CN103608966A

CN103608966A - Pinhole-free dielectric thin film fabrication

Info

Publication number: CN103608966A
Application number: CN201280029540.1A
Authority: CN
Inventors: 冲·蒋; 秉圣·利奥·郭
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2011-06-17
Filing date: 2012-06-14
Publication date: 2014-02-26
Anticipated expiration: 2032-06-14
Also published as: JP2014524974A; KR20140044860A; WO2012174260A2; CN103608966B; US9593405B2; KR101942961B1; CN106947948A; US20120318664A1; WO2012174260A3; JP6076969B2

Abstract

A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.

Description

Free of pinholes dielectric film is manufactured

The cross reference of related application

The application requires to enjoy the U.S. Provisional Application the 61/498th of submitting on June 17th, 2011, the rights and interests of No. 480, and described U.S. Provisional Application is all incorporated to herein with way of reference.

Technical field

Embodiments of the present invention are usually directed to thin film deposition, and more particularly relate to for reducing the method and apparatus of dielectric film pin hole (pinhole).

Background technology

There are many a plurality of conductive layers that comprise---for example, hull cell (thin film batteries; The film apparatus of the dielectric film TFBs) and between electrochromics (electrochromic) device.About these devices, the pin hole in described dielectric film may damage apparatus function.For example, the pin hole in described dielectric film may reduce the puncture voltage of described device, or even worse also can cause the short circuit between each conductive layer and cause described device to become invalid.

Fig. 1 illustrates typical hull cell (thin film battery; TFB) profile.The anode collector that TFB apparatus structure 100 is had (anode current collector) 103 and cathode collector 102 (cathode current collector) are formed on substrate 101, then form negative electrode 104, electrolyte 105 and anode 106; But also described device can be manufactured and there is described negative electrode, electrolyte and the anode reversing the right order.In addition, can distinguish deposition cathode current-collector (cathode current collector; CCC) and anode collector (anode current collector; ACC).For example, can before the described negative electrode of deposition, deposit CCC, and can after the described electrolyte of deposition, deposit ACC.Can cover described device with encapsulation (encapsulation) layer 107, with protection of the environment sensitive layer, avoid oxidant impact.Can be referring to for example N.J.Dudney, Materials Science and Engineering(< < Materials Science and Engineering > >) B116, (2005) 245-249.Should note forming layer in the TFB device shown in Fig. 1 does not draw in proportion.

In the typical TFB apparatus structure of all apparatus structures as shown in Figure 1 and so on,---dielectric material such as lithium phosphorus nitrogen oxide (LiPON)---is to be clipped in two electrodes---between anode and negative electrode to described electrolyte.For depositing the conventional method of LiPON, be: at N ₂in environment, carry out Li ₃pO ₄the physical vapour deposition (PVD) of target (physical vapor deposition; PVD) radio frequency (radio frequency; RF) sputter.Yet due to the pin hole in LiPON film, this depositing operation may cause the productive rate loss (yield loss) showing very much, and along with the increase of applied radio-frequency power during sputter, pinhold density also can increase.The method that minimizes pin hole relates to the LiPON film that deposition is thicker---normally one to two micron thickness---and when described negative electrode has bad configuration of surface, the thickness of described LiPON may also need larger.Yet this is not still fully effective for removing pin hole, and due to the more expensive expense of lower output and spent material, this can increase the cost of described processing step.

Another kind minimizes the method for pin hole in dielectric film: between depositional stage, increase substrate temperature, to increase the surface mobility of atom.Yet this method is not suitable for the material such as LiPON, because TFB needs LiPON's " amorphous " phase, and the required temperature of surface mobility that increases in fact LiPON causes undesirable LiPON crystallization.This method is not equally suitable for permeation barrier (permeation barrier) layer yet, because the temperature that is high enough to dielectric surface mobility is increased affects polymer planarization layer negatively.

In addition,, for the membrane structure such as penetration barrier layer (dielectric layer of a plurality of repetitions and smooth fluidized polymer film), the pin hole in dielectric film may damage the function of described membrane structure.For example, the pin hole in described dielectric film may produce the hole of running through penetration barrier layer easily.

Far and away, exist the demand of depositing operation and the equipment of the dielectric film with lower pinhold density can be provided at low cost.

Summary of the invention

The present invention relates generally to the reduction of pinhold density and the configuration of surface of improvement dielectric material film.The present invention can be applicable to vacuum-deposited dielectric film, irrelevant with the concrete evaporating deposition technique using conventionally, and can be applied to the film of antivacuum deposition.As instantiation, this paper describes the method for the LiPON of the low pinhold density of sputtering sedimentation, LiPON is (such as electrochromics (electrochromic at thin film electrochemistry device; EC) device and TFB) middle dielectric, the electrolyte using.

According to certain embodiments of the present invention, a kind of method of deposit dielectric film can comprise the following steps: deposition of thin dielectric layer; Stop dielectric layer, and change the gas (if needs) in chamber; Near substrate, induce and maintain plasma, so that the Ions Bombardment of the dielectric layer to being deposited to be provided; And repeat described deposition, stop and inducing step, until deposited the dielectric of desired thickness.

According to other execution modes of the present invention, a kind of method of deposit dielectric film can comprise the following steps: the thin dielectric layer of deposition of high-quality; Stop dielectric layer, and change the gas (if needs) in chamber; Near substrate, induce and maintain plasma, so that the Ions Bombardment of the dielectric layer to being deposited to be provided; Deposit more inferior thick dielectric layer; The thin dielectric layer of deposition of high-quality; Stop dielectric layer, and change the gas (if needs) in chamber; And near substrate, induce and maintain plasma, so that the Ions Bombardment of the dielectric layer to being deposited to be provided.Described thick dielectric layer can deposit more quickly than described thin dielectric layer.

In addition, the invention describes the instrument of carrying out said method that is configured for.

Accompanying drawing explanation

After the following description of reading by reference to the accompanying drawings specific implementations of the present invention, these and other aspect of the present invention and feature are apparent by those those of ordinary skill that become in this area, in these accompanying drawings:

Fig. 1 is the profile of hull cell;

Fig. 2 is the schematic diagram of depositing system according to certain embodiments of the present invention;

Fig. 3 is according to certain embodiments of the present invention for depositing the flow chart of LiPON film;

Fig. 4 is that other execution modes according to the present invention are for depositing the flow chart of LiPON film;

Fig. 5 A, 5B and 5C remove the schematic diagram of pin hole according to certain embodiments of the present invention during the only plasma part of depositing operation;

Fig. 6 is the schematic diagram of thin film deposition cluster tool (cluster tool) according to certain embodiments of the present invention;

Fig. 7 is the representative graph according to certain embodiments of the present invention with the thin film deposition system of a plurality of series connection (in-line) instrument; And

Fig. 8 is the representative graph of series connection deposition tool according to certain embodiments of the present invention.

Embodiment

Now, with reference to graphic detailed description embodiments of the present invention, these execution modes are provided as illustrative example of the present invention, so that those skilled in the art can put into practice the present invention.The graphic representative graph that comprises device and device technique flow process provided in this article, these representative graphs not drawn on scale.It should be noted that following graphic and example is not intended to limit the scope of the present invention to single execution mode, but via exchanging some or all description or illustrated element, other execution modes are also possible.In addition, wherein some element of the present invention can be used known elements to implement partially or completely, to only describe and in this type of known elements, understand part essential to the invention, and by the detailed description of omitting other parts of this type of known elements, in order to avoid fuzzy the present invention.In this manual, the execution mode that single part is described should not be considered as restriction; More properly, the invention is intended to comprise other execution modes that comprise a plurality of same parts, and vice versa, unless otherwise clearly stated herein.In addition, the applicant does not intend any term in this specification or claimed scope to be attributed to rare or special implication, unless be illustrated as clearly in literary composition, is rare or special implication.In addition present invention resides in, the present and the future's of the described known elements of mentioning with way of example known equivalent herein.

The present invention can be applicable to reduce the pin hole in dielectric film conventionally.Although the instantiation of technique is provided for depositing LiPON film, technique of the present invention can be applicable to deposit other dielectric films, such as SiO ₂, Al ₂o ₃, ZrO ₂, Si ₃n ₄, SiON, TiO ₂deng.In addition, although the described Li that carries out in nitrogen environment ₃pO ₄the instantiation of the PVD RF sputter of target is to be provided for LiPON, but the concrete deposition process of described method of the present invention and dielectric thin layer is irrelevant---of the present inventionly for reducing the method for pin hole, conventionally can be applicable to vacuum deposition film, and can be applied to the film of antivacuum deposition, the film of wet method processing for example.

Fig. 2 illustrates the schematic diagram of the example of deposition tool 200, and described deposition tool 200 is configured for according to deposition process of the present invention.Described deposition tool 200 comprises vacuum chamber 201, sputtering target 202, substrate 204 and substrate pedestal 205.For LiPON deposition, described target 202 can be Li ₃pO ₄, and suitable substrate 204 can be silicon nitride on silicon, silicon, glass, PETG (polyethylene terephthalate; PET), mica, metal forming etc., wherein deposited and patterning current collector layer and cathode layer.See Fig. 1.Described chamber 201 has vacuum pump system 206 and process gas transfer system 207.A plurality of power supplys are connected to described target.Each target power supply has matching network, and described matching network is used for controlling radio frequency (RF) power supply.Use filter so that can use two power supplys in different frequency operation, wherein said filter plays a part can be not impaired due to the frequency compared with high at the target power supply of lower frequency operation in order to protection.Similarly, a plurality of power supplys are connected to described substrate.Each power supply that is connected to described substrate has matching network, and described matching network is used for controlling radio frequency (RF) power supply.Use filter so that can use two power supplys in different frequency operation, wherein said filter play a part in order to protection lower frequency operation, be connected to described substrate power supply can be not impaired due to the frequency compared with high.

According to plasma pin hole minimizing technology and the sedimentation type used, the one or more power supplys that are connected in the described power supply of substrate can be direct current (DC) source, pulsed D C (pulsed DC; PDC) source, RF source etc.Similarly, one or more in described target power supply can be DC source, pDC source, RF source etc.Described power supply (power source; PS) some examples of structure and use provide in following table 1.In addition, the principle of the integrated drive generator described in the U.S. Patent Application Publication case of being submitted to by the people such as Kwak No. 2009/0288943 (described Patent Application Publication case is all incorporated to herein with way of reference) and structure can be for the depositions of film according to certain embodiments of the present invention; For example, the power supply except RF power supply is combined in that the pinhold density aspect reducing in institute's deposited film is provided can be effective.In addition, can between depositional stage, heat described substrate.

Table 1

^*can use the frequency that is less than 1MHz.

Table 1 provides according to certain embodiments of the present invention the exemplary construction for the power supply of sputtering sedimentation and plasma pin hole fill process.Sputtering sedimentation #1 and #2 can be used for utilizing Li in nitrogen environment or argon environment (the latter needs nitrogen plasma treatment subsequently, and described nitrogen plasma treatment can be also the part of described pin hole fill process, so that essential nitrogen to be provided) ₃pO ₄target sputter-deposited materials (such as LiPON); Corresponding plasma pin hole fill process can be for reducing the pinhold density in the LiPON of these sputtering sedimentations film.

The first execution mode of the present invention reduces the density of formed pin hole according to deposition plasma induced surface modification after the general technology flow process utilization shown in Fig. 3 (post-deposition plasma induced surface modification).Described technological process can comprise: deposition of thin dielectric layer (310); Stop dielectric layer, and change the gas (if needs) (320) in chamber; On described substrate, induce and maintain plasma, so that the Ions Bombardment to institute's dielectric layer to be provided, for the configuration of surface of reconstruct dielectric layer and in some embodiments for composition modification (compositional modification) (such as being incorporated to nitrogen) (330); And repeating step (310) is to (330), until deposited the dielectric (340) of desired thickness.Here, thin dielectric layer refers to that thickness is the dielectric layer that several nanometers arrive hundreds of nanometer, more particularly refers to that thickness 2nm is to the dielectric layer of 200nm.

The example of technique shown in Fig. 3 is for LiPON veneer.The first, via carry out Li in nitrogen environment ₃pO ₄the PVD RF sputter of target carrys out deposition of thin LiPON layer.The second, close described RF target power supply, maintain N simultaneously ₂environment.The 3rd, utilize RF power source substrate that RF is applied directly to substrate, to produce local plasma---the ion of the enough high energy of this plasma generation at described substrate place, with the sufficient energy of LiPON layer that gives to have deposited, make it possible to allow surface flatten sliding and repair pin hole, below with reference to Fig. 5, more write up.The 4th, repeat as described above described technique, until reach desired thickness---this can be after the circulation of a deposition and plasma treatment, after two depositions and plasma treatment circulation, or even may need nearly ten times or repeat more frequently.Should note utilizing nitrogen plasma to carry out pin hole minimizing and can also improve via increasing the nitrogen content of LiPON the ionic conductivity of the LiPON having deposited.

As sputter Li in nitrogen environment ₃pO ₄to form substituting of LiPON film, can use argon environment, then carry out nitrogen plasma pin hole fill process.Have been found that using argon to carry out sputter has improved the effect that pin hole reduces.This may be because nitrogen can pollute Li ₃pO ₄target, can cause described target to produce particle, and these particles can produce pin hole in deposited film, and argon can not pollute described target and therefore produce the particle detachment reducing, thereby and reduces pin hole and form.In addition, via using argon environment sputter Li ₃pO ₄and use subsequently nitrogen plasma treatment to remove the formed film of pin hole and demonstrate than using nitrogen environment sputtering sedimentation but do not experience the ionic conductivity (ionic conductivity) that the film of nitrogen plasma pin hole Transformatin improves.The conductance improving may be because nitrogen during nitrogen plasma treatment is more effectively incorporated into the cause in described LiPON film.(to a certain extent, nitrogen content is higher---and be Li ₃pO _4-δn _xin x higher---described ionic conductivity is higher.) it should be noted that and can increase the efficiency of described nitrogen plasma process and the ionic conductivity of raising of removing for pin hole via controlling described substrate temperature.For LiPON deposition, although having improved nitrogen, high temperature is incorporated to, described temperature should be not too high, otherwise described film may crystallization---and control described substrate temperature and can be provided for the more high efficient technology of LiPON in the temperature range of room temperature to 300 ℃.In addition,, although estimate to use other gases (such as xenon) to replace argon to obtain similar result, compare the expensive use that may limit them of the gas such as xenon with argon.

The second execution mode of the present invention reduces the density of formed pin hole with the modification of rear deposition plasma induced surface according to the general technology flow process shown in Fig. 4.Described technological process can comprise: the thin dielectric layer of deposition of high-quality (410); Stop depositing described dielectric layer, and change the gas (if needs) (420) in described chamber; Induce and maintain near the plasma of described substrate, so that the Ions Bombardment of the dielectric layer to being deposited to be provided, for the configuration of surface of dielectric layer described in reconstruct and in some embodiments for composition modification (such as being incorporated to nitrogen) (430); Deposit more inferior thick dielectric layer (440); The thin dielectric layer of deposition of high-quality (450); Stop depositing described dielectric layer, and change the gas (if needs) (460) in described chamber; And induce and maintain near the plasma described substrate, so that the Ions Bombardment of the dielectric layer to being deposited to be provided, for the configuration of surface of dielectric layer described in reconstruct and in some embodiments for composition modification (such as being incorporated to nitrogen) (470).The whole dielectric layer of gained has composition relatively uniformly, makes the ionic conductivity of whole layer meet described matching requirements.For example, described thin layer and described thick-layer are all LiPON layers, and the LiPON that whole layer is had with the functional specified ionic conductivity of TFB forms.In step (440), thereby can than thin dielectric layer more quickly deposition of thick dielectric layer reduce the processing time, therefore described thick-layer is more inferior dielectric---common dielectric higher deposition rate can cause more pin hole and larger surface roughness, and this is undoubtedly the situation of LiPON.But still must deposition dielectric in the situation that material requested specification is provided---for example, the thick LiPON layer in TFB, it is stable with opposing dielectric breakdown (dielectric breakdown) can needing.Here supposing provides anti-short-circuit protection at the top of described dielectric stack and the thin layer of bottom, so that the pin hole in described thick-layer is harmless.Here, thick dielectric layer refers to that thickness is that hundreds of nanometer arrives some microns or larger dielectric layer, and more particularly refers to that thickness is 200nm to 2 micron or larger dielectric layer.Conventionally, by the puncture voltage of described device, required to determine the thickness of described thick dielectric layer.

Further, referring to the technique shown in Fig. 4, can use a kind of technique of skips steps 450.In the present embodiment, via plasma treatment, repair the pin hole in described thick film, the plasma treatment of described thick film may need than for the longer time of thinner high-quality dielectric layer, but actual plasma treatment time may may not be very long.For example, can optimize for filling pin hole, increase the nitrogen content of described film for the nitrogen plasma treatment time of LiPON thick film, or for both some combinations.

The technique that Fig. 5 A carries out pin hole repairing to Fig. 5 C diagram via plasma treatment.In Fig. 5 A, substrate 510 is covered by metal level 520 and dielectric layer 530.Described dielectric layer 530 comprises pin hole 540.The stacking ion 550 being exposed to from plasma shown in Fig. 5 B pictorial image 5A.Described ion can result from the surperficial plasma that is confined to described substrate, wherein enough direct current (DC) biases are applied to described substrate pedestal, to use enough energy that cation is attracted to the dielectric surface on described substrate, thereby (1) increase the surface mobility of adatom, and/or (2) sputtering surface atom, described surface atom is redeposited on the surface of described dielectric layer.(1) and/or (2) together with the effect of the suitable selection of substrate bias power and temperature, be the obstruction of surface modification and pin hole, as shown in Figure 5 C.

Following table 2 diagram according to certain embodiments of the present invention, some sampling plasma recipes (recipe) of carrying out in AMAT200mm Endura standard physical vapour deposition (PVD) chamber, fill for LiPON deposition and plasma pin hole.

Table 2

power upper limit is the restriction due to used power supply, and does not represent by the target area of target material and the upper limit of the determined described technique of power density limiting value.Estimating that described power can increase reaches the point that target breaks while starting.

Table 2 is provided for sputter Li ₃pO ₄to form film, then to carry out the removal of plasma pin hole to give the example of the process conditions of the low pinhold density of LiPON film.Technique A is the example that carries out sputtering sedimentation in nitrogen, argon environment, then carry out the filling of nitrogen plasma pin hole.Technique B is the example that carries out sputtering sedimentation in nitrogen environment, then carry out the filling of nitrogen plasma pin hole.Technique C is the example that carries out sputtering sedimentation in argon environment, then carry out the filling of nitrogen plasma pin hole.Technique D is the example that carries out sputtering sedimentation in nitrogen, argon environment, then carry out nitrogen, the filling of argon plasma pin hole.These are some examples of the process conditions of operable many changes.Should notice that described technique sets according to larger area instrument scale.For example, the series connection instrument that has a 1400mm x190mm rectangle LiPON target operates under 10kW.Large series connection target can operate with having by the target area of described target material and the radio-frequency power of the determined upper limit of power density limiting value.

In addition, described process conditions can change to different from those process conditions as above.For example,, for such as LiCoO ₂and so on other materials, depositing temperature may be higher, power supply can be pDC, and plasma processing gas can be oxygen or Ar/O _x/ N ₂mixture.After reading disclosure case, it will be apparent to those skilled in the art that and can carry out the adjustment to these parameters, the uniformity of deposited film, surface roughness, layer density etc. (if needs) to improve.

Although Fig. 2 diagram has the chamber configuration of target and the substrate of horizontal flat, if described target and substrate can remain in perpendicular---described target itself produces particle, and this configuration can help to alleviate particle issues.In addition, the position of described target and described substrate can be switched, so that described substrate remains on the top of described target.Further, described substrate can be flexible and move before described target via reel-to-reel (reel to reel) system, described target can be the cylindrical target of rotation, and described target can be nonplanar, and/or described substrate can be nonplanar.

In addition, above-mentioned technique is described in single deposition chambers, carry out completely.Yet the deposition of described thin dielectric layer can complete in the first chamber, and described plasma treatment can complete in another chamber.

Fig. 6 is according to certain embodiments of the present invention for the manufacture of the schematic diagram of the treatment system 600 of TFB device.Treatment system 600 comprises SMIF (standard mechanical interface; SMIF), described SMIF is connected to and is equipped with clean (the reactive plasma clean of reactive plasma; RPC) cluster tool of chamber and processing chamber C1-C4, described cluster tool can be used in processing step as above.If need, also glove box (glovebox) can be attached to described cluster tool.Described glove box can be stored in substrate (for example, under the inert gas such as He, Ne or Ar) in inert environments, and this is useful after alkali metal/alkaline-earth metal deposition.If needing to use front chamber (ante the chamber)-described front chamber that is connected to glove box is that (inert gas is exchanged for air to gas heat exchanger chambers, vice versa), described front chamber allows substrate transmission to pass in and out described glove box, can not pollute the inert environments in described glove box simultaneously.(should note using the dry indoor environment with enough low dew point to substitute that glove box ，Ru Li paper tinsel manufacturer uses.) cavity C 1-C4 can be configured for the processing step of manufacturing hull cell device, described processing step can comprise: dielectric layer is (for example,, at N as described above ₂in via radio frequency sputtering Li ₃pO ₄target deposits LiPON) and carry out the filling of plasma pin hole.Although will be appreciated that cluster structure has illustrated for the treatment of system 600, but also can use linear system, in described linear system, each treatment chamber is lined up team setting, and transmission chamber is not set, so substrate moves to next chamber from a chamber continuously.

Fig. 7 diagram according to certain embodiments of the present invention, has the representative graph of the series system manufacturing system 700 of a plurality of series connection instruments 710,720,730,740 etc.Series connection instrument can comprise for depositing electrochemical appliance---comprise the instrument of all layers of TFB and electrochromic device.In addition, described series connection instrument can comprise preconditioning chamber and rear adjusting chamber.For example, instrument 710 can be emptying (pump down) chamber, for move through vacuum air lock (airlock) 715 at substrate, sets up vacuum state before entering deposition tool 720.The vacuum tool that some or all of series connection instruments can be separated by vacuum air lock 715.Should notice that the order of special process instrument and process tool in technique circuit determines the certain electric color-changing device manufacture method by used.For example, one or more series connection instrument can, for depositing according to certain embodiments of the present invention LiPON dielectric layer, use plasma pin hole to reduce technique, as mentioned above in these execution modes.In addition, substrate can move through the series system manufacturing system of level or vertical orientation.Further, described series system goes for the reel-to-reel processing of coiled material substrate (web substrate).

In order to illustrate that substrate passes the motion of example series system manufacturing system as shown in Figure 7, in Fig. 8, diagram only has the substrate conveyer belt (substrate conveyer) 750 of a mounted series connection instrument 710.Described in the substrate holder that contains substrate 810 (substrate holder) 755(, substrate holder is illustrated as partly and cuts, to can see described substrate) be installed on described conveyer belt 750 or equality unit, with mobile described retainer and substrate, pass described series connection instrument 710, as illustrated.For thering is the suitable series connection platform of the handling implement 710 of vertical substrate configuration, be the New Aristo of Applied Materials (Applied Materials) ^tM.For thering is the suitable series connection platform of the process tool 710 of horizontal base plate configuration, be the Aton of Applied Materials (Applied Materials) ^tM.In addition, tandem process can be in reel-to-reel system (such as the SmartWeb of Applied Materials (Applied Materials) ^tM) upper enforcement.

The first equipment that is used for deposit dielectric film according to the embodiments of the present invention can comprise the first system, and described the first system is used for: deposition of thin dielectric layer; Stop dielectric layer, and change the gas (if needs) in chamber; Near substrate, induce and maintain plasma, so that the Ions Bombardment of the dielectric layer to being deposited to be provided; And repeat described deposition, stop and inducing step, until deposited the dielectric of desired thickness.Yet, described deposition, stop and inducing the repetition of step in second system, the 3rd system etc., to carry out, depend on number of repetition and output that described the first equipment is required.Described the first equipment can be cluster tool or series connection instrument.In this external series connection or reel-to-reel equipment, described deposition and induction step can be carried out in that separate, adjacent system, and can further in series add on demand for depositing and induce the paired system of step, to repeat described deposition and induction step.

The second equipment according to the embodiments of the present invention for deposit dielectric film can comprise: the first system, described the first system is used for: the thin dielectric layer of deposition of high-quality, stop dielectric layer, and the gas in change chamber (if needs), and near substrate, induce and maintain plasma so that the Ions Bombardment of the dielectric layer to being deposited to be provided; Second system, described second system is for the more inferior thick dielectric layer of deposition; And the 3rd system, described the 3rd system is used for: the thin dielectric layer of deposition of high-quality, stop dielectric layer, and change the gas (if needs) in chamber, and near substrate, induce and maintain plasma so that the Ions Bombardment of the dielectric layer to being deposited to be provided.Yet, described first, second and the 3rd system, described the first and second systems, or the described second and the 3rd system can be an independent system.Described the second equipment can be cluster tool, or series connection instrument, or reel-to-reel instrument.In addition,, when described the second equipment is cluster tool, the described first and the 3rd system can be an independent system.

Although the example providing above-mentioned focuses on TFB and electrochromic device, and principle of the present invention and method can be applicable to the structure such as penetration barrier layer equally.Penetration barrier layer consists of the dielectric layer (or other vacuum-deposited metal/semiconductors) of a plurality of repetitions and the polymer film of planarization conventionally.Therefore it is permeable that planarization layer remains, and described dielectric layer is born the function of complete penetration barrier layer.Therefore the technique of the present invention that, minimizes pin hole in dielectric is equally also useful for this class formation.

Although described particularly the present invention with reference to some embodiments of the present invention, but should it is evident that for those of ordinary skills: without departing from the spirit and scope of the present invention, can carry out the variation of form and details and modification.

Claims

1. a method for deposit dielectric film, comprises:

On substrate, deposit the first dielectric materials layer;

After described the first dielectric materials layer of deposition, induce and maintain the plasma on described substrate, so that the Ions Bombardment to described the first dielectric materials layer to be provided; And

Repeat described deposition and induction and maintain step, until deposited the dielectric material of predetermined thickness.

2. the method for claim 1, wherein said dielectric material is LiPON.

3. method as claimed in claim 2, the thickness of wherein said the first dielectric materials layer is less than 200nm.

4. the method for claim 1, wherein said deposition is the vacuum moulding machine in processing chamber.

5. method as claimed in claim 4, described method further comprises: in described induction with before maintaining step, change the described process gas in described processing chamber.

6. method as claimed in claim 4, wherein said vacuum deposition steps comprises: sputter Li in argon environment ₃pO ₄.

7. method as claimed in claim 6, described method further comprises: before described induction step, nitrogen is introduced to described processing chamber.

8. method as claimed in claim 6, the thickness of wherein said the first dielectric materials layer is less than 200nm.

9. method as claimed in claim 4, wherein said vacuum deposition steps comprises: dielectric material described in sputter, described sputter step comprises the radio-frequency power of the radio-frequency power of first frequency and second frequency is applied to a sputtering target simultaneously.

10. method as claimed in claim 9, wherein said vacuum deposition steps comprises: applied bias voltage is to described substrate.

11. methods as claimed in claim 4, wherein said vacuum deposition steps comprises: sputter Li in nitrogen and argon environment ₃pO ₄.

12. the method for claim 1, wherein heat described substrate in described induction with during maintaining step.

The method of 13. 1 kinds of deposit dielectric films, described method comprises:

In processing chamber by the first dielectric materials layer vacuum moulding machine on substrate;

After the first dielectric materials layer described in vacuum moulding machine, induce and maintain the plasma on described substrate, so that the Ions Bombardment to described the first dielectric materials layer to be provided; With

By the second dielectric materials layer vacuum moulding machine to described the first dielectric materials layer through Ions Bombardment;

After the second dielectric materials layer described in vacuum moulding machine, induce and maintain the plasma on described substrate, so that the Ions Bombardment to described the second dielectric materials layer to be provided;

Wherein said the second dielectric materials layer is thicker than described the first dielectric materials layer.

14. methods as claimed in claim 13, wherein deposit described the second dielectric materials layer more quickly than described the first dielectric materials layer.

15. methods as claimed in claim 13, are wherein used the first dielectric materials layer and described the second dielectric materials layer described in same sputtering target vacuum moulding machine.

16. methods as claimed in claim 13, wherein said dielectric material is LiPON.

The method of 17. 1 kinds of deposit dielectric films, described method comprises:

In described processing chamber by the 3rd dielectric materials layer vacuum moulding machine to described the second dielectric materials layer;

After the 3rd dielectric materials layer described in vacuum moulding machine, induce and maintain the plasma on described substrate, so that the Ions Bombardment to described the 3rd dielectric materials layer to be provided;

Wherein said the second dielectric materials layer is thicker than described the first dielectric materials layer and described the 3rd dielectric materials layer.

18. methods as claimed in claim 17, are wherein used the first dielectric materials layer described in same sputtering target vacuum moulding machine, described the second dielectric materials layer and described the 3rd dielectric materials layer.

19. methods as claimed in claim 17, wherein said dielectric material is LiPON.

20. methods as claimed in claim 17, wherein deposit described the second dielectric materials layer more quickly than described the first dielectric materials layer and described the 3rd dielectric materials layer.