CN103612430A - Preparation method of dielectric-metal interference type selective absorption film - Google Patents
Preparation method of dielectric-metal interference type selective absorption film Download PDFInfo
- Publication number
- CN103612430A CN103612430A CN201310567859.6A CN201310567859A CN103612430A CN 103612430 A CN103612430 A CN 103612430A CN 201310567859 A CN201310567859 A CN 201310567859A CN 103612430 A CN103612430 A CN 103612430A
- Authority
- CN
- China
- Prior art keywords
- layer
- preparation
- type selective
- metal
- medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a preparation method of a dielectric-metal interference type selective absorption film. The preparation method is characterized by comprising the following steps: (A) performing magnetron sputtering on a substrate through a direct-current magnetron sputtering method to form a reflective layer; (B) with oxygen as reaction gas, performing magnetron sputtering on the reflective layer in the step (A) to form a dielectric layer; (C) performing magnetron sputtering on the dielectric layer in the step (B) through the direct-current magnetron sputtering method to form a semitransparent metal layer. The invention aims to overcome the defects in the prior art and provides the preparation method of the dielectric-metal interference type selective absorption film, which is simple in process, convenient to operate and relatively low in production cost.
Description
Technical field
The present invention relates to a kind of preparation method of medium-metal interfere type selective absorbing film.
Background technology
The preparation method of existing medium-metal interfere type selective absorbing film, complex process, complicated operation, is unfavorable for producing, and can not meet Production requirement.So the preparation method of existing medium-metal interfere type selective absorbing film awaits further perfect.
Summary of the invention
The object of the invention is, in order to overcome weak point of the prior art, provides a kind of technique simple, easy to operate, the preparation method of medium-metal interfere type selective absorbing film that production cost is relatively low.
In order to achieve the above object, the present invention adopts following scheme:
A preparation method for medium-metal interfere type selective absorbing film, is characterized in that comprising the following steps:
Method magnetron sputtering reflecting layer in substrate of A, employing magnetically controlled DC sputtering;
B, adopt oxygen as reacting gas, magnetron sputtering dielectric layer on the reflecting layer in steps A;
Magnetron sputtering semi-transparent metal layer on the dielectric layer of the method for C, employing magnetically controlled DC sputtering in step B.
The preparation method of a kind of medium-metal interfere type selective absorbing film as above, is characterized in that substrate described in steps A is a kind of in stainless steel, copper, aluminium.
The preparation method of a kind of medium-metal interfere type selective absorbing film as above, is characterized in that reflecting layer described in steps A is a kind of in copper layer, aluminium lamination, silver layer, tungsten layer, molybdenum layer.
The preparation method of a kind of medium-metal interfere type selective absorbing film as above, the thickness that it is characterized in that described reflecting layer is 250-350nm.
The preparation method of a kind of medium-metal interfere type selective absorbing film as above, is characterized in that dielectric layer described in step B is SiO
2layer or Al
2o
3layer.
The preparation method of a kind of medium-metal interfere type selective absorbing film as above, is characterized in that semi-transparent metal layer described in step C is Mo layer, W layer, a kind of in Cr layer.
The preparation method of a kind of medium-metal interfere type selective absorbing film as above, the thickness that it is characterized in that described semi-transparent metal layer is 8-15nm.
In sum, beneficial effect of the present invention:
Process of the present invention is simple, easy to operate, and production cost is relatively low.
The specific embodiment
Below in conjunction with the specific embodiment, the present invention is described further:
Embodiment 1
The preparation method of a kind of medium-metal of the present invention interfere type selective absorbing film, comprises the following steps:
Method magnetron sputtering reflecting layer in substrate of A, employing magnetically controlled DC sputtering; Described substrate is stainless steel.Described reflecting layer is copper layer.The thickness in described reflecting layer is 250nm.
B, adopt oxygen as reacting gas, magnetron sputtering dielectric layer on the reflecting layer in steps A; Described dielectric layer is SiO
2layer.Can adopt direct current reaction magnetron sputtering: target Si;
Magnetron sputtering semi-transparent metal layer on the dielectric layer of the method for C, employing magnetically controlled DC sputtering in step B.Described semi-transparent metal layer is Mo layer.The thickness of described semi-transparent metal layer is 8-15nm.
Embodiment 2
The preparation method of a kind of medium-metal of the present invention interfere type selective absorbing film, comprises the following steps:
Method magnetron sputtering reflecting layer in substrate of A, employing magnetically controlled DC sputtering; Described substrate is copper.Described reflecting layer is aluminium lamination.The thickness in described reflecting layer is 300nm.
B, adopt oxygen as reacting gas, magnetron sputtering dielectric layer on the reflecting layer in steps A; Described dielectric layer is Al
2o
3layer.Direct current reaction magnetron sputtering: target Al target.
Magnetron sputtering semi-transparent metal layer on the dielectric layer of the method for C, employing magnetically controlled DC sputtering in step B.Described semi-transparent metal layer is W layer, and the thickness of described semi-transparent metal layer is 8-15nm.
Embodiment 3
The preparation method of a kind of medium-metal of the present invention interfere type selective absorbing film, comprises the following steps:
Method magnetron sputtering reflecting layer in substrate of A, employing magnetically controlled DC sputtering; Described substrate is aluminium.Described reflecting layer is molybdenum layer.The thickness in described reflecting layer is 350nm.
B, adopt oxygen as reacting gas, magnetron sputtering dielectric layer on the reflecting layer in steps A; Described dielectric layer is SiO
2layer.Rf magnetron sputtering: target SiO2, need oxygenation to supplement former target and be coated with the oxygen loss situation in process, thickness is in 100nm left and right
Magnetron sputtering semi-transparent metal layer on the dielectric layer of the method for C, employing magnetically controlled DC sputtering in step B.Described semi-transparent metal layer is Cr layer.The thickness of described semi-transparent metal layer is 15nm.
Medium-metal interference thin film has utilized interference of light principle, deielectric-coating and absorbing composite membrane, metal substrate or bottom film by non-absorption form, and strictly control refractive index and the thickness of every tunic, make it to visible range, produce interference effect, the reflectivity of reduction to sunlight wavelength core, in visible range, produce a broad absworption peak, as Al
2o
3-Mox-Al
2o
3(AMA) trilamellar membrane, AlN-Al/Al multilayer film, Al
2o
3-AlCuFe-Al
2o
3-Cu composite multilayer membrane etc.Metallic substrate layer has Cu, Al, Fe, Ni, Cr, Mo, Au etc., and dielectric layer can be Al
2o
3, SiO
2, CeO
2, PbS, ZnS, NiS etc.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and description, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (7)
1. a preparation method for medium-metal interfere type selective absorbing film, is characterized in that comprising the following steps:
Method magnetron sputtering reflecting layer in substrate of A, employing magnetically controlled DC sputtering;
B, adopt oxygen as reacting gas, magnetron sputtering dielectric layer on the reflecting layer in steps A;
Magnetron sputtering semi-transparent metal layer on the dielectric layer of the method for C, employing magnetically controlled DC sputtering in step B.
2. the preparation method of a kind of medium-metal interfere type selective absorbing film according to claim 1, is characterized in that substrate described in steps A is a kind of in stainless steel, copper, aluminium.
3. the preparation method of a kind of medium-metal interfere type selective absorbing film according to claim 1, is characterized in that reflecting layer described in steps A is a kind of in copper layer, aluminium lamination, silver layer, tungsten layer, molybdenum layer.
4. according to the preparation method of a kind of medium-metal interfere type selective absorbing film described in claim 1 or 3, the thickness that it is characterized in that described reflecting layer is 250-350nm.
5. the preparation method of a kind of medium-metal interfere type selective absorbing film according to claim 1, is characterized in that dielectric layer described in step B is SiO
2layer or Al
2o
3layer.
6. the preparation method of a kind of medium-metal interfere type selective absorbing film according to claim 1, is characterized in that semi-transparent metal layer described in step C is Mo layer, W layer, a kind of in Cr layer.
7. according to the preparation method of a kind of medium-metal interfere type selective absorbing film described in claim 1 or 6, the thickness that it is characterized in that described semi-transparent metal layer is 8-15nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310567859.6A CN103612430A (en) | 2013-11-14 | 2013-11-14 | Preparation method of dielectric-metal interference type selective absorption film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310567859.6A CN103612430A (en) | 2013-11-14 | 2013-11-14 | Preparation method of dielectric-metal interference type selective absorption film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103612430A true CN103612430A (en) | 2014-03-05 |
Family
ID=50163162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310567859.6A Pending CN103612430A (en) | 2013-11-14 | 2013-11-14 | Preparation method of dielectric-metal interference type selective absorption film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103612430A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104691028A (en) * | 2015-03-20 | 2015-06-10 | 武汉理工大学 | High-reflectivity thermal insulating layer material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1256717A (en) * | 1997-05-21 | 2000-06-14 | 瑞士铝业技术及管理有限公司 | Packaging material |
| JP2010277094A (en) * | 2004-11-24 | 2010-12-09 | Sumitomo Metal Mining Co Ltd | Method for producing absorption type multi-layer film nd filter |
| CN102650474A (en) * | 2012-05-23 | 2012-08-29 | 北京天瑞星光热技术有限公司 | High-temperature selective solar energy-absorbing coating with Cr2O3-Al2O3 dual-ceramic structure and preparation method thereof |
| CN103184410A (en) * | 2011-12-29 | 2013-07-03 | 鸿富锦精密工业（深圳）有限公司 | Film-coating member and manufacturing method thereof |
| CN103388917A (en) * | 2013-07-10 | 2013-11-13 | 山东大学（威海） | Solar selective absorbing coating and preparation method thereof |
-
2013
- 2013-11-14 CN CN201310567859.6A patent/CN103612430A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1256717A (en) * | 1997-05-21 | 2000-06-14 | 瑞士铝业技术及管理有限公司 | Packaging material |
| JP2010277094A (en) * | 2004-11-24 | 2010-12-09 | Sumitomo Metal Mining Co Ltd | Method for producing absorption type multi-layer film nd filter |
| CN103184410A (en) * | 2011-12-29 | 2013-07-03 | 鸿富锦精密工业（深圳）有限公司 | Film-coating member and manufacturing method thereof |
| CN102650474A (en) * | 2012-05-23 | 2012-08-29 | 北京天瑞星光热技术有限公司 | High-temperature selective solar energy-absorbing coating with Cr2O3-Al2O3 dual-ceramic structure and preparation method thereof |
| CN103388917A (en) * | 2013-07-10 | 2013-11-13 | 山东大学（威海） | Solar selective absorbing coating and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104691028A (en) * | 2015-03-20 | 2015-06-10 | 武汉理工大学 | High-reflectivity thermal insulating layer material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109305763B (en) | High-transmittance single-silver low-emissivity coated glass | |
| CN101876490A (en) | Solar energy medium-high temperature selective heat absorbing coating | |
| CN102555330A (en) | Low-radiation coated glass with multiple function layers | |
| CN201809285U (en) | Single-silver coated glass | |
| CN103612430A (en) | Preparation method of dielectric-metal interference type selective absorption film | |
| CN101894600A (en) | Process for preparing copper-clad aluminum laminated busbar | |
| CN106746733A (en) | A kind of double silver-layer low-radiation glass of low transmission antiradar reflectivity | |
| CN102501450A (en) | Light-transmission single-silver low radiation coated glass and manufacturing method for same | |
| CN103614696B (en) | A kind of preparation method of etching resistant film | |
| EP2682375A1 (en) | Low emissivity thin film, low emissivity coated glass and producing method thereof | |
| CN103613286A (en) | Preparation method of golden thin film | |
| CN203238177U (en) | Tri-sliver low-radiation coated glass capable of being tempered | |
| CN103641333B (en) | A kind of preparation method of Super high-permeability high-performance low-radiation membrane | |
| CN103265182A (en) | Manufacturing method of low emissivity (Low-e) glass | |
| CN104669712B (en) | A kind of Ag alloys thermal isolation film and preparation method thereof | |
| CN207808650U (en) | A kind of fenestrated membrane with corrosion-resistant function | |
| CN106116176A (en) | A kind of coral magnetron sputtering low radiation coated glass production technology | |
| CN103808049B (en) | A kind of radiation-selective absorber coatings and preparation method thereof | |
| JP5110723B1 (en) | Transparent insulation sheet | |
| CN207193127U (en) | A kind of color low emissivity glass | |
| CN104385702A (en) | Double-Ag LOW-E coated glass | |
| CN104818466A (en) | Preparation method of Mo/Al/Mo metal film | |
| JP2012083686A (en) | Transparent heat insulation sheet and method for producing the same | |
| CN103072334B (en) | Binary-iodide-doped thermochromic decorative layer | |
| CN202344932U (en) | Light-transparent single silver low radiation coated glass |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140305 |