electrode.
8. the manufacturing method as described in any one of claims 1 to 7, which is characterized in that the piezoelectric membrane is that PZT piezoelectricity is thin
Film.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105514258A (en) * | 2015-12-10 | 2016-04-20 | 上海集成电路研发中心有限公司 | Piezoelectric cantilever beam sensor structure and manufacturing method thereof |
| CN105428519A (en) * | 2015-12-17 | 2016-03-23 | 上海集成电路研发中心有限公司 | Multilayer piezoelectric thin film cantilever beam sensor and preparation method therefor |
| CN112151511A (en) * | 2020-08-17 | 2020-12-29 | 中国科学院微电子研究所 | Semiconductor structure and preparation method thereof |
| CN112340695A (en) * | 2020-11-05 | 2021-02-09 | 沈阳工业大学 | Polysilicon cantilever beam array structure and preparation method and application thereof |
| CN112744782B (en) * | 2020-12-30 | 2024-01-30 | 江西德瑞光电技术有限责任公司 | Preparation method of micro-cantilever |
| CN113120855A (en) * | 2021-04-14 | 2021-07-16 | 上海芯物科技有限公司 | Preparation method of cavity structure and micro-electro-mechanical system sensor |
| CN113381717B (en) * | 2021-04-29 | 2023-04-07 | 天津大学 | Piezoelectric MEMS silicon resonator with beam structure, forming method thereof and electronic device |
| WO2022226911A1 (en) * | 2021-04-29 | 2022-11-03 | 天津大学 | Piezoelectric mems silicon resonator and forming method therefor, and electronic device |
| CN115951509B (en) * | 2023-03-13 | 2023-06-02 | 济南晶正电子科技有限公司 | Electro-optical crystal film, preparation method and electronic element |
| CN117176104B (en) * | 2023-11-01 | 2024-01-30 | 镭友芯科技(苏州)有限公司 | Resonator based on lithium tantalate film and forming method thereof |
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| CN102259820A (en) * | 2010-05-27 | 2011-11-30 | 上海华虹Nec电子有限公司 | Cavity structure, manufacturing method of cavity structure and manufacturing method of pressure-sensitive sensor |
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| US7960900B2 (en) * | 2004-06-14 | 2011-06-14 | Stmicroelectronics S.A. | Assembly of a microswitch and of an acoustic resonator |
| US7888844B2 (en) * | 2009-06-30 | 2011-02-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Temperature control of micromachined transducers |
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| CN1517295A (en) * | 2002-09-26 | 2004-08-04 | ���ǵ�����ʽ���� | Manufacturing method of flexible micro-electromechanical system changer |
| CN1970434A (en) * | 2006-12-13 | 2007-05-30 | 清华大学 | Method for manufacturing piezoresistance type microcantilever beam sensor on SOI silicon sheet |
| CN102259820A (en) * | 2010-05-27 | 2011-11-30 | 上海华虹Nec电子有限公司 | Cavity structure, manufacturing method of cavity structure and manufacturing method of pressure-sensitive sensor |
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