CN103594596B - A kind of preparation method of laminate electrode - Google Patents
A kind of preparation method of laminate electrode Download PDFInfo
- Publication number
- CN103594596B CN103594596B CN201310499937.3A CN201310499937A CN103594596B CN 103594596 B CN103594596 B CN 103594596B CN 201310499937 A CN201310499937 A CN 201310499937A CN 103594596 B CN103594596 B CN 103594596B
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- layer
- evaporation
- reflector
- coalescent
- sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses the preparation method of the laminate electrode on a kind of luminescent device, in turn include the following steps: (1) is in the surperficial evaporation reflector of semiconductor light emitting unit; (2) on evaporation barrier layer, surface, reflector; (3) coalescent inhibition layer is formed in barrier layer surface sputtering; (4) sputtering oxidation screen in coalescent inhibition layer.
Description
Technical field
The invention belongs to technical field of semiconductor luminescence, particularly relate to the preparation method of the laminate electrode on a kind of luminescent device.
Background technology
Conventional semiconductor luminescent device (such as LED) comprises order and forms contact electrode on semiconductor layer luminescence unit on a sapphire substrate and semiconductor light emitting unit.Generally speaking, contact electrode generally adopts single-layer metal material, forms ohmic contact by single-layer metal material and semiconductor contact, thus forms the electrode of luminescent device.But the ohm contact performance of the contact electrode that this single-layer metal material is formed is also not fully up to expectations.Because the surface energy of semiconductor is usually significantly different each other with the surface energy for the formation of the metal material (as Ag) of contact electrode.Due to the difference of surface energy, coalescent effect can be there is between contact electrode and semiconductor at During Annealing, thus the interface between semiconductor and contact electrode defines multiple cavity, the existence in this cavity reduces the reflectivity of contact electrode, and the light output performance of light emitting semiconductor device is reduced.
Summary of the invention
In order to overcome the defect existed in prior art, the invention provides the preparation method of the laminate electrode on a kind of luminescent device, laminate electrode structure is formed by adopting different materials to carry out stacking, and this laminate electrode structure is used as the contact electrode of light emitting semiconductor device, not only can suppress coalescent effect, avoid the generation in cavity, and the performance of ohmic contact can be strengthened further.
The preparation method of the laminate electrode that the present invention proposes, in turn includes the following steps:
(1) in the surperficial evaporation reflector of semiconductor light emitting unit;
(2) on evaporation barrier layer, surface, reflector;
(3) coalescent inhibition layer is formed in barrier layer surface sputtering;
(4) sputtering oxidation screen in coalescent inhibition layer.
Wherein, in step (1), 1 × 10 is less than in vacuum degree
-6reflector described in evaporation under the condition of holder.First semiconductor light emitting unit is inserted in deposited chamber, be evacuated to vacuum degree and be less than 1 × 10
-6during holder, start evaporation process, successively evaporation TiO
2layer, Ti
3o
5layer and Ta
2o
5layer; After evaporation terminates, obtain the reflector of three-decker;
In step (2), after layer evaporation to be reflected terminates, the semiconductor light emitting unit taking out evaporation reflector is inserted in another deposited chamber, is evacuated to vacuum degree and is less than 1 × 10
-6during holder, start the evaporation process on barrier layer, by the surface of at least one evaporation in transparent material TiN, RuO, InO, MoO and IrO of conduction in reflector;
In step (3), the semiconductor unit on complete for evaporation barrier layer is inserted in sputtering chamber, sputtering technology is adopted metallic aluminium (Al) to be sputtered at the surface on barrier layer, after certain thickness metallic aluminum to be formed, splash-proofing sputtering metal aluminium and another kind of metal while of again on the surface of metallic aluminum, described another kind of metal is Ag, Cu, Pd, Rh, Ni, Ru, or Pt, thus on metallic aluminum, form the mixed layer of metallic aluminium and another kind of metal, then semiconductor light emitting unit is inserted in heating chamber and heat, heating and temperature control is at 300-400 degree Celsius, control heating time at 1-2 hour, after heating terminates, metallic aluminium and another kind of metal will form acieral layer, aluminium lamination and acieral layer form coalescent inhibition layer jointly,
In step (4), the acieral layer surface sputtering oxidation screen in coalescent inhibition layer; Oxidation screen be selected from Au, Ni, Pd, Cu, Rh, Ru or Pt one or both; Oxidation screen is used for preventing coalescent inhibition layer surface oxidized, and can also be used as the sealer of laminate electrode.
The beneficial effect of preparation method of the present invention is:
1. adopt reflector, the light inciding electrode surface is reflected back, improve the light output characteristic of luminescent device;
2. adopt barrier layer and coalescent inhibition layer, can avoid, in laminate electrode, coalescent effect occurs, avoid the generation in cavity;
3. adopt oxidation screen, except can avoid coalescent inhibition layer surface oxidized except, can also the protective layer on laminate electrode surface be used as.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of the laminate electrode that preparation method that the present invention proposes obtains.
Embodiment
See Fig. 1, the preparation method of the laminate electrode that the present invention proposes, in turn includes the following steps:
(1) in the surperficial evaporation reflector 2 of semiconductor light emitting unit 1;
(2) the surperficial evaporation barrier layer 3 in reflector 2;
(3) coalescent inhibition layer 4 is formed at barrier layer 3 surface sputtering;
(4) sputtering oxidation screen 5 in coalescent inhibition layer 4.
Wherein, in step (1), 1 × 10 is less than in vacuum degree
-6reflector 2 described in evaporation under the condition of holder.First semiconductor light emitting unit is inserted in deposited chamber, be evacuated to vacuum degree and be less than 1 × 10
-6during holder, start evaporation process, successively evaporation TiO
2layer 21, Ti
3o
5layer 22 and Ta
2o
5layer 23; After evaporation terminates, obtain the reflector 2 of three-decker; Wherein, TiO
2layer 21, Ti
3o
5layer 2 and Ta
2o
5the thickness of layer 3 is identical;
In step (2), after layer 2 evaporation to be reflected terminates, the semiconductor light emitting unit 1 taking out evaporation reflector 2 is inserted in another deposited chamber, is evacuated to vacuum degree and is less than 1 × 10
-6during holder, start the evaporation process on barrier layer 3, by least one evaporation in transparent material TiN, RuO, InO, MoO and IrO of conduction on the surface in reflector 2, thus obtain barrier layer 3; Barrier layer 3, for the coalescent effect on blocking reflected layer 2 surface, prevents the generation in cavity;
In step (3), the semiconductor unit 1 on complete for evaporation barrier layer 3 is inserted in sputtering chamber, sputtering technology is adopted metallic aluminium (Al) to be sputtered at the surface on barrier layer 3, after certain thickness metallic aluminum 41 to be formed, splash-proofing sputtering metal aluminium and another kind of metal while of again on the surface of metallic aluminum 41, described another kind of metal is Ag, Cu, Pd, Rh, Ni, Ru, or Pt, thus on metallic aluminum, form the mixed layer of metallic aluminium and another kind of metal, then semiconductor light emitting unit 1 is inserted in heating chamber and heat, heating and temperature control is at 300-400 degree Celsius, control heating time at 1-2 hour, after heating terminates, metallic aluminium and another kind of metal will form acieral layer 42, aluminium lamination 41 and acieral layer 42 form coalescent inhibition layer 4 jointly, coalescent inhibition layer 4 produces cavity for suppressing, in contact electrode, coalescent effect occurs at During Annealing, the thickness of aluminium lamination 41 is less than the thickness of acieral layer 42, and in the present invention, the thickness of aluminium lamination 41 is 1/2 of the thickness of acieral layer 42,
In step (4), the acieral layer 42 surface sputtering oxidation screen 5 in coalescent inhibition layer 4; Oxidation screen 5 be selected from Au, Ni, Pd, Cu, Rh, Ru or Pt one or both; Oxidation screen 5 for preventing coalescent inhibition layer surface oxidized, and can also be used as the sealer of laminate electrode.Oxidation screen 5 can be single layer structure, and being now oxidized screen 5 can be formed by the one in Au, Ni, Pd, Cu, Rh, Ru or Pt; Oxidation screen 5 also can be double-decker, and now, oxidation screen 5 can be formed by two in Au, Ni, Pd, Cu, Rh, Ru or Pt kind.
So far to invention has been detailed description, but the embodiment of description above only just the preferred embodiments of the present invention, it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.
Claims (2)
1. a preparation method for laminate electrode, in turn includes the following steps:
(1) in the surperficial evaporation reflector of semiconductor light emitting unit;
(2) on evaporation barrier layer, surface, reflector;
(3) coalescent inhibition layer is formed in barrier layer surface sputtering;
(4) sputtering oxidation screen in coalescent inhibition layer;
Wherein, in step (1), 1 × 10 is less than in vacuum degree
-6reflector described in evaporation under the condition of holder; First semiconductor light emitting unit is inserted in deposited chamber, be evacuated to vacuum degree and be less than 1 × 10
-6during holder, start evaporation process, successively evaporation TiO
2layer, Ti
3o
5layer and Ta
2o
5layer; After evaporation terminates, obtain the reflector of three-decker;
In step (2), after layer evaporation to be reflected terminates, the semiconductor light emitting unit taking out evaporation reflector is inserted in another deposited chamber, is evacuated to vacuum degree and is less than 1 × 10
-6during holder, start the evaporation process on barrier layer, by the surface of at least one evaporation in transparent material TiN, RuO, InO, MoO and IrO of conduction in reflector;
In step (3), the semiconductor unit on complete for evaporation barrier layer is inserted in sputtering chamber, sputtering technology is adopted metallic aluminium (Al) to be sputtered at the surface on barrier layer, after certain thickness metallic aluminum to be formed, splash-proofing sputtering metal aluminium and another kind of metal while of again on the surface of metallic aluminum, described another kind of metal is Ag, Cu, Pd, Rh, Ni, Ru, or Pt, thus on metallic aluminum, form the mixed layer of metallic aluminium and another kind of metal, then semiconductor light emitting unit is inserted in heating chamber and heat, heating and temperature control is at 300-400 degree Celsius, control heating time at 1-2 hour, after heating terminates, metallic aluminium and another kind of metal will form acieral layer, aluminium lamination and acieral layer form coalescent inhibition layer jointly,
In step (4), the acieral layer surface sputtering oxidation screen in coalescent inhibition layer; Oxidation screen be selected from Au, Ni, Pd, Cu, Rh, Ru or Pt one or both; Oxidation screen is used for preventing coalescent inhibition layer surface oxidized, and can also be used as the sealer of laminate electrode.
2. the method for claim 1, is characterized in that:
TiO
2layer 21, Ti
3o
5layer 2 and Ta
2o
5the thickness of layer 3 is identical;
The thickness of aluminium lamination is less than the thickness of acieral layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310499937.3A CN103594596B (en) | 2013-10-22 | 2013-10-22 | A kind of preparation method of laminate electrode |
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|---|---|---|---|
| CN201310499937.3A CN103594596B (en) | 2013-10-22 | 2013-10-22 | A kind of preparation method of laminate electrode |
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| CN103594596A CN103594596A (en) | 2014-02-19 |
| CN103594596B true CN103594596B (en) | 2016-03-02 |
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| CN103208573A (en) * | 2012-01-13 | 2013-07-17 | 夏普株式会社 | Semiconductor Light-emitting Device And Method Of Forming Electrode |
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| JP5162909B2 (en) * | 2006-04-03 | 2013-03-13 | 豊田合成株式会社 | Semiconductor light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103208573A (en) * | 2012-01-13 | 2013-07-17 | 夏普株式会社 | Semiconductor Light-emitting Device And Method Of Forming Electrode |
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Effective date of registration: 20170726 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |